CN109110727B - Packaging method of high-overload micro-mechanical inertial sensor - Google Patents
Packaging method of high-overload micro-mechanical inertial sensor Download PDFInfo
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- CN109110727B CN109110727B CN201810820595.3A CN201810820595A CN109110727B CN 109110727 B CN109110727 B CN 109110727B CN 201810820595 A CN201810820595 A CN 201810820595A CN 109110727 B CN109110727 B CN 109110727B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
Abstract
The invention belongs to the field of micro-mechanical inertial sensor packaging, and particularly relates to a packaging method of a high-overload micro-mechanical inertial sensor. The invention eutectic welds the sensitive element of the micromechanical inertial sensor to the round end face of the monocrystalline silicon packaging structure, the round end face of the structure is connected with the rectangular end face through the elastic beam, the rectangular end face of the structure is connected with the ceramic tube shell in a bonding mode, and finally the ceramic tube shell is welded with the pin of the substrate, thus realizing the packaging of the high-overload micromechanical inertial sensor.
Description
Technical Field
The invention belongs to the field of micro-mechanical inertial sensor packaging, and particularly relates to a packaging method of a high-overload micro-mechanical inertial sensor.
Background
The micro-mechanical inertial sensor can generally measure the angular rate and the acceleration of a carrier in an inertial space, so that the multi-axis combination of the micro-mechanical inertial sensor is widely applied to the fields of inertial navigation and guidance. High overload micromechanical inertial sensors typically require measurement of angular velocity and acceleration of the inertial space after being subjected to a shock of greater acceleration before operation begins. However, the sensitive structure of the inertial sensor is very fragile, and the sensor can be damaged and failed due to slightly larger impact and overload, so that the conventional high-precision inertial sensor is difficult to work normally under the condition of high overload, and the application range of the micro-mechanical inertial sensor in the fields of inertial navigation and guidance is severely limited.
Disclosure of Invention
In view of the above-mentioned situation in the prior art, an object of the present invention is to provide a method for packaging a high-overload micromechanical inertial sensor, wherein the high-overload micromechanical inertial sensor packaged by the method of the present invention has strong overload resistance, small volume and simple structure.
The above object of the present invention is achieved by the following technical solutions:
a method of packaging a high overload micromachined inertial sensor, comprising: the method comprises the steps of manufacturing a packaging structure for a high overload inertial micro-mechanical sensor by adopting a monocrystalline silicon wafer, etching a shallow cavity on one surface of the monocrystalline silicon wafer to form a rectangular end face connected with a ceramic tube shell, plating a metal layer on the other surface, continuously manufacturing an elastic beam structure on the surface of the monocrystalline silicon wafer, wherein the metal layer area is a circular end face to be connected with a sensitive element of the inertial sensor, the elastic beam structure is connected with the rectangular end face and the circular end face, the rectangular end face and the circular end face are parallel to each other, and the rectangular end face is higher than the circular end. And then plating a metal layer on the bottom surface of the sensitive element of the inertial sensor, wherein the area of the metal layer is the same as that of the circular end surface. And then aligning the sensitive element of the inertial sensor with the circular end face, performing eutectic welding connection, and bonding the rectangular end face to the bottom of the ceramic tube shell. And finally, welding the ceramic tube shell and the pins of the substrate to complete the packaging of the high-overload micro-mechanical inertial sensor.
Wherein the monocrystalline silicon material is P-type high-resistance monocrystalline silicon.
Since gold is often used as the eutectic solder material, the material of the metal layer is preferably gold.
Wherein the rectangular end face is 30-100 microns higher than the circular end face, preferably about 50 microns.
The packaging method can reduce the influence of external impact and overload on the inertial sensor, prevent the sensitive structure of the inertial sensor from being damaged, and ensure that the performance of the inertial sensor is not influenced. In addition, the packaging method can avoid the step of arranging a damping structure on the application carrier, and greatly reduces the application limit of the micro-mechanical inertial sensor in a high-overload environment.
Drawings
Fig. 1 is a schematic diagram of the overall packaging of a high overload micromachined inertial sensor according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a high overload micromachined inertial sensor package structure according to an embodiment of the present invention;
fig. 3 is a side view of a high overload micromachined inertial sensor package structure according to an embodiment of the present invention.
Detailed Description
For a clearer understanding of the objects, technical solutions and advantages of the present invention, the method for packaging a high overload micromechanical inertial sensor according to the present invention is further described below with reference to the accompanying drawings and embodiments.
Fig. 1 is a schematic diagram of a high overload micromachined inertial sensor package implemented using the present invention. As shown in fig. 1, 1 is a sensitive element of the micro-mechanical inertial sensor, 2 is a package structure for carrying the sensitive element, 3 is a ceramic package, and 4 is a mounting substrate. The sensitive element 1 of the micromechanical inertial sensor is eutectic-welded to the central circular end face of the packaging structure 2, the rectangular end face of the bottom of the packaging structure 2 is adhered to the bottom face of the ceramic tube shell 3, and finally the pin of the ceramic tube shell 3 is welded to the mounting substrate 4.
Fig. 2 is a schematic diagram of a package structure used in the present invention. As shown in fig. 2, 2-1a, 2-1b,2-1c, 2-1d are spring beam structures connecting rectangular end faces and circular end faces.
Fig. 3 is a side view of a package structure used in the present invention. As shown in fig. 3, 2-3 is a circular end face and 2-2 is a rectangular end face.
The method comprises the following specific implementation steps:
the first step is as follows: a monocrystalline silicon wafer is adopted to manufacture a packaging structure for a high overload inertia micromechanical sensor, a photoetching manufacturing pattern is carried out on one surface of the packaging structure, shallow cavity etching is carried out according to the manufactured pattern, dry etching or wet etching can be used as an etching method, and wet etching is generally preferred according to specific process, so that a rectangular end face 2-2 connected with a ceramic tube shell is formed.
The second step is that: on the other side, the gold-plated area is the circular end face 2-3 to be coupled with the sensitive element of the inertial sensor, the metal layer plating method can use evaporation or sputtering method, sputtering method is generally preferred, and gold is used as the plating material because gold is commonly used as eutectic soldering material, and other materials can be used as the possible case.
The third step: and continuously photoetching the surface to manufacture an elastic beam pattern, and performing dry etching according to the manufactured pattern to release the elastic beam structures 2-1a, 2-1b,2-1c and 2-1d and the circular end surface 2-3. The two end faces of the rectangular end face 2-2 and the circular end face 2-3 are parallel to each other and have a certain height difference, and the rectangular end face 2-2 is higher than the circular end face 2-3, and the height difference is determined according to the specific process and is generally 30-100 micrometers, preferably about 50 micrometers.
The fourth step: and plating a metal layer with a certain thickness on the bottom surface of the sensitive element 1 of the inertial sensor, wherein the area of the metal layer plated area is the same as the circular end surface of the packaging structure. And aligning the metal coating layer area of the sensitive element of the inertial sensor with the circular end face of the packaging structure, and performing eutectic bonding.
The fifth step: and adhering the rectangular end face 2-2 of the packaging structure to the bottom of the ceramic tube shell 3 by using epoxy resin. And finally, welding the ceramic tube shell and the pins of the substrate 4 to finish the packaging of the high-overload micro-mechanical inertial sensor.
Claims (4)
1. A method of packaging a high overload micromachined inertial sensor, comprising:
firstly, a monocrystalline silicon wafer is adopted to manufacture a packaging structure for a high overload inertial micro-mechanical sensor, one surface of the wafer is subjected to shallow cavity etching to form a rectangular end surface connected with a ceramic tube shell, the other surface is plated with a metal layer, the metal layer area is a circular end surface to be connected with the inertial sensor, an elastic beam structure is continuously manufactured on the surface, the elastic beam structure is connected with the rectangular end surface and the circular end surface, the rectangular end surface and the circular end surface are parallel to each other, and the rectangular end surface is higher than the circular end surface, wherein the elastic beam structure comprises a pair of linear outer elastic beams (2-1a, 2-1d), a pair of linear inner elastic beams (2-1b,2-1c) and a transition frame, the directions of the pair of outer elastic beams (2-1a, 2-1d) are consistent, and one ends of the pair of outer elastic beams are, the other end of the elastic beam is connected with the transition frame, the directions of the pair of inner elastic beams (2-1b,2-1c) are consistent and are vertical to the directions of the pair of outer elastic beams (2-1a, 2-1d), and one end of each elastic beam is connected with the transition frame while the other end is connected with the round end face;
then plating a metal layer on the bottom surface of the sensitive element of the inertial sensor, wherein the area of the metal layer is the same as that of the circular end surface;
aligning the sensing element of the inertial sensor with the round end face, performing eutectic welding connection, and then adhering the rectangular end face to the bottom of the ceramic tube shell;
and finally, welding the ceramic tube shell and the pins of the substrate to complete the packaging of the high-overload micro-mechanical inertial sensor.
2. The method of packaging a high overload micromachined inertial sensor of claim 1, wherein the single crystal silicon material is P-type high resistance single crystal silicon.
3. The method of packaging a high overload micromachined inertial sensor of claim 1, wherein the material of the metal layer is gold.
4. The method of packaging a highly overloaded micromechanical inertial sensor according to claim 1, wherein the rectangular end surface is 50 microns higher than the circular end surface.
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| CN109110727B true CN109110727B (en) | 2020-09-22 |
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| CN102590555A (en) * | 2011-11-23 | 2012-07-18 | 中国计量学院 | Resonance-force balance capacitance type three-axis acceleration transducer and manufacture method |
| CN102589762A (en) * | 2012-03-08 | 2012-07-18 | 西安交通大学 | Micro-voltage high-overload sensor chip of beam membrane single island structure |
| CN103364584A (en) * | 2012-03-31 | 2013-10-23 | 北京大学 | Piezoresistance type acceleration sensor containing silicon through holes and method for manufacturing same |
| US8573058B2 (en) * | 2009-02-24 | 2013-11-05 | Seiko Epson Corporation | Acceleration sensor and electronic device |
| CN104950137A (en) * | 2015-06-23 | 2015-09-30 | 西安电子科技大学 | Transverse sensitive acceleration sensor chip having stress isolation structure |
| CN107055461A (en) * | 2016-10-21 | 2017-08-18 | 西北工业大学 | A kind of SOI bases micro-inertia sensor encapsulation stress partition method |
| CN107290567A (en) * | 2017-05-18 | 2017-10-24 | 中北大学 | Pressure resistance type 3-axis acceleration sensor and preparation method with anti-overload ability |
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2018
- 2018-07-24 CN CN201810820595.3A patent/CN109110727B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11248742A (en) * | 1998-03-03 | 1999-09-17 | Denso Corp | Accelerometer |
| CN1970431A (en) * | 2006-11-28 | 2007-05-30 | 中国科学院合肥物质科学研究院 | Mciromechanical two-dimensional obliquity sensor silicon chip and production method |
| US8573058B2 (en) * | 2009-02-24 | 2013-11-05 | Seiko Epson Corporation | Acceleration sensor and electronic device |
| CN102175305A (en) * | 2011-01-24 | 2011-09-07 | 中北大学 | Single chip integrated trivector vibration sensor |
| CN102435776A (en) * | 2011-10-20 | 2012-05-02 | 中北大学 | Single-chip integrated eight-beam-arm triaxial accelerometer |
| CN102590555A (en) * | 2011-11-23 | 2012-07-18 | 中国计量学院 | Resonance-force balance capacitance type three-axis acceleration transducer and manufacture method |
| CN102589762A (en) * | 2012-03-08 | 2012-07-18 | 西安交通大学 | Micro-voltage high-overload sensor chip of beam membrane single island structure |
| CN103364584A (en) * | 2012-03-31 | 2013-10-23 | 北京大学 | Piezoresistance type acceleration sensor containing silicon through holes and method for manufacturing same |
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| CN107290567A (en) * | 2017-05-18 | 2017-10-24 | 中北大学 | Pressure resistance type 3-axis acceleration sensor and preparation method with anti-overload ability |
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