CN108963006A - 一种太阳能电池及其制备方法和基于其的电池片及光伏组件 - Google Patents
一种太阳能电池及其制备方法和基于其的电池片及光伏组件 Download PDFInfo
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Abstract
本发明公开一种太阳能电池及其制备方法和基于其的电池片及光伏组件,太阳能电池的硅基体上的发射极设置为若干个独立的发射极,相邻的发射极的边缘之间具有预设的间距;阳能电池的正面电极图形和背面电极图形均设置为若干独立的电极图形,每个发射极上下各对应一处独立的正面电极图形和背面电极图形。本发明的太阳能电池切片时,沿相邻的发射极的边缘之间的部分对太阳能电池进行切割,能够避免太阳能电池在切片过程对pn结造成破坏,造成太阳能电池的性能衰减,以及切片后电极残余浆料和切片过程中的金属粉末污染切口,导致边缘漏电和短路;使得切口的应力较小,减少切片过程中应力释放导致的电池片碎片或隐裂,提高了切片良率和组件可靠性。
Description
技术领域
本发明属于晶硅太阳能电池技术领域,特别涉及一种太阳能电池及其制备方法和基于其的电池片及光伏组件。
背景技术
太阳能电池是一种利用光生伏特效应将光能直接转化为电能的光电器件。根据制造太阳能电池的基体材料通常可分为硅基太阳能电池、化合物太阳能电池、薄膜太阳能电池、有机太阳能电池、纳米太阳能电池等。目前硅基太阳能电池技术最成熟,已被规模化商业生产,占据太阳能电池市场的85%以上份额。
一般晶硅太阳能电池由硅基体、发射极、发射极表面陷光结构、发射极表面钝化减反结构、硅基体背面钝化结构、正面电极和背面电极等组成。正面电极一般包含相互垂直的主栅和副栅,主栅和副栅主要由含有银的浆料印刷烧结形成。背面电极一般包含与正面主栅相对应的背银电极和背铝,背银电极浆料的主要成分为银;背面电极上除背银电极以外的部分被含有铝的浆料覆盖,形成背铝。正电极图案和背电极图案一般与硅片边缘保持0.5~1.0mm左右的空白区域。为了减少银浆耗量,主栅一般做成分段或者镂空样式。
现有技术一的技术方案:
用于制备半片组件或叠瓦组件的小电池片单元是由完整的电池片切割而成,其切片方式包括激光切割,机械切割,或是先用激光切割再用机械裂片方式。被切割的完整电池片的制备工艺与常规组件采用的电池片的制备工艺完全一致。整个电池片属于一个电池单元。正、背电极图案也与常规组件一致,即正面电极主栅保持连续,背面铝背场也保持连续、完整。
现有技术二的方案:
用于制备半片组件或叠瓦组件的小电池片单元是由完整的电池片切割而成,其切片方式包括激光切割,机械切割,或是先用激光切割再用机械裂片方式。被切割的完整电池片的制备工艺与常规组件采用的电池片的制备工艺完全一致。整个电池片属于一个电池单元。与现有技术一不同的是,现有技术二在正、背电极设计做了更改,即正面主栅在切片位置保持断开,相应的,背面对应位置保持镂空,未用铝浆覆盖。
现有技术一、二存在以下缺点:
现有技术一制成的切片电池,电池背面全部有铝浆覆盖,在高温烧结过程中,铝和硅发生共熔,在稍后的冷却过程中,由于铝的热膨胀系数高于硅,因而在电池片内部形成应力,导致电池片翘曲。在切片过程中,断口位置发生应力释放,因切割造成的损伤会随着应力释放而生长,进而延伸至电池内部。因此,根据现有技术一制成的切片电池,在后续的切片和封装过程中容易发生碎片和隐裂。而且,现有技术一切片过程中,断口易被正面银粉和背面铝粉污染,轻则造成边缘漏电,重则导致电极短路,进而导致功率输出下降。
现有技术二避免了正面银粉和背面铝粉对断口处的污染。而且切片位置没有被铝浆覆盖,也减小了切割过程中应力的释放所导致的碎片率和隐裂率。但是现有技术一和现有技术二所采用的切片电池均属于完整的单一电池单元,即现有技术一和现有技术二所采用的切片电池均只含有一个pn结。在切割过程中,原有完整的pn结被切割成若干个pn结单元,而pn结是太阳能电池的核心结构,一旦被破坏势必会造成器件性能的衰减,因此现有技术一和现有技术二仍会导致切片电池的功率输出发生衰减,且良率较低。
发明内容
为解决现有技术中存在的问题,本发明的目的在于提供一种太阳能电池。
一种太阳能电池,所述太阳能电池的硅基体上的发射极设置为若干个独立的发射极,相邻的发射极的边缘之间具有预设的间距;
所述太阳能电池的正面电极图形设置为若干独立的正面电极图形,每个发射极对应一处独立的正面电极图形;
所述太阳能电池的背面电极图形设置为若干独立的背面电极图形,每个发射极对应一处独立的背面电极图形。
优选的,相邻的发射极的边缘之间的间距为0.5毫米至4毫米。优选的,所述正面电极图形包含主栅以及与主栅相连的副栅,所述背面电极图形包含背面铝浆区域和背银电极。
优选的,所述太阳能电池的正面电极图在无pn结区域隔开,背面电极图形在无pn结区域隔开。
优选的,所述太阳能电池的无pn结区域方向与主栅方向垂直或平行。
优选的,所述太阳能电池为单晶硅太阳能电池或多晶硅太阳能电池。
本发明的目的还在于提供一种电池片。
一种电池片,所述电池片由上述太阳能电池沿相邻的发射极的边缘之间的区域切割而成。
本发明的目的还在于提供一种光伏组件。
一种光伏组件,所述光伏组件的太阳能电池由上述电池片制成。
优选的,所述光伏组件为半片组件或叠瓦组件。
本发明的目的还在于提供一种太阳能电池的制备方法。
一种太阳能电池的制备方法,其过程如下:
在具有绒面陷光结构的硅基体的一个表面制备若干个独立的发射极,相邻的发射极的边缘之间具有预设的间距;
在制备有发射极的硅基体表面制备钝化层;
再制备电极图形,制备电极图形时,在钝化层的表面上与每个发射极对应的区域制备独立的正面电极图形;在硅基体的另一个表面上与每个发射极对应的区域制备独立的背面电极图形。
优选的,制备发射极时,采用高温扩散或离子注入的方式制备。
与现有技术相比,本发明具有如下有益效果:
本发明的太阳能电池将发射极设置为若干个独立的发射极,相邻的发射极的边缘之间具有预设的间距,当该太阳能电池切片时,沿相邻的发射极的边缘之间的部分对太阳能电池进行切割,能够避免太阳能电池在切片过程对pn结造成破坏,进而避免了因pn结的破坏而造成太阳能电池的性能衰减;又由于阳能电池的正面电极图形设置为若干独立的正面电极图形,每个发射极对应一处独立的正面电极图形,太阳能电池的背面电极图形设置为若干独立的背面电极图形,每个发射极对应一处独立的背面电极图形,因此也避免了切片后电极残余浆料和切片过程中的金属粉末污染切口导致的边缘漏电和短路的风险;也使得切口的应力较小,减少了切片过程中应力释放导致的电池片碎片或隐裂,提高了切片良率和组件可靠性。
本发明的电池片由本发明太阳能电池沿相邻的发射极的边缘之间的区域切割而成,因此该电池片的pn结完整,未造成破坏,能够避免因pn结的破坏而造成太阳能电池片功率输出发生衰减。
本发明的光伏组件的太阳能电池由本发明的电池片制成,由本发明的电池片的有益效果可知,本发明的太阳能组件可靠性高,功率输出相对于现有光伏组件较高。
由本发明太阳能电池的有益效果可知,本发明制备方法制备的太阳能电池在切割时,能够避免太对pn结造成破坏,进而避免了因pn结的破坏而造成太阳能电池的性能衰减;同时也能够避免切片后电极残余浆料和切片过程中的金属粉末污染切口导致的边缘漏电和短路的风险;也使得切口的应力较小,减少了切片过程中应力释放导致的电池片碎片或隐裂,提高了切片良率和组件可靠性。
附图说明
图1现有太阳能电池结构剖面图;
图2本发明实施例制备的半片切片电池结构剖面图;
图3本发明实施例制备的半片切片电池正面电极图案(切口位置垂直正面主栅);
图4本发明实施例制备的半片切片电池背面电极图案(切口位置垂直正面主栅);
图5本发明实施例制备的半片切片电池正面电极图案(切口位置平行正面主栅);
图6本发明实施例制备的半片切片电池背面电极图案(切口位置平行正面主栅);
图7本发明实施例制备的五分之一片切片电池结构的剖面图;
图8本发明实施例制备五分之一片切片电池过程中正面掩膜层示意图。
其中1-钝化层,2-发射极,3-硅基体,4-铝背表面,5-切口位置,6-硅片边缘,7-正面电极副栅,8-正面电极主栅,9-正面电极图形边框,11-背面铝浆覆盖边缘,12-铝浆覆盖区,13-背面银电极,14-掩膜层。
具体实施方式
下面结合附图和实施例来对本发明作进一步的说明。
参照图2和图7,本发明太阳能电池的硅基体3上的发射极设置为若干个独立的发射极2,相邻的发射极2的边缘之间具有预设的间距;
再参照图3和图5,太阳能电池的正面电极图形设置为若干独立的正面电极图形,每个发射极2对应一处独立的正面电极图形,独立的正面电极图形为完整的正面电极图形;
再参照图4和图6,太阳能电池的背面电极图形设置为若干独立的背面电极图形,每个发射极2对应一处独立的背面电极图形,独立的背面电极图形为完整的背面电极图形。
作为本发明优选的实施方案,相邻的正面电极图形之间具有无图案区域,该无图案区域为太阳能电池的无pn结区在太阳能电池正面对应的区域(即太阳能电池的正面电极图在无pn结区域隔开),该无图案区域作为太阳能电池正面的切口位置5;
相邻的背面电极图形之间具有无图案区域,该无图案区域为太阳能电池的无pn结区在太阳能电池背面对应的区域(即背面电极图形在无pn结区域隔开),该无图案区域作为太阳能电池背面的切口位置5。
作为本发明优选的实施方案,相邻的发射极2的边缘之间的间距为0.5毫米至4毫米,相邻的正面电极图形之间的无图案区域以及相邻的背面电极图形之间的无图案区域的宽度均为0.5毫米至4毫米。
参照图3和图5,作为本发明优选的实施方案,正面电极图形包含主栅以及与主栅相连的副栅,背面电极图形包含背面铝浆区域和背银电极。
参照图3和图4,作为本发明优选的实施方案,太阳能电池的pn结断开方向与主栅方向垂直。
参照图5和图6,作为本发明优选的实施方案,太阳能电池的pn结断开方向与主栅方向平行。
参照图2~图8,本发明太阳能电池可根据组件设计要求,在单一硅基体3上制成2个、3个、4个、5个或6个等若干电池单元,太阳能可被相应的切成2个、3个、4个、5个或6个等若干电池片。
作为本发明优选的实施方案,太阳能电池为单晶硅太阳能电池或多晶硅太阳能电池。
本发明提供的电池片,由上述太阳能电池沿相邻的发射极的边缘之间的区域切割而成。
本发明提供的光伏组件的太阳能电池由上述电池片制成。
作为本发明优选的实施方案,所述光伏组件为半片组件或叠瓦组件。
本发明提供的太阳能电池的制备方法,其过程如下:
在具有绒面陷光结构的硅基体3的一个表面制备若干个独立的发射极2,相邻的发射极2的边缘之间具有预设的间距;
在制备有发射极2的硅基体表面制备钝化层1;
再制备电极图形,制备电极图形时,在钝化层1的表面上与每个发射极2对应的区域制备独立的正面电极图形;在硅基体3的另一个表面上与每个发射极2对应的区域制备独立的背面电极图形。
作为本发明优选的实施方案,硅基体3通过化学腐蚀方法形成绒面陷光结构。
作为本发明优选的实施方案,通过丝网印刷的方式制备电极图形。
作为本发明优选的实施方案,通过电镀的方式制备电极图形。
作为本发明优选的实施方案,通过喷墨打印的方式制备电极图形。
作为本发明优选的实施方案,制备发射极2时,采用高温扩散的方式制备。
作为本发明优选的实施方案,制备发射极2时,采用离子注入的方式制备。
本发明制备发射极2,形成时pn结时,不限于高温扩散和离子注入这两种制备方式。
实施例1
本实施例制备太阳能电池的程如下:
(1)制绒:将M2尺寸的P型单晶硅片置于氢氧化钾碱液中进行各向异性腐蚀,形成金字塔陷光结构;
(2)扩散:将制绒后的P型单晶硅片置于管式扩散炉中,并在POCl3气体氛围中进行高温扩散,扩散完成后,将形成完整的pn结;
(3)刻蚀:将扩散后的P型单晶硅片表面涂覆一层石蜡,并在P型单晶硅片中间留下宽约4mm的空白无石蜡区,将涂覆石蜡的P型单晶硅片置于链式清洗槽中进行刻蚀,去除扩散过程中形成的边结和背结以及表面无石蜡区的pn结;
(4)清洗:将刻蚀后涂覆有石蜡的P型单晶硅片置于水剂石蜡清洗液中进行清洗,去除表面石蜡覆盖层,并将表面含磷二氧化硅层(PSG)去除;
(5)PECVD镀膜:将刻蚀完的硅片置于管式炉中,对具有pn结的一面进行镀膜,形成钝化膜1;
(6)金属化:正面电极网版图形按图3设计,背面电极网板图形按图4设计。经丝网印刷和高温烧结后便形成二分之一片切片电池,电池结构剖的剖面如图2所示。
实施例2
本实施例制备太阳能电池的程如下:
(1)制绒:将M2尺寸的P型单晶硅片置于氢氧化钠碱液中进行各向异性腐蚀,形成金字塔陷光结构;
(2)扩散:将制绒后的P型单晶硅片置于管式扩散炉中,并在POCl3气体氛围中进行高温扩散,扩散完成后,将形成完整的pn结;
(3)刻蚀:将扩散后的P型单晶硅片表面涂覆一层石蜡,并在P型单晶硅片中间留下宽约4mm的空白无石蜡区,将涂覆石蜡的P型单晶硅片置于链式清洗槽中进行刻蚀,去除扩散过程中形成的边结和背结以及表面无石蜡区的pn结;
(4)清洗:将刻蚀后涂覆有石蜡的P型单晶硅片置于水剂石蜡清洗液中进行清洗,去除表面石蜡覆盖层,并将表面含磷二氧化硅层(PSG)去除;
(5)PECVD镀膜:将刻蚀完的硅片置于板式炉中进行镀膜,对具有pn结的一面进行镀膜,形成钝化膜1;
(6)金属化:正面电极网版图形按图5设计,背面电极网板图形按图6设计。经丝网印刷和高温烧结后便形成二分之一片切片电池,电池结构的剖面如图2所示。
作为本发明优选的实施方案,在实施例1和实施例2中,在高温扩散制备pn结过程中通过氧化硅作为掩膜层,在单个硅基体上形成两个完整的相互独立的pn单元。
实施例3:
(1)制绒:将M2尺寸P型单晶硅片置于氢氧化钾碱液中进行各向异性腐蚀,形成金字塔陷光结构;
(2)扩散:将制绒后的P型单晶硅片置于管式扩散炉中,并在POCl3气体氛围中进行高温扩散。扩散完成后,将形成完整的pn结;
(3)激光去除pn结:采用激光将硅片中间宽约4mm的pn结去除,使得扩散后完整的单个pn结变成两个小pn结;
(4)刻蚀:将激光去结后的P型单晶硅片置于链式清洗槽中进行刻蚀,去除扩散过程中形成的边结和背结以及表面的PSG;
(5)PECVD镀膜:将刻蚀完的硅片置于板式炉中进行镀膜,对具有pn结的一面进行镀膜,形成钝化膜1;
(6)金属化:正面电极网版图形按图5设计,背面电极网板图形按图6设计。经丝网印刷和高温烧结后便形成二分之一片切片电池,电池结构的剖面如图2所示。
实施例4:
(1)制绒:将M2尺寸P型单晶硅片置于氢氧化钠碱液中进行各向异性腐蚀,形成金字塔陷光结构;
(2)扩散:将制绒后的P型单晶硅片置于管式扩散炉中,并在POCl3气体氛围中进行高温扩散,散完成后,将形成完整的pn结;
(3)激光去除pn结:采用激光将P型单晶硅片中间宽约4mm的pn结去除,使得扩散后完整的单个pn结变成两个小pn结;
(4)刻蚀:将激光去结后的P型单晶硅片置于链式清洗槽中进行刻蚀,去除扩散过程中形成的边结和背结以及表面的PSG;
(5)PECVD镀膜:将刻蚀完的硅片置于板式炉中进行镀膜,对具有pn结的一面进行镀膜,形成钝化膜1;
(6)金属化:正面电极网版图形按图3设计,背面电极网板图形按图4设计。经丝网印刷和高温烧结后便形成二分之一片切片电池,电池结构的剖面如图2所示。
实施例5:
(1)制绒:将M2尺寸P型单晶硅片置于氢氧化钾碱液中进行各向异性腐蚀,形成金字塔陷光结构;
(2)离子注入:将制绒后的P型单晶硅片置于离子注入机中进行离子注入,离子注入时,P型单晶硅片中间用一块宽约4毫米的石墨板进行遮挡,注入完成后,将形成从P型单晶硅片中间分开的两个独立的pn结,如图2所示;
(3)刻蚀:将清洗干净的扩散后P型单晶硅片置于链式清洗槽中进行刻蚀,去除扩散过程中形成的边结和背结以及表面的PSG;
(4)PECVD镀膜:将刻蚀完的硅片置于管式炉中进行镀膜,对具有pn结的一面进行镀膜,形成钝化膜1;
(5)金属化:正面电极网版图形按图3设计,背面电极网板图形按图4设计。经丝网印刷和高温烧结后便形成二分之一片切片电池,电池结构的剖面如图2所示。
实施例6:
(1)制绒:将M2尺寸P型单晶硅片置于氢氧化钠碱液中进行各向异性腐蚀,形成金字塔陷光结构;
(2)离子注入:将制绒后的P型单晶硅片置于离子注入机中进行离子注入,离子注入时,P型单晶硅片中间用一块宽约4毫米的石墨板进行遮挡,注入完成后,将形成从P型单晶硅片中间分开的两个独立的pn结,如图2所示;
(3)刻蚀:将清洗干净的扩散后P型单晶硅片置于链式清洗槽中进行刻蚀,去除扩散过程中形成的边结和背结以及表面的PSG;
(4)PECVD镀膜:将刻蚀完的硅片置于板式炉中进行镀膜,对具有pn结的一面进行镀膜,形成钝化膜1;
(5)金属化:正面电极网版图形按图5设计,背面电极网板图形按图6设计。经丝网印刷和高温烧结后便形成二分之一片切片电池,电池结构的剖面如图2所示。
实施例7:
(1)制绒:将M2尺寸P型单晶硅片置于氢氧化钾碱液中进行各向异性腐蚀,形成金字塔陷光结构;
(2)离子注入:将制绒后的P型单晶硅片置于离子注入机中进行离子注入,离子注入时,如图8所示,在P型单晶硅片表面用石墨板作为掩膜层,注入完成后,将形成以掩膜层为分界线的5个独立的pn结,如图7所示;
(3)刻蚀:将清洗干净的扩散后P型单晶硅片置于链式清洗槽中进行刻蚀,去除扩散过程中形成的边结和背结以及表面的PSG;
(4)PECVD镀膜:将刻蚀完的硅片置于管式炉中进行镀膜,对具有pn结的一面进行镀膜,形成钝化膜1;
(5)金属化:电极版图采用5根主栅设计。与实施例1~实施例6类似,在pn结断开处,无正面电极以及背面铝浆覆盖。最后经丝网印刷和高温烧结后便形成五分之一片切片电池,电池结构的剖面如图7所示。
实施例8:
(1)制绒:将M2尺寸P型单晶硅片置于氢氧化钠碱液中进行各向异性腐蚀,形成金字塔陷光结构;
(2)离子注入:将制绒后的P型单晶硅片置于离子注入机中进行离子注入,离子注入时,如图8所示,在P型单晶硅片表面用石墨板作为掩膜层,注入完成后,将形成以掩膜层为分界线的5个独立的pn结,如图7所示;
(3)刻蚀:将清洗干净的扩散后硅片置于链式清洗槽中进行刻蚀,去除扩散过程中形成的边结和背结以及表面的PSG;
(4)PECVD镀膜:将刻蚀完的硅片置于板式炉中进行镀膜,对具有pn结的一面进行镀膜,形成钝化膜1;
(5)金属化:电极版图采用5根主栅设计。与实施例1~实施例6类似,在pn结断开处,无正面电极以及背面铝浆覆盖。最后经丝网印刷和高温烧结后便形成五分之一片切片电池,电池结构的剖面如图7所示。
Claims (10)
1.一种太阳能电池,其特征在于,所述太阳能电池的硅基体(3)上的发射极设置为若干个独立的发射极(2),相邻的发射极(2)的边缘之间具有预设的间距;
所述太阳能电池的正面电极图形设置为若干独立的正面电极图形,每个发射极(2)对应一处独立的正面电极图形;
所述太阳能电池的背面电极图形设置为若干独立的背面电极图形,每个发射极(2)对应一处独立的背面电极图形。
2.根据权利要求1所述的太阳能电池,其特征在于,相邻的发射极(2)的边缘之间的间距为0.5毫米至4毫米。
3.根据权利要求1所述的太阳能电池,其特征在于,所述太阳能电池的正面电极图在无pn结区域隔开,背面电极图形在无pn结区域隔开。
4.根据权利要求1所述的太阳能电池,其特征在于,所述太阳能电池的无pn结区域方向与主栅方向垂直或平行。
5.根据权利要求1所述的太阳能电池,其特征在于,所述太阳能电池为单晶硅太阳能电池或多晶硅太阳能电池。
6.一种电池片,其特征在于,所述电池片为由权利要求1-5任意一项所述的太阳能电池沿相邻的发射极的边缘之间的区域切割而成的单片结构。
7.一种光伏组件,其特征在于,所述光伏组件的太阳能电池为由权利要求6所述的电池片制成的叠片电池。
8.根据权利要求7所述的光伏组件,其特征在于,所述光伏组件为半片组件或叠瓦组件。
9.一种太阳能电池的制备方法,其特征在于,制备过程如下:
在具有绒面陷光结构的硅基体(3)的一个表面制备若干个独立的发射极(2),相邻的发射极(2)的边缘之间具有预设的间距;
在制备有发射极(2)的硅基体表面制备钝化层(1);
再制备电极图形,制备电极图形时,在钝化层(1)的表面上与每个发射极(2)对应的区域制备独立的正面电极图形;在硅基体(3)的另一个表面上与每个发射极(2)对应的区域制备独立的背面电极图形。
10.根据权利要求9所述的太阳能电池的制备方法,其特征在于,制备发射极(2)时,采用高温扩散或离子注入的方式制备。
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