CN109200748A - A kind of high sensitivity toxic gas sensor and preparation method thereof - Google Patents

A kind of high sensitivity toxic gas sensor and preparation method thereof Download PDF

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Publication number
CN109200748A
CN109200748A CN201811062453.1A CN201811062453A CN109200748A CN 109200748 A CN109200748 A CN 109200748A CN 201811062453 A CN201811062453 A CN 201811062453A CN 109200748 A CN109200748 A CN 109200748A
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toxic gas
gas sensor
metal
transition metal
highly sensitive
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CN109200748B (en
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杨国锋
汪金
楚广勇
薛俊俊
昌建军
王昱
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Nanjing Norrison Electronics Technology Co Ltd
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Nanjing Norrison Electronics Technology Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • B01D53/0407—Constructional details of adsorbing systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • B01D53/0407—Constructional details of adsorbing systems
    • B01D53/0446—Means for feeding or distributing gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/10—Inorganic adsorbents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/10—Inorganic adsorbents
    • B01D2253/104—Alumina
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/10—Inorganic adsorbents
    • B01D2253/112—Metals or metal compounds not provided for in B01D2253/104 or B01D2253/106
    • B01D2253/1128—Metal sulfides

Abstract

The invention discloses a kind of highly sensitive toxic gas sensors and preparation method thereof, belong to physical detection technical field.The edge adsorption effect that two-dimensional material is utilized in sensor of the invention is substantially better than this characteristic of surface, two-dimentional Transition Metal Sulfur/selenide layers is designed as multilayer homeotropic texture, so that its minimum detection limit is up to 0.01ppm；Preparation method of the invention has captured the technological difficulties of two-dimentional Transition Metal Sulfur/selenides of preparation multilayer homeotropic texture, and new thinking is provided for poisonous gas detection field.

Description

A kind of high sensitivity toxic gas sensor and preparation method thereof
Technical field
The present invention relates to a kind of highly sensitive toxic gas sensors and preparation method thereof, belong to physical detection technology neck Domain.
Background technique
The toxic gases such as nitric oxide, nitrogen dioxide, ammonia are one of the main reason for forming acid rain, all to human and environment Cause serious harm.When the content of nitrogen dioxide in air is more than 53ppb, children cause serious respiratory disease Probability will greatly increase.Therefore, quickly and accurately detect these pernicious gases to people's health life, industrial production with And the fields such as agricultural supervision are all vital.
Now, it for toxic gases such as nitric oxide, nitrogen dioxide, has developed using the toxic of two-dimensional material preparation Gas sensor can act on the spy for being adsorbed on the surface of two-dimensional material using gas molecule by physical absorption (Van der Waals force) Property and portion gas molecule can regulate and control the characteristic of two-dimensional material electric property, and the method for conjunction measuring electric current is specific to realize The detection of gas molecule.Such toxic gas sensor using two-dimensional material preparation can be at room temperature directly to having Evil gas is detected, and is had many advantages, such as easy to operate, easily portable.
But it is existing using two-dimensional material preparation toxic gas sensor generallys use is horizontally arranged structure Two-dimensional material, since horizontal structure two-dimensional material surface does not have dangling bonds, dangling bonds exist only in the fringe region of two-dimensional material, Gas molecule, which interacts therewith, relies primarily on Van der Waals force, and the function and effect of Van der Waals force are weaker, so that it is sensitive in detection Degree, detection limit etc. will be lower than the gas sensor of vertical structure.
Currently, the two-dimensional material that toxic gas sensor is often used, such as: two-dimentional Transition Metal Sulfur/selenides, by Confirmation can effectively detect nitric oxide, nitrogen dioxide and ammonia gas, we can be according to two-dimentional Transition Metal Sulfur/selenizing This characteristic of object optimizes the sensitivity, accuracy and minimum detection limit of toxic gas sensor.
However, containing homeotropic texture since the prior art is difficult to prepare the two-dimensional material layer of homeotropic texture The preparation of toxic gas sensor of two-dimensional material layer still need to further study, finally whether can reach optimization toxic gas The effect of transducer sensitivity, accuracy and minimum detection limit also still needs to further verify.
Summary of the invention
To solve the above problems, the present invention provides a kind of highly sensitive toxic gas sensors and preparation method thereof.This The edge adsorption effect that two-dimensional material is utilized in the sensor of invention is substantially better than this characteristic of surface, by two-dimentional transition metal Sulphur/selenide layers are designed as multilayer homeotropic texture, so that its sensitivity and minimum detection limit are superior to current level The gas sensor that the same material of structure is prepared；Preparation method of the invention has captured preparation multilayer homeotropic texture Two-dimentional Transition Metal Sulfur/selenides technological difficulties, new thinking is provided for poisonous gas detection field.
Technical scheme is as follows:
The present invention provides a kind of highly sensitive toxic gas sensors, and it includes semiconductor substrate (1), metals-partly to lead Body barrier layer (2), two-dimentional Transition Metal Sulfur/selenide layers (3), metal electrode (4) and metal passivation layer (5)；
The toxic gas includes nitric oxide, nitrogen dioxide and ammonia；
It is described two dimension Transition Metal Sulfur/selenide layers (3) by multilayer homeotropic texture two-dimentional Transition Metal Sulfur/selenizing Object is constituted；
Semiconductor substrate (1), metal-semiconductor barrier layer (2), two-dimentional transition metal in the toxic gas sensor Sulphur/selenide layers (3), metal electrode (4) and metal passivation layer (5) are arranged successively laying according to sequence from bottom to up.
In one embodiment of the invention, the material of the semiconductor substrate (1) is sapphire, silicon, gallium nitride, arsenic Change gallium, aluminium nitride or spinelle.
In one embodiment of the invention, the material of the semiconductor substrate (1) is silicon.
In one embodiment of the invention, the semiconductor substrate (1) with a thickness of 200-500nm.
In one embodiment of the invention, the material of the metal-semiconductor barrier layer (2) is SiO2。
In one embodiment of the invention, the metal-semiconductor barrier layer (2) with a thickness of 200-500nm.
In one embodiment of the invention, the two-dimentional Transition Metal Sulfur/selenide layers (3) are arranged vertically by multilayer The molybdenum disulfide of structure is constituted.
In one embodiment of the invention, the two-dimentional Transition Metal Sulfur/selenide layers (3) with a thickness of 8- 15nm。
In one embodiment of the invention, the material of the metal electrode (4) is golden (Au).
In one embodiment of the invention, metal electrode (4) interdigital electrode or circle electrode.
In one embodiment of the invention, the metal electrode (4) with a thickness of 300nm.
In one embodiment of the invention, the material of the metal passivation layer (5) is SiO2。
In one embodiment of the invention, the metal passivation layer (5) with a thickness of 100nm.
Local invention provides the preparation method of above-mentioned highly sensitive toxic gas sensor, and it includes following steps:
Step 1: preparation semiconductor substrate (1), and partly led in the certain thickness metal-of semiconductor substrate (1) disposed thereon Body barrier layer (2)；
Step 2: one layer of metal of electron beam evaporation above the metal-semiconductor barrier layer (2) of step 1, and to this layer of gold Belong to and carry out sulphur/selenization, obtains two-dimentional Transition Metal Sulfur/selenide layers (3) of multilayer homeotropic texture；
Step 3: the spin coating photoresist (6) above two-dimentional Transition Metal Sulfur/selenide layers (3) of step 2, and to photoresist (6) it carries out photoetching and obtains template, then two-dimentional Transition Metal Sulfur/selenide layers (3) are performed etching by template, obtaining has one Two-dimentional Transition Metal Sulfur/selenide layers (3) of setting shape；
Step 4: removing the residual photoresist (6) of step 3, having effigurate two-dimentional Transition Metal Sulfur/selenides Layer (3) disposed thereon metal electrode (4)；
Step 5: in the certain thickness metal passivation layer of metal electrode (4) disposed thereon (5) of step 4, obtaining has height Sensitivity toxic gas sensor.
In one embodiment of the invention, the step 2 need to control the two-dimentional mistake for obtaining multilayer homeotropic texture Crossing metal sulphur/selenide layers (3) reaction zone temperature is 770 DEG C, and the heating temperature to sulphur powder is 220 DEG C.
The present invention provides a kind of toxic gas detection devices, which is characterized in that the poisonous gas detection device includes Above-mentioned high sensitivity toxic gas sensor.
The present invention provides above-mentioned highly sensitive toxic gas sensor or above-mentioned highly sensitive toxic gas sensors Application of the toxic gas sensor or above-mentioned poisonous gas detection device that preparation method is prepared in terms of gas detection.
The utility model has the advantages that
(1) the edge adsorption effect that two-dimensional material is utilized in sensor of the invention is substantially better than this characteristic of surface, will Two-dimentional Transition Metal Sulfur/selenide layers are designed as multilayer homeotropic texture, so that its sensitivity and minimum detection limit are excellent In the gas sensor that the same material of current horizontal structure is prepared；
(2) minimum detection limit of inventive sensor is up to 0.01ppm；
(3) preparation method provided by the invention is captured by sulphur/selenization technological means, and it is vertical to obtain multilayer The technological difficulties of two-dimentional Transition Metal Sulfur/selenides of arrangement architecture, new thinking is provided for poisonous gas detection field；
(4) toxic gas sensor provided by the invention have it is easy to operate, easily it is portable etc. a little, meanwhile, can be Directly pernicious gas is detected under room temperature.
Detailed description of the invention
Fig. 1 is the front view of toxic gas sensor of the present invention；
Fig. 2 is the top view of toxic gas sensor of the present invention；
Fig. 3 is toxic gas sensor vertical structure MoS of the present invention2Electron microscope；
Fig. 4 is conventional toxic gas sensor horizontal structure MoS2Electron microscope；
Wherein, 1 semiconductor substrate, 2 metal-semiconductor barrier layers, 3 two-dimentional Transition Metal Sulfur/selenide layers, 4 metals electricity Pole and 5 metal passivation layers.
Specific embodiment
Below by taking three kinds of nitric oxide, nitrogen dioxide, ammonia toxic gases as an example, in conjunction with attached drawing and embodiment to the present invention It is further elaborated.
Such as Fig. 1-2, highly sensitive toxic gas sensor of the invention includes semiconductor substrate 1, metal-semiconductor blocking Layer 2, two-dimentional Transition Metal Sulfur/selenide layers 3, metal electrode 4 and metal passivation layer 5；
The toxic gas includes nitric oxide, nitrogen dioxide and ammonia；
It is described two dimension Transition Metal Sulfur/selenide layers 3 by multilayer homeotropic texture two-dimentional Transition Metal Sulfur/selenides It constitutes；
Semiconductor substrate 1, metal-semiconductor barrier layer 2 in the toxic gas sensor, two-dimentional Transition Metal Sulfur/ Selenide layers 3, metal electrode 4 and metal passivation layer 5 are arranged successively laying according to sequence from bottom to up.
Preferably, the material of the semiconductor substrate 1 is that sapphire, silicon, gallium nitride, GaAs, aluminium nitride or point are brilliant Stone.
Preferably, the material of the semiconductor substrate 1 is silicon.
Preferably, the semiconductor substrate 1 with a thickness of 200-500nm.
Preferably, the material on the metal-semiconductor barrier layer 2 is SiO2。
Preferably, the metal-semiconductor barrier layer 2 with a thickness of 200-500nm.
Preferably, molybdenum disulfide structure of the two dimension Transition Metal Sulfur/selenide layers 3 by multilayer homeotropic texture At.
Preferably, it is described two dimension Transition Metal Sulfur/selenide layers 3 with a thickness of 8-15nm.
Preferably, the material of the metal electrode 4 is golden (Au).
Preferably, 4 interdigital electrode of metal electrode or circle electrode.
Preferably, the metal electrode 4 with a thickness of 300nm.
Preferably, the material of the metal passivation layer 5 is SiO2。
Preferably, the metal passivation layer 5 with a thickness of 100nm.
Detection method involved in following embodiments is as follows:
Minimum detection limit detection method: probe is put up at toxic gas sensor electrode both ends of the invention, and is set In closed container, the gas concentration in closed container is controlled by flowmeter, the oxidation for being first then 0.10ppm by concentration Nitrogen, nitrogen dioxide, ammonia are passed through closed container, and time of the gas in closed container is kept for 10 minutes, apply at probe both ends Voltage detects the electric current of gas sensor through the invention；If can detect, be respectively 0ppm, 0.01ppm by concentration, The nitric oxide of 0.02ppm, 0.03ppm, 0.04ppm, 0.05ppm, 0.06ppm, 0.07ppm, 0.08ppm, 0.09ppm, two Nitrogen oxide, ammonia are passed through closed container, apply voltage at probe both ends, detect the electric current of gas sensor through the invention；
If cannot detect, nitric oxide, nitrogen dioxide, ammonia that concentration is 1.0ppm are passed through closed container, gas Time of the body in closed container is kept for 10 minutes, is applied voltage at probe both ends, is detected gas sensor through the invention Electric current；If can detect, respectively by concentration be 0.20ppm, 0.30ppm, 0.40ppm, 0.50ppm, 0.60ppm, Nitric oxide, nitrogen dioxide, the ammonia of 0.70ppm, 0.80ppm, 0.90ppm are passed through closed container, apply electricity at probe both ends Pressure, detects the electric current of gas sensor through the invention；
If cannot detect, nitric oxide, nitrogen dioxide, ammonia that concentration is 10.0ppm are passed through closed container, gas Time of the body in closed container is kept for 10 minutes, is applied voltage at probe both ends, is detected gas sensor through the invention Electric current；If can detect, respectively by concentration be 2.0ppm, 3.0ppm, 4.0ppm, 5.0ppm, 6.0ppm, 7.0ppm, Nitric oxide, nitrogen dioxide, the ammonia of 8.0ppm, 9.0ppm are passed through closed container, apply voltage at probe both ends, detection passes through The electric current of gas sensor of the invention；
And so on, until obtaining the accurate detection limit.
Embodiment 1: the preparation of highly sensitive toxic gas sensor
Preparation step is as follows:
Step 1: silicon being prepared into the silicon wafer with a thickness of 500 μm as semiconductor substrate, and in silicon wafer disposed thereon thickness For 200 μm of SiO2Barrier layer；
Step 2: in the SiO of step 12Deposited by electron beam evaporation a layer thickness is the metal molybdenum of 10nm above barrier layer, and right This layer of metal molybdenum carries out vulcanizing treatment, obtains the layer of molybdenum-disulfide (sulphur of the multilayer homeotropic texture with a thickness of 15nm or so When changing processing, control reaction zone temperature is 770 DEG C, and the heating temperature to sulphur powder is 220 DEG C)；
Step 3: the spin coating photoresist above the layer of molybdenum-disulfide of step 2, and photoetching is carried out to photoresist and obtains template, then Layer of molybdenum-disulfide is performed etching by template, obtains and has effigurate layer of molybdenum-disulfide；
Step 4: remove the residual photoresist of step 3, have effigurate layer of molybdenum-disulfide disposed thereon with a thickness of The Au electrode of 300nm；
Step 5: step 4 Au electrode disposed thereon with a thickness of 100nm SiO2Passivation layer, obtaining has high sensitivity Toxic gas sensor.
Obtained toxic gas sensor is observed to (such as Fig. 3) to go forward side by side line sensitivity and minimum detection limit under Electronic Speculum Detection.(the results are shown in Table 1)
1 minimum detection limit result of table
Minimum detection limit
NO 0.1ppm
NO2 0.1ppm
NH3 0.2ppm
Comparative example 1: the preparation (CVD method) of conventional toxic gas sensor
Preparation step is as follows:
Step 1: silicon being prepared into the silicon wafer with a thickness of 500 μm as semiconductor substrate, and in silicon wafer disposed thereon thickness For 200 μm of SiO2Barrier layer；
Step 2: the ceramic boat equipped with sulphur powder being put into the upstream of tube furnace, the ceramic boat equipped with molybdenum trioxide is put into tubular type The downstream of furnace, by the SiO of step 12Barrier layer is placed on the side of the ceramic boat equipped with molybdenum trioxide, before the reaction a hour elder generation Ar (70sccm) is passed through as protective gas, is then heated the upstream and downstream of tube furnace simultaneously, upstream is with 2.7 DEG C/min's Speed is heated to 160 DEG C, and downstream is heated to 650 DEG C with the speed of 10.7 DEG C/min, obtains the multiple-layer horizontal arrangement of 10nm or so The layer of molybdenum-disulfide of structure；
Step 3: the spin coating photoresist above the layer of molybdenum-disulfide of step 2, and photoetching is carried out to photoresist and obtains template, then Layer of molybdenum-disulfide is performed etching by template, obtains and has effigurate layer of molybdenum-disulfide；
Step 4: remove the residual photoresist of step 3, have effigurate layer of molybdenum-disulfide disposed thereon with a thickness of The Au electrode of 300nm；
Step 5: step 4 Au electrode disposed thereon with a thickness of 100nm SiO2Passivation layer, obtaining has high sensitivity Toxic gas sensor.
Obtained toxic gas sensor is observed to (such as Fig. 4) to go forward side by side line sensitivity and minimum detection limit under Electronic Speculum Detection.(the results are shown in Table 2)
2 minimum detection limit result of table
Minimum detection limit
NO 0.5ppm
NO2 0.8ppm
NH3 1ppm
Although the present invention has been described by way of example and in terms of the preferred embodiments, it is not intended to limit the invention, any to be familiar with this skill The people of art can do various change and modification, therefore protection model of the invention without departing from the spirit and scope of the present invention Enclosing subject to the definition of the claims.

Claims (10)

1. a kind of high sensitivity toxic gas sensor, which is characterized in that the toxic gas sensor includes semiconductor substrate (1), metal-semiconductor barrier layer (2), two-dimentional Transition Metal Sulfur/selenide layers (3), metal electrode (4) and metal passivation layer (5)；
The toxic gas includes nitric oxide, nitrogen dioxide and ammonia；
It is described two dimension Transition Metal Sulfur/selenide layers (3) by multilayer homeotropic texture two-dimentional Transition Metal Sulfur/selenides structure At；
Semiconductor substrate (1), metal-semiconductor barrier layer (2) in the toxic gas sensor, two-dimentional Transition Metal Sulfur/ Selenide layers (3), metal electrode (4) and metal passivation layer (5) are arranged successively laying according to sequence from bottom to up.
2. a kind of highly sensitive toxic gas sensor as described in claim 1, which is characterized in that the semiconductor substrate (1) material is sapphire, silicon, gallium nitride, GaAs, aluminium nitride or spinelle.
3. a kind of highly sensitive toxic gas sensor as claimed in claim 1 or 2, which is characterized in that the semiconductor lining The material at bottom (1) is silicon.
4. a kind of highly sensitive toxic gas sensor a method according to any one of claims 1-3, which is characterized in that the metal- The material of semiconductor barrier (2) is SiO2。
5. a kind of highly sensitive toxic gas sensor as described in claim 1-4 is any, which is characterized in that the two dimension mistake Metal sulphur/selenide layers (3) are crossed to be made of the molybdenum disulfide of multilayer homeotropic texture.
6. a kind of highly sensitive toxic gas sensor a method as claimed in any one of claims 1 to 5, which is characterized in that the metal electricity The material of pole (4) is golden (Au).
7. a kind of highly sensitive toxic gas sensor as described in claim 1-6 is any, which is characterized in that the metallic blunt The material for changing layer (5) is SiO2。
8. a kind of preparation method of highly sensitive toxic gas sensor as claimed in claim 1, which is characterized in that It comprises the following steps:
Step 1: preparation semiconductor substrate (1), and in the certain thickness metal-semiconductor resistance of semiconductor substrate (1) disposed thereon Barrier (2)；
Step 2: step 1 metal-semiconductor barrier layer (2) above one layer of metal of electron beam evaporation, and to this layer of metal into Row sulphur/selenization obtains two-dimentional Transition Metal Sulfur/selenide layers (3) of multilayer homeotropic texture；
Step 3: the spin coating photoresist (6) above two-dimentional Transition Metal Sulfur/selenide layers (3) of step 2, and to photoresist (6) It carries out photoetching and obtains template, then two-dimentional Transition Metal Sulfur/selenide layers (3) are performed etching by template, obtain with certain Two-dimentional Transition Metal Sulfur/selenide layers (3) of shape；
Step 4: removing the residual photoresist (6) of step 3, having effigurate two-dimentional Transition Metal Sulfur/selenide layers (3) Disposed thereon metal electrode (4)；
Step 5: in the certain thickness metal passivation layer of metal electrode (4) disposed thereon (5) of step 4, obtaining a kind of highly sensitive Spend toxic gas sensor.
9. a kind of toxic gas detection device, which is characterized in that the poisonous gas detection device includes claim 1-7 any A kind of highly sensitive toxic gas sensor.
10. a kind of highly sensitive toxic gas sensor or according to any one of claims 8 a kind of high as claimed in claim 1 to 7 The toxic gas sensor or one kind as claimed in claim 9 that the preparation method of sensitivity toxic gas sensor is prepared have Application of the poisonous gas detection device in terms of gas detection.
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Publication number Priority date Publication date Assignee Title
CN111579594A (en) * 2020-05-27 2020-08-25 上海交通大学 Application of room temperature gas sensor in nerve agent detection

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WO2013051790A2 (en) * 2011-10-04 2013-04-11 한국과학기술원 Biosensor using a field effect transistor
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111579594A (en) * 2020-05-27 2020-08-25 上海交通大学 Application of room temperature gas sensor in nerve agent detection

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