CN108987247A - The preparation method of polysilicon membrane - Google Patents
The preparation method of polysilicon membrane Download PDFInfo
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- CN108987247A CN108987247A CN201710402194.1A CN201710402194A CN108987247A CN 108987247 A CN108987247 A CN 108987247A CN 201710402194 A CN201710402194 A CN 201710402194A CN 108987247 A CN108987247 A CN 108987247A
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- Prior art keywords
- preparation
- film
- polysilicon
- polysilicon membrane
- temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Abstract
The invention discloses a kind of preparation method of polysilicon membrane, the preparation method the following steps are included: Step 1: using silane gas as raw material, with LPCVD method under the conditions of 500 to 600 DEG C deposition of hydrogenated amorphous silicon thin film；Step 2: the hydrogenation non crystal silicon film is made its fusing at a high temperature of 600 DEG C or more；Step 3: being made annealing treatment, the a-Si:H film of fusing is made nucleus occur under conditions of temperature reduces, as the silicon of the reduction melting of temperature continues crystallization on nucleus and crystal grain increase is made to be converted into polysilicon membrane.Preparation method of the invention can prepare the film of large area, and crystallite dimension is greater than the polysilicon of Direct precipitation.Doping in situ can be carried out, at low cost, simple process is easily formed production line.
Description
Technical field
The present invention relates to field of polysilicon technology, and in particular to a kind of preparation method of polysilicon membrane.
Background technique
Polysilicon is a kind of form of elemental silicon.When the elemental silicon of melting solidifies under the conditions of supercooling, silicon atom is with Buddha's warrior attendant
Stone lattice morphologic arrangement grows up to the different crystal grain of high preferred orientation at many nucleus, such as these nucleus, then these crystal grain combine,
Just crystallize into polysilicon.Utility value: it can be seen that its development trend is monocrystalline from the development process of current international solar cell
Silicon, polysilicon, band-like silicon, thin-film material (including microcrystalline silicon film, compound base film and dye film).Polysilicon
(polycrystalline silicon) has grey metal gloss, 2.32 ~ 2.34g/cm3 of density.1410 DEG C of fusing point.Boiling point
2355℃.It is dissolved in the nitration mixture of hydrofluoric acid and nitric acid, not soluble in water, nitric acid and hydrochloric acid.Hardness is between germanium and quartz, room temperature
Lower matter is crisp, the easy fragmentation of when cutting.Being heated to 800 DEG C or more has ductility, and 1300 DEG C of whens show obvious deformation.It does not live under room temperature
It sprinkles, is reacted under high temperature with oxygen, nitrogen, sulphur etc..Under high temperature fused state, there is biggish chemical activity, it can be with substantially any material
Material effect.It is particularly important defect semiconductor material with semiconductor property, but micro impurity can largely effect on it and lead
Electrically.Manufacture transistor radio, recorder, refrigerator, colour TV, video recorder, electronic computer are widely used in electronics industry
Deng basic material.By dry silicon powder and dry hydrogen chloride gas chlorination under certain condition, then through condensation, rectifying, reduction and
?.Polysilicon can make the raw material of drawn monocrystalline silicon, in terms of the difference of polysilicon and monocrystalline silicon is mainly manifested in physical property.Example
Such as, in terms of the anisotropy of mechanical property, optical property and thermal property, it is obvious to can not show a candle to monocrystalline silicon；In electrical properties side
Face, it is significant that the electric conductivity of polysilicon crystal also can not show a candle to monocrystalline silicon, even almost without electric conductivity.In terms of chemical activity,
The difference of the two is minimum.Polysilicon and monocrystalline silicon can be distinguished from the appearance, but really crystalline substance must be determined by analysis in identification
Crystal plane direction, conduction type and resistivity of body etc..Polysilicon be produce monocrystalline silicon direct material, be contemporary artificial intelligence,
The electronics and information infrastructure material of the semiconductor devices such as automatic control, information processing, photoelectric conversion.
The production technology of polysilicon is mainly improved Siemens and silane thermal decomposition process.Siemens Method is by way of vapor deposition
Column of polysilicon is produced, in order to improve raw material availability and environmental-friendly, closed loop is used on the basis of the former and produces work
Skill, that is, improved Siemens.The technique reacts industrial silica fume with HCl, is processed into SiHCl3 , then allow SiHCl3In H2Atmosphere
Reduction deposition obtains polysilicon in reduction furnace.The tail gas H of reduction furnace discharge2、SiHCl3、SiCl4、SiH2Cl2 With HCl through excessive
From rear recycling.Silane thermal decomposition process is passed through silane in using polycrystalline silicon seed as the fluidized bed of fluidized particles, and silane is split
It solves and is deposited on crystal seed, to obtain granulated polycrystalline silicon.Improved Siemens and silane thermal decomposition process mainly produce electron level crystal
Silicon can also produce solar-grade polysilicon.Polysilicon membrane preparation method complex process in the prior art, to process equipment
It is required that it is high, it is difficult to realize effective production line.
Summary of the invention
The present invention overcomes the deficiencies in the prior art, provide a kind of preparation method of polysilicon membrane.
In order to solve the above technical problems, the invention adopts the following technical scheme:
A kind of preparation method of polysilicon membrane, the preparation method the following steps are included:
Step 1: with LPCVD method, deposition of hydrogenated amorphous silicon is thin under the conditions of 500 to 600 DEG C using silane gas as raw material
Film；
Step 2: the hydrogenation non crystal silicon film is made its fusing at a high temperature of 600 DEG C or more；
Step 3: being made annealing treatment, the a-Si:H film of fusing is made nucleus occur under conditions of temperature reduces, with
The silicon of the reduction melting of temperature continues crystallization on nucleus and crystal grain increase is made to be converted into polysilicon membrane.
Further technical solution is the annealing temperature that makes annealing treatment in the step three in 700 DEG C or less ranges
It is interior.
Further technical solution is that the annealing time made annealing treatment in the step three is greater than 10 hours.
Compared with prior art, the beneficial effects of the present invention are: preparation method of the invention can prepare the film of large area,
Crystallite dimension is greater than the polysilicon of Direct precipitation.Doping in situ can be carried out, at low cost, simple process is easily formed production line.
Specific embodiment
Below with reference to embodiment, the present invention is further elaborated.
According to one embodiment of present invention, the present embodiment discloses a kind of polysilicon membrane preparation method, specifically, this reality
Applying polysilicon membrane preparation method described in example is the polysilicon membrane preparation method realized based on solid phase crystallization method, described solid
Phase crystallization refers to that the temperature of crystallization occurs for amorphous solid lower than the temperature crystallized after its melting.This is a kind of generation polysilicon indirectly
Method.
Specifically, embodiment polysilicon membrane preparation method mainly comprises the steps that
First using silane gas as raw material, with LPCVD method in 550 DEG C or so deposition a-Si:H(amorphous silicon hydrides) film,
Then film is made into its fusing at a high temperature of 600 DEG C or more, then occurs nucleus when temperature is slightly lower, with the drop of temperature
The silicon of low melt continues crystallization on nucleus and crystal grain increase is made to be converted into polysilicon membrane.Wherein, the crystal grain of polysilicon membrane
Size depends on the thickness and crystallization temperature of film.
As preferred embodiment, annealing temperature is an important factor for influencing crystal effect, in 700 DEG C of annealing below
In temperature range, temperature is lower, and nucleation rate is lower, and the getable crystallite dimension of institute is bigger when annealing time is equal；And 700
DEG C or more, due to the mobile mutual annexation for causing crystal grain of crystal boundary at this time, so that crystallite dimension is with temperature in this temperature range
Raising and increase.Through a large number of studies show that, using polysilicon grain size made from this method also with initial film sample
Unordered degree is closely related, and influence of the T.Aoyama et al. to the sedimentary condition of original material to solid phase crystallization is studied,
It was found that original material is more unordered, nucleation rate is lower during solid phase crystallization, and crystallite dimension is bigger.Due to brilliant in crystallization process
The formation of core be it is spontaneous, therefore, the high preferred orientation of SPC polysilicon membrane crystal grain is random.Neighboring die high preferred orientation is not
With higher potential barrier will be formed, need to carry out performance of the hydrogenation treatment to improve SPC polysilicon.The advantages of this technology is to make
The film of standby large area, crystallite dimension are greater than the polysilicon of Direct precipitation.It can carry out doping in situ, at low cost, simple process,
It is easily formed production line.Since SPC is crystallized under amorphous silicon melting temperature, belong to high temperature crystallization process, temperature is higher than 600
DEG C, it usually needs 1100 DEG C or so, annealing time is up to 10 more than hour, it is preferred that select base material using quartz or
Monocrystalline silicon, for making small size device, such as liquid crystal light valve, camera viewfmder.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (3)
1. a kind of preparation method of polysilicon membrane, it is characterised in that: the preparation method the following steps are included:
Step 1: with LPCVD method, deposition of hydrogenated amorphous silicon is thin under the conditions of 500 to 600 DEG C using silane gas as raw material
Film；
Step 2: the hydrogenation non crystal silicon film is made its fusing at a high temperature of 600 DEG C or more；
Step 3: being made annealing treatment, the a-Si:H film of fusing is made nucleus occur under conditions of temperature reduces, with
The silicon of the reduction melting of temperature continues crystallization on nucleus and crystal grain increase is made to be converted into polysilicon membrane.
2. the preparation method of polysilicon membrane according to claim 1, it is characterised in that in the step three at annealing
The annealing temperature of reason is in 700 DEG C or less ranges.
3. the preparation method of polysilicon membrane according to claim 1, it is characterised in that in the step three at annealing
The annealing time of reason is greater than 10 hours.
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| CN201710402194.1A CN108987247A (en) | 2017-06-01 | 2017-06-01 | The preparation method of polysilicon membrane |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020197742A1 (en) * | 2001-06-25 | 2002-12-26 | Kamins Theodore I. | Method of forming smooth polycrystalline silicon electrodes for molecular eletronic devices |
| CN1869798A (en) * | 2005-05-27 | 2006-11-29 | 三星电子株式会社 | Liquid crystal display and method of manufacturing of a tft array panel of the same |
| US20080003751A1 (en) * | 2006-06-29 | 2008-01-03 | Hynix Semiconductor Inc. | Methods for forming dual poly gate of semiconductor device |
| CN101515544A (en) * | 2008-02-22 | 2009-08-26 | 中芯国际集成电路制造(上海)有限公司 | Growing method of polysilicon gate |
| CN103928341A (en) * | 2014-04-21 | 2014-07-16 | 上海和辉光电有限公司 | Polycrystalline silicon manufacturing method capable of improving crystalline grain size |
-
2017
- 2017-06-01 CN CN201710402194.1A patent/CN108987247A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020197742A1 (en) * | 2001-06-25 | 2002-12-26 | Kamins Theodore I. | Method of forming smooth polycrystalline silicon electrodes for molecular eletronic devices |
| CN1869798A (en) * | 2005-05-27 | 2006-11-29 | 三星电子株式会社 | Liquid crystal display and method of manufacturing of a tft array panel of the same |
| US20080003751A1 (en) * | 2006-06-29 | 2008-01-03 | Hynix Semiconductor Inc. | Methods for forming dual poly gate of semiconductor device |
| CN101515544A (en) * | 2008-02-22 | 2009-08-26 | 中芯国际集成电路制造(上海)有限公司 | Growing method of polysilicon gate |
| CN103928341A (en) * | 2014-04-21 | 2014-07-16 | 上海和辉光电有限公司 | Polycrystalline silicon manufacturing method capable of improving crystalline grain size |
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Application publication date: 20181211 |