CN106340589A - Organic tribotronics transistor and contact electrification gate-controlled light-emitting device - Google Patents
Organic tribotronics transistor and contact electrification gate-controlled light-emitting device Download PDFInfo
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- CN106340589A CN106340589A CN201510393745.3A CN201510393745A CN106340589A CN 106340589 A CN106340589 A CN 106340589A CN 201510393745 A CN201510393745 A CN 201510393745A CN 106340589 A CN106340589 A CN 106340589A
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Abstract
The invention provides an organic tribotronics transistor. The organic tribotronics transistor comprises a substrate, an organic thin-film transistor formed above the substrate and a frictional nano generator formed below the substrate. The frictional nano generator comprises a static friction portion formed at the lower surface of the substrate and a movable friction portion arranged opposite to the static friction portion, wherein one of the static friction portion and the movable friction portion is electrically connected with a source electrode of the organic thin-film transistor, and the other is electrically connected with a grid electrode of the organic thin-film transistor. The organic tribotronics transistor utilizes electrostatic potential generated by a frictional generator to act as a gate electrode gate signal so as to realize regulation and control for transport characteristics of carriers in a semiconductor, thereby having good regulation and control characteristics, and realizing a brand new mode of regulating and controlling light emission of a device through mechanical input. Based on the organic tribotronics transistor, the invention further provides a contact electrification gate-controlled light-emitting device.
Description
Technical field
The present invention relates to photoelectron technical field, more particularly, to a kind of organic friction electron-optical transistor and
Contact electrification door-controlled type luminescent device.
Background technology
Organic light-emitting transistor is the new organic optoelectronic device of a class, is integrated with organic effect brilliant
The switching function of body pipe and the lighting function of Organic Light Emitting Diode, can pass through gate voltage modulator
The luminous intensity of part, shows in optical communication field, flat pannel display, solid state lighting and laser field
Potential application prospect.Although organic light-emitting transistor technology is very ripe, in view of device cell
Three end structures, need special offer grid power supply, realize regulation and control by the signal of telecommunication, lack external environment
The mechanism interacting with luminescent device direct effect.
Friction nanometer power generator is combined with conventional field effect transistor, external force touch-control can be developed
Contact electrification field-effect transistor.This device can make gate material contact electrification under external force,
Form electrostatic potential as gate signal, realize the regulation and control to carrier transport characteristic in quasiconductor.Contact
Play field effect transistor as a kind of elemental device, can derive and a series of be capable of various work(
The man-machine interaction device of energy, this is new thus to propose friction electronics (tribotronics) first
Research field.Friction electronics have coupled triboelectrification effect and characteristic of semiconductor, are that friction nanometer is sent out
The whole new set of applications of motor；Meanwhile, as the another kind completely newly side being regulated and controled carrier transport by mechanical input
Formula, will with piezoelectron together, and the development for human-computer interaction intelligent interface provides important foundation.By
In friction nanometer power generator can the higher output voltage of producing ratio piezoelectric nano electromotor, and its with half
The coupling of conductor effect is so that piezoelectron transistor compared by contact electrification field-effect transistor has
Broader external force sensing scope and more material select, and can be widely used in man-machine interaction, biography
The fields such as sensor, minute mechanical and electrical system, nanometer robot and flexible electronic.
How friction nanometer power generator to be combined with the advantage of organic semiconductor device, preparation
New man-machine interaction device has become as the direction that those skilled in the art are made great efforts to study.
Content of the invention
(1) technical problem to be solved
In view of above-mentioned technical problem, the invention provides one kind is by friction nanometer power generator and organic film
Organic friction electron-optical transistor and contact electrification door-controlled type power generating device that transistor combines, with reality
The luminescent device now being regulated and controled by external force, solves the problems, such as the active interactive of external environment and luminescent device.
(2) technical scheme
According to an aspect of the invention, it is provided a kind of organic friction electron-optical transistor.This is organic
Friction electron-optical transistor includes: substrate 10；It is formed at the OTFT of substrate 10 top
20；And it is formed at the friction nanometer power generator 30 of substrate 10 lower section.This friction nanometer power generator 30
Including: it is formed at the static friction portion 31 of substrate 10 lower surface；And be oppositely arranged with static friction portion 31
Removable dynamic friction portion；Wherein, static friction portion 31 two sides relative with removable dynamic friction portion is by being in
The material preparation of diverse location in friction electrode sequence, static friction portion 31 and removable dynamic friction portion
One of them is electrically connected with the source electrode 25 of OTFT, wherein another and polycrystalline organic thin film
The grid 21 of body pipe is electrically connected with.
According to an aspect of the invention, it is provided a kind of contact electrification door-controlled type power generating device.This connects
Touch electrification door-controlled type power generating device to include: above-mentioned organic friction electron-optical transistor；And organic
Optical diode 40, tips upside down on the top of the OTFT 20 of organic friction electron-optical transistor,
Separated by a partition 45 between the two, it includes from top to bottom: transparent substrates 41, ito thin film
42nd, organic luminous layer 43 and cathode metal layer 44.Wherein, the source electrode 25 of OTFT,
The static friction layer 31 of friction nanometer power generator is electrically connected with the cathode metal layer 44 of Organic Light Emitting Diode
Connect；The grid 21 of OTFT is electrically connected with the removable dynamic friction portion of friction nanometer power generator
Connect.
(3) beneficial effect
From technique scheme as can be seen that the present invention organic friction electron-optical transistor and contact electrification
Door-controlled type power generating device has the advantages that
(1) triboelectrification effect and organic field effect tube are combined, using friction generator
The electrostatic potential producing, as gate pole gate signal, realizes the tune to carrier transport characteristic in organic semiconductor
Control, has good modulating properties；
(2) by the use of friction generator produce electrostatic potential as gate pole gate signal, instead of tradition crystalline substance
The supply voltage of gate electrode in body pipe, realizes the direct interaction of mechanical pressure and electronic device, compares pressure
Electric electron-optical transistor has wider semi-conducting material and selects；
(3) compared with inorganic material, organic material have selection species many, receive in friction meanwhile
On rice electromotor, the transistor of integrated organic material also has preparation process is simple, low cost and other advantages；
(4) it is based on OTFT and organic luminescent device it is achieved that external force regulates and controls electroluminescent
The man-machine interaction device of light intensity.
Brief description
Fig. 1 is the structural representation according to the embodiment of the present invention organic friction electron-optical transistor；
Fig. 2 is the fundamental diagram of organic friction electron-optical transistor shown in Fig. 1；
Fig. 3 is the test result of organic friction electron-optical transistor shown in Fig. 1；
Fig. 4 is the fundamental diagram according to another embodiment of the present invention organic friction electron-optical transistor；
Fig. 5 is the structural representation according to embodiment of the present invention contact electrification door-controlled type luminescent device；
Fig. 6 is the equivalent circuit diagram of contact electrification door-controlled type luminescent device shown in Fig. 5；
Fig. 7 is the fundamental diagram of contact electrification door-controlled type luminescent device shown in Fig. 5；
Fig. 8 is the test result of contact electrification door-controlled type luminescent device shown in Fig. 5；
Fig. 9 is the operation principle according to another embodiment of the present invention contact electrification door-controlled type luminescent device
Figure；
Figure 10 is the test result of contact electrification door-controlled type luminescent device shown in Fig. 9.
[main element]
10- substrate；
20- OTFT；
21- grid；22- gate insulation layer；23- channel layer
24- drains；25- source electrode；
30- friction nanometer power generator；
31- static friction portion；32-pvc thin film；33- Copper thin film；
40 Organic Light Emitting Diodes
41- substrate of glass；42-ito thin film；43- organic luminous layer；
44- cathode metal layer；45- partition.
Specific embodiment
The present invention adopts organic material development friction electronics device, and it is tied with organic luminescent device
Close, it is possible to achieve the new way that device lights is regulated and controled by mechanical input, show that external force regulates and controls electroluminescent
The man-machine interaction device of light function.
For making the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with concrete reality
Apply mode, and referring to the drawings, the present invention is described in further detail.
In first exemplary embodiment of the present invention, there is provided a kind of organic friction electronics crystal
Pipe.Fig. 1 is the structural representation according to the embodiment of the present invention organic friction electron-optical transistor.As figure
Shown in 1, the present embodiment organic friction electron-optical transistor is based on OTFT structure, comprising:
Substrate 10；It is formed at the OTFT 20 of substrate 10 top；And it is formed at substrate 10
The friction nanometer power generator 30 of lower section.Wherein, an outfan of friction nanometer power generator 10 connect to
The source electrode 25 of OTFT 20；Another outfan connects to the grid of OTFT 20
Pole 21.
Refer to Fig. 1, in the present embodiment, using glass as substrate.Those skilled in the art should
Clear, than glass, it would however also be possible to employ the pet (polyethylene terephthalate) of flexibility,
The materials such as pi (polyimides) are used as substrate.
Refer to Fig. 1, OTFT 20 includes: grid 21, it is formed at the upper of substrate 10
Surface；Gate insulation layer 22, is formed at the top of grid；Channel layer 23, by organic semiconducting materials
Preparation, is formed at the top of gate insulation layer；Drain electrode 24 and source electrode 25, are respectively formed in channel layer 23
The both sides of top.
In the present embodiment, the grid 21 of OTFT is the ito thin film being deposited on glass.
Gate insulation layer 22 adopts tantalum pentoxide to prepare, and is deposited on the surface of ito thin film, channel layer 23 is adopted
With p-type Benzo[b material, it is deposited on the surface of gate insulation layer 22.Channel layer both sides deposit gold respectively
Belong to electrode, form Ohmic contact, the drain 24 as OTFT and source with channel layer 23
Pole 25.This drain electrode 24 and source electrode 25 are respectively connecting to the two ends of external power supply.
It should be noted that in the OTFT of other embodiments of the invention, gate insulation layer
22 can also be pmma (polymethyl methacrylate), sinx(silicon nitride), al2o3(three oxygen
Change two aluminum) etc. insulant；Channel layer 23 can also be p3ht (poly- 3- hexyl thiophene), ptaa
Organic semiconducting materials such as (poly- triaryl amine)；Source and drain metal can also be the electrode materials such as aluminum, ito.
Refer to Fig. 1, friction nanometer power generator 30 includes: be formed at quiet the rubbing of substrate 10 lower surface
Wiping portion 31；And the removable dynamic friction portion being oppositely arranged with described static friction portion 31.Wherein, quiet rub
Wiping portion 31 is electrically connected with the source electrode 25 of OTFT, removable dynamic friction portion and organic film
The grid 21 of transistor is electrically connected with.The static friction portion two sides relative with removable dynamic friction portion is by being in
In friction electrode sequence prepared by the material of diverse location, and both positional distances in friction electrode sequence are got over
Remote better.
In the present embodiment, static friction portion 31 is the Copper thin film being plated on substrate glasses 10 lower surface, and it leads to
Cross wire and be electrically connected to source electrode 25.Removable dynamic friction portion is by high molecular polymer pvc thin film 32 He
Copper thin film 33 forms.Wherein, removable dynamic friction portion can move vertically under external force, makes high score
Sub- polymer pvc thin film 32 is produced with the Copper thin film as static friction portion 31 and contacts friction or separate.
It should be noted that in the friction nanometer power generator of other embodiments of the invention, static friction portion
31 and the lower conductiving layer 33 in removable dynamic friction portion can also be other metal materials or ito material；pvc
Thin film 32 can also be other macromolecule polymer materials.
In addition it is also necessary to explanation, in the organic friction electron-optical transistor shown in Fig. 1, have
Power supply is connected between the drain electrode 24 of machine thin film transistor (TFT) and source electrode 25.When this power supply works for device
External power supply, device itself does not include this power supply, hereby illustrates.
Fig. 2 is the fundamental diagram of organic friction electron-optical transistor shown in Fig. 1.As in Fig. 2 (a)
Shown, under the effect of external force f, high molecular polymer pvc thin film 32 contacts product with Copper thin film 31
Raw friction, because different electronics fetters ability, high molecular polymer pvc thin film 32 is negatively charged,
Copper thin film 31 positively charged.Now due to the mutual constraint of positive and negative charge, will not be to organic thin-film transistor
Pipe produces impact, and gate voltage is 0.As shown in (b) in Fig. 2, when external force f removes, polyphosphazene polymer
Compound pvc thin film 32 is separated with Copper thin film 31, in high molecular polymer pvc thin film 32 negative electricity
Under the electrostatic induction effect of lotus, electronics is transferred to ito thin film 21 from Copper thin film 33, leads to Copper thin film
33 is positively charged, and ito thin film 21 is negatively charged.Due to source electrode 25 and positively charged Copper thin film
31 conductings, therefore OTFT will bear negative gate voltage, form p in channel layer 23
Type conducting channel, thus increased electric current i in channel layer 23dsSize, serve regulation and control quasiconductor
The effect of carrier transport.When external force f acts on again, high molecular polymer pvc thin film 32 with
Copper thin film 31 contacts again, due to the mutual constraint of positive and negative charge, the negative charge on ito thin film 21
Flow back to Copper thin film 33, the gate voltage that OTFT bears becomes again as 0, the p in channel layer 23
Type conducting channel is gradually reduced, electric current idsDiminish, return to the state as shown in (a) in Fig. 2.Therefore,
External force f is passed through to change high molecular polymer pvc thin film 32 and the distance between Copper thin film 31 d, can
With regulate and control OTFT in conducting channel, play the effect of grid voltage, thus realize right
The regulation and control of size of current in channel layer 23.
Fig. 3 is the test result of organic friction electron-optical transistor shown in Fig. 1.As shown in figure 3, source
Drain voltage vdsFor -8v, electric current idsBecome larger with the increase apart from d, test result meets
The operation principle of organic friction electron-optical transistor.
Fig. 4 is the fundamental diagram according to another embodiment of the present invention organic friction electron-optical transistor.
As shown in (a) in Fig. 4, the difference of this pattern is high molecular polymer pvc thin film 32 and copper
Thin film 31 is fitted, and because triboelectrification effect carries initial negative charge, it is thin that moveable part is only copper
Film 33.As shown in (b) in Fig. 4, under the effect of external force f, Copper thin film 33 and high molecular polymer pvc
Thin film 32 contacts, and due to electrostatic induction, Copper thin film 33 is positively charged, and ito thin film 21 is negatively charged
Lotus.Due to Copper thin film 31 neutral turning on source electrode 25, therefore OTFT will hold
By negative gate voltage, in channel layer 23, form p-type electric-conducting raceway groove, increased electricity in channel layer 23
Stream idsSize, serve the regulation and control effect that transports of semiconductor carriers.When external force f removes,
Copper thin film 33 is gradually disengaged with high molecular polymer pvc thin film 32, because positive and negative charge loses bundle
Tie up, the negative charge on ito thin film 21 flows back to Copper thin film 33, the grid electricity that OTFT bears
Buckling is returned as 0, and the p-type electric-conducting raceway groove in channel layer 23 is gradually reduced, electric current idsDiminish, return to
State as shown in (a) in Fig. 4.Therefore, in this mode, external force f is passed through to change high molecular polymerization
Thing pvc thin film 32 and the distance between Copper thin film 33 d, can regulate and control in OTFT
Conducting channel, plays the effect of grid voltage, thus realizing the tune to size of current in channel layer 23
Control.But its regulation and control trend is contrary with the pattern of a upper embodiment.
On the basis of above-mentioned organic friction electron-optical transistor, present invention also offers one kind contacts
Electric door-controlled type luminescent device.Fig. 5 is according to embodiment of the present invention contact electrification door-controlled type luminescent device
Structural representation.As shown in figure 5, contact electrification door-controlled type luminescent device is brilliant in organic friction electronics
On the basis of body pipe, increased an Organic Light Emitting Diode 40.Organic Light Emitting Diode 40 across
One partition 45 is buckled in the top of OTFT 20.
Continue referring to Fig. 5, this Organic Light Emitting Diode 40 includes from top to bottom: substrate of glass 41,
Ito thin film 42, organic luminous layer 43 and cathode metal layer 44.Wherein organic luminous layer 43 is by upper
Layer hole transmission layer npb and lower floor electron transfer layer alq3 composition, cathode metal layer 44 by
The silver composition of the magnesium silver alloy on upper strata and lower floor.
It should be noted that in the Organic Light Emitting Diode of other embodiments of the invention, organic light emission
Layer 43 can also be the emitting layer material in existing oled technology；Cathode metal layer 44 can also be
Other metals such as gold, aluminum.
The present embodiment contact electrification door-controlled type luminescent device is electrical with organic friction electron-optical transistor
Connected mode is slightly different, wherein the source electrode 25 of OTFT, friction nanometer power generator quiet
The Copper thin film 31 of frictional layer is electrically connected with the cathode metal layer 44 of Organic Light Emitting Diode, organic thin
The ito thin film 21 of film transistor is electric with the Copper thin film 33 in the removable dynamic friction portion of friction nanometer power generator
Property connect.
Refer to Fig. 5, the drain electrode 24 of OTFT connects to the positive pole of external power supply, organic
The ito thin film 42 of light emitting diode connects to the negative pole of external power supply.In real work, electric current
Flow to cathode metal layer 44, organic luminous layer 43 from the ito thin film 42 of Organic Light Emitting Diode
Light.
Fig. 6 is the equivalent circuit diagram of contact electrification door-controlled type luminescent device shown in Fig. 5.As shown in fig. 6,
Contact electrification door-controlled type luminescent device can be equivalent to by an OTFT, one luminous two
Pole pipe and a friction nanometer power generator composition.Wherein friction nanometer power generator instead of polycrystalline organic thin film
The grid power supply of body pipe, can provide gate voltage to OTFT under external force, regulate and control source
Size of current between leakage, this electric current is the operating current of light emitting diode simultaneously, for driving element
Luminous.Therefore, this contact electrification door-controlled type luminescent device can cause contact electrification by external force, real
The now regulation and control to luminous intensity.
Fig. 7 is the fundamental diagram of contact electrification door-controlled type luminescent device shown in Fig. 5.As in Fig. 7 (a)
Shown, under the effect of external force f, high molecular polymer pvc thin film 32 contacts product with Copper thin film 31
Raw friction, because different electronics fetters ability, high molecular polymer pvc thin film 32 is negatively charged,
Copper thin film 31 positively charged.Now due to the mutual constraint of positive and negative charge, will not be to organic thin-film transistor
Pipe produces impact, and gate voltage is 0, and the luminous intensity of device is not changed in.As shown in (b) in Fig. 7,
When external force f removes, high molecular polymer pvc thin film 32 is separated with Copper thin film 31, in high score
Under the electrostatic induction effect of sub- polymer pvc thin film 32 negative charge, electronics shifts from Copper thin film 33
To ito thin film 21, lead to Copper thin film 33 positively charged, ito thin film 21 negative charge.Due to source electrode
25 are turned on positively charged Copper thin film 31, and therefore OTFT will bear negative gate voltage,
Form p-type electric-conducting raceway groove in channel layer 23, increased electric current i in channel layer 23cSize, from
And increase the luminous intensity of device, serve the effect that regulation and control device lights.When external force f is made again
Used time, high molecular polymer pvc thin film 32 is contacted with Copper thin film 31, again due to positive and negative charge
Mutual constraint, the negative charge on ito thin film 21 flows back to Copper thin film 33, and OTFT holds
The gate voltage being subject to becomes again as 0, and the p-type electric-conducting raceway groove in channel layer 23 is gradually reduced, electric current icBecome
Little, device luminous intensity reduces, and returns to the state as shown in (a) in Fig. 7.Therefore, external force f is passed through
Change high molecular polymer pvc thin film 32 and the distance between Copper thin film 31 d, can regulate and control organic
The operating current of light emitting diode, thus realize the regulation and control to device luminous intensity.
Fig. 8 is the test result of contact electrification door-controlled type luminescent device shown in Fig. 5.As shown in figure 8,
Supply voltage vcFor -8v, electric current icWith device luminosity bcAll with the increase apart from d by
Gradual change is big, and test result meets the operation principle of contact electrification door-controlled type luminescent device.
Fig. 9 is the fundamental diagram according to another embodiment of the present invention contact electrification door-controlled type luminescent device.
As shown in (a) in Fig. 9, the difference of this pattern is high molecular polymer pvc thin film 32 and copper
Thin film 31 is fitted, and because triboelectrification effect carries initial negative charge, it is thin that moveable part is only copper
Film 33.As shown in (b) in Fig. 9, under the effect of external force f, Copper thin film 33 and high molecular polymer pvc
Thin film 32 contacts, and due to electrostatic induction, Copper thin film 33 is positively charged, and ito thin film 21 is negatively charged
Lotus.Due to Copper thin film 31 neutral turning on source class 25, therefore OTFT will hold
By negative gate voltage, in channel layer 23, form p-type electric-conducting raceway groove, increased electricity in channel layer 23
Stream icSize, thus increasing the luminous intensity of device, serve regulation and control device light effect.
When external force f removes, Copper thin film 33 is gradually disengaged with high molecular polymer pvc thin film 32, by
Lose constraint in positive and negative charge, the negative charge on ito thin film 21 flows back to Copper thin film 33, organic film
The gate voltage that transistor bears becomes again as 0, and the p-type electric-conducting raceway groove in channel layer 23 is gradually reduced, electricity
Stream icDiminish, device luminous intensity reduces, and returns to the state as shown in (a) in Fig. 9.Therefore, at this
Under pattern, external force f is passed through to change between high molecular polymer pvc thin film 32 and Copper thin film 33
Apart from d it is also possible to the operating current of regulation and control Organic Light Emitting Diode, realize to device luminous intensity
Regulation and control.But its regulation and control trend is contrary with the first pattern.
Figure 10 is the test result of contact electrification door-controlled type luminescent device shown in Fig. 9.As shown in Figure 10,
Supply voltage vcFor -8v, electric current icWith device luminosity bcAll with the increase apart from d by
Gradual change is little, and test result meets the operation principle of contact electrification door-controlled type luminescent device second pattern.
So far, already in connection with accompanying drawing, the present embodiment has been described in detail.According to above description, this
Skilled person should send out to the present invention organic friction electron-optical transistor and contact electrification door-controlled type
Electrical part has and clearly recognizes.
It should be noted that in accompanying drawing or description text, the implementation that do not illustrate or describe,
It is form known to a person of ordinary skill in the art in art, be not described in detail.Additionally,
The above-mentioned definition to each element and method is not limited in various concrete structures, the shape mentioned in embodiment
Shape or mode, those of ordinary skill in the art can simply be changed to it or be replaced, for example:
(1) substrate 10, substrate 41 and partition 45 can also be other passive substrates,
Can also be the materials such as flexible pet (polyethylene terephthalate), pi (polyimides)；
(2) demonstration of the parameter comprising particular value can be provided herein, but these parameters need not definitely etc.
It is worth in corresponding, but analog value can be similar in acceptable error margin or design constraint；
(3) direction term mentioned in embodiment, for example " on ", D score, "front", "rear", " left ",
" right " etc., is only the direction of refer to the attached drawing, is not used for limiting the scope of the invention；
In sum, the present invention by OTFT with contact-separate type friction nanometer power generator phase
In conjunction with it is proposed that a kind of organic friction electron-optical transistor, the electrostatic that contact electrification produces can be utilized
Gesture is regulating and controlling the carrier transmission characteristics in OTFT.And coupled organic light emission further
Diode, it is proposed that a kind of contact electrification door-controlled type luminescent device, can be caused by external force and contact
Electricity is regulating and controlling the operating current of device and luminous intensity it is achieved that external environment and electroluminescent device
Direct interaction, in interactive display, machinery imaging, micro-nano optical electro-mechanical system and flexible optoelectronic etc.
There is in field important application prospect.
Particular embodiments described above, is carried out to the purpose of the present invention, technical scheme and beneficial effect
Further describe, be should be understood that the specific embodiment that the foregoing is only the present invention and
, be not limited to the present invention, all within the spirit and principles in the present invention, done any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (10)
1. a kind of organic friction electron-optical transistor is it is characterised in that include:
Substrate (10)；
It is formed at the OTFT (20) above described substrate (10)；And
It is formed at the friction nanometer power generator (30) below described substrate (10), comprising:
It is formed at the static friction portion (31) of described substrate (10) lower surface；And
The removable dynamic friction portion being oppositely arranged with described static friction portion (31)；
Wherein, rubbed by being in described static friction portion (31) two sides relative with removable dynamic friction portion
Wipe material preparation, described static friction portion (31) and the removable dynamic friction portion two of diverse location in electrode sequence
One of them of person is electrically connected with the source electrode (25) of OTFT, wherein another and organic
The grid (21) of thin film transistor (TFT) is electrically connected with.
2. organic friction electron-optical transistor according to claim 1 is it is characterised in that institute
Stating substrate (10) is substrate of glass, pet substrate and pi substrate.
3. organic film electron-optical transistor according to claim 1 and 2 it is characterised in that
Described OTFT (20) includes:
Grid (21), is formed at the upper surface of described substrate (10)；
Gate insulation layer (22), is formed at the top of described grid (21)；
Channel layer (23), is prepared by organic semiconducting materials, is formed at described gate insulation layer (22)
Top；And
Drain electrode (24) and source electrode (25), are respectively formed in the both sides of described channel layer (23).
4. organic film electron-optical transistor according to claim 3 is it is characterised in that make
The organic semiconducting materials of standby described channel layer (23) are one of following group: Benzo[b material,
Poly- 3- hexyl thiophene, poly- triaryl amine.
5. organic film electron-optical transistor according to claim 3 is it is characterised in that institute
State in OTFT (20):
Gate insulation layer (22) is by one of them preparation of following material: tantalum pentoxide, polymethyl
Sour methyl ester, silicon nitride and aluminium sesquioxide；
Drain electrode (24) and source electrode (25) are prepared by metal material or ito material.
6. organic friction electron-optical transistor according to claim 1 is it is characterised in that institute
State in friction nanometer power generator (30), described static friction portion (31) is relative with removable dynamic friction portion
The material on two sides one of them be metal material or ito material, wherein another for high molecular polymer
Material.
7. organic friction electron-optical transistor according to claim 6 is it is characterised in that institute
Stating metal material is copper, and described macromolecule polymer material is pvc.
8. organic friction electron-optical transistor according to claim 6 it is characterised in that:
Described static friction portion (31) is the metal level being formed at described substrate (10) lower surface；Described
Removable dynamic friction portion includes: high molecular polymer thin film (32) and metal level (33)；Or
Described static friction portion (31) includes: be formed at described substrate (10) lower surface metal level and
It is formed at the high molecular polymer thin film (32) below this metal level；Described removable dynamic friction portion is gold
Belong to layer.
9. a kind of contact electrification door-controlled type luminescent device is it is characterised in that include:
Organic friction electron-optical transistor any one of claim 1 to 9；And
Organic Light Emitting Diode (40), is buckled in the organic film of described organic friction electron-optical transistor
The top of transistor (20), is separated by a partition (45), it includes from top to bottom between the two:
Transparent substrates (41), ito thin film (42), organic luminous layer (43) and cathode metal layer (44)；
Wherein, the static friction layer (31) of the source electrode (25) of OTFT, friction nanometer power generator
It is electrically connected with the cathode metal layer (44) of Organic Light Emitting Diode；The grid of OTFT
(21) it is electrically connected with the removable dynamic friction portion of friction nanometer power generator.
10. contact electrification door-controlled type luminescent device according to claim 9 it is characterised in that:
Described partition (45) is one of following material: glass, pet material and pi material；
The hole transmission layer npb by upper strata for the organic luminous layer (43) and the electron transfer layer alq of lower floor3
Composition, cathode metal layer (44) is made up of the magnesium silver alloy on upper strata and the silver of lower floor.
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| CN110164981A (en) * | 2018-05-16 | 2019-08-23 | 北京纳米能源与***研究所 | The method for adjusting the Schottky barrier of schottky device |
| CN111026290A (en) * | 2019-12-04 | 2020-04-17 | 霸州市云谷电子科技有限公司 | Display device and display terminal |
| CN111244287A (en) * | 2020-03-17 | 2020-06-05 | 上海奕瑞光电子科技股份有限公司 | Organic photodiode, X-ray detector and preparation method thereof |
| CN114166739A (en) * | 2021-12-09 | 2022-03-11 | 中国科学院兰州化学物理研究所 | Device for detecting friction state of hydrogen-containing diamond-like carbon film in real time and application |
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| CN110164981A (en) * | 2018-05-16 | 2019-08-23 | 北京纳米能源与***研究所 | The method for adjusting the Schottky barrier of schottky device |
| CN110164981B (en) * | 2018-05-16 | 2022-04-29 | 北京纳米能源与***研究所 | Method for adjusting Schottky barrier of Schottky device |
| CN111026290A (en) * | 2019-12-04 | 2020-04-17 | 霸州市云谷电子科技有限公司 | Display device and display terminal |
| CN111026290B (en) * | 2019-12-04 | 2023-07-14 | 霸州市云谷电子科技有限公司 | Display device and display terminal |
| CN111244287A (en) * | 2020-03-17 | 2020-06-05 | 上海奕瑞光电子科技股份有限公司 | Organic photodiode, X-ray detector and preparation method thereof |
| CN114166739A (en) * | 2021-12-09 | 2022-03-11 | 中国科学院兰州化学物理研究所 | Device for detecting friction state of hydrogen-containing diamond-like carbon film in real time and application |
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