CN104419326A - Slurry composition for chemical and mechanical polishing - Google Patents
Slurry composition for chemical and mechanical polishing Download PDFInfo
- Publication number
- CN104419326A CN104419326A CN201410071795.5A CN201410071795A CN104419326A CN 104419326 A CN104419326 A CN 104419326A CN 201410071795 A CN201410071795 A CN 201410071795A CN 104419326 A CN104419326 A CN 104419326A
- Authority
- CN
- China
- Prior art keywords
- acid
- chloro
- methyl
- glycine
- amino
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Abstract
The invention discloses a slurry composition including 0.1wt%-10wt% of abradant, 0.01 wt%-1wt% of isothiazole dispersion stabilizer, 0.01wt%-1wt% of benzene carboxylic acid corrosion inhibitor, 0.01wt%-15wt% of amino acid chelate agent, and 0.01wt%-1wt% of complexing agent including acrylamide and aminomethyl propanol.Compared with slurry special for polishing, the slurry composition can reduce the recess and erosion under high-speed CMP technology, and meanwhile can maintain stable Cu removing rate and make the selective removing rate between Cu and Ta maximum, and therefore no flaws may be left on a surface to be polished.
Description
Technical field
The present invention relates to the serosity combination for chemically machinery polished (CMP).More particularly, the present invention relates to the serosity combination for CMP, it comprises abrasive material, dispersion agent, stablizer, corrosion inhibitor, sequestrant and oxygenant, described serosity combination can make the depression under high speed CMP and erosion minimum, guarantee that stable Cu removes speed and the selectivity between maximized Cu and Ta removes speed simultaneously, defect can not be caused on the surface to be polished thus.
Background technology
Along with the development of semiconductor technology, line width constantly microminiaturization and the importance of therefore complanation increases.Especially, along with the increase that semi-conductor is integrated, multilevel interconnect structure is introduced.The employing with the photoetching technique of more short wavelength has caused the problem of the scene degree of depth (depth of field, DOF).For effectively solving problems, the operability of CMP increases further.
CMP is a kind of technique for planarized wafer surface, its by polishing pad is attached to rotate on a surface of a wafer or eccentric movement polishing block surface on and make to rub at the front surface place of wafer, supply the slurries comprising abrasive material simultaneously and implement.
More particularly, from slurries to slurries/wafer between border and its character through improvement wafer surface on mechanical polishing be mass transfer step; And the mechanical polishing on reactant to the absorption or wafer surface on surface is surface reaction step.In fact, carry out polishing by CMP and correspond to surface reaction step, and mass transfer step to be successive reaction necessary.
During surface reaction, chemical reaction is adsorbed onto wafer surface due to reactant and the reaction that is adsorbed onto between the reactant in the space of improvement wafer surface and wafer surface and occurring.Remove step place at machinery and remove the material sprawled in a large number on a surface of a wafer, this causes removing in interface.Reactant is fed to interface in a large number, and make successive reaction thus and reactant is transferred to slurries/wafer surface from slurries, this guarantees mechanical/chemical polishing.
Typical CMP process still needs to suppress depression and erosion, maintains stable Cu simultaneously and removes speed and make the selectivity between Cu and Ta remove speed maximization, prevent the defect in polished surface thus.
Summary of the invention
Target of the present invention is to provide and can makes to cave in and the minimized serosity combination of erosion compared with CMP slurry fluid composition known in technique, maintain stable Cu to remove speed and make the selectivity between Cu and Ta remove speed maximization simultaneously, prevent the defect in polished surface thus.
According to an aspect of the present invention, serosity combination comprises: the abrasive material of 0.1wt% to 10wt%, the isothiazole dispersion stabilizer of 0.01wt% to 1wt%, 0.01wt% to 1wt% by benzene carboxylic acid or benzotriazole (1,2,3-benzotriazole) form corrosion inhibitor, the chelating amino acids agent of 0.01wt% to 15wt%, the complexing agent be made up of acrylamide and aminomethylpropanol of 0.01wt% to 1wt%, oxygenant and thinner.
Abrasive material can comprise and has crosslinking structure and average particle diameter is colloidal silicon dioxide or the aluminum oxide of 20nm to 130nm.
Isothiazole dispersion stabilizer can comprise at least one be selected from by the following group formed: 5-chloro-2-methyl-3 (2H)-isothiazolones, 5-chloro-2-methyl-2H-isothiazole-3-keto hydrochloride, the chloro-4-methylbenzothiazole of 2-amino-5-, the chloro-4-methylbenzothiazole of 2-amino-7-, 2-amino-4-5-chloromethyl thiazole (7250-84-2), 10-(chloracetyl)-2-(methylthio group)-10H-thiodiphenylamine, the chloro-5-aminomethylthiazole of 2-, the chloro-4-of 2-(chloromethyl) thiazole, 2-chloro-5-chloromethyl thiazole, the chloro-2-of 5-(4-Chlorophenylmethyl)-3 (2H)-isothiazolones, chloro-N, the N-dimethyl-2-[4-morpholinodithio amine of 6-, chloro-4, the 5-dimethyl-benzothiazole of 2-, chloro-4, the 6-dimethyl-benzothiazoles of 2-, chloro-4, the 7-dimethyl-benzothiazoles of 2-, the chloro-N-of 2-(5,6-dimethyl-2-[4-morpholinodithio base) ethanamide, chloro-2, the 2-dimethyl-n-of 3-(1,3-thiazoles-2-base) propionic acid amide, the chloro-5-of 2-(ethoxyl methyl) thiazole, 3-chloro-2-ethyl-1,2-benzisothiazole muriate, 5-(2-chloroethyl)-4-methylthiazol, 2-(1-chloroethyl) thiazole, the chloro-N-ethyl of 2--5-thiazole methylamine, 2-chloro-5-hydroxymethyl thiazole, the chloro-5-of 2-(methoxymethyl) thiazole, the chloro-5-methyl of 7--2H-1,4-benzothiazine-3 (4H)-one, the chloro-6-methyl-2-[4-morpholinodithio amine of 5-, 2-(chloromethyl)-1,3-benzothiazole, the chloro-4-methylbenzothiazole of 2-, the chloro-5-methylbenzothiazole of 2-, the chloro-6-methylbenzothiazole of 2-, 2-Chloromethyl-benzothiazole, 5-chloro-2-methyl benzothiazole, 6-chloro-2-methyl benzothiazole, 3-(chloromethyl)-2 (3H) benzothiazolone, the chloro-4-methyl-2 of 7-(3H)-benzothiazolone, 3-chloromethyl-3H-benzothiazole-2-thioketones, the chloro-6-methylbenzothiazole of 5--2-base amine, the chloro-4-methylbenzothiazole of 6--2-base amine, the chloro-3-methyl of 6--3H-benzothiazole-2-ylidene amines, the chloro-6-of 2-(1-methylethyl) benzothiazole, 5-(chloromethyl)-4-Ethyl-2-Methyl-1,3-thiazoles, 4-(chloromethyl)-2-ethyl-1,3-thiazoles, 4-(chloromethyl)-2-sec.-propyl thiazole, CMIT, CMIT calcium chloride, CMIT, 4-(chloromethyl)-2-(2-aminomethyl phenyl)-1,3-thiazoles, 4-(chloromethyl)-2-(3-aminomethyl phenyl)-1,3-thiazoles, 4-(chloromethyl)-2-(4-aminomethyl phenyl)-1,3-thiazoles, 4-(chloromethyl)-2-methyl isophthalic acid, 3-thiazole, 5-chloro-2-methyl-6-nitrobenzene thiazole, (3-chloro-2-methyl-phenyl)-(4,5-dihydro-thiazol-2-base)-amine, the chloro-5-of 3-(4-aminomethyl phenyl) isothiazole-4-formonitrile HCN, 4-(chloromethyl)-2-phenyl-1,3-thiazoles, 4-(chloromethyl)-2-propyl group-1,3-thiazoles, 5-chloro-2-methyl-3-(4-sulfonic group butyl) benzothiazolium salt, 4-(chloromethyl)-abadol, 2-(chloromethyl)-thiazole, the chloro-4-methYl-thiazol of 2-, the chloro-5-methylthiazol of 2-, 4-(chloromethyl)-1,3-thiazoles, 4-(chloromethyl) thiazole, 4-5-chloromethyl thiazole, the chloro-4-methylthiazol of 5-, 5-5-chloromethyl thiazole, the chloro-4-methylthiazol of 2--5-sulphonamide, the chloro-4-methyl-thiazole-5-sulphonamide of 2-, the chloro-4-methyl-thiazole-5-SULPHURYL CHLORIDE of 2-, the chloro-N-of 2-(4-methyl isophthalic acid, 3-thiazol-2-yl) ethanamide, 2-[(chloromethyl) sulfenyl] benzothiazole, 4-(4-chloro-phenyl-)-5-ethyl-1,3-thiazoles-2-amine, 3-(the chloro-2-phenylethyl of 2-)-2-thiazolidine imines, 2-(4-Chlorophenylmethyl)-3 (2H)-isothiazolones, 4-(3-chloro-phenyl-)-5-methyl isophthalic acid, 3-thiazole-2-amine, 4-(4-chloro-phenyl-)-5-methyl isophthalic acid, 3-thiazole-2-amine, 4-(the chloro-phenyl of 4-)-2-methYl-thiazol, trans-5-(4-chloro-phenyl-)-4-methyl-2-thiazolidone, the chloro-4-of 2-(trifluoromethyl) benzothiazole, the chloro-6-of 2-(trifluoromethyl) benzothiazole, the chloro-4-methyl isophthalic acid of 2,7-bis-, 3-benzothiazole, the chloro-2-methyl-benzothiazole of 4,6-bis-, 4-(2,4 dichloro benzene base)-5-methyl isophthalic acid, 3-thiazole-2-amine, 3-oxyethyl group-5-chloromethyl isothiazole and methylchloroisothiazandnone.
Corrosion inhibitor can be made up of benzene carboxylic acid or benzotriazole (1,2,3-benzotriazole).Herein, benzene carboxylic acid can comprise at least one be selected from by the following group formed: amino-1, the 3-phthalic acid of 5-, 2-amino-Isosorbide-5-Nitrae-phthalic acid, amino-1, the 2-phthalic acid of 3-, 5-amino-benzene-1,3-dioctyl phthalate, 3-amino-benzene thiophene-2-carboxylic acid, 1-amino-benzene-2,4,5-tricarboxylic acid, 1-amino-benzene-2,4,6-tricarboxylic acid, 1-amino-benzene-3,4,5-tricarboxylic acid, amino-1,2, the 3-benzene tricarboxylic acid of 5-, 2-aminobenzophenone-2'-formic acid, 5-amino-1-thionaphthene-2-formic acid, 4-amino-2-fluorobenzoic acid, 4-amino-3-fluorobenzoic acid, 4-amino-O-Anisic Acid, 5-amino-2-morpholinyl benzoic acid, 2-(4-amino-benzene oxygen) phenylformic acid, nitrogen benzide-3,3'-dioctyl phthalate, nitrogen benzide-4,4'-dioctyl phthalate, N-benzanilide-4,4'-dioctyl phthalate, 1,2-phthalic acid, 1,3-phthalic acid, Isosorbide-5-Nitrae-phthalic acid, benzene-1,3-dioctyl phthalate diallyl ester, 1,2-phthalic acid didecyl ester, 1,2-phthalic acid dinonyl ester, 1,2-phthalic acid diamyl ester, mellitic acid, mellitic acid hexamethyl ester, benzene pentacarboxylic acid, 1,2,4,5-benzene tetracarboxylic acid, 1,2,4,5-benzene tetracarboxylic acid-d, benzene-1,2,3,4-tetracarboxylic acid, 1,2,3-benzene tricarboxylic acid, 1,2,4-benzene tricarboxylic acid, 1,3,5-benzene-d3-tricarboxylic acid, 1,3,5-benzene tricarboxylic acid, benzene-1,2,4-tricarboxylic acid, benzene-1,3,5-tricarboxylic acid, 1,2,3-benzene tricarboxylic acid 2-hydrate, 1-dibenzo-p-methyl-aza-cyclobutane-3-formic acid, 1-dibenzo-p-methyl-aza-cyclobutane-2-formic acid, 1-dibenzo-p-methyl-aza-cyclobutane-3-formic acid, (1H)-benzoglyoxaline-7-formic acid, 1H-benzimidazolyl-2 radicals-formic acid, 1H-benzoglyoxaline-4-formic acid, 1H-benzoglyoxaline-5-formic acid, 1H-benzoglyoxaline-7-formic acid, 2-benzoglyoxaline formic acid, 5-benzoglyoxaline formic acid, benzoglyoxaline-5-formic acid, benzimidazole-5,6-dimethyl acid, 2,1-benzisothiazole-3-formic acid, 2,1-benzoisoxazole-3-formic acid, 1-benzocyclobutane zinecarboxylic acid, (R)-Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-5-formic acid, (R)-Isosorbide-5-Nitrae-benzodioxan-2-formic acid, (S)-Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-6-formic acid, 1,3-benzodioxole-2-formic acid, 1,3-benzodioxole-4-formic acid, benzo [1,3] dioxole-2-formic acid, 1-cumarone-3-formic acid, 1-cumarone-5-formic acid, 2,3-coumarilic acid, 2-benzofurancarboxylic acid, benzo (b) furans-2-formic acid, coumarilic acid, cumarone-3-formic acid, cumarone-4-formic acid, cumarone-6-formic acid, cumarone-7-formic acid, 2,3-cumarone dioctyl phthalate, benzofuraxan-5-formic acid, benzo furoxan-5-formic acid, 3H-benzo [e] indole-2-carboxylic acid, benzo [d] isoxazole-3-formic acid, benzo [d] oxazole-6-formic acid, benzoxazole-2-formic acid, BP-2-formic acid, UVINUL MS 40,4'-dioctyl phthalate, 3,3', 4,4'-benzophenone tetracarboxylic, benzophenone tetracarboxylic, BP-3,3', 4,4'-tetracarboxylic acid, benzo [b] tellurium fen-2-formic acid, 1,2,3-benzothiazole-5-formic acid, 1,3-benzothiazole-6-formic acid, benzo [d] thiazole-7-formic acid, benzothiazole-2-formic acid, benzothiazole-5-formic acid, benzothiazole-6-formic acid, 1-thionaphthene-3-formic acid, 1-thionaphthene-5-formic acid, benzo [b] thiophene-2-carboxylic acid, benzo [b] thiophene-3-formic acid, benzo [b] thiophene-7-formic acid, benzo [b] thiophene-7-formic acid, thionaphthene-2-formic acid, 1H-benzotriazole-5-formic acid, benzotriazole-4-formic acid, 5-benzoxazole formic acid, 3-(benzoyl-amido)-2-thiophenic acid, 1-benzoyl-3-azetidinecarboxylic acid, 2-2-benzoyl-cyclohexane formic acid, cis-2-2-benzoyl-cyclohexane-1-formic acid, 2-benzoyl-1H-indole-3-carboxylic acid, 1-benzoyl piperidine-2-formic acid, 1-benzoyl piperidine-4-formic acid, 2-benzoyl-acidum nicotinicum, 3-benzoyl pyridine-2-formic acid, 1-benzoyl pyrrole compound alkane-2-formic acid, 3-benzoyl-4-quinolinecarboxylic acid, 3-benzoyl quinoline-4-formic acid, 3-benzoyl-2-thiophenic acid, 1-(benzyl) azetidine-2-formic acid, 1-benzyl-2-azetidinecarboxylic acid, 1-benzyl-azetidine-3-formic acid, 1-benzyl-azetidine-3-formic acid, 1-benzyl azetidine-2-benzoic acid amides, 1-benzyl-4-boc-piperazine-2-formic acid, 1-benzyl rings butane-1-formic acid, 1-benzyl cyclobutane formate, 1-benzyl cyclobutane formate, 1-benzyl naphthenic acid, 1-benzyl rings cyclopentane carboxylic acid, 1-benzyl cyclopropane-carboxylic acid, 1-benzyl-1H-indazole-3-formic acid, 1-benzylindole base-3-formic acid, 1-benzylindole-3-formic acid, 2-benzyl isoindoline-4-formic acid, 4-Benzyl-morpholin-2-formic acid, 4-Benzyl-morpholin-3-formic acid, 4-Benzvlmorpholin-3-formic acid, 3-benzyl-2-oxazolidine formic acid, 3-benzyl oxygen base-cyclobutane formate, 4-benzyloxyindole-2-formic acid, 5-benzyl oxygen base-2-indolecarboxylic acid, 5-benzyloxyindole-2-formic acid, 6-benzyl Oxy-1 H-indole-2-carboxylic acid, 6-benzyl Oxy-1 H-indole-3-carboxylic acid, 7-benzyl Oxy-1 H-indole-3-carboxylic acid, 6-(benzyl oxygen base) pyridine-2-formic acid, 8-(benzyl oxygen base) quinoline-7-formic acid, (R)-4-benzyl diethylenediamine-2-formic acid, 1-benzyl-1,3-piperazine dioctyl phthalate, 1-benzyl-Pipecolic Acid, 1-benzyl piepridine-3-formic acid, 1-benzyl piepridine-4-formic acid, 1-benzy-pyrrolidin-3-formic acid, N-benzyl-3-pyrrolidinecarboxylic acid, 2-(benzyl sulfenyl) phenylformic acid, 2-benzyl-thiazole alkane-4-formic acid, 2-dibenzyl formic acid, 5-bromo-benzoic acid, bromo-1, the 3-phthalic acid of 4-, 4-bromobenzene-1,2-dioctyl phthalate, bromo-1, the 3-phthalic acid of 5-, 7-bromobenzofuran-2-formic acid, the bromo-1-coumarilic acid of 5-, 3-bromobenzothiophene-2-formic acid, the bromo-1-thionaphthene of 4--2-formic acid, the bromo-1-thionaphthene of 5--2-formic acid, 5-bromobenzene is [b] thiophene-3-formic acid also, the bromo-1-thionaphthene of 6--2-formic acid, the bromo-1-thionaphthene of 7--2-formic acid, 5-bromo-2-benzoxazole formic acid, 3-(tert.-butoxy) phenylformic acid, the 5-tertiary butyl-1,3-phthalic acid, 2-chlorobenzofur-5-formic acid, 3-chlorobenzofur-5-formic acid, 5-chlorobenzofur-2-formic acid, 4'-chlorobenzophenone-2-formic acid, 3-chlorobenzene is [b]-2-thiophenic acid also, 3-chlorobenzene is [b] thiophene-2-carboxylic acid also, the chloro-1-thionaphthene of 4--2-formic acid, the chloro-1-thionaphthene of 5--2-formic acid, 5-chlorobenzene is [b] thiophene-3-formic acid also, the chloro-1-thionaphthene of 6--2-formic acid, the chloro-1-thionaphthene of 7--2-formic acid, 7-chlorobenzene is [b] thiophene-2-carboxylic acid also, 5-chloro-2-benzoxazole formic acid, the chloro-5-hydroxy-benzoic acid of 2-, the chloro-4-morpholinyl benzoic acid of 2-, diphenylene-oxide-3-formic acid, diphenylene-oxide-4-formic acid, Isosorbide-5-Nitrae-dibenzylpiperazine-2-formic acid, the bromo-O-Anisic Acid of 3,5-bis-, the fluoro-4-nitrobenzoic acid of 2,5-bis-, the fluoro-2-nitrobenzoic acid of 4,5-bis-, 2,3-Dihydrobenzofuranes-7-formic acid, 3,4-dinitrobenzene-1,2-phthalic acid, 4,6-dinitrobenzene-1,3-phthalic acid, 2,5-diphenyl benzene-Isosorbide-5-Nitrae-dioctyl phthalate, 7-oxyethyl group cumarone-2-formic acid, 4-fluorobenzene-1,3-dioctyl phthalate, fluoro-1, the 3-benzo dioxine-8-formic acid of 6-, the fluoro-1-thionaphthene of 4--2-formic acid, the fluoro-1-thionaphthene of 5--2-formic acid, the fluoro-1-thionaphthene of 7--2-formic acid, the fluoro-4-nitrobenzoic acid of 2-, the fluoro-4-nitrobenzoic acid of 3-, 2-hydroxybenzene bamic acid, 4-hydroxyl-1,2-phthalic acid, 5-hydroxybenzene-1,2,4-tricarboxylic acid, 4-hydroxyl benzofuran-3-formic acid, 4'-dihydroxy benaophenonel-2-formic acid, 4-(2-hydroxyl-oxethyl) phenylformic acid, 3-iodobenzene-1,2-dioctyl phthalate, iodo-1, the 2-phthalic acid of 4-, the iodo-benzo of 4-[b] thiophene-2-carboxylic acid, 4-(isopentyloxy) phenylformic acid, 5-Methoxvbenzofuran-2-formic acid, 7-Methoxvbenzofuran-2-formic acid, 2-(4-anisoyl) phenylformic acid, 2-methyl isophthalic acid, 4-phthalic acid, 5-methylbenzene-1,3-dioctyl phthalate, 2-methyl benzofuran-7-formic acid, 3-methyl benzofuran-2-formic acid, 3-methyl benzofuran-5-formic acid, 6-methl-benzofuran-2-formic acid, 2-methyl benzo [b] thiophene-7-formic acid, 3-methyl benzothiophene-2-formic acid, 5-methyl isophthalic acid-thionaphthene-2-formic acid, 6-methyl benzo [b] thiophene-2-carboxylic acid, 2-methyl-5-benzoxazole formic acid, 5-morpholinyl-2-nitrobenzoic acid, (R)-N-Bezyl-piperidin-2-formic acid, (S)-N-Bezyl-piperidin-2-formic acid, 3-nitro-1,2-phthalic acid, 4-nitro-1,3-phthalic acid, 1-oil of mirbane-3,4,5-tricarboxylic acid, 5-nitro-1,2,3-benzene tricarboxylic acid, 5-nitrobenzofuran-2-formic acid, 5-nitro-1-thionaphthene-2-formic acid, 2-(4-nitrophenoxy) phenylformic acid, 3-oxo-3H-benzo [f] chromene-2-formic acid, 2-(2-propynyl oxygen base) phenylformic acid, 4-(2-pyrimidyl oxygen base) phenylformic acid, 5-sulfo group-1,2,4-benzene tricarboxylic acid and tetra fluoro benzene-Isosorbide-5-Nitrae-dioctyl phthalate.
Benzotriazole can comprise at least one be selected from by the following group formed: 1-allyl group benzotriazole, the amino benzotriazole of 1-, the amino benzotriazole of 2-, the amino benzotriazole of 5-, 2-aminotriazole, aminotriazole, two ethylhexyloxyphenol anisole triazine (bemotrizinol), benthiozole, benzoglyoxaline, 2,1-benzisothiazole, Rochagan, benzobarbital, Benzoestrol, cumarone alcohol, cyanobenzene, benzpinacone, 2-[4-morpholinodithio amine, benzothiazole, benzothiazole-d, benzothiazoline, 4-benzothiazole alcohol, 5-benzothiazole alcohol, 2-[4-morpholinodithio ketone, 1H-1,2,3-benzotriazole, 1H-benzotriazole, benzotriazole, benzotriazole-d4, trichlorotoluene zotrichloride, phenylfluoroform, benzoxazole, benzoxazolone, benzoic methyl nitroazole, 2-benzoyl thiazole, benzthiazuron (benzthiazuron), 4-benzyl isothiazole, Betazole (betazole), bismerthiazol (bismerthiazol), peso bent azoles (bisoctrizole), 5-bromine benzotriazole, bumetrizole (bumetrizole), butyl benzotriazole, 5-carboxyl benzotriazole, 1-chlorobenzotriazole, 5-chlorobenzotriazole, clotrimazole (clotrimazole), dimetridazole (demetridazole), Dimetridazole, Netrosylla (etisazole), etridiazole (etridiazole), the U.S. azoles (fluotrimazole) of fluorine, fuberidazole (fuberidazole), I-hydroxybenzotriazole, 4-hydroxybenzotriazole, hydroxybenzotriazole, 2-iodine benzothiazole, Trate (labetalol), metronidazole, neticonazole (neticonazole), 5-nitrobenzene and triazolam, Viosorb 583 (octrizole), 1-oxygen base benzotriazole, 5-methyl isophthalic acid H-thiazole also [4,5-d]-1,2,3-triazoles, tetrazolium, Methylbenzotriazole and triazolam (triazolam).
Chelating amino acids agent can comprise at least one be selected from by the following group formed: Ac-glycine, glycine, glycine-13C, glycine-2,2-d, glycine-N, N, O-d, glycine-d, L-glycine, N-glycine, Z-glycine, Z-Glycine amide, glycine anhydride, glycine benzyl ester, glycine-1-13C, glycine-2-13C, glycine Citrate trianion, glycine cobalt salt, glycine o-cresolsulfonphthalein, glycine ethyl ester, glycine-d2-N-fmoc, glycine fumarate, soybean, glycine-1-13C-15N, glycine-13C2-15N, glycine-15N, pharmaceutical grade glycine, glycine-phosphate, SILVER REAGENT glycine, glycine sodium salt, Triglycine sulfate, glycine thymolsulfonphthalein, glycine dimethylbenzamide-d, glycine xylidene(s), glycine zinc salt, Boc-glycine, DNP-glycine, glycerine, G-NH2, glycinate, glycitin, glycosyl, glucosamine, glyeosine, MTH-glycine, polyglycine, PTH-glycine, TNP-glycine and triglycine.
The complexing agent be made up of acrylamide and aminomethylpropanol can comprise at least one be selected from by the following group formed: 2-vinylformic acid, third-2-olefin(e) acid, 2-acrylic anhydride, 2-acrylic acid ethyl ester homopolymer, 2-acrylate homopolymer, 2-acrylate homopolymer sodium, 2-vinylformic acid 2-isocyanatoethyl ester, 2-Isodecyl base ester, 2-vinylformic acid 2-Nonyl ester, 2-vinylformic acid 1,1'-(1,9-nonane two base) ester, 2-vinylformic acid 1,1'-(1,3-phenylene) ester, 2-vinylformic acid-3-phenyl-(3Z)-3-hexenyl ester, the polymkeric substance of 2-vinylformic acid and 2-propenal, the polymkeric substance of 2-vinylformic acid and propenal, L-2-alanine, 2 bromopropionic acid, 2-cyclopropyl-phenyl formic acid, 2,2-dipropyl valeric acid, 3-oxyethyl group-2-vinylformic acid, 2-perfluoroalkyl acrylate, 3-(2-furyl)-vinylformic acid, 3-indole acrylic acid, 2-isopropoxy phenylformic acid, 2-isopropyl acid, 3-isopropyl acid, 4-isopropyl acid, 2-methoxypropionic acid, Acetylformic acid, 3-oxopropanoic acid, cinnamic acid, propionic acid, propynoic acid, propionic acid, 2-propionyl phenylformic acid, 4-propionyl phenylformic acid, 2-positive propoxy phenylformic acid, 4-positive propoxy phenylformic acid, to propoxy benzoic acid, propionic acid, 4-propylbenzoic acid, 4-n-propylbenzene formic acid, 2-propylheptanoic acid, 3-propylheptanoic acid, 2-propyl group caproic acid, 2-propylmalonic acid, 2-propyloctanoic acid, valproic acid, 2-propyl group penta-d15 acid, 2-propyl group-2-pentenoic acid, 2-(rosickyite base) phenylformic acid, valproic acid, 2-propine sulfonic acid, polyacrylamide, poly-(acrylamide acrylic acid), poly-(acrylamide-co-acrylic acid), polyacrylamide flocculant, polyacrylamide (linearly), polyacrylamide (PAM), acrylamide, N-allyl group acrylamide, diacrylamine, glycamide, tolhexamide (glycyclamide), N-octyl acrylamide, polymeric amide, 1-amino-2-methyl propan-2-ol, 2-amino-2-methyl-1-propanol, 2-amino-2-methyl third-1-alcohol, 2-amino-2-methyl propyl alcohol-d, 2-amino-2-methyl propyl alcohol 8-bromine theophylline, 2-amino-2-methyl-1-propanol hydrochloride, amino-2, the 2-dimethyl-1-propyl alcohol of 3-, amino-2, the 2-dimethyl propyl alcohol of 3-, amino methyl cyclopropane, 1-(amino methyl) ring propyl alcohol, 1-amino-2-methyl propane, 2-amino-2-methyl propane and 1-amino-2-methyl propane-2-mercaptan.
Oxygenant can be hydrogen peroxide, and thinner can be deionized water.
As above state, serosity combination for CMP according to the present invention can make depression and erosion minimize compared with the slurries for CMP known in technique, maintain stable Cu remove speed and make the selectivity between Cu and Ta remove speed maximization simultaneously, prevent the defect in polished surface thus.
Embodiment
Hereinafter, embodiments of the invention will be described in more detail.
Although describe in more detail the present invention with reference to embodiment, should be appreciated that these embodiments only provide and can not be interpreted as by any way limiting the present invention for purpose of explanation.
To be found out by each embodiment and example, the serosity combination of the present invention formed by following component can make depression and erosion minimize compared with becoming known for the slurries of CMP in technique, maintain stable Cu remove speed and make the selectivity between Cu and Ta remove speed maximization simultaneously, prevent the defect in polished surface thus.
Serosity combination of the present invention can comprise the complexing agent be made up of acrylamide and aminomethylpropanol of the abrasive material of 0.1wt% to 10wt%, the isothiazole dispersion stabilizer of 0.01wt% to 1wt%, the benzene carboxylic acid corrosion inhibitor of 0.01wt% to 1wt%, the chelating amino acids agent of 0.01wt% to 15wt% and 0.01wt% to 1wt%.Serosity combination of the present invention comprises oxygenant and thinner further.
In addition, corrosion inhibitor is by adding benzene carboxylic acid to prepare by benzotriazole.
And abrasive material can comprise and has crosslinking structure and average particle diameter is colloidal silicon dioxide or the aluminum oxide of 20nm to 130nm.
And, in serosity combination of the present invention, isothiazole dispersion stabilizer, by benzene carboxylic acid or benzotriazole (1,2,3-benzotriazole) at least one in the group that forms of corrosion inhibitor, chelating amino acids agent and two or more derivative of the optional freedom of complexing agent of being made up of acrylamide and aminomethylpropanol of forming.
Example 1
Colloidal silicon dioxide abrasive material, the isothiazole dispersion stabilizer of 0.1wt%, the benzene carboxylic acid (1 of 0.5wt% of 1wt% will be comprised, 2,3,4-ethylene-dimalonic acid) corrosion inhibitor, the chelating amino acids agent of 12wt%, the complexing agent be made up of acrylamide and aminomethylpropanol of 1wt% and 1wt% slurries thinner (DI water) dilution of oxygenant, and to evaluate under the following conditions.
Table 1
< polishing condition: auspicious not Rec Shen (Reflexion) LK, BKM formula (on-the-spot, oxygenant 1wt%) >
Example 2
By comprise the colloidal silicon dioxide abrasive material of 1wt%, the isothiazole dispersion stabilizer of 0.1wt%, 1wt% by the benzene carboxylic acid (1 of 0.4wt%, 2,3,4-ethylene-dimalonic acid) and the benzotriazole (the chloro-1-methoxyl group-benzotriazole of 6-) of 0.6wt% form corrosion inhibitor, the chelating amino acids agent of 12wt%, the complexing agent be made up of acrylamide and aminomethylpropanol of 1wt% and 1wt% slurries thinner (DI water) dilution of oxygenant, and to evaluate under the following conditions.By result compared with the result of example 1.
Table 2
< polishing condition: auspicious not Rec Shen LK, BKM formula (on-the-spot, oxygenant 1wt%) >
As shown in above result, can find out that the serosity combination of example 1 removes at Cu the ability that in speed, selectivity (Cu:Ta) and depression, displaying is better than example 2.Can find out, benzene carboxylic acid is used alone provides effect more better than benzotriazole corrosion inhibitor normally used in technique, and benzene carboxylic acid (1,2,3,4-ethylene-dimalonic acid or 1,3,5-benzene tricarboxylic acid) increase Cu as the subsidiary function of abrasive material and remove speed, simultaneously the function of complexing agent strengthens selectivity (Cu:Ta) and the performance that caves in as an alternative.
Example 3
With the mode prepared slarry identical with example 2, just 1wt% by the benzene carboxylic acid (1 of 0.4wt%, 2,3,4-ethylene-dimalonic acid) and the corrosion inhibitor that forms of the benzotriazole (the chloro-1-methoxyl group-benzotriazole of 6-) of 0.6wt% replaced as benzotriazole component by 2,2'-[(1H-benzotriazole-1-ylmethyl) imino-] di-methylcarbinol.Evaluate slurries under the following conditions.
Table 3
< polishing condition: auspicious not Rec Shen LK, BKM formula (on-the-spot, oxygenant 1wt%) >
As found out from above result, example 2 removes at Cu the ability that in speed, selectivity (Cu:Ta) and depression, displaying is better than example 3.
Example 4
With the mode prepared slarry identical with example 1, just use the complexing agent be made up of acrylamide.Evaluate slurries under the following conditions.
Table 4
< polishing condition: auspicious not Rec Shen LK, BKM formula (on-the-spot, oxygenant 1wt%) >
As found out from above result, example 1 removes at Cu the ability that in speed and selectivity (Cu:Ta), displaying is better than example 4.Can find out, the mixture of acrylamide used in the present invention and aminomethylpropanol be generally used for increasing optionally enhancing selectivity compared with acrylamide.
Example 5
With the mode prepared slarry identical with example 1, just 1,2,3,4-ethylene-dimalonic acid is replaced by 1,3,5-benzene tricarboxylic acid.Evaluate slurries under the following conditions.
Table 5
< polishing condition: auspicious not Rec Shen LK, BKM formula (on-the-spot, oxygenant 1wt%) >
As found out from above result, example 1 removes at Cu the ability that in speed and depression, displaying is better than example 5.This is because even if the benzene carboxylic acid of identical type also represents different Cu as the subsidiary function of abrasive material and the function of replacement complexing agent remove speed (this depends on its structure), this can improve again the dishing effect of abrasive material.
Example 6
With the mode prepared slarry identical with example 1, just sequestrant (glycine) is replaced by EDTA (ethylenediamine tetraacetic acid (EDTA)).Evaluate slurries under the following conditions.
Table 6
< polishing condition: auspicious not Rec Shen LK, BKM formula (on-the-spot, oxygenant 1.0wt%) >
As found out from above result, example 1 shows the ability better than example 6 in depression.This is because even if having sequestrant that identical Cu removes the identical type of speed can represent deterioration depression performance due to the uneven polishing when Cu removes, this depends on its ability as sequestrant.
As above state, diagram and specification sheets in disclose some embodiments.In addition, although disclose some particular term herein, should be appreciated that, these terms only provide by way of illustration and should not be interpreted as by any way limiting the present invention.Therefore, it will be understood by one of ordinary skill in the art that and can make various amendment, change and change when not deviating from the spirit and scope of the present invention.Therefore, scope of the present invention will only be subject to the restriction of appended claims and its equivalent.
Claims (10)
1. a serosity combination, it comprises:
The abrasive material of 0.1wt% to 10wt%,
The isothiazole dispersion stabilizer of 0.01wt% to 1wt%,
The benzene carboxylic acid corrosion inhibitor of 0.01wt% to 1wt%,
The chelating amino acids agent of 0.01wt% to 15wt%, and
The complexing agent be made up of acrylamide and aminomethylpropanol of 0.01wt% to 1wt%.
2. serosity combination according to claim 1, wherein said abrasive package is containing the colloidal silicon dioxide of average particle diameter or the aluminum oxide with crosslinking structure and 20nm to 130nm.
3. serosity combination according to claim 1, wherein said isothiazole dispersion stabilizer comprises at least one be selected from by the following group formed: 5-chloro-2-methyl-3 (2H)-isothiazolones, 5-chloro-2-methyl-2H-isothiazole-3-keto hydrochloride, the chloro-4-methylbenzothiazole of 2-amino-5-, the chloro-4-methylbenzothiazole of 2-amino-7-, 2-amino-4-5-chloromethyl thiazole (7250-84-2), 10-(chloracetyl)-2-(methylthio group)-10H-thiodiphenylamine, the chloro-5-aminomethylthiazole of 2-, the chloro-4-of 2-(chloromethyl) thiazole, 2-chloro-5-chloromethyl thiazole, the chloro-2-of 5-(4-Chlorophenylmethyl)-3 (2H)-isothiazolones, 6-chlorine, N, N-dimethyl-2-[4-morpholinodithio amine, chloro-4, the 5-dimethyl-benzothiazole of 2-, chloro-4, the 6-dimethyl-benzothiazoles of 2-, chloro-4, the 7-dimethyl-benzothiazoles of 2-, the chloro-N-of 2-(5,6-dimethyl-2-[4-morpholinodithio base) ethanamide, chloro-2, the 2-dimethyl-n-of 3-(1,3-thiazoles-2-base) propionic acid amide, the chloro-5-of 2-(ethoxyl methyl) thiazole, 3-chloro-2-ethyl-1,2-benzisothiazole muriate, 5-(2-chloroethyl)-4-methylthiazol, 2-(1-chloroethyl) thiazole, the chloro-N-ethyl of 2--5-thiazole methylamine, 2-chloro-5-hydroxymethyl thiazole, the chloro-5-of 2-(methoxymethyl) thiazole, the chloro-5-methyl of 7--2H-1,4-benzothiazine-3 (4H)-one, the chloro-6-methyl-2-[4-morpholinodithio amine of 5-, 2-(chloromethyl)-1,3-benzothiazole, the chloro-4-methylbenzothiazole of 2-, the chloro-5-methylbenzothiazole of 2-, the chloro-6-methylbenzothiazole of 2-, 2-Chloromethyl-benzothiazole, 5-chloro-2-methyl benzothiazole, 6-chloro-2-methyl benzothiazole, 3-(chloromethyl)-2 (3H) benzothiazolone, the chloro-4-methyl-2 of 7-(3H)-benzothiazolone, 3-chloromethyl-3H-benzothiazole-2-thioketones, the chloro-6-methylbenzothiazole of 5--2-base amine, the chloro-4-methylbenzothiazole of 6--2-base amine, the chloro-3-methyl of 6--3H-benzothiazole-2-ylidene amines, the chloro-6-of 2-(1-methylethyl) benzothiazole, 5-(chloromethyl)-4-Ethyl-2-Methyl-1,3-thiazoles, 4-(chloromethyl)-2-ethyl-1,3-thiazoles, 4-(chloromethyl)-2-sec.-propyl thiazole, CMIT, CMIT calcium chloride, CMIT, 4-(chloromethyl)-2-(2-aminomethyl phenyl)-1,3-thiazoles, 4-(chloromethyl)-2-(3-aminomethyl phenyl)-1,3-thiazoles, 4-(chloromethyl)-2-(4-aminomethyl phenyl)-1,3-thiazoles, 4-(chloromethyl)-2-methyl isophthalic acid, 3-thiazole, 5-chloro-2-methyl-6-nitrobenzene thiazole, (3-chloro-2-methyl-phenyl)-(4,5-dihydro-thiazol-2-base)-amine, the chloro-5-of 3-(4-aminomethyl phenyl) isothiazole-4-formonitrile HCN, 4-(chloromethyl)-2-phenyl-1,3-thiazoles, 4-(chloromethyl)-2-propyl group-1,3-thiazoles, 5-chloro-2-methyl-3-(4-sulfonic acid foundation butyl) benzothiazolium salt, 4-(chloromethyl)-abadol, 2-(chloromethyl)-thiazole, the chloro-4-methYl-thiazol of 2-, the chloro-5-methylthiazol of 2-, 4-(chloromethyl)-1,3-thiazoles, 4-(chloromethyl) thiazole, 4-5-chloromethyl thiazole, the chloro-4-methylthiazol of 5-, 5-5-chloromethyl thiazole, the chloro-4-methylthiazol of 2--5-sulphonamide, the chloro-4-methyl-thiazole-5-sulphonamide of 2-, the chloro-4-methyl-thiazole-5-SULPHURYL CHLORIDE of 2-, the chloro-N-of 2-(4-methyl isophthalic acid, 3-thiazol-2-yl) ethanamide, 2-[(chloromethyl) sulfenyl] benzothiazole, 4-(4-chloro-phenyl-)-5-ethyl-1,3-thiazoles-2-amine, 3-(the chloro-2-phenylethyl of 2-)-2-thiazolidine imines, 2-(4-Chlorophenylmethyl)-3 (2H)-isothiazolones, 4-(3-chloro-phenyl-)-5-methyl isophthalic acid, 3-thiazole-2-amine, 4-(4-chloro-phenyl-)-5-methyl isophthalic acid, 3-thiazole-2-amine, 4-(the chloro-phenyl of 4-)-2-methYl-thiazol, trans-5-(4-chloro-phenyl-)-4-methyl-2-thiazolidone, the chloro-4-of 2-(trifluoromethyl) benzothiazole, the chloro-6-of 2-(trifluoromethyl) benzothiazole, the chloro-4-methyl isophthalic acid of 2,7-bis-, 3-benzothiazole, the chloro-2-methyl-benzothiazole of 4,6-bis-, 4-(2,4 dichloro benzene base)-5-methyl isophthalic acid, 3-thiazole-2-amine, 3-oxyethyl group-5-chloromethyl isothiazole and methylchloroisothiazandnone.
4. serosity combination according to claim 1, wherein said benzene carboxylic acid corrosion inhibitor comprises 1,2,3,4-ethylene-dimalonic acid or 1,3,5-benzene tricarboxylic acid.
5. serosity combination according to claim 1, wherein said benzene carboxylic acid corrosion inhibitor comprises at least one be selected from by the following group formed: 1,2,3,4-ethylene-dimalonic acid, 1,2,3,4-ethylene-dimalonic acid dianhydride, 1-amino tetramethylene-1-formic acid, the amino cyclobutane formate of 1-, the amino cyclobutane formate of 3-, 1-benzyl cyclobutane formate, 1-bromine cyclobutane formate, Isosorbide-5-Nitrae-butane dioctyl phthalate, 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTC), 1,2,4-butane tricarboxylic acid, 3-chlorine cyclobutane formate, 1-cyanocyclobutane formic acid, cyclobutane formate, (1R, 2S)-tetramethylene-1,2-dioctyl phthalate, 1,1-tetramethylene dioctyl phthalate, 1,3-tetramethylene dioctyl phthalate, trans-1,3-tetramethylene dioctyl phthalate, 1,2,3,4-cyclobutanetetracarboxylic, tetramethylene-1,1,3,3-tetracarboxylic acid, 3,3-dichloro cyclobutane formate, 3,3-difluoro cyclobutane formate, (-)-2,3-dimethylbutane-1,2,3-tricarboxylic acid, 3,3-dimethylcyclobutane formic acid, 3-fluorine cyclobutane formate, 3-hydroxycyclobutane formic acid, meso-butane-1,2,3,4-tetracarboxylic acid, 3-methoxyl group cyclobutane formate, 1-methyl cyclobutane formic acid, 3-methyl cyclobutane formic acid, 3-methylene radical cyclobutane formate, 3-oxo-cyclobutane formate, 1-benzcyclobutane formic acid, 1,3-acetonedicarboxylic acid, 1,2,4,5-benzene tetracarboxylic acid, 1,2,4,5-benzene tetracarboxylic acid-d6, benzene-1,2,3,4-tetracarboxylic acid, benzene-1,2,4,5-tetracarboxylic acid, 1,2,3-benzene tricarboxylic acid, 1,2,4-benzene tricarboxylic acid, 1,3,5-benzene tricarboxylic acid, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,3,4,5,6-hexanaphthene pregnancy acid, 1,3,5-hexanaphthene tricarboxylic acid, 1,2,4-pentamethylene-3-methyl-tetracarboxylic acid, 1,2,3,4-cyclopentane, suitable, suitable, cis-1,2,3,4-cyclopentane, ethane tricarboxylic acid, 2,4-furandicarboxylic acid, 3,4-furandicarboxylic acid, Isosorbide-5-Nitrae, 5,8-naphthalenetetracarbacidic acidic, 1,8-octane dicarboxylic acid, 3-trimethylene oxide formic acid, 1,2,3,4,5-pentane five formic acid, 1,3,5-pentane tricarboxylic acid, 1,2,3-propane tricarboxylic acid, pyrazine tetracarboxylic acid, 1,2,3,4-tetrahydroharman-3-formic acid, 1-tetraline-formic acid, 2-tetraline-formic acid, 1,2,4-triazine-3-formic acid, 1,2,3-triazoles-4-formic acid and 1,2,4-triazole-3-formic acid.
6. serosity combination according to claim 1, wherein said chelating amino acids agent comprises at least one be selected from by the following group formed: Ac-glycine, glycine, glycine-13C, glycine-2,2-d, glycine-N, N, O-d, glycine-d, L-glycine, N-glycine, Z-glycine, Z-Glycine amide, glycine anhydride, glycine benzyl ester, glycine-1-13C, glycine-2-13C, glycine Citrate trianion, glycine cobalt salt, glycine o-cresolsulfonphthalein, glycine ethyl ester, glycine-d2-N-fmoc, glycine fumarate, soybean, glycine-1-13C-15N, glycine-13C2-15N, glycine-15N, pharmaceutical grade glycine, glycine-phosphate, SILVER REAGENT glycine, glycine sodium salt, Triglycine sulfate, glycine thymolsulfonphthalein, glycine dimethylbenzamide-d, glycine xylidene(s), glycine zinc salt, Boc-glycine, DNP-glycine, glycerine, G-NH2, glycinate, glycitin, glycosyl, glucosamine, glyeosine, MTH-glycine, polyglycine, PTH-glycine, TNP-glycine and triglycine.
7. serosity combination according to claim 1, wherein said complexing agent comprises at least one be selected from by the following group formed: 2-vinylformic acid, third-2-olefin(e) acid, 2-acrylic anhydride, 2-acrylic acid ethyl ester homopolymer, 2-acrylate homopolymer, 2-acrylate homopolymer sodium, 2-vinylformic acid 2-isocyanatoethyl ester, 2-Isodecyl base ester, 2-vinylformic acid 2-Nonyl ester, 2-vinylformic acid 1,1'-(1,9-nonane two base) ester, 2-vinylformic acid 1,1'-(1,3-phenylene) ester, 2-vinylformic acid-3-phenyl-(3Z)-3-hexenyl ester, the polymkeric substance of 2-vinylformic acid and 2-propenal, the polymkeric substance of 2-vinylformic acid and propenal, L-2-alanine, 2 bromopropionic acid, 2-cyclopropyl-phenyl formic acid, 2,2-dipropyl valeric acid, 3-oxyethyl group-2-vinylformic acid, 2-perfluoroalkyl acrylate, 3-(2-furyl)-vinylformic acid, 3-indole acrylic acid, 2-isopropoxy phenylformic acid, 2-isopropyl acid, 3-isopropyl acid, 4-isopropyl acid, 2-methoxypropionic acid, Acetylformic acid, 3-oxopropanoic acid, cinnamic acid, propionic acid, propynoic acid, propionic acid, 2-propionyl phenylformic acid, 4-propionyl phenylformic acid, 2-positive propoxy phenylformic acid, 4-positive propoxy phenylformic acid, to propoxy benzoic acid, propionic acid, 4-propylbenzoic acid, 4-n-propylbenzene formic acid, 2-propylheptanoic acid, 3-propylheptanoic acid, 2-propyl group caproic acid, 2-propylmalonic acid, 2-propyloctanoic acid, valproic acid, 2-propyl group penta-d15 acid, 2-propyl group-2-pentenoic acid, 2-(rosickyite base) phenylformic acid, valproic acid, 2-propine sulfonic acid, polyacrylamide, poly-(acrylamide acrylic acid), poly-(acrylamide-co-acrylic acid), polyacrylamide flocculant, polyacrylamide (linearly), polyacrylamide (PAM), acrylamide, N-allyl group acrylamide, diacrylamine, glycamide, tolhexamide, N-octyl acrylamide, polymeric amide, 1-amino-2-methyl propan-2-ol, 2-amino-2-methyl-1-propanol, 2-amino-2-methyl third-1-alcohol, 2-amino-2-methyl propyl alcohol-d, 2-amino-2-methyl propyl alcohol 8-bromine theophylline, 2-amino-2-methyl-1-propanol hydrochloride, amino-2, the 2-dimethyl-1-propyl alcohol of 3-, amino-2, the 2-dimethyl propyl alcohol of 3-, amino methyl cyclopropane, 1-(amino methyl) ring propyl alcohol, 1-amino-2-methyl propane, 2-amino-2-methyl propane and 1-amino-2-methyl propane-2-mercaptan.
8. serosity combination according to claim 1, it comprises further: oxygenant and thinner, and wherein said oxygenant is hydrogen peroxide and described thinner is deionized water.
9. serosity combination according to claim 1, wherein said corrosion inhibitor prepares by being added in described benzene carboxylic acid corrosion inhibitor by benzotriazole corrosion inhibitor.
10. serosity combination according to claim 9, wherein said benzotriazole comprises at least one be selected from by the following group formed: the chloro-1-methoxyl group-benzotriazole of 6-, 1-allyl group benzotriazole, the amino benzotriazole of 1-, the amino benzotriazole of 2-, the amino benzotriazole of 5-, 2-aminotriazole, aminotriazole, two ethylhexyloxyphenol anisole triazine, benthiozole, benzoglyoxaline, 2,1-benzisothiazole, Rochagan, benzobarbital, Benzoestrol, cumarone alcohol, cyanobenzene, benzpinacone, 2-[4-morpholinodithio amine, benzothiazole, benzothiazole-d, benzothiazoline, 4-benzothiazole alcohol, 5-benzothiazole alcohol, 2-[4-morpholinodithio ketone, 1H-1,2,3-benzotriazole, 1H-benzotriazole, benzotriazole, benzotriazole-d4, trichlorotoluene zotrichloride, phenylfluoroform, benzoxazole, benzoxazolone, benzoic methyl nitroazole, 2-benzoyl thiazole, benzthiazuron, 4-benzyl isothiazole, Betazole, bismerthiazol, peso bent azoles, 5-bromine benzotriazole, bumetrizole, butyl benzotriazole, 5-carboxyl benzotriazole, 1-chlorobenzotriazole, 5-chlorobenzotriazole, clotrimazole, dimetridazole, Dimetridazole, Netrosylla, etridiazole, the U.S. azoles of fluorine, fuberidazole, I-hydroxybenzotriazole, 4-hydroxybenzotriazole, hydroxybenzotriazole, 2-iodine benzothiazole, Trate, metronidazole, neticonazole, 5-nitrobenzene and triazolam, Viosorb 583, 1-oxygen base benzotriazole, 5-methyl isophthalic acid H-thiazole also [4,5-d]-1,2,3-triazoles, tetrazolium, Methylbenzotriazole and triazolam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810790107.9A CN109054648A (en) | 2013-08-30 | 2014-02-28 | Serosity combination for chemically mechanical polishing |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2013-0104201 | 2013-08-30 | ||
| KR1020130104201A KR101573113B1 (en) | 2013-08-30 | 2013-08-30 | Slurry Composition for Chemical Mechanical Polishing |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810790107.9A Division CN109054648A (en) | 2013-08-30 | 2014-02-28 | Serosity combination for chemically mechanical polishing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104419326A true CN104419326A (en) | 2015-03-18 |
Family
ID=52969469
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410071795.5A Pending CN104419326A (en) | 2013-08-30 | 2014-02-28 | Slurry composition for chemical and mechanical polishing |
| CN201810790107.9A Pending CN109054648A (en) | 2013-08-30 | 2014-02-28 | Serosity combination for chemically mechanical polishing |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810790107.9A Pending CN109054648A (en) | 2013-08-30 | 2014-02-28 | Serosity combination for chemically mechanical polishing |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101573113B1 (en) |
| CN (2) | CN104419326A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107267970A (en) * | 2017-07-09 | 2017-10-20 | 无锡市福吉电子科技有限公司 | A kind of steelwork aqueous, environmental protective antirust agent and its preparation method and application |
| CN107299338A (en) * | 2017-07-09 | 2017-10-27 | 无锡市福吉电子科技有限公司 | A kind of steelwork aqueous, environmental protective antirust agent and its preparation method and application |
| WO2017204035A1 (en) * | 2016-05-26 | 2017-11-30 | 富士フイルム株式会社 | Polishing solution, method for producing polishing solution, polishing solution stock solution, and chemomechanical polishing method |
| CN111378378A (en) * | 2018-12-29 | 2020-07-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| CN111655809A (en) * | 2017-11-20 | 2020-09-11 | 嘉柏微电子材料股份公司 | Compositions and methods for polishing memory hard disks exhibiting reduced surface scratching |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102210253B1 (en) * | 2017-12-07 | 2021-02-01 | 삼성에스디아이 주식회사 | Cmp slurry composition for polishing copper and method for polishing using the same |
| CN114715871B (en) * | 2022-04-26 | 2023-09-12 | 四川朗晟新材料科技有限公司 | Modified lithium iron phosphate positive electrode material for lithium battery and preparation method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1738928A (en) * | 2000-12-20 | 2006-02-22 | 霍尼韦尔国际公司 | Compositions for copper, tantalum and tantalum nitride chemical mechanical method complanation |
| CN1939995A (en) * | 2005-09-26 | 2007-04-04 | 富士胶片株式会社 | Aqueous polishing liquid and chemical mechanical polishing method |
| CN101230238A (en) * | 2007-01-23 | 2008-07-30 | 富士胶片株式会社 | Metal-polishing liquid and polishing method therewith |
| US20090095939A1 (en) * | 2007-10-10 | 2009-04-16 | Cheil Industries Inc. | Slurry Composition for Chemical Mechanical Polishing of Metal and Polishing Method Using the Same |
| US20090156006A1 (en) * | 2006-05-02 | 2009-06-18 | Sriram Anjur | Compositions and methods for cmp of semiconductor materials |
| CN101541913A (en) * | 2006-12-22 | 2009-09-23 | 韩国泰科诺赛美材料株式会社 | Chemical mechanical polishing composition for copper comprising zeolite |
| US20110180511A1 (en) * | 2010-01-25 | 2011-07-28 | Fujimi Incorporated | Polishing Composition and Polishing Method Using the Same |
| CN102212315A (en) * | 2010-04-08 | 2011-10-12 | 福吉米株式会社 | Polishing composition and polishing method |
-
2013
- 2013-08-30 KR KR1020130104201A patent/KR101573113B1/en active IP Right Review Request
-
2014
- 2014-02-28 CN CN201410071795.5A patent/CN104419326A/en active Pending
- 2014-02-28 CN CN201810790107.9A patent/CN109054648A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1738928A (en) * | 2000-12-20 | 2006-02-22 | 霍尼韦尔国际公司 | Compositions for copper, tantalum and tantalum nitride chemical mechanical method complanation |
| CN1939995A (en) * | 2005-09-26 | 2007-04-04 | 富士胶片株式会社 | Aqueous polishing liquid and chemical mechanical polishing method |
| US20090156006A1 (en) * | 2006-05-02 | 2009-06-18 | Sriram Anjur | Compositions and methods for cmp of semiconductor materials |
| CN101541913A (en) * | 2006-12-22 | 2009-09-23 | 韩国泰科诺赛美材料株式会社 | Chemical mechanical polishing composition for copper comprising zeolite |
| CN101230238A (en) * | 2007-01-23 | 2008-07-30 | 富士胶片株式会社 | Metal-polishing liquid and polishing method therewith |
| US20090095939A1 (en) * | 2007-10-10 | 2009-04-16 | Cheil Industries Inc. | Slurry Composition for Chemical Mechanical Polishing of Metal and Polishing Method Using the Same |
| US20110180511A1 (en) * | 2010-01-25 | 2011-07-28 | Fujimi Incorporated | Polishing Composition and Polishing Method Using the Same |
| CN102161879A (en) * | 2010-01-25 | 2011-08-24 | 福吉米株式会社 | Polishing composition and polishing method using the same |
| CN102212315A (en) * | 2010-04-08 | 2011-10-12 | 福吉米株式会社 | Polishing composition and polishing method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017204035A1 (en) * | 2016-05-26 | 2017-11-30 | 富士フイルム株式会社 | Polishing solution, method for producing polishing solution, polishing solution stock solution, and chemomechanical polishing method |
| JPWO2017204035A1 (en) * | 2016-05-26 | 2019-04-25 | 富士フイルム株式会社 | Polishing liquid, method of producing polishing liquid, stock solution of polishing liquid, and chemical mechanical polishing method |
| CN107267970A (en) * | 2017-07-09 | 2017-10-20 | 无锡市福吉电子科技有限公司 | A kind of steelwork aqueous, environmental protective antirust agent and its preparation method and application |
| CN107299338A (en) * | 2017-07-09 | 2017-10-27 | 无锡市福吉电子科技有限公司 | A kind of steelwork aqueous, environmental protective antirust agent and its preparation method and application |
| CN107299338B (en) * | 2017-07-09 | 2019-04-12 | 无锡市恒利弘实业有限公司 | A kind of steelwork aqueous, environmental protective antirust agent and its preparation method and application |
| CN111655809A (en) * | 2017-11-20 | 2020-09-11 | 嘉柏微电子材料股份公司 | Compositions and methods for polishing memory hard disks exhibiting reduced surface scratching |
| CN111378378A (en) * | 2018-12-29 | 2020-07-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| CN111378378B (en) * | 2018-12-29 | 2023-09-08 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150025969A (en) | 2015-03-11 |
| CN109054648A (en) | 2018-12-21 |
| KR101573113B1 (en) | 2015-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104419326A (en) | Slurry composition for chemical and mechanical polishing | |
| JP4628423B2 (en) | Polishing and manufacturing method of substrate | |
| CN1902292A (en) | Polishing composition and polishing method | |
| CN103131330B (en) | Composition for polishing and use its Ginding process | |
| KR101614745B1 (en) | Polishing liquid for metal and polishing method using the same | |
| JP6110444B2 (en) | Chemical mechanical polishing (CMP) of cobalt-containing substrates | |
| JP6258982B2 (en) | Low dishing copper chemical mechanical planarization | |
| CN1204602C (en) | Abrasive liquid for metal and method for polishing | |
| JP5613283B2 (en) | Polishing slurry composition | |
| CN100472729C (en) | Composition for copper wiring polishing and method of polishing surface of semiconductor integrated circuit | |
| KR101186110B1 (en) | Slurry composition for chemical mechanical polishing of metal film | |
| CN1939995A (en) | Aqueous polishing liquid and chemical mechanical polishing method | |
| TW200537615A (en) | Metal polishing slurry and polishing method thereof | |
| CN101356628A (en) | High throughput chemical mechanical polishing composition for metal film planarization | |
| US6805812B2 (en) | Phosphono compound-containing polishing composition and method of using same | |
| CN100394555C (en) | Method of second step polishing in copper CMP with a polishing fluid containing no oxidizing agent | |
| JP2005340755A (en) | Abrasive compound and polishing method | |
| TWI744337B (en) | Polishing agent, method for chemical mechanical polishing | |
| CN104293206A (en) | Polishing solution for processing ultra-smooth bearing steel surface and application thereof | |
| KR20150095606A (en) | Slurry Composition for Chemical Mechanical Polishing | |
| JP6723440B2 (en) | Slurry composition and method of selective polishing of silica | |
| US11999877B2 (en) | Silicon nitride chemical mechanical polishing slurry with silicon nitride removal rate enhancers and methods of use thereof | |
| JP2008118099A (en) | Polishing fluid for metal, and method of polishing film to be polished using the polishing fluid | |
| KR100949248B1 (en) | Metal CMP slurry compositions using a novel corrosion inhibitor and polishing method using the same | |
| CN101440259B (en) | Metal polishing solution and polishing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: Gyeonggi Do, South Korea Applicant after: LTCAM Ltd Address before: Gyeonggi Do, South Korea Applicant before: COWON INNOTECH, INC. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: COWON INNOTECH, INC. TO: LTCAM LTD. Free format text: CORRECT: ADDRESS; FROM: |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150318 |