CN109120286A - It is a kind of for minimizing the radio circuit of ODU transmission channel - Google Patents
It is a kind of for minimizing the radio circuit of ODU transmission channel Download PDFInfo
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- CN109120286A CN109120286A CN201811189746.6A CN201811189746A CN109120286A CN 109120286 A CN109120286 A CN 109120286A CN 201811189746 A CN201811189746 A CN 201811189746A CN 109120286 A CN109120286 A CN 109120286A
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- 230000010355 oscillation Effects 0.000 claims abstract description 9
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- 229910052751 metal Inorganic materials 0.000 claims description 76
- 230000003321 amplification Effects 0.000 claims description 17
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 17
- 238000003780 insertion Methods 0.000 claims description 10
- 230000037431 insertion Effects 0.000 claims description 10
- 230000002401 inhibitory effect Effects 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000004891 communication Methods 0.000 abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 49
- 239000010931 gold Substances 0.000 description 49
- 229910052737 gold Inorganic materials 0.000 description 49
- 239000003990 capacitor Substances 0.000 description 39
- 230000000087 stabilizing effect Effects 0.000 description 11
- 238000001914 filtration Methods 0.000 description 10
- 230000006835 compression Effects 0.000 description 6
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- 102220146689 rs12645938 Human genes 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B1/0475—Circuits with means for limiting noise, interference or distortion
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0491—Circuits with frequency synthesizers, frequency converters or modulators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a kind of for minimizing the radio circuit of ODU transmission channel, including the frequency mixer being sequentially connected in series, radio-frequency filter, radio frequency amplifier and cavity body filter, the frequency mixer includes the IF input terminal for inputting intermediate-freuqncy signal, input the local oscillator input terminal of local oscillation signal, and the RF output end of radiofrequency signal is exported after mixing, RF output end is electrically connected with the radio-frequency filter of clutter in radiofrequency signal is inhibited, the radio-frequency filter rear stage is electrically connected with the radio frequency amplifier for amplifying the radiofrequency signal, and the cavity body filter to carry out Out-of-band rejection to the radiofrequency signal is electrically connected after the radio frequency amplifier.Further disclose the composition of chip and interface network used in foregoing circuit.The circuit is applied to Satellite Communication Transmit channel, can be modified to radio frequency signal frequency, while having many advantages, such as that reliable and stable, saving power consumption, small volume, cost is relatively low.
Description
Technical field
The invention belongs to fields of communication technology, more particularly to a kind of radio frequency electrical suitable for minimizing ODU transmission channel
Road.
Background technique
In satellite communication equipment, ODU (Out-door Unit) refers to outdoor unit, mainly includes frequency transformation and function
Rate amplification, specific to be divided into transmission channel and receiving channel again, transmission channel typically refers to BUC (Block Up-
Converter), i.e., up-conversion radio-frequency power amplifier, receiving channel are primarily referred to as LNB (Low Noise Block down-
Converter), i.e. low noise amplification, frequency converter.
Radio circuit is usually required in transmission channel carries out frequency conversion, filtering and amplification, in miniaturized application, the radio frequency
Volume, the power consumption of circuit will be low, and the radiofrequency signal exported can have a good characteristic, such as to bandwidth of operation, defeated
The many indexes such as power, phase noise, spuious, frequency resolution will meet design requirement out.
Summary of the invention
The invention mainly solves the technical problem of providing a kind of for minimizing the radio circuit of ODU transmission channel, solves
Certainly volume is big in the prior art, circuit complicated composition, the component mostly big problem with power consumption.
In order to solve the above technical problems, the technical solution adopted by the present invention is that providing a kind of logical for minimizing ODU transmitting
The radio circuit in road, including frequency mixer, the frequency mixer include the IF input terminal for inputting intermediate-freuqncy signal, input local oscillation signal
The RF output end of radiofrequency signal is exported after local oscillator input terminal, and mixing, the RF output end electrical connection is for inhibiting
The radio-frequency filter of the intermodulation clutter in radiofrequency signal is stated, the rear stage of the radio-frequency filter is electrically connected for the radio frequency
The radio frequency amplifier that signal amplifies, the rear stage of the radio frequency amplifier be also electrically connected for the radiofrequency signal into
The cavity body filter of row Out-of-band rejection.
In radio circuit another embodiment of the present invention for minimizing ODU transmission channel, the radio-frequency filter packet
Include first order radio-frequency filter and second level radio-frequency filter.
In radio circuit another embodiment of the present invention for minimizing ODU transmission channel, the radio frequency amplifier packet
Include first order rf gain amplifier, second level rf gain amplifier and radio-frequency power amplifier, the frequency mixer it is described
After RF output end is electrically connected the first order radio-frequency filter, it is sequentially connected the first order rf gain amplifier, described
Second level radio-frequency filter, the second level rf gain amplifier and the radio-frequency power amplifier.
In radio circuit another embodiment of the present invention for minimizing ODU transmission channel, the radio frequency of the frequency mixer
Between output end and the first order radio-frequency filter, the first order radio-frequency filter and the first order rf gain amplify
Between device, between the first order rf gain amplifier and the second level radio-frequency filter and the second level radio frequency
Matched attenuator is serially connected between filter and the second level rf gain amplifier.
In radio circuit another embodiment of the present invention for minimizing ODU transmission channel, the first order radio frequency filter
Wave device and the second level radio-frequency filter are the identical microstrip filter of structure.
In radio circuit another embodiment of the present invention for minimizing ODU transmission channel, the microstrip filter packet
Include the U-shaped microwave metal tape being arranged on ceramic substrate, i.e. the first microwave metal tape to the 7th microwave metal tape, these microwaves
Metal tape is laterally sequentially arranged at intervals, opening direction is interspersed and is centrosymmetric centered on the first microwave metal tape,
In the first microwave metal tape opening upwards and be located at symmetrical centre, the second microwave metal tape and third microwave metal tape are opened
Mouthful downwards, it is located at the left and right side of the first microwave metal tape, the 4th microwave metal tape opening upwards and is located at institute
The left side of the second microwave metal tape, the 5th microwave metal tape opening upwards and the right side for being located at the third microwave metal tape are stated,
Open Side Down and is located at the left side of the 4th microwave metal tape for 6th microwave metal tape, a left side point for the 6th microwave metal tape
It being laterally extended in branch as first port, Open Side Down and is located at the right side of the 5th microwave metal tape for the 7th microwave metal tape,
It is laterally extended on the right branch of the 7th microwave metal tape as second port.
In radio circuit another embodiment of the present invention for minimizing ODU transmission channel, the frequency mixer includes core
Piece NC17104C-620, the frequency range of the intermediate-freuqncy signal are 950MHz-1700MHz, and the frequency of the local oscillation signal is
12.8GHz, the frequency range of the radiofrequency signal are 13.75GHz-14.5GHz, and the intermediate frequency of the chip NC17104C-620 is defeated
Enter end to be also electrically connected with matched attenuator and input the intermediate-freuqncy signal, the matched attenuator is chip TGL4201.
In radio circuit another embodiment of the present invention for minimizing ODU transmission channel, the first order radio frequency increases
Beneficial amplifier and second level rf gain amplifier include chip CHA3666.
In radio circuit another embodiment of the present invention for minimizing ODU transmission channel, the radio-frequency power amplification
Device includes chip TGA2533, and provides the power circuit of bipolar voltage power supply for the chip TGA2533.
In radio circuit another embodiment of the present invention for minimizing ODU transmission channel, the cavity body filter
Having a size of 50mm × 13.5mm × 8.73mm, band logical 13.75GHz-14.5GHz, with interior Insertion Loss≤0.5dB, passband fluctuation≤
±0.2dB。
The beneficial effects of the present invention are: the invention discloses a kind of for minimizing the radio circuit of ODU transmission channel, wrap
Frequency mixer is included, the frequency mixer includes the local oscillator input terminal of the IF input terminal for inputting intermediate-freuqncy signal, input local oscillation signal, and
The RF output end of radiofrequency signal is exported after mixing, the RF output end electrical connection is for inhibiting the friendship in the radiofrequency signal
The radio-frequency filter of clutter is adjusted, the rear stage electrical connection of the radio-frequency filter is penetrated for what is amplified to the radiofrequency signal
Audio amplifier is also electrically connected the cavity for carrying out Out-of-band rejection to the radiofrequency signal in the rear stage of the radio frequency amplifier
Filter.Further disclose the composition of chip and interface network used in foregoing circuit.The circuit is logical applied to satellite
Believe transmission channel, radio frequency signal frequency can be modified, while there is reliable and stable, saving power consumption, small volume, cost
The advantages that lower.
Detailed description of the invention
Fig. 1 is the present invention for minimizing the one embodiment composition schematic diagram of radio circuit of ODU transmission channel；
Fig. 2 is radio circuit composition frame in another embodiment of radio circuit of the present invention for minimizing ODU transmission channel
Figure；
Fig. 3 is microstrip filter signal in another embodiment of radio circuit of the present invention for minimizing ODU transmission channel
Figure；
Fig. 4 is radio circuit composition figure in another embodiment of radio circuit of the present invention for minimizing ODU transmission channel；
Fig. 5 is the mixer figure of radio circuit another embodiment of the present invention for minimizing ODU transmission channel；
Fig. 6 is the gain amplifier circuit of radio circuit another embodiment of the present invention for minimizing ODU transmission channel
Figure；
Fig. 7 is the radio-frequency power amplifier of radio circuit another embodiment of the present invention for minimizing ODU transmission channel
Circuit diagram；
Fig. 8 is the radio-frequency power amplifier of radio circuit another embodiment of the present invention for minimizing ODU transmission channel
Negative pressure circuit diagram；
Fig. 9 is the radio-frequency power amplifier of radio circuit another embodiment of the present invention for minimizing ODU transmission channel
6V output protection circuit figure.
Specific embodiment
To facilitate the understanding of the present invention, in the following with reference to the drawings and specific embodiments, the present invention will be described in more detail.
A better embodiment of the invention is given in the attached drawing.But the invention can be realized in many different forms, and unlimited
In this specification described embodiment.On the contrary, purpose of providing these embodiments is makes to the disclosure
Understand more thorough and comprehensive.
It should be noted that unless otherwise defined, all technical and scientific terms used in this specification with belong to
The normally understood meaning of those skilled in the art of the invention is identical.Used term in the description of the invention
It is the purpose in order to describe specific embodiment, is not intended to the limitation present invention.
With reference to the accompanying drawing, various embodiments of the present invention are described in detail.Fig. 1 is the present invention for minimizing ODU
The one embodiment composition schematic diagram of radio circuit of transmission channel.As shown in Figure 1, this is used to minimize the radio frequency of ODU transmission channel
Circuit includes frequency mixer 1, and the frequency mixer 1 includes the IF input terminal 11 of input intermediate-freuqncy signal, the local oscillator for inputting local oscillation signal
The RF output end 13 of radiofrequency signal is exported after input terminal 12, and mixing, the electrical connection of RF output end 13 is for inhibiting
The rear stage of the radio-frequency filter 2 of intermodulation clutter in the radiofrequency signal, the radio-frequency filter 2 is electrically connected for described
The radio frequency amplifier 3 that radiofrequency signal amplifies also is electrically connected in the rear stage of the radio frequency amplifier 3 for the radio frequency
The cavity body filter 4 of signal progress Out-of-band rejection.
Preferably, as shown in Fig. 2, the radio-frequency filter includes first order radio-frequency filter 21 and second level rf filtering
Device 22.Preferably, the radio frequency amplifier includes first order rf gain amplifier 31,32 and of second level rf gain amplifier
Radio-frequency power amplifier 33.
After the RF output end of the frequency mixer 1 is electrically connected the first order radio-frequency filter 21, it is sequentially connected institute
State first order rf gain amplifier 31, the second level radio-frequency filter 22,32 and of second level rf gain amplifier
The radio-frequency power amplifier 33.
Here provided with three-level rf filtering, wherein first order radio-frequency filter 21 is arranged after frequency mixer 1, effect
It is the first radio-frequency filter 21 is that bandpass filtering is carried out to the radiofrequency signal that obtains after mixing, the intermodulation product after inhibiting mixing,
Second radio-frequency filter 22 is arranged after the first rf gain amplifier 31, mainly amplifies to gain issuable non-thread
Property distortion and caused by clutter ingredient carry out inhibition filtering, overcome gain amplification bring frequency content change, inhibit gain
The power for amplifying synchronous bring out of band signal increases.And the mesh of cavity body filter 4 is set after radio-frequency power amplifier 23
Be then as far as possible reduce insertion loss under the premise of, obtain biggish Out-of-band rejection.Preferably, cavity body filter here
In-band insertion loss≤0.5dB, and the first radio-frequency filter 21 and the second radio-frequency filter 22 are preferably microstrip filter, usually
There is the insertion loss of 6dB.
Further, it is serially connected between the RF output end of the frequency mixer 1 and the first order radio-frequency filter 21
With attenuator 201, it is serially connected with and matches between the first order radio-frequency filter 21 and the first order rf gain amplifier 31
Attenuator 202 is serially connected with matching between the first order rf gain amplifier 31 and the second level radio-frequency filter 22 and declines
Subtract to be serially connected between device 203 and the second level radio-frequency filter 22 and the second level rf gain amplifier 32 and match
Attenuator 204.
By the way that these matched attenuators are arranged, on the one hand enable to the radio-frequency devices of front and back that can guarantee phase in cascade
Mutually between impedance matching, prevent radiofrequency signal when transmitting in channel as impedance mismatch and caused by signal reversely return
On the other hand stream also can adapt to when first order rf gain amplifier, second level rf gain amplifier are to the radio frequency of input
When signal power has upper limit requirement, the RF signal power of input can be reduced by attenuator, because working as input signal power
Gain amplifier saturation will be will cause when excessive and generate non-linear distortion, therefore two-stage gain amplifier is arranged to meet
While the entire gain in channel meets design objective, it is also possible that the integrality of signal is guaranteed.For example, if
The entire gain of the two gain amplifiers is 40-50dB, if the excessively a height of 30dB of the gain of first order rf gain amplifier,
And the gain of second level rf gain amplifier is 20dB, it is likely that will cause from the output of first order rf gain amplifier
RF signal power is bigger, will cause amplification saturation, such second level when directly inputting second level rf gain amplifier
The radiofrequency signal of rf gain amplifier output will be distorted.It at this time can be in first order rf gain amplifier and the second level
The radio frequency letter for being input to second level rf gain amplifier is reduced between rf gain amplifier by increasing matched attenuator
Number power, and be unlikely to so that second level rf gain amplifier operation hypersaturated state make output radiofrequency signal lose
Very.
It is on the one hand since power amplification obtains in addition, radio-frequency power amplifier 4 is arranged in relatively rearward position
Radiofrequency signal it is more powerful, therefore electric current increase, power consumption increase, power output it is also big, being placed on rear end can be to avoid this
Current power dissipation interferes circuits other in radio frequency, enhances the Electro Magnetic Compatibility of radio-frequency channel.On the other hand it is also beneficial to
The radiofrequency signal of directly external output high-power, avoids the influence to prime radio circuit, the external output mismatch of generation immediately,
Load connection is unreliable, even without connecing rf load, can be increased by setting to the protection circuit of the radio-frequency power amplifier
Its strong functional reliability, and will not gain amplification on prime and filtering damage and influence.It is preferred, therefore, that radio frequency
Power amplifier further includes the power supply power supply protection circuit for being powered on work to it and being protected.
The first order radio-frequency filter and the second level radio-frequency filter are the identical microstrip filter of structure.
It is further preferred that as shown in figure 3, the microstrip filter 23 include be arranged in it is U-shaped micro- on ceramic substrate
Wave metal tape, i.e. 231 to the 7th microwave metal tape 237 of the first microwave metal tape, these microwave metal tapes are with the first microwave metal
It centered on band 231, is laterally sequentially arranged at intervals, opening direction is interspersed and is centrosymmetric.Wherein the first microwave metal tape
231 opening upwards and it is located at symmetrical centre, Open Side Down for the second microwave metal tape 232 and third microwave metal tape 233,
It is located at the left and right side of the first microwave metal tape 231,234 opening upwards of the 4th microwave metal tape and is located at described
The left side of second microwave metal tape 232,235 opening upwards of the 5th microwave metal tape and be located at the third microwave metal tape 233
Right side, the 6th microwave metal tape 236 Open Side Down and be located at the 4th microwave metal tape 234 left side, the described 6th is micro-
It is laterally extended on the left branch of wave metal tape 236 as first port 238, Open Side Down and is located at institute for the 7th microwave metal tape 237
The right side of the 5th microwave metal tape 235 is stated, is laterally extended on the right branch of the 7th microwave metal tape 237 as second port
239。
Preferably, for the first microwave metal tape 231, the width of the metal tape is 0.22mm, left-hand branch and right side point
The length of branch is identical, is 1.6mm, and the length that lower part connects branch is 1.23mm, the first microwave metal tape 231 with it is described
Second microwave metal tape 232, third microwave metal tape 233 interval be 0.25mm.Also, the second microwave metal tape
0.22mm, the third microwave metal tape 233 and the 5th microwave are divided between 232 and the 4th microwave metal tape 234
It is divided into 0.22mm between metal tape 235, is divided between the 4th microwave metal tape 234 and the 6th microwave metal tape 236
0.1mm is divided into 0.1mm between the 5th microwave metal tape 235 and the 7th microwave metal tape 237.
It is further preferred that the filtering characteristic in order to realize the filter, the 6th microwave metal tape 236 and the 7th microwave gold
Belong to band 237 also further to optimize in structure.The length of the right-hand branch of the 6th microwave metal tape 236 is 1.6mm,
Width is 0.22mm, and the length of left-hand branch is 1.4mm, and width is 0.23mm, and upper end connection branch is divided into two sections, wherein position
It is 0.63mm in the length of first linkage section in left side, width is 0.23mm, and the length positioned at second linkage section on right side is
0.62mm, width are 0.22mm；The length of the first port 238 is 1.05mm, and width is 0.25mm, the first port
The distance that 238 top connects the top of first linkage section of branch to the upper end is 0.54mm.
The length of the left-hand branch of the 7th microwave metal tape is 1.6mm, and width is 0.22mm, the length of right-hand branch
It is 1.4mm, width is 0.23mm, and upper end connection branch is divided into two sections, wherein the length positioned at first linkage section on right side is
0.63mm, width are 0.23mm, and the length positioned at second linkage section in left side is 0.62mm, and width is 0.22mm；Described second
The length of port is 1.05mm, and width is 0.25mm, and the top of the second port 239 connects the described of branch to the upper end
The distance of the top of first linkage section is 0.54mm.
Above this structure design is designed based on microstrip filter technical indicator to be achieved under the conditions of small size
, the bandpass filtering range of the microstrip filter is 13.55GHz-14.7GHz, pass band insertion loss≤6dB, with interior ripple
≤ 1dB, VSWR≤1.3, Out-of-band rejection: within the scope of 10.95GHz-12.8GHz >=50dBc, 15.6GHz >=40dBc.
In addition, the length of entire radio frequency microstrip filter only has 11.87mm, highly it is less than 2mm, these microwave metal tapes
Thickness is 0.19mm, be set to ceramic substrate with a thickness of 0.254mm.It can be seen that the microstrip filter has the volume knot of very little
Structure, suitable for minimizing the use of ODU transmission channel.
Further, Fig. 4 shows the actual circuit composition figure of the radio circuit.Including frequency mixer 1, the first order is penetrated
Frequency filter 21, first order rf gain amplifier 31, second level radio-frequency filter 22,32 He of second level rf gain amplifier
Radio-frequency power amplifier 33 and cavity body filter 4.It can further be seen that frequency mixer 1, first order radio-frequency filter in Fig. 4
21, then 31 cross direction profiles of first order rf gain amplifier pass through turning microstrip line W0 for first order rf gain amplifier
31 are electrically connected with vertically arranged second level rf gain amplifier 32, and in turning microstrip line W0 and second level rf gain
Matched attenuator 203 is additionally provided between amplifier 32.In this way, second level radio-frequency filter 22, the amplification of second level rf gain
Device 32 and radio-frequency power amplifier 33 are distributed in vertical, and in second level rf gain amplifier 32 and radio-frequency power amplifier 33
Between be electrically connected by the first microstrip line W1, and radio-frequency power amplifier 33 is further through the second microstrip line W2 and cavity body filter 4
Electrical connection.
This space layout for the radio circuit that Fig. 4 is shown makes entire radio circuit channel be rendered as the structure of reverse L type,
This topology layout has adapted to the design requirement of miniaturization, in a limited space in extend the length of radio circuit to greatest extent
Degree.Also, metal wall further also is set by the two sides in the radio circuit channel, so that from frequency mixer to radio frequency function
Rate amplifier, and be arranged in a continuous and independent metal cavity including the second microstrip line W2, so that entirely
Radio circuit is shielded by the metal cavity, will not be invaded and harassed by extraneous electromagnetic interference signal.
Following figure 5 will be specifically described the enlarged view of each component part in Fig. 4 to Fig. 7.
As shown in figure 5, the frequency mixer includes chip NC17104C-620, wherein the local oscillator input terminal of the chip (illustrates LO
End) output end 101 of local oscillator filter is electrically connected by gold ribbon JD1.IF input terminal (the diagram end IF) is electrically connected by spun gold JS1
The output end of the first matching attenuation chip TGL4201 is connect, the input terminal of the first matching attenuation chip TGL4201 is also by spun gold
The output end 102 of JS2 connection intermediate-frequency circuit.RF output end (the diagram end RF) is electrically connected the second matching attenuation by gold ribbon JD2
The input terminal of chip TGL4201, the output end of the second matching attenuation chip TGL4201 is then further through gold ribbon JD3 electrical connection first
The first port 103 of grade radio-frequency filter (specific as shown in Figure 3).
Preferably, the diameter of spun gold here is 25um, and the width of gold ribbon is 75um, in radio circuit by spun gold and
Gold ribbon is electrically connected, and can be improved the conductibility of radiofrequency signal, reduces transmission loss, advantageous although will increase cost
In the radiofrequency characteristics for guaranteeing radio-frequency channel circuit.And it can be seen that preferred, the first both ends matching attenuation chip TGL4201
Spun gold be all respectively to have two, can both guarantee Conducted Radio Frequency characteristic in this way, can also reduce cost to greatest extent.In Fig. 5
The diameter of spun gold and the width of gold ribbon are equally applicable to the diameter of the spun gold in following figure 6 and Fig. 7 and the width of gold ribbon.It is preferred that
, the frequency range of the intermediate-freuqncy signal is 950MHz-1700MHz, and the frequency of the local oscillation signal is 12.8GHz, described to penetrate
The frequency range of frequency signal is 13.75GHz-14.5GHz.
Further, as shown in fig. 6, first order rf gain amplifier circuit composition is shown in Fig. 6.Including
Chip CHA3666, wherein the rf inputs (end IN in figure) of the chip are electrically connected third matching attenuation chip by gold ribbon JD4
The input terminal of the output end of TGL4201, third matching attenuation chip TGL4201 passes through the gold ribbon JD5 connection first order radio frequency
The second port 104 of filter.The RF output end (OUT terminal in figure) of the chip passes through the gold ribbon JD6 connection turning micro-strip
The defeated port P1 of the first port 105 of line W0, chip CHA3666 passes through spun gold JS3 grounding connection, the port of chip CHA3666
P2 passes through spun gold JS4 grounding connection.The port D1 of the chip CHA3666 is electrically connected by spun gold JS5 with first capacitor DR1,
The first capacitor DR1 is electrically connected by two spun gold JS6 with third capacitor DR3, corresponding, the end of the chip CHA3666
Mouth D2 is electrically connected by spun gold JS7 with the second capacitor DR2, and the second capacitor DR2 passes through two spun gold JS8 and third capacitor
DR3 electrical connection.The third capacitor DR3 is electrically connected by two spun gold JS9 with direct current 4V power supply end 106.
Second level rf gain amplifier in Fig. 4 is formed with circuit identical with circuit shown in Fig. 6, herein no longer
It repeats.
As can be seen that using chip CHA3666 in Fig. 6 is core as gain amplifier, also wrapped other than the chip
Above-mentioned patch capacitor is included, these capacitors occupy lesser volume, so that the volume of entire gain amplifier is also smaller, adapt to
The demand of miniaturization.In addition, connected by spun gold and gold ribbon between chip and these capacitors and capacitor also by spun gold and
Gold ribbon electrical connection, can enhance the Conducted Radio Frequency that the chip is electrically connected with these capacitors, ensure that the radio frequency of gain amplification is special
Property.
Further, as shown in fig. 7, RF power amplifier circuit composition is shown in Fig. 7.Wherein, the radio frequency
Power amplifier includes chip TGA2533, and wherein No. 1 input terminal of the chip passes through first micro-strip in gold ribbon JD7 and Fig. 4
The second port 108 of line W1 is electrically connected, and No. 5 ports and No. 6 ports pass through spun gold JS10, JS11 and the 4th capacitor DR4 electricity respectively
Connection, the 4th capacitor DR4 are electrically connected by two spun gold JS12 with the 6th capacitor DR6, and No. 7 ports pass through two spun golds
JS13 is electrically connected with the 5th capacitor DR5, and the 5th capacitor DR5 is electrically connected by two spun gold JS14 and the 6th capacitor DR6
It connects, No. 8 output ends are electrically connected by gold ribbon JD8 with the first port 109 of the second microstrip line W2 described in Fig. 4, and No. 11 ports are logical
It crosses two spun gold JS15 to be electrically connected with the 7th capacitor DR7, the 7th capacitor DR7 passes through two spun gold JS16 and the 8th capacitor
DR8 electrical connection, the 8th capacitor DR8 is connect by two spun gold JS17 with direct current 6V output end 110, and the 8th capacitor
DR8 is electrically connected and (is not indicated in figure) with the 6th capacitor DR6 by two spun golds, and No. 12 ports pass through spun gold JS18 and the 9th
Capacitor DR9 electrical connection, No. 13 ports are electrically connected by spun gold JS19 with the 9th capacitor DR9, and the 9th capacitor DR9 is logical
Two spun gold JS20 to be crossed to be electrically connected with the 8th capacitor DR8, No. 14 output ends are electrically connected by spun gold JS21 with capacitor DR10,
No. 15 ports are electrically connected by spun gold JS22 with capacitor DR10, and No. 16 ports are connect by spun gold JS23 with capacitor DR10, described
Capacitor DR10 is electrically connected by two spun gold JS24 with capacitor DR11, and the capacitor DR11 passes through two spun gold JS25 and direct current-
0.55V output end 111 is electrically connected.
As can be seen that using chip TGA2533 is core as radio-frequency power amplifier, further include other than the chip
Above-mentioned patch capacitor, these capacitors occupy lesser volume, so that the volume of entire radio-frequency power amplifier is also smaller, fit
The demand that should be minimized.In addition, being connected by spun gold and gold ribbon between chip TGA2533 and these capacitors and capacitor
It is electrically connected by spun gold and gold ribbon, the Conducted Radio Frequency that the chip is electrically connected with these capacitors can be enhanced, ensure that power is put
Big radiofrequency characteristics.
It forms and illustrates in conjunction with foregoing circuit, select chip CH3666 as gain amplifier here, be because by mixing
After device, matched attenuator, first order radio frequency microstrip filter, the power of obtained radiofrequency signal is in -20dBm or so, and most
Reaching cavity body filter RF signal power afterwards near 25dBm, will require here the radio-frequency channel power amplification of 45dB.
The yield value of chip CH3666 is 20dB, 1dB compression point (P1dB) minimum 15dBm of output power, therefore passes through CH3666
After the first stage gain amplification, for the radio-frequency input signals of -20dBm, export as 0dBm, it is corresponding much smaller than 1dB compression point
15dBm, and for and have passed through second level radio-frequency filter and corresponding matching attenuation after the first stage gain amplification
Device, then power is -10dBm left when the power of the radiofrequency signal reaches second level rf gain amplifier chip CH3666
The right side, wherein second level radio-frequency filter is microstrip filter, has the channel attenuation of 6dB, along with two matched attenuators respectively have
The channel attenuation of 3dB, therefore in -10dBm or -9dBm, in this way using second level rf gain amplifier chip CH3666 after,
The RF signal power of output is 10dBm, and 15dBm corresponding still less than 1dB compression point has still ensured that radiofrequency signal in this way
Integrality and formedness.But if amplified again with one step gain this when, i.e., third is realized using chip CH3666
Stage gain amplification, since its input power is that 10dBm is exported when there is the gain of 20dB as 30dBm, it is clear that this has exceeded
1dB compression point corresponding 15dBm, hence it is evident that cause distorted signals.Therefore radio-frequency power amplifier chip is selected here
TGA2533, the 1dB compression point of the output power of the chip correspond to 34dBm, and corresponding output power should not exceed the value, and
The gain amplifier of the chip has the range of 24-28dB, therefore exports when by second level rf gain amplifier chip CH3666
After the radiofrequency signal of 10dBm power, radio-frequency power amplifier chip TGA2533 can be directly inputted to and carry out power amplification, it is defeated
RF signal power out is 34-38dBm, and wherein 34dBm is exactly the 1dB compression point of the output power of the chip, therefore just
The good RF signal power for meeting output is maximum, while being also able to maintain good signal integrity.
In addition, two-stage radio-frequency filter is the identical microstrip filter of structure here, the first radio-frequency filter is to mixing
The radiofrequency signal obtained afterwards carries out bandpass filtering, the intermodulation product after inhibiting mixing, and the setting of the second radio-frequency filter is penetrated first
After frequency gain amplifier, mainly to gain amplify issuable non-linear distortion and caused by clutter ingredient inhibit
Filtering overcomes the change of gain amplification bring frequency content, and the power for inhibiting gain to amplify synchronous bring out of band signal increases
Add.And under the premise of it is then to reduce insertion loss as far as possible that the purpose of cavity body filter is arranged after radio-frequency power amplifier,
Obtain biggish Out-of-band rejection.Preferably, in-band insertion loss≤0.5dB of cavity body filter here, hence it is evident that be less than micro-strip
The insertion loss of the 6dB of filter, Out-of-band rejection are: Out-of-band rejection ratio is 50dB within the scope of 10.95GHz-12.75GHz,
The Out-of-band rejection ratio of 14.7GHz is 30dB.It is further preferred that the size of the cavity body filter be 50mm × 13.5mm ×
8.73mm, band logical 13.75GHz-14.5GHz, with interior Insertion Loss≤0.5dB, passband fluctuation≤± 0.2dB.
Further, it can be seen that include 6V and two voltages of -0.55V in Fig. 7 for chip TGA2533 power supply, it is also necessary to
Protection is powered to the two voltages, single voltage is prevented to be applied to TGA2533.
As shown in Figure 8, it is shown that negative pressure circuit composition, which includes chip LTC1983ES6-5 and chip
AD8615AUJZ, the pressure stabilizing 5V voltage are electrically connected the electricity of the chip LTC1983ES6-5 by concatenated inductance L15 and L14
Source.The power end is also electrically connected shunt capacitance C82 and is grounded, and the voltage output end of the chip then passes through potential-divider network and connects core
Piece AD8615AUJZ.Specifically, access chip after the voltage output end series resistor R35 of chip LTC1983ES6-5
The 3rd pin of AD8615AUJZ, and the pin is also electrically connected another resistance R36, and the other end of resistance R36 is grounded, and chip
The voltage output end of LTC1983ES6-5 is also directly electrically connected with the 2nd pin of chip AD8615AUJZ.Chip AD8615AUJZ
The 1st pin and the electrical connection of the 4th pin, and the 4th pin is also connected with shunt capacitance C86 and C85 as voltage output pin,
C85=0.1uF, C86=1nF.4th pin output voltage is the negative polarity electricity exported to radio-frequency power amplifier
Pressure.By chip AD8615AUJZ output negative pole voltage, the reverse voltage is -0.55V.
Further, as shown in Figure 9, it is shown that 6V voltage output protect circuit composition, including triode MMBT3904 and
PMOS tube IRF7210PBF, the pressure stabilizing 5V concatenate the base stage that the triode MMBT3904 is electrically connected after a resistance R34, described
The emitter of triode MMBT3904 is grounded, collector series connection the first divider resistance R31 and the second divider resistance R30, and described the
It is electrically connected the grid of the PMOS tube IRF7210PBF between one divider resistance R31 and the second divider resistance R30, described second point
The other end of piezoresistance R30 is electrically connected the source electrode of the PMOS tube IRF7210PBF, and described in the pressure stabilizing 6V is also electrically connected
The source electrode of PMOS tube IRF7210PBF, the drain electrode of the PMOS tube IRF7210PBF are electrically connected the electricity of the radio-frequency power amplifier
Source positive terminal.
Preferably, the resistance value of first divider resistance and the second divider resistance is 50k Ω.Here when pressure stabilizing 5V is normal
When, triode MMBT3904 conducting, pressure stabilizing 6V is by the first divider resistance R30 and the second divider resistance R31, so that PMOS tube
Pressure difference is generated between the grid G and source S of IRF7210PBF, so that pressure stabilizing 6V electricity be connected to drain D, and then is amplified to radio-frequency power
Device exports 6V voltage, if pressure stabilizing 5V electricity does not add, triode MMBT3904 is not turned on, and divider resistance 31 will not work, grid
Without pressure difference between pole G and source S, PMOS tube IRF7210PBF is not turned on, and drain D will not export pressure stabilizing 6V voltage.
In addition, the radio-frequency power amplifier selected here is TGA2533, two kinds of polar power supplys of needs of the chip
Power supply, is 6V and -0.55V respectively.
It is possible thereby to it is further seen that, it powers, bears for the bipolar power supply of radio-frequency power amplifier chip TGA2533
Voltage -0.55V is divided after chip LTC1983ES6-5 and chip AD8615AUJZ carry out turning pressure by pressure stabilizing 5V and is obtained, this is negative
Being pressed in the case that no pressure stabilizing 5V applies will not generate, simultaneously because the effect of 6V voltage output protection circuit, gives chip
The pressure stabilizing 6V of TGA2533 power supply will not be applied on the chip, be thus ensured to radio-frequency power amplifier chip TGA2533
The synchronous protection characteristic of bipolarity power supply.
Based on above embodiments, the invention discloses a kind of for minimizing the radio circuit of ODU transmission channel, including mixed
Frequency device, the frequency mixer include the IF input terminal for inputting intermediate-freuqncy signal, the local oscillator input terminal for inputting local oscillation signal, and mixing
The RF output end of radiofrequency signal is exported afterwards, and the RF output end electrical connection is for inhibiting the intermodulation in the radiofrequency signal miscellaneous
The radio-frequency filter of wave, the radio frequency that the rear stage of the radio-frequency filter is electrically connected for amplifying to the radiofrequency signal are put
Big device is also electrically connected the cavity for carrying out Out-of-band rejection to the radiofrequency signal in the rear stage of the radio frequency amplifier and filters
Device.Further disclose the composition of chip and interface network used in foregoing circuit.The circuit is sent out applied to satellite communication
Penetrate channel, radio frequency signal frequency can be modified, at the same have it is reliable and stable, save power consumption, small volume, cost is relatively low
The advantages that.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure transformation made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant technical fields,
It is included within the scope of the present invention.
Claims (10)
1. a kind of for minimizing the radio circuit of ODU transmission channel, including frequency mixer, which is characterized in that the frequency mixer packet
It includes the IF input terminal of input intermediate-freuqncy signal, input the local oscillator input terminal of local oscillation signal, and export radiofrequency signal after mixing
RF output end, the RF output end are electrically connected the radio-frequency filter for inhibiting the intermodulation clutter in the radiofrequency signal,
The rear stage of the radio-frequency filter is electrically connected the radio frequency amplifier for amplifying to the radiofrequency signal, in the radio frequency
The rear stage of amplifier is also electrically connected the cavity body filter for carrying out Out-of-band rejection to the radiofrequency signal.
2. according to claim 1 for minimizing the radio circuit of ODU transmission channel, which is characterized in that the radio frequency
Filter includes first order radio-frequency filter and second level radio-frequency filter.
3. according to claim 2 for minimizing the radio circuit of ODU transmission channel, which is characterized in that the radio frequency
Amplifier includes first order rf gain amplifier, second level rf gain amplifier and radio-frequency power amplifier, the mixing
After the RF output end of device is electrically connected the first order radio-frequency filter, it is sequentially connected the first order rf gain amplification
Device, the second level radio-frequency filter, the second level rf gain amplifier and the radio-frequency power amplifier.
4. according to claim 3 for minimizing the radio circuit of ODU transmission channel, which is characterized in that the mixing
Between the RF output end of device and the first order radio-frequency filter, the first order radio-frequency filter and the first order radio frequency
Between gain amplifier, between the first order rf gain amplifier and radio frequency second level radio-frequency filter, Yi Jisuo
It states and is serially connected with matched attenuator between second level radio-frequency filter and the second level rf gain amplifier.
5. according to claim 4 for minimizing the radio circuit of ODU transmission channel, which is characterized in that described first
Grade radio-frequency filter and the second level radio-frequency filter are the identical microstrip filter of structure.
6. according to claim 5 for minimizing the radio circuit of ODU transmission channel, which is characterized in that the micro-strip
Filter includes the U-shaped microwave metal tape being arranged on ceramic substrate, i.e. the first microwave metal tape to the 7th microwave metal tape,
And centered on the first microwave metal tape, laterally it is sequentially arranged at intervals, opening direction is interspersed and is centrosymmetric,
Wherein the first microwave metal tape opening upwards and be located at symmetrical centre, the second microwave metal tape and third microwave metal tape are equal
Open Side Down, is located at the left and right side of the first microwave metal tape, the 4th microwave metal tape opening upwards and is located at
The left side of the second microwave metal tape, the 5th microwave metal tape opening upwards and the right side for being located at the third microwave metal tape
Side, Open Side Down and is located at the left side of the 4th microwave metal tape for the 6th microwave metal tape, the 6th microwave metal tape
It is laterally extended on left branch as first port, Open Side Down and is located at the right side of the 5th microwave metal tape for the 7th microwave metal tape
Side is laterally extended as second port on the right branch of the 7th microwave metal tape.
7. according to claim 6 for minimizing the radio circuit of ODU transmission channel, which is characterized in that the mixing
Device includes chip NC17104C-620, and the frequency range of the intermediate-freuqncy signal is 950MHz-1700MHz, the local oscillation signal
Frequency is 12.8GHz, and the frequency range of the radiofrequency signal is 13.75GHz-14.5GHz, the chip NC17104C-620's
IF input terminal is also electrically connected with matched attenuator and inputs the intermediate-freuqncy signal, and the matched attenuator is chip
TGL4201。
8. according to claim 7 for minimizing the radio circuit of ODU transmission channel, which is characterized in that described first
Grade rf gain amplifier and second level rf gain amplifier include chip CHA3666.
9. according to claim 8 for minimizing the radio circuit of ODU transmission channel, which is characterized in that the radio frequency
Power amplifier includes chip TGA2533, and provides the power circuit of bipolar voltage power supply for the chip TGA2533.
10. according to claim 9 for minimizing the radio circuit of ODU transmission channel, which is characterized in that the cavity
The size of filter be 50mm × 13.5mm × 8.73mm, bandpass range 13.75GHz-14.5GHz, with interior Insertion Loss≤
0.5dB, passband fluctuation≤± 0.2dB.
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| CN201811189746.6A CN109120286B (en) | 2018-10-12 | 2018-10-12 | Radio frequency circuit for miniaturized ODU transmitting channel |
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| CN109120286B (en) | 2024-01-23 |
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