CN109192680B - Chemical liquid tank device - Google Patents
Chemical liquid tank device Download PDFInfo
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- CN109192680B CN109192680B CN201810982766.2A CN201810982766A CN109192680B CN 109192680 B CN109192680 B CN 109192680B CN 201810982766 A CN201810982766 A CN 201810982766A CN 109192680 B CN109192680 B CN 109192680B
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- chemical liquid
- pipeline
- chemical
- bath
- liquid tank
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- 239000000126 substance Substances 0.000 title claims abstract description 145
- 239000007788 liquid Substances 0.000 title claims abstract description 116
- 150000002500 ions Chemical class 0.000 claims abstract description 52
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 40
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 20
- 238000007865 diluting Methods 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 13
- 239000000243 solution Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 7
- 210000005056 cell body Anatomy 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- 238000010790 dilution Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
The invention relates to a chemical liquid bath device, comprising: the chemical liquid tank is used for containing chemical liquid; the circulating unit comprises a circulating pipeline connected with the chemical liquid tank body, one end of the circulating pipeline is connected to the solution output end of the chemical liquid tank body, the other end of the circulating pipeline is connected to a nozzle in the chemical liquid tank body, and chemical liquid flows out of the solution output end of the chemical liquid tank body and is sprayed out of the nozzle after passing through the circulating pipeline to enter the chemical liquid tank body; the concentration adjusting unit comprises a branch pipeline, wherein the input end and the output end of the branch pipeline are connected to the circulating pipeline through a three-way valve respectively, an ion source container is arranged on the path of the branch pipeline, and the two ends of the ion source container are communicated with the branch pipeline and used for placing ion source substances. The chemical liquid groove device can automatically adjust the concentration of impurity ions in the chemical liquid.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a chemical liquid tank device.
Background
In a phosphoric acid etching process in a semiconductor process, the Si concentration in a phosphoric acid solution in a phosphoric acid tank needs to be maintained within a certain range to maintain a stable etching rate. Since the Si concentration in phosphoric acid changes as the etching process proceeds, the Si concentration in the phosphoric acid solution needs to be adjusted by a certain means to be controlled within a certain range.
In the prior art, the concentration of Si can be reduced by replacing a new phosphoric acid solution, or the concentration of Si in the phosphoric acid solution can be increased by dissolving a SiN layer on the surface of a wafer, so that the concentration of Si in the phosphoric acid solution is stable. The above process consumes a lot of time and wafer resources, and is inefficient.
How to improve the adjustment efficiency of the concentration of Si in the phosphoric acid solution is a problem to be solved urgently at present.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a chemical liquid tank device, which can automatically adjust the concentration of impurity ions in chemical solution in the chemical liquid tank.
To solve the above problems, an embodiment of the present invention provides a chemical tank apparatus, including: a chemical bath apparatus, comprising: the chemical liquid tank is used for containing chemical liquid; the circulating unit comprises a circulating pipeline connected with the chemical liquid tank body, one end of the circulating pipeline is connected to the solution output end of the chemical liquid tank body, the other end of the circulating pipeline is connected to a nozzle in the chemical liquid tank body, and chemical liquid flows out of the solution output end of the chemical liquid tank body and is sprayed out of the nozzle after passing through the circulating pipeline to enter the chemical liquid tank body; the concentration adjusting unit comprises a branch pipeline, wherein the input end and the output end of the branch pipeline are connected to the circulating pipeline through a three-way valve respectively, an ion source container is arranged on the path of the branch pipeline, and the two ends of the ion source container are communicated with the branch pipeline and used for placing ion source substances.
Optionally, the ion source substance is a chemical substance that can be dissolved in the chemical liquid.
Optionally, the chemical liquid is phosphoric acid, and the ion source substance includes at least one of silicon nitride and silicon oxide.
Optionally, the circulation unit further includes a heater, a filter, and a pump disposed on the circulation line path.
Optionally, the heater and the filter are arranged between the output end of the branch pipeline and the chemical liquid tank body.
Optionally, the pump is disposed between the chemical liquid tank and the input end of the branch pipeline.
Optionally, the method further includes: and the chemical liquid discharge unit comprises a discharge pipeline communicated to the chemical liquid tank and a first valve arranged on the discharge pipeline.
Optionally, the method further includes: and the diluting unit comprises a diluting pipeline and a second valve arranged on the diluting pipeline, one end of the diluting pipeline is introduced into the chemical liquid tank, and the other end of the diluting pipeline is connected to a diluting liquid source.
Optionally, the chemical liquid tank body comprises an outer tank body and an inner tank body located in the outer tank body.
Optionally, the solution output end is located on the outer tank body, and the nozzle is located in the inner tank body.
The chemical liquid tank device comprises a concentration adjusting unit, and the concentration of impurity ions in the chemical liquid can be automatically adjusted, so that the ion concentration is not required to be adjusted by replacing a solution or dissolving a specific program such as a specific material film on a wafer, the time can be saved, and the efficiency can be improved.
Drawings
FIG. 1 is a schematic diagram of a chemical bath apparatus according to one embodiment of the present invention;
FIG. 2 is a schematic diagram of a control structure of a chemical tank apparatus according to an embodiment of the present invention.
Detailed Description
The following describes in detail a specific embodiment of the chemical tank apparatus according to the present invention with reference to the accompanying drawings.
Referring to fig. 1, a chemical tank device according to an embodiment of the present invention is shown.
The chemical liquid bath device comprises: a chemical liquid tank 100, a circulation unit and a concentration adjustment unit.
The chemical liquid tank 100 is used for containing chemical liquid. In this embodiment, the chemical liquid is phosphoric acid. In other specific embodiments, the chemical liquid may also be other wet etching solutions or cleaning solutions such as hydrofluoric acid, and the like, which are used for wet etching or rinsing the wafer 130 placed in the chemical liquid tank 100.
Circulation unit, including connecting the circulation pipeline 110 of chemical liquid cell body, circulation pipeline 110 one end is connected to the solution output of chemical liquid cell body 100, the other end is connected to nozzle 116 in the chemical liquid cell body 100, the chemical liquid certainly the solution output of chemical liquid cell body 100 flows out, process behind the circulation pipeline 110 through nozzle 116 blowout and reentrant in the chemical liquid cell body 100.
In this embodiment, the chemical tank 100 includes an outer tank 102 and an inner tank 101 located inside the outer tank 102. The solution output end is located at the bottom of the outer tank body 102, and the nozzle 116 is located in the inner tank body 101, specifically, at the bottom of the inner tank body 101. The nozzle 116 sprays chemical liquid into the inner tank body 101, the chemical liquid in the inner tank body 101 flows and overflows into the outer tank body 102, enters the circulation unit through the solution output end, and returns to the inner tank body 101.
The circulation unit further includes a heater 114, a filter 115, and a pump 111 disposed on a path of the circulation line 110. The pump 111 is used for pumping chemical liquid out of the outer tank body 102, the chemical liquid is heated by the heater 114, and the chemical liquid is filtered by the filter 115 and then returns to the inner tank body 101 through the nozzle 116. Particulate impurities in the chemical liquid may be filtered and the temperature of the chemical liquid may be maintained by the circulation unit.
In the implementation of this specific embodiment, the chemical liquid tank device further includes a concentration adjusting unit, the concentration adjusting unit includes a branch pipe 120, an input end of the branch pipe 120 is connected to the circulation pipe 110 through a first three-way valve 112, an output end of the branch pipe 120 is connected to the circulation pipe 110 through a second three-way valve 113, an ion source container 121 is disposed on a path of the branch pipe 120, and two ends of the ion source container 121 are communicated with the branch pipe 120 for placing ion source substances. By adjusting the states of the second three-way valve 113 and the first three-way valve 112, the chemical liquid flowing out of the chemical liquid tank 110 can flow into the branch line 120 after passing through the circulation line 110 to the first three-way valve 112, and then flow into the circulation line 110 after passing through the ion source container 121 through the second three-way valve 113.
The ion source material in the ion source container 121 contains an ion element to be adjusted in the chemical liquid, and is soluble in the chemical liquid. In this embodiment, the chemical liquid is phosphoric acid, and the concentration of Si ions in the phosphoric acid solution needs to be adjusted. Therefore, the ion source material is a material containing silicon and soluble in phosphoric acid, and includes at least one of silicon-containing compounds such as silicon nitride, silicon oxide, and silicon oxynitride.
When the concentration of Si ions in the phosphoric acid solution is low, the circulation pipeline 110 is communicated with the branch pipeline 120, the phosphoric acid solution flows through the ion source container 121, so that part of ion source substances in the ion source container 121 are dissolved, Si ions are released, and the phosphoric acid solution carries the Si ions to return to the chemical liquid tank through the circulation pipeline 110, so that the Si concentration of the phosphoric acid solution in the chemical liquid tank 100 can be increased.
In this embodiment, the heater 114 and the filter 115 are disposed between the output end of the branch pipe 120 and the chemical liquid tank 100. After the chemical liquid passes through the ion source container 121 and enters the circulation line 110 again, the chemical liquid is heated by the heater 114 and filtered by the filter 115, so that solid impurities carried out from the ion source container 121 by the chemical liquid can be filtered.
The pump 111 is disposed between the chemical liquid tank 100 and the input end of the branch pipe 120, so as to control the flow rate of the chemical liquid entering the branch pipe or the circulation pipe.
When the concentration of a certain ion in the chemical liquid is too high, the concentration of the certain ion in the chemical liquid needs to be reduced. Thus, in this embodiment, the chemical bath apparatus further comprises: and the diluting unit comprises a diluting pipeline 131 and a second valve 132 arranged on the diluting pipeline 131, one end of the diluting pipeline 131 is introduced into the chemical liquid tank 100, and the other end of the diluting pipeline 131 is used for being connected to a deionized water source. In this embodiment, one end of the dilution pipeline 131 directly leads into the inner tank body 101 of the chemical liquid tank body 100, and is used for directly diluting the concentration of the chemical liquid in the inner tank body 101. The second valve 132 is used for controlling the on/off of the dilution line 131. In other specific embodiments, one end of the dilution pipeline 131 may also open into the outer tank 102. The introduction of deionized water can not only cause the concentration of impurity ions in the chemical liquid to be reduced, but also cause the concentration of effective components in the chemical liquid to be reduced. In other specific embodiments, one end of the dilution pipeline 131 is further configured to be connected to a pure chemical liquid source for introducing a chemical liquid without impurity ions, so as to dilute only the concentration of the impurity ions in the inner tank 101.
The chemical bath apparatus further comprises: a chemical liquid discharge unit including: a discharge line 141 communicated to the chemical liquid tank 100, and a first valve 142 disposed on the discharge line. When the chemical liquid tank is overfilled due to the introduction of the deionized water, or the chemical liquid needs to be discharged, the chemical liquid in the chemical liquid tank 100 can be discharged by opening the first valve 142. In this embodiment, the discharge line 141 is connected to the inner tank 101.
Referring to fig. 2, the chemical liquid tank apparatus further includes a concentration detector 201 for detecting the concentration of the impurity ions in the chemical liquid tank 100 to obtain the information of the concentration of the impurity ions in the chemical liquid in real time. Specifically, the concentration detector 201 is used for detecting the ion concentration of the chemical liquid in the inner tank 101. In the specific real-time manner, the chemical liquid tank device further includes a controller 202, connected to the concentration detector 201 and the first three-way valve 112, the second three-way valve 113, the first valve 142, and the second valve 132, and configured to control on and off of the first three-way valve 112, the second three-way valve 113, the first valve 142, and the second valve 132 according to the concentration of the impurity ions in the chemical liquid tank 100, which is obtained by the concentration detector 201.
In one embodiment, the chemical solution is a phosphoric acid solution, the impurity ions are Si ions, and a silicon-containing compound is disposed in the ion source container 121. When the concentration detector 201 detects that the concentration of Si ions in the inner tank 101 is lower than a threshold value, the controller 202 controls the first three-way valve 112 to communicate the circulation line 110 with the branch line 120, so that the chemical liquid flows into the branch line 120 from the circulation line 110 and passes through the ion source container 121, and the concentration of Si in the chemical liquid is increased; the second three-way valve 113 is controlled to communicate the branch pipeline 120 and the downstream circulation pipeline 110, so that the chemical liquid in the branch pipeline 120 flows into the circulation pipeline 110 and then flows into the inner tank body 101, and the Si concentration of the chemical liquid in the inner tank body 101 is increased. When the concentration detector 201 detects that the concentration of Si ions in the inner tank 101 is higher than a threshold value, the controller 202 controls the first three-way valve 112 and the second three-way valve 113 to be disconnected from the branch pipeline 120, and the chemical liquid flows only in the circulation pipeline; and the second valve 132 is opened, so that the deionized water enters the inner tank body 101 through the dilution pipeline 131, and the chemical liquid in the inner tank body 101 is diluted, so that the concentration of the Si ions in the chemical liquid is reduced.
The chemical liquid tank device comprises a concentration adjusting unit, and the concentration of impurity ions in chemical liquid can be automatically adjusted, so that the ion concentration does not need to be adjusted by replacing solution or dissolving specific programs such as specific material films on a wafer, the time can be saved, and the efficiency is improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. A chemical bath apparatus, comprising:
the chemical liquid tank is used for containing chemical liquid;
the circulating unit comprises a circulating pipeline connected with the chemical liquid tank body, one end of the circulating pipeline is connected to the solution output end of the chemical liquid tank body, the other end of the circulating pipeline is connected to a nozzle in the chemical liquid tank body, and chemical liquid flows out of the solution output end of the chemical liquid tank body and is sprayed out of the nozzle after passing through the circulating pipeline to enter the chemical liquid tank body;
the concentration adjustment unit comprises a branch pipeline, wherein the input end and the output end of the branch pipeline are connected to the circulating pipeline through a three-way valve respectively, an ion source container is arranged on the path of the branch pipeline, the two ends of the ion source container are communicated with the branch pipeline and used for placing ion source substances, and the ion source substances can be dissolved in chemicals of the chemical liquid.
2. A chemical bath arrangement according to claim 1, wherein the chemical bath is phosphoric acid and the ion source substance comprises at least one of silicon nitride and silicon oxide.
3. A chemical tank device according to claim 1, wherein the circulation unit further comprises a heater, a filter and a pump provided on the circulation line path.
4. A chemical liquid bath device according to claim 3, wherein the heater and filter are disposed between the output of the branch conduit and the chemical liquid bath body.
5. A chemical liquid bath device according to claim 3, wherein the pump is disposed between the chemical liquid bath body and the input end of the branch conduit.
6. A chemical bath apparatus as in claim 1, further comprising: and the chemical liquid discharge unit comprises a discharge pipeline communicated to the chemical liquid tank and a first valve arranged on the discharge pipeline.
7. A chemical bath apparatus as in claim 1, further comprising: and the diluting unit comprises a diluting pipeline and a second valve arranged on the diluting pipeline, one end of the diluting pipeline is introduced into the chemical liquid tank, and the other end of the diluting pipeline is connected to a diluting liquid source.
8. A chemical bath arrangement according to claim 1, wherein the chemical bath body comprises an outer bath body and an inner bath body within the outer bath body.
9. A chemical bath arrangement according to claim 8, wherein the solution output is located on the outer bath and the nozzle is located in the inner bath.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810982766.2A CN109192680B (en) | 2018-08-27 | 2018-08-27 | Chemical liquid tank device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810982766.2A CN109192680B (en) | 2018-08-27 | 2018-08-27 | Chemical liquid tank device |
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| Publication Number | Publication Date |
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| CN109192680A CN109192680A (en) | 2019-01-11 |
| CN109192680B true CN109192680B (en) | 2020-12-11 |
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| CN201810982766.2A Active CN109192680B (en) | 2018-08-27 | 2018-08-27 | Chemical liquid tank device |
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| CN110132882A (en) * | 2019-05-13 | 2019-08-16 | 长江存储科技有限责任公司 | Wet etching medicine liquid ingredient detection device and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02243783A (en) * | 1989-03-17 | 1990-09-27 | Tokico Ltd | Device for controlling processing solution composition |
| JPH0812854B2 (en) * | 1993-01-22 | 1996-02-07 | 日本電気株式会社 | Wet etching equipment |
| JPH10137572A (en) * | 1996-11-07 | 1998-05-26 | Fujitsu Ltd | Method for controlling concentration of liquid chemicals |
| JP3928998B2 (en) * | 1998-04-08 | 2007-06-13 | エム・エフエスアイ株式会社 | Etching solution regeneration processing apparatus and etching apparatus using the same |
| EP1306886B1 (en) * | 2001-10-18 | 2008-07-30 | Infineon Technologies AG | Apparatus for assessing the silicon dioxide content |
| US8409997B2 (en) * | 2007-01-25 | 2013-04-02 | Taiwan Semiconductor Maufacturing Co., Ltd. | Apparatus and method for controlling silicon nitride etching tank |
| JP6302708B2 (en) * | 2013-03-29 | 2018-03-28 | 芝浦メカトロニクス株式会社 | Wet etching equipment |
| CN206742267U (en) * | 2017-05-05 | 2017-12-12 | 苏州阿特斯阳光电力科技有限公司 | A kind of texturing slot |
| JP6994899B2 (en) * | 2017-10-20 | 2022-01-14 | 東京エレクトロン株式会社 | Board processing equipment, board processing method and storage medium |
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