CN109192680A - Chemical liquids slot device - Google Patents
Chemical liquids slot device Download PDFInfo
- Publication number
- CN109192680A CN109192680A CN201810982766.2A CN201810982766A CN109192680A CN 109192680 A CN109192680 A CN 109192680A CN 201810982766 A CN201810982766 A CN 201810982766A CN 109192680 A CN109192680 A CN 109192680A
- Authority
- CN
- China
- Prior art keywords
- chemical liquids
- pass
- groove body
- slot device
- bye
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 137
- 239000000126 substance Substances 0.000 title claims abstract description 136
- 230000001351 cycling effect Effects 0.000 claims abstract description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 40
- 239000000243 solution Substances 0.000 claims description 27
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 20
- 238000010790 dilution Methods 0.000 claims description 18
- 239000012895 dilution Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 239000003085 diluting agent Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 6
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
The present invention relates to a kind of chemical liquids slot devices, comprising: chemical liquids groove body, for holding chemical liquids；Cycling element, circulation line including connecting the chemical liquids groove body, described circulation line one end is connected to the solution output end of the chemical liquids groove body, the other end is connected to the intracorporal nozzle of chemical liquids slot, chemical liquids are flowed out from the solution output end of the chemical liquids groove body, are sprayed and are entered in the chemical liquids groove body by the nozzle after the circulation line；Concentration adjustment unit, including bye-pass, the input terminal and output end of the bye-pass pass through triple valve respectively and are connected to the circulation line, and ion source container is provided on the path of the bye-pass, ion source container both ends are connected to the bye-pass, for placing ion source.The chemical liquids slot device being capable of concentration impurity ion in adjust automatically chemical liquids.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of chemical liquids slot devices.
Background technique
In phosphoric acid corrosion technique in semiconductor processing, the Si concentration needs in the phosphoric acid solution in phosphoric acid groove are maintained at
It is a certain range of to maintain stable etch rate.With the progress of etching process, the Si concentration in phosphoric acid can change, because
This needs that the Si concentration in phosphoric acid solution is adjusted by certain means, in a certain range by the control of Si concentration.
In the prior art, Si concentration can be reduced by the phosphoric acid solution more renewed, or passes through dissolution crystal column surface
SiN layer improve the Si concentration in phosphoric acid solution so that the Si concentration in phosphoric acid solution is stablized.The above process can expend
Plenty of time and wafer resource, efficiency are lower.
The regulated efficiency for how improving Si concentration in phosphoric acid solution is current urgent problem to be solved.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of chemical liquids slot devices, can automatically adjust the chemistry
The concentration impurity ion in chemical solution in liquid bath.
To solve the above problems, a specific embodiment of the invention provides a kind of chemical liquids slot device, comprising: a kind of chemistry
Liquid bath device characterized by comprising chemical liquids groove body, for holding chemical liquids；Cycling element, including the connection chemistry
The circulation line of liquid bath body, described circulation line one end are connected to the solution output end of the chemical liquids groove body, other end connection
To the intracorporal nozzle of chemical liquids slot, chemical liquids are flowed out from the solution output end of the chemical liquids groove body, by the circulation
It is sprayed and is entered in the chemical liquids groove body by the nozzle after pipeline；Concentration adjustment unit, including bye-pass, the branch pipe
The input terminal and output end on road pass through triple valve respectively and are connected to the circulation line, and are provided on the path of the bye-pass
Ion source container, ion source container both ends are connected to the bye-pass, for placing ion source.
Optionally, the ion source is the chemicals that can be dissolved in the chemical liquids.
Optionally, the chemical liquids are phosphoric acid, and the ion source includes at least one of silicon nitride, silica.
Optionally, the cycling element further include the heater being set on the circulation line path, filter and
Pump.
Optionally, the heater and filter be set to the bye-pass output end and the chemical liquids groove body it
Between.
Optionally, the pump is set between the chemical liquids groove body and the input terminal of the bye-pass.
Optionally, further includes: chemical liquids deliverying unit, including being connected to the discharge line of the chemical liquid bath and being set to
The first valve on the discharge line.
Optionally, further includes: dilution unit including dilution pipeline and is set to the second valve of the dilution tube road,
Described dilution pipeline one end is passed through the chemical liquids groove body, and the other end is for being connected to diluent liquid source.
Optionally, the chemical liquids groove body include outer tank body and be located at the intracorporal inner tank body of the outer groove.
Optionally, the solution output end is located in the outer tank body, and the nozzle is located in the inner tank body.
Chemical liquids slot device of the invention includes concentration adjustment unit, and the foreign ion that can be automatically adjusted in chemical liquids is dense
Degree, without being adjusted by specific programs such as certain material films on replacement solution or dissolution wafer to ion concentration
It is whole, it can save the time, improve efficiency.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the chemical liquids slot device of the embodiment of the invention；
Fig. 2 is the control structure schematic diagram of the chemical liquids slot device of the embodiment of the invention.
Specific embodiment
It elaborates with reference to the accompanying drawing to the specific embodiment of chemical liquids slot device provided by the invention.
Referring to FIG. 1, the specific embodiment of the chemical liquids slot device for the embodiment of the invention.
The chemical liquids slot device includes: chemical liquids groove body 100, cycling element and concentration adjustment unit.
The chemical liquids groove body 100 is for holding chemical liquids.In the specific embodiment, the chemical liquids are phosphoric acid.?
In other specific embodiments, the chemical liquids can also be other wet etching solution or the cleaning solutions such as hydrofluoric acid, be used for
Wet etching or flushing are carried out to the wafer 130 being placed in the chemical liquids groove body 100.
The cycling element, the circulation line 110 including connecting the chemical liquids groove body, described 110 one end of circulation line
It is connected to the solution output end of the chemical liquids groove body 100, the other end is connected to the nozzle 116 in the chemical liquids groove body 100,
Chemical liquids are flowed out from the solution output end of the chemical liquids groove body 100, pass through the nozzle after the circulation line 110
116 spray and are again introduced into the chemical liquids groove body 100.
In the specific embodiment, the chemical liquids groove body 100 includes outer tank body 102 and is located in the outer tank body 102
Inner tank body 101.The solution output end is located at 102 bottom of outer tank body, and the nozzle 116 is located at the inner tank body 101
It is interior, specifically, being located at the bottom of the inner tank body 101.Nozzle 116 sprays into chemical liquids, inner tank body into the inner tank body 101
Chemical liquids flowing in 101 is spilled over in outer tank body 102, is entered cycling element by solution output end, is returned again to inner tank body
In 101.
The cycling element further include the heater 114 being set on 110 path of circulation line, filter 115 with
And pump 111.The pump 111 out of outer tank body 102 for extracting chemical liquids out, and chemical liquids are heated by heater 114 and mistake
Filter 115 is returned in inner tank body 101 after filtering by nozzle 116.It can be in filtering both chemical liquid by the cycling element
Grain impurity, and maintain the temperature of the chemical liquids.
During the specific embodiment party is implemented, the chemical liquids slot device further includes concentration adjustment unit, and the concentration adjustment is single
Member includes bye-pass 120, and the input terminal of the bye-pass 120 is connected to the circulation line 110 by the first triple valve 112,
The output end of the bye-pass 120 is connected to the circulation line 110 by the second triple valve 113, and the bye-pass 120
Ion source container 121 is provided on path, 121 both ends of ion source container are connected to the bye-pass 120, for place from
Component substance.By adjusting the state of second triple valve 113 and the first triple valve 112, chemically liquid bath 110 can be made
The chemical liquids of outflow flow into bye-pass 120 after 110 to the first triple valve 112 of circulation line, by the ion source container
121 and then by the second triple valve 113 flow into circulation line 110.
Ion source in the ion source container 121, comprising the ion elements for needing to adjust in the chemical liquids, and
The chemical liquids can be dissolved in.In the specific embodiment, the chemical liquids be phosphoric acid, need to the Si in phosphoric acid solution from
Sub- concentration is adjusted.Therefore, the ion source be containing element silicon and the substance of phosphoric acid can be dissolved in, including silicon nitride,
At least one of silicon-containing compounds such as silica and silicon oxynitride.
Make when the Si ion concentration in phosphoric acid solution is relatively low, the circulation line 110 is connected to bye-pass 120, phosphoric acid
Solution flows through the ion source container 121, so that the part ion source substance in the ion source container 121 is dissolved, release
Si ion out, phosphoric acid solution carries Si ion and returns in chemical liquid bath by circulation line 110, so as to improve the chemistry
The Si concentration of phosphoric acid solution in liquid bath body 100.
In the specific embodiment, the heater 114 and filter 115 are set to the output end of the bye-pass 120
Between the chemical liquids groove body 100.After chemical liquids are again introduced into circulation line 110 after ion source container 121, by
The heating of heater 114 and filter 115 filter, and can filter out chemical liquids and take out of out of described ion source container 121
Solid impurity.
The pump 111 is set between the chemical liquids groove body 100 and the input terminal of the bye-pass 120, convenient for control
Chemical flow quantity into the bye-pass or circulation line.
When a certain ion concentration in the chemical liquids is excessively high, need to reduce the concentration of the ion chemical liquids Nei.
Therefore, in the specific embodiment, the chemical liquids slot device further include: dilution unit, the dilution unit include dilution tube
Road 131 and the second valve 132 being set on the dilution pipeline 131, described 131 one end of dilution pipeline is passed through the chemical liquids
Groove body 100, the other end is for being connected to deionized water source.In the specific embodiment, described 131 one end of dilution pipeline is directly logical
Enter in 101 in the inner tank body of the chemical liquids groove body 100, for directly diluting the chemical liquids concentration in the inner tank body 101.Institute
The second valve 132 is stated for controlling the on-off of the dilution pipeline 131.In other specific embodiments, the dilution pipeline
131 one end can also be passed through in the outer tank body 102.Being passed through deionized water can not only cause the foreign ion in chemical liquids dense
Degree decline, the effective component concentration decline for the chemical liquids for being also.In other specific embodiments, the dilution pipeline 131 1
End is also used to be connected to pure chemical liquids source, for being passed through the chemical liquids of ion free from foreign meter, to only dilute inner tank body 101
The concentration of interior foreign ion.
The chemical liquids slot device further include: chemical liquids deliverying unit, the chemical liquids deliverying unit include: to be connected to institute
State the discharge line 141 of chemical liquids groove body 100 and the first valve 142 being set on the discharge line.When the chemical liquids
Groove body leads to chemical liquids overfill since deionized water is passed through, or needing for chemical liquids to be discharged is to pass through unlatching first valve
Door 142 chemical liquids in the chemical liquids groove body 100 can be discharged.In the specific embodiment, the discharge line 141 connects
Pass to the inner tank body 101.
Referring to FIG. 2, the chemical liquids slot device further includes a concentration detector 201, for detecting the chemical liquid bath
The concentration of foreign ion in chemical liquids in body 100, to obtain the information of concentration impurity ion in the chemical liquids in real time.Specifically
, concentration detector 201 is used to detect the chemical liquids ion concentration in the inner tank body 101.In the described specific real-time mode,
The chemical liquids slot device further includes a controller 202, with the concentration detector 201 and first triple valve 112, second
Triple valve 113, the first valve 142 and the connection of the second valve 132, the chemistry for being obtained according to the concentration detector 201
The concentration of foreign ion in chemical liquids in liquid bath body 100 controls first triple valve 112, the second triple valve 113, first
The on-off of valve 142 and the second valve 132.
In a specific embodiment, the chemical liquids be phosphoric acid solution, the foreign ion be Si ion, it is described from
Silicon-containing compound is placed in component container 121.When the concentration detector 201 detect the Si in the inner tank body 101 from
When sub- concentration is lower than threshold value, the controller 202 controls first triple valve 112 and is connected to circulation line 110 and bye-pass
120, so that chemical liquids self-circulation pipeline 110 flows into bye-pass 120 and pass through the ion source container 121, improve chemical liquids
Interior Si concentration；The circulation line 110 that second triple valve 113 is connected to the bye-pass 120 and downstream is controlled, so that branch
Chemical liquids in pipeline 120 flow into circulation line 110, and continue to flow into inner tank body 101, to improve in inner tank body 101
The Si concentration of chemical liquids.When the concentration detector 201 detects that the Si ion concentration in the inner tank body 101 is higher than threshold value
When, the controller 202 controls first triple valve 112 and the second triple valve 113 is disconnected with bye-pass 120, and chemical liquids are only
It is flowed in circulation line；And second valve 132 is opened, so that deionized water is entered by the dilution pipeline 131
In inner tank body 101, the chemical liquids in inner tank body 101 are diluted, so that the Si ion concentration in the chemical liquids declines.
Above-mentioned chemical liquids slot device includes concentration adjustment unit, can automatically adjust the concentration impurity ion in chemical liquids,
Without being adjusted by specific programs such as certain material films on replacement solution or dissolution wafer to ion concentration,
So as to save the time, improve efficiency.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of chemical liquids slot device characterized by comprising
Chemical liquids groove body, for holding chemical liquids；
Cycling element, the circulation line including connecting the chemical liquids groove body, described circulation line one end is connected to the chemistry
The solution output end of liquid bath body, the other end are connected to the intracorporal nozzle of chemical liquids slot, and chemical liquids are from the chemical liquids groove body
Solution output end outflow, after the circulation line by the nozzle spray enter the chemical liquids groove body in；
Concentration adjustment unit, including bye-pass, the input terminal and output end of the bye-pass pass through triple valve respectively and are connected to institute
Circulation line is stated, and is provided with ion source container on the path of the bye-pass, ion source container both ends and the branch pipe
Road connection, for placing ion source.
2. chemical liquids slot device according to claim 1, which is characterized in that the ion source is can be dissolved in institute
State the chemicals of chemical liquids.
3. chemical liquids slot device according to claim 1, which is characterized in that the chemical liquids are phosphoric acid, the ion source
Substance includes at least one of silicon nitride, silica.
4. chemical liquids slot device according to claim 1, which is characterized in that the cycling element further include be set to it is described
Heater, filter and pump on circulation line path.
5. chemical liquids slot device according to claim 4, which is characterized in that the heater and filter are set to described
Between the output end of bye-pass and the chemical liquids groove body.
6. chemical liquids slot device according to claim 4, which is characterized in that it is described pump be set to the chemical liquids groove body with
Between the input terminal of the bye-pass.
7. chemical liquids slot device according to claim 1, which is characterized in that further include: chemical liquids deliverying unit, including even
The first valve for passing to the discharge line of the chemical liquid bath and being set on the discharge line.
8. chemical liquids slot device according to claim 1, which is characterized in that further include: dilution unit, including dilution pipeline
With the second valve for being set to the dilution tube road, described dilution pipeline one end is passed through the chemical liquids groove body, and the other end is used
In being connected to diluent liquid source.
9. chemical liquids slot device according to claim 1, which is characterized in that the chemical liquids groove body includes outer tank body and position
In the intracorporal inner tank body of the outer groove.
10. chemical liquids slot device according to claim 9, which is characterized in that the solution output end is located at the outer groove
On body, the nozzle is located in the inner tank body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810982766.2A CN109192680B (en) | 2018-08-27 | 2018-08-27 | Chemical liquid tank device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810982766.2A CN109192680B (en) | 2018-08-27 | 2018-08-27 | Chemical liquid tank device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109192680A true CN109192680A (en) | 2019-01-11 |
| CN109192680B CN109192680B (en) | 2020-12-11 |
Family
ID=64916081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810982766.2A Active CN109192680B (en) | 2018-08-27 | 2018-08-27 | Chemical liquid tank device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109192680B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110132882A (en) * | 2019-05-13 | 2019-08-16 | 长江存储科技有限责任公司 | Wet etching medicine liquid ingredient detection device and method |
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|---|---|---|---|---|
| JPH02243783A (en) * | 1989-03-17 | 1990-09-27 | Tokico Ltd | Device for controlling processing solution composition |
| JPH06236869A (en) * | 1993-01-22 | 1994-08-23 | Nec Corp | Wet etching apparatus |
| JPH10137572A (en) * | 1996-11-07 | 1998-05-26 | Fujitsu Ltd | Method for controlling concentration of liquid chemicals |
| JPH11293479A (en) * | 1998-04-08 | 1999-10-26 | Nisso Engineering Kk | Regeneration treatment apparatus for etchant and etching apparatus using the same |
| EP1306886A1 (en) * | 2001-10-18 | 2003-05-02 | Infineon Technologies AG | Apparatus for assessing the silicon dioxide content |
| CN101231939A (en) * | 2007-01-25 | 2008-07-30 | 台湾积体电路制造股份有限公司 | Apparatus and method for controlling silicon nitride etching tank |
| CN107452649A (en) * | 2013-03-29 | 2017-12-08 | 芝浦机械电子株式会社 | Wet-type etching device |
| CN206742267U (en) * | 2017-05-05 | 2017-12-12 | 苏州阿特斯阳光电力科技有限公司 | A kind of texturing slot |
| CN109698143A (en) * | 2017-10-20 | 2019-04-30 | 东京毅力科创株式会社 | Substrate processing device, processing method for substrate and storage medium |
-
2018
- 2018-08-27 CN CN201810982766.2A patent/CN109192680B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02243783A (en) * | 1989-03-17 | 1990-09-27 | Tokico Ltd | Device for controlling processing solution composition |
| JPH06236869A (en) * | 1993-01-22 | 1994-08-23 | Nec Corp | Wet etching apparatus |
| JPH10137572A (en) * | 1996-11-07 | 1998-05-26 | Fujitsu Ltd | Method for controlling concentration of liquid chemicals |
| JPH11293479A (en) * | 1998-04-08 | 1999-10-26 | Nisso Engineering Kk | Regeneration treatment apparatus for etchant and etching apparatus using the same |
| EP1306886A1 (en) * | 2001-10-18 | 2003-05-02 | Infineon Technologies AG | Apparatus for assessing the silicon dioxide content |
| CN101231939A (en) * | 2007-01-25 | 2008-07-30 | 台湾积体电路制造股份有限公司 | Apparatus and method for controlling silicon nitride etching tank |
| CN107452649A (en) * | 2013-03-29 | 2017-12-08 | 芝浦机械电子株式会社 | Wet-type etching device |
| CN206742267U (en) * | 2017-05-05 | 2017-12-12 | 苏州阿特斯阳光电力科技有限公司 | A kind of texturing slot |
| CN109698143A (en) * | 2017-10-20 | 2019-04-30 | 东京毅力科创株式会社 | Substrate processing device, processing method for substrate and storage medium |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110132882A (en) * | 2019-05-13 | 2019-08-16 | 长江存储科技有限责任公司 | Wet etching medicine liquid ingredient detection device and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109192680B (en) | 2020-12-11 |
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