CN109167602B - Miniaturized ODU emission channel module - Google Patents
Miniaturized ODU emission channel module Download PDFInfo
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- CN109167602B CN109167602B CN201811189751.7A CN201811189751A CN109167602B CN 109167602 B CN109167602 B CN 109167602B CN 201811189751 A CN201811189751 A CN 201811189751A CN 109167602 B CN109167602 B CN 109167602B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/03—Constructional details, e.g. casings, housings
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/14—Relay systems
- H04B7/15—Active relay systems
- H04B7/185—Space-based or airborne stations; Stations for satellite systems
- H04B7/1851—Systems using a satellite or space-based relay
- H04B7/18515—Transmission equipment in satellites or space-based relays
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0491—Circuits with frequency synthesizers, frequency converters or modulators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention discloses a miniaturized ODU transmitting channel module, which comprises a box body and a box cover, wherein the box body comprises an upper cavity and a lower cavity which are isolated from each other, an intermediate frequency cavity for accommodating an intermediate frequency circuit, a radio frequency cavity for accommodating a radio frequency circuit and a power supply cavity for accommodating a power supply circuit are arranged in the upper cavity, a local oscillation circuit is arranged in the lower cavity, the local oscillation circuit is connected into the radio frequency cavity through an insulator and a microstrip line with holes, an output local oscillation signal is mixed with an intermediate frequency signal output by the intermediate frequency circuit to obtain a radio frequency signal, and the radio frequency signal is amplified and filtered by the radio frequency circuit and then is input into a radio frequency cavity filter arranged in the upper cavity. The transmitting channel module has the advantages of small volume, low power consumption, stability, reliability and wide applicable frequency band range.
Description
Technical Field
The invention belongs to the technical field of communication, and particularly relates to a miniaturized ODU transmitting channel module.
Background
In satellite communication devices, ODU (Out-door Unit) refers to an outdoor Unit, mainly comprising frequency conversion and power amplification, and may be specifically divided into a transmitting channel and a receiving channel, where the transmitting channel is usually referred to as BUC (Block Up-Converter), i.e. an Up-conversion radio frequency power amplifier, and the receiving channel is mainly referred to as LNB (Low Noise Block down-Converter), i.e. a low noise amplifying, frequency Converter.
In the prior art, for the transmitting channel module, the size is large, the weight is heavy, the external interfaces are more, the working performance is unreliable, the channel frequency conversion is single, for example, the local oscillation frequency of the transmitting channel is fixed and not adjustable, so that the application requirement of miniaturization and multiple purposes is difficult to meet.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a miniaturized ODU emission channel module, which solves the problems of large volume, unreasonable internal structure, unstable and reliable working performance and the like of the emission channel module in the prior art.
In order to solve the technical problems, the technical scheme adopted by the invention is to provide a miniaturized ODU emission channel module, which comprises a box body and a box cover covering the box body, wherein the box body comprises an upper cavity and a lower cavity which are isolated from each other, and the box cover correspondingly comprises an upper box cover covering the upper cavity and a lower box cover covering the lower cavity; the upper cavity is internally provided with an intermediate frequency cavity for accommodating an intermediate frequency circuit, a radio frequency cavity for accommodating a radio frequency circuit and a power supply cavity for accommodating a power supply circuit, the lower cavity is internally provided with a local oscillation circuit, the local oscillation circuit is connected into the radio frequency cavity through an insulator and a micro-strip line with holes, an output local oscillation signal is mixed with an intermediate frequency signal output by the intermediate frequency circuit to obtain a radio frequency signal, and the radio frequency signal is input into a radio frequency cavity filter arranged in the upper cavity after being amplified and filtered by the radio frequency circuit.
In another embodiment of the miniaturized ODU emission channel module of the present invention, the intermediate frequency cavity is disposed at a left portion of the upper cavity, the power supply cavity is located at a right side of the intermediate frequency cavity and is in power supply connection with the intermediate frequency cavity, the radio frequency cavity is in an inverse L-shaped structure and is located at a lower side of the intermediate frequency cavity and a right side of the power supply cavity, and the cavity filter is disposed at an upper portion of the upper cavity and is located at upper sides of the intermediate frequency cavity, the power supply cavity and the radio frequency cavity.
In another embodiment of the miniaturized ODU emission channel module of the present invention, a power port, a reference source input port, an intermediate frequency signal input port are provided on an outer wall of the box body on a left side adjacent to the intermediate frequency cavity, and a radio frequency signal output port is provided on an outer wall of the box body on an upper side adjacent to the cavity filter; the power supply port is electrically connected to the power supply circuit in the power supply cavity, the reference source input port is electrically connected to the local oscillation circuit, the intermediate frequency signal input port is electrically connected to the intermediate frequency circuit of the intermediate frequency cavity, and the radio frequency signal output port is communicated with the cavity filter.
In another embodiment of the miniaturized ODU transmission channel module of the present invention, the radio frequency circuit is divided into a horizontal branch and a vertical branch, the horizontal branch includes a mixer, a first stage radio frequency filter, a first stage radio frequency gain amplifier, and the vertical branch includes a second stage radio frequency filter, a second stage radio frequency gain amplifier, and a radio frequency power amplifier, which are sequentially cascaded, and the first stage radio frequency gain amplifier and the second stage radio frequency filter are electrically connected through a turning microstrip line.
In another embodiment of the miniaturized ODU transmission channel module of the present invention, the local oscillation circuit includes a frequency synthesizer, a frequency multiplier, a local oscillation amplifier and a local oscillation filter that are sequentially connected in series, where the frequency synthesizer is electrically connected with the reference source input port, an external reference source inputs a reference frequency signal to the frequency synthesizer through the reference source input port, a numerical control interface of the frequency synthesizer is correspondingly and electrically connected with a singlechip, the singlechip inputs a frequency control parameter to the frequency synthesizer through the numerical control interface, the frequency multiplier multiplies a signal output by the frequency synthesizer to generate a local oscillation signal with a required frequency, then the local oscillation amplifier amplifies power of the local oscillation signal, and then the local oscillation filter suppresses and filters the local oscillation signal.
In another embodiment of the miniaturized ODU transmission channel module of the present invention, the radio frequency cavity includes the perforated microstrip line connected to an output end of the frequency multiplier, where the perforated end is electrically connected to an output end of the frequency multiplier located in the lower cavity through the insulator, and the other end is electrically connected to an input end of the local oscillator amplifier, an output end of the local oscillator amplifier is electrically connected to the local oscillator filter, and an output end of the local oscillator filter is electrically connected to the mixer.
In another embodiment of the miniaturized ODU transmission channel module of the present invention, the intermediate frequency circuit includes a temperature compensation attenuator, a first stage intermediate frequency filter, a first stage intermediate frequency amplifier, a second stage intermediate frequency amplifier, and a second stage intermediate frequency filter that are sequentially cascaded, and the second stage intermediate frequency filter is electrically connected to the mixer.
In another embodiment of the miniaturized ODU transmission channel module of the present invention, the power supply port includes a dc 5V power supply port and a dc 6V power supply port, the power supply circuit includes a 5V voltage input end and a 6V voltage input end, which are electrically connected to the dc 5V power supply port and the dc 6V power supply port, respectively, and the 5V voltage input end obtains a voltage stabilizing 5V after passing through a first power supply filter network, and is divided into a plurality of independent power supply branches to supply power to a plurality of chips of the transmission channel module, and the 6V voltage input end obtains a voltage stabilizing 6V after passing through a second power supply filter network, and supplies power to the radio frequency power amplifier in the radio frequency circuit. In another embodiment of the miniaturized ODU transmission channel module of the present invention, the local oscillation filter is a local oscillation microstrip filter.
In another embodiment of the miniaturized ODU transmission channel module of the present invention, the first stage rf filter and the second stage rf filter are rf microstrip filters with the same structure.
The beneficial effects of the invention are as follows: the invention discloses a miniaturized ODU transmitting channel module, which comprises a box body and a box cover, wherein the box body comprises an upper cavity and a lower cavity which are isolated from each other, an intermediate frequency cavity for accommodating an intermediate frequency circuit, a radio frequency cavity for accommodating a radio frequency circuit and a power supply cavity for accommodating a power supply circuit are arranged in the upper cavity, a local oscillation circuit is arranged in the lower cavity, the local oscillation circuit is connected into the radio frequency cavity through an insulator and a microstrip line with holes, an output local oscillation signal is mixed with an intermediate frequency signal output by the intermediate frequency circuit to obtain a radio frequency signal, and the radio frequency signal is amplified and filtered by the radio frequency circuit and then is input into a radio frequency cavity filter arranged in the upper cavity. The transmitting channel module has the advantages of small volume, low power consumption, stability, reliability and wide applicable frequency band range.
Drawings
FIG. 1 is a block diagram of one embodiment of a miniaturized ODU transmit channel module according to the present invention;
FIG. 2 is a diagram of the upper cavity composition of another embodiment of a miniaturized ODU emission channel module according to the invention;
FIG. 3 is a diagram of RF circuitry in another embodiment of a miniaturized ODU transmit channel module according to the invention;
FIG. 4 is a partial schematic diagram of a local oscillator circuit of another embodiment of a miniaturized ODU transmission channel module according to the invention;
FIG. 5 is a diagram of an insulator construction of another embodiment of a miniaturized ODU emission channel module according to the invention;
FIG. 6 is a diagram of a local oscillator microstrip filter according to another embodiment of the miniaturized ODU transmission channel module of the present invention;
FIG. 7 is a circuit diagram of a mixer in another embodiment of a miniaturized ODU transmit channel module of the invention;
FIG. 8 is a diagram of a RF microstrip filter composition according to another embodiment of a miniaturized ODU transmit channel module of the invention;
FIG. 9 is a diagram of an RF power amplifier configuration of another embodiment of a miniaturized ODU transmit channel module according to the invention;
FIG. 10 is a schematic diagram of a local oscillator circuit of another embodiment of a miniaturized ODU transmit channel module according to the invention;
FIG. 11 is a schematic diagram of an intermediate frequency circuit of another embodiment of a miniaturized ODU transmit channel module according to the invention;
FIG. 12 is a block diagram of a power circuit of another embodiment of a miniaturized ODU transmit channel module of the invention;
FIG. 13 is a circuit diagram of a first power supply branch of a power supply of another embodiment of a miniaturized ODU transmit channel module of the invention;
fig. 14 is a circuit diagram of a second power supply branch of a power supply of another embodiment of a miniaturized ODU transmit channel module of the present invention.
Detailed Description
In order that the invention may be readily understood, a more particular description thereof will be rendered by reference to specific embodiments that are illustrated in the appended drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Fig. 1 is a schematic diagram illustrating the composition of a miniaturized ODU transmit channel module according to an embodiment of the present invention. As shown in fig. 1, the box comprises a box body 1 and a box cover for covering the box body, wherein an upper cavity and a lower cavity which are isolated from each other are arranged in the box body 1, and the box cover correspondingly comprises an upper box cover 21 for covering the upper cavity and a lower box cover 22 for covering the lower cavity. Preferably, the volume of the entire module is 60mm×50mm×14mm.
With further reference to fig. 2, an intermediate frequency cavity 31 accommodating an intermediate frequency circuit, a radio frequency cavity 32 accommodating a radio frequency circuit, and a power supply cavity 33 accommodating a power supply circuit are provided in the upper cavity 3. A local oscillation circuit is arranged in the lower cavity, the local oscillation circuit is connected into the radio frequency cavity through an insulator and a micro-strip line with holes, the output local oscillation signal and an intermediate frequency signal output by the intermediate frequency circuit are mixed to obtain a radio frequency signal, and the radio frequency signal is amplified and filtered by the radio frequency circuit and then is input into a cavity filter 34 arranged in the upper cavity 3.
Further, as shown in fig. 2, the intermediate frequency cavity 31 is disposed at the left part of the upper cavity 3, the power supply cavity 33 is disposed at the right side of the intermediate frequency cavity 31 and is electrically connected with the intermediate frequency cavity, the radio frequency cavity 32 is in an inverted-L structure, and is disposed at the lower side of the intermediate frequency cavity 31 and the right side of the power supply cavity 33, and the cavity filter 34 is disposed at the upper part of the upper cavity 3 and is disposed at the upper sides of the intermediate frequency cavity 31, the power supply cavity 33 and the radio frequency cavity 32. The structural layout can reasonably divide each functional module in a limited volume, avoid mutual interference and ensure good electromagnetic compatibility.
Further, referring to fig. 1 and 2, a power port is provided on the outer wall of the box body on the left side adjacent to the intermediate frequency cavity 31, the power port includes a direct current 5V power port 101 and a direct current 6V power port 102, a reference source input port 11, an intermediate frequency signal input port 12, and a radio frequency signal output port 13 is provided on the outer wall of the box body on the upper side adjacent to the cavity filter; the power supply port is electrically connected to the power supply circuit in the power supply cavity 33, the reference source input port 11 is electrically connected to the local oscillator circuit in the lower cavity, the intermediate frequency signal input port 12 is electrically connected to the intermediate frequency circuit of the intermediate frequency cavity 31, and the radio frequency signal output port 13 is in communication with the cavity filter 34.
Further, as shown in fig. 3, the circuit composition inside the radio frequency cavity is further shown on the basis of fig. 2, and a part of the local oscillation circuit is also included, because another part of the local oscillation circuit is located in the lower cavity. Preferably, the local oscillation circuit comprises a frequency synthesizer, a frequency multiplier, a local oscillation amplifier and a local oscillation filter which are sequentially connected in series, the frequency synthesizer is electrically connected with the reference source input port, an external reference source inputs a reference frequency signal to the frequency synthesizer through the reference source input port, and the frequency multiplier multiplies the signal output by the frequency synthesizer to generate a local oscillation signal with a required frequency. Here, the frequency synthesizer and the frequency multiplier are located in the lower cavity, and the local oscillator amplifier and the local oscillator filter are located in the radio frequency cavity of the upper cavity. The local oscillation amplifier amplifies the power of the local oscillation signal, and the local oscillation filter suppresses and filters the local oscillation signal. In order to input the local oscillation signal generated by the frequency multiplier into the frequency mixer of the radio frequency circuit, and limited by volume, an electrical connection is established between the upper cavity and the lower cavity by using an insulator through-wall mode. The local oscillation circuit in the radio frequency cavity comprises a local oscillation amplifier 321 and a local oscillation filter 322, and the insulator is shown to be electrically connected with the input end of the local oscillation amplifier 321 through a microstrip line W1 with holes. The radio frequency circuit in the radio frequency cavity is divided into a transverse branch and a vertical branch, the transverse branch comprises a mixer 323, a first-stage radio frequency filter 324 and a first-stage radio frequency gain amplifier 325 which are cascaded in sequence, the vertical branch comprises a second-stage radio frequency filter 326, a second-stage radio frequency gain amplifier 327 and a radio frequency power amplifier 328 which are cascaded in sequence, the first-stage radio frequency gain amplifier 325 and the second-stage radio frequency filter 326 are electrically connected through a turning microstrip line W0, the second-stage radio frequency gain amplifier 327 and the radio frequency power amplifier 328 are electrically connected through a microstrip line W2, and the radio frequency power amplifier 328 and the cavity filter 34 are electrically connected through a microstrip line W3. The first stage RF filter 324 and the second stage RF filter 326 are RF microstrip filters having the same structure.
The composition of the local oscillation circuit and the radio frequency circuit in the radio frequency cavity and the circuit connection relationship between the local oscillation circuit and the radio frequency circuit and the power supply cavity are specifically described below.
As shown in fig. 4, the radio frequency cavity includes a first microstrip line W1 connected to the output end of the local oscillator circuit, the first microstrip line W1 is a perforated microstrip line, wherein the perforated end passes through a metal wall between the upper cavity and the lower cavity via an insulator, and is electrically connected to the output end of the frequency multiplier located in the lower cavity, the other end of the first microstrip line W1 is electrically connected to the input end of the local oscillator amplifier 321, the output end of the local oscillator amplifier 321 is electrically connected to the local oscillator filter 322, and the local oscillator filter 322 is a local oscillator microstrip filter.
Here, the structure of the insulator used is shown in fig. 5, and includes a cylindrical metal outer wall J2, an insulating layer J3, and a gold wire J1. The surface layer of the metal outer wall J2 is gold-plated, holes are drilled in the metal wall between the two cavities, then the insulator is inserted into the through hole, the metal outer wall and the through hole are firmly welded, the metal wire J1 and the metal outer wall J2 are mutually isolated and insulated through the insulating layer, and the gold wire J1 is used for circuit connection. The insulator is connected with a microstrip line with holes. The insulator connection can avoid the connection of the box body outside the box body by a feeder line in the traditional method, thereby being beneficial to reducing the volume of the whole module. Further, as shown in fig. 4, the local oscillator amplifier 321 shown in fig. 4 includes a chip CHA3666, where a radio frequency input end (I N end in the drawing) of the chip is electrically connected to an output end of a matching attenuation chip TGL4201 (labeled as F10 in the drawing) through gold, and an input end of the matching attenuation chip TGL4201 is connected to the first microstrip line W1 through gold. The radio frequency output end (OUT end in the figure) of the chip CHA3666 is connected with the local oscillator microstrip filter 322 through a gold band, the port P1 of the chip CHA3666 is connected with the ground through a gold wire, and the port P2 of the chip CHA3666 is connected with the ground through a gold wire. The port D1 of the chip CHA3666 is electrically connected to the first capacitor F11 by gold wires, the first capacitor F11 (preferably 100 pF) is electrically connected to the third capacitor F13 (preferably 1000 pF) by two gold wires, and correspondingly, the port D2 of the chip CHA3666 is electrically connected to the second capacitor F12 (preferably 100 pF) by gold wires, and the second capacitor F12 is electrically connected to the third capacitor F13 by two gold wires. The third capacitor F13 is electrically connected with the direct current 4V power supply end F14 through two gold wires. The direct current 4V power supply end is obtained by dividing the generated stable voltage 5V of the power circuit through a power supply branch circuit and is provided for the chip CHA3666 through an intermediate frequency cavity.
The first stage rf gain amplifier 325 and the second stage rf gain amplifier 327 in fig. 3 also use the chip CHA3666, and have the same circuit composition as the peripheral circuit of the chip CHA3666 in fig. 4, and will not be described again.
It can be seen that, in fig. 4, the chip CHA3666 is used as a core of the gain amplifier, and the chip includes the patch capacitors, which occupy a smaller volume, so that the volume of the whole gain amplifier is smaller, and the gain amplifier is suitable for the miniaturization requirement. In addition, the chip and the capacitors are connected through the gold wire and the gold belt, and the capacitors are also connected through the gold wire and the gold belt, so that the radio frequency conductivity of the chip and the capacitors in electric connection can be enhanced, and the radio frequency characteristic of gain amplification is ensured.
Fig. 6 shows the structural composition of the local oscillator microstrip filter. The local oscillation microstrip filter comprises 7U-shaped microwave metal strips arranged on a ceramic substrate, the microwave metal strips are sequentially arranged at intervals and are distributed in a central symmetry mode, wherein the opening of a first microwave metal strip 61 is upward and is positioned in the center of symmetry, the openings of a second microwave metal strip 62 and a third microwave metal strip 63 are downward and are respectively positioned on the left side and the right side of the first microwave metal strip 61, the opening of a fourth microwave metal strip 64 is upward and is positioned on the left side of the second microwave metal strip 62, the opening of a fifth microwave metal strip 65 is upward and is positioned on the right side of the third microwave metal strip 63, the opening of a sixth microwave metal strip 66 is downward and is positioned on the left side of the fourth microwave metal strip 64, the left branch of the sixth microwave metal strip 6 is transversely extended to form a first port 68, the opening of a seventh microwave metal strip 67 is downward and is positioned on the right side of the fifth microwave metal strip 65, and the right branch of the seventh microwave metal strip 67 is transversely extended to form a second port 69.
The width of the first microwave metal strip 61 is preferably 0.19mm, the lengths of the left branch and the right branch are the same, and are 1.99mm, the length of the lower connecting branch is 0.82mm, and the intervals between the first microwave metal strip 61 and the second microwave metal strip 62 and the intervals between the first microwave metal strip 63 and the third microwave metal strip are all 0.17mm.
Further preferably, the second microwave metal strip 62 and the third microwave metal strip 63 have the same structure, wherein the lengths of the left branch of the second microwave metal strip 62 and the left branch of the third microwave metal strip 63 are the same, and are 1.99mm, the lengths of the right branch of the second microwave metal strip 62 and the right branch of the third microwave metal strip 63 are the same, and are 1.99mm, and the lengths of the upper connecting branch of the second microwave metal strip 62 and the upper connecting branch of the third microwave metal strip 63 are the same, and are 0.82mm.
Preferably, the right branch of the second metal strip 62 is flush with the left branch of the first metal strip 61, i.e. the upper edge of the left branch of the first metal strip 61 is flush with the upper edge of the connecting branch corresponding to the upper end of the right branch of the second metal strip 62, while the lower edge of the right branch of the second metal strip 62 is flush with the lower edge of the connecting branch corresponding to the lower end of the left branch of the first metal strip 61. Also, the left side branch of the third strip 63 is flush with the right side branch of the first strip 61.
Preferably, the second microwave metal strip 62 is spaced from the fourth microwave metal strip 64 by 0.14mm, and the third microwave metal strip 63 is spaced from the fifth microwave metal strip 65 by 0.14mm.
Further preferably, the fourth microwave metal strip 64 and the fifth microwave metal strip 65 have the same structure, wherein the lengths of the left branch of the fourth microwave metal strip 64 and the left branch of the fifth microwave metal strip 65 are the same, and are 1.99mm, the lengths of the right branch of the fourth microwave metal strip 64 and the right branch of the fifth microwave metal strip 65 are the same, and are 1.99mm, and the lengths of the lower connecting branch of the fourth microwave metal strip 64 and the lower connecting branch of the fifth microwave metal strip 65 are the same, and are 0.82mm.
The right side branch of the fourth strip 64 is flush with the left side branch of the second strip 62, and the left side branch of the fifth strip 65 is flush with the right side branch of the third strip 63. The fourth microwave metal strip 64 is spaced from the sixth microwave metal strip 66 by 0.07mm, and the fifth microwave metal strip 65 is spaced from the seventh microwave metal strip 67 by 0.07mm.
Further preferably, the length of the right branch of the sixth microwave metal strip 66 is 1.95mm, the width is 0.19mm, the length of the left branch is 1.75mm, the width is 0.24mm, and the upper connecting branch is divided into two sections, wherein the length of the first connecting section on the left side is 0.5mm, the width is 0.24mm, and the length of the second connecting section on the right side is 0.3mm, and the width is 0.19mm.
The first port 68 has a length of 0.97mm and a width of 0.24mm, and the distance from the upper edge of the first port to the upper edge of the first connecting section 631 of the upper connecting branch is 0.91mm. The first port 68 and the second port 69 have the same structure, and are symmetrically distributed about the microstrip center, the length of the second port 69 is 0.97mm, the width is 0.24mm, and the distance from the upper edge of the second port 69 to the upper edge of the first connection section of the upper end connection branch is 0.91mm. The distance between the first port 68 and the second port 69, i.e. the length of the microstrip filter, is 8.36mm.
Preferably, the sixth microwave metal strip 66 and the seventh microwave metal strip 67 have the same structure, and are bilaterally symmetrical about the microstrip center, the length of the left branch of the seventh microwave metal strip 67 is 1.95mm, the width is 0.19mm, the length of the right branch is 1.75mm, the width is 0.24mm, and the upper connecting branch is divided into two sections, wherein the length of the first connecting section located on the right side is 0.5mm, the width is 0.24mm, the length of the second connecting section located on the left side is 0.3mm, and the width is 0.19mm.
Further preferably, the thickness of each of the first to seventh microwave metal strips 61 to 67 is 0.19mm, and the thickness of the ceramic substrate is 0.254mm.
Further preferably, the band-pass filtering range of the local oscillator microstrip filter is 12.5GHz-14.2GHz, the insertion loss of the pass band is less than or equal to 3dB, the VSWR is less than or equal to 1.3, and the out-of-band suppression is as follows: the out-of-band rejection ratio is more than or equal to 55dBc in the range of 6.4GHz-6.5GHz, and the out-of-band rejection ratio is more than or equal to 55dBc in the range of 19.2GHz-19.575 GHz.
As shown in fig. 7, the mixer includes a chip NC17104C-620, wherein a local oscillator input terminal (LO terminal shown) of the chip is electrically connected to the output port 101 (i.e., corresponding to the second port 69 in fig. 6) of the local oscillator filter through a gold band JD 1. The intermediate frequency input (illustrated I F) is electrically connected to the output of the first matched attenuator chip TGL4201 via a wire JS1, and the input of the first matched attenuator chip TGL4201 is also connected to the output 102 of the intermediate frequency circuit via a wire JS 2. The RF output terminal (RF terminal shown) is electrically connected to the input terminal of the second matching attenuation chip TGL4201 through the gold band JD2, and the output terminal of the second matching attenuation chip TGL4201 is electrically connected to the first port 103 of the first stage RF filter (shown in fig. 8) through the gold band JD 3.
Preferably, the diameter of the gold wire is 25um, the width of the gold belt is 75um, and the gold wire and the gold belt are electrically connected in the radio frequency circuit, so that the conductivity of radio frequency signals can be improved, the transmission loss can be reduced, and the radio frequency characteristics of the radio frequency channel circuit can be guaranteed while the cost can be increased. And it can be seen that preferably, the two wires at two ends of the first matching attenuation chip TGL4201 are two, so that the radio frequency conduction characteristic can be ensured, and the cost can be reduced to the greatest extent. Preferably, the frequency range of the intermediate frequency signal is 950MHz-1700MHz, the frequency of the local oscillator signal is 12.8GHz, and the frequency range of the radio frequency signal is 13.75GHz-14.5GHz.
The first stage RF filter 324 and the second stage RF filter 326 in FIG. 3 are RF microstrip filters of identical structure. Further preferably, as shown in fig. 8, the rf microstrip filter includes U-shaped microwave metal strips, i.e., first to seventh microwave metal strips 81 to 87, disposed on a ceramic substrate, where the microwave metal strips are arranged at intervals in a transverse direction with respect to the first microwave metal strip 81, and the opening directions of the microwave metal strips are staggered and are symmetrical in the center. The first microwave metal belt 81 is opened upwards and is positioned at the symmetry center, the second microwave metal belt 82 and the third microwave metal belt 83 are opened downwards and are respectively positioned at the left side and the right side of the first microwave metal belt 81, the fourth microwave metal belt 84 is opened upwards and is positioned at the left side of the second microwave metal belt 82, the fifth microwave metal belt 85 is opened upwards and is positioned at the right side of the third microwave metal belt 83, the sixth microwave metal belt 86 is opened downwards and is positioned at the left side of the fourth microwave metal belt 84, the left branch of the sixth microwave metal belt 86 is transversely extended to form a first port 88, the seventh microwave metal belt 87 is opened downwards and is positioned at the right side of the fifth microwave metal belt 85, and the right branch of the seventh microwave metal belt 87 is transversely extended to form a second port 89.
Preferably, for the first microwave metal strip 81, the width of the metal strip is 0.22mm, the lengths of the left side branch and the right side branch are the same, and are 1.6mm, the length of the lower connecting branch is 1.23mm, and the intervals between the first microwave metal strip 81 and the second microwave metal strip 82 and the intervals between the first microwave metal strip 83 and the third microwave metal strip 83 are all 0.25mm. The distance between the second microwave metal strip 82 and the fourth microwave metal strip 84 is 0.22mm, the distance between the third microwave metal strip 83 and the fifth microwave metal strip 85 is 0.22mm, the distance between the fourth microwave metal strip 84 and the sixth microwave metal strip 86 is 0.1mm, and the distance between the fifth microwave metal strip 85 and the seventh microwave metal strip 87 is 0.1mm.
It is further preferred that the sixth and seventh microwave metal strips 86, 87 are further optimized in structure in order to achieve the filter characteristics of the filter. The length of the right branch of the sixth microwave metal strip 86 is 1.6mm, the width is 0.22mm, the length of the left branch is 1.4mm, the width is 0.23mm, the upper connecting branch is divided into two sections, wherein the length of the first connecting section positioned at the left side is 0.63mm, the width is 0.23mm, the length of the second connecting section positioned at the right side is 0.62mm, and the width is 0.22mm; the length of the first port 88 is 1.05mm and the width is 0.25mm, and the distance from the upper edge of the first port 88 to the upper edge of the first connecting section of the upper connecting branch is 0.54mm.
The length of the left branch of the seventh microwave metal belt is 1.6mm, the width is 0.22mm, the length of the right branch is 1.4mm, the width is 0.23mm, the upper connecting branch is divided into two sections, wherein the length of the first connecting section positioned on the right side is 0.63mm, the width is 0.23mm, the length of the second connecting section positioned on the left side is 0.62mm, and the width is 0.22mm; the length of the second port is 1.05mm and the width is 0.25mm, and the distance from the upper edge of the second port 89 to the upper edge of the first connecting section of the upper connecting branch is 0.54mm.
The structural design is designed based on the technical index to be achieved by the microstrip filter under the small-size condition, the band-pass filtering range of the radio-frequency microstrip filter is 13.55GHz-14.7GHz, the insertion loss of the pass band is less than or equal to 6dB, the in-band ripple is less than or equal to 1dB, the VSWR is less than or equal to 1.3, and the out-of-band rejection is realized: in the range of 10.95GHz-12.8GHz, the inhibition degree is more than or equal to 50dBc, and in the range of 15.6GHz, the inhibition degree is more than or equal to 40dBc.
In addition, the length of the whole radio frequency microstrip filter is only 8.36mm, the height is less than 2mm, and the thickness of the whole radio frequency microstrip filter arranged on the ceramic substrate is 0.254mm. The microstrip filter has a small volume structure, and is suitable for miniaturized ODU emission channels.
Further, as shown in fig. 9, the radio frequency power amplifier circuit composition is shown in fig. 9. The rf power amplifier includes a chip TGA2533, where an input end of the chip 1 is electrically connected to a port 108 of the microstrip line W2 in fig. 3 through a gold band JD7, a port 5 and a port 6 are electrically connected to each other through a gold wire JS10, a JS11 and a fourth capacitor DR4, the fourth capacitor DR4 is electrically connected to a sixth capacitor DR6 through two gold JS12, a port 7 is electrically connected to a fifth capacitor DR5 through two gold JS13, the fifth capacitor DR5 is electrically connected to a sixth capacitor DR6 through two gold JS14, an output end 8 is electrically connected to a port 109 of the microstrip line W3 in fig. 3 through a gold band JD8, a port 11 is electrically connected to a seventh capacitor DR7 through two gold wire JS16, a eighth capacitor DR8 is electrically connected to each other through two gold wire JS16, a capacitor DR8 is electrically connected to a direct current 6V output end 110 through two gold wire JS12, a fourth capacitor JS 8 is electrically connected to a capacitor JS16, a length of the eighth capacitor JS 8 is electrically connected to a capacitor JS10 through two gold wire JS14, a length of the fourth capacitor JS16 is electrically connected to a capacitor DR11 through a capacitor JS 9, a capacitor JS 9 is electrically connected to a capacitor 10 through a longer wire JS16, a capacitor 19 is electrically connected to a capacitor 10 through a capacitor 10, a 19, a capacitor is electrically connected to a capacitor 19, a 19 is electrically connected to a capacitor 10 through a capacitor, a 9, and a capacitor is electrically connected to a capacitor, a 9. The parameters of the gold wire and the gold ribbon are the same as those of the embodiment shown in fig. 7, and will not be described again.
It can be seen that the chip TGA2533 is used as a core of the rf power amplifier, and the chip includes the patch capacitors, which occupy a smaller volume, so that the volume of the whole rf power amplifier is smaller, and the rf power amplifier is suitable for miniaturization. In addition, the chip TGA2533 is connected with the capacitors through the gold wires and the gold belts, and the capacitors are also connected through the gold wires and the gold wires, so that the radio frequency conductivity of the chip electrically connected with the capacitors can be enhanced, and the radio frequency characteristic of power amplification is ensured.
In combination with the above circuit composition, the chip CH3666 is selected as the gain amplifier, because the power of the obtained rf signal is about-20 dBm after passing through the mixer, the matching attenuator and the first stage rf microstrip filter, and the power of the rf signal reaching the cavity filter finally is about 25dBm, and here, the power amplification of the rf channel of 45dB is required. The gain value of the chip CH3666 is 20dB, the 1dB compression point (P1 dB) of the output power is 15dBm at minimum, so after CH3666 is used as a first-stage gain amplifier, the output is 0dBm for the radio frequency input signal of-20 dBm, which is far smaller than 15dBm corresponding to the 1dB compression point, and when the power of the radio frequency signal reaches the second-stage radio frequency gain amplifier chip CH3666 after the first-stage gain amplifier, which is about-10 dBm, wherein the second-stage radio frequency filter is a microstrip filter, has 6dB channel attenuation, and two matched attenuators are respectively provided with 3dB channel attenuation, so after the radio frequency signal passes through the second-stage radio frequency gain amplifier chip CH3666, the output radio frequency signal power is 10dBm, which is still smaller than 15 m corresponding to the 1dB compression point, and the integrity and the good dBm of the radio frequency signal are still ensured. However, if the first-stage gain amplification is used at this time, that is, the third-stage gain amplification is implemented by using the chip CH3666, since the input power is 10dBm, when the gain of 20dB is present, the output is 30dBm, which obviously exceeds 15dBm corresponding to the 1dB compression point, and signal distortion is obviously caused. Therefore, the rf power amplifier chip TGA2533 is selected, the 1dB compression point of the output power of the chip corresponds to 34dBm, the corresponding output power should not be greater than the value, and the amplification gain of the chip has a range of 24-28dB, so when the rf signal with 10dBm power is output by the second stage rf gain amplifier chip CH3666, the rf signal can be directly input to the rf power amplifier chip TGA2533 for power amplification, and the output rf signal power is 34-38dBm, wherein 34dBm is exactly 1dB compression point of the output power of the chip, so that the maximum output rf signal power can be satisfied, and good signal integrity can be maintained.
In addition, the two-stage radio frequency filters are microstrip filters with the same structure, the first radio frequency filter is used for carrying out band-pass filtering on radio frequency signals obtained after mixing and restraining intermodulation products after mixing, and the second radio frequency filter is arranged behind the first radio frequency gain amplifier and mainly used for carrying out restraining filtering on clutter components caused by nonlinear distortion possibly generated by gain amplification, overcoming the change of frequency components caused by gain amplification and restraining the power increase of out-of-band signals caused by gain amplification synchronization. The purpose of setting the cavity filter after the radio frequency power amplifier is to reduce the insertion loss as much as possible, so as to obtain larger out-of-band rejection. Preferably, the in-band insertion loss of the cavity filter is less than or equal to 0.5dB, which is obviously less than the insertion loss of 6dB of the microstrip filter, and the out-of-band rejection is as follows: the out-of-band rejection ratio was 50dBc in the range of 10.95GHz-12.75GHz and 30dBc in the 14.7GHz range. Further preferably, the size of the cavity filter is 50mm multiplied by 13.5mm multiplied by 8.73mm, the band pass is 13.75GHz-14.5GHz, the in-band insertion loss is less than or equal to 0.5dB, and the in-band fluctuation is less than or equal to +/-0.2 dB.
Further, as shown in fig. 10, compared with the local oscillation circuit in the lower cavity, the local oscillation circuit 410 includes a frequency synthesizer 413, a frequency multiplier 414, a local oscillation amplifier 415 and a local oscillation filter 416 connected in series in sequence, the frequency synthesizer is electrically connected with the reference source input port, a reference source input end 4131 (corresponding to the reference source input port 11 in fig. 1) of the frequency synthesizer 413 is electrically connected with an external reference source 411, the external reference source 411 inputs a reference frequency signal to the frequency synthesizer 413 through the reference source input end 4131, a numerical control interface 4132 of the frequency synthesizer 413 is correspondingly electrically connected with a singlechip 412, the singlechip 412 inputs a frequency control parameter to the frequency synthesizer 413 through the numerical control interface 4132, the frequency multiplier 414 performs frequency doubling on a signal output by the frequency synthesizer 413 to generate a local oscillation signal with a required frequency, then the local oscillation amplifier 415 performs power amplification on the local oscillation signal with a fundamental wave and then the local oscillation filter 416 performs suppression filtering on the local oscillation signal and a third harmonic wave.
For the embodiment shown in fig. 10, the external reference source 411 inputs a reference frequency signal to the frequency synthesizer 413 through the reference source input terminal 4131, and the singlechip 412 can input a frequency control parameter to the frequency synthesizer 413 through the nc interface 4132.
By adopting the local oscillation circuit shown in fig. 10, on one hand, the frequency output by the frequency synthesizer can be modified in a mode of writing frequency control parameters into the frequency synthesizer through the singlechip, so that the local oscillation circuit can be suitable for application requirements of various frequencies. The singlechip can be directly arranged in the local oscillation circuit, and parameters of a frequency control layer of the singlechip can be kept unchanged after being set in specific application, so that the output frequency of the local oscillation circuit is fixed, and when local oscillation with other frequencies is needed, the parameters can be changed through the singlechip. On the other hand, the frequency output by the frequency synthesizer can be increased by 2 times in a frequency multiplication mode, so that the frequency of the local oscillation signal output by the local oscillation circuit can be increased by frequency doubling under the condition that the output frequency of the frequency synthesizer is not high. And after further amplification, the noise waves generated in the front can be filtered by a filter, so that the clean local oscillation frequency is obtained.
The frequency synthesizer includes a chip ADF4355, the frequency multiplier includes a chip HMC369, and the local oscillator amplifier includes a chip CHA3666, as described above, and the local oscillator filter is a local oscillator microstrip filter corresponding to fig. 6.
Further, as shown in fig. 11, the intermediate frequency circuit includes a cascade temperature compensation attenuator 51, a first stage intermediate frequency filter 521, a first stage intermediate frequency amplifier 531, a second stage intermediate frequency amplifier 532, and a second stage intermediate frequency filter 522. The temperature compensation attenuator 51 can compensate gain reduction caused by the first stage intermediate frequency amplifier 531 and the second stage intermediate frequency amplifier 532 in the intermediate frequency circuit in a high temperature environment, the gain reduction value caused by the intermediate frequency circuit can be determined through high and low temperature experiments, and a proper temperature compensation attenuator can be selected through calculation. Preferably, a matching attenuator 5301 is also provided between the first intermediate frequency amplifier 531 and the second intermediate frequency amplifier 532.
The temperature compensation attenuator 51 is a chip STCA0609N9, the first stage intermediate frequency filter 521 is a chip HFCN-740, and the output end of the chip STCA0609N9 is directly and electrically connected with the input end of the chip HFCN-740. The first intermediate frequency amplifier 531 includes a die UPC3226 and the second stage intermediate frequency amplifier 532 includes die ECG001F-G and is electrically connected at an input of the die ECG001F-G to an output of the die UPC 3226. Preferably, a matching attenuator 5301 is connected in series between the input of the chip ECG001F-G and the output of the chip UPC 3226. Further, the second stage intermediate frequency filter 522 includes a chip LFCN1800 and is electrically connected to the output of the chip ECG001F-G at the input of the chip LFCN 1800. The aforementioned chip HFCN-740 performs high pass filtering, while the chip LFCN1800 performs low pass filtering, thereby limiting the frequency range of the intermediate frequency signal to a desired frequency range.
Preferably, the frequency range of the intermediate frequency signal input by the intermediate frequency circuit is 950MHz-1700MHz, the input power is-25 dBm, the output power is 6dBm after twice filtering and twice amplifying, and the twice filtering is low-pass filtering and high-pass filtering respectively, so that clutter is filtered in the frequency range of the intermediate frequency signal. The mode of arranging two amplifiers between the two filters is beneficial to filtering clutter components in a low frequency band, and then the amplification gain is determined by design indexes, for example, a gain value is selected according to the input power of an input intermediate frequency signal, if the gain of the first-stage amplification is insufficient, two-stage gain amplification is needed, impedance matching is needed before and after the two-stage amplifiers are cascaded, so that a better transmission effect is obtained, and the high-frequency clutter is filtered out by arranging a high-pass filter in the later stage. The chip components selected in the intermediate frequency circuit have a single chip, can realize the filtering or amplifying function, are small in size, few in pins, simple in peripheral circuit, low in power consumption and capable of supplying power to direct current 5V, and can provide good filtering characteristics and amplifying characteristics for input intermediate frequency signals, and the noise coefficient of the channel circuit is low, so that the chip components are suitable for the requirement of miniaturized ODU.
Further, as shown in fig. 12, the power supply circuit includes a 5V voltage input terminal 711 and a 6V voltage input terminal 712, which are electrically connected to the direct current 5V power supply port and the direct current 6V power supply port, respectively, where the 5V voltage input terminal 711 obtains a voltage stabilizing voltage 5V through the first power supply filtering network 71 and is divided into a plurality of independent power supply branches to supply power to a plurality of chips of the transmitting channel, and the 6V voltage input terminal 712 obtains a voltage stabilizing voltage 6V through the second power supply filtering network 72 to supply power to the radio frequency power amplifier 75 in the transmitting channel. The power supply circuit can provide independent power supply branches for a plurality of chips in the transmitting channel module, so that the chips with radio frequency characteristics cannot generate mutual interference of power supply, and electromagnetic compatibility is enhanced.
Further preferably, as shown in fig. 13, the power supply circuit includes a first power supply branch, the first power supply branch includes an inductor L10 electrically connected to the voltage stabilizing 5V, another end of the inductor L10 is connected in series with a resistor r38=6.8Ω, and simultaneously is also connected in parallel with a capacitor C87, c87=1uf, another end of the capacitor C87 is grounded, another end of the resistor R38 is electrically connected to capacitors C88 and C33, and is electrically connected to a power supply end of a gain amplifying chip CHA3666 in the radio frequency channel circuit, so as to provide dc 4V power for the chip CHA 3666. The capacitor C88 and the capacitor C33 are connected in parallel, the capacitance values are 10uF, and the other ends of the capacitor C88 and the capacitor C33 are grounded.
Preferably, as shown in fig. 14, the power supply circuit includes a second power supply branch, the second power supply branch includes an inductor L11 electrically connected to the voltage stabilizing 5V, the other end of the eleventh inductor L11 is connected to a power supply end of a chip LTC1983ES6-5, the voltage output end of the chip LTC1983ES6-5 is electrically connected to an RC network (including resistors R35, R36 and a capacitor C83), and then is electrically connected to the 3 rd pin and the 2 nd pin of the chip AD8615AUJZ, and the 4 th pin of the chip AD8615AUJZ outputs a dc voltage of-0.55V and provides negative voltage power to a power amplifying chip TGA2533 in the radio frequency circuit of the transmitting channel.
Based on the above embodiment, the invention discloses a miniaturized ODU emission channel module, which comprises a box body and a box cover, wherein the box body comprises an upper cavity and a lower cavity which are isolated from each other, the upper cavity is provided with an intermediate frequency cavity for accommodating an intermediate frequency circuit, a radio frequency cavity for accommodating a radio frequency circuit, and a power supply cavity for accommodating a power supply circuit, the lower cavity is provided with a local oscillation circuit, the local oscillation circuit is connected into the radio frequency cavity through an insulator and a microstrip line with holes, the output local oscillation signal is mixed with the intermediate frequency signal output by the intermediate frequency circuit to obtain a radio frequency signal, and the radio frequency signal is amplified and filtered by the radio frequency circuit and then is input into a radio frequency cavity filter arranged in the upper cavity. The transmitting channel module has the advantages of small volume, low power consumption, stability, reliability and wide applicable frequency band range.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the present invention and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A miniaturized ODU emission channel module, which comprises a box body and a box cover covering the box body, and is characterized in that,
the box body comprises an upper cavity and a lower cavity which are isolated from each other, and the box cover correspondingly comprises an upper box cover for covering the upper cavity and a lower box cover for covering the lower cavity;
the high-frequency power supply box comprises an upper cavity, a lower cavity, a reference source input port, an insulator, a perforated microstrip line, a radio frequency cavity, a power supply circuit and a local oscillator circuit, wherein the upper cavity is internally provided with the intermediate frequency cavity for accommodating the intermediate frequency circuit, the radio frequency cavity for accommodating the radio frequency circuit, the power supply cavity for accommodating the power supply circuit is internally provided with the local oscillator circuit, the outer wall of the box body is provided with the reference source input port, the reference source input port is electrically connected to the local oscillator circuit in the lower cavity, the local oscillator circuit is connected to the radio frequency cavity through the insulator and the perforated microstrip line, the insulator is electrically connected between the upper cavity and the lower cavity in a wall penetrating manner, the output local oscillator signal is mixed with the intermediate frequency signal output by the intermediate frequency circuit to obtain a radio frequency signal, and the radio frequency signal is input to a radio frequency cavity filter arranged in the upper cavity after being amplified and filtered by the radio frequency circuit.
2. The miniaturized ODU emission channel module of claim 1 wherein the intermediate frequency cavity is disposed on a left portion of the upper cavity, the power supply cavity is disposed on a right side of the intermediate frequency cavity and is in power supply connection with the intermediate frequency cavity, the radio frequency cavity is of an inverted-L configuration and is disposed on a lower side of the intermediate frequency cavity and on a right side of the power supply cavity, and the cavity filter is disposed on an upper portion of the upper cavity and on upper sides of the intermediate frequency cavity, the power supply cavity, and the radio frequency cavity.
3. The miniaturized ODU transmission channel module of claim 2 wherein a power port, an intermediate frequency signal input port are provided on an outer wall of the box on a left side adjacent to the intermediate frequency cavity, and a radio frequency signal output port is provided on an outer wall of the box on an upper side adjacent to the cavity filter; the power port is electrically connected to the power circuit in the power cavity, the intermediate frequency signal input port is electrically connected to the intermediate frequency circuit of the intermediate frequency cavity, and the radio frequency signal output port is communicated with the cavity filter.
4. The miniaturized ODU transmission channel module of claim 3 wherein the radio frequency circuitry is divided into a lateral branch and a vertical branch, the lateral branch comprising a mixer, a first stage radio frequency filter, a first stage radio frequency gain amplifier, and the vertical branch comprising a second stage radio frequency filter, a second stage radio frequency gain amplifier, and a radio frequency power amplifier, the first stage radio frequency gain amplifier and the second stage radio frequency filter being electrically connected by a turn microstrip line.
5. The miniaturized ODU transmission channel module of claim 4 wherein the local oscillator circuit comprises a frequency synthesizer, a frequency multiplier, a local oscillator amplifier, and a local oscillator filter connected in series in sequence, the frequency synthesizer is electrically connected with the reference source input port, an external reference source inputs a reference frequency signal to the frequency synthesizer through the reference source input port, a numerical control interface of the frequency synthesizer is correspondingly electrically connected with a single chip microcomputer, the single chip microcomputer inputs frequency control parameters to the frequency synthesizer through the numerical control interface, the frequency multiplier performs frequency doubling on a signal output by the frequency synthesizer to generate a local oscillator signal with a required frequency, then the local oscillator amplifier performs power amplification on the local oscillator signal, and then the local oscillator filter performs suppression filtering on the local oscillator signal.
6. The miniaturized ODU transmission channel module of claim 5 wherein the radio frequency cavity comprises the perforated microstrip line connected to an output of the frequency multiplier, wherein the perforated end is electrically connected to an output of the frequency multiplier located in the lower cavity via the insulator and the other end is electrically connected to an input of the local oscillator amplifier, an output of the local oscillator amplifier is electrically connected to the local oscillator filter, and an output of the local oscillator filter is electrically connected to the mixer.
7. The miniaturized ODU transmit channel module of claim 6 wherein the intermediate frequency circuitry comprises a temperature compensation attenuator, a first stage intermediate frequency filter, a first stage intermediate frequency amplifier, a second stage intermediate frequency amplifier, and a second stage intermediate frequency filter in cascade, the second stage intermediate frequency filter being electrically connected to the mixer.
8. The miniaturized ODU transmit channel module of claim 7 wherein the power supply ports comprise a dc 5V power supply port and a dc 6V power supply port, the power supply circuitry comprises a 5V voltage input and a 6V voltage input that are electrically connected to the dc 5V power supply port and the dc 6V power supply port, respectively, the 5V voltage input is subjected to a first power filter network to obtain a regulated voltage of 5V and is divided into a plurality of independent power supply branches to supply power to the plurality of chips of the transmit channel module, respectively, and the 6V voltage input is subjected to a second power filter network to obtain a regulated voltage of 6V to supply power to the radio frequency power amplifier in the radio frequency circuitry.
9. The miniaturized ODU transmission channel module of claim 8 wherein the local oscillator filter is a local oscillator microstrip filter.
10. The miniaturized ODU transmission channel module of claim 9 wherein the first stage radio frequency filter and the second stage radio frequency filter are structurally identical radio frequency microstrip filters.
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| CN212485510U (en) * | 2020-05-29 | 2021-02-05 | 京信通信技术(广州)有限公司 | Phase shifter of integrated feeder and antenna using same |
| CN114204956B (en) * | 2021-12-08 | 2023-06-16 | 江苏屹信航天科技有限公司 | Miniaturized multifrequency section communication all-in-one |
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