CN109004058A - A kind of germanium slot field-effect transistor device and its manufacturing method with optics grid - Google Patents
A kind of germanium slot field-effect transistor device and its manufacturing method with optics grid Download PDFInfo
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- CN109004058A CN109004058A CN201810757711.1A CN201810757711A CN109004058A CN 109004058 A CN109004058 A CN 109004058A CN 201810757711 A CN201810757711 A CN 201810757711A CN 109004058 A CN109004058 A CN 109004058A
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 86
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 230000005669 field effect Effects 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000009413 insulation Methods 0.000 claims abstract description 36
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 24
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 22
- 230000008021 deposition Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000012528 membrane Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 238000000231 atomic layer deposition Methods 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 2
- 238000005265 energy consumption Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- TXFYZJQDQJUDED-UHFFFAOYSA-N germanium nickel Chemical compound [Ni].[Ge] TXFYZJQDQJUDED-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only Ge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of germanium slot field-effect transistor devices and its manufacturing method with optics grid.It deposits germanium film on substrate first, and forms source and drain areas and channel region by being entrained in germanium film；Secondly gate insulation layer is deposited on germanium film, etches the gate insulation layer on channel region surface, and remains certain thickness；The deposition of amorphous silicon films on gate insulation layer, etching amorphous silicon membrane form optical waveguide structure as optics grid；In gate insulation layer and amorphous silicon optical gate surface deposition protection insulating layer；Finally etching protection insulating layer forms contact through hole, and the Deposit contact electrode in contact through hole forms the germanium slot field-effect transistor device with optics grid.Device of the present invention advantages such as fast, low in energy consumption with opening speed, have broad application prospects in the fields such as high speed logic products and super large-scale integration.
Description
Technical field
The invention belongs to field of semiconductor devices, be related to a kind of high speed, low-power consumption germanium slot field-effect transistor device and
Its manufacturing method.
Background technique
Field effect transistor (MOSFET) is the most basic component units of modern integrated circuits, is that integrated circuit realizes fortune
The basis of the functions such as calculation, storage.The switching speed of MOSFET element is to determine the key factor of performance of integrated circuits height.Tradition
The upper method by shortening MOSFET element channel length promotes the firing current of device, to realize faster devices switch speed
Degree.In MOSFET element, there are parasitic capacitance between grid and source and drain, device not only needs in switching process to grid capacitance
Carry out charge and discharge, it is also necessary to charge and discharge be carried out to parasitic capacitance, the switching speed of device is caused to reduce.Due between grid and source and drain
Parasitic capacitance can not also reduce with the shortening equal proportion of channel length, therefore shorten MOSFET element channel length method not
It can continue the switching speed of promotion device.It, can be from one by structures such as air side walls at present in the MOSFET element of volume production grade
Determine to reduce the parasitic capacitance between grid and source and drain in degree, but can not thoroughly eliminate the parasitic capacitance.Therefore in high-performance
In MOSFET element, the parasitic capacitance between suppressor grid and source and drain is one of the key method for promoting device switching speed.
For this problem, the present invention proposes to use method of the optical waveguide as MOSFET grid.It is logical with conventional MOS FET
Cross the working principle difference that gate voltage induced charge generates conducting channel, optics gate MOSFET device benefit proposed by the present invention
It uses optical waveguide as the grid of device, makes to generate photo-generated carrier in channel by applying optical signal in optical waveguide, realize device
The conducting of part.Optics gate structure can avoid the parasitic capacitance between grid and source and drain completely, to sufficiently promote opening for device
Close speed.It is extremely weak to the absorption of light but since silicon is indirect band-gap semiconductor, therefore the present invention is proposed using germanium as device
The channel material of part.Germanium has direct band gap, to the absorption of light much stronger than silicon, therefore can be realized high performance MOSFET device.
On the other hand, there is electric leakage in traditional MOSFET grid, especially in the very thin high performance MOSFET device of gate insulation layer,
Electric leakage of the grid is to lead to one of increased principal element of IC power consumption.Using the MOSFET element of optics gate structure, energy
Electric leakage of the grid in enough thorough abatement devices, can sufficiently reduce the power consumption of integrated circuit.In conclusion the present invention proposes one kind
Germanium slot field-effect transistor device with optics grid and preparation method thereof realizes high speed, the MOSFET element of low-power consumption.
Summary of the invention
It is an object of the invention to for parasitic capacitance is difficult to disappear between grid and source and drain in existing FET device
The deficiency removed provides a kind of germanium channelling effect transistor device and its manufacturing method based on optics grid.
The purpose of the present invention is achieved through the following technical solutions: a kind of germanium channel field-effect with optics grid
Transistor device sequentially consists of: substrate, germanium film, insulating layer；The germanium film has source and drain areas and channel region
Optical waveguide structure is arranged in the insulating layer above channel region in domain, the optics grid as device；The insulating layer has two
A contact through hole, is respectively set source electrode and drain electrode.
A kind of manufacturing method of the germanium slot field-effect transistor device with optics grid, this method include following step
It is rapid:
(1) germanium film is deposited on substrate, and forms source and drain areas and channel region by being entrained in germanium film；
(2) gate insulation layer is deposited on germanium film, etches the gate insulation layer on channel region surface, and remains certain thickness；
(3) deposition of amorphous silicon films on gate insulation layer, etching amorphous silicon membrane form optical waveguide structure as optics grid
Pole；
(4) in gate insulation layer and amorphous silicon optical gate surface deposition protection insulating layer；
(5) etching protection insulating layer forms contact through hole, and the Deposit contact electrode in contact through hole is ultimately formed with light
Learn the germanium slot field-effect transistor device of grid.
Further, the germanium film deposited on substrate with a thickness of 3 nanometers to 30 nanometers；The grid deposited on germanium film are exhausted
Edge layer with a thickness of 100 nanometers to 500 nanometers；It is remaining with a thickness of 10 nanometers after the gate insulation layer for etching channel region surface
To 50 nanometers；
Further, optical waveguide structure with a thickness of 100 nanometers to 300 nanometers.
Further, the substrate material is including but not limited to silicon, silicon face cvd silicon oxide, quartz, sapphire；It is described
The material of gate insulation layer is including but not limited to silica, aluminium oxide.
Further, the channel material of the device is germanium, and form is amorphous germanium, polycrystalline germanium or monocrystalline germanium.
Further, in the step (1), the method for depositing germanium film is molecular beam epitaxy, hot evaporation or sputtering, doping
The method of germanium film is ion implanting or thermal diffusion.
Further, in the step (2), deposit gate insulation layer method be chemical vapor deposition or atomic layer deposition,
The method of gate insulator layer is reactive ion etching.
Further, in the step (3), the method for deposition of amorphous silicon films is chemical vapor deposition, etches amorphous silicon
The method of film is reactive ion etching.
Further, in the step (4), protect the material of insulating layer including but not limited to aluminium oxide, silica and nitrogen
SiClx, deposition method are chemical vapor deposition or atomic layer deposition；In the step (5), the method for etching protection insulating layer is
Reactive ion etching.
Further, in the step (5), the material of electrode is contacted including but not limited to nickel, tungsten, deposition method is to splash
It penetrates, chemical vapor deposition or atomic layer deposition.
The beneficial effects of the present invention are: the germanium slot field-effect transistor device in the present invention with optics grid uses light
Waveguide gate structure and germanium channel material have the advantage that 1 compared to traditional silicon slot field-effect transistor, using light wave
The gate structure as device is led, the dead resistance between grid and source and drain can be eliminated, promotes the switching speed of device；2, it uses
Optical signal and non-electrical signal induces carrier in channels, have the function of reduce electric leakage, advantageously reduce the power consumption of device；
3, channel is able to ascend to the absorbability of light using germanium as channel material, increases the electric current of device.Having in the present invention
The germanium slot field-effect transistor device of optics grid, the advantages such as parasitic capacitance between big, non-grid and source and drain with electric current, in height
The fields such as speed, low-power logic device and super large-scale integration have broad application prospects.
Detailed description of the invention
Fig. 1 (a) is to grow germanium film schematic diagram on substrate；
Fig. 1 (b) is that doping germanium film forms source and drain areas schematic diagram；
Fig. 2 (a) is that gate insulation layer schematic diagram is grown on germanium film and source and drain areas；
Fig. 2 (b) is the channel region schematic diagram that gate insulator layer forms device；
Fig. 3 (a) is the deposition of amorphous silicon films schematic diagram on gate insulation layer；
Fig. 3 (b) is that etching amorphous silicon membrane is formed after optical waveguide structure along device channel length direction schematic cross-section；
Fig. 3 (c) is that etching amorphous silicon membrane is formed after optical waveguide structure along device channel width direction schematic cross-section；
Fig. 4 (a) is after device surface deposits protection insulating layer along device channel length direction schematic cross-section；
Fig. 4 (b) is after device surface deposits protection insulating layer along device channel width direction schematic cross-section；
Fig. 5 (a) is that etching protection insulating layer forms contact through hole schematic diagram；
Fig. 5 (b) is the deposit metal electrodes schematic diagram in contact through hole；
In figure, quartz substrate 10, germanium film 11, heavy doping germanium area 12, gate insulation layer 20, amorphous silicon membrane 30, optical waveguide
31, insulating layer 40, contact through hole 50, contact electrode 51 are protected.
Specific embodiment
With reference to the accompanying drawing and specific embodiment invention is further described in detail.
A kind of germanium slot field-effect transistor device with optics grid provided by the invention, sequentially consists of:
Substrate, germanium film, insulating layer；The germanium film has source and drain areas and channel region, in the insulating layer above channel region
Optical waveguide structure, the optics grid as device are set；There are two contact through holes for the insulating layer tool, and source electrode is respectively set
And drain electrode.
The manufacturing method of the germanium slot field-effect transistor device includes the following steps:
(1) germanium film is deposited on substrate, and forms source and drain areas and channel region by being entrained in germanium film；
(2) gate insulation layer is deposited on germanium film, etches the gate insulation layer on channel region surface, and remains certain thickness；
(3) deposition of amorphous silicon films on gate insulation layer, etching amorphous silicon membrane form optical waveguide structure as optics grid
Pole；
(4) in gate insulation layer and amorphous silicon optical gate surface deposition protection insulating layer；
(5) etching protection insulating layer forms contact through hole, and the Deposit contact electrode in contact through hole is ultimately formed with light
Learn the germanium slot field-effect transistor device of grid.
Further, the germanium film deposited on substrate with a thickness of 3 nanometers to 30 nanometers；The grid deposited on germanium film are exhausted
Edge layer with a thickness of 100 nanometers to 500 nanometers；It is remaining with a thickness of 10 nanometers after the gate insulation layer for etching channel region surface
To 50 nanometers；
Further, optical waveguide structure with a thickness of 100 nanometers to 300 nanometers.
Further, the substrate material is including but not limited to silicon, silicon face cvd silicon oxide, quartz, sapphire；It is described
The material of gate insulation layer is including but not limited to silica, aluminium oxide.
Further, the channel material of the device is germanium, and form is amorphous germanium, polycrystalline germanium or monocrystalline germanium.
Further, in the step (1), the method for depositing germanium film is molecular beam epitaxy, hot evaporation or sputtering, doping
The method of germanium film is ion implanting or thermal diffusion.
Further, in the step (2), deposit gate insulation layer method be chemical vapor deposition or atomic layer deposition,
The method of gate insulator layer is reactive ion etching.
Further, in the step (3), the method for deposition of amorphous silicon films is chemical vapor deposition, etches amorphous silicon
The method of film is reactive ion etching.
Further, in the step (4), protect the material of insulating layer including but not limited to aluminium oxide, silica and nitrogen
SiClx, deposition method are chemical vapor deposition or atomic layer deposition；In the step (5), the method for etching protection insulating layer is
Reactive ion etching.
Further, in the step (5), the material of electrode is contacted including but not limited to nickel, tungsten, deposition method is to splash
It penetrates, chemical vapor deposition or atomic layer deposition.
Embodiment 1: in the present embodiment, using quartz substrate, the germanium slot field-effect transistor device with optics grid
The preparation method is as follows:
(1) as shown in Fig. 1 (a), germanium film 11 is deposited in quartz substrate 10, with a thickness of 3 nanometers to 30 nanometers, deposition side
Method is chemical vapor deposition, vapor deposition or sputtering；
(2) as shown in Fig. 1 (b), source and drain areas of the heavy doping germanium area 12 as device is formed to the doping of germanium film 11, is adulterated
Method be ion implanting or thermal diffusion；
(3) as shown in Fig. 2 (a), gate insulation layer 20, gate insulation layer 20 are deposited in germanium film 11 and 12 surface of heavy doping germanium area
Material including but not limited to aluminium oxide and silica, with a thickness of 100 nanometers to 500 nanometers, deposition method is chemical vapor deposition
Product, atomic layer deposition or sputtering；
(4) as shown in Fig. 2 (b), insulating layer of the gate insulator floor 20 up to 12 surface of germanium film 11 and heavy doping germanium area
With a thickness of 10 nanometers to 50 nanometers, as the channel region of device, the method for etching is wet etching or reactive ion etching；
(5) such as Fig. 3 (a), in 20 surface deposition of amorphous silicon films 30 of gate insulation layer, with a thickness of 100 nanometers to 300 nanometers,
The method of deposition is chemical vapor deposition；
(6) as shown in Fig. 3 (b) and Fig. 3 (c), etching amorphous silicon membrane 30 forms optical waveguide until 20 surface of gate insulation layer
31, the method for etching is reactive ion etching；
(7) it as shown in Fig. 4 (a) and Fig. 4 (b), in gate insulation layer 20 and 31 surface of optical waveguide deposition protection insulating layer 40, protects
The material of insulating layer 40 is protected including but not limited to silica and silicon nitride, the method for deposition is chemical vapor deposition or atomic layer deposition
Product；The material of gate insulation layer 20 can be identical as protection insulating layer 40；
(8) as shown in Fig. 5 (a), etching protects insulating layer 40 to form contact through hole 50 up to 12 surface of heavy doping germanium area, carves
The method of erosion is reactive ion etching；
(9) as shown in Fig. 5 (b), the material of the Deposit contact electrode 51 in contact through hole 50, contact electrode 51 includes but not
It is limited to nickel germanium alloy, the method for deposition is vapor deposition, sputtering, chemical vapor deposition or atomic layer deposition.
Above-described embodiment is used to illustrate the present invention, rather than limits the invention, in spirit of the invention and
In scope of protection of the claims, to any modifications and changes that the present invention makes, protection scope of the present invention is both fallen within.
Claims (10)
1. a kind of germanium slot field-effect transistor device with optics grid, which is characterized in that sequentially consist of: lining
Bottom, germanium film, insulating layer；The germanium film has source and drain areas and channel region, sets in the insulating layer above channel region
Optical waveguide structure is set, the optics grid as device；Insulating layer tool there are two contact through hole, be respectively set source electrode and
Drain electrode.
2. a kind of manufacturing method of the germanium slot field-effect transistor device with optics grid, which is characterized in that this method packet
Include following steps:
(1) germanium film is deposited on substrate, and forms source and drain areas and channel region by being entrained in germanium film；
(2) gate insulation layer is deposited on germanium film, etches the gate insulation layer on channel region surface, and remains certain thickness；
(3) deposition of amorphous silicon films on gate insulation layer, etching amorphous silicon membrane form optical waveguide structure as optics grid；
(4) in gate insulation layer and amorphous silicon optical gate surface deposition protection insulating layer；
(5) etching protection insulating layer forms contact through hole, and the Deposit contact electrode in contact through hole is ultimately formed with optics grid
The germanium slot field-effect transistor device of pole.
3. the manufacturing method of the germanium slot field-effect transistor device according to claim 2 with optics grid, special
Sign is, the germanium film deposited on substrate with a thickness of 3 nanometers to 30 nanometers；The thickness of the gate insulation layer deposited on germanium film
It is 100 nanometers to 500 nanometers；It is remaining with a thickness of 10 nanometers to 50 nanometers after the gate insulation layer for etching channel region surface；Light
Waveguiding structure with a thickness of 100 nanometers to 300 nanometers.
4. the manufacturing method of the germanium slot field-effect transistor device according to claim 2 with optics grid, special
Sign is that the substrate material is including but not limited to silicon, silicon face cvd silicon oxide, quartz, sapphire；The gate insulation layer
Material is including but not limited to silica, aluminium oxide.
5. the manufacturing method of the germanium slot field-effect transistor device according to claim 2 with optics grid, special
Sign is that the channel material of the device is germanium, and form is amorphous germanium, polycrystalline germanium or monocrystalline germanium.
6. the manufacturing method of the germanium slot field-effect transistor device according to claim 2 with optics grid, special
Sign is, in the step (1), the method for depositing germanium film is molecular beam epitaxy, hot evaporation or sputtering, adulterates the side of germanium film
Method is ion implanting or thermal diffusion.
7. the manufacturing method of the germanium slot field-effect transistor device according to claim 2 with optics grid, special
Sign is, in the step (2), the method for depositing gate insulation layer is chemical vapor deposition or atomic layer deposition, gate insulator
The method of layer is reactive ion etching.
8. the manufacturing method of the germanium slot field-effect transistor device according to claim 2 with optics grid, special
Sign is, in the step (3), the method for deposition of amorphous silicon films is chemical vapor deposition, the method for etching amorphous silicon membrane
For reactive ion etching.
9. the manufacturing method of the germanium slot field-effect transistor device according to claim 2 with optics grid, special
Sign is, in the step (4), protects the material of insulating layer including but not limited to aluminium oxide, silica and silicon nitride, deposition side
Method is chemical vapor deposition or atomic layer deposition；In the step (5), the method for etching protection insulating layer is reactive ion quarter
Erosion.
10. the manufacturing method of the germanium slot field-effect transistor device according to claim 2 with optics grid, special
Sign is, in the step (5), contacts the material of electrode including but not limited to nickel, tungsten, deposition method is sputtering, chemical gaseous phase
Deposition or atomic layer deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810757711.1A CN109004058B (en) | 2018-07-11 | 2018-07-11 | Germanium channel field effect transistor device with optical grid and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810757711.1A CN109004058B (en) | 2018-07-11 | 2018-07-11 | Germanium channel field effect transistor device with optical grid and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN109004058A true CN109004058A (en) | 2018-12-14 |
| CN109004058B CN109004058B (en) | 2020-06-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810757711.1A Active CN109004058B (en) | 2018-07-11 | 2018-07-11 | Germanium channel field effect transistor device with optical grid and manufacturing method thereof |
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