CN109037174A - A kind of copper is embedded in the heat structure and preparation method thereof in graphene-based composite substrate - Google Patents

A kind of copper is embedded in the heat structure and preparation method thereof in graphene-based composite substrate Download PDF

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Publication number
CN109037174A
CN109037174A CN201810770815.6A CN201810770815A CN109037174A CN 109037174 A CN109037174 A CN 109037174A CN 201810770815 A CN201810770815 A CN 201810770815A CN 109037174 A CN109037174 A CN 109037174A
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graphene
heat
based composite
composite substrate
copper
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李宜彬
余方祥
赫晓东
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Shenzhen Enchant Technology Co Ltd
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Shenzhen Enchant Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • H01L21/4882Assembly of heatsink parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3738Semiconductor materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0075Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Abstract

The heat structure and preparation method thereof being embedded in the invention discloses a kind of copper in graphene-based composite substrate, the heat structure includes graphene-based composite substrate and high heat-conducting copper block, wherein: the graphene-based composite substrate longitudinally punches, and the high heat-conducting copper block is embedded in the hole of graphene-based composite substrate.The method comprises the following steps: 1) punched on graphene-based composite substrate;2) high heat-conducting copper block is prepared;3) the high heat-conducting copper block that step 2 obtains is embedded in the hole on the graphene-based composite substrate of step 1) with the mode of soldering, obtains the radiator structure of high thermal conductivity.Heat structure structure of the invention is simple, longitudinal high thermal conductivity block can be very good to conduct the heat of heat source along the face outside direction of high starch breeding alkene material, in conjunction with heating conduction in the excellent face of highly directional material, heat can quickly be spread, solve the problems, such as that longitudinal capacity of heat transmission is poor.

Description

A kind of copper is embedded in heat structure and its preparation in graphene-based composite substrate Method
Technical field
The invention belongs to design on material structure technical field, it is related to a kind of copper and is embedded in graphene-based composite substrate Heat structure and preparation method thereof.
Background technique
21 century LED and related industry all obtain significant progress all over the world, arrive the year two thousand twenty, global LED according to investigations Market scale is up to 150,000,000,000 dollars or so.LED have it is small in size, power consumption is low, luminous efficiency is high, long service life and The advantages such as environmentally protective, therefore also obtain the support energetically of the Chinese government.LED industry starts to walk in China's the 1970s, passes through Recent decades rapid development, market scale constantly expand.Institute's survey data is shown according to the study, and Chinese LED industry is always advised within 2015 Mould reaches 396,700,000,000 yuan, increases by 15.1% on a year-on-year basis.But as electronics and IT products are constantly miniaturized and the development of electronic technology, LED electronic product constantly puts forward higher requirements the performances such as its chip electronic high speed, high frequency operation, however inside chip electronics Element constantly generates heat under high load capacity working condition, and the heat of generation cannot scatter and disappear away in time will lead to LED chip knot Point temperature constantly increases, to seriously affect the service life of product, it is also possible to lead to light decay.According to valid data Show when LED temperature is increased to 100 DEG C by 25 DEG C of room temperature, it will lead to light output efficiency decaying 50%, reduced service life 60% or so.Therefore, heat dissipation problem is at the important bottleneck for restricting the development of LED electronic product.Therefore, grinding for heat sink material Study carefully the concern for increasingly causing scientist, there are density for traditional heat sink material-metal, artificial graphite, heat pipe etc. greatly, thermal conductivity The low, disadvantages such as heat emissivity coefficient is low, are no longer satisfied requirement of the electronic product to heat sink material and radiator structure.
Graphene is two dimensional crystal material, and there is thermal conductivity in the single-layer graphene face of perfect lattice to be up to ~ 5300W/ (mK), rare opportunity is provided to the development of heat sink material of new generation.How to utilize the thermal property of graphene becomes section The emphasis that scholars grind.One of strategy is exactly that graphene is assembled into macroscopic material, gives full play to graphene and receives and sees scale Thermal property, realize from receive see scale to macro-scale leap.
Graphene itself is the material of high anisotropy, and thermal conductivity is less than 10W/(mK outside face), it prepares at present Graphene-based heat sink material is substantially the material of graphene oriented alignment, because only that it is excellent just to give full play to graphene in this way Heating conduction in different face.However, this oriented alignment structure simultaneously results in graphene-based heat sink material along perpendicular to graphite The direction thermal conductivity of alkene layer is very low, the heating conduction of this high anisotropy, limits heat in the conduction of three-dimensional, And then the advantage of thermal conductivity in the high face of this kind of material can not be played.
Summary of the invention
In order to solve the problems, such as above-mentioned graphene-based heat sink material longitudinal direction capacity of heat transmission lower limit, it integrates the capacity of heat transmission, this Invention provides the heat structure and preparation method thereof that a kind of copper is embedded in graphene-based composite substrate.
The purpose of the present invention is what is be achieved through the following technical solutions:
A kind of copper is embedded in the heat structure in graphene-based composite substrate, including graphene-based composite substrate and height are led Hot copper billet body, in which:
The graphene-based composite substrate longitudinally punches, and the position in the hole is in graphene-based composite substrate and heat source Contact point on;
The high heat-conducting copper block is embedded in the hole of graphene-based composite substrate.
In the present invention, the height in the hole and the thickness of substrate are identical;The size and number in hole according to the size of heat source and Quantity determines that the quantity in hole can be one, be also possible to multiple;Hole knockout is CNC processing.
In the present invention, the graphene-based composite material be by matrix of graphene and graphene in material internal along graphite The three-dimensional material that alkene lamella direction (X/Y plane) aligns.
In the present invention, the height of the high heat-conducting copper block is identical with the thickness of graphene-based composite substrate.
In the present invention, the high heat-conducting copper block can be fine copper, be also possible to the copper alloy of high thermal conductivity.
In the present invention, the shape in the high heat-conducting copper block and the hole on graphene-based composite substrate is consistent, It can be cuboid, be also possible to the polyhedron of other arbitrary shapes;Lateral section can be rectangle, be also possible to trapezoidal.
In the present invention, the quantity of the high heat-conducting copper block is consistent with the quantity in hole.
A kind of preparation method of above-mentioned heat structure, includes the following steps:
1) it is punched on graphene-based composite substrate;
2) high heat-conducting copper block is prepared, in which: the processing method of the copper billet body takes the mode of first wire cutting re-polishing;Copper billet There are the surpluses of 0.1 ~ 0.3mm on each surface of body, carry out surface polishing treatment;
3) the high heat-conducting copper block that step 2 obtains is embedded in the graphene-based composite substrate of step 1) with the mode of soldering On hole in, obtain the radiator structure of high thermal conductivity, in which:
The specific steps of the soldering are as follows: using AgCuTi soldering paste as solder, be coated in graphene-based composite substrate Hole surface, the copper billet body for then obtaining step 2 is put into graphite jig together with substrate in combination, is put into soldering later Furnace waits the vacuum degree of soldering ovens to reach 10-3Pa is started to warm up and is brazed;
The soldering temperature-rise period are as follows: be warming up to 300 ~ 400 DEG C with 10 ~ 20 DEG C/min heating rate, keep the temperature 10 ~ 30min;With 20 ~ 30 DEG C/min is continuously heating to 700 ~ 800 DEG C, keeps the temperature 10 ~ 30min;Then with 5 ~ 15 DEG C/min be warming up to brazing temperature 840 ~ 860 DEG C, keep the temperature 10 ~ 30min;Sample is taken out after being cooled to room temperature after soldering.
Above-mentioned steps 1), step 2 there is no sequencing.
The invention has the following beneficial effects:
1, heat structure application range of the invention is wider, can carry out assembling use with other heat sink materials and structure, such as: and dissipate Hot fin combines, and is assembled into radiator use;Also it can be used alone, such as: being used as soaking plate;Can also be used as heat source and The connection structure of auxiliary radiating device;There are different geometry and size requirement in different applications, can use machine Tool processes the radiator structure different with Combination Design.
2, heat structure structure of the invention is simple, and longitudinal high thermal conductivity block can be very good the heat by heat source along highly directional The face outside direction of grapheme material is conducted, and in conjunction with heating conduction in the excellent face of highly directional material, heat can quickly be expanded It dissipates, solves the problems, such as that longitudinal capacity of heat transmission is poor.
3, because of thermal conductivity height (up to ~ 1500Wm in the face of graphene radiation material-1K-1) and density it is very low (1.5 ~ 2.0g/cm3), this has absolute advantage in terms of heat sink material.But its longitudinal thermal conductivity is low, so that heat is difficult from heat source It is transferred on graphene radiator, the advantage for limiting graphene radiation material light high heat conducting in this way plays (such as Fig. 1 (a)).And heat can be transmitted on graphene radiator to (such as Fig. 1 (b)) well through the invention, it can be very good to send out The advantage for waving this high starch breeding alkene cooling fin, expands the application range of high starch breeding alkenyl heat sink material significantly, is It substitutes the metal temperature-uniforming plate that existing density is big and the capacity of heat transmission is poor and lays a good foundation.
4, for the material of anisotropic heat conductivity, the present invention, which can be used as, a kind of to be improved it and integrates the logical of the capacity of heat transmission Use method.
Detailed description of the invention
Fig. 1 is the schematic diagram that the present invention improves the comprehensive capacity of heat transmission, the conduction process of (a) graphene-based composite substrate Schematic diagram, (b) conduction process schematic diagram of the invention;
Fig. 2 is the assembling schematic diagram of high starch breeding alkene and copper billet heat structure of the present invention;
Fig. 3 is the perspective view of the explosion of embodiment 1 high starch breeding alkene and copper billet heat structure;
Fig. 4 is 1 overall package schematic diagram of embodiment;
Fig. 5 is the whole perspective view of the explosion of embodiment 1;
In figure: the graphene-based composite substrate of 1-, 2- graphene sheet layer, 3- heat source, 4- hot-fluid, the thermally conductive copper billet of 5-, 6- Gao Ding The integral assembling structure fast to graphene substrate and copper, the graphene substrate after 7- punching, the radiator peace that the 8- present invention assembles Overall structure on pcb board, 9- screw, the radiator overall structure that the 10- present invention assembles, 11-PCB plate.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawing, and however, it is not limited to this, all to this Inventive technique scheme is modified or replaced equivalently, and without departing from the spirit and scope of the technical solution of the present invention, should all be covered Within the protection scope of the present invention.
Embodiment 1:
The preparation method that a kind of fine copper is embedded in the heat structure in graphene-based composite substrate is present embodiments provided, specifically Implementation steps are as follows:
1) selecting the high starch breeding alkenyl composite material with a thickness of 4.5mm, the composite material is graphene as heat-radiating substrate With the composite material of a small amount of silver composition, wherein the volume fraction of silver is 5%, graphene is in inside along the face XY oriented alignment.The stone The length and width of black alkene heat sink is 200mm and 165mm respectively.As shown in figure 3, using numerically-controlled machine tool in graphene board Between position process a through-hole, the cross section of through-hole is square, lateral section be it is trapezoidal, the upper surface in hole having a size of 40 × 40mm, lower surface is having a size of 20 × 20mm.The plane thermal conductivity of the high starch breeding alkene cooling fin is 1400 ~ 1500Wm-1K-1, Longitudinal thermal conductivity is 5 ~ 10 Wm-1K-1
2) preparation is respectively 39.8 × 39.8mm, 19.8 × 19.8mm having a size of top and bottom size;A height of 4.5mm's is thermally conductive Copper billet.Basic shape is first processed with the mode of wire cutting, then each surface is polished, and obtains fine copper block.
3) graphene substrate and copper billet welding.Using AgCuTi soldering paste copper billet body together with substrate in combination, it is put into graphite In mold, it is put into soldering oven later, the vacuum degree of soldering ovens is waited to reach 10-3Pa is started to warm up and is brazed.Brazing process is: 350 DEG C are warming up to 15 DEG C/min heating rate, keeps the temperature 10min;750 DEG C are continuously heating to 25 DEG C/min, keeps the temperature 20min; Then 840 DEG C of brazing temperature are warming up to 10 DEG C/min, keep the temperature 30min;Sample is taken out after being cooled to room temperature after soldering, Obtain the heat structure that copper is embedded in graphene-based composite substrate.
Metal aluminium fin and copper obtained above/graphene radiator structure are welded into radiator, as shown in Figure 5.Use spiral shell Nail will be in the radiator that be welded installation again pcb board.Wherein, copper billet is in the position directly above of heat source, and copper billet area is biggish Lower surface and heat source contact, overall structure and explosion assembling figure are as shown in Figure 4 and Figure 5.The heat production power of heat source is 250W.
The package assembly is on the heat source of 250W, and after temperature is stablized, the temperature of heat source is 74.4 DEG C.And it uses same Technique replaces high starch breeding alkene heat sink and copper billet composite structure in the present embodiment with entire fine copper plate, and what is obtained dissipates Hot device, under same experiment condition, the temperature of heat source is 79.6 DEG C, and temperature of the invention reduces by 5.2 DEG C;With simple highly directional stone Black alkene board group at radiator, heat source temperature is 95.5 DEG C, compare for, temperature of the invention reduces 11.1 DEG C, that is, radiates Effect improves 12% or so.And its weight is well below the radiator of pure metal.For electronic device, the every reduction of temperature 0.5 DEG C is all very big progress, so the present invention for the cooling of electronic device, is qualitative leap.
Embodiment 2:
The difference of the present embodiment and embodiment 1 is:
1, the graphene-based composite substrate chosen is the composite material of graphene and 5v% carbon nanotube, and the graphene is compound The plane thermal conductivity of material cooling fin is ~ 1300Wm-1K-1, longitudinal thermal conductivity is ~ 10 Wm-1K-1
2, the welding of step 3).The welding process of the present embodiment is: being warming up to 300 DEG C with 10 DEG C/min heating rate, protects Warm 30min;700 DEG C are continuously heating to 20 DEG C/min, keeps the temperature 30min;Then 860 DEG C are warming up to 5 DEG C/min, heat preservation 10min takes out sample after being cooled to room temperature after soldering, obtains the radiator structure that copper is embedded in graphene substrate.
The package assembly and other conditions and embodiment 1 of radiator are identical.
The radiator is placed on heat source, after temperature is stablized, the temperature of heat source is 74.8 DEG C.
Embodiment 3:
A kind of copper alloy inlaid is present embodiments provided in the preparation method of the heat structure in graphene-based composite substrate, tool Body implementation steps are as follows:
1) selecting the high starch breeding alkenyl composite material with a thickness of 4.5mm, the composite material is graphene as heat-radiating substrate The composite material formed with a small amount of copper, wherein the volume fraction of copper is 5%, and graphene is in inside along the face XY oriented alignment.The stone The length and width of black alkene heat sink is 200mm and 165mm respectively.As shown in figure 3, using numerically-controlled machine tool in graphene board Between position process a through-hole, the cross section of through-hole is square, lateral section be it is trapezoidal, the upper surface in hole having a size of 40 × 40mm, lower surface is having a size of 20 × 20mm.The plane thermal conductivity of the high starch breeding alkene cooling fin is ~ 1300Wm-1K-1, longitudinal Thermal conductivity is 5 ~ 10 Wm-1K-1
2) preparation is respectively 39.8 × 39.8mm, 19.8 × 19.8mm having a size of top and bottom size;A height of 4.5mm's is thermally conductive Copper alloy, the copper alloy are the Kufils containing 0.8% silver medal.Basic shape is first processed with the mode of wire cutting, then to every A surface is polished.
3) graphene substrate and copper billet welding.Using AgCuTi soldering paste copper billet body together with substrate in combination, it is put into graphite In mold, it is put into soldering oven later, the vacuum degree of soldering ovens is waited to reach 10-3Pa is started to warm up and is brazed.Brazing process is: 400 DEG C are warming up to 20 DEG C/min heating rate, keeps the temperature 10min;800 DEG C are continuously heating to 30 DEG C/min, keeps the temperature 10min; Then 850 DEG C of brazing temperature are warming up to 15 DEG C/min, keep the temperature 20min;Sample is taken out after being cooled to room temperature after soldering, Obtain the heat structure that copper is embedded in graphene-based composite substrate.
Radiator is formed using with the identical method of embodiment 1, carries out heat dissipation effect test, as a result: after temperature is stablized, The temperature of heat source is 73.6 DEG C.Radiator temperature than fine copper reduces by 6 DEG C.
By above embodiment it is found that even if the plane thermal conductivity of graphene cooling fin is up to ~ 1500Wm-1K-1, it is approximately 4 times of fine copper thermal conductivity or so;But since its longitudinal thermal conductivity is very low, the temperature on heat source cannot be transmitted to heat dissipation well On device, so its heat dissipation effect is well below fine copper.And the very good solution of the present invention problem, heat dissipation effect improve 12% Left and right.And weight of the invention is small, greatly expands high starch breeding alkene material in the application of field of radiating, so of the invention It is prominent as heat sink material advantage.

Claims (10)

1. a kind of copper is embedded in the heat structure in graphene-based composite substrate, it is characterised in that the heat structure includes graphite Alkenyl composite substrate and high heat-conducting copper block, in which:
The graphene-based composite substrate longitudinally punches, and the position in the hole is in graphene-based composite substrate and heat source Contact point on;
The high heat-conducting copper block is embedded in the hole of graphene-based composite substrate.
2. copper according to claim 1 is embedded in the heat structure in graphene-based composite substrate, it is characterised in that institute The height for stating hole is identical with the thickness of substrate;The size and number in hole are determined according to the size and number of heat source;Hole knockout is CNC processing.
3. copper according to claim 1 is embedded in the heat structure in graphene-based composite substrate, it is characterised in that institute Stating graphene-based composite material is by matrix of graphene and graphene is aligned in material internal along graphene sheet layer direction Three-dimensional material.
4. copper according to claim 1 is embedded in the heat structure in graphene-based composite substrate, it is characterised in that institute The height for stating high heat-conducting copper block is identical with the thickness of graphene-based composite substrate;High heat-conducting copper block and graphene-based multiple The shape in the hole on condensation material substrate is consistent;The quantity of high heat-conducting copper block and the quantity in hole are consistent.
5. copper according to claim 1 or 4 is embedded in the heat structure in graphene-based composite substrate, it is characterised in that The high heat-conducting copper block is fine copper or copper alloy.
6. copper according to claim 1 is embedded in the heat structure in graphene-based composite substrate, it is characterised in that institute Stating high heat-conducting copper block is polyhedron;Lateral section is rectangle or trapezoidal.
7. a kind of preparation method of heat structure described in claim 1-6 any claim, it is characterised in that the method step It is rapid as follows:
1) it is punched on graphene-based composite substrate;
2) high heat-conducting copper block is prepared;
3) the high heat-conducting copper block that step 2 obtains is embedded in the graphene-based composite substrate of step 1) with the mode of soldering On hole in, obtain the radiator structure of high thermal conductivity.
8. copper according to claim 7 is embedded in the preparation method of the heat structure in graphene-based composite substrate, It is characterized in that the processing method of the copper billet body takes the mode of first wire cutting re-polishing;Each surface of copper billet body there are 0.1 ~ The surplus of 0.3mm carries out surface polishing treatment.
9. copper according to claim 7 is embedded in the preparation method of the heat structure in graphene-based composite substrate, It is characterized in that the specific steps of the soldering are as follows: using AgCuTi soldering paste as solder, be coated in graphene-based composite material The hole surface of substrate, the copper billet body for then obtaining step 2 are put into graphite jig, are put into later together with substrate in combination Soldering oven waits the vacuum degree of soldering ovens to reach 10-3Pa is started to warm up and is brazed.
10. copper according to claim 9 is embedded in the preparation method of the heat structure in graphene-based composite substrate, It is characterized in that the soldering temperature-rise period are as follows: be warming up to 300 ~ 400 DEG C with 10 ~ 20 DEG C/min heating rate, keep the temperature 10 ~ 30min; 700 ~ 800 DEG C are continuously heating to 20 ~ 30 DEG C/min, keeps the temperature 10 ~ 30min;Then brazing temperature is warming up to 5 ~ 15 DEG C/min 840 ~ 860 DEG C, keep the temperature 10 ~ 30min;Sample is taken out after being cooled to room temperature after soldering.
CN201810770815.6A 2018-07-13 2018-07-13 A kind of copper is embedded in the heat structure and preparation method thereof in graphene-based composite substrate Pending CN109037174A (en)

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Cited By (6)

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Publication number Priority date Publication date Assignee Title
CN109920904A (en) * 2019-04-10 2019-06-21 黄山学院 The radiator structure and processing technology of high-power GaN-based LED
CN112339359A (en) * 2020-09-23 2021-02-09 中国电子科技集团公司第二十九研究所 Aluminum-graphite aluminum composite material structure for enhancing longitudinal heat conductivity coefficient
CN113628975A (en) * 2020-05-07 2021-11-09 哈尔滨工业大学(威海) High-thermal-conductivity complex and preparation method thereof
CN114750490A (en) * 2022-04-28 2022-07-15 安徽碳华新材料科技有限公司 Alkene-carbon composite material with efficient heat dissipation capacity
CN115448297A (en) * 2022-08-26 2022-12-09 广东墨睿科技有限公司 Method for enhancing longitudinal heat-conducting property of graphene heat-conducting film, graphene heat-conducting film and application of graphene heat-conducting film
CN116442597A (en) * 2023-03-15 2023-07-18 常州富烯科技股份有限公司 Graphene composite material and preparation method thereof

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CN1622346A (en) * 2003-11-25 2005-06-01 诠兴开发科技股份有限公司 High thermal conductivity PCB type surface binding light emitting diode
CN103547441A (en) * 2011-03-16 2014-01-29 莫门蒂夫性能材料股份有限公司 High thermal conductivity/low coefficient of thermal expansion composites

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Publication number Priority date Publication date Assignee Title
CN1622346A (en) * 2003-11-25 2005-06-01 诠兴开发科技股份有限公司 High thermal conductivity PCB type surface binding light emitting diode
CN103547441A (en) * 2011-03-16 2014-01-29 莫门蒂夫性能材料股份有限公司 High thermal conductivity/low coefficient of thermal expansion composites

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109920904A (en) * 2019-04-10 2019-06-21 黄山学院 The radiator structure and processing technology of high-power GaN-based LED
CN109920904B (en) * 2019-04-10 2023-11-10 黄山学院 Heat radiation structure of high-power GaN-based LED and processing technology
CN113628975A (en) * 2020-05-07 2021-11-09 哈尔滨工业大学(威海) High-thermal-conductivity complex and preparation method thereof
CN112339359A (en) * 2020-09-23 2021-02-09 中国电子科技集团公司第二十九研究所 Aluminum-graphite aluminum composite material structure for enhancing longitudinal heat conductivity coefficient
CN114750490A (en) * 2022-04-28 2022-07-15 安徽碳华新材料科技有限公司 Alkene-carbon composite material with efficient heat dissipation capacity
CN114750490B (en) * 2022-04-28 2023-10-20 安徽碳华新材料科技有限公司 High-efficiency heat dissipation capacity olefinic carbon composite material
CN115448297A (en) * 2022-08-26 2022-12-09 广东墨睿科技有限公司 Method for enhancing longitudinal heat-conducting property of graphene heat-conducting film, graphene heat-conducting film and application of graphene heat-conducting film
CN116442597A (en) * 2023-03-15 2023-07-18 常州富烯科技股份有限公司 Graphene composite material and preparation method thereof

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Application publication date: 20181218