CN106957710B - Solar silicon wafer cutting fluid based on shear thickening mechanism and preparation method thereof - Google Patents
Solar silicon wafer cutting fluid based on shear thickening mechanism and preparation method thereof Download PDFInfo
- Publication number
- CN106957710B CN106957710B CN201710306358.0A CN201710306358A CN106957710B CN 106957710 B CN106957710 B CN 106957710B CN 201710306358 A CN201710306358 A CN 201710306358A CN 106957710 B CN106957710 B CN 106957710B
- Authority
- CN
- China
- Prior art keywords
- cutting fluid
- silicon wafer
- shear thickening
- wafer cutting
- silicon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M169/00—Lubricating compositions characterised by containing as components a mixture of at least two types of ingredient selected from base-materials, thickeners or additives, covered by the preceding groups, each of these compounds being essential
- C10M169/02—Mixtures of base-materials and thickeners
Abstract
The invention provides a solar silicon wafer cutting fluid based on a shear thickening mechanism, which consists of micro/nano silicon dioxide particles, a dispersion medium and SiC powder, wherein the micro/nano silicon dioxide particles are dissolved in the dispersion medium in a certain part to form the cutting fluid with the shear thickening effect. The preparation method mainly comprises the following steps: dissolving the micro/nano particles in a pretreatment dispersion medium to obtain a premixed solution; further dispersing the premixed solution in a dispersion medium to obtain a micro/nano silicon dioxide dispersion system; and adding the SiC powder into a dispersion system to obtain the novel shear thickening solar silicon wafer cutting fluid. Compared with the existing solar polycrystalline silicon wafer cutting fluid, the cutting fluid has better dispersity, stability and shear thickening performance, and meanwhile, the cutting cost is lower, and the cutting surface quality is better. The preparation process of the solar silicon wafer cutting fluid based on the shear thickening mechanism is simple, convenient to operate and easy to realize industrial production.
Description
Technical Field
The invention relates to the technical field of micro-nano powder application, in particular to solar silicon wafer cutting fluid based on a shear thickening mechanism and a preparation method thereof.
Background
In recent years, with the enhancement of environmental awareness, solar energy has been widely used as a green resource. The silicon-based material is the main material of solar photovoltaic and accounts for more than 85% of the photovoltaic cells in the world. Silicon wafers are important as front-end products in the photovoltaic industry in the entire industry chain. At present, the silicon wafer processing mainly adopts a multi-line cutting mode, namely, thousands of straight steel wires drive abrasive materials and cutting fluid to reach a cutting area, and the abrasive materials cut silicon ingots in modes of inlaying, scratching or rolling and the like under the driving of high-speed movement of the straight steel wires, so that the purpose of rapid processing is realized.
In order to increase the cutting rate, it is desirable that the abrasive material be carried into the cutting kerfs by the wire as much as possible and that the cutting force transmitted by the wire to the abrasive material be maximized. Therefore, the traditional mortar cutting is improved mainly in the following ways. Firstly, diamond replaces the traditional silicon carbide (SiC) and is fixed on a straight steel wire for reciprocating cutting, namely fixed abrasive diamond wire cutting; secondly, the deformed steel wire is used for replacing a straight steel wire, and more free silicon carbide is carried for cutting, namely, structural wire cutting; thirdly, chemicals are added into the original cutting fluid polyethylene glycol (PEG), so that the suspension performance of SiC is improved, namely the cutting of the chemical additives.
Such as the upper cutting method, each has advantages and disadvantages. Although diamond wire cutting can improve the cutting force and the utilization rate of diamonds, the diamond wire cutting method has the advantages of high cutting speed, high cutting precision, low material loss and the like, and manufacturers have a tendency of gradually transiting to diamond wire cutting, the diamond wire cutting method still has the problems of high cost (the cost of sand wire liquid is about 1.5 times of that of free mortar cutting), difficulty in welding after wire breakage in the cutting process, low processing yield, difficulty in texturing of cut polycrystalline silicon slices in the subsequent process of batteries and the like. Although the amount of free mortar for cutting (about 75% of the amount of normal mortar) can be greatly reduced in structural wire cutting, the cutting speed is high, and a few manufacturers use the structural wires in batches, the structural wire cutting has the problems of high steel wire cost (about 1.3 times of that of a normal straight steel wire), difficulty in welding after wire breakage in the cutting process, low processing yield and the like. The chemical additive cutting is only tried in a few manufacturers at present, the cutting improvement effect needs further demonstration and inspection, the preparation process of the chemical reagent is complex, the chemical reagent is not suitable for mass production, the content of the chemical reagent remained on the surface of the recovered SiC can not be effectively controlled, and the risk of generating adverse effect on the cutting exists.
Therefore, in order to further reduce the cutting cost of the silicon wafer and the cutting risk caused by wire breakage, chemical attachment and the like, a new material is urgently needed to be used under the condition that the shape of the straight steel wire is not changed, so that the apparent viscosity of the mortar containing the SiC free abrasive material is rapidly increased under the driving of the high-speed shearing force of the straight steel wire, even the mortar is converted from a liquid phase to a solid phase, namely SiC abrasive particles are attached to the surface of the straight steel wire to form a structure similar to a consolidated abrasive material, the utilization rate and the cutting force of the SiC are improved, the mortar can be restored to a liquid state again under the action of no high-speed shearing force after passing through the cutting surface, and the apparent viscosity is restored to a normal level, so that the SiC is uniformly dispersed in the cutting fluid. Such liquids capable of a sharp increase and decrease in viscosity with a change in shear rate are referred to as shear thickening liquids. The shear thickening effect is a non-newtonian fluid behavior, the change of which is reversible.
In conclusion, if the nano material is added into the traditional cutting mortar consisting of SiC and PEG, the novel cutting mortar with low apparent viscosity at low shear rate and sharply increased apparent viscosity at high shear rate can be formed, so that more SiC abrasive particles are adhered to the surface of a straight steel wire in the cutting process, the utilization rate and the cutting force of SiC are improved, the cutting rate is improved, the mortar dosage is reduced, and the cutting cost is greatly reduced.
Disclosure of Invention
Aiming at the problems of low multi-wire cutting speed, poor cutting quality, high cutting cost of a structural wire and a diamond wire, difficulty in quality control and the like of the conventional straight steel wire, the invention provides the solar polycrystalline silicon wafer cutting fluid based on the non-Newtonian fluid shear thickening mechanism and the preparation method thereof, wherein the solar polycrystalline silicon wafer cutting fluid has the advantages of strong cutting capability, high efficiency, low cost and simple preparation mode.
In order to achieve the purpose, the invention adopts the following technical scheme:
a solar silicon wafer cutting fluid based on a shear thickening mechanism comprises a dispersion medium, SiC powder and nano silicon dioxide particles.
A preparation method of solar silicon wafer cutting fluid based on a shear thickening mechanism comprises the following steps:
step 1: dissolving nano silicon dioxide particles in a pretreatment dispersion medium, wherein the mass ratio of the nano silicon dioxide particles to the pretreatment dispersion medium is 1: 50-60, stirring for 30-60 min under the condition of 800-1000 r/min to obtain a nano silicon dioxide solution;
step 2: weighing 0.3-0.6 part by weight of the nano silicon dioxide solution pretreated in the step 1, adding the nano silicon dioxide solution into 0.7-0.4 part by weight of a dispersion medium, stirring for 30-60 min under the condition of 800-1000 r/min, and then ultrasonically dispersing for 30-60 min under 200W power by using an ultrasonic cleaner to obtain a nano silicon dioxide dispersion system;
and step 3: and (3) taking the nano silicon dioxide dispersion system prepared in the step (2), adding 0.3-0.7 part by weight of SiC powder into the system under the condition of continuous stirring, and continuously stirring after the addition is finished to obtain the solar silicon wafer cutting fluid.
Preferably, the particle size of the nano silicon dioxide particles is 10 nm-1000 nm.
More preferably, the particle size of the nano silicon dioxide particles is 50nm-500 nm.
Preferably, the pretreatment dispersion medium in the step 1 is one or more of hydroxyl silicone oil, ethanol, polyethylene glycol, diethylene glycol, propylene glycol and glycerol.
More preferably, the polyethylene glycol is one or more of PEG200, PEG300, PEG400, PEG500 and PEG 600.
Preferably, the dispersion medium in step 2 is polyethylene glycol.
More preferably, the polyethylene glycol is one or more of PEG200, PEG300, PEG400, PEG500 and PEG 600.
More preferably, the hydroxyl silicone oil is hydroxyl-terminated polysiloxane, and the viscosity is 10-100 mPas.
The invention has the beneficial effects that:
1. the apparent viscosity is low at a low stirring speed of a slurry cylinder, the stirring, flowing, spraying and the like of cutting fluid in a slicing machine are not influenced, and the apparent viscosity is sharply increased at a high shearing rate, namely when a straight steel wire carries the cutting fluid to enter a cutting saw slot at a speed of 10-15 m/s, so that more SiC abrasive particles are adhered to the surface of the straight steel wire in the cutting process, the utilization rate and the cutting capability of SiC are improved, the cutting rate is improved, the mortar consumption is reduced, and the cutting cost is greatly reduced;
2. compared with the existing solar polycrystalline silicon wafer cutting fluid, the cutting fluid has better dispersibility, stability and shear thickening performance, and meanwhile, the cutting cost is lower, and the cutting surface quality is better;
3. the preparation process is simple, the operation is convenient, and the industrial production is easy to realize.
Drawings
FIG. 1 shows the relationship between the storage modulus G 'and the loss modulus G' with respect to the shear frequency.
Detailed Description
The invention provides a solar silicon wafer cutting fluid based on a shear thickening mechanism, which consists of micro/nano silicon dioxide particles, a dispersion medium and SiC powder, wherein the micro/nano silicon dioxide particles are dissolved in the dispersion medium in a certain part to form the cutting fluid with the shear thickening effect. The preparation method comprises the following steps:
1. pretreatment of micro/nano silicon dioxide: dissolving a certain amount of micro/nano particles in a pretreatment dispersion medium, wherein the mass ratio of micro/nano silicon dioxide to the pretreatment dispersion medium is 1: 50-60, stirring for 30-60 min under the condition of 800-1000 r/min;
2. preparation of micro/nano silica dispersion: weighing 0.3-0.6 part by weight of the micro/nano silicon dioxide solution pretreated in the step 1, adding the micro/nano silicon dioxide solution into 0.7-0.4 part by weight of a dispersion medium, stirring for 30-60 min under the condition of 800-1000 r/min, and then ultrasonically dispersing for 30-60 min under 200W power by using an ultrasonic cleaner to obtain a micro/nano silicon dioxide dispersion system;
3. preparing novel shear thickening solar silicon wafer cutting fluid: and (3) taking the dispersion system prepared in the step (2), adding 0.3-0.7 part by weight of SiC powder into the system under the condition of continuous stirring, and continuing to mechanically stir for 2 hours after the addition is finished to obtain the novel shear thickening solar silicon wafer cutting fluid.
The particle size of the micro/nano silicon dioxide is 10 nm-1000 nm; preferably between 50nm and 500 nm;
the pretreatment dispersion medium described in step 1 comprises: one or more of hydroxyl silicone oil, ethanol, polyethylene glycol, diethylene glycol, propylene glycol and glycerol; preferably a hydroxy silicone oil;
the dispersion medium in the step 2 is polyethylene glycol;
the polyethylene glycol is selected from one or more of PEG200, PEG300, PEG400, PEG500 and PEG 600; preferably PEG200, PEG 300;
the hydroxyl silicone oil is selected from hydroxyl-terminated polysiloxane, and the viscosity is 10-100 mPas.
The invention is further illustrated by the following specific but non-limiting examples.
Example 1:
respectively adding 250ml of hydroxyl silicone oil into 250ml of ethylene glycol, and uniformly stirring in a 3L container; taking 10 g of nano silicon dioxide particles, adding the nano silicon dioxide particles into the dispersion medium, and stirring for 60min under the condition of 950 r/min; after being dispersed evenly, 500ml of PEG200 is added and stirred for 40min under the condition of 800 r/min; then ultrasonically dispersing for 30min under 200W power by using an ultrasonic cleaner to obtain a silicon dioxide dispersion system; adding 600 g of SiC powder with the particle size D50 of 10um into the system under the condition of continuous stirring, and continuing mechanically stirring for 2h after the addition is finished to obtain the novel shear thickening solar silicon wafer cutting fluid.
It can be seen from figure 1 that the cutting fluid has good shear thickening properties.
Example 2:
according to the preparation method and conditions of example 1, the cutting fluid with silicon carbide dispersed in the silicon dioxide dispersion system can also be obtained by using diethylene glycol and PEG 300;
example 3:
according to the preparation method and conditions of example 1, the silicon dioxide dispersion system cutting fluid with high solid content can be obtained by changing the proportion of the SiC powder.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (8)
1. A preparation method of solar silicon wafer cutting fluid based on a shear thickening mechanism is characterized by comprising the following steps:
step 1: dissolving nano silicon dioxide particles in a pretreatment dispersion medium, wherein the mass ratio of the nano silicon dioxide particles to the pretreatment dispersion medium is 1: 50-60, stirring for 30-60 min under the condition of 800-1000 r/min to obtain a nano silicon dioxide solution;
step 2: weighing 0.3-0.6 part by weight of the nano silicon dioxide solution pretreated in the step 1, adding the nano silicon dioxide solution into 0.7-0.4 part by weight of a dispersion medium, stirring for 30-60 min under the condition of 800-1000 r/min, and then ultrasonically dispersing for 30-60 min under 200W power by using an ultrasonic cleaner to obtain a nano silicon dioxide dispersion system;
and step 3: and (3) taking the nano silicon dioxide dispersion system prepared in the step (2), adding 0.3-0.7 part by weight of SiC powder into the system under the condition of continuous stirring, and continuously stirring after the addition is finished to obtain the solar silicon wafer cutting fluid.
2. The method for preparing the solar silicon wafer cutting fluid based on the shear thickening mechanism according to claim 1, wherein the nano silica particles have a particle size of 10nm to 1000 nm.
3. The method for preparing the solar silicon wafer cutting fluid based on the shear thickening mechanism according to claim 1, wherein the nano silica particles have a particle size of 50nm to 500 nm.
4. The method for preparing the solar silicon wafer cutting fluid based on the shear thickening mechanism according to claim 1, wherein the pretreatment dispersion medium in the step 1 is one or more of hydroxy silicone oil, ethanol, polyethylene glycol, diethylene glycol, propylene glycol and glycerol.
5. The method for preparing the solar silicon wafer cutting fluid based on the shear thickening mechanism according to claim 4, wherein the polyethylene glycol is one or more of PEG200, PEG300, PEG400, PEG500 and PEG 600.
6. The method for preparing the solar silicon wafer cutting fluid based on the shear thickening mechanism according to claim 1, wherein the dispersion medium in the step 2 is polyethylene glycol.
7. The method for preparing the solar silicon wafer cutting fluid based on the shear thickening mechanism according to claim 6, wherein the polyethylene glycol is one or more of PEG200, PEG300, PEG400, PEG500 and PEG 600.
8. The preparation method of the solar silicon wafer cutting fluid based on the shear thickening mechanism according to claim 4, wherein the hydroxyl silicone oil is hydroxyl terminated polysiloxane with viscosity of 10-100 mPas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710306358.0A CN106957710B (en) | 2017-05-04 | 2017-05-04 | Solar silicon wafer cutting fluid based on shear thickening mechanism and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710306358.0A CN106957710B (en) | 2017-05-04 | 2017-05-04 | Solar silicon wafer cutting fluid based on shear thickening mechanism and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106957710A CN106957710A (en) | 2017-07-18 |
| CN106957710B true CN106957710B (en) | 2020-03-31 |
Family
ID=59481932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710306358.0A Active CN106957710B (en) | 2017-05-04 | 2017-05-04 | Solar silicon wafer cutting fluid based on shear thickening mechanism and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106957710B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108178987B (en) * | 2018-01-18 | 2022-07-01 | 上海彤程电子材料有限公司 | Polishing solution and preparation method thereof |
| CN111910436B (en) * | 2020-07-16 | 2021-11-12 | 北京理工大学 | Shear thickening protective liquid and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102212412A (en) * | 2011-05-10 | 2011-10-12 | 天津理工大学 | Water-based cutting fluid with grinding materials treated by surfactant and preparation method thereof |
| CN102433191A (en) * | 2011-10-24 | 2012-05-02 | 江西赛维Ldk太阳能高科技有限公司 | Silicon carbide cutting fluid and using method thereof |
| CN103409222A (en) * | 2013-08-08 | 2013-11-27 | 陕西省石油化工研究设计院 | Low-viscosity grinding cutting fluid |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8734751B2 (en) * | 2011-06-12 | 2014-05-27 | Taiwan Water Recycle Technology Co., Ltd. | Method and apparatus for recycling and treating wastes of silicon wafer cutting and polishing processes |
-
2017
- 2017-05-04 CN CN201710306358.0A patent/CN106957710B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102212412A (en) * | 2011-05-10 | 2011-10-12 | 天津理工大学 | Water-based cutting fluid with grinding materials treated by surfactant and preparation method thereof |
| CN102433191A (en) * | 2011-10-24 | 2012-05-02 | 江西赛维Ldk太阳能高科技有限公司 | Silicon carbide cutting fluid and using method thereof |
| CN103409222A (en) * | 2013-08-08 | 2013-11-27 | 陕西省石油化工研究设计院 | Low-viscosity grinding cutting fluid |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106957710A (en) | 2017-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108559602B (en) | Water-based diamond wire silicon wafer cutting fluid | |
| CN102618376B (en) | Diamond abrasive wire cutting fluid for semiconductor precision sheet and preparation method of diamond abrasive wire cutting fluid | |
| CN104031560B (en) | For the water-based diamond polishing liquid of crystal pro cessing | |
| JP6001858B2 (en) | Slurry composition containing nonionic polymer and method of using the same | |
| CN102775915B (en) | Silicon wafer fine polishing combined solution capable of inhibiting particle deposition and preparation method thereof | |
| CN103525532B (en) | A kind of carborundum line cutting liquid and preparation method thereof | |
| CN106957710B (en) | Solar silicon wafer cutting fluid based on shear thickening mechanism and preparation method thereof | |
| CN105385357A (en) | Polishing solution for A orientation sapphire polishing, and preparation method thereof | |
| CN102212333B (en) | Fine grinding fluid for sapphire substrate and preparation method thereof | |
| CN105647475A (en) | Water-soluble and oil-soluble diamond grinding liquid and preparation method thereof | |
| CN102796460A (en) | Silicon dioxide-based CMP (Chemical Mechanical Polishing) solution and preparation method thereof | |
| CN104342273A (en) | Cooling liquid for cutting polycrystalline silicon chip employing diamond wire | |
| CN108034360A (en) | A kind of CMP planarization liquid and its application in GaAs wafer polishings | |
| CN111515874A (en) | Efficient ultra-precision polishing method based on shear expansion effect | |
| CN112111230A (en) | Hard alloy polishing slurry of mixed abrasive and preparation method thereof | |
| CN105524558A (en) | Polishing solution additive and preparation method thereof | |
| CN103695149B (en) | A kind of silicon chip cutting fluid | |
| CN108017998A (en) | A kind of preparation method of CMP planarization liquid | |
| CN114231251A (en) | Diamond grinding fluid for coarse grinding of silicon carbide wafer and preparation method thereof | |
| CN102516874A (en) | Polishing liquid for ultra-precision sharpening of diamond cutting tool and preparation method thereof | |
| CN104493988B (en) | A kind of high viscosity mortar cutting technique for silicon chip cutting | |
| CN102766408B (en) | Silicon wafer refined polishing composition liquid applicable to low pressure and preparation method thereof | |
| CN109160508A (en) | graphene slurry and preparation method thereof | |
| CN103639063B (en) | A kind of silicon carbide micro-powder reclaims medicament | |
| CN102784977A (en) | Silicon crystal line cutting fluid |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |