CN109065479B - Silicon etching machine and operation method thereof - Google Patents
Silicon etching machine and operation method thereof Download PDFInfo
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- CN109065479B CN109065479B CN201810840487.2A CN201810840487A CN109065479B CN 109065479 B CN109065479 B CN 109065479B CN 201810840487 A CN201810840487 A CN 201810840487A CN 109065479 B CN109065479 B CN 109065479B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
Abstract
The invention relates to a silicon etcher, which relates to the semiconductor integrated circuit manufacturing technology and comprises a cavity body; the wafer-level packaging device comprises a sucker and an edge control ring, wherein the sucker and the edge control ring are positioned in a cavity, the sucker is used for bearing a wafer, the edge control ring is arranged around the periphery of the sucker and is arranged on one side where the wafer is placed, and a step is arranged between the edge control ring and the sucker; the lifting device is positioned in the cavity, is connected with the edge control ring in an assembling mode and is used for lifting or lowering the edge control ring; and the control circuit is connected with the lifting device and the menu selection unit of the silicon etching machine and used for receiving the menu information of the silicon etching machine and outputting a control signal to the lifting device according to the received menu information of the silicon etching machine, so that the lifting device controls the height of the step between the edge control ring and the sucker according to the control signal, the edge process window of the wafer is improved, and the yield of the wafer is improved.
Description
Technical Field
The present invention relates to semiconductor integrated circuit manufacturing technology, and more particularly, to a silicon etcher and a method of operating the same.
Background
In semiconductor integrated circuit technology, as the integration level is higher, the semiconductor wafer is gradually increased from 4 inches, 5 inches to larger sizes such as 12 inches, even 18 inches, and the critical dimension of the wafer is expected to be smaller, the process window is larger and the product yield is higher and higher from 45/40nm to 28/20 nm.
Therefore, there is a need for an apparatus and method for improving the yield of semiconductor integrated circuits.
Disclosure of Invention
The invention aims to provide a silicon etcher, which is used for improving a process window at the edge of a wafer and improving the yield of the wafer.
The invention provides a silicon etching machine, comprising: a cavity; the wafer-level wafer-; the lifting device is positioned in the cavity, is connected with the edge control ring in an assembling mode, and is used for lifting or lowering the edge control ring; and the control circuit is connected with the lifting device and the menu selection unit of the silicon etching machine and used for receiving the menu information of the silicon etching machine and outputting a control signal to the lifting device according to the received menu information of the silicon etching machine so that the lifting device controls the height of the step between the edge control ring and the sucker according to the control signal.
Furthermore, the lifting device comprises a stepping motor and a supporting device, one end of the supporting device is connected with the stepping motor in an assembling mode, and the other end of the supporting device is connected with the edge control ring in an assembling mode.
Furthermore, the supporting device comprises a plurality of thimbles which are positioned on one side of the edge control ring opposite to the wafer.
Furthermore, the plurality of thimbles are positioned below the edge control ring.
Furthermore, the control circuit comprises a controller for receiving menu information selected by the silicon etcher during wafer etching and outputting a height-related control signal to the lifting device, and the lifting device controls the step height between the edge control ring and the sucker according to the height-related control signal.
Furthermore, the lifting device controls the lifting height of the edge control ring according to the height-related control signal.
Furthermore, the lifting device comprises a stepping motor, and the control signal related to the height output by the control circuit is the number of steps of stepping of the stepping motor.
Further, the controller is a PLC controller.
The invention also provides an operation method of the silicon etching machine, which comprises the following steps: s1: designing to enable different step heights to be formed between an edge control ring and a sucker in a cavity of the silicon etching machine, carrying out potential test on the edge control ring under vacuum radio frequency at different step heights, and obtaining a target step height between the edge control ring and the sucker according to the measured potential of the edge control ring; s2: calculating the thickness variation of the edge control ring caused by etching each wafer under each menu of the silicon etching machine; and S3: and designing a step height control device, wherein the step height control device controls the step height between the edge control ring and the sucker to be the target step height according to the thickness change of the edge control ring caused by etching each wafer under each menu of the silicon etching machine.
Furthermore, step S2 further includes step S21, which is to calculate the thickness variation of the edge control ring when the edge control ring etches n wafers cumulatively under each menu of the silicon etching machine, and further calculate the thickness variation of the edge control ring caused by etching each wafer under each menu of the silicon etching machine, where n is greater than or equal to 1.
Furthermore, the step height control device comprises a lifting device and a control circuit.
Furthermore, the lifting device comprises a stepping motor and a supporting device, one end of the supporting device is connected with the stepping motor in an assembling mode, the other end of the supporting device is connected with the edge control ring in an assembling mode, the stepping motor is connected with the control circuit, receives the control signal output by the control circuit, and controls the supporting device to raise or lower the height of the edge control ring according to the control signal.
Furthermore, the control signal is a step number signal that the stepping motor needs to step.
In an embodiment of the invention, a lifting device and a control circuit are arranged in a cavity of a silicon etching machine to compensate the thinning amount of the edge control ring in the etching process, so that the process window of the edge of the wafer is improved, and the yield of the wafer is improved.
Drawings
FIG. 1 is a schematic view of a silicon etcher in accordance with an embodiment of the present invention.
FIG. 2 is a flow chart illustrating the operation of a silicon etcher in accordance with one embodiment of the present invention.
The reference numerals of the main elements in the figures are explained as follows:
100. a silicon etcher; 110. a cavity; 111. a suction cup; 113. an edge control ring; 120. a wafer; 130. a lifting device; 140. a control circuit; 132. a stepping motor; 134. and a supporting device.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic diagram of a silicon etcher according to an embodiment. As shown in fig. 1, the silicon etcher 100 includes a chamber 110, the chamber 110 includes a chuck 111 for supporting a wafer 120 and an edge control ring 113 disposed around the chuck 111, and a step is formed between the edge control ring 113 and the chuck 111 at a side where the wafer 120 is placed, i.e., the edge control ring 113 is higher than the chuck 111 by the step height. The edge control ring 113 is a consumable part, and during the etching process of the wafer, the edge control ring 113 is also etched to become thin, the step between the edge control ring 113 and the chuck 111 becomes low, and according to the langmuir test result, the potential of the plasma decreases with the thinning of the edge control ring 113, thereby affecting the etching direction of the wafer, resulting in a smaller process window at the edge of the wafer and a lower wafer yield. In the prior art, chamber maintenance is required frequently, the edge control ring 113 is replaced, the utilization rate of equipment is affected, the cost is increased, and the yield of wafers produced in the replacement gap of the edge control ring 113 is low.
In one embodiment of the invention, a silicon etcher device is provided. Specifically, referring to fig. 1, the silicon etching machine of the present invention further includes a lifting device 130 and a control circuit 140. The lifting device 130 is disposed in the chamber 110 and is coupled to the edge control ring 113 to lift or lower the edge control ring 113. The control circuit 140 is connected to the lifting device 130 and the menu selection unit of the silicon etcher, and is configured to receive menu information of the silicon etcher, and output a control signal to the lifting device 130 according to the received menu information of the silicon etcher, so that the lifting device 130 controls the step height between the edge control ring 113 and the chuck 111 according to the control signal. Even if the edge control ring 113 becomes thin in the etching process, the potential of the plasma is reduced, the process window of the wafer edge is reduced, and the wafer yield is reduced.
In an embodiment of the present invention, the lifting device 130 includes a further motor 132 and a supporting device 134, one end of the supporting device 134 is connected to the stepping motor 132, and the other end is connected to the edge control ring 113, and the stepping motor 132 controls the supporting device 134 to be raised or lowered, thereby controlling the edge control ring 113 to be raised or lowered, and thus controlling the step height between the edge control ring 113 and the suction cup 111.
In one embodiment of the present invention, the supporting device 134 comprises a plurality of pins located on a side of the edge control ring 113 opposite to the wafer 120. Specifically, in one embodiment of the present invention, a plurality of lift pins are located below the edge control ring 113, as shown in fig. 1, the wafer 120 is located at the upper end of the chuck 111, and the lift pins are located at the lower side of the edge control ring 113.
In an embodiment of the present invention, the control circuit 140 includes a controller, which receives menu information selected by a silicon etcher during wafer etching, and calculates a thickness consumed by etching the edge control ring 113 during the wafer etching process according to the menu information, that is, a height at which the edge control ring 113 needs to be raised, so as to output a control signal related to the height to the lifting device 130, and the lifting device 130 controls a step height between the edge control ring 113 and the chuck 111 according to the control signal related to the height. Further, the lifting device 130 controls the height of the edge control ring 113 to be raised according to the height-related control signal, so as to control the step height between the edge control ring 113 and the chuck 111 to compensate for the height of the wafer consumed in the etching process. More specifically, for a silicon etcher in which the lifting device 130 includes a stepping motor 132 and a supporting device 134, the control circuit 140 outputs a control signal related to the height as the number of steps that the stepping motor 132 steps, and the height that the supporting device 134 is lifted up is determined for a selected stepping motor, so that the control circuit 140 calculates the number of steps that the stepping motor 132 steps, i.e., the height of the step between the edge control ring 113 and the chuck 111 can be controlled.
In one embodiment of the present invention, the controller 140 is a PLC controller. In an embodiment of the present invention, the controller 140 may also be other control circuits, such as an analog controller or a digital controller, as long as the height-related control signal can be calculated according to the selected menu information.
Specifically, in an embodiment of the present invention, an operation method of the silicon etching machine shown in fig. 1 is further provided. Specifically, referring to fig. 2, fig. 2 is a flowchart illustrating an operation of the silicon etcher according to an embodiment of the present invention. As shown in fig. 2, the operation steps of the silicon etcher according to an embodiment of the present invention include:
s1: the design is that different step heights are arranged between the edge control ring and the sucker in the cavity of the silicon etching machine, the potential test under vacuum radio frequency is carried out on the edge control ring under different step heights, and the target step height between the edge control ring and the sucker is obtained according to the measured potential of the edge control ring.
S2: and calculating the thickness variation of the edge control ring caused by etching each wafer under each menu of the silicon etching machine.
In an embodiment of the present invention, the step S2 further includes a step S21 of calculating a thickness variation of the edge control ring when the edge control ring cumulatively etches n wafers under each menu of the silicon etcher, and further calculating to obtain a thickness variation of the edge control ring caused by the edge control ring etching each wafer under each menu of the silicon etcher, where n is greater than or equal to 1. As in one embodiment of the present invention, the silicon etcher includes menu A1, menu a2, and menu a3, and etches X1 wafers under menu A1, and the thickness of the edge control ring 113 is measured to be thinned A1 mm; etching X2 wafers under menu A2, and measuring the thickness reduction A2mm of the edge control ring 113; etching X3 wafers under the menu A3, measuring the thickness reduction A3mm of the edge control ring 113, and thus calculating the thickness variation of the edge control ring caused by etching each wafer under the silicon etching selector menu a1 of the edge control ring 113 to be A1/X1; calculating to obtain the thickness variation of the edge control ring 113 caused by etching each wafer under the silicon etching machine selection menu a2 as A2/X2; the thickness variation of the edge control ring 113 caused by etching each wafer under the silicon etcher selection menu A3 is calculated to be A3/X3. See table 1 for details:
TABLE 1
S3: and designing a step height control device, wherein the step height control device controls the step height between the edge control ring and the sucker to be the target step height according to the thickness change of the edge control ring caused by etching each wafer under each menu of the silicon etching machine.
In an embodiment of the present invention, the step height control device includes a lifting device 130 and a control circuit 140, wherein the lifting device 130 is disposed in the cavity 110 and is coupled to the edge control ring 113 for raising or lowering the edge control ring 113. The control circuit 140 is connected to the lifting device 130 and the menu selection unit of the silicon etcher, and is configured to receive menu information of the silicon etcher, and output a control signal to the lifting device 130 according to the received menu information of the silicon etcher, so that the lifting device 130 controls the step height between the edge control ring 113 and the chuck 111 according to the control signal.
Specifically, in an embodiment of the present invention, the lifting device 130 includes a stepping motor 132 and a supporting device 134, one end of the supporting device 134 is connected to the stepping motor 132, and the other end is connected to the edge control ring 113, the motor 132 is connected to the control circuit 140, and receives the control signal output by the control circuit 140, and the motor 132 controls the supporting device 134 to raise or lower the height of the edge control ring 113 according to the control signal. The control circuit 140 includes a controller (e.g., a PLC controller) that receives menu information selected by the silicon etcher during wafer etching. Specifically, as shown in table 2, if the menu information received by the PLC controller is a1, the thickness variation of the edge control ring caused by etching each wafer by the silicon etcher is a1/X1, and the number of steps that the stepper motor needs to step to compensate the thickness variation a1/X1 of the edge control ring is s a1/X1, where s is the number of steps that the stepper motor 132 steps for each 1mm movement of the supporting device 134, and the control signal output by the PLC controller is the number of steps that the stepper motor needs to step, and the stepper motor 132 receives the number of steps and steps the number of steps, so as to control the edge control ring 113 to be raised or lowered, so as to control the step height between the edge control ring 113 and the chuck 111 to be the target step height, and compensate for the thinning amount of the edge control ring 113 caused during the wafer etching process. Preferably, the step height between the edge control ring 113 and the suction cup 111 is controlled to be constant.
TABLE 2
In one embodiment of the present invention, the frequency of the stepper motor 132 operation may be set according to the actual product, such as 10 wafer stepper motors 132 per etch to compensate for the amount of thinning of the edge control ring 113 caused during the wafer etch process.
In an embodiment of the invention, a lifting device and a control circuit are arranged in a cavity of a silicon etching machine to compensate the thinning amount of the edge control ring in the etching process, so that the process window of the edge of the wafer is improved, and the yield of the wafer is improved.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. A method of operating a silicon etcher, the silicon etcher comprising: a cavity; the wafer-level wafer-; the lifting device is positioned in the cavity, is connected with the edge control ring in an assembling mode, and is used for lifting or lowering the edge control ring; and the control circuit is connected with the lifting device and the menu selection unit of the silicon etching machine, and is used for receiving the menu information of the silicon etching machine and outputting a control signal to the lifting device according to the received menu information of the silicon etching machine so as to enable the lifting device to control the height of the step between the edge control ring and the sucker according to the control signal, and the control circuit is characterized by comprising:
s1: designing to enable different step heights to be formed between an edge control ring and a sucker in a cavity of the silicon etching machine, carrying out potential test on the edge control ring under vacuum radio frequency at different step heights, and obtaining a target step height between the edge control ring and the sucker according to the measured potential of the edge control ring;
s2: calculating the thickness variation of the edge control ring caused by etching each wafer under each menu of the silicon etching machine; and
s3: and designing a step height control device, wherein the step height control device controls the step height between the edge control ring and the sucker to be the target step height according to the thickness change of the edge control ring caused by etching each wafer under each menu of the silicon etching machine.
2. The method as claimed in claim 1, wherein the step S2 further includes a step S21 of calculating the thickness variation of the edge control ring during the cumulative etching of n wafers under each menu of the silicon etcher, and further calculating the thickness variation of the edge control ring caused by the etching of each wafer under each menu of the silicon etcher, wherein n is greater than or equal to 1.
3. The method of claim 1, wherein the step height control device comprises a lifting device and a control circuit.
4. The operating method of the silicon etching machine as claimed in claim 3, wherein the lifting device comprises a stepping motor and a supporting device, one end of the supporting device is connected with the stepping motor, the other end of the supporting device is connected with the edge control ring, and the stepping motor is connected with the control circuit, receives the control signal output by the control circuit, and controls the supporting device to raise or lower the height of the edge control ring according to the control signal.
5. The method of claim 4, wherein the control signal is a number of steps the stepper motor needs to step.
6. The method of claim 4, wherein the support device comprises a plurality of pins located on a side of the edge control ring opposite the wafer.
7. The method of claim 6, wherein the plurality of lift pins are located below the edge control ring.
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| CN201810840487.2A CN109065479B (en) | 2018-07-27 | 2018-07-27 | Silicon etching machine and operation method thereof |
| CN202010206368.9A CN111312633A (en) | 2018-07-27 | 2018-07-27 | Silicon etching machine and operation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104609365A (en) * | 2015-02-14 | 2015-05-13 | 苏州工业园区纳米产业技术研究院有限公司 | Deep silicon etching machine table and wafer protection device thereof |
| CN106158719A (en) * | 2016-08-15 | 2016-11-23 | 中国电子科技集团公司第四十八研究所 | Wafer support ring, wafer support fixture and wafer fab |
| CN207165517U (en) * | 2017-04-28 | 2018-03-30 | 上海华力微电子有限公司 | A kind of edge ring structure |
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| JP3388228B2 (en) * | 2000-12-07 | 2003-03-17 | 株式会社半導体先端テクノロジーズ | Plasma etching apparatus and plasma etching method |
| KR20080001163A (en) * | 2006-06-29 | 2008-01-03 | 주식회사 하이닉스반도체 | Apparatus for plasma etching prevented hole tilting |
| US9583369B2 (en) * | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
| US10658222B2 (en) * | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| CN108140606B (en) * | 2015-10-21 | 2022-05-24 | 住友大阪水泥股份有限公司 | Electrostatic chuck device |
| US20170115657A1 (en) * | 2015-10-22 | 2017-04-27 | Lam Research Corporation | Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ |
| JP6812224B2 (en) * | 2016-12-08 | 2021-01-13 | 東京エレクトロン株式会社 | Board processing equipment and mounting table |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104609365A (en) * | 2015-02-14 | 2015-05-13 | 苏州工业园区纳米产业技术研究院有限公司 | Deep silicon etching machine table and wafer protection device thereof |
| CN106158719A (en) * | 2016-08-15 | 2016-11-23 | 中国电子科技集团公司第四十八研究所 | Wafer support ring, wafer support fixture and wafer fab |
| CN207165517U (en) * | 2017-04-28 | 2018-03-30 | 上海华力微电子有限公司 | A kind of edge ring structure |
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