CN109075088A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN109075088A
CN109075088A CN201780028064.4A CN201780028064A CN109075088A CN 109075088 A CN109075088 A CN 109075088A CN 201780028064 A CN201780028064 A CN 201780028064A CN 109075088 A CN109075088 A CN 109075088A
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semiconductor
interconnecting piece
semiconductor device
manufacturing
equal
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CN109075088B (zh
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本田尊
本田一尊
茶花幸
茶花幸一
佐藤慎
永井朗
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Lishennoco Co ltd
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Hitachi Chemical Co Ltd
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Abstract

本发明公开一种半导体装置的制造方法，所述半导体装置为具备具有连接部的半导体芯片和具有连接部的配线电路基板、且各自的连接部相互电连接的半导体装置，或为具备具有连接部的多个半导体芯片且各自的连接部相互电连接的半导体装置。连接部由金属构成。上述方法具备：(a)第一工序，将半导体芯片和配线电路基板、或将半导体芯片彼此以中间隔着半导体用粘接剂的状态，在低于连接部的金属的熔点的温度下，按照各自的连接部相互接触的方式压接，获得临时连接体；(b)第二工序，使用密封用树脂将临时连接体的至少一部分密封，获得密封临时连接体；以及(c)第三工序，将密封临时连接体以大于或等于连接部的金属的熔点的温度加热，获得密封连接体。

Description

半导体装置的制造方法
技术领域
本发明涉及半导体装置的制造方法。
背景技术
迄今，为了将半导体芯片与基板连接，广泛应用使用金线等金属细线的引线接合方式。然而，为了应对针对半导体装置的高功能、高集成、高速化等要求，在半导体芯片或基板上形成被称为凸块的导电性突起而将半导体芯片与基板直接连接的倒装芯片连接方式(FC连接方式)正在推广。
作为FC连接方式，已知使用焊料、锡、金、银、铜等进行金属接合的方法；施加超声波振动而进行金属接合的方法；利用树脂的收缩力来保持机械接触的方法等，但从连接部的可靠性的观点考虑，通常为使用焊料、锡、金、银、铜等进行金属接合的方法。
例如，在半导体芯片与基板间的连接中，BGA(Ball Grid Array，球栅阵列)、CSP(Chip Size Package，芯片尺寸封装)等中盛行使用的COB(Chip On Board，板上芯片)型连接方式也为FC连接方式。
FC连接方式也广泛用于在半导体芯片上形成凸块或配线而在半导体芯片间连接的COC(Chip On Chip，芯片上芯片)型连接方式。
现有技术文献
专利文献
专利文献1：日本特开2008-294382
发明内容
发明要解决的课题
在强烈要求进一步的小型化、薄型化、高功能化的封装中，将上述连接方式进行层叠、多段化而成的芯片堆叠型封装、POP(Package On Package，堆叠封装)、TSV(Through-Silicon Via，硅通孔)等也开始广泛普及。
通过配置为立体状而不是平面状，从而能够缩小封装，因此上述技术被经常使用，对于半导体的性能提高和噪声减少、安装面积的削减、省电化也有效，作为下一代的半导体配线技术而受到关注。
从生产率提高的观点考虑，在晶片上压接(连接)半导体芯片后进行单片化而制作半导体封装的COW(Chip On Wafer，晶片上芯片)、将晶片彼此压接(连接)后进行单片化而制作半导体封装的WOW(Wafer On Wafer，晶片上晶片)也受到关注。
在上述倒装芯片封装的组装中，首先，利用筒夹从经切割的晶片拾取半导体芯片或被供给了半导体用粘接剂的半导体芯片，通过筒夹供给至压接工具。
接着，进行芯片-芯片、或者芯片-基板的位置对准，进行压接。
为了形成金属连接，使压接工具的温度上升，以使得上下、或上下任一方以上的连接部的金属达到大于或等于熔点。
在进行层叠、多段化的芯片堆叠封装中，反复进行芯片拾取、位置对准、压接。
然后，为了进行半导体封装的保护，通过利用密封用的树脂来密封芯片上表面，形成密封体。
然而，在以往的倒装芯片封装的组装中，由于芯片与半导体用密封材、或者芯片与基板的热膨胀率差，有时在压接后半导体封装发生翘曲。由于该翘曲，产生无法进行包覆成型(overmold)、以及发生封装的连接不良这样的问题。
本发明鉴于上述情况而完成，目的在于提供一种能够抑制将半导体构件彼此连接时的翘曲的半导体装置的制造方法。
用于解决课题的方法
本发明用于解决上述课题，提供一种能够抑制半导体装置的翘曲的半导体装置的制造方法。
(1)一种半导体装置的制造方法，所述半导体装置为具备具有连接部的半导体芯片和具有连接部的配线电路基板且各自的连接部相互电连接的半导体装置、或为具备具有连接部的多个半导体芯片且各自的连接部相互电连接的半导体装置，连接部由金属构成，
上述半导体装置的制造方法具备：
(a)第一工序，将半导体芯片和配线电路基板、或将半导体芯片彼此以中间隔着半导体用粘接剂的状态，在低于连接部的金属的熔点的温度下，按照各自的连接部相互接触的方式压接，获得临时连接体；
(b)第二工序，使用密封用树脂将临时连接体的至少一部分密封，获得密封临时连接体；以及
(c)第三工序，将密封临时连接体以大于或等于连接部的金属的熔点的温度加热，获得密封连接体。
(2)一种半导体装置的制造方法，所述半导体装置为具备具有连接部的半导体芯片和具有连接部的配线电路基板且各自的连接部通过连接凸块而相互电连接的半导体装置、或为具备具有连接部的多个半导体芯片且各自的连接部通过连接凸块而相互电连接的半导体装置，连接部和连接凸块由金属构成，
上述半导体装置的制造方法具备：
(a)第一工序，将半导体芯片和配线电路基板、或将半导体芯片彼此以中间隔着半导体用粘接剂的状态，在低于连接凸块的金属的熔点的温度下，按照各自的连接部与连接凸块接触的方式压接，获得临时连接体；
(b)第二工序，使用密封用树脂将临时连接体的至少一部分密封，获得密封临时连接体；以及
(c)第三工序，将密封临时连接体以大于或等于连接凸块的金属的熔点的温度加热，获得密封连接体。
(3)根据上述半导体装置的制造方法，在第一工序中，通过将半导体芯片和配线电路基板、或将半导体芯片彼此用相对的一对临时压接用挤压构件夹持来进行加热和加压，从而进行压接。
(4)根据上述半导体装置的制造方法，半导体用粘接剂含有重均分子量小于或等于10000的化合物以及固化剂，且80～130℃时的熔融粘度小于或等于6000Pa·s。
(5)根据上述半导体装置的制造方法，半导体用粘接剂含有重均分子量小于或等于10000的化合物、固化剂、以及下述通式(1)所表示的硅烷醇化合物。
[化1]
R1-R2-Si(OH)3 (1)
[式中，R1表示烷基或苯基，R2表示亚烷基。]
(6)根据上述半导体装置的制造方法，R1为苯基。
(7)根据上述半导体装置的制造方法，硅烷醇化合物在25℃为固态。
(8)根据上述半导体装置的制造方法，半导体用粘接剂含有重均分子量超过10000的高分子量成分。
(9)根据上述半导体装置的制造方法，高分子量成分为重均分子量大于或等于30000且玻璃化转变温度小于或等于100℃的成分。
(10)根据上述半导体装置的制造方法，半导体粘接剂为膜状。
发明效果
根据本发明，可以提供一种能够抑制将半导体构件彼此连接时的翘曲的半导体装置的制造方法。即，如上所述，在高于连接部等的金属的熔点的温度进行加热处理而形成金属连接的工序之前，通过用树脂密封半导体芯片来形成密封体，从而能够抑制封装的翘曲。
附图说明
图1是表示半导体装置的一个实施方式的示意截面图。
图2是表示半导体装置的一个实施方式的示意截面图。
图3是表示半导体装置的一个实施方式的示意截面图。
图4是表示半导体装置的一个实施方式的示意截面图。
图5是表示半导体装置的一个实施方式的示意截面图。
图6是表示在半导体芯片上临时压接基板的工序的一例的工序图。
具体实施方式
以下对本实施方式的半导体装置的制造方法中所使用的芯片、基板等进行说明。
<半导体装置>
以下，对于利用本实施方式的半导体装置的制造方法获得的半导体装置，使用图1和图2进行说明。图1表示在半导体芯片与基板间进行连接的情况的截面结构，图2表示在半导体芯片间进行连接的情况的截面结构。
图1是表示半导体装置的一个实施方式的示意截面图。图1(a)所示的半导体装置100具有：彼此相对的半导体芯片10和基板(电路配线基板)20、在半导体芯片10和基板20的彼此相对的面上分别配置的配线15、将半导体芯片10和基板20的配线15相互连接的连接凸块30、无间隙地填充在半导体芯片10和基板20间的空隙中的粘接剂层40、以及将半导体芯片10和基板20的连接部分进行密封的密封用树脂60。半导体芯片10和基板20通过配线15和连接凸块30进行倒装芯片连接。配线15和连接凸块30由粘接剂层40进行密封而与外部环境隔绝。同样地，半导体芯片10和粘接剂层40由密封用树脂60进行密封而与外部环境隔绝。
图1(b)所示的半导体装置200具有：彼此相对的半导体芯片10和基板20、在半导体芯片10和基板20的彼此相对的面上分别配置的凸块32、以及无间隙地填充在半导体芯片10和基板20间的空隙中的粘接剂层40。半导体芯片10和基板20通过将相对的凸块32相互连接而进行倒装芯片连接。凸块32由粘接剂层40进行密封而与外部环境隔绝。同样地，半导体芯片10和粘接剂层40由密封用树脂60进行密封而与外部环境隔绝。粘接剂层40为半导体用粘接剂的固化物。
图2是表示半导体装置的其他实施方式的示意截面图。图2(a)所示的半导体装置300除了两个半导体芯片10通过配线15和连接凸块30而进行倒装芯片连接这一点以外，与半导体装置100同样。图2(b)所示的半导体装置400除了两个半导体芯片10通过凸块32而进行倒装芯片连接这一点以外，与半导体装置200同样。作为图2(a)的更具体的形态，可列举如下形态：图中上侧的半导体芯片10具有铜柱和焊料(焊料凸块)作为连接部，图中下侧的半导体芯片10具有衬垫作为连接部(在连接部镀金)。
作为被称为凸块(连接凸块)的导电性突起的材质，使用金、银、铜、焊料(主成分为例如锡-银、锡-铅、锡-铋、锡-铜、锡-银-铜等)、锡、镍等作为主要成分，可以仅由单一的成分构成，也可以由多种成分构成。另外，也可以按照构成将这些金属层叠而成的结构的方式形成。凸块可以形成于半导体芯片、或者基板。连接部的金属也可以包含较便宜的铜、或者焊料。从提高连接可靠性和抑制翘曲的观点考虑，连接部的金属也可以包含焊料。
被称为衬垫的连接部的金属面使用金、银、铜、焊料(主成分为例如锡-银、锡-铅、锡-铋、锡-铜、锡-银-铜等)、锡、镍等作为主要成分，可以仅由单一的成分构成，也可以由多种成分构成。另外，也可以按照构成将这些金属层叠而成的结构的方式形成。从连接可靠性的观点考虑，衬垫也可以包含金、或者焊料。
在配线(配线图案)的表面可以形成包含金、银、铜、焊料(主成分为例如锡-银、锡-铅、锡-铋、锡-铜、锡-银-铜等)、锡、镍等作为主要成分的金属层，该金属层可以仅由单一的成分构成，也可以由多种成分构成。另外，也可以具有将多个金属层层叠而成的结构。连接部的金属也可以包含较便宜的铜、或者焊料。从提高连接可靠性和抑制翘曲的观点考虑，连接部的金属也可以包含焊料。
半导体装置在例如上述凸块-凸块间、凸块-衬垫间、凸块-配线间进行连接。该情况下，在后述的加热处理(第三工序)中只要任一方的连接部的金属成为大于或等于熔点即可。
作为半导体芯片10，没有特别限定，可以使用硅、锗等元素半导体，砷化镓、磷化铟等化合物半导体等各种半导体。
作为基板20(半导体基板)，只要为通常的电路基板就没有特别限制。作为基板20，可以使用：在以玻璃环氧、聚酰亚胺、聚酯、陶瓷、环氧树脂、双马来酰亚胺三嗪等作为主要成分的绝缘基板表面上，具有将不需要金属膜的部位蚀刻去除而形成的配线15(配线图案)的电路基板；通过金属镀敷等在上述绝缘基板表面上形成了配线15的电路基板；通过在上述绝缘基板表面上印刷导电性物质而形成了配线15的电路基板等。
也可以层叠有多个如半导体装置100～400所示那样的结构(封装)。该情况下，半导体装置100～400也可以由包含金、银、铜、焊料(主成分为例如锡-银、锡-铅、锡-铋、锡-铜、锡-银-铜)、锡、镍等的凸块或配线而相互电连接。
作为层叠多个半导体装置的方法，如图3所示，例如可列举TSV(Through-SiliconVia，硅通孔)技术。TSV技术中，使半导体用粘接剂介于半导体芯片之间而进行倒装芯片连接或层叠。图3是表示半导体装置的其他实施方式的示意截面图，是使用TSV技术的半导体装置。图3所示的半导体装置500中，形成于中介层50上的配线15经由半导体芯片10的配线15与连接凸块30连接，从而半导体芯片10与中介层50进行倒装芯片连接。在半导体芯片10与中介层50之间的空隙中无间隙地填充有粘接剂层40。在上述半导体芯片10的与中介层50相反一侧的表面上，经由配线15、连接凸块30和粘接剂层40而反复层叠有半导体芯片10。半导体芯片10(最外层除外)的表背的图案面的配线15通过填充于贯通半导体芯片10内部的孔内的贯通电极34而相互连接。作为贯通电极34的材质，可以使用铜、铝等。包含多个半导体芯片10的层叠体由密封用树脂60进行密封，与外部环境隔绝。
通过这样的TSV技术，从通常不使用的半导体芯片的背面也能够获取信号。进一步，由于使贯通电极34垂直地通过半导体芯片10内，因此可以缩短相对的半导体芯片10间的距离、以及半导体芯片10和中介层50间的距离，能够进行灵活的连接。在这样的TSV技术中，本实施方式的半导体装置的制造方法也可以应用于层叠芯片与中介层间。
图4和5是表示半导体装置的其他实施方式的示意截面图。图4所示的半导体装置600除了多个半导体芯片10通过配线15和连接凸块30而在基板20上进行倒装芯片连接这一点以外，与半导体装置100同样。图5所示的半导体装置700除了多个半导体芯片10通过配线15和连接凸块30而在中介层50上进行倒装芯片连接这一点以外，与半导体装置100同样。
<半导体装置的制造方法>
第一实施方式的半导体装置的制造方法为具备具有连接部的半导体芯片和具有连接部的配线电路基板且各自的连接部通过连接凸块而相互电连接的半导体装置的制造方法，或为具备具有连接部的多个半导体芯片且各自的连接部通过连接凸块而相互电连接的半导体装置的制造方法，连接凸块由金属构成，
上述半导体装置的制造方法具备：
(a)第一工序，将半导体芯片和配线电路基板、或将半导体芯片彼此以中间隔着半导体用粘接剂的状态，在低于连接凸块的金属的熔点的温度下，按照各自的连接部与连接凸块接触的方式压接，获得临时连接体；
(b)第二工序，使用密封用树脂将临时连接体的至少一部分密封，获得密封临时连接体；以及
(c)第三工序，将密封临时连接体以大于或等于连接凸块的金属的熔点的温度加热，获得密封连接体。
由此，能够获得例如图1(a)或图2(a)所示的半导体装置。以下，以图2(a)为例，对各工序进行说明。
首先，在半导体芯片10上贴附膜状的半导体用粘接剂(以下也有时称为“膜状粘接剂”)。膜状粘接剂的贴附可以通过热压、辊层压、真空层压等来进行。膜状粘接剂的供给面积和厚度可根据半导体芯片10和基板20的尺寸、连接凸块30的高度等而适当设定。膜状粘接剂可以贴附在半导体芯片10上，也可以在半导体晶片上贴附膜状粘接剂后，进行切割而单片化为半导体芯片10，从而制作贴附有膜状粘接剂的半导体芯片10。
使用倒装芯片接合机等连接装置将半导体芯片10的配线15彼此进行位置对准后，在小于或等于连接凸块30(焊料凸块)的熔点的温度下进行临时压接，获得临时连接体(第一工序)。
接着，将临时连接体中的一方的半导体芯片10的上表面密封，获得密封临时连接体(第二工序)。半导体芯片10的密封可以利用压缩成型机、传递成型机等来进行。
然后，对于密封临时连接体，以施加大于或等于连接凸块30的熔点的温度的方式进行加热，在配线15与连接凸块30间形成金属连接，从而获得密封连接体(第三工序)。加热处理可以利用热压接机、回流焊炉、加压烘箱等来进行。
对第一工序的一例进行说明。图6是表示在半导体芯片上临时压接基板的工序的一例的工序图。
首先，如图1的(a)所示，将具有半导体芯片主体12、配线15和连接凸块30的半导体芯片10与具有基板主体22和作为连接部的配线15的基板20，一边在它们之间配置粘接剂层40一边进行重叠，形成层叠体3。通过切割半导体晶片而形成半导体芯片10后，该半导体芯片10经拾取而被搬送至基板20上，以使连接凸块30与基板20的配线15相对配置的方式进行位置对准。层叠体3形成于挤压装置43的台42上，上述挤压装置43具有相对配置的一对作为临时压接用挤压构件的压接头41和台42。连接凸块30设置于配线15上，上述配线15设置在半导体芯片主体12上。基板20的配线15设置于基板主体22上的预定位置。连接凸块30和配线15分别具有由金属材料形成的表面。
接着，如图1的(b)所示，通过将层叠体3用作为临时压接用挤压构件的台42和压接头41夹持而进行加热和加压，由此将基板20临时压接于半导体芯片10上。在图6的实施方式的情况下，压接头41配置于层叠体3的半导体芯片10侧，台42配置于层叠体3的基板20侧。
在为了临时压接而对层叠体3进行加热和加压时，台42和压接头41中的至少一方可以被加热至低于形成半导体芯片10的连接凸块30表面的金属材料的熔点、以及形成作为基板20的连接部的配线15表面的金属材料的熔点的温度。
在第一工序中的临时压接时，为了避免压接工具的热转移至筒夹、半导体芯片10等，压接工具(临时压接用挤压构件)拾取(带有膜状粘接剂的)半导体芯片10时的温度(挤压构件的温度)优选为低温。另一方面，为了能够提高膜状粘接剂的流动性，排除卷入时的空隙，临时压接时的温度(挤压构件的温度)也可以加热至高温，但优选为低于膜状粘接剂的反应开始温度的温度。另外，为了缩短冷却时间，压接工具拾取半导体芯片10时的温度与临时压接时的温度之差可以小。该差可以为小于或等于100℃、或者小于或等于60℃。在拾取时和临时压接时，温度可以是固定的。在两者之差小于或等于100℃的情况下，存在压接工具的冷却时间缩短、生产率进一步提高的倾向。需要说明的是，反应开始温度是指使用DSC(Perkin Elmer公司制，DSC-Pyirs1)，在样品量10mg、升温速度10℃/分钟、测定气氛：空气或氮气气氛的条件下测定时的起始(On-set)温度。
从以上的观点考虑，台42和/或压接头41的温度在拾取半导体芯片的期间可以为例如大于或等于30℃且小于或等于130℃，在为了临时压接而对层叠体3进行加热和加压期间可以为例如大于或等于50℃且小于或等于150℃。
第一工序中的连接负荷依赖于凸块数，考虑凸块的高度不均吸收、凸块变形量的控制等来设定。压接时，为了排除空隙，使半导体芯片10、或半导体芯片10与基板20的连接部金属与连接凸块接触，可以使负荷增大。如果负荷大，则容易排除空隙，连接部的金属与连接凸块容易接触。例如相对于半导体芯片10的每1针脚(1凸块)可以为0.009N至0.2N。
从生产率提高的观点考虑，临时压接所花费的压接时间可以设定为短时间。所谓短时间的压接时间，是指在连接形成中连接部被加热至大于或等于230℃的时间(例如焊料使用时的时间)为小于或等于5秒。连接时间可以为小于或等于4秒、或者小于或等于3秒。另外，如果各压接时间与冷却时间相比为短时间，则能够进一步表现出本发明的制造方法的效果。
在第二工序中，将第一工序后的临时连接体(半导体封装)搬入用于形成密封临时连接体的模具中，在其上供给密封用树脂60。然后，推动密封用树脂60，使其固化，从而形成密封临时连接体。
在第三工序时的加热处理中，需要大于或等于密封临时连接体中的连接凸块30的金属的熔点的温度。例如，如果连接凸块30为焊料凸块，则可以为大于或等于230℃且小于或等于330℃。如果为低温，则存在连接凸块30的金属不熔融而不能形成充分的金属连接的倾向。
从生产率提高的观点考虑，第三工序中的连接时间可以设定为短时间，也可以设为能够使连接凸块30(焊料凸块)熔融，去除氧化膜和表面的杂质而在连接部形成金属接合的程度的时间。需要说明的是，所谓以短时间的连接，是指在连接形成时间(正式压接时间)中，如果连接凸块30为焊料凸块，则在大于或等于230℃所花费的时间为小于或等于5秒。连接时间也可以为小于或等于4秒、或者小于或等于3秒。连接时间越为短时间，则生产率越容易提高。
关于加热处理，只要能够施加大于或等于密封临时连接体的连接凸块30的金属的熔点的温度就没有特别限制，可以利用热压接机、回流焊炉、加压烘箱等来进行。在热压接机的情况下，可以局部地施加热，因此能够期待翘曲减少。因此，从翘曲减少的观点考虑，可以为热压接机。另一方面，从生产率提高的观点考虑，也可以为能够一次性对多个封装进行加热处理的回流焊炉和加压烘箱。
第一工序(临时压接)中，可以将多个半导体芯片10压接。该情况下，例如可以在晶片、中介层、或者线路图基板上，将多个半导体芯片10平面地逐个进行临时压接(第一工序)，然后，将多个芯片一并密封(第二工序)。
另外，在TSV结构的封装中常见的堆叠压接中，将多个半导体芯片10立体地压接。该情况下，也可以将多个半导体芯片10逐个堆积而进行压接(第一工序)，然后将多个芯片密封(第二工序)。
第二实施方式的半导体装置的制造方法为具备具有连接部的半导体芯片和具有连接部的配线电路基板且各自的连接部相互电连接的半导体装置的制造方法、或为具备具有连接部的多个半导体芯片且各自的连接部相互电连接的半导体装置的制造方法，连接部由金属构成，上述半导体装置的制造方法具备：
(a)第一工序，将半导体芯片和配线电路基板、或将半导体芯片彼此以中间隔着半导体用粘接剂的状态，在低于连接部的金属的熔点的温度下，按照各自的连接部相互接触的方式压接，获得临时连接体；
(b)第二工序，使用密封用树脂将临时连接体的至少一部分密封，获得密封临时连接体；以及
(c)第三工序，将密封临时连接体以大于或等于连接部的金属的熔点的温度加热，获得密封连接体。
由此，能够获得例如图1(b)或图2(b)所示的半导体装置。
第二实施方式除了在不经由连接凸块30的情况下将连接部彼此连接这一点以外，与第一实施方式同样。
<半导体用粘接剂>
半导体用粘接剂以重均分子量小于或等于10000的化合物以及固化剂为代表，可以含有如下所述的多种成分。
(重均分子量小于或等于10000的化合物)
作为重均分子量小于或等于10000的化合物，没有特别限制，但其为与一起含有的固化剂进行反应的化合物。重均分子量小至小于或等于10000的成分有可能在加热时分解等而成为空隙的原因，但通过与固化剂进行反应，从而容易确保高耐热性。作为这样的化合物，例如可列举环氧树脂、(甲基)丙烯酸化合物等。
(i)环氧树脂
作为环氧树脂，只要分子内具有两个以上的环氧基，就没有特别限制。作为环氧树脂，例如可以使用：双酚A型、双酚F型、萘型、苯酚酚醛清漆型、甲酚酚醛清漆型、苯酚芳烷基型、联苯型、三苯基甲烷型、二环戊二烯型、各种多官能环氧树脂等。它们可以单独使用或者作为两种以上的混合物来使用。从耐热性、操作性的观点考虑，可以选自双酚F型、苯酚酚醛清漆型、甲酚酚醛清漆型、联苯型、三苯基甲烷型。相对于半导体用粘接剂的整体100质量份，环氧树脂的配合量例如可以设为10～50质量份。在大于或等于10质量份的情况下，固化成分充分存在，因此在固化后也容易充分控制树脂的流动，如果小于或等于50质量份，则固化物不会变得过硬，存在能够进一步抑制封装的翘曲的倾向。
(ii)(甲基)丙烯酸化合物
作为(甲基)丙烯酸化合物，只要分子内具有一个以上的(甲基)丙烯酰基，就没有特别限制。作为(甲基)丙烯酸化合物，例如可以使用：双酚A型、双酚F型、萘型、苯酚酚醛清漆型、甲酚酚醛清漆型、苯酚芳烷基型、联苯型、三苯基甲烷型、二环戊二烯型、芴型、金刚烷型、各种多官能丙烯酸化合物等。它们可以单独使用或者作为两种以上的混合物来使用。相对于半导体用粘接剂的整体100质量份，(甲基)丙烯酸化合物的配合量可以为10～50质量份、或者15～40质量份。在大于或等于10质量份的情况下，固化成分充分地存在，因此在固化后也容易充分地控制树脂的流动。如果小于或等于50质量份，则固化物不会变得过硬，能够进一步抑制封装的翘曲。
(甲基)丙烯酸化合物在室温(25℃)可以为固态。固态与液态相比难以产生空隙，另外，固化前(B阶)的半导体用粘接剂的粘性(粘着性)小，操作性优异。
(甲基)丙烯酸化合物的官能团数可以小于或等于3。如果官能团数小于或等于3，则在短时间内的固化充分进行，更容易抑制固化反应率的下降(固化的网络急速发展，有时导致未反应基团残存)，因此固化物特性更容易提高。
从耐热性、流动性的观点考虑，重均分子量小于或等于10000的化合物的重均分子量可以为100～9000、或者300～7000。重均分子量的测定方法与后述的重均分子量超过10000的高分子量成分的重均分子量的测定方法同样。
(固化剂)
作为固化剂，例如可列举：酚醛树脂系固化剂、酸酐系固化剂、胺系固化剂、咪唑系固化剂和膦系固化剂、偶氮化合物、有机过氧化物等。
(i)酚醛树脂系固化剂
作为酚醛树脂系固化剂，只要分子内具有两个以上的酚羟基，就没有特别限制。作为酚醛树脂系固化剂，例如可以使用：苯酚酚醛清漆、甲酚酚醛清漆、苯酚芳烷基树脂、甲酚萘酚甲醛缩聚物、三苯基甲烷型多官能酚和各种多官能酚醛树脂。它们可以单独使用或者作为两种以上的混合物来使用。
从良好的固化性、粘接性和保存稳定性的观点考虑，酚醛树脂系固化剂相对于上述环氧树脂的当量比(酚羟基/环氧基，摩尔比)可以为0.3～1.5、0.4～1.0、或者0.5～1.0。如果当量比大于或等于0.3，则存在固化性提高而粘接力进一步提高的倾向，如果小于或等于1.5，则未反应的酚羟基不会过剩地残存，吸水率被抑制得低，存在绝缘可靠性进一步提高的倾向。
(ii)酸酐系固化剂
作为酸酐系固化剂，例如可以使用：甲基环己烷四甲酸二酐、偏苯三酸酐、均苯四甲酸酐、二苯甲酮四甲酸二酐和乙二醇双(脱水偏苯三酸酯)。它们可以单独使用或者作为两种以上的混合物来使用。
从良好的固化性、粘接性和保存稳定性的观点考虑，酸酐系固化剂相对于上述环氧树脂的当量比(酸酐基/环氧基，摩尔比)可以为0.3～1.5、0.4～1.0、或者0.5～1.0。如果当量比大于或等于0.3，则存在固化性提高而粘接力进一步提高的倾向，如果小于或等于1.5，则未反应的酸酐不会过剩地残存，吸水率被抑制得低，存在绝缘可靠性进一步提高的倾向。
(iii)胺系固化剂
作为胺系固化剂，例如可以使用双氰胺。
从良好的固化性、粘接性和保存稳定性的观点考虑，胺系固化剂相对于上述环氧树脂的当量比(胺/环氧基，摩尔比)可以为0.3～1.5、0.4～1.0、或者0.5～1.0。如果当量比大于或等于0.3，则存在固化性提高而粘接力进一步提高的倾向，如果小于或等于1.5，则未反应的胺不会过剩地残存，存在绝缘可靠性进一步提高的倾向。
(iv)咪唑系固化剂
作为咪唑系固化剂，例如可列举：2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑、1-氰基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑偏苯三酸酯、1-氰基乙基-2-苯基咪唑偏苯三酸酯、2,4-二氨基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪、2,4-二氨基-6-[2'-十一烷基咪唑基-(1')]-乙基-均三嗪、2,4-二氨基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基-均三嗪、2,4-二氨基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪异氰脲酸加成物、2-苯基咪唑异氰脲酸加成物、2-苯基-4,5-二羟基甲基咪唑、2-苯基-4-甲基-5-羟基甲基咪唑、以及环氧树脂与咪唑类的加成物。这些中，从优异的固化性、保存稳定性和连接可靠性的观点考虑，也可以选自以下的物质：1-氰基乙基-2-十一烷基咪唑、1-氰基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑偏苯三酸酯、1-氰基乙基-2-苯基咪唑偏苯三酸酯、2,4-二氨基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪、2,4-二氨基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基-均三嗪、2,4-二氨基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪异氰脲酸加成物、2-苯基咪唑异氰脲酸加成物、2-苯基-4,5-二羟基甲基咪唑以及2-苯基-4-甲基-5-羟基甲基咪唑。它们可以单独使用或者将两种以上并用而使用。另外，也可以制成将它们进行微胶囊化而得到的潜在性固化剂。
相对于环氧树脂100质量份，咪唑系固化剂的含量可以为0.1～20质量份、或者0.1～10质量份。如果咪唑系固化剂的含量大于或等于0.1质量份，则存在固化性提高的倾向，如果小于或等于20质量份，则在形成金属接合之前，半导体用粘接剂不易固化，因此存在不易产生连接不良的倾向。
(v)膦系固化剂
作为膦系固化剂，例如可列举：三苯基膦、四苯基四苯基硼酸盐、四苯基四(4-甲基苯基)硼酸盐和四苯基(4-氟苯基)硼酸盐。
相对于环氧树脂100质量份，膦系固化剂的含量可以为0.1～10质量份、或者0.1～5质量份。如果膦系固化剂的含量大于或等于0.1质量份，则存在固化性提高的倾向，如果小于或等于10质量份，则在形成金属接合之前，半导体用粘接剂不易固化，因此存在不易产生连接不良的倾向。
酚醛树脂系固化剂、酸酐系固化剂和胺系固化剂分别可以单独使用一种或者作为两种以上的混合物而使用。咪唑系固化剂和膦系固化剂分别可以单独使用，也可以与酚醛树脂系固化剂、酸酐系固化剂或者胺系固化剂一起使用。
(vi)有机过氧化物
作为有机过氧化物，例如可列举：酮过氧化物、过氧化缩酮、氢过氧化物、二烷基过氧化物、二酰基过氧化物、过氧化二碳酸酯、过氧化酯等。从保存稳定性的观点考虑，可以选自氢过氧化物、二烷基过氧化物、过氧化酯。进一步，从耐热性的观点考虑，可以选自氢过氧化物、二烷基过氧化物。
相对于(甲基)丙烯酸化合物的总重量，有机过氧化物的含量可以为0.5～10重量％、或者1～5重量％。在大于或等于0.5重量％的情况下，容易充分地进行固化，在小于或等于10重量％的情况下，存在能够抑制因固化急剧进行使反应点变多而导致分子链变短，或残存未反应基团从而可靠性下降的倾向。
上述有机过氧化物可以单独使用或者作为两种以上的混合物而使用。
对于环氧树脂和(甲基)丙烯酸化合物、与固化剂(i)～(vi)的组合，只要进行固化就没有特别限制。从操作性、保存稳定性、固化性的观点考虑，与环氧树脂进行组合的固化剂可以选自苯酚与咪唑、酸酐与咪唑、胺与咪唑、或者单独的咪唑。如果在短时间内连接，则生产率提高，因此也可以单独使用快速固化性优异的咪唑。如果在短时间内固化，则能够抑制低分子成分等挥发成分，因此也能够抑制空隙产生。从操作性、保存稳定性的观点考虑，与(甲基)丙烯酸化合物进行组合的固化剂也可以为有机过氧化物。
固化反应率可以为大于或等于80％、或者大于或等于90％。如果200℃(小于或等于焊料熔融温度)/5s的固化反应率大于或等于80％，则在连接时(大于或等于焊料熔融温度)，焊料不易产生流动、飞溅，存在不易产生连接不良和绝缘可靠性不良的倾向。
固化体系可以为自由基聚合体系。例如，作为重均分子量小于或等于10000的化合物，与阴离子聚合的环氧树脂(环氧-固化剂的固化系)相比，优选自由基聚合的(甲基)丙烯酸化合物(丙烯酸-过氧化物的固化系)。丙烯酸固化体系的化合物的固化反应率更高，因此更容易抑制空隙，更容易抑制连接部金属的流动、飞溅。如果含有阴离子聚合的环氧树脂等，则有时固化反应率难以达到大于或等于80％。在并用环氧树脂的情况下，相对于(甲基)丙烯酸化合物80质量份，环氧树脂可以为小于或等于20质量份。也可以单独使用丙烯酸固化体系。
(硅烷醇化合物)
硅烷醇化合物是由下述通式(1)所表示的化合物。
[化2]
R1-R2-Si(OH)3(1)
[式中，R1表示烷基或苯基，R2表示亚烷基]
从耐热性的观点考虑，硅烷醇化合物可以在25℃为固态。从耐热性、流动性的观点考虑，R1可以为烷基或苯基。也可以为烷基与苯基的混合。作为R1所表示的基团，例如可列举：苯基系、丙基系、苯基丙基系、苯基甲基系等。R2没有特别限制。从耐热性的观点考虑，也可以为重均分子量为100～5000的亚烷基。从高反应性(固化物强度)的观点考虑，也可以为三官能硅烷醇。
通过在半导体用粘接剂中添加硅烷醇化合物，从而流动性提高，空隙抑制性与高连接性提高。如果流动性提高(粘度下降)，则容易排除在芯片接触时所卷入的空隙。通过使用耐热性高(热失重量小)的硅烷醇化合物，更能够抑制空隙产生。如果热失重量小，则挥发成分少，因此空隙减少，可靠性(耐回流焊性)也更加提高。
以半导体用粘接剂总量为基准，硅烷醇化合物的含量可以为2～20质量％，从高流动化与固化物强度(粘接力等)的观点考虑，可以为2～10质量％、或者2～9质量％。如果含量大于或等于2质量％，则容易表现出效果(高流动化)，如果小于或等于20质量％，则存在固化强度增加，表现出高粘接力的倾向。如果含量在某种程度上少，则环氧树脂或丙烯酸树脂的固化物的比率变大，因此可推测表现出更高的粘接力。
(重均分子量超过10000的高分子量成分)
重均分子量超过10000的高分子量成分可列举：环氧树脂、苯氧基树脂、聚酰亚胺树脂、聚酰胺树脂、聚碳二酰亚胺树脂、氰酸酯树脂、丙烯酸树脂、聚酯树脂、聚乙烯树脂、聚醚砜树脂、聚醚酰亚胺树脂、聚乙烯缩醛树脂、聚氨酯树脂、丙烯酸橡胶等。其中，也可以选自耐热性和膜形成性优异的环氧树脂、苯氧基树脂、聚酰亚胺树脂、丙烯酸树脂、丙烯酸橡胶、氰酸酯树脂、聚碳二酰亚胺树脂等。也可以选自耐热性、膜形成性进一步优异的环氧树脂、苯氧基树脂、聚酰亚胺树脂、丙烯酸树脂、丙烯酸橡胶。这些高分子量成分可以单独使用或者作为两种以上的混合物或者共聚物来使用。
在半导体用粘接剂包含环氧树脂的情况下，重均分子量超过10000的高分子量成分与环氧树脂的重量比没有特别限制。从容易保持膜状的方面出发，相对于重均分子量超过10000的高分子量成分1重量份，环氧树脂可以为0.01～5重量份、0.05～4重量份、或者0.1～3重量份。如果该重量比大于或等于0.01重量份，则存在固化性提高而粘接力进一步提高的倾向。如果该重量比小于或等于5重量份，则存在膜形成性和薄膜形成性特别优异的倾向。
在半导体用粘接剂包含(甲基)丙烯酸化合物的情况下，重均分子量超过10000的高分子量成分与(甲基)丙烯酸化合物的重量比没有特别限制。相对于重均分子量超过10000的高分子量成分1重量份，(甲基)丙烯酸化合物可以为0.01～10重量份、0.05～5重量份、或者0.1～5重量份。如果该重量比大于或等于0.01重量份，则存在固化性提高而粘接力进一步提高的倾向。如果该重量比大于10重量份，则存在膜形成性特别优异的倾向。
从半导体用粘接剂对基板和芯片的贴附性优异的观点考虑，重均分子量超过10000的高分子量成分的玻璃化转变温度(Tg)可以为小于或等于120℃、小于或等于100℃、或者小于或等于85℃。如果Tg小于或等于120℃，则容易利用粘接剂组合物来填埋形成于半导体芯片的凸块、形成于基板的电极或配线图案等的凹凸，因此存在气泡不易残存、不易产生空隙的倾向。需要说明的是，上述Tg是使用DSC(Perkin Elmer公司制DSC-7型)，在样品量10mg、升温速度为10℃/分钟、测定气氛：空气的条件下测定时的Tg。
重均分子量超过10000的高分子量成分的重均分子量以聚苯乙烯换算计为超过10000，但为了单独显示出更良好的膜形成性，也可以大于或等于30000、大于或等于40000、或者大于或等于50000。在重均分子量超过10000的情况下，存在膜形成性特别优异的倾向。需要说明的是，本说明书中，重均分子量是指使用高效液相色谱仪(岛津制作所制C-R4A)，以聚苯乙烯换算进行测定时的重均分子量。
半导体用粘接剂中可以含有助熔成分、即作为显示助熔活性(将氧化物和杂质去除的活性)的化合物的助熔活性剂。作为助熔活性剂，可列举：像咪唑类和胺类那样具有非共价电子对的含氮化合物、羧酸类、酚类、以及醇类。与醇等相比，有机酸更强烈地表现出助熔活性，存在连接性更加提高的倾向。羧酸能够更加提高连接性和稳定性。
半导体用粘接剂中，为了控制粘度和固化物的物性、以及为了抑制将半导体芯片彼此或将半导体芯片与基板连接时的空隙产生和吸湿率，也可以配合填料。作为绝缘性无机填料，例如可列举：玻璃、二氧化硅、氧化铝、氧化钛、碳黑、云母、氮化硼等，其中，从操作性的观点考虑，可以选自二氧化硅、氧化铝、氧化钛、氮化硼等，从形状统一性(操作性)的观点考虑，也可以选自二氧化硅、氧化铝、氮化硼。作为晶须，可列举：硼酸铝、钛酸铝、氧化锌、硅酸钙、硫酸镁、氮化硼等。作为树脂填料，可以使用聚氨酯、聚酰亚胺、甲基丙烯酸甲酯树脂、甲基丙烯酸甲酯-丁二烯-苯乙烯共聚树脂(MBS)等。这些填料和晶须可以单独使用或者作为两种以上的混合物来使用。对于填料的形状、粒径和配合量，没有特别限制。
从分散性和粘接力提高的观点考虑，也可以为表面处理填料。作为表面处理，可列举缩水甘油基系(环氧系)、胺系、苯基系、苯基氨基系、丙烯酸系、乙烯基系等。
这些填料和晶须可以单独使用或者作为两种以上的混合物来使用。对于填料的形状、粒径和配合量没有特别限制。另外，也可以通过表面处理来适当调整物性。
关于粒径，从防止倒装芯片连接时发生咬入的观点考虑，平均粒径可以为小于或等于1.5μm，从辨认性(透明性)的观点考虑，平均粒径也可以为小于或等于1.0μm。
作为表面处理，从表面处理的容易度出发，可以为利用环氧硅烷系、氨基硅烷系、丙烯酸硅烷系等硅烷化合物的硅烷处理。
从分散性和流动性优异、使粘接力进一步提高的观点考虑，表面处理剂可以为选自缩水甘油基系、苯基氨基系、丙烯酸系、甲基丙烯酸系化合物中的化合物。从保存稳定性的观点考虑，表面处理剂也可以为选自苯基系、丙烯酸系、甲基丙烯酸系化合物中的化合物。
与无机填料相比，树脂填料可以在260℃等的高温下赋予柔软性，因此适于提高耐回流焊性。另外，由于赋予柔软性，因此对于提高膜形成性也有效果。
从绝缘可靠性的观点考虑，填料可以为绝缘性。也可以为不含银填料、焊料填料等导电性金属填料的半导体用粘接剂。
以半导体用粘接剂的固体成分整体为基准，填料的配合量可以为30～90质量％、或者40～80质量％。如果该配合量大于或等于30质量％，则散热性容易变高，另外，存在能够进一步抑制空隙产生和吸湿率的倾向。如果小于或等于90质量％，则容易抑制粘度提高而引起粘接剂组合物的流动性下降以及填料咬入连接部中(俘获)，因此存在连接可靠性更加提高的倾向。
进一步，半导体用粘接剂中也可以配合离子捕捉剂、抗氧化剂、硅烷偶联剂、钛偶联剂、流平剂等。它们可以单独使用一种，也可以将两种以上组合使用。关于它们的配合量，只要以表现出各添加剂的效果的方式适当调整即可。
半导体用粘接剂能够在大于或等于200℃的高温下进行压接。另外，在使焊料等金属熔融而形成连接的倒装芯片封装中，更加表现出效果。
半导体用粘接剂可以为膜状。如果为膜状，则存在生产率提高的倾向。
半导体用粘接剂(膜状)的制作方法的一例如下所述。将重均分子量超过10000的高分子量成分、重均分子量小于或等于10000的化合物、固化剂、填料、其他添加剂等加入有机溶剂中，通过搅拌混合、混炼等使其溶解或分散，调制树脂清漆。然后，在实施了脱模处理的基材膜上，使用刮刀涂布机、辊涂机、敷料器、模涂机、或缺角轮涂布机等涂布树脂清漆后，通过加热使有机溶剂减少，在基材膜上形成膜状粘接剂。另外，也可以利用在通过加热使有机溶剂减少之前，将树脂清漆旋涂于晶片等而形成膜，然后进行溶剂干燥的方法，在晶片上形成半导体用粘接剂。
作为基材膜，只要具有可耐受使有机溶剂挥发时的加热条件的耐热性，就没有特别限制。作为基材膜，可以例示聚酯膜、聚丙烯膜、聚对苯二甲酸乙二醇酯膜、聚酰亚胺膜、聚醚酰亚胺膜、聚醚萘二甲酸酯膜、甲基戊烯膜等。基材膜并不限定于由这些膜形成的单层的基材膜，也可以为由两种以上的材料形成的多层膜。
使有机溶剂从涂布后的树脂清漆挥发时的条件例如可以为进行50～200℃、0.1～90分钟的加热。如果对安装后的空隙和粘度调整无影响，则可以设为有机溶剂挥发至小于或等于1.5质量％的条件。
为了能够提高流动性，更加排除卷入空隙，半导体用粘接剂在低于连接凸块30或凸块32的熔点的温度(80～130℃)进行压接的第一工序(临时压接)时的熔融粘度可以为小于或等于6000Pa·s、小于或等于5500Pa·s、小于或等于5000Pa·s、或者小于或等于4000Pa·s。但是，如果熔融粘度过低，则存在树脂沿着芯片侧面向上爬，附着于压接工具而使生产率下降的倾向。因此，临时压接时的熔融粘度可以为大于或等于1000Pa·s。熔融粘度可以使用例如流变仪(Anton Paar日本公司制，MCR301)来测定。
<密封用树脂>
作为密封用树脂，只要为用于半导体装置的密封的树脂，就没有特别限制。作为这样的树脂，例如可列举：双酚A型环氧树脂、双酚F型环氧树脂、双酚AD型环氧树脂、双酚S型环氧树脂、萘二醇型环氧树脂、氢化双酚A型环氧树脂、缩水甘油胺型环氧树脂等。
实施例
以下，使用实施例对本发明进行说明，但本发明不限制于此。
<膜状粘接剂的制作>
以下示出所使用的化合物。
(i)重均分子量超过10000的高分子量成分
丙烯酸橡胶(日立化成株式会社制，KH-C865，Tg：0～12℃，Mw：450000～650000)
苯氧基树脂(东都化成株式会社，ZX-1356-2，Tg：约71℃，Mw：约63000)
(ii)重均分子量小于或等于10000的化合物：(甲基)丙烯酸化合物
芴骨架丙烯酸酯(大阪燃气化学株式会社，EA0200，二官能团)
(iii)重均分子量小于或等于10000的化合物：环氧树脂
含三苯酚甲烷骨架的多官能固态环氧树脂(三菱化学株式会社，EP1032H60)
双酚F型液态环氧树脂(三菱化学株式会社，YL983U)
(iv)固化剂
二枯基过氧化物(日油株式会社，Percumyl D)
2,4-二胺-6[2'-甲基咪唑基-(1')-乙基-均三嗉异氰脲酸加成物(四国化成株式会社，2MAOK-PW))
(v)无机填料
二氧化硅填料(株式会社Admatechs，SE2050，平均粒径0.5μm)
环氧硅烷表面处理二氧化硅填料(株式会社Admatechs，SE2050SEJ，平均粒径0.5μm)
甲基丙烯酸表面处理纳米二氧化硅填料(株式会社Admatechs，YA050C-SM，以下设为SM纳米二氧化硅，平均粒径约50nm)
(vi)树脂填料
有机填料(罗门哈斯日本株式会社制，EXL-2655：核壳型有机微粒)
(vii)助熔剂
2-甲基戊二酸(奥德里奇，熔点：约77℃)
(膜状粘接剂的制作方法)
对于表1中所示的质量比例的(甲基)丙烯酸化合物或环氧树脂、无机填料、树脂填料和助熔剂，以成为NV60％(相对于溶剂40质量％，液态成分、固体成分、填料等构成粘接剂的所有成分为60质量％)的方式添加有机溶剂(甲基乙基酮)。然后，加入与固体成分相同重量的Φ1.0mm和Φ2.0mm的珠粒，利用珠磨机(Fritsch日本株式会社，行星型微粉碎机P-7)搅拌30分钟。然后，加入高分子量成分，再次利用珠磨机搅拌30分钟。搅拌后，添加固化剂进行搅拌，然后将所使用的珠粒通过过滤而去除，获得两种树脂清漆。
利用小型精密涂布装置(株式会社廉井精机制)，将所制作的各树脂清漆分别涂布于表面经脱模处理的基材膜上，将所涂布的树脂清漆在洁净烘箱(Espec株式会社制)中进行干燥(70℃/10min)，从而获得两种膜状粘接剂A和B。
[表1]
<半导体装置的制造>
(实施例1)
工序1：将上述制作的膜状粘接剂剪切(8mm×8mm×0.045mmt)，贴附于基板(20mm×27mm，0.41mm厚，连接部金属：Cu(OSP处理)，制品名：HCTEG-P1180-02，日立化成电子株式会社制)上。在其上，使用热压接机(FCB3，松下株式会社制)，在台温度80℃、临时压接温度130℃、临时压接时间2秒的条件下，将带有焊料凸块的半导体芯片(芯片尺寸：7.3mm×7.3mm×0.15mmt，凸块高度：铜柱+焊料共计约45μm，凸块数328针，间距80μm，制品名：SM487A-HC-PLT，住友商事九州株式会社制)进行临时压接。
工序2：对于进行了临时压接的半导体封装(临时连接体)，使用成型装置(株式会社Tekuno Maruchishi(テクノマルチシ)制造)来进行芯片上表面的密封，形成密封体(密封临时连接体)。
工序3：对于所获得的密封体，使用上述热压接机(FCB3，松下株式会社制)，以台温度80℃、压接温度280℃进行加热处理，制作半导体装置(密封连接体)。
(其他的实施例)
如表2所示，使用热压接机(FCB3，松下株式会社制)或者回流焊装置(株式会社田村制作所制)进行加热处理，使用膜状粘接剂A或B作为膜状粘接剂，并且将临时压接温度设为130℃(使用膜状粘接剂A时)或者80℃(使用膜状粘接剂B时)，除此以外，与实施例1同样地操作，制作半导体装置。
(比较例)
如表2所示，使用热压接机(FCB3，松下株式会社制)或者回流焊装置(株式会社田村制作所制)进行加热处理，使用膜状粘接剂A或B作为膜状粘接剂，将工序2与工序3调换，并且将临时压接温度设为130℃(使用膜状粘接剂A时)或者80℃(使用膜状粘接剂B时)，除此以外，与实施例1同样地操作，制作半导体装置。需要说明的是，所谓将工序2与工序3调换，是指在完成了基板与半导体芯片的连接后，使用成型装置进行了密封处理。
<评价>
·熔融粘度评价
对于上述制作的膜状粘接剂，使用流变仪(Anton Paar日本公司制，MCR301)以及夹具(一次性盘(直径8mm)和一次性碟)，在样品厚度400μm、升温速度10℃/分钟、频率1Hz的条件下，测定工序1(临时压接温度：80～130℃)中的熔融粘度。将结果示于表2中。
·翘曲评价
对于上述制作的各半导体装置，使用非接触式形状测定装置(SONY制)，测量芯片对角方向的两边的形状。使用EXCEL来修正测量数据的倾斜，将一边的凹凸的最大值与最小值之差作为翘曲量(μm)。将结果示于表2中。
[表2]
符号说明
10：半导体芯片；12：半导体芯片主体；15：配线(连接部)；20：基板(配线电路基板)；22：基板主体；30：连接凸块；32：凸块(连接部)；34：贯通电极；40：粘接剂层；50：中介层；60：密封用树脂；100、200、300、400、500、600、700：半导体装置。

Claims (10)

1.一种半导体装置的制造方法，其为具备具有连接部的半导体芯片和具有连接部的配线电路基板且各自的所述连接部相互电连接的半导体装置的制造方法，或为具备具有连接部的多个半导体芯片且各自的所述连接部相互电连接的半导体装置的制造方法，
所述连接部由金属构成，
所述半导体装置的制造方法具备：
(a)第一工序，将所述半导体芯片和所述配线电路基板、或将所述半导体芯片彼此以中间隔着半导体用粘接剂的状态，在低于所述连接部的金属的熔点的温度下，按照各自的所述连接部相互接触的方式压接，获得临时连接体；
(b)第二工序，使用密封用树脂将所述临时连接体的至少一部分密封，获得密封临时连接体；以及
(c)第三工序，将所述密封临时连接体以大于或等于所述连接部的金属的熔点的温度加热，获得密封连接体。
2.一种半导体装置的制造方法，其为具备具有连接部的半导体芯片和具有连接部的配线电路基板且各自的所述连接部通过连接凸块而相互电连接的半导体装置的制造方法，或为具备具有连接部的多个半导体芯片且各自的所述连接部通过连接凸块而相互电连接的半导体装置的制造方法，
所述连接部和所述连接凸块由金属构成，
所述半导体装置的制造方法具备：
(a)第一工序，将所述半导体芯片和所述配线电路基板、或将所述半导体芯片彼此以中间隔着半导体用粘接剂的状态，在低于所述连接凸块的金属的熔点的温度下，按照各自的所述连接部与所述连接凸块接触的方式压接，获得临时连接体；
(b)第二工序，使用密封用树脂将所述临时连接体的至少一部分密封，获得密封临时连接体；以及
(c)第三工序，将所述密封临时连接体以大于或等于所述连接凸块的金属的熔点的温度加热，获得密封连接体。
3.根据权利要求1或2所述的半导体装置的制造方法，在所述第一工序中，将所述半导体芯片和所述配线电路基板、或将所述半导体芯片彼此用相对的一对挤压构件夹持来进行加热和加压，从而进行压接。
4.根据权利要求1～3中任一项所述的半导体装置的制造方法，所述半导体用粘接剂含有重均分子量小于或等于10000的化合物以及固化剂，且80～130℃时的熔融粘度小于或等于6000Pa·s。
5.根据权利要求1～4中任一项所述的半导体装置的制造方法，所述半导体用粘接剂含有重均分子量小于或等于10000的化合物、固化剂、以及下述通式(1)所表示的硅烷醇化合物，
[化1]
R1-R2-Si(OH)3 (1)
式中，R1表示烷基或苯基，R2表示亚烷基。
6.根据权利要求5所述的半导体装置的制造方法，所述R1为苯基。
7.根据权利要求5或6所述的半导体装置的制造方法，所述硅烷醇化合物在25℃为固态。
8.根据权利要求1～7中任一项所述的半导体装置的制造方法，所述半导体用粘接剂含有重均分子量超过10000的高分子量成分。
9.根据权利要求8所述的半导体装置的制造方法，所述高分子量成分为重均分子量大于或等于30000且玻璃化转变温度小于或等于100℃的成分。
10.根据权利要求1～9中任一项所述的半导体装置的制造方法，所述半导体用粘接剂为膜状。
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