CN109037174A - A kind of copper is embedded in the heat structure and preparation method thereof in graphene-based composite substrate - Google Patents
A kind of copper is embedded in the heat structure and preparation method thereof in graphene-based composite substrate Download PDFInfo
- Publication number
- CN109037174A CN109037174A CN201810770815.6A CN201810770815A CN109037174A CN 109037174 A CN109037174 A CN 109037174A CN 201810770815 A CN201810770815 A CN 201810770815A CN 109037174 A CN109037174 A CN 109037174A
- Authority
- CN
- China
- Prior art keywords
- graphene
- heat
- based composite
- composite substrate
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The heat structure and preparation method thereof being embedded in the invention discloses a kind of copper in graphene-based composite substrate, the heat structure includes graphene-based composite substrate and high heat-conducting copper block, wherein: the graphene-based composite substrate longitudinally punches, and the high heat-conducting copper block is embedded in the hole of graphene-based composite substrate.The method comprises the following steps: 1) punched on graphene-based composite substrate;2) high heat-conducting copper block is prepared;3) the high heat-conducting copper block that step 2 obtains is embedded in the hole on the graphene-based composite substrate of step 1) with the mode of soldering, obtains the radiator structure of high thermal conductivity.Heat structure structure of the invention is simple, longitudinal high thermal conductivity block can be very good to conduct the heat of heat source along the face outside direction of high starch breeding alkene material, in conjunction with heating conduction in the excellent face of highly directional material, heat can quickly be spread, solve the problems, such as that longitudinal capacity of heat transmission is poor.
Description
Technical field
The invention belongs to design on material structure technical field, it is related to a kind of copper and is embedded in graphene-based composite substrate
Heat structure and preparation method thereof.
Background technique
21 century LED and related industry all obtain significant progress all over the world, arrive the year two thousand twenty, global LED according to investigations
Market scale is up to 150,000,000,000 dollars or so.LED have it is small in size, power consumption is low, luminous efficiency is high, long service life and
The advantages such as environmentally protective, therefore also obtain the support energetically of the Chinese government.LED industry starts to walk in China's the 1970s, passes through
Recent decades rapid development, market scale constantly expand.Institute's survey data is shown according to the study, and Chinese LED industry is always advised within 2015
Mould reaches 396,700,000,000 yuan, increases by 15.1% on a year-on-year basis.But as electronics and IT products are constantly miniaturized and the development of electronic technology,
LED electronic product constantly puts forward higher requirements the performances such as its chip electronic high speed, high frequency operation, however inside chip electronics
Element constantly generates heat under high load capacity working condition, and the heat of generation cannot scatter and disappear away in time will lead to LED chip knot
Point temperature constantly increases, to seriously affect the service life of product, it is also possible to lead to light decay.According to valid data
Show when LED temperature is increased to 100 DEG C by 25 DEG C of room temperature, it will lead to light output efficiency decaying 50%, reduced service life
60% or so.Therefore, heat dissipation problem is at the important bottleneck for restricting the development of LED electronic product.Therefore, grinding for heat sink material
Study carefully the concern for increasingly causing scientist, there are density for traditional heat sink material-metal, artificial graphite, heat pipe etc. greatly, thermal conductivity
The low, disadvantages such as heat emissivity coefficient is low, are no longer satisfied requirement of the electronic product to heat sink material and radiator structure.
Graphene is two dimensional crystal material, and there is thermal conductivity in the single-layer graphene face of perfect lattice to be up to ~ 5300W/
(mK), rare opportunity is provided to the development of heat sink material of new generation.How to utilize the thermal property of graphene becomes section
The emphasis that scholars grind.One of strategy is exactly that graphene is assembled into macroscopic material, gives full play to graphene and receives and sees scale
Thermal property, realize from receive see scale to macro-scale leap.
Graphene itself is the material of high anisotropy, and thermal conductivity is less than 10W/(mK outside face), it prepares at present
Graphene-based heat sink material is substantially the material of graphene oriented alignment, because only that it is excellent just to give full play to graphene in this way
Heating conduction in different face.However, this oriented alignment structure simultaneously results in graphene-based heat sink material along perpendicular to graphite
The direction thermal conductivity of alkene layer is very low, the heating conduction of this high anisotropy, limits heat in the conduction of three-dimensional,
And then the advantage of thermal conductivity in the high face of this kind of material can not be played.
Summary of the invention
In order to solve the problems, such as above-mentioned graphene-based heat sink material longitudinal direction capacity of heat transmission lower limit, it integrates the capacity of heat transmission, this
Invention provides the heat structure and preparation method thereof that a kind of copper is embedded in graphene-based composite substrate.
The purpose of the present invention is what is be achieved through the following technical solutions:
A kind of copper is embedded in the heat structure in graphene-based composite substrate, including graphene-based composite substrate and height are led
Hot copper billet body, in which:
The graphene-based composite substrate longitudinally punches, and the position in the hole is in graphene-based composite substrate and heat source
Contact point on;
The high heat-conducting copper block is embedded in the hole of graphene-based composite substrate.
In the present invention, the height in the hole and the thickness of substrate are identical;The size and number in hole according to the size of heat source and
Quantity determines that the quantity in hole can be one, be also possible to multiple;Hole knockout is CNC processing.
In the present invention, the graphene-based composite material be by matrix of graphene and graphene in material internal along graphite
The three-dimensional material that alkene lamella direction (X/Y plane) aligns.
In the present invention, the height of the high heat-conducting copper block is identical with the thickness of graphene-based composite substrate.
In the present invention, the high heat-conducting copper block can be fine copper, be also possible to the copper alloy of high thermal conductivity.
In the present invention, the shape in the high heat-conducting copper block and the hole on graphene-based composite substrate is consistent,
It can be cuboid, be also possible to the polyhedron of other arbitrary shapes;Lateral section can be rectangle, be also possible to trapezoidal.
In the present invention, the quantity of the high heat-conducting copper block is consistent with the quantity in hole.
A kind of preparation method of above-mentioned heat structure, includes the following steps:
1) it is punched on graphene-based composite substrate;
2) high heat-conducting copper block is prepared, in which: the processing method of the copper billet body takes the mode of first wire cutting re-polishing;Copper billet
There are the surpluses of 0.1 ~ 0.3mm on each surface of body, carry out surface polishing treatment;
3) the high heat-conducting copper block that step 2 obtains is embedded in the graphene-based composite substrate of step 1) with the mode of soldering
On hole in, obtain the radiator structure of high thermal conductivity, in which:
The specific steps of the soldering are as follows: using AgCuTi soldering paste as solder, be coated in graphene-based composite substrate
Hole surface, the copper billet body for then obtaining step 2 is put into graphite jig together with substrate in combination, is put into soldering later
Furnace waits the vacuum degree of soldering ovens to reach 10-3Pa is started to warm up and is brazed;
The soldering temperature-rise period are as follows: be warming up to 300 ~ 400 DEG C with 10 ~ 20 DEG C/min heating rate, keep the temperature 10 ~ 30min;With 20
~ 30 DEG C/min is continuously heating to 700 ~ 800 DEG C, keeps the temperature 10 ~ 30min;Then with 5 ~ 15 DEG C/min be warming up to brazing temperature 840 ~
860 DEG C, keep the temperature 10 ~ 30min;Sample is taken out after being cooled to room temperature after soldering.
Above-mentioned steps 1), step 2 there is no sequencing.
The invention has the following beneficial effects:
1, heat structure application range of the invention is wider, can carry out assembling use with other heat sink materials and structure, such as: and dissipate
Hot fin combines, and is assembled into radiator use;Also it can be used alone, such as: being used as soaking plate;Can also be used as heat source and
The connection structure of auxiliary radiating device;There are different geometry and size requirement in different applications, can use machine
Tool processes the radiator structure different with Combination Design.
2, heat structure structure of the invention is simple, and longitudinal high thermal conductivity block can be very good the heat by heat source along highly directional
The face outside direction of grapheme material is conducted, and in conjunction with heating conduction in the excellent face of highly directional material, heat can quickly be expanded
It dissipates, solves the problems, such as that longitudinal capacity of heat transmission is poor.
3, because of thermal conductivity height (up to ~ 1500Wm in the face of graphene radiation material-1K-1) and density it is very low (1.5 ~
2.0g/cm3), this has absolute advantage in terms of heat sink material.But its longitudinal thermal conductivity is low, so that heat is difficult from heat source
It is transferred on graphene radiator, the advantage for limiting graphene radiation material light high heat conducting in this way plays (such as Fig. 1
(a)).And heat can be transmitted on graphene radiator to (such as Fig. 1 (b)) well through the invention, it can be very good to send out
The advantage for waving this high starch breeding alkene cooling fin, expands the application range of high starch breeding alkenyl heat sink material significantly, is
It substitutes the metal temperature-uniforming plate that existing density is big and the capacity of heat transmission is poor and lays a good foundation.
4, for the material of anisotropic heat conductivity, the present invention, which can be used as, a kind of to be improved it and integrates the logical of the capacity of heat transmission
Use method.
Detailed description of the invention
Fig. 1 is the schematic diagram that the present invention improves the comprehensive capacity of heat transmission, the conduction process of (a) graphene-based composite substrate
Schematic diagram, (b) conduction process schematic diagram of the invention;
Fig. 2 is the assembling schematic diagram of high starch breeding alkene and copper billet heat structure of the present invention;
Fig. 3 is the perspective view of the explosion of embodiment 1 high starch breeding alkene and copper billet heat structure;
Fig. 4 is 1 overall package schematic diagram of embodiment;
Fig. 5 is the whole perspective view of the explosion of embodiment 1;
In figure: the graphene-based composite substrate of 1-, 2- graphene sheet layer, 3- heat source, 4- hot-fluid, the thermally conductive copper billet of 5-, 6- Gao Ding
The integral assembling structure fast to graphene substrate and copper, the graphene substrate after 7- punching, the radiator peace that the 8- present invention assembles
Overall structure on pcb board, 9- screw, the radiator overall structure that the 10- present invention assembles, 11-PCB plate.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawing, and however, it is not limited to this, all to this
Inventive technique scheme is modified or replaced equivalently, and without departing from the spirit and scope of the technical solution of the present invention, should all be covered
Within the protection scope of the present invention.
Embodiment 1:
The preparation method that a kind of fine copper is embedded in the heat structure in graphene-based composite substrate is present embodiments provided, specifically
Implementation steps are as follows:
1) selecting the high starch breeding alkenyl composite material with a thickness of 4.5mm, the composite material is graphene as heat-radiating substrate
With the composite material of a small amount of silver composition, wherein the volume fraction of silver is 5%, graphene is in inside along the face XY oriented alignment.The stone
The length and width of black alkene heat sink is 200mm and 165mm respectively.As shown in figure 3, using numerically-controlled machine tool in graphene board
Between position process a through-hole, the cross section of through-hole is square, lateral section be it is trapezoidal, the upper surface in hole having a size of 40 ×
40mm, lower surface is having a size of 20 × 20mm.The plane thermal conductivity of the high starch breeding alkene cooling fin is 1400 ~ 1500Wm-1K-1,
Longitudinal thermal conductivity is 5 ~ 10 Wm-1K-1。
2) preparation is respectively 39.8 × 39.8mm, 19.8 × 19.8mm having a size of top and bottom size;A height of 4.5mm's is thermally conductive
Copper billet.Basic shape is first processed with the mode of wire cutting, then each surface is polished, and obtains fine copper block.
3) graphene substrate and copper billet welding.Using AgCuTi soldering paste copper billet body together with substrate in combination, it is put into graphite
In mold, it is put into soldering oven later, the vacuum degree of soldering ovens is waited to reach 10-3Pa is started to warm up and is brazed.Brazing process is:
350 DEG C are warming up to 15 DEG C/min heating rate, keeps the temperature 10min;750 DEG C are continuously heating to 25 DEG C/min, keeps the temperature 20min;
Then 840 DEG C of brazing temperature are warming up to 10 DEG C/min, keep the temperature 30min;Sample is taken out after being cooled to room temperature after soldering,
Obtain the heat structure that copper is embedded in graphene-based composite substrate.
Metal aluminium fin and copper obtained above/graphene radiator structure are welded into radiator, as shown in Figure 5.Use spiral shell
Nail will be in the radiator that be welded installation again pcb board.Wherein, copper billet is in the position directly above of heat source, and copper billet area is biggish
Lower surface and heat source contact, overall structure and explosion assembling figure are as shown in Figure 4 and Figure 5.The heat production power of heat source is 250W.
The package assembly is on the heat source of 250W, and after temperature is stablized, the temperature of heat source is 74.4 DEG C.And it uses same
Technique replaces high starch breeding alkene heat sink and copper billet composite structure in the present embodiment with entire fine copper plate, and what is obtained dissipates
Hot device, under same experiment condition, the temperature of heat source is 79.6 DEG C, and temperature of the invention reduces by 5.2 DEG C;With simple highly directional stone
Black alkene board group at radiator, heat source temperature is 95.5 DEG C, compare for, temperature of the invention reduces 11.1 DEG C, that is, radiates
Effect improves 12% or so.And its weight is well below the radiator of pure metal.For electronic device, the every reduction of temperature
0.5 DEG C is all very big progress, so the present invention for the cooling of electronic device, is qualitative leap.
Embodiment 2:
The difference of the present embodiment and embodiment 1 is:
1, the graphene-based composite substrate chosen is the composite material of graphene and 5v% carbon nanotube, and the graphene is compound
The plane thermal conductivity of material cooling fin is ~ 1300Wm-1K-1, longitudinal thermal conductivity is ~ 10 Wm-1K-1。
2, the welding of step 3).The welding process of the present embodiment is: being warming up to 300 DEG C with 10 DEG C/min heating rate, protects
Warm 30min;700 DEG C are continuously heating to 20 DEG C/min, keeps the temperature 30min;Then 860 DEG C are warming up to 5 DEG C/min, heat preservation
10min takes out sample after being cooled to room temperature after soldering, obtains the radiator structure that copper is embedded in graphene substrate.
The package assembly and other conditions and embodiment 1 of radiator are identical.
The radiator is placed on heat source, after temperature is stablized, the temperature of heat source is 74.8 DEG C.
Embodiment 3:
A kind of copper alloy inlaid is present embodiments provided in the preparation method of the heat structure in graphene-based composite substrate, tool
Body implementation steps are as follows:
1) selecting the high starch breeding alkenyl composite material with a thickness of 4.5mm, the composite material is graphene as heat-radiating substrate
The composite material formed with a small amount of copper, wherein the volume fraction of copper is 5%, and graphene is in inside along the face XY oriented alignment.The stone
The length and width of black alkene heat sink is 200mm and 165mm respectively.As shown in figure 3, using numerically-controlled machine tool in graphene board
Between position process a through-hole, the cross section of through-hole is square, lateral section be it is trapezoidal, the upper surface in hole having a size of 40 ×
40mm, lower surface is having a size of 20 × 20mm.The plane thermal conductivity of the high starch breeding alkene cooling fin is ~ 1300Wm-1K-1, longitudinal
Thermal conductivity is 5 ~ 10 Wm-1K-1。
2) preparation is respectively 39.8 × 39.8mm, 19.8 × 19.8mm having a size of top and bottom size;A height of 4.5mm's is thermally conductive
Copper alloy, the copper alloy are the Kufils containing 0.8% silver medal.Basic shape is first processed with the mode of wire cutting, then to every
A surface is polished.
3) graphene substrate and copper billet welding.Using AgCuTi soldering paste copper billet body together with substrate in combination, it is put into graphite
In mold, it is put into soldering oven later, the vacuum degree of soldering ovens is waited to reach 10-3Pa is started to warm up and is brazed.Brazing process is:
400 DEG C are warming up to 20 DEG C/min heating rate, keeps the temperature 10min;800 DEG C are continuously heating to 30 DEG C/min, keeps the temperature 10min;
Then 850 DEG C of brazing temperature are warming up to 15 DEG C/min, keep the temperature 20min;Sample is taken out after being cooled to room temperature after soldering,
Obtain the heat structure that copper is embedded in graphene-based composite substrate.
Radiator is formed using with the identical method of embodiment 1, carries out heat dissipation effect test, as a result: after temperature is stablized,
The temperature of heat source is 73.6 DEG C.Radiator temperature than fine copper reduces by 6 DEG C.
By above embodiment it is found that even if the plane thermal conductivity of graphene cooling fin is up to ~ 1500Wm-1K-1, it is approximately
4 times of fine copper thermal conductivity or so;But since its longitudinal thermal conductivity is very low, the temperature on heat source cannot be transmitted to heat dissipation well
On device, so its heat dissipation effect is well below fine copper.And the very good solution of the present invention problem, heat dissipation effect improve 12%
Left and right.And weight of the invention is small, greatly expands high starch breeding alkene material in the application of field of radiating, so of the invention
It is prominent as heat sink material advantage.
Claims (10)
1. a kind of copper is embedded in the heat structure in graphene-based composite substrate, it is characterised in that the heat structure includes graphite
Alkenyl composite substrate and high heat-conducting copper block, in which:
The graphene-based composite substrate longitudinally punches, and the position in the hole is in graphene-based composite substrate and heat source
Contact point on;
The high heat-conducting copper block is embedded in the hole of graphene-based composite substrate.
2. copper according to claim 1 is embedded in the heat structure in graphene-based composite substrate, it is characterised in that institute
The height for stating hole is identical with the thickness of substrate;The size and number in hole are determined according to the size and number of heat source;Hole knockout is
CNC processing.
3. copper according to claim 1 is embedded in the heat structure in graphene-based composite substrate, it is characterised in that institute
Stating graphene-based composite material is by matrix of graphene and graphene is aligned in material internal along graphene sheet layer direction
Three-dimensional material.
4. copper according to claim 1 is embedded in the heat structure in graphene-based composite substrate, it is characterised in that institute
The height for stating high heat-conducting copper block is identical with the thickness of graphene-based composite substrate;High heat-conducting copper block and graphene-based multiple
The shape in the hole on condensation material substrate is consistent;The quantity of high heat-conducting copper block and the quantity in hole are consistent.
5. copper according to claim 1 or 4 is embedded in the heat structure in graphene-based composite substrate, it is characterised in that
The high heat-conducting copper block is fine copper or copper alloy.
6. copper according to claim 1 is embedded in the heat structure in graphene-based composite substrate, it is characterised in that institute
Stating high heat-conducting copper block is polyhedron;Lateral section is rectangle or trapezoidal.
7. a kind of preparation method of heat structure described in claim 1-6 any claim, it is characterised in that the method step
It is rapid as follows:
1) it is punched on graphene-based composite substrate;
2) high heat-conducting copper block is prepared;
3) the high heat-conducting copper block that step 2 obtains is embedded in the graphene-based composite substrate of step 1) with the mode of soldering
On hole in, obtain the radiator structure of high thermal conductivity.
8. copper according to claim 7 is embedded in the preparation method of the heat structure in graphene-based composite substrate,
It is characterized in that the processing method of the copper billet body takes the mode of first wire cutting re-polishing;Each surface of copper billet body there are 0.1 ~
The surplus of 0.3mm carries out surface polishing treatment.
9. copper according to claim 7 is embedded in the preparation method of the heat structure in graphene-based composite substrate,
It is characterized in that the specific steps of the soldering are as follows: using AgCuTi soldering paste as solder, be coated in graphene-based composite material
The hole surface of substrate, the copper billet body for then obtaining step 2 are put into graphite jig, are put into later together with substrate in combination
Soldering oven waits the vacuum degree of soldering ovens to reach 10-3Pa is started to warm up and is brazed.
10. copper according to claim 9 is embedded in the preparation method of the heat structure in graphene-based composite substrate,
It is characterized in that the soldering temperature-rise period are as follows: be warming up to 300 ~ 400 DEG C with 10 ~ 20 DEG C/min heating rate, keep the temperature 10 ~ 30min;
700 ~ 800 DEG C are continuously heating to 20 ~ 30 DEG C/min, keeps the temperature 10 ~ 30min;Then brazing temperature is warming up to 5 ~ 15 DEG C/min
840 ~ 860 DEG C, keep the temperature 10 ~ 30min;Sample is taken out after being cooled to room temperature after soldering.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810770815.6A CN109037174A (en) | 2018-07-13 | 2018-07-13 | A kind of copper is embedded in the heat structure and preparation method thereof in graphene-based composite substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810770815.6A CN109037174A (en) | 2018-07-13 | 2018-07-13 | A kind of copper is embedded in the heat structure and preparation method thereof in graphene-based composite substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109037174A true CN109037174A (en) | 2018-12-18 |
Family
ID=64642236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810770815.6A Pending CN109037174A (en) | 2018-07-13 | 2018-07-13 | A kind of copper is embedded in the heat structure and preparation method thereof in graphene-based composite substrate |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109037174A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109920904A (en) * | 2019-04-10 | 2019-06-21 | 黄山学院 | The radiator structure and processing technology of high-power GaN-based LED |
CN112339359A (en) * | 2020-09-23 | 2021-02-09 | 中国电子科技集团公司第二十九研究所 | Aluminum-graphite aluminum composite material structure for enhancing longitudinal heat conductivity coefficient |
CN113628975A (en) * | 2020-05-07 | 2021-11-09 | 哈尔滨工业大学(威海) | High-thermal-conductivity complex and preparation method thereof |
CN114750490A (en) * | 2022-04-28 | 2022-07-15 | 安徽碳华新材料科技有限公司 | Alkene-carbon composite material with efficient heat dissipation capacity |
CN115448297A (en) * | 2022-08-26 | 2022-12-09 | 广东墨睿科技有限公司 | Method for enhancing longitudinal heat-conducting property of graphene heat-conducting film, graphene heat-conducting film and application of graphene heat-conducting film |
CN116442597A (en) * | 2023-03-15 | 2023-07-18 | 常州富烯科技股份有限公司 | Graphene composite material and preparation method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1622346A (en) * | 2003-11-25 | 2005-06-01 | 诠兴开发科技股份有限公司 | High thermal conductivity PCB type surface binding light emitting diode |
CN103547441A (en) * | 2011-03-16 | 2014-01-29 | 莫门蒂夫性能材料股份有限公司 | High thermal conductivity/low coefficient of thermal expansion composites |
-
2018
- 2018-07-13 CN CN201810770815.6A patent/CN109037174A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1622346A (en) * | 2003-11-25 | 2005-06-01 | 诠兴开发科技股份有限公司 | High thermal conductivity PCB type surface binding light emitting diode |
CN103547441A (en) * | 2011-03-16 | 2014-01-29 | 莫门蒂夫性能材料股份有限公司 | High thermal conductivity/low coefficient of thermal expansion composites |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109920904A (en) * | 2019-04-10 | 2019-06-21 | 黄山学院 | The radiator structure and processing technology of high-power GaN-based LED |
CN109920904B (en) * | 2019-04-10 | 2023-11-10 | 黄山学院 | Heat radiation structure of high-power GaN-based LED and processing technology |
CN113628975A (en) * | 2020-05-07 | 2021-11-09 | 哈尔滨工业大学(威海) | High-thermal-conductivity complex and preparation method thereof |
CN112339359A (en) * | 2020-09-23 | 2021-02-09 | 中国电子科技集团公司第二十九研究所 | Aluminum-graphite aluminum composite material structure for enhancing longitudinal heat conductivity coefficient |
CN114750490A (en) * | 2022-04-28 | 2022-07-15 | 安徽碳华新材料科技有限公司 | Alkene-carbon composite material with efficient heat dissipation capacity |
CN114750490B (en) * | 2022-04-28 | 2023-10-20 | 安徽碳华新材料科技有限公司 | High-efficiency heat dissipation capacity olefinic carbon composite material |
CN115448297A (en) * | 2022-08-26 | 2022-12-09 | 广东墨睿科技有限公司 | Method for enhancing longitudinal heat-conducting property of graphene heat-conducting film, graphene heat-conducting film and application of graphene heat-conducting film |
CN116442597A (en) * | 2023-03-15 | 2023-07-18 | 常州富烯科技股份有限公司 | Graphene composite material and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109037174A (en) | A kind of copper is embedded in the heat structure and preparation method thereof in graphene-based composite substrate | |
CN106802100A (en) | A kind of soaking plate and its manufacture, application method | |
CN101458049A (en) | Composite graphite heat conducting radiation fins | |
CN108925108A (en) | The conductive structure and its manufacturing method of aluminium alloy are inlayed in a kind of graphene-based composite substrate | |
CN201352082Y (en) | Composite graphite heat conducting and radiating sheet | |
CN105859291B (en) | The preparation method of three-dimensional highly-conductive hot carbon based composites | |
CN104717875B (en) | Method for manufacturing heat radiation assembly | |
CN201609005U (en) | Fin-shaped phase-change electronic radiator | |
CN102404976A (en) | Electronic device | |
US7491421B2 (en) | Graphite base for heat sink, method of making graphite base and heat sink | |
CN202276480U (en) | Aluminum plate type fast radiating electric heater | |
CN102368482B (en) | High-efficiency heat sink of porous metal structure | |
CN105066077B (en) | Heat-transfer device | |
CN102555311B (en) | Interactive fin structure type high heat dissipation membrane and manufacturing method thereof | |
JP2013064224A (en) | Method for producing heat-releasing sheet | |
CN109640581A (en) | A kind of air cold plate and its processing method of embedded heat pipes | |
CN206196216U (en) | Heat radiator for compound thermal pad piece and communication equipment | |
CN201438801U (en) | Structure of forming and radiating module of composite metal | |
CN207352551U (en) | The computer radiator of high-cooling property | |
CN209527039U (en) | It is a kind of using air-cooled heat pipe cold plate | |
CN202629991U (en) | Heat radiation component of LED lamp | |
CN204005868U (en) | LED radiator | |
CN204706553U (en) | A kind of non-homogeneous microchannel heat radiating fin structure | |
CN105899043A (en) | Heat dissipation device with electromagnetic shielding function | |
CN206300174U (en) | Radiator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181218 |