CN109930197A - Heat shielding and monocrystalline silicon growing furnace structure - Google Patents
Heat shielding and monocrystalline silicon growing furnace structure Download PDFInfo
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- CN109930197A CN109930197A CN201711365658.2A CN201711365658A CN109930197A CN 109930197 A CN109930197 A CN 109930197A CN 201711365658 A CN201711365658 A CN 201711365658A CN 109930197 A CN109930197 A CN 109930197A
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Abstract
The present invention provides a kind of heat shielding and monocrystalline silicon growing furnace structure, the screen bottom of heat shielding includes upper layer, lower layer and side wall, the upper layer, the lower layer, the side wall and screen-wall surround a cavity, the cavity is filled with thermal insulation material, the heat shielding inner inclination is biased to horizontal by first angle in the upper layer, the lower layer is partially described to melt crucible inner inclination horizontal by second angle, the upper layer includes the first cambered surface being recessed towards the cavity inside, and the lower layer includes the second cambered surface being recessed towards the cavity inside.The present invention achievees the purpose that optimization axially and longitudinally temperature gradient by changing the design of heat shielding bottom, to improve the pulling rate of monocrystalline silicon, improve the quality uniformity of silicon wafer radial direction, and pass through the heat reflection of lower layer's cambered surface, reach energy-efficient effect, by the heat absorption of upper layer cambered surface, achieve the effect that accelerate pulling silicon single crystal heat dissipation.The present invention can effectively improve process efficiency, energy saving, be with a wide range of applications in field of semiconductor manufacture.
Description
Technical field
The invention belongs to semiconductor manufacturing facility and design fields, more particularly to a kind of heat shielding and monocrystalline silicon growing furnace knot
Structure.
Background technique
Monocrystalline silicon is the raw material for manufacturing semiconductor silicon device, for heavy-duty rectifier processed, high power transistor, two poles
Pipe, switching device etc..The elemental silicon of melting silicon atom in solidification with diamond lattice is arranged in many nucleus, if these are brilliant
Core grows up to the identical crystal grain of high preferred orientation, then these crystal grain combine in parallel just crystallizes into monocrystalline silicon.The preparation method of monocrystalline silicon is logical
It is often first obtained polysilicon or amorphous silicon, then grows bar-like single crystal silicon from melt with vertical pulling method or floating zone method.
Single crystal growing furnace is one kind in inert gas (based on nitrogen, helium) environment, with graphite heater that polysilicon etc. is more
Brilliant material fusing, with the equipment of Grown by CZ Method dislocation-free monocrystalline.
Currently, large scale silicon single crystal especially 12 cun or more silicon single crystal are mainly prepared by vertical pulling method.Vertical pulling method is
By melting 11 9 high purity polycrystalline silicons in silica crucible, silicon is prepared by seeding, shouldering, isometrical, ending using seed crystal
Monocrystalline.This method is it is crucial that the thermal field being made of graphite and thermal insulation material, the design of thermal field directly determine the matter of crystal
Amount, technique, energy consumption etc..
In the design of entire thermal field, the most key is just exactly the design of heat shielding.The design of heat shielding first directly affects solid
The vertical temperature gradient at liquid interface interface influences V/G ratio by the variation of gradient and determines crystal quality.Secondly, will affect solid
The horizontal temperature gradient at liquid interface controls the quality uniformity of entire silicon wafer.Finally, the rational design of heat shielding will affect crystal heat
History, controls the forming core of matter crystal internal defect and grows up, very crucial during preparing high-order silicon wafer.
Currently, the outer layer of common heat shielding is SiC coating or pyrolytic graphite, internal layer is heat preservation graphite felt.The position of heat shielding
It is placed in thermal field top, cylindrical, crystal bar is drawn out inside drum.Heat shielding close to crystal bar graphite heat reflectivity compared with
It is low, absorb the heat that crystal bar distributes.The usual heat reflectivity of graphite outside heat shielding is higher, conducive to the heat radiation for distributing melt
It goes back, improves the thermal insulation property of thermal field, reduce the power consumption of entire technique.
Existing heat shielding design still has the non-uniform defect of temperature gradient, is based on this, providing one kind can effectively mention
The monocrystalline silicon growing furnace structure of high-temperature gradient uniformity is necessary.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of monocrystalline silicon growing furnace structure,
For solving the problems, such as that there are temperature gradients is non-uniform for screen design in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of heat shielding for monocrystalline silicon growing furnace, institute
The melt crucible top that heat shielding is set to the monocrystalline silicon growing furnace is stated, the heat shielding includes screen-wall and screen bottom, and the screen bottom is set
It is placed in the bottom of the screen-wall, the screen bottom, which has, lifts the window passed through for the melt, and the screen bottom includes upper layer, lower layer
And side wall, the side wall are connected between the upper layer and the lower layer and surround the window, the upper layer, the lower layer,
The side wall and the screen-wall surround a cavity, and the cavity is filled with thermal insulation material, and the upper layer is horizontal by first jiao
Degree is biased to the heat shielding inner inclination, and the lower layer is partially described to melt crucible inner inclination, institute horizontal by second angle
Stating upper layer includes the first cambered surface being recessed towards the cavity inside, and the lower layer includes the second arc being recessed towards the cavity inside
Face.
Preferably, the upper layer at the screen bottom and the side wall include the first graphite linings of the first hot reflection coefficient, institute
The lower layer for stating screen bottom includes the second graphite linings of the second hot reflection coefficient, and it is anti-that first hot reflection coefficient is less than second heat
Penetrate the half of coefficient.
Preferably, first hot reflection coefficient of first graphite linings is between 0~0.2, second graphite
Second hot reflection coefficient of layer is between 0.8~1.
Preferably, the floor projection shape at the screen bottom includes annulus shape, and the inside diameter ranges at the screen bottom are between 330mm
Between~380mm, the external diametrical extent at the screen bottom is between 500mm~750mm.
Preferably, the thermal insulation material includes carbon fiber felt.
Preferably, the first angle between the upper layer and the horizontal plane at the screen bottom is between 15 °~45 °.
Preferably, the second angle between the lower layer and the horizontal plane at the screen bottom is between 15 °~60 °.
Preferably, the lower layer is in the cambered surface being recessed towards the cavity inside, and the heat reflection focus of the cambered surface is located at
The surface or inside of melt in the melt crucible, to improve the thermal efficiency.
The present invention also provides a kind of monocrystalline silicon growing furnace structure, the growth furnace structure include: furnace body, including furnace body wall with
And cavity, the cavity are surrounded by the furnace body wall；Melt crucible is set in the cavity, to carry melt；Heating
Device is arranged in the cavity and is distributed in melt crucible periphery, to provide the thermal field of the melt crucible；And heat
Screen is set to melt crucible top, and the heat shielding includes screen-wall and screen bottom, and the screen bottom is set to the bottom of the screen-wall
Portion, the screen bottom, which has, lifts the window passed through for the melt, and the screen bottom includes upper layer, lower layer and side wall, the side wall
It is connected between the upper layer and the lower layer and surrounds the window, the upper layer, the lower layer, the side wall and the screen
Wall surrounds a cavity, and the cavity is filled with thermal insulation material, and the upper layer is biased in the heat shielding horizontal by first angle
Portion's inclination, the lower layer is partially described to melt crucible inner inclination horizontal by second angle, and the upper layer includes towards described
First cambered surface of cavity inside recess, the lower layer include the second cambered surface being recessed towards the cavity inside.
Preferably, the upper layer at the screen bottom and the side wall include the first graphite linings of the first hot reflection coefficient, institute
The lower layer for stating screen bottom includes the second graphite linings of the second hot reflection coefficient, and it is anti-that first hot reflection coefficient is less than second heat
Penetrate the half of coefficient.
Preferably, first hot reflection coefficient of first graphite linings is between 0~0.2, second graphite
Second hot reflection coefficient of layer is between 0.8~1.
Preferably, the floor projection shape at the screen bottom includes annulus shape, and the inside diameter ranges at the screen bottom are between 330mm
Between~380mm, the external diametrical extent at the screen bottom is between 500mm~750mm.
Preferably, the thermal insulation material includes carbon fiber felt.
Preferably, the first angle between the upper layer and the horizontal plane at the screen bottom is between 15 °~45 °.
Preferably, the second angle between the lower layer and the horizontal plane at the screen bottom is between 15 °~60 °.
Preferably, the lower layer is in the cambered surface being recessed towards the cavity inside, and the heat reflection focus of the cambered surface is located at
The surface or inside of melt in the melt crucible, to improve the thermal efficiency.
As described above, heat shielding and monocrystalline silicon growing furnace structure of the invention, have the advantages that
Heat shielding screen bottom of the invention includes upper layer, lower layer and side wall, the upper layer, the lower layer, the side wall and screen-wall
A cavity is surrounded, the cavity is filled with thermal insulation material, and the upper layer is biased to inside the heat shielding horizontal by first angle
Inclination, the lower layer is partially described to melt crucible inner inclination horizontal by second angle, and the upper layer includes towards the sky
First cambered surface of chamber inner recess, the lower layer include the second cambered surface being recessed towards the cavity inside.The present invention passes through change
The design of heat shielding bottom achievees the purpose that optimization axially and longitudinally temperature gradient, to improve the pulling rate of monocrystalline silicon, improves silicon wafer diameter
To quality uniformity, and the upper layer cambered surface is passed through to reach energy-efficient effect by the heat reflection of lower layer's cambered surface
Heat absorption accelerates heat dissipation, to accelerate the cooling velocity of pulling silicon single crystal.The present invention can effectively improve process efficiency, save energy
Source is with a wide range of applications in field of semiconductor manufacture.
Detailed description of the invention
Fig. 1 is shown as the overall structure diagram of monocrystalline silicon growing furnace structure of the invention.
Fig. 2 is shown as the structural schematic diagram of the heat shielding of monocrystalline silicon growing furnace structure of the invention.
Component label instructions
11 furnace bodies
12 melt crucibles
13 heaters
14 heat shieldings
141 screen-walls
142 screen bottoms
The upper layer at 143 screen bottoms
The lower layer at 144 screen bottoms
145 side walls
146 windows
147 cavitys
15 shafts
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to FIG. 1 to FIG. 2.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in diagram then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
As shown in Fig. 2, the present embodiment provides a kind of heat shielding 14 for monocrystalline silicon growing furnace, the heat shielding 14 is set to institute
12 top of melt crucible is stated, temperature gradient needed for the crystallization to provide pulling silicon single crystal.
The heat shielding 14 includes that screen bottom 142 and screen-wall 141, the screen bottom 142 are set to the bottom of the screen-wall 141, institute
Stating screen bottom 142 has the window 146 passed through for melt lifting, and the screen bottom 142 includes upper layer 143, lower layer 144 and side wall
145, the side wall 145 is connected between the upper layer 143 and the lower layer 144 and surrounds the window, the upper layer 143,
The lower layer 144, the side wall 145 and the screen-wall 141 surround a cavity 147, and the cavity 147 is filled with thermal insulation material,
14 inner inclination of heat shielding is biased to horizontal by first angle in the upper layer 143, and the lower layer 144 is horizontal by second
Angle is partially described to 12 inner inclination of melt crucible, and the side wall 145 is connected between the upper layer 143 and the lower layer 144
And the window 146 is surrounded, the upper layer 143 includes the first cambered surface towards 147 inner recess of cavity, the lower layer 144
Include the second cambered surface towards 147 inner recess of cavity.
As shown in Fig. 2, side wall 145 described in the upper layer 143 at the screen bottom includes the first graphite linings of the first hot reflection coefficient,
The lower layer 144 at the screen bottom includes the second graphite linings of the second hot reflection coefficient, and first hot reflection coefficient is less than described the
The half of two hot reflection coefficients.Further, first hot reflection coefficient of first graphite linings is between 0~0.2
Between, to improve the absorption of the distributed heat of pulling silicon single crystal, pull rate can be effectively improved, second graphite linings it is described
Second hot reflection coefficient, to improve the reflection of the heat from the melt crucible 12, improves melt between 0.8~1
Heating efficiency saves the energy.Preferably, first hot reflection coefficient of first graphite linings is between 0~0.1, with
The absorption for improving the distributed heat of pulling silicon single crystal can effectively improve pull rate, second heat of second graphite linings
Reflection coefficient is between 0.9~1, to further increase its effect.
As shown in Fig. 2, the first angle a1 between the upper layer 143 and the horizontal plane at the screen bottom 142 is between 15 °
Between~45 °.
As shown in Fig. 2, the second angle a2 between the lower layer 144 and the horizontal plane at the screen bottom 142 is between 15 °
Between~60 °.
The bottom surface of the lower layer 144 is biased to inside the melt crucible 12, its institute into the melt crucible 12 can be improved
The heat reflection of the melt of carrying further increases heat reflection efficiency by adjusting its reflection angle, saves the energy.By adjusting
Second angle a2 between the lower layer 144 and the horizontal plane, the temperature gradient of adjustable pulling silicon single crystal, to reach
Need the purpose of uniformity.
As shown in Fig. 2, the upper layer 143 is in the first cambered surface towards 147 inner recess of cavity, first cambered surface can
To effectively improve its endotherm area, accelerate heat dissipation, to accelerate the cooling velocity of pulling silicon single crystal.
As shown in Fig. 2, the lower layer 144 is in the second cambered surface towards 147 inner recess of cavity, and second cambered surface
Heat reflection focus be located at the surface or inside of melt in the melt crucible 12, to improve the thermal efficiency.
As shown in Fig. 2, the floor projection shape at the screen bottom 142 includes annulus shape.The inside diameter ranges at the screen bottom 142
Between 330mm~380mm, the external diametrical extent at the screen bottom 142 is between 500mm~750mm.
The width range of the cavity 147 is between 150mm~350mm.The heat preservation filled in the cavity 147
Material includes carbon fiber felt.
As shown in FIG. 1 to FIG. 2, the present embodiment also provides a kind of monocrystalline silicon growing furnace structure, and the growth furnace structure includes:
Furnace body 11, melt crucible 12, heater 13 and heat shielding 14.
As shown in Figure 1, the furnace body 11 includes 11 wall of furnace body and cavity, the cavity is wrapped by 11 wall of furnace body
It encloses, the top of the furnace body 11 has an opening, for the entrance of crystal seed and the lifting of monocrystalline silicon.
As shown in Figure 1, the melt crucible 12 is set in the cavity, to carry melt.
The melt crucible 12 include silica crucible, can high temperature resistant, to carry the silicon melt of molten condition.The melt
Crucible 12 is supported by a shaft 15, and the shaft 15 drives the melt crucible 12 to rotate, to improve in the melt crucible 12
Silicon melt heating uniformity.
As shown in Figure 1, the heater 13 is arranged in the cavity and is distributed in 12 periphery of melt crucible, to mention
For the thermal field of the melt crucible 12.
The heater 13 may be configured as annular and surround the melt crucible 12, to improve the uniformity of thermal field.
As shown in Figures 1 and 2, the heat shielding 14 is set to 12 top of melt crucible, to provide pulling silicon single crystal
Crystallization needed for temperature gradient.
The heat shielding 14 includes that screen bottom 142 and screen-wall 141, the screen bottom 142 are set to the bottom of the screen-wall 141, institute
Stating screen bottom 142 has the window 146 passed through for melt lifting, and the screen bottom 142 includes upper layer 143, lower layer 144 and side wall
145, the upper layer 143, the lower layer 144, the side wall 145 and the screen-wall 141 surround a cavity 147, the cavity 147
Filled with thermal insulation material, 14 inner inclination of heat shielding, the lower layer are biased to horizontal by first angle in the upper layer 143
144 is partially described to 12 inner inclination of melt crucible horizontal by second angle, and the side wall 145 is connected to the upper layer 143
Between the lower layer 144 and the window 146 is surrounded, the upper layer 143 includes towards the first of 147 inner recess of cavity
Cambered surface, the lower layer 144 include the second cambered surface towards 147 inner recess of cavity.
As shown in Fig. 2, side wall 145 described in the upper layer 143 at the screen bottom includes the first graphite linings of the first hot reflection coefficient,
The lower layer 144 at the screen bottom includes the second graphite linings of the second hot reflection coefficient, and first hot reflection coefficient is less than described the
The half of two hot reflection coefficients.Further, first hot reflection coefficient of first graphite linings is between 0~0.2
Between, to improve the absorption of the distributed heat of pulling silicon single crystal, pull rate can be effectively improved, second graphite linings it is described
Second hot reflection coefficient, to improve the reflection of the heat from the melt crucible 12, improves melt between 0.8~1
Heating efficiency saves the energy.Preferably, first hot reflection coefficient of first graphite linings is between 0~0.1, with
The absorption for improving the distributed heat of pulling silicon single crystal can effectively improve pull rate, second heat of second graphite linings
Reflection coefficient is between 0.9~1, to further increase its effect.
As shown in Fig. 2, the first angle a1 between the upper layer 143 and the horizontal plane at the screen bottom 142 is between 15 °
Between~45 °.
As shown in Fig. 2, the second angle a2 between the lower layer 144 and the horizontal plane at the screen bottom 142 is between 15 °
Between~60 °.
The bottom surface of the lower layer 144 is biased to inside the melt crucible 12, its institute into the melt crucible 12 can be improved
The heat reflection of the melt of carrying further increases heat reflection efficiency by adjusting its reflection angle, saves the energy.By adjusting
Second angle a2 between the lower layer 144 and the horizontal plane, the temperature gradient of adjustable pulling silicon single crystal, to reach
Need the purpose of uniformity.
As shown in Fig. 2, the upper layer 143 is in the first cambered surface towards 147 inner recess of cavity, first cambered surface can
To effectively improve its endotherm area, accelerate heat dissipation, to accelerate the cooling velocity of pulling silicon single crystal.
As shown in Fig. 2, the lower layer 144 is in the second cambered surface towards 147 inner recess of cavity, and second cambered surface
Heat reflection focus be located at the surface or inside of melt in the melt crucible 12, to improve the thermal efficiency.
As shown in Fig. 2, the floor projection shape at the screen bottom 142 includes annulus shape.The inside diameter ranges at the screen bottom 142
Between 330mm~380mm, the external diametrical extent at the screen bottom 142 is between 500mm~750mm.
The width range of the cavity 147 is between 150mm~350mm.The heat preservation filled in the cavity 147
Material includes carbon fiber felt.
As described above, heat shielding 14 and monocrystalline silicon growing furnace structure of the invention, have the advantages that
14 screen bottom 142 of heat shielding of the invention include upper layer 143, lower layer 144 and side wall 145, the upper layer 143, it is described under
Layer 144, the side wall 145 and the screen-wall 141 surround a cavity 147, and the cavity 147 is filled with thermal insulation material, it is described on
Layer 143 is biased to 14 inner inclination of heat shielding horizontal by first angle, and the lower layer 144 is inclined horizontal by second angle
It is described to 12 inner inclination of melt crucible, the side wall 145 is connected between the upper layer 143 and the lower layer 144 and surrounds
The window 146, the upper layer include the first cambered surface being recessed towards the cavity inside, and the lower layer includes towards in the cavity
Second cambered surface of portion's recess.The present invention reaches the mesh for optimizing axially and longitudinally temperature gradient by the design of change 14 bottom of heat shielding
, to improve the pulling rate of monocrystalline silicon, the quality uniformity of silicon wafer radial direction is improved, and pass through the heat reflection of 144 cambered surface of lower layer,
To reach energy-efficient effect, by the heat absorption of 143 cambered surface of upper layer, accelerate heat dissipation, to accelerate pulling silicon single crystal
Cooling velocity.The present invention can effectively improve process efficiency, energy saving, before field of semiconductor manufacture has a wide range of applications
Scape.
So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (16)
1. a kind of heat shielding for monocrystalline silicon growing furnace, which is characterized in that the heat shielding is set to the monocrystalline silicon growing furnace
Melt crucible top, the heat shielding include that screen-wall and screen bottom, the screen bottom are set to the bottom of the screen-wall, and the screen bottom has
Lift the window that passes through for the melt, the screen bottom includes upper layer, lower layer and side wall, the side wall be connected to the upper layer with
Between the lower layer and the window is surrounded, the upper layer, the lower layer, the side wall and the screen-wall surround a cavity, institute
Cavity is stated filled with thermal insulation material, the heat shielding inner inclination, the lower layer are biased to horizontal by first angle in the upper layer
Partially described to melt crucible inner inclination horizontal by second angle, the upper layer includes the to be recessed towards the cavity inside
One cambered surface, the lower layer include the second cambered surface being recessed towards the cavity inside.
2. the heat shielding according to claim 1 for monocrystalline silicon growing furnace, it is characterised in that: the upper layer at the screen bottom
And the side wall includes the first graphite linings of the first hot reflection coefficient, the lower layer at the screen bottom includes the of the second hot reflection coefficient
Two graphite linings, first hot reflection coefficient are less than the half of second hot reflection coefficient.
3. the heat shielding according to claim 2 for monocrystalline silicon growing furnace, it is characterised in that: the institute of first graphite linings
The first hot reflection coefficient is stated between 0~0.2, second hot reflection coefficients of second graphite linings between 0.8~1 it
Between.
4. the heat shielding according to claim 1 for monocrystalline silicon growing furnace, it is characterised in that: the floor projection at the screen bottom
Shape includes annulus shape, and between 330mm~380mm, the external diametrical extent at the screen bottom is situated between the inside diameter ranges at the screen bottom
Between 500mm~750mm.
5. the heat shielding according to claim 1 for monocrystalline silicon growing furnace, it is characterised in that: the thermal insulation material includes carbon
Fibrofelt.
6. the heat shielding according to claim 1 for monocrystalline silicon growing furnace, it is characterised in that: the upper layer at the screen bottom
First angle between the horizontal plane is between 15 °~45 °.
7. the heat shielding according to claim 1 for monocrystalline silicon growing furnace, it is characterised in that: the lower layer at the screen bottom
Second angle between the horizontal plane is between 15 °~60 °.
8. the heat shielding of monocrystalline silicon growing furnace is used for described in any one according to claim 1~7, it is characterised in that: under described
Layer is in the cambered surface being recessed towards the cavity inside, and the heat reflection focus of the cambered surface is located at the table of melt in the melt crucible
Face or inside, to improve the thermal efficiency.
9. a kind of monocrystalline silicon growing furnace structure, which is characterized in that the growth furnace structure includes:
Furnace body, including furnace body wall and cavity, the cavity are surrounded by the furnace body wall；
Melt crucible is set in the cavity, to carry melt；
Heater is arranged in the cavity and is distributed in melt crucible periphery, to provide the thermal field of the melt crucible；
And
Heat shielding is set to melt crucible top, and the heat shielding includes screen-wall and screen bottom, and the screen bottom is set to the screen-wall
Bottom, the screen bottom, which has, lifts the window that passes through for the melt, and the screen bottom includes upper layer, lower layer and side wall, described
Side wall is connected between the upper layer and the lower layer and surrounds the window, the upper layer, the lower layer, the side wall and institute
It states screen-wall and surrounds a cavity, the cavity is filled with thermal insulation material, and the heat is biased to horizontal by first angle in the upper layer
Shield inner inclination, the lower layer is partially described to melt crucible inner inclination horizontal by second angle, and the upper layer includes court
First cambered surface of the cavity inside recess, the lower layer include the second cambered surface being recessed towards the cavity inside.
10. monocrystalline silicon growing furnace structure according to claim 9, it is characterised in that: the upper layer at the screen bottom and institute
The first graphite linings that side wall includes the first hot reflection coefficient are stated, the lower layer at the screen bottom includes the second stone of the second hot reflection coefficient
Layer of ink, first hot reflection coefficient are less than the half of second hot reflection coefficient.
11. monocrystalline silicon growing furnace structure according to claim 10, it is characterised in that: described the of first graphite linings
One hot reflection coefficient is between 0~0.2, and second hot reflection coefficient of second graphite linings is between 0.8~1.
12. monocrystalline silicon growing furnace structure according to claim 9, it is characterised in that: the floor projection shape at the screen bottom
Comprising annulus shape, the inside diameter ranges at the screen bottom between 330mm~380mm, the external diametrical extent at the screen bottom between
Between 500mm~750mm.
13. monocrystalline silicon growing furnace structure according to claim 9, it is characterised in that: the thermal insulation material includes carbon fiber
Felt.
14. monocrystalline silicon growing furnace structure according to claim 9, it is characterised in that: the upper layer at the screen bottom and institute
The first angle between horizontal plane is stated between 15 °~45 °.
15. monocrystalline silicon growing furnace structure according to claim 9, it is characterised in that: the lower layer and institute at the screen bottom
The second angle between horizontal plane is stated between 15 °~60 °.
16. according to monocrystalline silicon growing furnace structure described in claim 9~15 any one, it is characterised in that: the lower layer is in
The cambered surface being recessed towards the cavity inside, and the heat reflection focus of the cambered surface be located in the melt crucible surface of melt or
Inside, to improve the thermal efficiency.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111876823A (en) * | 2020-08-10 | 2020-11-03 | 西安奕斯伟硅片技术有限公司 | Combined sleeve of single crystal furnace and single crystal furnace |
| CN113106546A (en) * | 2021-03-25 | 2021-07-13 | 徐州鑫晶半导体科技有限公司 | Guide cylinder for single crystal furnace, single crystal furnace and machining method of guide cylinder |
| US11932961B2 (en) | 2020-08-10 | 2024-03-19 | Xian Eswin Material Technology Co., Ltd. | Assembly sleeve of single crystal pulling apparatus, and single crystal pulling apparatus |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1197128A (en) * | 1997-03-21 | 1998-10-28 | 瓦克硅电子半导体材料股份公司 | Device and method for pulling single crystal |
| CN1356408A (en) * | 2000-11-27 | 2002-07-03 | 希特隆股份有限公司 | Equipment for growing raw monocrystal |
| JP2004059408A (en) * | 2002-07-31 | 2004-02-26 | Sumitomo Mitsubishi Silicon Corp | Apparatus for pulling silicon single crystal and method for pulling the silicon single crystal |
| CN1782143A (en) * | 2004-11-23 | 2006-06-07 | 希特隆股份有限公司 | Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby |
| KR20100013854A (en) * | 2008-08-01 | 2010-02-10 | 주식회사 실트론 | Manufacturing device for crystal ingot |
| CN105401212A (en) * | 2015-12-02 | 2016-03-16 | 上海超硅半导体有限公司 | Single crystal silicon growth control method |
| CN105887186A (en) * | 2016-05-30 | 2016-08-24 | 上海超硅半导体有限公司 | Silicon single-crystal pulling equipment and growing method |
-
2017
- 2017-12-18 CN CN201711365658.2A patent/CN109930197A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1197128A (en) * | 1997-03-21 | 1998-10-28 | 瓦克硅电子半导体材料股份公司 | Device and method for pulling single crystal |
| CN1356408A (en) * | 2000-11-27 | 2002-07-03 | 希特隆股份有限公司 | Equipment for growing raw monocrystal |
| JP2004059408A (en) * | 2002-07-31 | 2004-02-26 | Sumitomo Mitsubishi Silicon Corp | Apparatus for pulling silicon single crystal and method for pulling the silicon single crystal |
| CN1782143A (en) * | 2004-11-23 | 2006-06-07 | 希特隆股份有限公司 | Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby |
| KR20100013854A (en) * | 2008-08-01 | 2010-02-10 | 주식회사 실트론 | Manufacturing device for crystal ingot |
| CN105401212A (en) * | 2015-12-02 | 2016-03-16 | 上海超硅半导体有限公司 | Single crystal silicon growth control method |
| CN105887186A (en) * | 2016-05-30 | 2016-08-24 | 上海超硅半导体有限公司 | Silicon single-crystal pulling equipment and growing method |
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| CN111876823A (en) * | 2020-08-10 | 2020-11-03 | 西安奕斯伟硅片技术有限公司 | Combined sleeve of single crystal furnace and single crystal furnace |
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Application publication date: 20190625 |