CN108950677A - A kind of single crystal pulling furnace thermal field structure - Google Patents
A kind of single crystal pulling furnace thermal field structure Download PDFInfo
- Publication number
- CN108950677A CN108950677A CN201710356903.7A CN201710356903A CN108950677A CN 108950677 A CN108950677 A CN 108950677A CN 201710356903 A CN201710356903 A CN 201710356903A CN 108950677 A CN108950677 A CN 108950677A
- Authority
- CN
- China
- Prior art keywords
- single crystal
- heater
- thermal field
- crystal pulling
- field structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention provides a kind of single crystal pulling furnace thermal field structure, and the single crystal pulling furnace thermal field structure includes: furnace body；Positioned at the intracorporal crucible of the furnace；Primary heater positioned at the crucible side；Positioned at the secondary heater of the crucible bottom；And the third heater above melt in the crucible.The single crystal pulling furnace thermal field structure through the invention, solving the problems, such as the silicon single crystal of existing single crystal pulling furnace thermal field structure preparation, that there are quality is non-uniform.
Description
Technical field
The invention belongs to semiconductor grade monocrystalline silicon manufacturing fields, more particularly to a kind of single crystal pulling furnace thermal field structure.
Background technique
During using vertical pulling method preparation large scale silicon single crystal, since polysilicon inventory is big, in order to meet thermal field
The temperature fluctuation of the long brilliant process of the requirement and guarantee of temperature gradient is small, uses single crystal pulling furnace thermal field structure as shown in Figure 1:
It realizes using the primary heater 13 for being located at 12 side of crucible and positioned at the secondary heater 14 of 12 bottom of crucible to temperature field
Accurate control.
However, in long-term long brilliant process and analog simulation work, gradually find to radiate due to solid liquid interface center it is slow and
Edge rapid heat dissipation causes the shape of solid liquid interface to be convex to crystal, i.e., solid liquid interface middle position is high and peripheral position is low, thus
It is big to directly result in the silicon wafer center and peripheral difference in quality prepared；As shown in Fig. 2, abscissa indicates silicon wafer center to edge
Radius change, ordinate indicates the ratio of temperature gradient at pulling rate and abscissa, the quality of the silicon single crystal standby for weight,
Wherein, black dotted lines are as the criterion value for measuring silicon single crystal quality；As it can be seen that there are larger for the quality of silicon wafer center and peripheral
Difference.
In consideration of it, it is necessary to design the new single crystal pulling furnace thermal field structure of one kind with to solve the above technical problems.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of single crystal pulling furnace thermal field knots
Structure, it is non-uniform that there are quality for solving the problems, such as the silicon single crystal of existing single crystal pulling furnace thermal field structure preparation.
In order to achieve the above objects and other related objects, the present invention provides a kind of single crystal pulling furnace thermal field structure, the list
Brilliant lifting furnace thermal field structure includes:
Furnace body；
Positioned at the intracorporal crucible of the furnace；
Primary heater positioned at the crucible side；
Positioned at the secondary heater of the crucible bottom；And
Third heater above melt in the crucible.
Preferably, the third heater is ring heater.
Preferably, the center of circle of the ring heater is overlapped with the center line of the crucible.
Preferably, the inner circle radius of the ring heater is 300~400mm.
Preferably, the ring heater with a thickness of 20~80mm.
Preferably, the vertical range of the third heater and melt in the crucible is 0~200mm.
Preferably, the power of the primary heater is 70~110kw, the power of the secondary heater is 10~
45kw, the power of the third heater are 0~30kw.
Preferably, the primary heater, secondary heater and third heater are graphite heater.
Preferably, the single crystal pulling furnace thermal field structure further includes the heat shielding above the crucible, wherein described the
Three heaters are located on the inside of the heat shielding.
Preferably, the minimum range of the inner sidewall of the lateral wall and heat shielding of the third heater is 0~100mm.
Preferably, the single crystal pulling furnace thermal field structure further includes the seedholder above the crucible, Yi Jiyu
The seedholder connection, the stretching structure for being promoted or being declined on dip direction for controlling the seedholder.
As described above, single crystal pulling furnace thermal field structure of the invention, has the advantages that
1. single crystal pulling furnace thermal field structure of the present invention utilizes the temperature point of third heater control the position of solid-liquid interface
Cloth inhibits the heat dissipation of solid liquid interface edge, so that the center of solid liquid interface and edge heat dissipation are more uniform, avoids solid liquid interface center
Region raises upward, and then raising prepares the radial uniform quality degree of silicon single crystal.
2. single crystal pulling furnace thermal field structure of the present invention increases the multiplicity of thermal field control by setting third heater
Property, preferably optimize thermal field.
Detailed description of the invention
Fig. 1 is shown as existing single crystal pulling furnace thermal field structure schematic diagram.
Quality of the silicon single crystal center to edge when Fig. 2 is shown as preparing silicon single crystal using existing single crystal pulling furnace thermal field structure
Curve.
Fig. 3 is shown as single crystal pulling furnace thermal field structure schematic diagram of the present invention.
The change curve of solid liquid interface temperature when Fig. 4 a is shown with no third heater, Fig. 4 b are shown with no third and add
The change curve of the position of solid-liquid interface when hot device.
Component label instructions
11 furnace bodies
12 crucibles
121 melts
13 primary heaters
14 secondary heaters
15 third heaters
16 heat shieldings
17 seedholders
18 stretching structures
Specific embodiment
Embodiments of the present invention are illustrated by particular specific embodiment below, those skilled in the art can be by this explanation
Content disclosed by book is understood other advantages and efficacy of the present invention easily.
Fig. 3 is please referred to 4b.It should be clear that this specification structure depicted in this specification institute accompanying drawings, ratio, size etc., only to
Cooperate the revealed content of specification, so that those skilled in the art understands and reads, being not intended to limit the invention can be real
The qualifications applied, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size
It is whole, in the case where not influencing the effect of present invention can be generated and the purpose that can reach, it should all still fall in disclosed skill
Art content obtains in the range of capable of covering.Meanwhile in this specification it is cited as "upper", "lower", "left", "right", " centre " and
The term of " one " etc. is merely convenient to being illustrated for narration, rather than to limit the scope of the invention, relativeness
It is altered or modified, under the content of no substantial changes in technology, when being also considered as the enforceable scope of the present invention.
Embodiment one
As shown in figure 3, the present embodiment provides a kind of single crystal pulling furnace thermal field structure, the single crystal pulling furnace thermal field structure packet
It includes:
Furnace body 11；
Crucible 12 in the furnace body 11；
Primary heater 13 positioned at 12 side of crucible；
Secondary heater 14 positioned at 12 bottom of crucible；And
Third heater 15 above melt 121 in the crucible 12.
It should be noted that the primary heater 13 is used to make thermal field during long brilliant with the secondary heater 14
Temperature Distribution reaches long brilliant requirement, and the third heater 15 improves in solid liquid interface for inhibiting solid liquid interface edge to radiate
The uniformity of the heart and edge heat dissipation.
Specifically, the third heater 15 is ring heater.
Preferably, in the present embodiment, the center of circle of the ring heater is overlapped with the center line of the crucible.
Preferably, the inner circle radius of the ring heater is 300~400mm；It is further preferred that in the present embodiment
In, the inner circle radius of the ring heater is 350mm；Certainly, in other embodiments, the inner circle of the ring heater half
Diameter can also be 300mm, 320mm, 340mm, 360mm, 380mm or 400mm etc..
Preferably, the thickness D of the ring heater is 20~80mm, and the thickness D of the ring heater is outer circle
The difference of radius and inner circle radius；It is further preferred that in the present embodiment, the thickness D of the ring heater is 45mm；When
So, in other embodiments, the thickness D of the ring heater can also be 20mm, 35mm, 50mm, 65mm or 80mm etc..
Specifically, the vertical range of the third heater 15 and melt 121 in the crucible 12 is 0~200mm.
Preferably, in the present embodiment, the vertical range of the third heater 15 and melt 121 in the crucible 12 is
100mm；Certainly, in other embodiments, the vertical range of the third heater 15 and melt 121 in the crucible 12 may be used also
Think 0mm, 45mm, 90mm, 135mm, 180mm or 200mm etc..
Specifically, the power of the primary heater 13 is 70~110kw, the power of the secondary heater 14 is 10~
45kw, the power of the third heater 15 are 0~30kw.
Specifically, the primary heater 13, secondary heater 14 and third heater 15 are graphite heater.
Specifically, the bottom and top of the furnace body 11 are provided with graphite electrode, the primary heater 13 and second
Heater 14 is fixed on the graphite electrode of the bottom of furnace body by electrode bolts, and the third heater 15 passes through electrode spiral shell
Bolt is fixed on the graphite electrode at the top of the furnace body, and by graphite electrode to the primary heater 13, secondary heater
14 and third heater 15 convey electric current, realize heating.
Specifically, the single crystal pulling furnace thermal field structure further includes the heat shielding 16 positioned at 12 top of crucible, wherein institute
It states third heater 15 and is located at 16 inside of heat shielding.
It should be noted that the heat shielding 16 is fixed on the insulation cover, the insulation cover is fixed on institute by pressure ring
It states on furnace body.
Preferably, the minimum range L of the inner sidewall of the lateral wall of the third heater 15 and the heat shielding 16 be 0~
100mm。
Preferably, the heat shielding 16 is graphite heat shielding.
Specifically, the single crystal pulling furnace thermal field structure further includes the seedholder 17 positioned at 12 top of crucible, with
And it is connect with the seedholder 17, the stretching structure for being promoted or being declined on dip direction for controlling the seedholder 17
18。
Preferably, the seedholder 17 selects high temperature resistant, the material with some strength；It is further preferred that at this
In embodiment, the material of the seedholder 17 is Mo, Ni, W and its high-melting-points such as alloy or graphite, high-strength material.
Specifically, the interior side-wall surface of the furnace body 11 is additionally provided with insulation cover, the insulation cover includes heat-preservation cylinder, and packet
Wrap up in the Multi-layer graphite carbon felt of the heat-preservation cylinder；By the way that the number of plies of different graphite carbon felts is arranged on heat-preservation cylinder surface, by insulation cover
It is divided into insulation cover, middle insulation cover and lower insulation cover, to make in the heat preservation for reinforcing crucible portion, crucible top and crucible bottom
With, reduce thermal loss while, form different temperature gradients.
It should be noted that the number of plies of the graphite carbon felt depending on actual temperature requirements, i.e., the described furnace is intracorporal
Temperature requirement is higher, and the number of plies of the graphite carbon felt is more.
Specifically, the crucible includes silica crucible, and it is fixed on the graphite crucible on the outside of the silica crucible；Its
In, the graphite crucible is fixed on above the bottom of the furnace body 11 by supporter.
It should be noted that the supporter includes the crucible pressure pin for being fixed on 11 bottom of furnace body, and it is fixed on described
Crucible pallet above crucible pressure pin；By the way that the crucible 12 to be fixed in the crucible pallet, realize the crucible 12
It is mounted on above the bottom of the furnace body 11.
When the single crystal pulling furnace thermal field structure prepares silicon single crystal through this embodiment, the temperature gradient of solid liquid interface is bent
Line is as shown in solid black lines in Fig. 4 a, wherein other curves are indicated using existing single crystal pulling furnace thermal field structure simultaneously in Fig. 4 a
The temperature gradient curve of its solid liquid interface when preparing silicon single crystal using cz technique and ccz technique.As can be seen that comparing from Fig. 4 a
In existing single crystal pulling furnace thermal field structure, using single crystal pulling furnace thermal field structure (being provided with third heater) described in the present embodiment
When preparing silicon single crystal, the range of temperature of solid liquid interface is small, and Temperature Distribution is more evenly.
When the single crystal pulling furnace thermal field structure prepares silicon single crystal through this embodiment, interface location change curve is as schemed
In 4b shown in solid black lines, wherein other curves indicate to use cz simultaneously using existing single crystal pulling furnace thermal field structure in Fig. 4 b
Its interface location change curve when technique and ccz technique prepare silicon single crystal.As can be seen that being mentioned compared to existing monocrystalline from Fig. 4 b
Furnace thermal field structure is drawn, silicon single crystal is prepared using single crystal pulling furnace thermal field structure (being provided with third heater) described in the present embodiment
When, the amplitude of variation of interface location is smaller, i.e. the center and peripheral difference in height of solid liquid interface is smaller, by improving solid liquid interface
High consistency so that improve crystal quality.
In conclusion single crystal pulling furnace thermal field structure of the invention, has the advantages that
1. single crystal pulling furnace thermal field structure of the present invention utilizes the temperature point of third heater control the position of solid-liquid interface
Cloth inhibits the heat dissipation of solid liquid interface edge, so that the center of solid liquid interface and edge heat dissipation are more uniform, avoids solid liquid interface center
Region raises upward, and then raising prepares the radial uniform quality degree of silicon single crystal.
2. single crystal pulling furnace thermal field structure of the present invention increases the multiplicity of thermal field control by setting third heater
Property, preferably optimize thermal field.
So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (11)
1. a kind of single crystal pulling furnace thermal field structure, which is characterized in that the single crystal pulling furnace thermal field structure includes:
Furnace body；
Positioned at the intracorporal crucible of the furnace；
Primary heater positioned at the crucible side；
Positioned at the secondary heater of the crucible bottom；And
Third heater above melt in the crucible, for inhibiting the heat dissipation of solid liquid interface.
2. single crystal pulling furnace thermal field structure according to claim 1, which is characterized in that the third heater is that annular adds
Hot device.
3. single crystal pulling furnace thermal field structure according to claim 2, which is characterized in that the center of circle of the ring heater with
The center line of the crucible is overlapped.
4. single crystal pulling furnace thermal field structure according to claim 2, which is characterized in that the inner circle of the ring heater half
Diameter is 300~400mm.
5. single crystal pulling furnace thermal field structure according to claim 2, which is characterized in that the ring heater with a thickness of
20~80mm.
6. single crystal pulling furnace thermal field structure according to claim 1, which is characterized in that the third heater and the earthenware
The vertical range of melt is 0~200mm in crucible.
7. single crystal pulling furnace thermal field structure according to claim 1, which is characterized in that the power of the primary heater is
70~110kw, the power of the secondary heater are 10~45kw, and the power of the third heater is 0~30kw.
8. single crystal pulling furnace thermal field structure according to claim 1, which is characterized in that the primary heater, second add
Hot device and third heater are graphite heater.
9. single crystal pulling furnace thermal field structure according to claim 1, which is characterized in that the single crystal pulling furnace thermal field structure
It further include the heat shielding above the crucible, wherein the third heater is located on the inside of the heat shielding.
10. single crystal pulling furnace thermal field structure according to claim 9, which is characterized in that the outside of the third heater
The minimum range of wall and the inner sidewall of the heat shielding is 0~100mm.
11. single crystal pulling furnace thermal field structure according to claim 1, which is characterized in that the single crystal pulling furnace thermal field knot
Structure further includes the seedholder above the crucible, and is connect with the seedholder, for controlling the seed chuck
The stretching structure that head is promoted or declined on dip direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710356903.7A CN108950677A (en) | 2017-05-19 | 2017-05-19 | A kind of single crystal pulling furnace thermal field structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710356903.7A CN108950677A (en) | 2017-05-19 | 2017-05-19 | A kind of single crystal pulling furnace thermal field structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108950677A true CN108950677A (en) | 2018-12-07 |
Family
ID=64461464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710356903.7A Pending CN108950677A (en) | 2017-05-19 | 2017-05-19 | A kind of single crystal pulling furnace thermal field structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108950677A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109554755A (en) * | 2018-12-19 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | A kind of heating equipment and production of polysilicon equipment |
| CN110528063A (en) * | 2019-09-11 | 2019-12-03 | 上海新昇半导体科技有限公司 | A kind of crystal growing apparatus |
| CN111850675A (en) * | 2019-04-30 | 2020-10-30 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201158722Y (en) * | 2008-01-30 | 2008-12-03 | 大庆佳昌科技有限公司 | Thermal field device for gallium arsenide crystal growth |
| CN201933198U (en) * | 2010-12-31 | 2011-08-17 | 乐山凯亚达光电科技有限公司 | Compound semiconductor heating device |
| KR20120130125A (en) * | 2011-05-20 | 2012-11-29 | 쇼와 덴코 가부시키가이샤 | Single crystal producing apparatus, single crystal producing method and single crystal |
| US20150017086A1 (en) * | 2013-07-12 | 2015-01-15 | Globalwafers Japan Co., Ltd. | Silicon single crystal and method for manufacture thereof |
-
2017
- 2017-05-19 CN CN201710356903.7A patent/CN108950677A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201158722Y (en) * | 2008-01-30 | 2008-12-03 | 大庆佳昌科技有限公司 | Thermal field device for gallium arsenide crystal growth |
| CN201933198U (en) * | 2010-12-31 | 2011-08-17 | 乐山凯亚达光电科技有限公司 | Compound semiconductor heating device |
| KR20120130125A (en) * | 2011-05-20 | 2012-11-29 | 쇼와 덴코 가부시키가이샤 | Single crystal producing apparatus, single crystal producing method and single crystal |
| US20150017086A1 (en) * | 2013-07-12 | 2015-01-15 | Globalwafers Japan Co., Ltd. | Silicon single crystal and method for manufacture thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109554755A (en) * | 2018-12-19 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | A kind of heating equipment and production of polysilicon equipment |
| CN111850675A (en) * | 2019-04-30 | 2020-10-30 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device and method |
| CN110528063A (en) * | 2019-09-11 | 2019-12-03 | 上海新昇半导体科技有限公司 | A kind of crystal growing apparatus |
| TWI738466B (en) * | 2019-09-11 | 2021-09-01 | 大陸商上海新昇半導體科技有限公司 | Crystal growth apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108950677A (en) | A kind of single crystal pulling furnace thermal field structure | |
| TW482831B (en) | Single crystal production apparatus and production of single crystal | |
| US10138573B2 (en) | Auxiliary heating device for zone melting furnace and heat preservation method for single crystal rod thereof | |
| CN201962419U (en) | Sapphire single-crystal furnace | |
| CN206204482U (en) | A kind of device of the reduction InP crystal twins based on VGF methods | |
| CN110172730A (en) | A kind of single crystal growing furnace heater and its heating process | |
| WO2019184128A1 (en) | Magnet coil used for magnetically controlling czochralski single crystal and method for magnetically controlling czochralski single crystal | |
| CN109930200A (en) | Heat shielding and monocrystalline silicon growing furnace structure | |
| CN110408996A (en) | Crucible and SiC single crystal grower | |
| WO2014172928A1 (en) | Thermal field of float zone furnace having double heating power supplies and heat preservation method | |
| CN105834382A (en) | Molten steel feeding system used for preparing amorphous strips | |
| CN207435586U (en) | A kind of thermal field structure of growing large-size single-crystal silicon carbide | |
| CN104630889A (en) | Sapphire single growth furnace heat preservation device capable of conveniently regulating temperature gradient | |
| CN107326343A (en) | The induction heating apparatus grown for thin-film material | |
| CN102839362B (en) | Substrate treatment apparatus | |
| CN102758245A (en) | Deoxidizing type single crystal furnace | |
| CN109930197A (en) | Heat shielding and monocrystalline silicon growing furnace structure | |
| CN204589378U (en) | A kind of convenient sapphire list growth furnace attemperator regulating thermograde | |
| TW202041724A (en) | Device and process for growing a semiconductor crystal | |
| CN107805840A (en) | A kind of crystal pulling mechanism of crystal pulling furnace | |
| CN102828236A (en) | Self-controlled heating system for monocrystal furnace | |
| CN207153675U (en) | A kind of reactor heating furnace for being conveniently replaceable heating element heater | |
| CN114381797B (en) | Telescopic quartz feeding device, straight pulling single crystal furnace and method for improving pulling speed | |
| CN209103952U (en) | A kind of charging tray frame for soft magnetic materials heat treatment | |
| KR20170088120A (en) | Single crystal ingot growth apparatus and the growing method of it |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181207 |