CN109054648A - Serosity combination for chemically mechanical polishing - Google Patents
Serosity combination for chemically mechanical polishing Download PDFInfo
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- CN109054648A CN109054648A CN201810790107.9A CN201810790107A CN109054648A CN 109054648 A CN109054648 A CN 109054648A CN 201810790107 A CN201810790107 A CN 201810790107A CN 109054648 A CN109054648 A CN 109054648A
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- Prior art keywords
- thiazole
- chloro
- methyl
- acid
- chloromethyl
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Abstract
A kind of serosity combination disclosed herein.The serosity combination include the abrasive material of 0.1wt% to 10wt%, the isothiazole dispersion stabilizer of 0.01wt% to 1wt%, the benzene carboxylic acid corrosion inhibitor of 0.01wt% to 1wt%, the chelating amino acids agent of 0.01wt% to 15wt% and 0.01wt% to 1wt% the complexing agent being made of acrylamide and aminomethylpropanol.The serosity combination can make recess under high speed CMP process and erosion minimum compared with typical polishing slurries, it maintains stable Cu to remove rate simultaneously and so that the selectivity between Cu and Ta is removed rate maximum, thus without providing defect on the surface to be polished.
Description
The application is the applying date: on 2 28th, 2014；Application number: 201410071795.5；Invention and created name: it is used for
The divisional application of the serosity combination of chemically mechanical polishing.
Technical field
The present invention relates to the serosity combinations for chemically-mechanicapolish polishing (CMP).More specifically, the present invention relates to
In the serosity combination of CMP comprising abrasive material, dispersing agent, stabilizer, corrosion inhibitor, chelating agent and oxidant, the slurry
Liquid composition can make recess under high speed CMP process and erosion minimum, while ensure that stable Cu removes rate and warp
Selectivity between maximized Cu and Ta removes rate, thus without causing defect on the surface to be polished.
Background technique
With the development of semiconductor technology, line width constantly microminiaturization and the importance therefore planarized increase.Especially
Ground has been introduced by multilevel interconnection structure with the increase that semiconductor integrates.Use with shorter wavelengths of photoetching technique is
The problem of being caused scene depth (depth of field, DOF).To efficiently solve problems, the availability of CMP into
One step increases.
CMP is a kind of for planarizing the technique of wafer surface, is revolved on a surface of a wafer by the way that polishing pad to be attached to
Turn or the surface of eccentric mobile polishing block on and to rub at the front surface of chip, while supply include abrasive material slurry
Liquid is implemented.
More particularly, from slurries to slurries/chip between boundary and the improved wafer surface of its property on machinery
Polishing is mass transfer step；And the mechanical polishing on reactant to the absorption or wafer surface on surface is interfacial reaction step
Suddenly.In fact, carrying out polishing by CMP corresponds to interfacial reaction step, and mass transfer step is that successive reaction institute is required
's.
During interfacial reaction, chemical reaction be can be since reactant is adsorbed onto wafer surface and is adsorbed onto improved crystalline substance
Reaction between the reactant in piece surface and the space of wafer surface and occur.It removes at mechanical removing step in chip
The material largely sprawled on surface, this causes to remove in interface.Reactant is largely supplied to interface, so that continuously
It reacts and reactant is transferred to slurries/wafer surface from slurries, this ensures that mechanical/chemical polishes.
Typical CMP process there is still a need for inhibiting recess and erosion, while maintain stable Cu to remove rate and make Cu with
Selectivity between Ta removes rate and maximizes, and thus prevents the defect in polished surface.
Summary of the invention
It is an object of the present invention to provide enabled to compared with CMP slurry composition known in the art recess and
The serosity combination that erosion minimizes, while maintaining stable Cu to remove rate and moving the selectivity between Cu and Ta
Removal rates maximize, and thus prevent the defect in polished surface.
According to an aspect of the present invention, serosity combination includes: that the abrasive material of 0.1wt% to 10wt%, 0.01wt% are arrived
The isothiazole dispersion stabilizer of 1wt%, 0.01wt% to 1wt% by benzene carboxylic acid or benzotriazole (l, 2,3 triazole)
The chelating amino acids agent of the corrosion inhibitor, 0.01wt% to 15wt% of composition, 0.01wt% to 1wt% by acrylamide
With complexing agent, oxidant and the diluent of aminomethylpropanol composition.
Abrasive material may include having cross-linked structure and average particle diameter for the colloidal silicon dioxide or oxygen of 20nm to 130nm
Change aluminium.
Isothiazole dispersion stabilizer may include selected from least one of the group being made up of: 5- chloro-2-methyl -3
(2H)-isothiazolone, 5- chloro-2-methyl -2H- isothiazole -3- keto hydrochloride, the chloro- 4- methylbenzothiazole of 2- amino -5-, 2-
The chloro- 4- methylbenzothiazole of amino -7-, 2- amino -4- 5-chloromethyl thiazole (7250-84-2), 10- (chloracetyl) -2- (first
Sulfenyl) -10H- phenthazine, the chloro- 5- aminomethylthiazole of 2-, 2- chloro- 4- (chloromethyl) thiazole, 2- chloro-5-chloromethyl thiazole,
- 3 (2H)-isothiazolone of the chloro- 2- of 5- (4- Chlorophenylmethyl), 6- chloro- N, N- dimethyl -2-[4-morpholinodithio amine, the chloro- 4,5- of 2-
The chloro- 4,6- dimethyl-benzothiazole of dimethyl-benzothiazole, 2-, the chloro- 4,7- dimethyl-benzothiazole of 2-, the chloro- N- (5,6- of 2-
Dimethyl -2-[4-morpholinodithio base) acetamide, 3- chloro- 2,2- dimethyl-n- (1,3- thiazol-2-yl) propionamide, the chloro- 5- of 2-
The chloro- 2- ethyl -1,2- benzisothiazole chloride of (ethoxyl methyl) thiazole, 3-, 5- (2- chloroethyl) -4- methyl thiazolium
Azoles, 2- (1- chloroethyl) thiazole, the chloro- N- ethyl -5- thiazole methylamine of 2-, the chloro- 5- hydroxymethyl thiazole of 2-, the chloro- 5- (methoxy of 2-
Ylmethyl) thiazole, chloro- 5- methyl -2H-1,4- benzothiazine -3 (4H) -one of 7-, the chloro- 6- methyl of 5- -2-[4-morpholinodithio amine, 2-
The chloro- 4- methylbenzothiazole of (chloromethyl) -1,3- benzothiazole, 2-, the chloro- 5- methylbenzothiazole of 2-, the chloro- 6- methylbenzene of 2-
And thiazole, 2- Chloromethyl-benzothiazole, 5- chloro-2-methyl benzothiazole, 6- chloro-2-methyl benzothiazole, 3- (chloromethyl)-
Chloro- -2 (the 3H)-benzothiazolone of 4- methyl of 2 (3H) benzothiazolones, 7-, 3- chloromethyl -3H- benzothiazole -2- thioketones, 5-
Chloro- 6- methylbenzothiazole -2- base amine, the chloro- 4- methylbenzothiazole -2- base amine of 6-, the chloro- 3- methyl -3H- benzothiazole-of 6-
The chloro- 6- of 2- ylidene amines, 2- (1- Methylethyl) benzothiazole, 5- (chloromethyl) -4- Ethyl-2-Methyl -1,3- thiazole, 4- (chlorine
Methyl) -2- ethyl -1,3- thiazole, 4- (chloromethyl) -2- isopropyl thiazole, 5- chloro-2-methyl -4- isothiazoline -3- ketone,
5-Chloro-2-methyl-4-isothiazolin-3-one calcium chloride, 5-Chloro-2-methyl-4-isothiazolin-3-one, 4- (chloromethyl) -2-
(2- aminomethyl phenyl) -1,3- thiazole, 4- (chloromethyl) -2- (3- aminomethyl phenyl) -1,3- thiazole, 4- (chloromethyl) -2- (4- first
Base phenyl) -1,3- thiazole, 4- (chloromethyl) -2- methyl-1,3-thiazole, 5- chloro-2-methyl -6- nitrobenzene thiazole, (3-
Chloro-2-methyl-phenyl)-(4,5- dihydro-thiazol -2- base)-amine, the chloro- 5- of 3- (4- aminomethyl phenyl) isothiazole -4- formonitrile HCN, 4-
(chloromethyl) -2- phenyl -1,3- thiazole, 4- (chloromethyl) -2- propyl -1,3- thiazole, 5- chloro-2-methyl -3- (4- sulfonic group
Butyl) benzothiazolium salt, 4- (chloromethyl)-abadol, 2- (chloromethyl)-thiazole, the chloro- 4- methYl-thiazol of 2-, 2- be chloro-
5- methylthiazol, 4- (chloromethyl) -1,3- thiazole, 4- (chloromethyl) thiazole, 4- 5-chloromethyl thiazole, the chloro- 4- methylthiazol of 5-,
The chloro- 4- methyl-thiazole-5-sulfonamide of the chloro- 4- methylthiazol-5- sulfonamide of 5- 5-chloromethyl thiazole, 2-, 2-, the chloro- 4- methyl-of 2-
Thiazole -5- sulfonic acid chloride, the chloro- N- of 2- (4- methyl-1,3-thiazole -2- base) acetamide, 2- [(chloromethyl) sulfenyl] benzothiazole,
4- (4- chlorphenyl) -5- ethyl -1,3- thiazole -2- amine, 3- (the chloro- 2- phenylethyl of 2-) -2- thiazolidine imines, 2- (4- chlorine
Phenyl methyl) -3 (2H)-isothiazolones, 4- (3- chlorphenyl) -5- methyl-1,3-thiazole -2- amine, 4- (4- chlorphenyl) -5- first
Base -1,3- thiazole -2- amine, 4- (the chloro- phenyl of 4-) -2- methYl-thiazol, trans- 5- (4- chlorphenyl) -4- methyl -2- thiazolidine
Ketone, 2- chloro- 4- (trifluoromethyl) benzothiazole, 2- chloro- 6- (trifluoromethyl) benzothiazole, the chloro- 4- methyl-1 of 2,7- bis-, 3-
Benzothiazole, the chloro- 2- methyl-benzothiazole of 4,6- bis-, 4- (2,4 dichloro benzene base) -5- methyl-1,3-thiazole -2- amine, 3- second
Oxygroup -5- chloromethyl isothiazole and methylchloroisothiazandnone.
Corrosion inhibitor can be made of benzene carboxylic acid or benzotriazole (l, 2,3 triazole).Herein, benzene carboxylic acid may include
Selected from least one of the group being made up of: 5- amino -1,3- phthalic acid, 2- amino -1,4- phthalic acid, 3-
Amino -1,2- phthalic acid, 5- aminobenzene -1,3- dioctyl phthalate, 3- amino-benzene thiophene -2-carboxylic acid, 1- aminobenzene -2,4,5- three
Formic acid, 1- aminobenzene -2,4,6- tricarboxylic acid, 1- aminobenzene -3,4,5- tricarboxylic acid, 5- amino-l,2,3 benzene tricarboxylic acid, 2- ammonia
Base benzophenone-2 '-formic acid, 5- amino -1- benzothiophene -2- formic acid, 4- amino -2- fluobenzoic acid, 4- amino -3- fluorobenzene
Formic acid, 4- amino-O-Anisic Acid, 5- amino -2- morpholinyl benzoic acid, 2- (4- amino-benzene oxygen) benzoic acid, azo
Benzene -3,3 '-dioctyl phthalate, azobenzene -4,4 '-dioctyl phthalate, N- benzanilide -4,4 '-dioctyl phthalate, 1,2- phthalic acid, 1,3-
Phthalic acid, 1,4- phthalic acid, benzene -1,3- dioctyl phthalate diallyl ester, 1,2- phthalic acid didecyl base ester, 1,2- benzene two
Formic acid dinonyl ester, 1,2- phthalic acid diamyl base ester, mellitic acid, mellitic acid pregnancy base ester, benzene pentacarbonic acid, 1,2,4,
5- benzene tetracarboxylic acid, 1,2,4,5 benzenetetracarboxylic acid-d, benzene -1,2,3,4- tetracarboxylic acid, l,2,3 benzene tricarboxylic acid, 1,2,4- benzene front three
Acid, 1,3,5- benzene-d3- tricarboxylic acid, 1,3,5- benzenetricarboxylic acid, benzene -1,2,4- tricarboxylic acid, benzene -1,3,5- tricarboxylic acid, 1,2,3-
Benzenetricarboxylic acid 2- hydrate, 1- dibenzo-p-methyl-aza-cyclobutane -3- formic acid, 1- dibenzo-p-methyl-aza-cyclobutane -2- formic acid, 1-
Dibenzo-p-methyl-aza-cyclobutane -3- formic acid, (1H)-benzimidazole -7- formic acid, 1H- benzimidazolyl-2 radicals-formic acid, 1H- benzo miaow
Azoles -4- formic acid, 1H- benzimidazole -5- formic acid, 1H- benzimidazole -7- formic acid, 2- benzimidazole formic acid, 5- benzimidazole first
Acid, benzimidazole -5- formic acid, benzimidazole -5,6- dioctyl phthalate, 2,1- benzisothiazole -3- formic acid, 2,1- benzo isoxazole -
3- formic acid, 1- benzocyclobutane zinecarboxylic acid, (R) -1,4- benzdioxan -2- formic acid, 1,4- benzdioxan -2- formic acid, 1,4-
Benzdioxan -5- formic acid, (R) -1,4- benzdioxan -2- formic acid, (S) -1,4- benzdioxan -2- formic acid, 1,4- benzene
And dioxanes -2- formic acid, 1,4- benzdioxan -6- formic acid, 1,3- benzodioxole -2- formic acid, 1,3- benzo two
Oxole -4- formic acid, benzo [1,3] dioxole -2- formic acid, 1- benzofuran -3- formic acid, 1- benzofuran -
5- formic acid, 2,3- coumarilic acid, 2- benzofurancarboxylic acid, benzo (b) furans -2- formic acid, benzofuran -2- first
Acid, benzofuran -3- formic acid, benzofuran -4- formic acid, benzofuran -6- formic acid, benzofuran -7- formic acid, 2,3- benzo
Furandicarboxylic acid, benzofuraxan -5- formic acid, benzo furoxan -5- formic acid, 3H- benzo [e] indole-2-carboxylic acid, benzo [d]
Isoxazole-3- formic acid, benzo [d] oxazole-6- formic acid, benzoxazoles-2- formic acid, benzophenone-2-formic acid, UVINUL MS 40,
4 '-dioctyl phthalate, 3,3 ', 4,4 '-benzophenone tetracarboxylics, benzophenone tetracarboxylic, benzophenone-3,3 ', 4,4 '-tetracarboxylic acids,
Benzo [b] tellurium pheno -2- formic acid, 1,2,3- benzothiazole -5- formic acid, 1,3- benzothiazole -6- formic acid, benzo [d] thiazole -7-
Formic acid, benzothiazole -2- formic acid, benzothiazole -5- formic acid, benzothiazole -6- formic acid, 1- benzothiophene -3- formic acid, 1- benzene
Bithiophene -5- formic acid, benzo [b] thiophene -2-carboxylic acid, benzo [b] thiophene -3- formic acid, benzo [b] thiophene -7- formic acid, benzo
[b] thiophene -7- formic acid, benzothiophene -2- formic acid, 1H- benzotriazole -5- formic acid, benzotriazole -4- formic acid, 5- benzoxazoles
Formic acid, 3- (benzoyl-amido) -2- thiophenic acid, 1- benzoyl -3- azetidinecarboxylic acid, 2- benzoylcyclohexan
Alkane formic acid, cis- 2- 2-benzoyl-cyclohexane -1- formic acid, 2- benzoyl -1H- indole -3-carboxylic acid, 1- benzoyl piperidine -
2- formic acid, 1- benzoyl piperidine -4- formic acid, 2- benzoyl-acidum nicotinicum, 3- benzoyl pyridine -2- formic acid, 1-
Benzoyl pyrrole compound alkane -2- formic acid, 3- benzoyl -4- quinolinecarboxylic acid, 3- benzoyl quinoline -4- formic acid, 3- benzoyl
Base -2- thiophenic acid, 1- (benzyl) azetidine -2- formic acid, 1- benzyl -2- azetidinecarboxylic acid, 1- benzyl-azepine
Cyclobutane -3- formic acid, 1- benzyl-azetidine -3- formic acid, 1- benzyl azetidine -2- benzoic acid amides, 1- benzyl -4-
Boc- piperazine -2- formic acid, 1- benzyl cyclobutane -1- formic acid, 1- benzyl cyclobutane formate, 1- benzyl cyclobutane formate, 1- benzyl
Naphthenic acid, 1- benzyl cyclopentane-carboxylic acid, 1- benzyl cyclopropane-carboxylic acid, 1- benzyl -1H- indazole -3- formic acid, 1- benzyl Yin
Oxazolyl -3- formic acid, 1- benzylindole -3- formic acid, 2- benzyl isoindoline -4- formic acid, 4- Benzyl-morpholin -2- formic acid, 4- benzyl
Base-morpholine -3- formic acid, 4- Benzvlmorpholin -3- formic acid, 3- benzyl -2- oxazolidine formic acid, 3- benzyl oxygroup-cyclobutane formate,
4- benzyloxyindole -2- formic acid, 5- benzyl oxygroup -2- indolecarboxylic acid, 5- benzyloxyindole -2- formic acid, 6- benzyl oxygen
Base -1H- indole-2-carboxylic acid, 6- benzyl Oxy-1 H- indole -3-carboxylic acid, 7- benzyl Oxy-1 H- indoles -3- formic acid, 6- (benzyl
Base oxygroup) pyridine -2- formic acid, 8- (benzyl oxygroup) quinoline -7- formic acid, (R) -4- benzyl diethylenediamine -2- formic acid, 1- benzyl -1,3-
Piperazine dioctyl phthalate, 1- benzyl -2-piperidinecarboxylic acid, 1- benzyl piepridine -3- formic acid, 1- benzyl piepridine -4- formic acid, 1- benzyl-pyrroles
Alkane -3- formic acid, N- benzyl -3- pyrrolidinecarboxylic acid, 2- (benzyl sulfenyl) benzoic acid, 2- benzyl-thiazole alkane -4- formic acid, 2- bibenzyl
The bromo- 1,3- phthalic acid of base formic acid, 5- bromobenzoic acid, 4-, 4- bromobenzene -1,2- dioctyl phthalate, the bromo- 1,3- phthalic acid of 5-, 7- bromine
The bromo- 1- coumarilic acid of coumarilic acid, 5-, 3- bromobenzothiophene -2- formic acid, the bromo- 1- benzothiophene-of 4-
The bromo- 1- benzothiophene -2- formic acid of 2- formic acid, 5-, 5- bromobenzene simultaneously [b] thiophene -3- formic acid, the bromo- 1- benzothiophene -2- formic acid of 6-,
The bromo- 1- benzothiophene -2- formic acid of 7-, the bromo- 2- benzoxazoles formic acid of 5-, 3- (tert-butoxy) benzoic acid, 5- tert-butyl -1,3-
Phthalic acid, 2- chlorobenzofur -5- formic acid, 3- chlorobenzofur -5- formic acid, 5- chlorobenzofur -2- formic acid, 4 '-chlorine two
Benzophenone -2- formic acid, 3- chlorobenzene simultaneously [b] -2- thiophenic acid, 3- the chlorobenzene simultaneously chloro- 1- benzothiophene-of [b] thiophene -2-carboxylic acid, 4-
The chloro- 1- benzothiophene -2- formic acid of 2- formic acid, 5-, 5- chlorobenzene simultaneously [b] thiophene -3- formic acid, the chloro- 1- benzothiophene -2- formic acid of 6-,
The chloro- 1- benzothiophene -2- formic acid of 7-, 7- the chlorobenzene simultaneously chloro- 2- benzoxazoles formic acid of [b] thiophene -2-carboxylic acid, 5-, the chloro- 5- hydroxyl of 2-
The chloro- 4- morpholinyl benzoic acid of yl benzoic acid, 2-, dibenzofurans -3- formic acid, dibenzofurans -4- formic acid, 1,4- dibenzyl
Piperazine -2- formic acid, the bromo- O-Anisic Acid of 3,5- bis-, the fluoro- 4- nitrobenzoic acid of 2,5- bis-, the fluoro- 2- nitrobenzene of 4,5- bis-
Formic acid, 2,3- Dihydrobenzofuranes -7- formic acid, 3,4- dinitro -1,2- phthalic acid, 4,6- dinitro -1,3- benzene diformazan
Acid, 2,5- diphenyl benzene -1,4- dioctyl phthalate, 7- ethyoxyl coumarilic acid formic acid, 4- fluorobenzene -1,3- dioctyl phthalate, 6- fluoro- 1,
3- benzo dioxine -8- formic acid, the fluoro- 1- benzothiophene -2- formic acid of 4-, the fluoro- 1- benzothiophene -2- formic acid of 5-, 7-
Fluoro- 1- benzothiophene -2- formic acid, the fluoro- 4- nitrobenzoic acid of 2-, the fluoro- 4- nitrobenzoic acid of 3-, 2- hydroxy benzenes bamic acid, 4-
Hydroxyl -1,2- phthalic acid, 5- hydroxy benzenes -1,2,4- tricarboxylic acid, 4- hydroxyl benzofuran -3- formic acid, 4 '-hydroxy benzophenones
Ketone -2- formic acid, 4- (2- hydroxyl-oxethyl) benzoic acid, 3- iodobenzene -1,2- dioctyl phthalate, the iodo- 1,2- phthalic acid of 4-, the iodo- benzene of 4-
And [b] thiophene -2-carboxylic acid, 4- (isoamoxy) benzoic acid, 5- Methoxvbenzofuran -2- formic acid, 7- methoxyl group benzo furan
It mutters -2- formic acid, 2- (4- methoxybenzoyl base) benzoic acid, 2- methyl-1,4- phthalic acid, 5- methylbenzene -1,3- diformazan
Acid, 2- methyl benzofuran -7- formic acid, 3- methyl benzofuran -2- formic acid, 3- methyl benzofuran -5- formic acid, 6- methyl -
Coumarilic acid, 2- methyl benzo [b] thiophene-7- formic acid, 3- methyl benzothiophene-2- formic acid, 5- methyl-1-benzo
Thiophene -2-carboxylic acid, 6- methyl benzo [b] thiophene -2-carboxylic acid, 2- methyl -5- benzoxazoles formic acid, 5- morpholinyl -2- nitrobenzene
Formic acid, (R)-N- Bezyl-piperidin -2- formic acid, (S)-N- Bezyl-piperidin -2- formic acid, 3- nitro -1,2- phthalic acid, 4- nitre
Base -1,3- phthalic acid, 1- nitrobenzene -3,4,5- tricarboxylic acid, 5- nitro-l,2,3 benzene tricarboxylic acid, 5- nitrobenzofuran -
2- formic acid, 5- nitro -1- benzothiophene -2- formic acid, 2- (4-nitrophenoxy) benzoic acid, 3- oxo -3H- benzo [f] color
Alkene -2- formic acid, 2- (2-propynyl oxygroup) benzoic acid, 4- (2- pyrimidine radicals oxygroup) benzoic acid, 5- sulfo group -1,2,4- benzene front three
Acid and phenyl tetrafluoride -1,4- dioctyl phthalate.
Benzotriazole may include selected from least one of the group being made up of: 1- allyl benzotriazole, 1- ammonia
Base benzotriazole, 2- amino benzotriazole, 5- amino benzotriazole, 2- aminotriazole(ATA), aminotriazole(ATA), double ethyl hexyl oxy benzene
Phenol methoxybenzene triazine (bemotrizinol), benthiozole, benzimidazole, 2,1- benzisothiazole, benznidazole, benzene assistant bar
Than appropriate, 2,4-dis 3-ethyl hexane, benzofuran alcohol, benzonitrile, benzpinacol, 2-[4-morpholinodithio amine, benzothiazole, benzothiazole-d, benzo
Thiazoline, 4- benzothiazole alcohol, 5- benzothiazole alcohol, 2-[4-morpholinodithio ketone, 1H-1,2,3- benzotriazole, 1H- benzotriazole,
Benzotriazole, benzotriazole-d4, benzotrichloride, benzotrifluoride, benzoxazoles, benzoxazolone, benzoic methyl nitroazole, 2- benzene first
Acyl group thiazole, benzthiazuron (benzthiazuron), 4- benzyl isothiazole, betazole (betazole), Yekuzuo
(bismerthiazol), peso bent azoles (bisoctrizole), 5- bromine benzotriazole, bumetrizole (bumetrizole), fourth
Base benzotriazole, 5- carboxyl benzotriazole, 1- chlorobenzotriazole, 5- chlorobenzotriazole, clotrimazole (clotrimazole), enlightening
U.S. azoles (demetridazole), Dimetridazole, etisazole (etisazole), Grandox fumigant (etridiazole), fluorine U.S. azoles
(fluotrimazole), furidazol (fuberidazole), I-hydroxybenzotriazole, 4- hydroxybenzotriazole, hydroxy benzo
Triazole, 2- iodine benzothiazole, labetalol (labetalol), metronidazole, Neticonazole (neticonazole), 5- nitro benzo
Triazole, Octrizole (octrizole), 1- oxygroup benzotriazole, 5- methyl-1 H- thiazole simultaneously [4,5-d] -1,2,3- triazole,
Tetrazolium, methylbenzotrazole and triazolam (triazolam).
Chelating amino acids agent may include selected from least one of the group that is made up of: Ac- glycine, glycine,
Glycine -13C, glycine -2,2-d, glycine-N, N, O-d, glycine-d, L- glycine, N- glycine, Z- glycine,
Z- Glycine amide, glycine anhydride, glycine benzyl base ester, glycine -1-13C, glycine -2-13C, glycine citrate,
It is glycine cobalt salt, glycine cresol red, glycine ethyl ester, glycine-d2-N-fmoc, glycine fumarate, soybean, sweet
Propylhomoserin -1-13C-15N, glycine -13C2-15N, glycine -15N, pharmaceutical grade glycine, glycine-phosphate, SILVER REAGENT
Glycine, glycine sodium salt, glycine sulfate, glycine thymol blue, glycine dimethylbenzamide-d, glycine two
Toluidines, glycine zinc salt, Boc- glycine, DNP- glycine, glycerol, glycine amide, glycinate, glycitin, sugar
Base, gucosamine, glycosine, MTH- glycine, polyglycine, PTH- glycine, TNP- glycine and triglycine.
By the complexing agent that acrylamide and aminomethylpropanol form may include in the group being made up of extremely
Few one: 2- acrylic acid, propyl- 2- olefin(e) acid, 2- acrylic anhydride, 2- acrylic acid ethyl ester homopolymer, 2- acrylate homopolymer, 2-
Acrylate homopolymer sodium, 2- acrylic acid 2- isocyanatoethyl ester, 2- Isodecyl base ester, 2- acrylic acid 2- Nonyl
Ester, 2- acrylic acid 1,1 '-(1,9- nonane diyl) ester, 2- acrylic acid 1,1 '-(1,3- phenylene) ester, 2- acrylic acid -3- benzene
Base-(3Z) -3- hexene base ester, 2- acrylic acid and the polymer of 2- methacrylaldehyde, the polymer of 2- acrylic acid and methacrylaldehyde, L-2-
Alanine, 2 bromopropionic acid, 2- cyclopropyl-phenyl formic acid, 2,2- dipropyl valeric acid, 3- ethyoxyl -2- acrylic acid, 2- fluoropropene
Acid, 3- (2- furyl)-acrylic acid, 3- indole acrylic acid, 2- isopropoxy benzoic acid, 2- isopropyl acid, 3- isopropyl
Yl benzoic acid, 4- isopropyl acid, 2- methoxypropionic acid, Acetylformic acid, 3- oxopropanoic acid, cinnamic acid,
Propionic acid, propiolic acid, propionic acid, 2- propionyl yl benzoic acid, 4- propionyl yl benzoic acid, 2- positive propoxy benzoic acid, 4- positive propoxy benzene
Formic acid, to propoxy benzoic acid, propionic acid, 4- propylbenzoic acid, 4- n-propylbenzene formic acid, 2- propylheptanoic acid, 3- propylheptanoic acid,
The amyl- d15 acid of 2- propyl caproic acid, 2- propylmalonic acid, 2- propyloctanoic acid, valproic acid, 2- propyl, 2- propyl -2- amylene
Acid, poly- (acrylamide acrylic acid), gathers 2- (rosickyite base) benzoic acid, valproic acid, 2- propine sulfonic acid, polyacrylamide
(acrylamide-co-acrylic acid), polyacrylamide flocculant, polyacrylamide (linear), polyacrylamide (PAM), propylene
Amide, N- allyl acrylamide, diacrylamine, glycamide, glycyclamide (glycyclamide), N- octyl third
Acrylamide, polyamide, 1- amino-2-methyl propan-2-ol, 2-amino-2-methyl-1-propanol, 2- amino-2-methyl propyl- 1-
Alcohol, 2- amino-2-methyl propyl alcohol-d, 2- amino-2-methyl propyl alcohol 8- bromine theophylline, 2-amino-2-methyl-1-propanol hydrochloride,
3- amino -2,2- dimethyl -1- propyl alcohol, 3- amino -2,2- dimethyl propyl alcohol, amino methyl cyclopropane, 1- (amino methyl) ring
Propyl alcohol, 1- amino-2-methyl propane, 2- amino-2-methyl propane and 1- amino-2-methyl propane -2- mercaptan.
Oxidant can be hydrogen peroxide, and diluent can be deionized water.
As set forth above, the serosity combination according to the present invention for CMP is used for known in the art
The slurries of CMP compared to recess and erosion can be made to minimize, while maintain stable Cu to remove rate and make Cu and Ta it
Between selectivity remove rate maximize, thus prevent the defect in polished surface.
Specific embodiment
Hereinafter, the embodiment of the present invention will be described in greater detail.
Although the present invention will be described in more detail referring to embodiment, it will be appreciated that these embodiments are for illustration purposes only
And it provides and the limitation present invention cannot be construed in any way.
Will be seen that by each embodiment and example, the serosity combination of the invention formed by following component and this
The slurries for becoming known for CMP in technology are minimized compared to that can make to be recessed with erosion, while stable Cu being maintained to remove rate
And so that the selectivity between Cu and Ta is removed rate and maximize, thus prevent the defect in polished surface.
Serosity combination of the invention may include the different thiophene of the abrasive material of 0.1wt% to 10wt%, 0.01wt% to 1 wt%
Azoles dispersion stabilizer, the benzene carboxylic acid corrosion inhibitor of 0.01wt% to 1wt%, 0.01wt% to 15wt% chelating amino acids
The complexing agent of agent and 0.01wt% to 1wt% being made of acrylamide and aminomethylpropanol.Serosity combination of the invention
It further comprise oxidant and diluent.
In addition, corrosion inhibitor can be prepared by the way that benzotriazole is added to benzene carboxylic acid.
Moreover, abrasive material may include having cross-linked structure and average particle diameter for the colloidal silicon dioxide of 20nm to 130nm
Or aluminium oxide.
Moreover, in serosity combination of the invention, isothiazole dispersion stabilizer, by benzene carboxylic acid or benzotriazole (1,2,
3- benzotriazole) composition corrosion inhibitor, chelating amino acids agent and the complexing being made of acrylamide and aminomethylpropanol
Agent can be selected from least one of group being made of two or more derivative.
Example 1
By the colloidal silicon dioxide abrasive material comprising 1wt%, the isothiazole dispersion stabilizer of 0.1wt%, 0.5 wt% benzene
Carboxylic acid (1,2,3,4- ethylene-dimalonic acid) corrosion inhibitor, the chelating amino acids agent of 12wt%, 1 wt% by acrylamide and
The slurries of the oxidant of the complexing agent and 1wt% of aminomethylpropanol composition are diluted with diluent (DI water), and in the following conditions
Under evaluated.
Table 1
<polishing condition: auspicious not Lake Shen (Reflexion) LK, BKM formula (scene, 1 wt% of oxidant)>
Example 2
By the colloidal silicon dioxide abrasive material comprising 1wt%, the isothiazole dispersion stabilizer of 0.1wt%, 1 wt% by
The benzene carboxylic acid (1,2,3,4- ethylene-dimalonic acid) of 0.4wt% and benzotriazole (the chloro- 1- methoxyl group-benzo three of 6- of 0.6wt%
Azoles) corrosion inhibitor of composition, the chelating amino acids agent of 12wt%, 1wt% be made of acrylamide and aminomethylpropanol
Complexing agent and the slurries of oxidant of 1wt% diluted with diluent (DI water), and evaluated under the following conditions.It will knot
Fruit is compared with the result of example 1.
Table 2
<polishing condition: auspicious not Lake Shen LK, BKM formula (scene, oxidant 1wt%)>
As the result above shown in, it can be seen that the serosity combination of example 1 Cu remove rate, selectivity (Cu:Ta) and
Recess aspect shows the ability better than example 2.It can be seen that, it is more usually used than in technique that offer is used alone in benzene carboxylic acid
The better effect of benzotriazole corrosion inhibitor, and benzene carboxylic acid (1,2,3,4- ethylene-dimalonic acid or 1,3,5- benzenetricarboxylic acids) is made
Increase Cu removal rate for the miscellaneous function of abrasive material, while the function enhancing selectivity as substitution complexing agent is (Cu:Ta) and recessed
Fall into performance.
Example 3
Slurries are prepared in a manner of identical with example 2, only the benzene carboxylic acid (1,2,3,4- by 0.4wt% of 1wt%
Ethylene-dimalonic acid) and 0.6wt% benzotriazole (the chloro- 1- methoxyl group-benzotriazole of 6-) composition corrosion inhibitor by 2,
2 '-[(1H- benzotriazole -1- ylmethyl) imino group] di-methylcarbinols are replaced as benzotriazole component.It comments under the following conditions
Valence slurries.
Table 3
<polishing condition: auspicious not Lake Shen LK, BKM formula (scene, oxidant 1wt%)>
It such as can be seen that from result above, example 2 is shown in terms of Cu removes rate, selectivity (Cu:Ta) and recess than real
The good ability of example 3.
Example 4
Slurries are prepared in a manner of identical with example 1, only use the complexing agent being made of acrylamide.Following
Under the conditions of evaluate slurries.
Table 4
<polishing condition: auspicious not Lake Shen LK, BKM formula (scene, 1 wt% of oxidant)>
It such as can be seen that from result above, it is better than example 4 that example 1 is shown in terms of Cu removes rate and selectivity (Cu:Ta)
Ability.It can be seen that, the mixture of acrylamide used in the present invention and aminomethylpropanol is selected with commonly used in increasing
Property acrylamide compared to enhancing selectivity.
Example 5
Slurries are prepared in a manner of identical with example 1, only 1,2,3,4- ethylene-dimalonic acids are by 1,3,5- benzenetricarboxylic acid
To replace.Slurries are evaluated under the following conditions.
Table 5
<polishing condition: auspicious not Lake Shen LK, BKM formula (scene, 1 wt% of oxidant)>
It such as can be seen that from result above, example 1 shows the ability better than example 5 in terms of Cu removes rate and recess.This
It is because showing the benzene carboxylic acid of same type is as the miscellaneous function of abrasive material and replaces the function of complexing agent different
Cu removes rate (this depends on its structure), this can improve the dishing effect of abrasive material again.
Example 6
Slurries are prepared in a manner of identical with example 1, only chelating agent (glycine) is by EDTA (ethylenediamine tetra-acetic acid)
To replace.Slurries are evaluated under the following conditions.
Table 6
<polishing condition: auspicious not Lake Shen LK, BKM formula (scene, oxidant 1.0wt%)>
It such as can be seen that from result above, example 1 shows the ability better than example 6 in terms of recess.This is because even if
Deterioration can be showed due to the uneven polishing when Cu is removed with the identical Cu chelating agent for removing the same type of rate
Be recessed performance, this depends on its ability as chelating agent.
As set forth above, some embodiments are disclosed in the description.In addition, although some specific terms disclosed herein,
It is to be understood that these terms only provide by way of illustration and should not be construed as in any way limiting the present invention.Therefore, affiliated
The technical staff in field it will be appreciated that can make without departing from the spirit and scope of the present invention various modifications, variation and
Change.Therefore, the scope of the present invention will be limited only by the appended claims and its equivalent.
Claims (7)
1. a kind of serosity combination, it includes:
The abrasive material of 0.1wt% to 10wt%,
The isothiazole dispersion stabilizer of 0.01wt% to 1wt%,
The corrosion inhibitor of 0.5wt% to 1wt%,
The chelating amino acids agent of 0.01wt% to 15wt%, and
The complexing agent of 0.01wt% to 1wt% being made of acrylamide and aminomethylpropanol,
Wherein the corrosion inhibitor is 1,2,3,4- ethylene-dimalonic acid.
2. serosity combination according to claim 1, wherein the abrasive material includes the average particle with 20nm to 130nm
The colloidal silicon dioxide or aluminium oxide of diameter.
3. serosity combination according to claim 1, wherein the isothiazole dispersion stabilizer includes selected from by with the following group
At at least one of group: 5- chloro-2-methyl -3 (2H)-isothiazolone, 5- chloro-2-methyl -2H- isothiazole -3- ketone salt
Hydrochlorate, 2- amino -4- 5-chloromethyl thiazole (7250-84-2), the chloro- 5- aminomethylthiazole of 2-, 2- chloro- 4- (chloromethyl) thiazole,
2- chloro-5-chloromethyl thiazole, 3- chloro- 2,2- dimethyl-n- (1,3- thiazol-2-yl) propionamide, the chloro- 5- of 2- (ethoxyl methyl)
Thiazole, 5- (2- chloroethyl) -4- methylthiazol, 2- (1- chloroethyl) thiazole, the chloro- N- ethyl -5- thiazole methylamine of 2-, the chloro- 5- of 2-
Hydroxymethyl thiazole, 2- chloro- 5- (methoxy) thiazole, the chloro- 6- methyl -2-[4-morpholinodithio amine of 5-, 6- chloro-2-methyl benzo
The chloro- 6- methylbenzothiazole -2- base amine of thiazole, 5-, the chloro- 6- of 2- (1- Methylethyl) benzothiazole, 5- (chloromethyl) -4- second
Base -2- methyl-1,3-thiazole, 4- (chloromethyl) -2- ethyl -1,3- thiazole, 4- (chloromethyl) -2- isopropyl thiazole, 4- (chloromethane
Base) -2- (2- aminomethyl phenyl) -1,3- thiazole, 4- (chloromethyl) -2- (3- aminomethyl phenyl) -1,3- thiazole, 4- (chloromethyl) -2-
(4- aminomethyl phenyl) -1,3- thiazole, 4- (chloromethyl) -2- methyl-1,3-thiazole, 5- chloro-2-methyl -6- nitrobenzene thiazole,
4- (chloromethyl) -2- phenyl -1,3- thiazole, 4- (chloromethyl) -2- propyl -1,3- thiazole, 4- (chloromethyl)-abadol, 2-
The chloro- 4- methYl-thiazol of (chloromethyl)-thiazole, 2-, the chloro- 5- methylthiazol of 2-, 4- (chloromethyl) -1,3- thiazole, 4- (chloromethyl)
The chloro- 4- methylthiazol of thiazole, 4- 5-chloromethyl thiazole, 5-, 5- 5-chloromethyl thiazole, the chloro- 4- methylthiazol -5- sulfonamide of 2-, 2- are chloro-
The chloro- 4- methyl-thiazole-5-sulfonic acid chloride of 4- methyl-thiazole-5-sulfonamide, 2-, the chloro- N- of 2- (4- methyl-1,3-thiazole-2- base)
Acetamide, 4- (4- chlorphenyl) -5- ethyl -1,3- thiazole -2- amine, 4- (3- chlorphenyl) -5- methyl-1,3-thiazole -2- amine, 4-
(4- chlorphenyl) -5- methyl-1,3-thiazole -2- amine, 4- (the chloro- phenyl of 4-) -2- methYl-thiazol, 2- chloro- 6- (trifluoromethyl) benzene
And thiazole, the chloro- 2- methyl-benzothiazole of 4,6- bis-, 4- (2,4 dichloro benzene base) -5- methyl-1,3-thiazole -2- amine and 3-
Ethyoxyl -5- chloromethyl isothiazole.
4. serosity combination according to claim 1, wherein the chelating amino acids agent includes to be selected to be made up of
At least one of group: glycine, glycine -13C, glycine -2,2-d, L- glycine, N- glycine, Z- glycine, sweet
Propylhomoserin -1-13C, glycine -2-13C, glycine -1-13C-15N, glycine -13C2-15N, glycine -15N and SILVER REAGENT
Glycine.
5. serosity combination according to claim 1, wherein acrylamide in the group being made up of at least
One: polyamide, polyacrylamide, poly- (acrylamide acrylic acid), poly- (acrylamide-co-acrylic acid), polyacrylamide wadding
Solidifying agent, polyacrylamide (linear), polyacrylamide (PAM), acrylamide, N- allyl acrylamide, diacrylamine, miaow
Azoles bisamide, N- octyl acrylamide and 8- bromine theophylline, and aminomethylpropanol in the group being made up of at least
One: 1- amino-2-methyl propan-2-ol, 2-amino-2-methyl-1-propanol, 2- amino-2-methyl propyl- 1- alcohol, 2- amino -2-
Methylpropanol-d, 2- amino-2-methyl propyl alcohol, 2-amino-2-methyl-1-propanol hydrochloride, 3- amino -2,2- dimethyl -1-
Propyl alcohol, 3- amino -2,2- dimethyl propyl alcohol, the pure and mild 1- amino-2-methyl propane -2- mercaptan of 1- (amino methyl) cyclopropyl.
6. serosity combination according to claim 1, further includes: oxidant and diluent, wherein the oxidation
Agent is hydrogen peroxide and the diluent is deionized water.
7. serosity combination according to claim 1, wherein the serosity combination includes 1,2,3, the 4- fourths of 0.5wt%
Alkane tetracarboxylic acid.
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| CN107267970B (en) * | 2017-07-09 | 2019-08-27 | 无锡市恒利弘实业有限公司 | A kind of steelwork aqueous, environmental protective antirust agent and its preparation method and application |
| CN107299338B (en) * | 2017-07-09 | 2019-04-12 | 无锡市恒利弘实业有限公司 | A kind of steelwork aqueous, environmental protective antirust agent and its preparation method and application |
| US20190153262A1 (en) * | 2017-11-20 | 2019-05-23 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced surface scratching |
| KR102210253B1 (en) * | 2017-12-07 | 2021-02-01 | 삼성에스디아이 주식회사 | Cmp slurry composition for polishing copper and method for polishing using the same |
| CN111378378B (en) * | 2018-12-29 | 2023-09-08 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| CN114715871B (en) * | 2022-04-26 | 2023-09-12 | 四川朗晟新材料科技有限公司 | Modified lithium iron phosphate positive electrode material for lithium battery and preparation method |
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| CN1939995A (en) * | 2005-09-26 | 2007-04-04 | 富士胶片株式会社 | Aqueous polishing liquid and chemical mechanical polishing method |
| US20090156006A1 (en) * | 2006-05-02 | 2009-06-18 | Sriram Anjur | Compositions and methods for cmp of semiconductor materials |
| CN101541913A (en) * | 2006-12-22 | 2009-09-23 | 韩国泰科诺赛美材料株式会社 | Chemical mechanical polishing composition for copper comprising zeolite |
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| US6630433B2 (en) * | 1999-07-19 | 2003-10-07 | Honeywell International Inc. | Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride |
| JP2008181955A (en) * | 2007-01-23 | 2008-08-07 | Fujifilm Corp | Polishing liquid for metal and polishing method using the same |
| KR100949250B1 (en) * | 2007-10-10 | 2010-03-25 | 제일모직주식회사 | Metal CMP slurry compositions and polishing method using the same |
| JP5587620B2 (en) * | 2010-01-25 | 2014-09-10 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method using the same |
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| CN1939995A (en) * | 2005-09-26 | 2007-04-04 | 富士胶片株式会社 | Aqueous polishing liquid and chemical mechanical polishing method |
| US20090156006A1 (en) * | 2006-05-02 | 2009-06-18 | Sriram Anjur | Compositions and methods for cmp of semiconductor materials |
| CN101541913A (en) * | 2006-12-22 | 2009-09-23 | 韩国泰科诺赛美材料株式会社 | Chemical mechanical polishing composition for copper comprising zeolite |
| CN102212315A (en) * | 2010-04-08 | 2011-10-12 | 福吉米株式会社 | Polishing composition and polishing method |
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