CN107055461B - A kind of SOI base micro-inertia sensor encapsulation stress partition method - Google Patents
A kind of SOI base micro-inertia sensor encapsulation stress partition method Download PDFInfo
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- CN107055461B CN107055461B CN201610919522.0A CN201610919522A CN107055461B CN 107055461 B CN107055461 B CN 107055461B CN 201610919522 A CN201610919522 A CN 201610919522A CN 107055461 B CN107055461 B CN 107055461B
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- cylinder
- stress
- inertia sensor
- layer
- soi base
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000005192 partition Methods 0.000 title claims abstract description 10
- 238000002955 isolation Methods 0.000 claims abstract description 16
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 3
- 230000005611 electricity Effects 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 7
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Gyroscopes (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a kind of SOI base micro-inertia sensor encapsulation stress partition methods, belong to micro electro mechanical system field.This method is realized by a kind of stress isolation structure being located on basal layer (3), the stress isolation structure type are as follows: substrate (3) is an engraved structure, it includes periphery for fixing the spring beam (5) of the frame (4) of sensitive structure layer (1), the cylinder (6) in chip center and connection framework (4) and cylinder (6)；Bottom surface (9) gluing that entire SOI base micro-inertia sensor only passes through the cylinder (6) is Nian Jie with shell.The utility model has the advantages that the bottom surface (9) of cylinder (6) is smaller than chip sensitive structure layer (1) area, therefore the bond area of sensor is reduced, reduces encapsulation stress；Spring beam (5) further decreases the stress that gyroscope structure layer (1) is transferred to by cylinder (6), play the role of stress isolation, the stress isolation structure does not have an impact chip sensitive structure simultaneously, reduces chip sensitive structure design difficulty.
Description
Technical field
The present invention relates to a kind of SOI base micro-inertia sensor encapsulation stress partition methods, belong to micro electro mechanical system field.
Background technique
Silicon-on-insulator (SOI) refers to a kind of semiconductor material with " silicon/insulator/silicon " three-decker.Based on SOI
Technology can realize the mechanical structure of high-aspect-ratio and processing technology is simple, be widely used in making various MEMS device.
Inertial sensor be detection and measurement acceleration, inclination, shock and vibration, rotation and multifreedom motion sensing
Device is the important component for solving navigation, orientation and motion carrier control.Micro-inertia sensor mainly includes micromechanical gyro and micro-
Accelerometer etc. has been widely used for the fields such as military weapon, auto industry and consumer electronics.Micro-inertia sensor chip manufacture
After the completion, it needs to be vacuum-sealed in ceramics or Can, to guarantee its normal work.Sensor chip is usually used when encapsulating
Silver paste or solder are bonded on shell substrate, this process is usually along with biggish temperature change.When the temperature is changed, due to
Chip silicon materials and envelope material thermal expansion coefficient mismatch, and chip can generate biggish encapsulation stress, and then cause chip knot
The drift of structure resonance frequency, reduces sensor stability, even results in sensor failure.
To solve the above-mentioned problems, California, USA university Irving branch school Brenton R.Simon et al. is in its paper: "
Intrinsic stress of eutectic Au/Sn die attachment and effect on mode-matched
A kind of scheme that micro-inertia sensor encapsulation stress is reduced by reduction solder area is proposed in MEMS gyroscopes ".
Since encapsulation stress is proportional to bond area between chip and shell, reducing solder area be can reduce between chip and shell
Bond area, and then reduce the encapsulation stress for being transmitted to sensor core on piece.In die bonding, solder flowing is easy the program
Cause bonding region in irregular shape, cause chip package stress distribution uneven, reduces the performance of sensor.
Summary of the invention
Existing cause chip package stress distribution non-uniform by reducing solder area to overcome to reduce encapsulation stress
Deficiency, the present invention propose a kind of SOI base micro-inertia sensor encapsulation stress partition method.This method passes through a specific stress
Isolation structure also ensures the equal of encapsulation stress distribution while reducing the encapsulation stress being transmitted on transducer sensitive structure
Even property.
A kind of SOI base micro-inertia sensor encapsulation stress partition method proposed by the present invention, refering to fig. 1, the sensing
Device includes three-decker: sensitive structure layer 1, electricity isolated layer 2 and basal layer 3.It is characterized in that, the encapsulation stress partition method is logical
It crosses a kind of stress isolation structure on basal layer 3 to realize, referring to Fig.2, the stress isolation structure are as follows: the substrate 3 is
One engraved structure comprising peripheral frame 4, the cylinder 6, Yi Jilian in chip center for fixing sensitive structure layer 1
Connect the spring beam 5 of frame 4 and cylinder 6；Entire SOI base micro-inertia sensor only passes through 9 gluing of bottom surface and shell of the cylinder 6
Bonding.
Further, refering to Fig. 3, the solder flowed when to prevent die bonding is Nian Jie with shell by spring beam 5, spring beam
5 bottom surface 8 is lower than the bottom surface 9 of cylinder 6 and the bottom surface 7 of frame 4.
The beneficial effects of the present invention are: the bottom surface 9 of cylinder 6 is smaller than chip sensitive structure 1 area of layer, therefore reduce sensing
The bond area of device, reduces encapsulation stress；The bottom surface 8 that cylinder 6 is located at chip center and spring beam 5 is lower than the bottom surface of cylinder 6
9, it prevents the solder flowed when die bonding that spring beam 5 is Nian Jie with shell, guarantees that encapsulation stress is uniformly distributed；Spring beam 5 makes
It is further decreased by the stress that cylinder 6 is transferred to gyroscope structure layer 1, plays the role of stress isolation；Spring beam 5 is symmetrical, protects
Demonstrate,prove the uniformity of encapsulation stress transmitting.Entire stress isolation structure is located at soi wafer basal layer, therefore the stress isolation knot simultaneously
Structure does not have an impact chip sensitive structure, reduces chip sensitive structure design difficulty.
Detailed description of the invention
Fig. 1 is the micro-inertia sensor perspective view of the explosion in embodiment based on SOI；
Fig. 2 is the micro-inertia sensor stress isolation structure front schematic view in embodiment based on SOI；
Fig. 3 is the micro-inertia sensor stress isolation structure floor schematic diagram in embodiment based on SOI.
In figure, 1- sensitive structure layer, 2- electricity isolated layer, 3- basal layer, 4- frame, 5- spring beam, 6- cylinder, 7- frame 4
Bottom surface, the bottom surface of 8- spring beam 5, the bottom surface of 9- cylinder 6.
Specific embodiment
Micro-inertia sensor encapsulation stress isolation scheme proposed by the present invention is based on SOI technology.Refering to fig. 1, the biography
Sensor includes three-decker: sensitive structure layer 1, with a thickness of 60 μm, electricity isolated layer 2, with a thickness of 4 μm and basal layer 3, with a thickness of
400μm.The structure for playing stress isolation in the program is located on basal layer 3, referring to Fig.2, its structure includes: with a thickness of 400 μ
The frame 4 for fixing gyroscope structure layer 1 of m, with a thickness of 400 μm, diameter is 2000 μm, the cylinder 6 Nian Jie with shell, and
With a thickness of 350 μm, width is 200 μm, eight L shape spring beams 5 for connection framework 4 and cylinder 6.Refering to Fig. 3, spring beam
5 bottom surface 8 is than the bottom surface 9 of cylinder 6 and 7 low 50 μm of the bottom surface of frame 4.When sensor chip encapsulates, the bottom surface 9 of cylinder 6 is applied
Glue is Nian Jie with shell.
Claims (2)
1. a kind of SOI base micro-inertia sensor encapsulation stress partition method, the sensor includes three-decker: sensitive structure
Layer (1), electricity isolated layer (2) and basal layer (3)；It is characterized in that, the encapsulation stress partition method is located at basal layer by a kind of
(3) the stress isolation structure realization on, the stress isolation structure type are as follows: basal layer (3) is an engraved structure comprising outer
That encloses is used to fix the frame (4) of sensitive structure layer (1), the cylinder (6) in chip center and connection framework (4) and circle
The spring beam (5) of column (6)；Entire SOI base micro-inertia sensor only passes through bottom surface (9) gluing of the cylinder (6) and shell glues
It connects.
2. a kind of SOI base micro-inertia sensor encapsulation stress partition method as described in claim 1, which is characterized in that described
The bottom surface (8) of spring beam (5) is lower than the bottom surface (9) of cylinder (6) and the bottom surface (7) of frame (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610919522.0A CN107055461B (en) | 2016-10-21 | 2016-10-21 | A kind of SOI base micro-inertia sensor encapsulation stress partition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610919522.0A CN107055461B (en) | 2016-10-21 | 2016-10-21 | A kind of SOI base micro-inertia sensor encapsulation stress partition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107055461A CN107055461A (en) | 2017-08-18 |
| CN107055461B true CN107055461B (en) | 2018-12-18 |
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| CN201610919522.0A Expired - Fee Related CN107055461B (en) | 2016-10-21 | 2016-10-21 | A kind of SOI base micro-inertia sensor encapsulation stress partition method |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109110727B (en) * | 2018-07-24 | 2020-09-22 | 中国航空工业集团公司西安飞行自动控制研究所 | Packaging method of high-overload micro-mechanical inertial sensor |
| CN109387225B (en) * | 2018-10-15 | 2021-03-26 | 北京航天控制仪器研究所 | MEMS inertial device and stress-free electric fitting method thereof |
| CN115235515B (en) * | 2022-09-20 | 2023-04-14 | 冰零智能科技(常州)有限公司 | Sensor and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820814A (en) * | 2007-10-11 | 2010-09-01 | 霍尼韦尔国际公司 | Be used to improve the isolated sensor geometry of encapsulation stress |
| CN201598171U (en) * | 2010-03-05 | 2010-10-06 | 南京理工大学 | Stress isolated MEMS inertial sensor packaging structure |
| CN102435776A (en) * | 2011-10-20 | 2012-05-02 | 中北大学 | Single-chip integrated eight-beam-arm triaxial accelerometer |
| CN102482072A (en) * | 2009-08-26 | 2012-05-30 | 飞思卡尔半导体公司 | Mems device with stress isolation and method of fabrication |
| CN104817051A (en) * | 2015-05-06 | 2015-08-05 | 歌尔声学股份有限公司 | MEMS (Micro Electro Mechanical System) inertial sensor with stress isolation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8610222B2 (en) * | 2011-04-18 | 2013-12-17 | Freescale Semiconductor, Inc. | MEMS device with central anchor for stress isolation |
-
2016
- 2016-10-21 CN CN201610919522.0A patent/CN107055461B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820814A (en) * | 2007-10-11 | 2010-09-01 | 霍尼韦尔国际公司 | Be used to improve the isolated sensor geometry of encapsulation stress |
| CN102482072A (en) * | 2009-08-26 | 2012-05-30 | 飞思卡尔半导体公司 | Mems device with stress isolation and method of fabrication |
| CN201598171U (en) * | 2010-03-05 | 2010-10-06 | 南京理工大学 | Stress isolated MEMS inertial sensor packaging structure |
| CN102435776A (en) * | 2011-10-20 | 2012-05-02 | 中北大学 | Single-chip integrated eight-beam-arm triaxial accelerometer |
| CN104817051A (en) * | 2015-05-06 | 2015-08-05 | 歌尔声学股份有限公司 | MEMS (Micro Electro Mechanical System) inertial sensor with stress isolation |
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| CN107055461A (en) | 2017-08-18 |
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| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Yuan Weizheng Inventor after: Hao Yongcun Inventor after: Xie Jianbing Inventor after: Chang Honglong Inventor before: Chang Honglong Inventor before: Hao Yongcun Inventor before: Xie Jianbing Inventor before: Yuan Weizheng |
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Granted publication date: 20181218 |