CN108987567A - Phase transformation superlattice film, phase-changing memory unit and preparation method thereof - Google Patents
Phase transformation superlattice film, phase-changing memory unit and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Abstract
The invention belongs to technical field of semiconductor, and in particular to a kind of phase transformation superlattice film, phase-changing memory unit and preparation method thereof.The phase transformation superlattice film, including phase-change material layers and for providing the compound layer of crystallization template for the phase-change material layers；Wherein, the compound crystallographic system having the same of the compound of the compound layer and the phase-change material layers, and lattice constant a is not much different in 40%.The phase transformation superlattice film is for being remarkably improved the service speed of phase-changing memory unit, and improve its thermal stability, finally extending the service life of device in phase-changing memory unit.
Description
Technical field
The invention belongs to technical field of semiconductor, and in particular to a kind of phase transformation superlattice film, phase transition storage list
Member and preparation method thereof.
Background technique
Memory is the important component of current semi-conductor market, is the foundation stone of information technology, either in life
Or it all plays an important role in national economy.Information content is sharply increased along with the development of society, high data storage
The research and development of the memory of density become the vital task of memory researcher；Wherein, phase-changing memory unit is due to having high speed
Read, high erasable number, non-volatile, component size is small, low in energy consumption, anti-strong motion and it is anti-radiation the advantages that, by international half
Conductor Industry Association be considered most possibly to replace current flash memories and become future memory main product device and
Become the device of commercial product at first.
The basic principle of phase transition storage is reversible between high resistance and low resistance using storage material in device
Become the storage to realize " 1 " and " 0 ".Realize that the high-resistance consecutive variations of storage material may be implemented by controlling using electric signal
Multistage storage, to greatly improve the information storage capability of memory.In phase transition storage, phase-change material is utilized in amorphous
Reversible transition between polycrystalline realizes above-mentioned resistance variations.Common phase-change storage material system mainly has Ge-Sb-
Te, Si-Sb-Te, Ag-In-Sb-Te etc..Especially GST (Ge-Sb-Te) has been widely used for phase change disc and phase change memory
Device.But there is also following problems: 1, write operation speed is slow, and phase velocity needs to be further increased；2, it is high to wipe operation power consumption, it is unfavorable
In the promotion of storage density, in view of these disadvantages, need to explore the storage material with more preferable performance.Therefore, the prior art has
It is to be modified.
Summary of the invention
It is an object of the invention to overcome the above-mentioned deficiency of the prior art, a kind of phase transformation superlattice film is provided, phase transformation is deposited
Storage unit and preparation method thereof, it is intended to solve that phase-change storage material system phase velocity in existing phase transition storage is slow, function
The high technical problem with thermal stability difference of consumption.
For achieving the above object, The technical solution adopted by the invention is as follows:
One aspect of the present invention provides a kind of phase transformation superlattice film, including phase-change material layers and for being the phase-change material
Layer provides the compound layer of crystallization template；Wherein, the compound of the compound of the compound layer and the phase-change material layers has
There is identical crystallographic system, and lattice constant a is not much different in 40%.
Another aspect of the present invention provides a kind of phase-changing memory unit, including hearth electrode, top electrode and of the invention above-mentioned
Phase transformation superlattice film, the phase transformation superlattice film are arranged between the hearth electrode and the top electrode.
Finally, including the following steps: the present invention also provides a kind of preparation method of phase-changing memory unit
Substrate is provided, is prepared with hearth electrode on the substrate；
The media pack of the hearth electrode is covered in deposition over the substrate, in the vertical of the hearth electrode region
The deposition hole that the media pack obtains exposing the hearth electrode, the media pack after etching are etched on direction
Form clad；
Phase transformation superlattice film and top electrode are sequentially depositing in the deposition hole；Wherein, the phase transformation superlattice film
Including phase-change material layers and for providing the compound layer of crystallization template for the phase-change material layers；Wherein, the compound layer
Compound and the phase-change material layers compound crystallographic system having the same, and lattice constant a is not much different in 40%.
In phase transformation superlattice film provided by the invention, compound layer provides crystallization template for phase-change material layers, because of the change
The compound crystallographic system having the same of the compound and phase-change material layers of nitride layer is closed, and lattice constant a is not much different in 40%, this
The crystallization rate of the phase-change material layers of growth-dominated type is substantially improved in sample, and because of the compound layer compound and phase transformation material
The lattice constant a of the compound of the bed of material is not much different in 40%, further improves the steady of phase transformation superlattice thin film structures entirety
It is qualitative；The phase transformation superlattice film is for being remarkably improved the service speed of phase-changing memory unit in phase-changing memory unit
And stability, finally extend the service life of device.
Phase-changing memory unit provided by the invention is provided with the distinctive phase transformation of the present invention between hearth electrode and top electrode
Superlattice film, the compound layer in the phase transformation superlattice film provides crystallization template for phase-change material layers, because of the compound layer
Compound and phase-change material layers compound crystallographic system having the same, and lattice constant a is not much different in 40%, so that
The crystallization rate of the phase-change material layers of growth-dominated type is substantially improved, and then improves the service speed of phase-changing memory unit, leads
Cause phase transition storage that there is the erasable service speed of picosecond；Meanwhile the compound layer and phase-change material layers being stacked are reduced
Phase transformation active area, advantageously reduces power consumption, and the phase transformation superlattice film is still able to maintain superlattices at high temperature
The thermal stability of structure finally extends the service life of device.
The preparation method of phase-changing memory unit provided by the invention can be compatible with existing CMOS technology, and obtains
Phase-changing memory unit in have distinctive phase transformation superlattice film, can be improved phase-changing memory unit operation speed
Degree advantageously reduces power consumption, improves the thermal stability of superlattice structure entirety, finally extends the service life of device.
Detailed description of the invention
Fig. 1 is the restricted type structural phase-change memory cellular construction schematic diagram of the embodiment of the present invention 1；
Fig. 2 is the phase change memory unit structure schematic diagram of the T-type structure of the embodiment of the present invention 2；
Fig. 3 is the electrical operation performance chart of the existing phase-changing memory unit based on GST phase-change material；
Fig. 4 is the restricted type structural phase-change memory unit based on phase transformation superlattice thin film structures of the embodiment of the present invention 1
Electrical operation performance chart.
Specific embodiment
In order to which technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention is not intended to limit the present invention.
On the one hand, the embodiment of the invention provides a kind of phase transformation superlattice film, including phase-change material layers and for for institute
It states phase-change material layers and the compound layer of crystallization template is provided；Wherein, the compound of the compound layer and the phase-change material layers
Compound crystallographic system having the same, and lattice constant a is not much different in 40%.
In phase transformation superlattice film provided in an embodiment of the present invention, compound layer provides crystallization template for phase-change material layers,
Because of the compound of the compound layer and the compound of phase-change material layers crystallographic system having the same, and lattice constant a be not much different in
40%, so that the crystallization rate of the phase-change material layers of growth-dominated type is substantially improved, and because of the compound layer compound
It is not much different with the lattice constant a of the compound of phase-change material layers in 40%, further improves phase transformation superlattice thin film structures
Whole stability；The phase transformation superlattice film is for being remarkably improved phase-changing memory unit in phase-changing memory unit
Service speed and stability finally extend the service life of device.
Further, in the phase transformation superlattice film of the embodiment of the present invention, the compound layer is MxTe1-xLayer, the phase
Change material layer is SbyTe1-yLayer；Wherein, any one of M in Mn, Ni, Zn, Zr, Mo, Rh, Pd, Cd, Ir, Pt, 0 < x
1,0 < y < 1 of <.The MxTe1-xLayer and SbyTe1-yLayer compound crystallographic system having the same, and lattice constant a be not much different in
40%, i.e. MxTe1-xThe lattice constant a of compound is Sb in layeryTe1-yLayer in compound lattice constant a 60-140% it
Between, if difference is too big, it is unfavorable for MxTe1-xLayer is SbyTe1-yLayer is provided crystallization template and is promoted with crystallization rate, will lead to simultaneously
Structural instability, and the lattice constant a difference lower than 40% can make amorphous state SbyTe1-yWith neighbouring crystalline state MxTe1-xLayer be
It is nucleated template, more nucleating points is obtained, makes SbyTe1-yCrystallization rate is more obviously improved, and then improves phase transition storage
Service speed.Meanwhile the MxTe1-xWith SbyTe1-yBetween lattice constant a difference be unfavorable for phon scattering, be conducive to improve plus
The thermal efficiency, and then reduce power consumption.And MxTe1-xLayer fusing point with higher, is more able to maintain the stability of structure at high temperature,
The thermal stability of superlattice structure entirety is further improved,
Further, above-mentioned MxTe1-xLayer and SbyTe1-yIn layer: 0.32≤x≤0.67,0.39≤y≤0.81.Such as
SbTe material has: Sb2Te3、Sb2Te1、Sb3Te1、Sb4Te1Deng SbyTe1-yLayer can be Sb0.4Te0.6Layer；MxTe1-xLayer can be with
For Pt0.4Te0.6Layer, Ir0.5Te0.5Layer.
Further, in the phase transformation superlattice film of the embodiment of the present invention, the phase transformation superlattice film includes described in N layers
Compound layer and the N layers of phase-change material layers, and the compound layer and the phase-change material layers are arranged alternately；Wherein, 3≤N
≤25.With N layers of MxTe1-xLayer and N layers of SbyTe1-yFor layer, 3≤N≤25.Single layer MxTe1-xLayer and single layer SbyTe1-yLayer alternating
It stacks, more reduces phase transformation active area, further significantly reduce power consumption；And every layer of MxTe1-xLayer is SbyTe1-yLayer
It is separated, weaken Sb in phase transition process repeatedlyyTe1-yElements diffusion effect, the stability of chemical constituent is improved, into one
Step improves the circulate operation number of device cell, extends the service life of device cell.The MxTe1-xLayer and the SbyTe1-yLayer
In the phase transformation superlattice film being arranged alternately, preferably first layer MxTe1-xLayer and nethermost substrate contact, right later layer
SbyTe1-yLayer is recycled with this and stacks 3-25 period.Recycle the final phase transformation superlattice film of heap poststack with a thickness of 6-
500nm, i.e., the overall thickness of the phase change region undergone phase transition in the described phase transformation superlattice film are 6-500nm.Every layer of chemical combination
Nitride layer with a thickness of 1-10nm；Every layer of phase-change material layers with a thickness of 1-10nm；
On the other hand, the present invention implementation a kind of phase-changing memory unit is provided, the phase-changing memory unit include hearth electrode,
The above-mentioned phase transformation superlattice film of top electrode and the embodiment of the present invention, phase transformation superlattice film setting in the hearth electrode and
Between the top electrode
Phase-changing memory unit provided in an embodiment of the present invention is provided with implementation of the present invention between hearth electrode and top electrode
The distinctive phase transformation superlattice film of example, the compound layer in the phase transformation superlattice film provide crystallization template for phase-change material layers,
Because of the compound of the compound layer and the compound of phase-change material layers crystallographic system having the same, and lattice constant a be not much different in
40%, so that the crystallization rate of the phase-change material layers of growth-dominated type is substantially improved, and then improves phase-changing memory unit
Service speed, cause phase transition storage have picosecond erasable service speed；Meanwhile the compound layer and phase being stacked
Change material layer reduces phase transformation active area, advantageously reduces power consumption, and the phase transformation superlattice film is at high temperature still
It is able to maintain the thermal stability of superlattice structure, finally extends the service life of device.
Further, the phase-changing memory unit further includes substrate and media packs layer, and the hearth electrode is arranged in institute
It states on substrate, the media packs layer is coated on the periphery of the hearth electrode, phase transformation superlattice film and top electrode.Media packs
Layer is not contacted with the top electrode surface, and the material of the media packs layer is selected from SiO2Or Si3N4, preferably Si3N4。
Further, in the phase-changing memory unit, the material of the hearth electrode is any one in Al, W and TiN
Kind；Any one of the material of the top electrode in Al, W and TiN.The thickness of hearth electrode and top electrode can be 50-
200nm, preferably 100nm.The substrate can be sheet glass or silicon oxide substrate.In the embodiment of the present invention, the substrate
Preferably silicon oxide substrate.
Further, phase-changing memory unit provided in an embodiment of the present invention is restricted type structural phase-change memory unit
(such as embodiment 1) or T-type structure phase-changing memory unit (such as embodiment 2).
On the other hand, the embodiment of the invention also provides a kind of preparation methods of phase-changing memory unit, including walk as follows
It is rapid:
S01: substrate is provided, is prepared with hearth electrode on the substrate；
S02: deposition covers the media pack of the hearth electrode over the substrate, in hanging down for the hearth electrode region
Histogram etches the deposition hole that the media pack obtains exposing the hearth electrode, the media packs material after etching upwards
Material forms clad；
S03: phase transformation superlattice film and top electrode are sequentially depositing in the deposition hole；Wherein, the phase transformation superlattices
Film include phase-change material layers and for for the phase-change material layers provide crystallization template compound layer；Wherein, the chemical combination
The compound crystallographic system having the same of the compound of nitride layer and the phase-change material layers, and lattice constant a is not much different in 40%.
The preparation method of phase-changing memory unit provided in an embodiment of the present invention can be compatible with existing CMOS technology, and
And there is distinctive phase transformation superlattice film in obtained phase-changing memory unit, the behaviour of phase-changing memory unit can be improved
Make speed, advantageously reduce power consumption, improves the thermal stability of superlattice structure entirety, finally extend the service life of device.
Further, compound layer, phase-change material layers, hearth electrode, top electrode and the media packs in above-mentioned preparation method
The preferred embodiment of layer has been described above, and no longer illustrates herein.Wherein, phase transformation superlattice film includes the N layers of compound layer and N
The layer phase-change material layers, and the compound layer and the phase-change material layers alternating deposit；Wherein, 3≤N≤25.I.e. with list
Layer MxTe1-xLayer and single layer SbyTe1-ySuccessively vertical stacking deposits layer, is recycled with this and stacks 3-25 period.
The present invention successively carried out test of many times, and it is further detailed as reference pair invention progress now to lift A partial experiment result
Thin description, is described in detail combined with specific embodiments below.
Embodiment 1
A kind of phase-changing memory unit of restricted type structure, as shown in Figure 1 comprising growth substrates, are situated between hearth electrode 103
Matter clad 104, phase transformation superlattice film 102 and top electrode 101.
Phase transformation superlattice film 102 is formed on hearth electrode 103, is in phase-changing memory unit for storing information
Core.By taking Fig. 1 as an example, 102 structure of phase transformation superlattice film includes the first MxTe1-x1 (a) of layer, it is located at the first MxTe1-xLayer 1
(a) the first Sb onyTe1-y1 (b) of layer, it is located at the first SbyTe1-yThe 2nd M on 1 (b) of layerxTe1-x2 (a) of layer, it is located at second
MxTe1-xThe 2nd Sb on 2 (a) of layeryTe1-yLayer 2 (b) ... and so on, can be repeated cyclically the structure, until meeting needs
The thickness for the phase-change material layers wanted.In the present embodiment, MxTe1-xLayer is Pt0.4Te0.6Layer, with a thickness of 5nm, SbyTe1-yLayer be
Sb0.4Te0.6Layer, with a thickness of 6nm.MxTe1-xLayer and SbyTe1-yThe circulation of layer stacks 10 periods.MxTe1-xLayer and SbyTe1-yLayer
Original state all can be amorphous state or by heat treatment after crystalline state.
The preparation method of the phase-changing memory unit of above-mentioned restricted type structure the following steps are included:
Firstly, providing the growth substrates that a production has hearth electrode 103.Before carrying out subsequent technique, first to the growth
Substrate is cleaned, and can be removed the impurity such as organic matter, metal ion, the oxide on the growth substrates surface, is conducive to mention
The stability of high device.Hearth electrode 103 is tungsten electrode, with a thickness of 100nm.
Then, in the growth substrates surface deposition medium clad 104.The media packs layer is preferably Si3N4。
Then, the media packs layer 104 is etched until in the media packs layer 104 using exposure-etching technics
Form the deposition hole of the exposure hearth electrode 103.
In the present embodiment, for the exposure method that the exposure-etching technics uses for electron beam exposure, lithographic method is anti-
Answer ion etching.The aperture of the deposition hole is equal with the diameter of the hearth electrode 103.The deposition hole can be aperture
100nm aperture below, it is of course also possible to be greater than or equal to the through-hole of 100nm.In the present embodiment, the deposition hole
Aperture is 30-100nm, and specifically, the aperture of the deposition hole is 80nm.There are also another embodiments to be, the deposition hole
Aperture be 20-60nm, specially 50nm.
Finally, phase transformation superlattice film 102 and top electrode 101 are sequentially depositing in the deposition hole, it specifically, will be above-mentioned
The structure of acquisition is sent into magnetron sputtering reaction chamber and carries out physical vapour deposition (PVD), then sputters at shape using the sputtering of two targets or alloys target
At required film layer.
As an example, the sputtering power of Pt target is set 50 watts by the present embodiment, the sputtering power of Te target is set as 15 watts,
Sputter rate is set as 1nm/min, is lower than 1 × 10 to base vacuum-4Pascal opens radio-frequency power supply.Open two target target lids simultaneously
Timing after to be sputtered, closes two target radio-frequency power supplies and target lid, and the single layer compound layer for sputtering formation at this time is Pt0.4Te0.6
Layer, with a thickness of 5nm.Certainly, in other embodiments, Pt can also directly be sputtered0.4Te0.6Alloys target grows Pt0.4Te0.6It is thin
Film.Obtain compound layer Pt0.4Te0.6After layer, single layer phase-change material layers Sb is sputtered on the thin film0.4Te0.6Layer.
As an example, the sputtering power of Sb target is set 35 watts by the present embodiment, the sputtering power of Te target is set as 10 watts,
Sputter rate is set as 2nm/min, is lower than 1 × 10 to base vacuum-4Pascal opens radio-frequency power supply.Open two target target lids simultaneously
Timing after to be sputtered, close two target radio-frequency power supplies and target lid, the single layer phase-change material layers for sputtering formation at this time is
Sb0.4Te0.6Layer, the Sb0.4Te0.6Layer is with a thickness of 6nm.Certainly, in other embodiments, Sb can also directly be sputtered0.4Te0.6
Alloys target grows Sb0.4Te0.6Film.
Repeat single layer Pt made above0.4Te0.6Layer and single layer Sb0.4Te0.6The step of layer, until sputtering shape in deposition hole
At by Pt0.4Te0.6Layer and Sb0.4Te0.6The phase transformation superlattice thin film structures that 10 circulation of layer stack.
The material of the top electrode can be Al, W, TiN or other conductive materials, top electrode described in the present embodiment are
Al material, thickness 100nm.It should be noted that can first be grown on phase transformation superlattice film surface before making top electrode
One layer of TiN adhesive electrodes, for increasing the adhesiveness between top electrode and phase transformation superlattice film.
Please refer to Fig. 3 (GST, i.e. Ge-Sb-Te phase-change storage material system) and Fig. 4 (MT/ST, i.e. MxTe1-xLayer with
SbyTe1-yLayer is alternately stacked the phase-change storage material system to be formed), it is the memory list based on existing GST phase-change material respectively
The electrical operation performance curve of member and phase-changing memory unit of the present embodiment based on phase transformation superlattice thin film structures.By comparison
As can be seen that the external voltage that the phase-changing memory unit of the present embodiment is applied is smaller, phase velocity is faster.
Embodiment 2
A kind of structure of the phase-changing memory unit of T-type structure, as shown in Figure 2: it include growth substrates, hearth electrode 203,
Media packs layer 204, phase transformation superlattice film 202 and top electrode 201.Phase transformation superlattice film 202 includes the first MxTe1-x
1 (a) of layer, it is located at the first MxTe1-xThe first Sb on 1 (a) of layeryTe1-y1 (b) of layer, it is located at the first SbyTe1-ySecond on 1 (b) of layer
MxTe1-x2 (a) of layer, it is located at the 2nd MxTe1-xThe 2nd Sb on 2 (a) of layeryTe1-yLayer 2 (b) ... and so on, can be periodical
The structure is repeated, until in thickness the present embodiment of the phase-change material layers to suit the requirements, MxTe1-xLayer is Ir0.5Te0.5Layer, thickness
For 2nm, SbyTe1-yLayer is Sb0.4Te0.6Layer, with a thickness of 8nm.MxTe1-xLayer and SbyTe1-yThe circulation of layer stacks 8 periods.
MxTe1-xLayer and SbyTe1-yThe original state of layer all can be amorphous state or the crystalline state after heat treatment.
The preparation method of the phase-changing memory unit of the present embodiment the following steps are included:
Firstly, providing the growth substrates that a production has hearth electrode 203.Before carrying out subsequent technique, first to the growth
Substrate is cleaned, and can be removed the impurity such as organic matter, metal ion, the oxide on the growth substrates surface, is conducive to mention
The stability of high device.Hearth electrode 203 is tungsten electrode, with a thickness of 100nm.
The sediment phase change superlattice film 202 in growth substrates then etches the phase transformation using exposure-etching technics
Superlattice film 202 (etch areas and the vertical direction of hearth electrode are staggered), until exposing substrate 203, not with physics partition
With the phase transformation superlattice film 202 at 203 top of hearth electrode.
Then, the deposition medium clad 204 on the phase transformation superlattice film 202 etched, until completely by phase
Become superlattice film 202 to coat completely.The media packs layer 204 of deposition can be SiO2Or Si3N4.It is described in the present embodiment
Media packs layer 204 is preferably Si3N4。
Thereafter, it is straight that the media packs layer 204 covered at the top of super phase transformation lattice film 202 is etched using exposure-etching technics
To exposing at the top of phase transformation superlattice film, deposition hole is formed, top electrode 201 is then deposited on deposition hole.
In the present embodiment, for the exposure method that the exposure-etching technics uses for electron beam exposure, lithographic method is anti-
Answer ion etching.Specifically, the structure of above-mentioned acquisition is sent into magnetron sputtering reaction chamber, then utilizes the sputtering of two targets or alloys target
It sputters to form required film layer.
As an example, the sputtering power of Ir target is set 30 watts by the present embodiment, the sputtering power of Te target is set as 18 watts,
Sputter rate is set as 1.5nm/min, is lower than 1 × 10 to base vacuum-4Pascal opens radio-frequency power supply.Open two target target lids
And timing, after to be sputtered, close two target radio-frequency power supplies and target lid, the single layer compound layer for sputtering formation at this time are
Ir0.5Te0.5Layer, with a thickness of 2nm.Certainly, in other embodiments, Ir can also directly be sputtered0.5Te0.5Alloys target is grown
Ir0.5Te0.5Film.Obtain Ir0.5Te0.5After layer, Sb is sputtered on the thin film0.4Te0.6Layer.
As an example, the sputtering power of Sb target is set 28 watts by the present embodiment, the sputtering power of Te target is set as 8 watts,
Sputter rate is set as 1.5nm/min, is lower than 1 × 10 to base vacuum-4Pascal opens radio-frequency power supply.Open two target target lids
And timing, after to be sputtered, close two target radio-frequency power supplies and target lid, the single layer phase-change material layers for sputtering formation at this time are
Sb0.4Te0.6Layer, the Sb0.4Te0.6Layer is with a thickness of 8nm.Certainly, in other embodiments, Sb can also directly be sputtered0.4Te0.6
Alloys target grows Sb0.4Te0.6Film.
Repeat single layer Ir made above0.5Te0.5Layer and single layer Sb0.4Te0.6The step of layer, until sputtering shape in deposition hole
At 8 by Ir0.5Te0.5Layer and Sb0.4Te0.6The phase transformation superlattice thin film structures that layer circulation stacks.
The material of the top electrode 201 can be Al, W, TiN or other conductive materials, and electricity is pushed up described in the present embodiment
Pole 201 is Al material, with a thickness of 100nm.It should be noted that before making top electrode, it can be first super brilliant in the phase transformation
Lattice film surface grows one layer of TiN adhesive electrodes, for increasing the adhesiveness between top electrode and phase transformation superlattice film.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of phase transformation superlattice film, which is characterized in that including phase-change material layers and for being provided for the phase-change material layers
Crystallize the compound layer of template；Wherein, the compound of the compound layer has identical with the compound of the phase-change material layers
Crystallographic system, and lattice constant a is not much different in 40%.
2. phase transformation superlattice film as described in claim 1, which is characterized in that the compound layer is MxTe1-xLayer, the phase
Change material layer is SbyTe1-yLayer；Wherein, any one of M in Mn, Ni, Zn, Zr, Mo, Rh, Pd, Cd, Ir, Pt, 0 < x
1,0 < y < 1 of <.
3. phase transformation superlattice film as claimed in claim 2, which is characterized in that 0.32≤x≤0.67,0.39≤y≤0.81.
4. phase transformation superlattice film as described in claim 1, which is characterized in that the phase-change material layers with a thickness of 1-
10nm；And/or
The compound layer with a thickness of 1-10nm.
5. phase transformation superlattice film according to any one of claims 1-4, which is characterized in that the phase transformation superlattice film packet
The N layers of compound layer and the N layers of phase-change material layers are included, and the compound layer and the phase-change material layers are arranged alternately；
Wherein, 3≤N≤25.
6. a kind of phase-changing memory unit, which is characterized in that including described in hearth electrode, top electrode and claim any one of 1-5
Phase transformation superlattice film, the phase transformation superlattice film is arranged between the hearth electrode and the top electrode.
7. phase-changing memory unit as claimed in claim 6, which is characterized in that the phase-changing memory unit further includes substrate
With media packs layer, over the substrate, the media packs layer is coated on the hearth electrode, phase transformation surpasses for the hearth electrode setting
The periphery of lattice film and top electrode；And/or
The phase-changing memory unit is restricted type structural phase-change memory unit or T-type structure phase-changing memory unit；And/or
Any one of the material of the hearth electrode in Al, W and TiN；And/or
Any one of the material of the top electrode in Al, W and TiN.
8. a kind of preparation method of phase-changing memory unit, which comprises the steps of:
Substrate is provided, is prepared with hearth electrode on the substrate；
Deposition covers the media pack of the hearth electrode over the substrate, in the vertical direction in the hearth electrode region
The deposition hole that the media pack obtains exposing the hearth electrode is etched, the media pack after etching forms packet
Coating；
Phase transformation superlattice film and top electrode are sequentially depositing in the deposition hole；Wherein, the phase transformation superlattice film includes
Phase-change material layers and for for the phase-change material layers provide crystallization template compound layer；Wherein, the change of the compound layer
The compound crystallographic system having the same of object and the phase-change material layers is closed, and lattice constant a is not much different in 40%.
9. preparation method as claimed in claim 8, which is characterized in that the compound layer is MxTe1-xLayer, the phase-change material
Layer is SbyTe1-yLayer；Wherein, any one of M in Mn, Ni, Zn, Zr, Mo, Rh, Pd, Cd, Ir, Pt, 0 < x <, 1,0 <
Y < 1.
10. phase transformation superlattice film as claimed in claim 8 or 9, which is characterized in that the phase-change material layers with a thickness of 1-
10nm；And/or
The compound layer with a thickness of 1-10nm；And/or
Phase change region with a thickness of 6-500nm in the phase transformation superlattice film；And/or
Any one of the hearth electrode in Al, W and TiN；And/or
Any one of the top electrode in Al, W and TiN；And/or
The media pack is selected from SiO2Or Si3N4；And/or
The phase transformation superlattice film includes the N layers of compound layer and the N layers of phase-change material layers, and the compound layer and
The phase-change material layers are arranged alternately；Wherein, 3≤N≤25.
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Application publication date: 20181211 |