CN109148609A - A kind of gallium arsenide solar cell with anti-reflection layer - Google Patents
A kind of gallium arsenide solar cell with anti-reflection layer Download PDFInfo
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- CN109148609A CN109148609A CN201710498727.0A CN201710498727A CN109148609A CN 109148609 A CN109148609 A CN 109148609A CN 201710498727 A CN201710498727 A CN 201710498727A CN 109148609 A CN109148609 A CN 109148609A
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- layer
- gallium arsenide
- solar cell
- reflection layer
- reflection
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 76
- 230000005684 electric field Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims abstract description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000005083 Zinc sulfide Substances 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 5
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000004943 liquid phase epitaxy Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of gallium arsenide solar cell with anti-reflection layer, the gallium arsenide solar cell successively includes: gallium arsenide substrate；Back electric field layer in gallium arsenide substrate；GaAs p-n junction on back electric field layer, the GaAs p-n junction includes the N-shaped gallium arsenide layer and p-type gallium arsenide layer being stacked；Aluminum gallium arsenide Window layer on GaAs p-n junction；Contact electrode layer in aluminum gallium arsenide Window layer；Anti-reflection layer on contact electrode layer；And several electrodes on contact electrode layer.By the way that anti-reflection structure is added in the present invention, the light of reflection can be substantially reduced, the photoelectric conversion efficiency of solar battery is improved.
Description
Technical field
The invention belongs to photovoltaic technology field, more particularly to a kind of gallium arsenide solar cell with anti-reflection layer.
Background technique
The development of gallium arsenide solar cell is that have more than 50 years so far and go through since the fifties in last century
History.Discovery GaAs material has photovoltaic effect for the first time in the world within 1954, and in 1956, LoferskiJ.J. and his team were visited
The physical property of the optimal material of manufacture solar cell is begged for, it is highest that they point out that material of the Eg within the scope of 1.2~1.6eV has
Transfer efficiency.In the 1960s, Gobat etc., which has developed the 1st, mixes zinc GaAs solar cell, but conversion ratio is not high, only
9%~10%, the theoretical value far below 27%.In the 1970s, IBM Corporation and former Soviet Union's Ioffe technology physics wait as representative
Research unit, using LPE (liquid phase epitaxy) technology introduce the heterogeneous Window layer of GaAlAs, reduce the compound speed on the surface GaAs
Rate makes the efficiency of GaAs solar cell up to 16%.Soon, the HRL and Spectrolab in the U.S. are made by improving LPE technology
The average efficiency of battery reaches 18%, and realizes batch production, has started the new era of high efficiency gallium arsenide solar cell.From
After the eighties in last century, GaAs solar cell technology be experienced from LPE to MOCVD, from homoepitaxy to hetero-epitaxy, from unijunction
To several developing stage of more knot laminated construction, development speed is increasingly accelerated, and efficiency is also continuously improved, at present laboratory highest
Efficiency has reached 50%, and industry produces conversion ratio up to 30% or more.
But in gallium arsenide solar cell, quite a few light is had since the reflection of sunlight cannot be introduced into absorbed layer
In, leverage the photoelectric conversion efficiency of gallium arsenide solar cell.
Therefore, in view of the above-mentioned problems, it is necessary to propose a kind of gallium arsenide solar cell with anti-reflection layer.
Summary of the invention
In view of this, the present invention provides a kind of gallium arsenide solar cells with anti-reflection layer.
In order to achieve the above-mentioned object of the invention, the present invention provides a kind of gallium arsenide solar cell with anti-reflection layer, should
Gallium arsenide solar cell successively includes:
Gallium arsenide substrate；
Back electric field layer in gallium arsenide substrate；
GaAs p-n junction on back electric field layer, GaAs p-n junction includes the N-shaped gallium arsenide layer and p-type arsenic being stacked
Gallium layer；
Aluminum gallium arsenide Window layer on GaAs p-n junction；
Contact electrode layer in aluminum gallium arsenide Window layer；
Anti-reflection layer on contact electrode layer；
And several electrodes on contact electrode layer.
As a further improvement of the present invention, the anti-reflection layer includes the first anti-reflection layer and the second anti-reflection layer, institute
The first anti-reflection layer position magnesium fluoride layer is stated, the second anti-reflection layer is zinc sulfide layer.
As a further improvement of the present invention, first anti-reflection layer with a thickness of 30 ~ 50nm, the second anti-reflection layer
With a thickness of 50 ~ 100nm.
As a further improvement of the present invention, gaas buffer is formed between the gallium arsenide substrate and back electric field layer
Layer.
As a further improvement of the present invention, the GaAs buffer layer includes CT GaAs buffer layer and high temperature arsenic
Gallium buffer layer.
As a further improvement of the present invention, the CT GaAs buffer layer with a thickness of 10 ~ 50nm, high temperature GaAs
Buffer layer with a thickness of 50 ~ 100nm.
As a further improvement of the present invention, the N-shaped gallium arsenide layer with a thickness of 1 ~ 10 μm, the thickness of p-type gallium arsenide layer
Degree is 100 ~ 500nm.
Compared with prior art, the beneficial effects of the present invention are:
By the way that the double-deck anti-reflection structure of magnesium fluoride layer and zinc sulfide layer is added in the present invention, the light of reflection can be substantially reduced
Line improves the photoelectric conversion efficiency of solar battery.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The some embodiments recorded in invention, for those of ordinary skill in the art, without creative efforts,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural representation of the gallium arsenide solar cell in the embodiment of the invention with anti-reflection layer
Figure.
Specific embodiment
Below by a detailed description of the technical solution in the embodiment of the present invention is provided, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
To join shown in Fig. 1, one of embodiment of the invention has the gallium arsenide solar cell of anti-reflection layer,
The gallium arsenide solar cell successively includes:
Gallium arsenide substrate 10；
Back electric field layer 20 in gallium arsenide substrate；
GaAs p-n junction on back electric field layer, GaAs p-n junction includes the N-shaped gallium arsenide layer 31 and p-type arsenic being stacked
Change gallium layer 32；
Aluminum gallium arsenide Window layer 40 on GaAs p-n junction；
Contact electrode layer 50 in aluminum gallium arsenide Window layer；
Anti-reflection layer on contact electrode layer；
And several electrodes 70 on contact electrode layer.
Wherein, anti-reflection layer includes the first anti-reflection layer 61 and the second anti-reflection layer 62, the first anti-reflection layer position magnesium fluoride
Layer, the second anti-reflection layer are zinc sulfide layer.Preferably, the first anti-reflection layer 61 with a thickness of 30 ~ 50nm, the second anti-reflection layer 62
With a thickness of 50 ~ 100nm.
Further, GaAs buffer layer, arsenic are formed between gallium arsenide substrate and back electric field layer in present embodiment
Gallium buffer layer includes CT GaAs buffer layer 81 and high temperature GaAs buffer layer 82.Preferably, CT GaAs buffer layer
With a thickness of 10 ~ 50nm, be prepared under the conditions of 500 DEG C~550 DEG C, high temperature GaAs buffer layer with a thickness of 50 ~
100nm is prepared under the conditions of 650 DEG C~710 DEG C.
Back electric field layer in the present invention can be avoided carrier caused by solar-electricity bottom of pond portion and expand toward incorrect direction
It dissipates, can have carrier on the p-n junction of light absorbing layer, and then improve the collection efficiency of carrier.In addition, back electric field
The use of layer can increase spectral response of the solar battery to infrared region, and reduce the combined efficiency of carrier.
As can be seen from the above technical solutions, in gallium arsenide solar cell of the invention, due to the anaclasis of GaAs
Rate is 3.6 or so, if not applicable anti-reflection layer, has a large amount of sunlight and reflected and cannot be introduced into absorbed layer, in the present invention
By the way that the double-deck anti-reflection structure of magnesium fluoride layer and zinc sulfide layer is added, the light of reflection can be substantially reduced, the sun is improved
The photoelectric conversion efficiency of energy battery.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the embodiments can also be closed suitably, and forming those skilled in the art can
With the other embodiments of understanding.
Claims (7)
1. a kind of gallium arsenide solar cell with anti-reflection layer, which is characterized in that the gallium arsenide solar cell is successively
Include:
Gallium arsenide substrate；
Back electric field layer in gallium arsenide substrate；
GaAs p-n junction on back electric field layer, the GaAs p-n junction includes the N-shaped gallium arsenide layer being stacked and p-type
Gallium arsenide layer；
Aluminum gallium arsenide Window layer on GaAs p-n junction；
Contact electrode layer in aluminum gallium arsenide Window layer；
Anti-reflection layer on contact electrode layer；
And several electrodes on contact electrode layer.
2. a kind of gallium arsenide solar cell with anti-reflection layer according to claim 1, which is characterized in that described anti-
Reflecting layer includes the first anti-reflection layer and the second anti-reflection layer, first anti-reflection layer position magnesium fluoride layer, the second anti-reflection layer
For zinc sulfide layer.
3. a kind of gallium arsenide solar cell with anti-reflection layer according to claim 2, which is characterized in that described
One anti-reflection layer with a thickness of 30 ~ 50nm, the second anti-reflection layer with a thickness of 50 ~ 100nm.
4. a kind of gallium arsenide solar cell with anti-reflection layer according to claim 1, which is characterized in that the arsenic
Change and is formed with GaAs buffer layer between gallium substrate and back electric field layer.
5. a kind of gallium arsenide solar cell with anti-reflection layer according to claim 4, which is characterized in that the arsenic
Changing gallium buffer layer includes CT GaAs buffer layer and high temperature GaAs buffer layer.
6. a kind of gallium arsenide solar cell with anti-reflection layer according to claim 5, which is characterized in that described low
Warm GaAs buffer layer with a thickness of 10 ~ 50nm, high temperature GaAs buffer layer with a thickness of 50 ~ 100nm.
7. a kind of gallium arsenide solar cell with anti-reflection layer according to claim 1, which is characterized in that the n
P type gallium arensidep layer with a thickness of 1 ~ 10 μm, p-type gallium arsenide layer with a thickness of 100 ~ 500nm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710498727.0A CN109148609A (en) | 2017-06-27 | 2017-06-27 | A kind of gallium arsenide solar cell with anti-reflection layer |
| PCT/CN2017/091447 WO2019000476A1 (en) | 2017-06-27 | 2017-07-03 | Gallium arsenide solar cell with anti-reflection layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710498727.0A CN109148609A (en) | 2017-06-27 | 2017-06-27 | A kind of gallium arsenide solar cell with anti-reflection layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109148609A true CN109148609A (en) | 2019-01-04 |
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ID=64742762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710498727.0A Withdrawn CN109148609A (en) | 2017-06-27 | 2017-06-27 | A kind of gallium arsenide solar cell with anti-reflection layer |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109148609A (en) |
| WO (1) | WO2019000476A1 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579380A (en) * | 2012-08-09 | 2014-02-12 | 索尼公司 | Light-receiving or light-emitting component, solar cell, optical sensor and LED |
| CN103165686B (en) * | 2013-02-28 | 2016-02-17 | 溧阳市生产力促进中心 | A kind of five-junction solar cell with antireflective coating |
| CN106784127B (en) * | 2015-11-20 | 2019-02-01 | 北京创昱科技有限公司 | A kind of binode Thinfilm solar cell assembly and preparation method thereof |
-
2017
- 2017-06-27 CN CN201710498727.0A patent/CN109148609A/en not_active Withdrawn
- 2017-07-03 WO PCT/CN2017/091447 patent/WO2019000476A1/en active Application Filing
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| Publication number | Publication date |
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| WO2019000476A1 (en) | 2019-01-03 |
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