CN109029358A - Liquid metal grid-control friction electron-optical transistor, electrolevel - Google Patents
Liquid metal grid-control friction electron-optical transistor, electrolevel Download PDFInfo
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- CN109029358A CN109029358A CN201810679333.XA CN201810679333A CN109029358A CN 109029358 A CN109029358 A CN 109029358A CN 201810679333 A CN201810679333 A CN 201810679333A CN 109029358 A CN109029358 A CN 109029358A
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- liquid metal
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C9/00—Measuring inclination, e.g. by clinometers, by levels
- G01C9/18—Measuring inclination, e.g. by clinometers, by levels by using liquids
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/04—Friction generators
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C9/00—Measuring inclination, e.g. by clinometers, by levels
- G01C9/18—Measuring inclination, e.g. by clinometers, by levels by using liquids
- G01C2009/182—Measuring inclination, e.g. by clinometers, by levels by using liquids conductive
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- General Physics & Mathematics (AREA)
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Abstract
The present invention provides a kind of electrolevels based on liquid metal, for angle measurement, it include: the first field effect transistor, the second field effect transistor, friction nanometer power generator, second field effect transistor and the first field effect transistor are arranged side by side, and friction nanometer power generator is located at the top of the first, second field effect transistor；Wherein, friction nanometer power generator includes frictional layer and liquid metal, and frictional layer is cavity structure, and liquid metal position is in the cavity.Electrolevel of the invention has the characteristics that high sensitivity, detection range is big, stability is good, will be with important application prospects in fields such as machine-building, civil engineering and geological prospectings.
Description
Technical field
The present invention relates to liquid metal and technical field of electronic devices more particularly to a kind of liquid metal grid-control friction electronics
Learn transistor and the electrolevel based on liquid metal.
Background technique
In recent years, it since low melting point liquid metal has excellent rheological behavior at room temperature, is allowed to numerous important
Field has attracted extensive concern.Wherein, researchers, which are especially desirable, is applied to electronic device for liquid metal, to play its height
The characteristics of conductivity, good interfacial contact and mobility.In the past ten years, researchers propose some based on application
The electronic device of liquid metal includes: printing electronic device, lithium ion battery and thermoelectric cell etc..However, these devices are being tied
Inherent shortcoming on structure causes the superior physical and chemical performance of liquid metal that cannot access preferable performance.Therefore, pass through one
It is necessary that the novel structure design of kind, which enables liquid metal to be preferably applied for electronic device,.
Summary of the invention
(1) technical problems to be solved
In view of above-mentioned technical problem, the purpose of the present invention is to provide a kind of liquid metal grid-control friction electron-optical transistors
And the electrolevel based on liquid metal, and show the characteristic of its deflection angle measurement.
Since 2012, friction nanometer power generator provides one kind as a kind of emerging science and technology can be effectively by ring
The method that border mechanical energy is converted to electric energy.In recent years, electrical effect and semiconductor are played by Coupled Friction, researchers have also been proposed
Rub this new research field of electronics.Wherein the main research of information friction electronics is to be regulated and controled using friction electricity
Electronic transport in semiconductor, for information sensing and active control.These friction electronics devices have been applied to
Field effect transistor, Organic Light Emitting Diode, logic circuit, memory, phototransistor and tactile sensing array etc..Based on material
Expect the diversity of selection, the electronics that rubs provides a kind of potential scheme for the application of liquid metal on the electronic devices.
Liquid metal is introduced friction electronics device by the present invention, and it is brilliant to propose a kind of liquid metal grid-control friction electronics
Body pipe, by coupling metal-oxide semiconductor fieldeffect transistor and based on the friction nanometer power generator of liquid metal, device
Carrier transport in part can be regulated and controled by swinging caused electrostatic potential, and unconventional Applied gate voltages.Furthermore base
It rubs electron-optical transistor in liquid metal grid-control, the present invention, which has also been proposed, a kind of can be used for angle measurement based on liquid metal
Electrolevel, the electrolevel has the characteristics that high sensitivity, range is big for detection, stability is good, this will be in machinery
The fields such as manufacture, civil engineering and geological prospecting are with important application prospects.
(2) technical solution
To achieve the goals above, the technical solution adopted in the present invention is as follows:
According to an aspect of the invention, there is provided a kind of electrolevel based on liquid metal, is used for angle measurement,
Include:
First field effect transistor；
Second field effect transistor is arranged side by side with the first field effect transistor；
Friction nanometer power generator, positioned at the top of the first, second field effect transistor；Wherein,
Friction nanometer power generator includes frictional layer and liquid metal, and frictional layer is cavity structure, and liquid metal is located at described
In cavity.
In certain embodiments of the present invention, the drain electrode of the first field effect transistor and the source electrode of the second field effect transistor
Connection, as voltage input port；The source electrode of first field effect transistor is grounded；The drain electrode of second field effect transistor is as electricity
Press output port.
In certain embodiments of the present invention, the cavity structure includes bottom surface and side, liquid metal be located at bottom surface and
In the space that side is surrounded.
In certain embodiments of the present invention, the friction nanometer power generator further include:
Sealing cover, positioned at the top of frictional layer.
In certain embodiments of the present invention, the liquid metal is paved with the bottom surface of frictional layer, is no more than frictional layer side
Half.
In certain embodiments of the present invention, the liquid metal is the low-melting-point metal or alloy of liquid.
In certain embodiments of the present invention, the field effect transistor is n-channel backgate type field effect transistor, packet
It includes:
Grid, positioned at the lower section of the frictional layer of friction nanometer power generator；
Substrate, positioned at the lower section of grid；
Buried oxide layer, positioned at the lower section of substrate；
Channel layer, positioned at the lower section of buried oxide layer；
First heavily doped region and the second heavily doped region are located at channel layer lower surface；
Drain electrode and source electrode, are located at the lower section of the first heavily doped region and the lower section of the second heavily doped region.
In certain embodiments of the present invention, the grid is metal, and the frictional layer is different to obtain electric energy power from metal
Thin-film material.
In certain embodiments of the present invention, the frictional layer is polytetrafluoroethylene (PTFE).
According to another aspect of the present invention, a kind of liquid metal grid-control friction electron-optical transistor is provided, comprising:
Field effect transistor；
Friction nanometer power generator, positioned at the top of field effect transistor；Wherein,
Friction nanometer power generator includes frictional layer and liquid metal, and frictional layer is cavity structure, and liquid metal is located at described
In cavity.
(3) beneficial effect
It can be seen from the above technical proposal that the present invention at least has the advantages that one of them:
(1) liquid metal is introduced friction electronics device by the present invention, does not need Applied gate voltages；
(2) electrolevel of the invention includes the friction nanometer power generator based on liquid metal, realizes the survey of angle
Amount has the characteristics that high sensitivity, detection range is big, stability is good.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of liquid metal of embodiment of the present invention grid-control friction electron-optical transistor.
Fig. 2 is the working principle diagram of liquid metal of embodiment of the present invention grid-control friction electron-optical transistor.
Fig. 3 is that the output characteristics that the grid-control of liquid metal of the embodiment of the present invention rubs under electron-optical transistor difference pivot angle is bent
Line.
Fig. 4 is that the transfer characteristic that the grid-control of liquid metal of the embodiment of the present invention rubs under electron-optical transistor difference pivot angle is bent
Line.
Fig. 5 is the structural schematic diagram of electrolevel of the embodiment of the present invention based on liquid metal.
Fig. 6 is the working principle diagram of electrolevel of the embodiment of the present invention based on liquid metal.
Fig. 7 be the embodiment of the present invention based on the electrolevel of liquid metal under different biass, output voltage is with pivot angle
Variation relation.
Fig. 8 be the embodiment of the present invention based on the electrolevel of liquid metal under different biass, sensitivity is with pivot angle
Variation relation.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
Before the electrolevel of the invention based on liquid metal is introduced, rub first to liquid metal grid-control
Electron-optical transistor is wiped to be described in detail.
In first exemplary embodiment of the invention, a kind of liquid metal grid-control friction electronics crystal is provided
Pipe.Fig. 1 is the structural schematic diagram of liquid metal of embodiment of the present invention grid-control friction electron-optical transistor.As shown in Figure 1, of the invention
Liquid metal grid-control friction electron-optical transistor includes field effect transistor and friction nanometer power generator, friction nanometer power generator position
In the top of field effect transistor；Wherein, friction nanometer power generator includes frictional layer and liquid metal, and frictional layer is cavity knot
Structure, liquid metal position is in the cavity.
In the present embodiment, field effect transistor is n-channel backgate type field effect transistor, and those skilled in the art should
Understand, the structure of field effect transistor is not limited thereto, and the field effect transistor of other structures is also applied for the present invention.
As shown in Figure 1, n-channel backgate type field effect transistor includes: grid 8, substrate 7, buried oxide layer 6, channel layer 3,
One heavily doped region 1 and the second heavily doped region 5, source electrode 2 and drain electrode 4.Grid 8 is located under the frictional layer 9 of friction nanometer power generator
Side；Substrate 7 is located at the lower section of grid 8；Buried oxide layer 6 is located at the lower section of substrate 7；Channel layer 3 is located at the lower section of buried oxide layer 6；First
Heavily doped region 1 and the second heavily doped region 5 are located at 3 lower surface of channel layer；Source electrode 2 and drain electrode 4 are located at the first heavily doped region 1
The lower section of lower section and the second heavily doped region 5.In the present embodiment, channel layer 3 and substrate 7 are p-type silicon, the first heavily doped region 1
It is p+ silicon with the second heavily doped region 5, source electrode 2 and drain electrode 4 are splash-proofing sputtering metal aluminium electrode, and buried oxide layer 6 is silica, grid
8 be splash-proofing sputtering metal aluminium electrode.
It is frictional layer 9 above grid 8, frictional layer 9, which should be, is about from the metal thin-film material that obtain electronic capability different, thickness
1-500 μm, the frictional layer 9 in this example is the polytetrafluoroethylene (PTFE) (PTFE) of 50 μ m-thicks, and is distributed in the bottom of liquid metal 10
Face and side.In the present embodiment, liquid metal 10 is low-melting-point metal, the alloy that liquid is presented at room temperature, such as: mercury and gallium indium
Alloy, wherein the content of liquid metal 10 is the PTFE frictional layer for being just paved with bottom surface, no more than side PTFE frictional layer
Half.
Sealing cover 11 is equipped with above frictional layer 9, it is glass material that sealing cover, which uses, in this example.Liquid metal 10 has
Good mobility, when device is swung, the flowing of liquid metal 10 can generate electrostatic potential by triboelectrification with frictional layer 9.
Fig. 2 is the working principle diagram of liquid metal of embodiment of the present invention grid-control friction electron-optical transistor.As shown in Fig. 2,
The working principle of liquid metal grid-control friction electron-optical transistor is based on field effect transistor and liquid metal friction nanometer hair
The coupling of motor can generate electrostatic potential by triboelectrification between liquid metal and dielectric layer, this quiet caused by swinging
Potential can substitute traditional grid voltage to regulate and control the carrier transport between device source electrode and drain electrode.Liquid metal 10 is delayed
In the slow chamber for being injected into the package of frictional layer 9, as shown in a in Fig. 2, during this, the flowing meeting of liquid metal 10 and rub
It wipes the friction of layer 9 and generates electrostatic potential.Since constraint ability of the frictional layer 9 to electronics is greater than liquid metal 10 to the binding energy of electronics
Power, so liquid metal 10 is positively charged, frictional layer 9 is negatively charged.After injection, liquid metal 10 and bottom are rubbed at this time
It wipes and generates electrostatic potential between layer 9, be equivalent to the grid 8 plus forward voltage of field effect transistor, lead to field effect transistor p-type
Cause interior charge polarization in channel, an internal electric field is established between channel layer 3 and buried oxide layer 6, makes the electronics in channel layer 3
The earth is flowed to through source electrode 2, as a result enhancement region is formed in channel layer 3, so that the size of drain current is increased, such as the b in Fig. 2
It is shown.When device swings to maximum negative angle, as shown in the c in Fig. 2, liquid metal 10 and 9 contact area of frictional layer are reduced,
Reach state of electrostatic equilibrium, channel layer 3 is not influenced.Until device opposite direction swing to again restore horizontality when
It waits, as shown in the d in Fig. 2, transistor gate forward voltage reaches maximum value again, and drain current increases.When device is to another
When side tilts, to during maximum positive, as shown in the e in Fig. 2, liquid metal 10 and 9 contact area of frictional layer are reduced, crystal
Tube grid forward voltage reduces, and transistor built in field is decreased to 0, electronics is caused to flow in channel layer 3 through source electrode 2, channel layer 3
In enhancement region reduce, reduce drain-source current.When device backswing again, equilbrium position is returned to the right, such as the b in Fig. 2,
Form a complete regulation period.In the whole process, electrostatic potential caused by swinging can substitute conventional external grid completely
Pole tension regulation friction electron-optical transistor.
Fig. 3 is that the output characteristics that the grid-control of liquid metal of the embodiment of the present invention rubs under electron-optical transistor difference pivot angle is bent
Line.As shown in figure 3, liquid metal 10 and 9 contact area of dielectric layer increase, and rub electronics as pivot angle from negative angle increases to 0 °
Transistor gate forward voltage is learned to increase.When pivot angle is respectively -27.4 °, -23.3 °, -19 °, -14.5 °, 0 °, the liquid
State metal grid-control friction electron-optical transistor output characteristic curve is consistent with common additional grid voltage regulation, illustrates good regulation
Characteristic.
Fig. 4 is that the transfer characteristic that the grid-control of liquid metal of the embodiment of the present invention rubs under electron-optical transistor difference pivot angle is bent
Line.As shown in figure 4, the drain-source voltage that device allows is determined that liquid metal grid-control used in this example rubs by transistor fabrication process
Wiping the drain-source voltage range that electron-optical transistor allows is -20V~20V.As shown in figure 4, under constant 5V drain-source voltage, leakage
Variation function of the ource electric current as inclination angle illustrates the transfer characteristic of liquid metal grid-control friction electron-optical transistor in figure.When
For pivot angle from when changing to 0 ° for -27.4 °, drain-source current increases to 60.7 μ A from 1.7 μ A, this is non-with the working principle that Fig. 2 is illustrated
Often it coincide.
In second exemplary embodiment of the invention, a kind of electrolevel based on liquid metal is provided.Fig. 5
The structural schematic diagram of electrolevel for the embodiment of the present invention based on liquid metal.As shown in figure 5, the present invention is based on liquid gold
The electrolevel of category includes: the first field effect transistor, the second field effect transistor, friction nanometer power generator, second effect
Transistor and the first field effect transistor is answered to be arranged side by side；Friction nanometer power generator is located at the first, second field effect transistor
Top；Wherein, friction nanometer power generator includes frictional layer and liquid metal, and frictional layer is cavity structure, and liquid metal is located at institute
It states in cavity.
In order to achieve the purpose that brief description, any technology for making same application in above-mentioned first exemplary embodiment
Feature describes all and in this, without repeating identical narration.
As shown in figure 5, frictional layer 9 is covered on the grid 8 of two friction electron-optical transistors.Liquid metal 10 can be with electronics
The swing of level meter is flowed therewith, and the both end voltage of friction nanometer power generator changes therewith, and output voltage is respectively left and right two
Field effect transistor provides grid voltage.In order to make electrolevel output with pivot angle variation be it is dull, need to construct circuit connection.
The circuit connecting mode that this example uses is as follows: the drain electrode of the right field effect transistor is and left as bias voltage input mouth
The field effect transistor source electrode on side is grounded, while the drain electrode phase of the source electrode of the right field effect transistor and left side field effect transistor
Connection, as output port.It in addition is on the basis of aforesaid way, input port and output there are also a kind of circuit connecting mode
Port exchange, such output voltage are opposite with the monotonicity of foregoing circuit connection type with the monotonicity that pivot angle changes.
Fig. 6 is the working principle diagram of electrolevel of the embodiment of the present invention based on liquid metal.As shown in fig. 6, in device
The original state that part swing angle is -27.4 °, liquid metal 10 is gathered in right one side of something, in the right field effect transistor gate 8
Frictional layer 9 contact, the field effect transistor on the left side is in an off state at this time, and the right field effect transistor is in opening state
State.With device counter-clockwise swing, liquid metal 10 will converge in the left side of frictional layer 9, the state of two field effect transistors
It is opposite with original state.
Fig. 7 be the embodiment of the present invention based on the electrolevel of liquid metal under different biass, output voltage is with pivot angle
Variation relation.As shown in fig. 7, when input terminal inputs 5V, 10V, 15V, 20V bias voltage respectively, it is described based on liquid
The electrolevel output voltage of metal has almost no change with angle change curvilinear trend.Demonstrate electronics of the invention
The stability of level measurement angle.In addition, bias voltage is bigger, and within the scope of identical change of pitch angle, the variable quantity of output voltage
Increase, it is easier to distinguish different angle.
Fig. 8 be the embodiment of the present invention based on the electrolevel of liquid metal under different biass, sensitivity is with pivot angle
Variation relation.As shown in figure 8, the sensitivity of the electrolevel can increase with the increase of applying bias and the smaller of pivot angle
By force, this excellent angle measurement characteristic for showing the electrolevel, especially for the survey of small angle range (- 10 ° -10 °)
Amount.
So far, attached drawing is had been combined the present embodiment is described in detail.According to above description, those skilled in the art
It should rub electron-optical transistor to liquid metal grid-control of the present invention and electrolevel based on liquid metal has clearly
Understanding.
It should be noted that in attached drawing or specification text, the implementation for not being painted or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously
It is not limited only to various specific structures, shape or the mode mentioned in embodiment, those of ordinary skill in the art can carry out letter to it
It singly changes or replaces.
It should also be noted that, can provide the demonstration of the parameter comprising particular value herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment
It is only the direction with reference to attached drawing to term, such as "upper", "lower", "front", "rear", "left", "right" etc., is not used to limit this
The protection scope of invention.In addition, unless specifically described or the step of must sequentially occur, the sequences of above-mentioned steps there is no restriction in
It is listed above, and can change or rearrange according to required design.And above-described embodiment can be based on design and reliability
Consider, the collocation that is mixed with each other is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be with
Freely form more embodiments.
In conclusion the present invention provides a kind of liquid metal grid-control friction electron-optical transistor and the electricity based on liquid metal
Sub- level meter.By Coupled Friction electron-optical transistor and based on the friction nanometer power generator of liquid metal, pass through the pendulum of device
Electrostatic potential caused by dynamic adjusts the carrier transport in field effect transistor, and the electrolevel based on liquid metal realizes
The measurement of angle.Electrolevel of the invention has the characteristics that high sensitivity, detection range is big, stability is good, this will be in machine
The fields such as tool manufacture, civil engineering and geological prospecting are with important application prospects.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and ability
Field technique personnel can be designed alternative embodiment without departing from the scope of the appended claims.In the claims,
Any reference symbol between parentheses should not be configured to limitations on claims.Word "comprising" does not exclude the presence of not
Element or step listed in the claims.Word "a" or "an" located in front of the element does not exclude the presence of multiple such
Element.The present invention can be by means of including the hardware of several different elements and being come by means of properly programmed computer real
It is existing.In the unit claims listing several devices, several in these devices can be through the same hardware branch
To embody.The use of word first, second, and third does not indicate any sequence.These words can be explained and be run after fame
Claim.
Furthermore the word of ordinal number such as " first ", " second ", " third " etc. used in specification and claim,
To modify corresponding element, itself simultaneously unexpectedly contains and represents the element and have any ordinal number, does not also represent a certain element and another
The sequence or the sequence in manufacturing method of one element, the use of those ordinal numbers are only used to obtain the element with certain name
Clear differentiation can be made with another element with identical name.
It should be noted that running through attached drawing, identical element is indicated by same or similar appended drawing reference.In the following description,
Some specific embodiments are used for description purposes only, and should not be construed to the present invention has any restrictions, and only the present invention is real
Apply the example of example.When may cause the understanding of the present invention and cause to obscure, conventional structure or construction will be omitted.It should be noted that figure
In the shape and size of each component do not reflect actual size and ratio, and only illustrate the content of the embodiment of the present invention.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (10)
1. a kind of electrolevel based on liquid metal is used for angle measurement characterized by comprising
First field effect transistor；
Second field effect transistor is arranged side by side with the first field effect transistor；
Friction nanometer power generator, positioned at the top of the first, second field effect transistor；Wherein,
Friction nanometer power generator includes frictional layer and liquid metal, and frictional layer is cavity structure, and liquid metal is located at the cavity
It is interior.
2. electrolevel according to claim 1, which is characterized in that
The drain electrode of first field effect transistor is connect with the source electrode of the second field effect transistor, as voltage input port；
The source electrode of first field effect transistor is grounded；
The drain electrode of second field effect transistor is as voltage output port.
3. electrolevel according to claim 1 or 2, which is characterized in that the cavity structure includes bottom surface and side,
Liquid metal is located in the space that bottom surface and side are surrounded.
4. electrolevel according to claim 3, which is characterized in that the friction nanometer power generator further include:
Sealing cover, positioned at the top of frictional layer.
5. electrolevel according to claim 4, which is characterized in that the liquid metal is paved with the bottom surface of frictional layer,
No more than the half of frictional layer side.
6. according to claim 1 or electrolevel described in 2,4 or 5, which is characterized in that the liquid metal is the low of liquid
Melting point metals or alloy.
7. according to claim 1 or electrolevel described in 2,4 or 5, which is characterized in that the field effect transistor is n ditch
Road backgate type field effect transistor comprising:
Grid, positioned at the lower section of the frictional layer of friction nanometer power generator；
Substrate, positioned at the lower section of grid；
Buried oxide layer, positioned at the lower section of substrate；
Channel layer, positioned at the lower section of buried oxide layer；
First heavily doped region and the second heavily doped region are located at channel layer lower surface；
Drain electrode and source electrode, are located at the lower section of the first heavily doped region and the lower section of the second heavily doped region.
8. electrolevel according to claim 7, which is characterized in that the grid be metal, the frictional layer be with
Metal obtains the different thin-film material of electric energy power.
9. electrolevel according to claim 8, which is characterized in that the frictional layer is polytetrafluoroethylene (PTFE).
The electron-optical transistor 10. a kind of liquid metal grid-control rubs characterized by comprising
Field effect transistor；
Friction nanometer power generator, positioned at the top of field effect transistor；Wherein,
Friction nanometer power generator includes frictional layer and liquid metal, and frictional layer is cavity structure, and liquid metal is located at the cavity
It is interior.
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| US11913971B2 (en) * | 2021-02-24 | 2024-02-27 | Globalfoundries U.S. Inc. | Motion-sensitive field effect transistor, motion detection system, and method |
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