CN109082623A - A kind of production method of dry etching lower electrode surface salient point - Google Patents
A kind of production method of dry etching lower electrode surface salient point Download PDFInfo
- Publication number
- CN109082623A CN109082623A CN201810840857.2A CN201810840857A CN109082623A CN 109082623 A CN109082623 A CN 109082623A CN 201810840857 A CN201810840857 A CN 201810840857A CN 109082623 A CN109082623 A CN 109082623A
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- Prior art keywords
- lower electrode
- salient point
- electrode surface
- production method
- dry etching
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
Abstract
The invention discloses a kind of production method of dry etching lower electrode surface salient point, include the following steps: Step 1: making shielding plate according to the distribution of lower electrode salient point and size；Step 2: shielding plate is bonded with lower electrode surface, by the lower electrode surface sand-blasting between adjacent shielding plate to form lower electrode pothole；Step 3: ceramic coated powder easily forms lower electrode surface salient point in pothole.Pothole is ground compared to plasma-based meltallizing after former masking, machining and bonds out salient point, machining is ground out the production method of salient point and quick and easy, short time limit, at low cost, yield is wanted to improve.
Description
Technical field
The invention belongs to the electrode plate technical field of regeneration of dry etching equipment, and in particular to a kind of dry etching lower part electricity
The production method of pole surface salient point.
Background technique
Dry etching making technology is widely applied panel and semiconductor industry at present.Processing procedure is shown in liquid crystal display panel
In, dry etching equipment has extremely important effect.Dry etching chamber equipment includes: power supply, air inlet, control unit, upper electrode,
Lower electrode, cooling gas and vacuum pump.Glass substrate, which is placed on, to be performed etching on lower electrode.Upper electrode surface is covered with
Uniform perforation gas orifice, for being uniformly distributed etching gas, lower electrode surface is furnished with the stomata of perforation, to be passed through helium
Gas, cooling glass.Glass be during the entire process of etching by lower electrode system electrostatic chuck (ESC) adsorb it is securing,
It is passed through gas from air inlet, reaction gas passes through upper electrode gas orifice, between upper electrode and lower electrode, upper/lower electrode
Between apply 13.56MHz RF, convert plasma for the indoor gas of reaction chamber and be passed through radio frequency to electrostatic chuck,
Radio frequency can be formed DC bias (Dc bias) on chip, facilitated plasma to the etching reaction of glass, realized to glass
Etching.
When carrying out dry etching, glass substrate is placed on lower electrode surface, after lower electrode is powered, close to lower electricity
Glass side, i.e., lower glass surface generate induction negative electrical charge, formed between the positive charge of tungsten layer and the negative electrical charge below glass
Coulomb attraction force avoids glass substrate drift in etching so that glass be fixed, and glass baseplate surface is directly and reaction chamber
Interior plasma is reacted.In the helium hole of the specific spacing of lower electrode, it is passed through helium from lower part, in glass and lower electricity
Between form thermal convection, the temperature of control base board so that each position etch rate of glass is uniform.
Existing dry etching lower electrode (electrostatic attraction board) production method is to be formed on aluminium using ceramic meltallizing
High dielectric ceramic layer, and masking (masking) then is passed in ceramic layer, salient point is formed in the way of plasma-based meltallizing；
This mode formulates masking, and the duration is longer, and more masking choice of material are difficult, and temperature distortion, fitting be not close and residual
The problems such as remaining glue, self weight, all exists many bad in use；Another aspect plasma-based meltallizing board is expensive, and cost of manufacture mentions
It is high；Another mode is that pothole directly is ground in ceramic layer on surface machining, is made using ceramic powders big with pothole
The sticky glue of the ceramic particle is fixed in hole and salient point is made by the small quite, spherical particle of 2 times of height；There are also a kind of sides
Formula is to be ground to form protrusion in a manner of being machined grinding, and uniformity is poor, and yield is not high.
Summary of the invention
The present invention provides a kind of production method of dry etching lower electrode surface salient point, it is therefore an objective to so that lower electrode table
The production method of face salient point is faster, conveniently, and at low cost, yield improves.
To achieve the goals above, the technical scheme adopted by the invention is as follows:
A kind of production method of dry etching lower electrode surface salient point, includes the following steps:
Step 1: making shielding plate according to the distribution of lower electrode salient point and size；
Step 2: shielding plate is bonded with lower electrode surface, by under (after the shielding plate) between adjacent shielding plate
Portion's electrode surface sandblasting is to form lower electrode surface pothole；
Step 3: ceramic coated powder easily forms lower electrode surface salient point in pothole.
The shielding plate is that the gummed paper of polyamide material or stainless steel thin slice are cut out.
Seam between adjacent shielding plate passes through the non-porous gummed paper fitting of strip polyamide.
Sandblasting uses the Alundum of 180~230 mesh in the step 2, and blasting pressure is 0.3~0.4Mpa, and sandblasting is high
Degree be 400~450mm, shot blast cabinet away from be 3~5mm, sandblasting speed be 800mm/sec, sandblasting number 1~2 time.
Use pressure for the compressed air of 0.2Mpa by after sandblasting lower electrode pothole and surface dry up.
Ceramic coated powder uses AI in the step 32O3Powder, spray power are 28.8~31.2kw, spray main gas
For argon gas, auxiliary gas is helium, and carrier gas is argon gas, and the pressure of main gas, auxiliary gas and carrier gas is respectively 0.344~0.379MPa, 0.344
~0.413MPa and 0.344~0.379MPa, spraying height be 100~120mm, spray sweep span 2mm, speed be 800~
850mm/sec, number 2~3 times.
Ceramic coated powder uses Y in the step 32O3Powder, spray power are 28~30KW, and main gas is argon, auxiliary gas
For helium, carrier gas is argon, the pressure of main gas, auxiliary gas and carrier gas be respectively 0.344~0.448Mpa, 0.345~0.379Mpa and
0.137~0.276MPa, spray distance are 120~130mm, and spraying sweep span is set as 2mm, spraying rate is 900~
1200mm/sec。
The production method include thes steps that removing shielding plate, cleaning and drying to lower electrode.
The cleaning is cleaned using giant, and the hydraulic pressure of giant is 0.25~0.3Mpa, and muzzle is under
The height of portion's electrode surface is 50~60cm, then the non-dust cloth wiping lower electrode side soaked later using isopropanol is adopted
The lower electrode back side is wiped with the non-dust cloth that ethyl alcohol soaks, after all faces clean up, with the secondary punching of above-mentioned giant
It washes.
The drying is the lower electrode after rinsing, and using the moisture on compressed air drying surface, is sent into later
It is dried for 24 hours in baking oven.
Compressed air preferably uses CDA gas.
Beneficial effects of the present invention: pothole is ground compared to plasma-based meltallizing after former masking, machining and bonds out
The production method that salient point, machining are ground out salient point wants quick and easy, short time limit, at low cost, yield raising.Side of the present invention
Just forming salient point extends the service life of electrode plate semi-permanently, can be to it if especially salient point is damaged by locality
It is regenerated after damaged portion removing, greatly reduces the expense of maintenance, shorten the production duration.The method makes convex
Point so that unloaded after glass etching the glass being adsorbed be not easy slide plate, scratch, Mura is bad etc. substantially reduces, improve etching
Yields increases service life in equipment aspect, for example, thermal spraying treatment and cleaning etc., according to electrode plate service condition, surface
Band salient point (emboss) electrode plate for carrying out surface regeneration or completely regeneration and being formed.
Detailed description of the invention
This specification includes the following drawings, and shown content is respectively:
Fig. 1 is lower electrode structural schematic diagram；
Fig. 2 is lower electrode setting shielding plate structural schematic diagram；
Fig. 3 is that sandblasting forms pothole structural schematic diagram；
Fig. 4 is that lower electrode removes shielding plate formation bump structure schematic diagram.
In the figure, it is marked as
1, lower electrode, 2, shielding plate, the 11, first insulating layer, 12, conductive layer, 13, second insulating layer, 14, side insulation
Layer, 15, salient point.
Specific embodiment
Below against attached drawing, by the description of the embodiment, making to a specific embodiment of the invention further details of
Explanation, it is therefore an objective to those skilled in the art be helped to have more complete, accurate and deep reason to design of the invention, technical solution
Solution, and facilitate its implementation.
As shown in Figures 1 to 4, lower electrode 1 is sandwich structure, stainless steel or aluminium base top by from the bottom up according to
It is secondary to be, the first insulating layer 11, conductive layer 12, second insulating layer 13；In addition, there are also extend to conductive layer DC from substrate lower end plane
Port (DC power supply terminal) applies direct current to DC port, and induction negative electrical charge, tungsten layer (conductive layer) can be generated below glass
Positive charge and glass below negative electrical charge form electrostatic attraction, adsorb fixed glass substrate.Wherein the first insulating layer 11 and
Side insulation layer 14 is insulated between conductive layer 12 and substrate, and second insulating layer 13 is used for together with all side insulation layers 14
External Insulation and support glass substrate.Electrostatic chuck often can not fully remove glass and electrostatic card when discharging glass
Electrostatic charge on disk, there is also residual stress between chip and electrostatic chuck, if thimble on electrostatic chuck, due to electrostatic force
Greatly, after etching, the charge of glass surface cannot rapidly discharge.And face is evenly distributed with salient point over the second dielectric, reaches more
Good cooling effect, while quick release charge, preferably unload glass, avoiding electrostatic force greatly causes flake bad.Production side
Method step includes the first insulating layer coating (0.45~0.65mm of coating film thickness), electrode layer coating (coating film thickness 0.03
~0.08mm), second insulating layer coating (0.35~0.65mm of coating film thickness), salient point coating (highly for 0.02~
0.05mm) production method, using ceramic powders meltallizing Jing Guo sandblasting alloy aluminium or stainless steel surface, formed high absolutely
Edge ceramic layer, thereon meltallizing conductive layer, top layer's meltallizing high-insulativity ceramic layer.Finally protected by mask plate, and
Specific position, sandblasting form pothole, and meltallizing ceramics form salient point.This mode is complete regenerated production method, if only needed
Upper layer is replaced, then updating from top layer (second insulating layer) is surface regeneration, replaces second insulating layer and salient point.
The production method of dry etching lower electrode surface salient point is specific as follows:
One, it the preparation of shielding plate: according to the designed salient point distribution of dry etching lower electrode, size, uses in advance
Drawing cutter makes masking (masking) piece, masking piece can choose polyamide material gummed paper (0.08~
It 0.20mm), can be with high temperature resistant.Stainless steel plate (0.1~0.4mm) can also be chosen, it is customized corresponding out according to drawing
Masking piece, in order to more accurately position, easily attach and remove, it is big masking piece can be divided in the form of nine grids
It is small.If when fitting, with having, than aperture, slightly larger, concentric circles high temperature resistant Double-face gummed paper will not using stainless steel plate masking
Rust steel masking piece and lower electrode fitting.
Two, sandblasting: progress masking first is combined closely with the masking piece made in upper electrode surface, phase
Seam between adjacent masking piece is bonded with the non-porous masking gummed paper of strip polyamide, avoids spray more.Fitting terminates, into
The artificial white fused alumina of 180~230 purposes, 0.3~0.4Mpa of blasting pressure, sandblasting 400~450mm of height, sandblasting are taken in row sandblasting
3~5mm of spacing, sandblasting speed are set as 800mm/sec, and sandblasting number 1~2 time.Sandblasting terminates, and the CDA with 0.2Mpa pressure is (clean
Only dry compressed air) gas blows clean sandblasting rear lower electrode pothole and surface.
Three, spray: the spraying of salient point can use AI2O3Powder and Y2O3Powder.
If salient point is sprayed according to AI2O3Powder, spray power are set as 28.8~31.2kw, and spraying main gas is argon gas, auxiliary gas
For helium, carrier gas is argon gas, and the pressure of main gas, auxiliary gas and carrier gas is respectively 0.344~0.379MPa, 0.344~0.413MPa
With 0.344~0.379MPa, spraying highly 100~120mm, spacing 2mm, speed are set as 800~850mm/sec, number 2~3
It is secondary.
Salient point is sprayed according to Y2O3Powder (characteristic is different, depending on requiring).Spray power is 28~30KW,
Main gas be argon, auxiliary gas be helium, carrier gas is argon, the pressure of main gas, auxiliary gas and carrier gas be respectively 0.344~0.448Mpa, 0.345~
0.379Mpa and 0.137~0.276MPa, spray distance are 120~130mm, and spraying sweep span is set as 2mm, and spraying rate is set
For 900~1200mm/sec.
Four, remove shielding plate: spraying terminates, and from the dismounting masking piece of side gently, is removed one by one.
Five, clean and dry: cleaning needs to carry out entire lower electrode cleaning, and lower electrode is carried out clearly with giant
It washes, hydraulic pressure is adjusted to 0.25~0.3Mpa, and for the distance of muzzle water outlet from 50~60cm of lower electrode surface, subsequent use has isopropanol
The non-dust cloth wiping lower electrode side soaked, then wipes the lower electrode back side, all faces using the non-dust cloth that ethyl alcohol soaks
It after cleaning up, is rinsed with giant mode as previously described, the use of height is 50~60cm after flushing, pressure is
The moisture on the CDA gas drying lower electrode surface of 0.2Mpa, is sent into baking oven after drying and dries for 24 hours.So far, ownership workmanship
Work terminates.
The production method of dry etching lower electrode surface salient point of the invention compare former masking after plasma-based meltallizing,
Machining is ground pothole and bonds out salient point, machining is ground out the production method of salient point and wants the quick and easy, duration
Short, at low cost, yield improves.
The present invention is exemplarily described in conjunction with attached drawing above.Obviously, present invention specific implementation is not by above-mentioned side
The limitation of formula.As long as using the improvement for the various unsubstantialities that the inventive concept and technical scheme of the present invention carry out；Or not
It is improved, above-mentioned conception and technical scheme of the invention are directly applied into other occasions, in protection scope of the present invention
Within.
Claims (10)
1. a kind of production method of dry etching lower electrode surface salient point, which comprises the steps of:
Step 1: making shielding plate according to the distribution of lower electrode salient point and size；
Step 2: shielding plate is bonded with lower electrode surface, by the lower electrode surface sand-blasting between adjacent shielding plate
To form lower electrode pothole；
Step 3: ceramic coated powder easily forms lower electrode surface salient point in pothole.
2. the production method of dry etching lower electrode surface salient point according to claim 1, which is characterized in that the masking
Piece is that the gummed paper of polyamide material or stainless steel are cut out.
3. the production method of dry etching lower electrode surface salient point according to claim 1, which is characterized in that adjacent masking
Seam between piece passes through the non-porous gummed paper fitting of strip polyamide.
4. the production method of dry etching lower electrode surface salient point according to claim 1, which is characterized in that the step
Sandblasting uses the Alundum of 180~230 mesh in two, and blasting pressure is 0.3~0.4Mpa, and sandblasting height is 400~450mm,
For shot blast cabinet away from for 3~5mm, sandblasting speed is 800mm/sec, sandblasting number 1~2 time.
5. the production method of dry etching lower electrode surface salient point according to claim 1, which is characterized in that use pressure
For 0.2Mpa compressed air by after sandblasting lower electrode pothole and surface dry up.
6. the production method of dry etching lower electrode surface salient point according to claim 1, which is characterized in that the step
Ceramic coated powder uses AI in three2O3Powder, spray power are 28.8~31.2kw, and spraying main gas is argon gas, and auxiliary gas is helium
Gas, carrier gas are argon gas, the pressure of main gas, auxiliary gas and carrier gas be respectively 0.344~0.379MPa, 0.344~0.413MPa and
0.344~0.379MPa, spraying height are 100~120mm, spray sweep span 2mm, speed is 800~850mm/sec, secondary
Number 2~3 times.
7. the production method of dry etching lower electrode surface salient point according to claim 1, which is characterized in that the step
Ceramic coated powder uses Y in three2O3Powder, spray power are 28~30KW, and main gas is argon, and auxiliary gas is helium, and carrier gas is argon, main
The pressure of gas, auxiliary gas and carrier gas is respectively 0.344~0.448Mpa, 0.345~0.379Mpa and 0.137~0.276MPa, spray
Applying distance is 120~130mm, and spraying sweep span is set as 2mm, and spraying rate is 900~1200mm/sec.
8. the production method of dry etching lower electrode surface salient point according to claim 1, which is characterized in that the production
Method include thes steps that removing shielding plate, cleaning and drying to lower electrode.
9. the production method of dry etching lower electrode surface salient point according to claim 8, which is characterized in that the cleaning
It being cleaned using giant, the hydraulic pressure of giant is 2~3Mpa, height of the muzzle apart from lower electrode surface be 50~
60cm, the non-dust cloth wiping lower electrode side soaked later using isopropanol, is then wiped using the non-dust cloth that ethyl alcohol soaks
The lower electrode back side is wiped, after all faces clean up, with the secondary flushing of above-mentioned giant.
10. the production method of dry etching lower electrode surface salient point according to claim 8, which is characterized in that described dry
Dry is the lower electrode after rinsing, and using the moisture on compressed air drying surface, is sent into baking oven dries for 24 hours later.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810840857.2A CN109082623B (en) | 2018-07-27 | 2018-07-27 | Method for manufacturing salient points on surface of lower electrode by dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810840857.2A CN109082623B (en) | 2018-07-27 | 2018-07-27 | Method for manufacturing salient points on surface of lower electrode by dry etching |
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| Publication Number | Publication Date |
|---|---|
| CN109082623A true CN109082623A (en) | 2018-12-25 |
| CN109082623B CN109082623B (en) | 2020-09-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201810840857.2A Active CN109082623B (en) | 2018-07-27 | 2018-07-27 | Method for manufacturing salient points on surface of lower electrode by dry etching |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111564356A (en) * | 2020-05-09 | 2020-08-21 | 芜湖通潮精密机械股份有限公司 | Lower electrode surface dielectric layer and manufacturing process thereof |
| CN113667919A (en) * | 2021-08-23 | 2021-11-19 | 苏州众芯联电子材料有限公司 | Regeneration process for lower electrode of LCD and AMOLED dry etching |
| CN113917720A (en) * | 2021-10-20 | 2022-01-11 | 苏州众芯联电子材料有限公司 | Lower electrode with compact floating point surface structure and manufacturing method thereof |
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| JP2006013372A (en) * | 2004-06-29 | 2006-01-12 | Fuji Xerox Co Ltd | Method for processing functional film and method for manufacturing inkjet recording head using the same |
| CN103855068A (en) * | 2012-11-30 | 2014-06-11 | 世界中心科技股份有限公司 | Manufacturing method of surface salient points of electrostatic adsorption plate in dry etching equipment |
| CN105886997A (en) * | 2015-01-26 | 2016-08-24 | 上海工程技术大学 | Method for preparing printer anilox roller based on thermal spraying technology |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006013372A (en) * | 2004-06-29 | 2006-01-12 | Fuji Xerox Co Ltd | Method for processing functional film and method for manufacturing inkjet recording head using the same |
| CN103855068A (en) * | 2012-11-30 | 2014-06-11 | 世界中心科技股份有限公司 | Manufacturing method of surface salient points of electrostatic adsorption plate in dry etching equipment |
| CN105886997A (en) * | 2015-01-26 | 2016-08-24 | 上海工程技术大学 | Method for preparing printer anilox roller based on thermal spraying technology |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111564356A (en) * | 2020-05-09 | 2020-08-21 | 芜湖通潮精密机械股份有限公司 | Lower electrode surface dielectric layer and manufacturing process thereof |
| CN113667919A (en) * | 2021-08-23 | 2021-11-19 | 苏州众芯联电子材料有限公司 | Regeneration process for lower electrode of LCD and AMOLED dry etching |
| CN113917720A (en) * | 2021-10-20 | 2022-01-11 | 苏州众芯联电子材料有限公司 | Lower electrode with compact floating point surface structure and manufacturing method thereof |
| CN113917720B (en) * | 2021-10-20 | 2022-07-05 | 苏州众芯联电子材料有限公司 | Method for manufacturing lower electrode with compact floating point surface structure |
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| CN109082623B (en) | 2020-09-04 |
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