CN109161432A - A kind of carborundum line silicon chip cutting fluid and preparation method - Google Patents
A kind of carborundum line silicon chip cutting fluid and preparation method Download PDFInfo
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- CN109161432A CN109161432A CN201810755235.XA CN201810755235A CN109161432A CN 109161432 A CN109161432 A CN 109161432A CN 201810755235 A CN201810755235 A CN 201810755235A CN 109161432 A CN109161432 A CN 109161432A
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/02—Hydroxy compounds
- C10M2207/021—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2207/022—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms containing at least two hydroxy groups
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/10—Carboxylix acids; Neutral salts thereof
- C10M2207/12—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2207/125—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids
- C10M2207/126—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids monocarboxylic
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/105—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing three carbon atoms only
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
- C10M2215/02—Amines, e.g. polyalkylene polyamines; Quaternary amines
- C10M2215/04—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2215/042—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms containing hydroxy groups; Alkoxylated derivatives thereof
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/06—Oiliness; Film-strength; Anti-wear; Resistance to extreme pressure
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Abstract
The invention belongs to photovoltaic industry silicon crystal cutting technique field more particularly to a kind of carborundum line silicon chip cutting fluids.The component of carborundum line silicon chip cutting fluid includes hexylene glycol, 2,4,7,9- tetramethyl -5- decine -4,7- glycol, surfynol 465, propylene glycol block polyether P65, Dehypon LT104, isononanoic acid, isopropanolamine and deionized water, for carborundum line silicon chip cutting fluid of the invention fast with excellent lubrication, cooling, silicon powder sinking speed, carborundum line abrasion is small, preparation method simple process, condition are easily-controllable, low in cost, low for equipment requirements, are suitable for industrialized production.
Description
Technical field
The invention belongs to photovoltaic industry silicon crystal cutting technique field more particularly to a kind of carborundum line silicon chip cutting fluids.
Background technique
Photovoltaic industry is that more popular industry is applied in current research, belongs to new energy industry.Photovoltaic semiconductors silicon wafer is answered
It transports and the raw pillar industry for becoming cleaning solar energy, the Supply and demand market of silicon wafer is more burning hot.Slice is the weight of silicon wafer processing
The procedure wanted, while being also to cause silicon chip stress, surface layer and one of subsurface stratum damage and the master operation of chipping, silicon wafer is cut
Cut the production capacity that yield directly determines photovoltaic industry.And the performance of cutting liquid be the key that influence silicon wafer cutting efficiency and quality because
One of element.
Current silicon wafer cutting technique is mainly cut using free mortar cutting suspension and carborundum line, and boart boart
Wire cutting is a kind of more novel cutting technique, and China is still in infancy at present.The technique mainly utilizes outside sand line
The diamond that is coated with of layer is cut with silicon wafer friction, and cutting liquid does not need suspension and carbonation silicon particle, do not need to have yet compared with
High viscosity does not need to be mixed into silicon carbide blade material in the solution, and cutting speed is 2~3 times of steel wire in mortar cutting technique,
Piece rate is also higher than mortar cutting mode, and the water power of its consumption reduces 2/3rds than mortar cutting technique, produces after cutting
Raw silicon powder can all recycle use, therefore will substantially reduce in the depreciation of specific yield, artificial and energy cost, be both
It is energy saving and environmentally friendly.
Patent 105695076A and 105713714A belong to homologous series product, the more alkane for having used country to be forbidden to use
The surfactants such as base phenol polyethenoxy ether.Although the use of butadiene-styrene rubber accelerates the reunion of silicon powder in fact, bulky grain
Silicon powder, which is sticked to, also reduces the yield of silicon wafer cutting on carborundum line.
Patent CN102321497A discloses a kind of solar silicon wafers cutting liquid, including polyethylene glycol, surfactant, profit
Lubrication prescription, bleeding agent and chelating agent, also comprising the organic compound with sulfur-to-oxygen double bond.Although the patent better performances, belong to
Traditional free mortar cuts suspension, which has been in filtering technique at present.
Silicon chip surface TTV after presently commercially available silicon chip cutting fluid cutting is big, has stria, due to silicon wafer meeting in cutting process
Generation brittleness is burst apart or scratch, affects the roughness and angularity of silicon chip surface, so that the silicon wafer overall thickness processed exists
Error.
Carborundum line service life is short, and the additive that many silicon chip cutting fluids use now is of poor quality, after being unfavorable for cutting
Cleaning, so as to shorten the service life of carborundum line.
Chip silicon powder is carefully reacted with water very much due to granularity in silicon wafer cutting process can release hydrogen, prolonged production product
It is tired to generate security risk.
Compare traditional mortar suspension cutting technique and boart boart wire cutting technology, the gold that the latter's sand line outer layer is coated with
The frictional force that hard rock and silicon wafer friction generate is high more than mortar suspension, and when cutting generates moment stronger high temperature, cooling effect
Decline, silicon powder settleability are bad, and which results in the silicon chip surfaces after cutting can difficult cleaning of solid silicon fine powder, thus
Keep the decline of product smoothness, yield low.
Summary of the invention
Technical problem to be solved by the present invention lies in: under the premise of traditional mortar suspension cutting liquid is eliminated, mention
For a kind of cutting liquid of boart boart wire cutting silicon wafer, solution cutting speed is slow, and silicon powder settleability is poor, the low technology of silicon wafer yield
Problem.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of carborundum line silicon chip cutting fluid is provided,
Its component includes hexylene glycol, 2,4,7,9- tetramethyl -5- decine -4,7- glycol, surfynol 465, propylene glycol block polyether
P65, Dehypon LT104, isononanoic acid, isopropanolamine and deionized water.
Specifically, above-mentioned carborundum line silicon chip cutting fluid includes following each component according to parts by weight: hexylene glycol 8-
15 parts, 2-5 parts of 2,4,7,9- tetramethyl -5- decine -4,7- glycol, surfynol 465 0.1-0.5 part, propylene glycol block it is poly-
10-20 parts of ether P65,0.5-1 parts of Dehypon LT104,0.5-1 parts of isononanoic acid, 0.5-1 parts of isopropanolamine and deionized water
55-80 parts.
Further, carborundum line silicon chip cutting fluid includes that following each component is preferably: hexylene glycol according to parts by weight
10 parts, 3 parts of 2,4,7,9- tetramethyl -5- decine -4,7- glycol, 465 0.5 parts of surfynol, propylene glycol block polyether P65
15 parts, 0.5 part of Dehypon LT104,1 part of isononanoic acid, 1 part of isopropanolamine and 69 parts of deionized water.
Wherein, hexylene glycol has low-down surface tension (28.5mN/m), can significantly improve the wettability of product, make
Other components rapidly permeate into silicon chip surface, sharpen carborundum line.2,4,7,9- tetramethyl -5- decine -4,7- glycol has excellent
Wetability, defoaming, can quickly penetrate into silicon chip surface, form molecular film together between carborundum line and silicon wafer, significantly mention
High cutting speed.Surfynol 465 has unique bimolecular based structures, suitable for the foam inhibition wetting agent of aqueous systems, significantly
System of the present invention is improved to the dynamic moisture ability of various silicon wafers and carborundum line, static (0.1% matter low with dynamic surface tension
(25 DEG C) dynamic surface tension is 44.3mN/m, static surface tension 41.9mN/ to the Surfynol 465 of amount concentration in water
M), promote flowing levelling, reduce scuffing of the silicon powder to silicon wafer.And Miscibility is improved, and system viscosity is reduced, quickly take away
The silicon powder generated in cutting process is that silicon powder and cutting liquid are quickly separated by solid-liquid separation, and the performance of guarantee system does not fluctuate for a long time.Third
Diol block polyethers P65 has excellent lubricity, provides silicon wafer and cuts necessary lubrication, ties because its propylene glycol block polymerize
The polyethers P65 of structure, same viscosity grade has smaller coefficient of friction than mineral lubricating oil.Polarity based on polyethers and low viscous
Coefficient is pressed, the highly stable lubricating film with big adsorption capacity and bearing capacity can be formed in the case where silicon wafer cuts lubricating status, had
There are lower coefficient of friction and stronger anti-shear ability, and carborundum line will not be made to skid because of too cunning, scratches silicon wafer.
Dehypon LT104 is in cutting process, and because of the architectural characteristic of its butyl end-capping, stability during fly-cutting is much
Due to traditional EO-PO block surface activating agent, the foam of system is eliminated for a long time, supplements the lubricity of equilibrium system, eliminate
Scuffing of the foaming cavity to silicon wafer.Isononanoic acid and isopropanolamine are applied in combination, and not only provide certain lubricant effect, also have excellent
Good antirust function protects carborundum line and cutting machine from getting rusty.
The present invention also provides a kind of preparation methods of above-mentioned carborundum line silicon chip cutting fluid: by 2,4,7,9- tetramethyl-
5- decine -4,7- glycol, surfynol 465, propylene glycol block polyether P65, Dehypon LT104 are added in hexylene glycol
It stirs to obtain component A, isononanoic acid, isopropanolamine and deionized water is added to agitator tank and are uniformly mixing to obtain B group
Point, then component A is slowly added into B component, obtains translucent lotion to get carborundum line silicon chip cutting fluid is arrived.
The beneficial effects of the present invention are: carborundum line silicon chip cutting fluid of the invention, with excellent lubrication, cooling
The effects of, slice yield is high, and silicon wafer damage is few, carborundum line long service life, by the organic knot for passing through each raw material in formula
It closes, silicon wafer cutting speed is fast, and silicon wafer yield is high, and silicon chip surface silicon powder residual is few, and carborundum line abrasion is small.And the carborundum line silicon
Piece cutting liquid and preparation method thereof simple process, condition are easily-controllable, low in cost, low for equipment requirements, are suitable for industrialized production.
Specific embodiment
Embodiment 1
A kind of carborundum line silicon chip cutting fluid is in parts by weight following each component: 10 parts of hexylene glycol, 2,4,7,
3 parts of 9- tetramethyl -5- decine -4,7- glycol, 465 0.5 parts of surfynol, 15 parts of propylene glycol block polyether P65, Dehypon
LT1040.5 parts, 1 part of isononanoic acid, 1 part of isopropanolamine and 69 parts of deionized water.
Carborundum line silicon chip cutting fluid in the present embodiment the preparation method comprises the following steps:
By 2,4,7,9- tetramethyl -5- decine -4,7- glycol, surfynol 465, propylene glycol block polyether P65,
Dehypon LT104, which is added to, to be stirred to obtain component A in hexylene glycol, by isononanoic acid, isopropanolamine and deionization
Water is added to agitator tank and is uniformly mixing to obtain B component, and then component A is slowly added into B component, obtains translucent lotion,
Obtain carborundum line silicon chip cutting fluid.
Embodiment 2
A kind of carborundum line silicon chip cutting fluid is in parts by weight following each component:
8 parts of hexylene glycol, 2 parts of 2,4,7,9- tetramethyl -5- decine -4,7- glycol, 465 0.1 parts of surfynol, the third two
20 parts of alcohol block polyether P65,1 part of Dehypon LT104,0.5 part of isononanoic acid, 0.5 part of isopropanolamine and deionized water 67.9
Part.
Carborundum line silicon chip cutting fluid in the present embodiment the preparation method comprises the following steps:
By 2,4,7,9- tetramethyl -5- decine -4,7- glycol, surfynol 465, propylene glycol block polyether P65,
Dehypon LT104, which is added to, to be stirred to obtain component A in hexylene glycol, by isononanoic acid, isopropanolamine and deionization
Water is added to agitator tank and is uniformly mixing to obtain B component, and then component A is slowly added into B component, obtains translucent lotion,
Obtain carborundum line silicon chip cutting fluid.
Embodiment 3
15 parts of hexylene glycol, 5 parts of 2,4,7,9- tetramethyl -5- decine -4,7- glycol, 465 0.5 parts of surfynol, third
10 parts of diol block polyethers P65,0.5 part of Dehypon LT104,0.8 part of isononanoic acid, 0.8 part of isopropanolamine and deionized water
67.4 parts.
Carborundum line silicon chip cutting fluid in the present embodiment the preparation method comprises the following steps:
By 2,4,7,9- tetramethyl -5- decine -4,7- glycol, surfynol 465, propylene glycol block polyether P65,
Dehypon LT104, which is added to, to be stirred to obtain component A in hexylene glycol, by isononanoic acid, isopropanolamine and deionization
Water is added to agitator tank and is uniformly mixing to obtain B component, and then component A is slowly added into B component, obtains translucent lotion,
Obtain carborundum line silicon chip cutting fluid.
After the cutting liquid of the various embodiments described above is diluted 400 times with deionized water respectively, the silicon rod of same specification is carried out
Boart boart wire cutting, while imported from America UDM L200C solar silicon wafers cutting liquid (label A) is equally diluted with deionized water
After 400 times, boart boart wire cutting is carried out to the silicon rod of same specification, and produce using Liaoning AoKe Chemical Co., Ltd
Mortar suspension cutting liquid (label B) suspended cutting to the silicon rod of same specification using traditional mortar.Related experiment result such as table 1
It is shown:
Table 1, the embodiment of the present invention and comparative example cutting data test table
Obtained by table 1, the various aspects embodiment of the present invention will be better than traditional mortar suspension cutting liquid, each performance indicator with
Import carborundum line cutting liquid is suitable.
Finally, it should be noted that the above embodiments are only the preferred technical solution of the present invention, and be not construed as
Limitation of the invention, the features in the embodiments and the embodiments of the present application in the absence of conflict, can mutually any group
It closes.Protection scope of the present invention should be with the technical solution of claim record, skill in the technical solution recorded including claim
The equivalents of art feature are protection scope.Equivalent replacement i.e. within this range is improved, also in protection model of the invention
Within enclosing.
Claims (4)
1. a kind of carborundum line silicon chip cutting fluid, it is characterised in that: the component of the carborundum line silicon chip cutting fluid includes different
Hexylene glycol, 2,4,7,9- tetramethyl -5- decine -4,7- glycol, surfynol 465, propylene glycol block polyether P65, Dehypon
LT104, isononanoic acid, isopropanolamine and deionized water.
2. carborundum line silicon chip cutting fluid as described in claim 1, it is characterised in that: the carborundum line silicon chip cutting fluid
It according to parts by weight include following each component: 8-15 parts of hexylene glycol, 2,4,7,9- tetramethyl -5- decine -4,7- glycol 2-5
It is part, surfynol 465 0.1-0.5 part, 10-20 parts of propylene glycol block polyether P65,0.5-1 parts of Dehypon LT104, different
0.5-1 parts of n-nonanoic acid, 0.5-1 parts of isopropanolamine and 55-80 parts of deionized water.
3. the carborundum line silicon chip cutting fluid according to claim 2, it is characterised in that: the carborundum line silicon
Piece cutting liquid includes that following each component is preferably according to parts by weight: 10 parts of hexylene glycol, 2,4,7,9- tetramethyl -5- decine -
It is 3 parts of 4,7- glycol, 465 0.5 parts of surfynol, 15 parts of propylene glycol block polyether P65,0.5 part of Dehypon LT104, different
1 part of n-nonanoic acid, 1 part of isopropanolamine and 69 parts of deionized water.
4. the preparation method of carborundum line silicon chip cutting fluid as described in any one of claims 1-3, it is characterised in that: the system
Preparation Method are as follows: by 2,4,7,9- tetramethyl -5- decine -4,7- glycol, surfynol 465, propylene glycol block polyether P65,
Dehypon LT104, which is added to, to be stirred to obtain component A in hexylene glycol；
Isononanoic acid, isopropanolamine and deionized water are added to agitator tank and are uniformly mixing to obtain B component；
Then component A is slowly added into B component, obtains translucent lotion to get carborundum line silicon chip cutting fluid is arrived.
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Cited By (1)
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