CN109179396A - The direct transfer device of graphene film and method - Google Patents
The direct transfer device of graphene film and method Download PDFInfo
- Publication number
- CN109179396A CN109179396A CN201811366439.0A CN201811366439A CN109179396A CN 109179396 A CN109179396 A CN 109179396A CN 201811366439 A CN201811366439 A CN 201811366439A CN 109179396 A CN109179396 A CN 109179396A
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- container
- graphene film
- target substrate
- etching liquid
- direct transfer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
Abstract
The invention discloses a kind of direct transfer device of graphene film and methods, belong to technical field of graphene.The direct transfer device of the graphene film includes for accommodating the container of etching liquid, the spring clip for the sealing element of sealing metal substrate and container-contacting surface and for clamping target substrate and container；The clamped portion for the clamping of spring clip one end is provided on container；The channel for etching liquid disengaging is provided on wall of a container；Container is connected with device for exerting.The direct transfer method of the graphene film includes the following steps: a, has the metallic substrates of graphene film to be placed in target substrate growth, and contacts graphene film with target substrate；B, the etching liquid to match with metallic substrates is added to isolating seal on side of the metallic substrates far from target substrate；C, pressure is applied to the etching liquid of addition, and continues setting time；D, the pressure that removal applies, removes the etching liquid of addition, and takes out the target substrate for completing transfer.
Description
Technical field
The present invention relates to technical field of graphene, and in particular to a kind of direct transfer device of graphene film and method.
Background technique
Graphene film because its with it is excellent it is conductive, thermally conductive, mechanical strength is big, the performances such as transparent, flexible.At present in stone
Multiple crossing domains such as black alkene field effect transistor, sensor, flexible touch screen, heat conducting film, filter membrane, radiating element have extensively
General application.The major technique for preparing graphene film at present is by high temperature chemical vapor deposition growth stone on the metallic substrate
Black alkene transfers graphene in target substrate in application, and transfer process or method will have a direct impact on the sheet of graphene
Levy performance.
The method shifted at present is broadly divided into secondary transfer and direct transfer process.PMMA secondary transfer method is that laboratory is main
The method of use, but the graphene of this method transfer often has the problems such as crackle, fold, and PMMA often has residual, can seriously affect
The electric property of graphene, and be limited to spin coating technique and cannot shift on a large scale.And the residual of polymer will be avoided by directly shifting
It stays, improves the quality of graphene.Direct transfer process includes lamination methods and Electrostatic Absorption method, wherein lamination methods are by adding
The mode that heat is carried out simultaneously with roll laminating increases the binding force of graphene and target substrate, but this method be only applicable to it is flexible
Substrate and to porous substrate transfer after graphene film cracky；Electrostatic Absorption method is in the environment of low pressure, by due course
Heating, while mechanical pressure integrally being added to make electrostatic force through matrix to matrix, copper foil of then directly tearing again, but the method needs
It is carried out under low pressure, extensive transfer can be limited to equipment, may not be able to reappear under atmospheric environment at present.
Summary of the invention
For above-mentioned deficiency in the prior art, the present invention is intended to provide a kind of graphene film that do not easily lead to generates breakage
Or the direct transfer device of graphene film and method of crackle.
In order to achieve the purpose that foregoing invention is created, the technical solution adopted by the present invention are as follows:
There is provided a kind of direct transfer device of graphene film comprising for accommodating the container of etching liquid, for sealing gold
Belong to the sealing element of substrate and container-contacting surface and the spring clip for clamping target substrate and container；It is provided on container for spring
Press from both sides the clamped portion of one end clamping；The channel for etching liquid disengaging is provided on wall of a container；Container is connected with device for exerting.
Further, sealing element includes the first sealing ring that the opening edge of container is arranged in.
Further, sealing element include the second sealing ring and be arranged in container opening edge groove, groove and the
The cooperation of two sealing rings.
Further, the material of container is stainless steel.
Further, spring clip includes left spring folder and right spring clip.
It further, further include the rigid substrate with burnishing surface for drop target substrate, the other end of spring clip
For clamping rigid substrate.
A kind of method using the above-mentioned direct transfer device transfer graphene film of graphene film is also provided comprising
Following steps:
A, the metallic substrates that growth has graphene film are placed in target substrate, and make graphene film and target base
Bottom contact；
B, the etching to match with metallic substrates is added to isolating seal on side of the metallic substrates far from target substrate
Liquid；
C, pressure is applied to the etching liquid of addition, and continues setting time；
D, the pressure that removal applies, removes the etching liquid of addition, and takes out the target substrate for completing transfer.
Further, it is performed the following steps before step a: on the burnishing surface that target substrate is placed on rigid substrate.
The invention has the benefit that the graphene film generated in metallic substrates is directly contacted with target substrate, and
Metallic substrates are etched using etching liquid.It is pressurizeed simultaneously using device for exerting to etching liquid, so that the pressure that etching liquid is subject to is greater than
One atmospheric pressure, the binding force increased between graphene film and target substrate just complete graphite after the completion of metal etch
The transfer of alkene film.In the process, graphene film is not easily led to and generates damaged or crackle, and realizes graphene film transfer
Scale.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the direct transfer device of graphene film in specific embodiment after spring clip clamping.
Wherein, 1, device for exerting；2, container；3, the first sealing ring；4, spring clip；5, target substrate；6, stone to be transferred
Black alkene film；7, metallic substrates.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in detail, in order to the technology of the art
Personnel understand the present invention.It should be apparent that embodiment described below is only a part of the embodiments of the present invention, rather than
Whole embodiments.It is not departing from the spirit and scope of the present invention that the attached claims are limited and determined, this field is common
Technical staff is not making any creative work every other embodiment obtained, belongs to protection model of the invention
It encloses.
As shown in Figure 1, the direct transfer device of the graphene film includes for accommodating the container 2 of etching liquid, for sealing
Spring clip of the metallic substrates 7 with the sealing element of 2 contact surface of container and for clamping target substrate 5 Yu container 2；It is arranged on container 2
There is the clamped portion for the clamping of 4 one end of spring clip；The channel for etching liquid disengaging is provided on the wall of container 2；Container 2 is connected with
Device for exerting 1.
Device for exerting 1 can be air pressure or hydraulic-driven, for after splendid attire etching liquid pressurize so that etching liquid by
Pressure be greater than an atmospheric pressure so that after the completion of etching, graphene film to be transferred in metallic substrates 7 and target substrate 5
It is integrated, completes transfer.
Sealing element include be arranged in container 2 opening edge the first sealing ring 3 so that using when directly by container 2
It tips upside down in metallic substrates 7, and under the clamping of spring clip 4, the etching liquid of addition be will not flow out outside container 2, plays sealing and make
With.In addition sealing element can also be the groove including the second sealing ring and the opening edge that container 2 is arranged in, groove and second
Container 2, in application, first the second sealing ring is placed in metallic substrates 7, is then buckled to, so that second is close by sealing ring cooperation
Seal and the groove of the opening of container 2 edge fasten, and under the clamping of spring clip 4, realize sealing.
When using the present apparatus, there are the metallic substrates 7 of graphene film to be placed in target substrate 5 growth, so that metal
Graphene film 6 to be transferred is contacted with target substrate 5 in substrate 7.And on side of the metallic substrates 7 far from target substrate 5
Place sealing element and container 2.
Then container 2, metallic substrates 7 and target substrate 5 are clamped together with spring clip 4.It then will be with metallic substrates 7
Matched etching liquid is added in container 2 from from channel, then sealed passage or channel and contains the appearance of etching liquid to be added
Device 2 itself has formd sealing.It is then turned on device for exerting 1, so that it is applied a pressure to the etching liquid of addition, and continue one
Time, so that the pressure that etching liquid is subject to is greater than an atmospheric pressure, after metallic substrates 7 completely etching, the pressure that removal applies,
The etching liquid being added is removed, spring clip 4 is removed, takes out the target substrate 5 for completing transfer.Wherein, can use can for stress-relief process
Release is completed in the channel of opening and closing, or pressure relief opening to be opened/closed is in addition arranged on vessel 2.
When implementing, this programme is preferred, and the material of container 2 is stainless steel, and spring clip 4 includes left spring folder and right spring
Folder, facilitates clamping.
The present apparatus further includes the rigid substrate with burnishing surface for drop target substrate 5, and the other end of spring clip 4 is used
In clamping rigid substrate, graphene film is directly transferred in soft objectives substrate 5 by the present apparatus, expands this dress
The scope of application set.In use, first target substrate 5 flexible is placed in rigid substrate, in addition spring clip 4 needs to clamp
Firmly container 2, metallic substrates 7, target substrate 5 and rigid substrate, remaining step are same as above.
A kind of method using the above-mentioned direct transfer device transfer graphene film of graphene film is also provided comprising
Following steps:
A, there are the metallic substrates 7 of graphene film to be placed in target substrate 5 growth, and make graphene film and target
Substrate 5 contacts；
B, the quarter to match with metallic substrates 7 is added to isolating seal on side of the metallic substrates 7 far from target substrate 5
Lose liquid；
C, pressure is applied to the etching liquid of addition, and continues setting time；
D, the pressure that removal applies, removes the etching liquid of addition, and takes out the target substrate 5 for completing transfer.
When implementing, this programme is preferably performed the following steps before step a: target substrate 5 is placed on rigid substrate
Burnishing surface on, graphene film is directly transferred in target substrate 5 flexible by this method, to expand this method
The scope of application.
Claims (8)
1. the direct transfer device of graphene film, which is characterized in that including for accommodating etching liquid container (2), for sealing
Bullet of the metallic substrates (7) with the sealing element of the container (2) contact surface and for clamping target substrate (5) Yu the container (2)
Spring folder；The clamped portion for the clamping of the spring clip (4) one end is provided on the container (2)；It is set on the wall of the container (2)
It is equipped with the channel for etching liquid disengaging；The container (2) is connected with device for exerting (1).
2. the direct transfer device of graphene film according to claim 1, which is characterized in that the sealing element includes setting
The first sealing ring (3) in the opening edge of the container (2).
3. the direct transfer device of graphene film according to claim 1, which is characterized in that the sealing element includes second
In the groove of the opening edge of the container (2), the groove and second sealing ring cooperate for sealing ring and setting.
4. the direct transfer device of graphene film according to claim 1, which is characterized in that the material of the container (2)
For stainless steel.
5. the direct transfer device of graphene film according to claim 1, which is characterized in that the spring clip (4) includes
Left spring folder and right spring clip.
6. -5 any direct transfer device of graphene film according to claim 1, which is characterized in that further include for putting
The rigid substrate with burnishing surface of target substrate (5) is set, the other end of the spring clip (4) is for clamping the rigidity lining
Bottom.
7. a kind of side using the direct transfer device transfer graphene film of any graphene film of claim 1-6
Method, which comprises the steps of:
A, there are the metallic substrates (7) of graphene film to be placed on target substrate (5) growth, and make graphene film and target
Substrate (5) contact；
B, it is added and the Metal Substrate to isolating seal on the side of the metallic substrates (7) far from the target substrate (5)
The etching liquid that bottom (7) matches；
C, pressure is applied to the etching liquid of addition, and continues setting time；
D, the pressure that removal applies, removes the etching liquid of addition, and takes out the target substrate for completing transfer
(5)。
8. the method according to the description of claim 7 is characterized in that being performed the following steps before the step a: by the target
Substrate (5) is placed on the burnishing surface of rigid substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811366439.0A CN109179396A (en) | 2018-11-16 | 2018-11-16 | The direct transfer device of graphene film and method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109879277A (en) * | 2019-04-16 | 2019-06-14 | 电子科技大学 | A kind of graphene cleaning transfer method |
| CN110203915A (en) * | 2019-04-26 | 2019-09-06 | 成都昊石科技有限公司 | A kind of direct transfer device of CVD copper-base graphite alkene and method |
| WO2021056807A1 (en) * | 2019-09-25 | 2021-04-01 | 中国科学院微电子研究所 | Device and method for wet transferring of graphene thin film |
| CN114774919A (en) * | 2021-01-22 | 2022-07-22 | 四川伽锐科技有限公司 | Sealed cobalt removal device, reagent, method and application |
| CN114906842A (en) * | 2022-04-29 | 2022-08-16 | 遵义师范学院 | Graphene film transfer device and method for preventing graphene crystal lattice from being damaged |
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| CN109879277A (en) * | 2019-04-16 | 2019-06-14 | 电子科技大学 | A kind of graphene cleaning transfer method |
| CN110203915A (en) * | 2019-04-26 | 2019-09-06 | 成都昊石科技有限公司 | A kind of direct transfer device of CVD copper-base graphite alkene and method |
| WO2021056807A1 (en) * | 2019-09-25 | 2021-04-01 | 中国科学院微电子研究所 | Device and method for wet transferring of graphene thin film |
| CN114774919A (en) * | 2021-01-22 | 2022-07-22 | 四川伽锐科技有限公司 | Sealed cobalt removal device, reagent, method and application |
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| CN114906842B (en) * | 2022-04-29 | 2023-11-10 | 遵义师范学院 | Graphene film transfer device and method for preventing graphene lattice damage |
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