CN109023508B - Novel continuous feeding device for single crystal furnace - Google Patents
Novel continuous feeding device for single crystal furnace Download PDFInfo
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- CN109023508B CN109023508B CN201811237423.XA CN201811237423A CN109023508B CN 109023508 B CN109023508 B CN 109023508B CN 201811237423 A CN201811237423 A CN 201811237423A CN 109023508 B CN109023508 B CN 109023508B
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- 239000013078 crystal Substances 0.000 title claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 125
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 125
- 239000010703 silicon Substances 0.000 claims abstract description 125
- 239000007788 liquid Substances 0.000 claims abstract description 110
- 230000007704 transition Effects 0.000 claims abstract description 71
- 238000010438 heat treatment Methods 0.000 claims abstract description 46
- 239000010453 quartz Substances 0.000 claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000002844 melting Methods 0.000 claims abstract description 14
- 230000008018 melting Effects 0.000 claims abstract description 14
- 238000007789 sealing Methods 0.000 claims description 60
- 238000003860 storage Methods 0.000 claims description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910002804 graphite Inorganic materials 0.000 claims description 13
- 239000010439 graphite Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 230000009471 action Effects 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 4
- 230000005484 gravity Effects 0.000 claims description 4
- 238000005086 pumping Methods 0.000 claims description 3
- 239000005341 toughened glass Substances 0.000 claims description 3
- 238000011010 flushing procedure Methods 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 abstract description 10
- 238000009826 distribution Methods 0.000 abstract description 4
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 238000012840 feeding operation Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a novel continuous feeding device for single crystal furnace, including storing device, transition device, fixing device, liquid guiding device, heating device, still include the feeding device, the feeding device sets up in the upper end of furnace body, the feeding device is provided with storing device under the feeding device, storing device sets up in the lower extreme of furnace body, transition device's entry end is connected with storing device, transition device sets up in fixing device upper end, liquid guiding device's entry end is connected with transition device's exit end, liquid guiding device's exit end sets up on quartz crucible's inner wall, heating device encircles the outside that sets up in transition device, liquid guiding device; the invention thoroughly solves the problems of uneven distribution of silicon liquid crystal phases and poor consistency of silicon liquid after the silicon material is melted in the prior art, does not need to be pre-charged, reduces the time of charging and melting, improves the melting efficiency and level of silicon rods, improves the crystal pulling efficiency, effectively reduces the labor intensity and the production cost, and is convenient to popularize because of low investment.
Description
Technical Field
The invention relates to the technical field of single polycrystal, in particular to a novel continuous feeding device for a single crystal furnace.
Background
At present, the charging of a single crystal furnace is basically carried out by placing silicon materials in a quartz crucible in advance, placing small silicon materials at the bottom of the quartz crucible when the silicon materials are placed, placing the largest silicon materials at the middle part of the quartz crucible, placing medium silicon materials at the uppermost end of the quartz crucible, and placing the silicon materials in other similar placing modes.
Disclosure of Invention
In view of the foregoing, there is a need for a new continuous feeding apparatus for a single crystal furnace.
The novel continuous feeding device for the single crystal furnace comprises a storage device, a transition device, a fixing device, a liquid guiding-out device and a heating device, wherein the storage device is arranged at the lower end of a furnace body, the inlet end of the transition device is connected with the storage device, the transition device is arranged at the upper end of the fixing device, the transition device is a funnel-shaped cavity, the inlet end of the liquid guiding-out device is connected with the outlet end of the transition device, the outlet end of the liquid guiding-out device is arranged on the inner wall of a quartz crucible, the liquid guiding-out device is a hollow pipe body, and the heating device is arranged on the outer sides of the transition device and the liquid guiding-out device in a surrounding mode.
The storage device comprises an outer pipe sleeve and an inner pipe sleeve, the outer pipe sleeve is arranged around the transition device and extends to the upper end of the fixing device, the bottom end of the inner pipe sleeve is arranged in the outer pipe sleeve and extends to the junction of the conical surface and the annular surface of the transition device, and a stable storage space is formed inside the inner pipe sleeve;
the fixing device is arranged on the supporting ring inside the furnace body, the fixing device is a hollow rigid pipe body, the inner diameter of one end of the fixing device is large, the inner diameter of the other end of the fixing device is small, and one end of the fixing device with the large outer diameter is further arranged in the through hole and used for arranging the liquid guiding-out device in the through hole.
Preferably, the novel continuous feeding device for the single crystal furnace further comprises a feeding device, the feeding device is arranged at the upper end of the furnace body, a storage device is arranged at the right lower end of the feeding device, the feeding device comprises a feeding cylinder body, a cylinder cover, a hollow threaded pipe, an annular sealing piece, a rope wheel and a feeding rope, the feeding cylinder body is a cylindrical cylinder body with a hollow inside, the cylinder cover is arranged at the top end of the feeding cylinder body, the cylinder cover is made of transparent toughened glass, an inclined surface is arranged at the bottom end of the feeding cylinder body, a through hole is formed in the center of the inclined surface, one end of the hollow threaded pipe is arranged in the through hole of the inclined surface of the feeding cylinder body, the other end of the hollow threaded pipe is arranged in a threaded pipe welded on the outer wall of the furnace body, the annular sealing piece is arranged around the outer wall of the hollow threaded pipe, the annular sealing piece is positioned between the inclined surface of the feeding cylinder body and the outer wall of the furnace body, the rope wheel is arranged on the inner wall close to the top end of the cylinder body, a groove is formed in the surface, and the feeding rope is arranged in the groove of the rope wheel.
Preferably, one side of the feeding device is also provided with an exhaust valve for exhausting gas in the feeding device; an air inlet valve is further arranged at one side of the feeding device and used for flushing argon into the feeding device; the bottom inside the feeding device is further provided with a sealing cover for sealing the through hole in the center of the inclined plane of the bottom end of the feeding device, and one side of the sealing cover is further provided with a motor for driving the sealing cover to rotate.
Preferably, the length of the hollow threaded pipe is not greater than the sum of thicknesses of the furnace body and the annular sealing piece, threads matched with the hollow threaded pipe are arranged on the inner wall of the annular sealing piece, the inner diameter of the annular sealing piece, which is close to one end of the inclined surface, is large and is used for being arranged on the outer wall of the hollow threaded pipe, the inner diameter of the annular sealing piece, which is far away from one end of the inclined surface, is small and is used for being arranged on the threaded pipe welded on the outer wall of the furnace body.
Preferably, the inner diameter of one end of the outer sleeve is small, the inner diameter of the other end of the outer sleeve is large, one end of the outer sleeve with small inner diameter contacts with the inner sleeve, the other end of the outer sleeve with large inner diameter contacts with the inner sleeve, a gap is formed between the outer sleeve and the inner sleeve in a contact area, and the upper end of the transition device is arranged in the gap.
Preferably, the outer sleeve and the inner sleeve are made of high purity graphite.
Preferably, an annular sealing sleeve is further arranged on the outer wall of the joint of the outlet end of the transition device and the inlet end of the liquid guiding device, and the annular sealing sleeve is made of high-purity graphite.
Preferably, the through hole of the fixing device is further provided with a fixing sleeve, one end of the fixing sleeve is large in inner diameter, the other end of the fixing sleeve is small in inner diameter, one end of the fixing sleeve, which is large in inner diameter, is arranged on the outer wall of the annular sealing sleeve, the other end of the fixing sleeve, which is small in inner diameter, is arranged on the outer wall of the liquid guiding-out device, and the fixing sleeve is made of high-purity graphite.
Preferably, the transition device and the liquid lead-out device are made of high purity quartz.
Preferably, the heating device comprises a first heating copper pipe, a second heating copper pipe and a third heating copper pipe, the first heating copper pipe is arranged on the outer wall of the outer pipe sleeve in a surrounding mode, the second heating copper pipe is arranged on the outer wall of the fixed pipe sleeve close to the supporting ring in a surrounding mode, and the third heating copper pipe is arranged on the outer wall of the fixed pipe sleeve close to the quartz crucible in a heat exchange mode.
According to the invention, the feeding device is arranged at the upper end of the furnace body, in order to ensure that the normal operation of the furnace body is not influenced when the silicon rod enters the furnace body, the channel between the furnace body and the feeding device is closed or opened through the sealing cover, the isolation or smoothness of the furnace body and the feeding device is realized, after the furnace body is isolated from the feeding device, the silicon rod is arranged in the feeding device, the furnace body and the feeding device are smooth, the internal environment of the furnace body and the feeding device is the same, the rope wheel is rotated until the silicon rod is arranged in the storage device, the silicon rod is melted into a drop of silicon liquid under the action of high temperature, the silicon liquid enters the quartz crucible after passing through the transition device and the liquid guiding device, the silicon rod is melted in the single crystal furnace, the silicon liquid produced by the silicon liquid has the advantages of uniform distribution of crystalline phases and good crystal consistency compared with the silicon liquid produced by the prior art, after the silicon rod is melted, the silicon rod is arranged in the furnace body through the feeding device until the second silicon rod, the third silicon rod and the N silicon rod are melted, and the continuous feeding of the silicon rod in the single crystal furnace is realized.
According to the invention, the transition device and the heating device are arranged in the furnace body, the heating device heats the silicon rods to enable the silicon rods to be melted into silicon liquid drop by drop, the silicon liquid falls into the transition device under the action of gravity, the transition device temporarily stores the silicon liquid, the silicon liquid flows to the outlet end of the transition device after accumulating to a certain degree, the silicon liquid flows into the quartz crucible along the inner wall of the quartz crucible after passing through the liquid guiding device, meanwhile, the heating devices are arranged on the outer sides of the transition device and the liquid guiding device, so that the silicon liquid is always in the same melting state in the whole movement process, the melting feeding of the silicon rods is realized, after one silicon rod is melted into the silicon liquid, the new silicon rods can be melted again, and the silicon liquid is repeatedly carried out until the silicon liquid amount after a plurality of silicon rods are melted meets the process use requirement, and the continuous feeding of the silicon rods is realized; the prior art adopts pre-charging or secondary charging, namely, block-shaped and/or granular silicon materials are directly pre-placed in a quartz crucible, molten silicon liquid is often poor in consistency and uneven in crystal phase distribution, adverse effects can be generated on a crystal pulling process, the silicon rod is synchronously molten while blanking by adopting a mode of melting a single silicon rod and continuously charging a plurality of silicon rods, molten silicon liquid flows into the quartz crucible drop by drop through a transition device, and molten silicon liquid is molten in the whole process of flowing into the quartz crucible, so that the fluidity of the silicon liquid is increased, and the advantages of good consistency, good fluidity, uniform distribution of silicon liquid crystal phases and the like are achieved, and the defects of the silicon liquid in the prior art are overcome.
The continuous feeding device thoroughly solves the problems of uneven distribution of the silicon liquid crystal phase and poor consistency of the silicon liquid after the silicon material is melted in the prior art, does not need to be charged in advance, reduces the time of feeding and melting, improves the melting efficiency and level of a silicon rod, improves the crystal pulling efficiency, effectively reduces the labor intensity and the production cost, reduces the damage of the silicon material to a quartz crucible, and is convenient to popularize because of less investment.
Drawings
FIG. 1 is a schematic cross-sectional view of a novel continuous feeding apparatus for a single crystal furnace.
Fig. 2 is an enlarged schematic view of the dosing device.
Fig. 3 is an enlarged schematic view of the seal cover and motor.
Fig. 4 is an enlarged schematic view of a silicon rod disposed in a storage device.
In the figure: the feeding device 10, the feeding cylinder 11, the cylinder cover 12, the hollow threaded pipe 13, the annular sealing piece 14, the rope pulley 15, the feeding rope 16, the exhaust valve 17, the air inlet valve 18, the sealing cover 19, the motor 191, the storage device 20, the outer pipe sleeve 21, the inner pipe sleeve 22, the transition device 30, the annular sealing sleeve 31, the fixing device 40, the fixing pipe sleeve 41, the liquid guiding-out device 50, the heating device 60, the first heating copper pipe 61, the second heating copper pipe 62 and the third heating copper pipe 63; furnace body 100, screwed pipe 200, support ring 300, heat preservation cover 400, draft tube 500, quartz crucible 600, silicon rod 700.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Referring to fig. 1 to 4, the invention provides a novel continuous feeding device for a single crystal furnace, which comprises a storage device 20, a transition device 30, a fixing device 40, a liquid guiding-out device 50 and a heating device 60, wherein the storage device 20 is arranged at the lower end of a furnace body 100, the inlet end of the transition device 30 is connected with the storage device 20, the transition device 30 is arranged at the upper end of the fixing device 40, the transition device 30 is a funnel-shaped cavity, the cross-sectional area of the inlet end of the transition device 30 is larger than the cross-sectional area of the outlet end of the transition device 30 and is used for storing silicon liquid after the silicon rod 700 is melted, the inlet end of the liquid guiding-out device 50 is connected with the outlet end of the transition device 30 and is used for guiding the silicon liquid in the transition device 30 into the liquid guiding-out device 50, the outlet end of the liquid guiding-out device 50 is arranged on the inner wall of a quartz crucible 600, the silicon liquid in the liquid guiding device 50 flows into the inner wall of the quartz crucible 600 at a uniform speed under the action of self gravity, the silicon liquid does not splash to the outside of the quartz crucible in the flowing process of the quartz crucible, the silicon liquid continuously flows into the quartz crucible 600 until the silicon liquid meets the process use requirement, the liquid guiding device 50 is a hollow pipe body, the heating device 60 is arranged at the outer side of the transition device 30 in a surrounding way and is used for applying high temperature to the silicon rod 700 in the top end of the transition device 30 and melting the silicon rod 700, the silicon rod 700 is melted into silicon liquid drop by drop and falls into the transition device 30, the heating device 60 is arranged at the outer side of the liquid guiding device 50 in a surrounding way and is used for applying high temperature to the liquid guiding device 50, so that the silicon liquid in the liquid guiding device 50 keeps a sufficient temperature, the silicon liquid is always in a molten state, and further, in the process of flowing the silicon liquid from the transition device 30 into the quartz crucible 600, the molten state of the silicon liquid is not changed, the silicon liquid has a crystal phase which is uniformly distributed, and the uniformity of the crystal is good;
the material storage device 20 comprises an outer tube sleeve 21 and an inner tube sleeve 22, the outer tube sleeve 21 is arranged around the transition device 30 and extends to the upper end of the fixing device 40, and is used for forming a sealed thermal field space inside the outer tube sleeve 21, after the first heating copper tube 61 works, the silicon rod 700 can be melted into silicon liquid drop by drop in the thermal field space, the silicon liquid uniformly drops into the transition device 30, the bottom end of the inner tube sleeve 22 is arranged in the outer tube sleeve 21 and extends to the junction of the conical surface and the annular surface of the transition device 30, a stable material storage space is formed inside the inner tube sleeve 22, and the heat of the thermal field space rises and enters into the material storage space while the silicon rod 700 is stored, so that the silicon rod 700 is preheated, the melting of the silicon rod 700 is facilitated, the waste heat of the thermal field space can be fully utilized, and the energy consumption is reduced;
the fixing device 40 is arranged on the supporting ring 300 in the furnace body 100, the fixing device 40 is a hollow rigid pipe body, the inner diameter of one end of the fixing device 40 is large, an inclined cambered surface is arranged in the end of the fixing device, the fixing device 40 is used for arranging the heat preservation cover 400 with large surface area in the fixing device 40, the inner diameter of the other end of the fixing device 40 is small, the guide cylinder 500 is arranged in the fixing device 40, and one end with small inner diameter of the fixing device 40 is further arranged in the through hole and used for arranging the liquid guiding-out device 50 in the through hole.
Referring to fig. 1 to 3, further, the novel continuous feeding device for single crystal furnace of the invention further comprises a feeding device 10, wherein the feeding device 10 is arranged at the upper end of a furnace body 100, and is used for feeding a silicon rod 700 into the feeding device 10, the silicon rod 700 passes through the furnace body 100, a storage device 20 is arranged at the right lower end of the feeding device 10, the silicon rod 700 enters the furnace body 100 after passing through the furnace body 100, and is used for arranging the silicon rod 700 into the storage device 20, the feeding device 10 comprises a feeding cylinder 11, a cylinder cover 12, a hollow threaded pipe 13, an annular sealing element 14, a rope pulley 15 and a feeding rope 16, the feeding cylinder 11 is a cylindrical cylinder with hollow inside, and is used for forming a feeding space, a cylinder cover 12 is arranged at the top end of the feeding cylinder 11, the cylinder cover 12 can be opened or closed, and is used for sealing the feeding cylinder 11, the cylinder cover 12 is made of transparent toughened glass, the bottom end of the feeding cylinder body 11 is provided with an inclined plane, a through hole is formed in the center of the inclined plane, one end of the hollow threaded pipe 13 is arranged in the through hole of the inclined plane of the feeding cylinder body 11, the other end of the hollow threaded pipe 13 is arranged in a threaded pipe 200 welded on the outer wall of the furnace body 100, the through hole of the threaded pipe 200 extends and penetrates through the furnace body 100, the threaded pipe 200 and the hollow threaded pipe 13 are arranged to form a smooth passage, a silicon rod 700 in the feeding cylinder body 11 can pass through the passage and enter the furnace body 100, the silicon rod 700 vertically enters the storage device 20 due to the action of gravity, threads are arranged on the inner wall and the outer wall of the threaded pipe 200, the threads on the inner wall of the threaded pipe 200 are matched with the threads of the hollow threaded pipe 13, the hollow threaded pipe 13 arranged at the bottom end of the feeding cylinder body 11 is rotated to enter the inner wall of the threaded pipe 200, the feeding cylinder body 11 is arranged on the furnace body 100, the screw thread of screwed pipe 200 outer wall cooperatees with annular seal 14, rotates annular seal 14, makes annular seal 14 set up on screwed pipe 200 outer wall, annular seal 14 encircles hollow screwed pipe 13 outer wall setting, and annular seal 14 is located between throwing material cylinder body 11 inclined plane and the furnace body 100 outer wall for fix hollow screwed pipe 13, further make the material cylinder body 11 that is connected with hollow screwed pipe 13 be fixed in on the furnace body 100, and do not have the gap, realize throwing material cylinder body 11, furnace body 100's fixed and sealed through annular seal 14 spare, rope sheave 15 sets up on the inner wall near the cylinder body top, and the rope sheave 15 surface sets up flutedly, throw material rope 16 setting in the recess of rope sheave 15, throw material rope 16 end is provided with silicon rod 700.
The cylinder cover 12 is transparent, so that the charging operation of the single crystal furnace is facilitated, real-time information of the silicon rod 700 in the furnace body 100, such as the position of the silicon rod 700, the melting state of the silicon rod 700, the melting progress of the silicon rod 700 and the like, can be obtained through the cylinder cover 12, and the time for charging the silicon rod 700 next time can be determined according to the real-time information of the silicon rod 700.
Referring to fig. 1 to 3, further, a vent valve 17 is further provided at one side of the feeding device 10, for pumping out the gas inside the feeding device 10; an air inlet valve 18 is further arranged at one side of the feeding device 10 and is used for filling argon into the feeding device 10; the bottom inside the feeding device 10 is further provided with a sealing cover 19 for sealing the through hole in the center of the inclined plane at the bottom of the feeding device 10, and one side of the sealing cover 19 is further provided with a motor 191 for driving the sealing cover 19 to rotate up and down.
Further, the length of the hollow threaded pipe 13 is not greater than the sum of the thicknesses of the furnace body 100 and the annular sealing member 14, one end of the hollow threaded pipe 13 is arranged inside a threaded pipe 200 welded on the outer wall of the furnace body 100, and a through hole of the threaded pipe 200 extends through the furnace body 100, so that a smooth channel is formed after the threaded pipe 200 and the hollow threaded pipe 13 are arranged, one end of the hollow threaded pipe 13 can only be arranged inside the furnace body 100, if the hollow threaded pipe 13 penetrates out of the inner wall of the furnace body 100, the feeding operation of the silicon rod 700 can be influenced, the other end of the hollow threaded pipe 13 is arranged in the through hole of the inclined surface of the feeding cylinder 11, the annular sealing member 14 is arranged on the outer wall of the hollow threaded pipe 13 at the end, and the other end of the hollow threaded pipe 13 can only be arranged inside the annular sealing member 14, so that the length of the hollow threaded pipe 13 is not greater than the sum of the thicknesses of the furnace body 100 and the annular sealing member 14; the inner wall of the annular sealing element 14 is provided with threads matched with the hollow threaded pipe 13, so that the annular sealing element 14 is fixed and sealed to the hollow threaded pipe 13, the inner diameter of the annular sealing element 14 close to one end of the inclined surface is large and is used for being arranged on the outer wall of the hollow threaded pipe 13, the hollow threaded pipe 13 is fixed and sealed, the inner diameter of the annular sealing element 14 far away from one end of the inclined surface is small and is used for being arranged on the threaded pipe 200 welded on the outer wall of the furnace body 100, and the annular sealing element 14 is fixedly arranged on the threaded pipe 200.
Referring to fig. 1 and 4, further, the inner diameter of one end of the outer pipe sleeve 21 is small, the inner diameter of the other end is large, the small inner diameter of the outer pipe sleeve 21 is in contact with the inner pipe sleeve 22, the large inner diameter of the outer pipe sleeve 21 is also in contact with the inner pipe sleeve 22, so that a gap is formed between the outer pipe sleeve 21 and the inner pipe sleeve 22 in a contact area, the upper end of the transition device 30 is arranged in the gap, the sealing arrangement of the transition device 30 and the storage device 20 is realized, no air leakage or liquid leakage exists around the transition device 30, the silicon rod 700 can be continuously and uniformly melted under the action of the heating device 60, the silicon liquid drops into the transition device 30 at the right lower end of the silicon rod 700 drop by drop, and meanwhile, the heat in the transition device 30 can only rise into the storage device 20 and preheat the silicon rod 700, so that the waste heat of the heating device 60 is recycled.
Further, the outer sleeve 21 and the inner sleeve 22 are made of high-purity graphite, so that the high-purity graphite has good heat conduction capability, heat can be continuously and stably transferred to the silicon rod 700 at the upper end of the transition device 30, and the chemical properties of graphite are stable in an argon environment, so that the melting of the silicon rod 700 is facilitated.
Referring to fig. 1 and 4, further, an annular sealing sleeve 31 is further disposed on the outer wall of the junction between the outlet end of the transition device 30 and the inlet end of the liquid guiding device 50, the annular sealing sleeve 31 is made of high-purity graphite, and has good heat conducting capability, and the chemical properties of graphite are stable under an argon environment.
The joint between the transition device 30 and the liquid guiding device 50 may generate gaps at high temperature, which may cause liquid leakage, and the joint between the transition device 30 and the liquid guiding device 50 can be fixed and sealed by providing the annular sealing sleeve 31 made of high-purity graphite at the joint.
Referring to fig. 1 and 4, further, a fixing sleeve 41 is further disposed in the through hole of the fixing device 40, and the inner diameter of one end of the fixing sleeve 41 is large, the inner diameter of the other end is small, the large inner diameter of one end of the fixing sleeve 41 is disposed on the outer wall of the annular sealing sleeve 31, and supports and fixes the annular sealing sleeve 31, so that the annular sealing sleeve 31 cannot shift at the joint of the transition device 30 and the liquid guiding-out device 50, the small inner diameter of the other end of the fixing sleeve 41 is disposed on the outer wall of the liquid guiding-out device 50, and is used for fixing the liquid guiding-out device 50, the fixing sleeve 41 is made of high-purity graphite and has good heat conducting capability, under the action of the second heating copper pipe 62 and the third heating copper pipe 63, the temperatures of the positions of the pipe bodies of the liquid guiding-out device 50 are the same, so that the silicon liquid can always keep consistent fluidity in the downward flowing process of the liquid guiding-out device 50, the silicon liquid has uniform crystalline phase distribution, and good crystal consistency.
Further, the transition device 30 and the liquid guiding-out device 50 are made of high purity quartz, and the total content of impurities in the high purity quartz is less than 20ppm, so that the impurities are low, and the silicon liquid is not adversely affected.
Referring to fig. 1 and 4, the heating device 60 further includes a first heating copper pipe 61, a second heating copper pipe 62, and a third heating copper pipe 63, where the first heating copper pipe 61 is circumferentially disposed on the outer wall of the outer tube sleeve 21, and is used for heating and melting the silicon rod 700 into a drop-by-drop silicon liquid, while the silicon liquid in the transition device 30 is kept in a molten state, and the silicon liquid does not change during flowing from the transition device 30 to the liquid guiding device 50, the second heating copper pipe 62 is circumferentially disposed on the outer wall of the fixed tube sleeve 41 near the supporting ring 300, and is used for heating the silicon liquid, so that the silicon liquid in the liquid guiding device 50 and the silicon liquid in the transition device 30 are kept in the same molten state, and the third heating copper pipe 63 is heat-exchanged and disposed on the outer wall of the fixed tube sleeve 41 near the quartz crucible 600, so that the silicon liquid in the liquid guiding device 50 and the silicon liquid in the transition device 30 are kept in the same molten state, and the fluidity and consistency of the silicon liquid are the same.
In the working process of the single crystal furnace, the single crystal furnace is charged, and the method is realized through the following steps:
1) Setting a novel continuous feeding device for the single crystal furnace, wherein the furnace body 100 normally operates, and the heating device 60 normally operates;
2) The motor 191 is turned on, the sealing cover 19 is driven to rotate downwards by the motor 191, so that the sealing cover 19 is completely arranged on a through hole in the center of an inclined plane at the bottom end of the feeding device 10, the through hole in the center of the inclined plane at the bottom end of the feeding device 10 is sealed, the furnace body 100 is isolated from the feeding device 10, the normal operation of the furnace body 100 is not affected when the feeding device 10 performs feeding operation, and meanwhile, the sealing cover 19 also has a heat conduction function;
3) Opening the cylinder cover 12, placing the silicon rod 700 into the feeding device 10, arranging the silicon rod 700 at the tail end of the feeding rope 16, and closing the cylinder cover 12 to realize the sealing of the feeding device 10;
4) Opening the exhaust valve 17, pumping out the gas in the feeding device 10 to form a vacuum environment, and closing the exhaust valve 17;
5) Opening the air inlet valve 18, filling argon into the feeding device 10 until the concentration of the argon is the same as that in the furnace body 100, and closing the air inlet valve 18;
6) Standing the feeding device 10, and transmitting heat in the furnace body 100 to the inside of the feeding device 10 through the sealing cover 19 until the temperature in the feeding device 10 is the same as the temperature in the furnace body 100;
7) The motor 191 is turned on again, the sealing cover 19 is driven by the motor 191 to rotate upwards, the sealing cover 19 is restored to the original position, the through hole in the center of the inclined surface at the bottom end of the feeding device 10 is unblocked, the furnace body 100 forms a passage with the feeding device 10 at the through hole in the center of the inclined surface at the bottom end of the feeding device 10, the inside of the feeding device 10 has the same temperature and argon concentration as those of the furnace body 100, and meanwhile, the feeding device 10 is kept still until the air pressure inside the furnace body 100 is the same as that inside the feeding device 10, so far, the environment inside the furnace body 100 is completely the same as that inside the feeding device 10;
8) Rotating the rope wheel 15, gradually passing through a through hole in the center of an inclined plane at the bottom end of the feeding device 10, extending to the upper end of the storage device 20 or the inside of the storage device 20, further arranging the silicon rod 700 in the storage device 20, and stopping rotating the rope wheel 15 when the bottom end of the silicon rod 700 just passes through the bottom end of the storage device 20;
9) The heating device 60 heats the silicon rod 700, the silicon rod 700 is melted into silicon liquid drop by drop and falls into the transition device 30 at the lower end of the silicon rod 700, the transition device 30 is connected with the liquid guiding device 50, and the silicon liquid flows out of the liquid guiding device 50 and falls into the quartz crucible 600 until the silicon rod 700 is melted;
10 Rotating the rope wheel 15, and withdrawing the feeding rope 16 until the feeding rope 16 is positioned at the original position;
11 Preparing to carry out next feeding operation on the single crystal furnace, and repeating the steps of 2-10 to realize continuous feeding of the single crystal furnace.
The modules or units in the device of the embodiment of the invention can be combined, divided and deleted according to actual needs.
The foregoing disclosure is illustrative of the preferred embodiments of the present invention, and is not to be construed as limiting the scope of the invention, as it is understood by those skilled in the art that all or part of the above-described embodiments may be practiced with equivalents thereof, which fall within the scope of the invention as defined by the appended claims.
Claims (8)
1. Novel continuous feeding device for single crystal furnace, its characterized in that: the silicon rod melting device comprises a storage device, a transition device, a fixing device, a liquid guiding device and a heating device, wherein the storage device is arranged at the lower end of a furnace body, the inlet end of the transition device is connected with the storage device, the transition device is arranged at the upper end of the fixing device, the transition device is a funnel-shaped cavity, the transition device is used for storing silicon liquid after a silicon rod is melted, the inlet end of the liquid guiding device is connected with the outlet end of the transition device and is used for guiding the silicon liquid in the transition device into the liquid guiding device, the outlet end of the liquid guiding device is arranged on the inner wall of a quartz crucible, the liquid guiding device is a hollow pipe body, the silicon liquid in the liquid guiding device flows into the inner wall of the quartz crucible at a uniform speed under the action of gravity of the liquid guiding device, the silicon liquid can not splash out of the quartz crucible in the flowing process of the quartz crucible, the silicon liquid continuously flows into the quartz crucible, the heating device is arranged at the outer side of the transition device in a surrounding mode, and is used for applying high temperature to the silicon rod in the top end of the transition device and leading the silicon rod into the liquid to drop into the silicon rod in the transition device;
the storage device comprises an outer pipe sleeve and an inner pipe sleeve, the outer pipe sleeve is arranged around the transition device and extends to the upper end of the fixing device, the bottom end of the inner pipe sleeve is arranged in the outer pipe sleeve and extends to the junction of the conical surface and the annular surface of the transition device, and a stable storage space is formed inside the inner pipe sleeve; the fixing device is arranged on a supporting ring in the furnace body, the fixing device is a hollow rigid pipe body, the inner diameter of one end of the fixing device is large, the inner diameter of the other end of the fixing device is small, and a through hole is further formed in one end of the fixing device with the large outer diameter and is used for arranging a liquid guiding device in the through hole; the feeding device is arranged at the upper end of the furnace body, the storage device is arranged at the right lower end of the feeding device, the feeding device comprises a feeding cylinder body, a cylinder cover, a hollow threaded pipe, an annular sealing piece, a rope wheel and a feeding rope, the feeding cylinder body is a cylindrical cylinder body with a hollow inside, the top end of the feeding cylinder body is provided with the cylinder cover, the cylinder cover is made of transparent toughened glass, the bottom end of the feeding cylinder body is provided with an inclined surface, a through hole is formed in the center of the inclined surface, one end of the hollow threaded pipe is arranged in the through hole of the inclined surface of the feeding cylinder body, the other end of the hollow threaded pipe is arranged in a threaded pipe welded on the outer wall of the furnace body, the annular sealing piece is arranged around the outer wall of the hollow threaded pipe, the annular sealing piece is positioned between the inclined surface of the feeding cylinder body and the outer wall of the furnace body, the rope wheel is arranged on the inner wall close to the top end of the cylinder body, the rope wheel surface is provided with a groove, the feeding rope is arranged in the groove of the rope wheel, and the feeding rope is used for fixing the silicon rod; the transition device and the liquid guiding device are made of high-purity quartz.
2. The novel continuous feeding device for single crystal furnaces as claimed in claim 1, wherein: an exhaust valve is further arranged on one side of the feeding device and used for pumping out gas in the feeding device; an air inlet valve is further arranged at one side of the feeding device and used for flushing argon into the feeding device; the bottom inside the feeding device is further provided with a sealing cover for sealing the through hole in the center of the inclined plane of the bottom end of the feeding device, and one side of the sealing cover is further provided with a motor for driving the sealing cover to rotate.
3. The novel continuous feeding device for single crystal furnaces as claimed in claim 1, wherein: the length of the hollow threaded pipe is not greater than the sum of thicknesses of the furnace body and the annular sealing piece, threads matched with the hollow threaded pipe are arranged on the inner wall of the annular sealing piece, the inner diameter of the annular sealing piece, which is close to one end of the inclined surface, is large and is used for being arranged with the outer wall of the hollow threaded pipe, the inner diameter of the annular sealing piece, which is far away from one end of the inclined surface, is small and is used for being arranged with the threaded pipe welded on the outer wall of the furnace body.
4. The novel continuous feeding device for single crystal furnaces as claimed in claim 1, wherein: the inner diameter of one end of the outer tube sleeve is small, the inner diameter of the other end of the outer tube sleeve is large, one end of the outer tube sleeve with small inner diameter is contacted with the inner tube sleeve, the other end of the outer tube sleeve with large inner diameter is also contacted with the inner tube sleeve, a gap is formed between the outer tube sleeve and the inner tube sleeve in a contact area, and the upper end of the transition device is arranged in the gap.
5. The novel continuous feeding device for single crystal furnaces as set forth in claim 1 or 4, wherein: the outer tube sleeve and the inner tube sleeve are made of high-purity graphite.
6. The novel continuous feeding device for single crystal furnaces as claimed in claim 1, wherein: the outer wall of the joint of the outlet end of the transition device and the inlet end of the liquid guiding-out device is also provided with an annular sealing sleeve, and the annular sealing sleeve is made of high-purity graphite.
7. The novel continuous feeding device for single crystal furnaces as claimed in claim 1, wherein: still be provided with fixed pipe box in fixing device's the through-hole, and fixed pipe box one end internal diameter is big, and the other end internal diameter is little, the one end that fixed pipe box internal diameter is big sets up on annular seal cover's outer wall, the other end that fixed pipe box internal diameter is little sets up on liquid guiding device's outer wall, fixed pipe box is made by high-purity graphite.
8. The novel continuous feeding device for single crystal furnaces as claimed in claim 1, wherein: the heating device comprises a first heating copper pipe, a second heating copper pipe and a third heating copper pipe, wherein the first heating copper pipe is arranged on the outer wall of the outer pipe sleeve in a surrounding mode, the second heating copper pipe is arranged on the outer wall of the fixed pipe sleeve close to the supporting ring in a surrounding mode, and the third heating copper pipe is arranged on the outer wall of the fixed pipe sleeve close to the quartz crucible in a heat exchange mode.
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| TWI732376B (en) * | 2019-12-11 | 2021-07-01 | 環球晶圓股份有限公司 | Growth apparatus for continuous czochralski |
| CN110952138A (en) * | 2019-12-13 | 2020-04-03 | 亚洲硅业(青海)股份有限公司 | Secondary feeding device and method for single crystal furnace |
| CN113061978A (en) * | 2021-03-22 | 2021-07-02 | 上海引万光电科技有限公司 | Molten silicon feeder for continuous Czochralski single crystal pulling |
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