CN108948361B - 一种聚(硅烷-碳硅烷)及其制备方法 - Google Patents
一种聚(硅烷-碳硅烷)及其制备方法 Download PDFInfo
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- CN108948361B CN108948361B CN201810817784.5A CN201810817784A CN108948361B CN 108948361 B CN108948361 B CN 108948361B CN 201810817784 A CN201810817784 A CN 201810817784A CN 108948361 B CN108948361 B CN 108948361B
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- silane
- carbosilane
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
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- Organic Chemistry (AREA)
- Silicon Polymers (AREA)
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CN201810817784.5A CN108948361B (zh) | 2018-07-24 | 2018-07-24 | 一种聚(硅烷-碳硅烷)及其制备方法 |
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CN201810817784.5A CN108948361B (zh) | 2018-07-24 | 2018-07-24 | 一种聚(硅烷-碳硅烷)及其制备方法 |
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CN108948361A CN108948361A (zh) | 2018-12-07 |
CN108948361B true CN108948361B (zh) | 2020-06-26 |
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CN110078926A (zh) * | 2019-05-16 | 2019-08-02 | 湖南远辉新材料研究院有限公司 | 一种聚碳硅烷的大批量高压合成方法 |
Citations (1)
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CN103214675A (zh) * | 2013-05-03 | 2013-07-24 | 中国科学院化学研究所 | 一种聚(甲基硅烷-碳硅烷)及其制备方法 |
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CN108285467B (zh) * | 2018-01-17 | 2019-06-11 | 中国科学院化学研究所 | 一种氢化钙还原氯硅烷制备氢硅烷的方法 |
CN108129510B (zh) * | 2018-01-17 | 2019-06-11 | 中国科学院化学研究所 | 一种氯烷基氢硅烷的制备方法 |
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CN103214675A (zh) * | 2013-05-03 | 2013-07-24 | 中国科学院化学研究所 | 一种聚(甲基硅烷-碳硅烷)及其制备方法 |
Non-Patent Citations (1)
Title |
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Evaluation of poly(methylsilane-carbosilane) synthesized from methyl-dichlorosilane and chloromethyldichloromethylsilane as a precursor for SiC;Xinliang Wang等;《J. APPL. POLYM. SCI.》;20180515;46610(1至6) * |
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Effective date of registration: 20181213 Address after: 100190 Institute of Chemistry, Chinese Academy of Sciences, North 1st Street, Zhongguancun, Haidian District, Beijing Applicant after: Institute of Chemistry, Chinese Academy of Sciences Applicant after: University of Chinese Academy of Sciences Address before: 100190 Institute of Chemistry, Chinese Academy of Sciences, North 1st Street, Zhongguancun, Haidian District, Beijing Applicant before: Institute of Chemistry, Chinese Academy of Sciences |
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Effective date of registration: 20230417 Address after: 100190 Institute of Chemistry, Chinese Academy of Sciences, North 1st Street, Zhongguancun, Haidian District, Beijing Patentee after: INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES Address before: 100190 Institute of Chemistry, Chinese Academy of Sciences, North 1st Street, Zhongguancun, Haidian District, Beijing Patentee before: INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES Patentee before: University OF CHINESE ACADEMY OF SCIENCES Effective date of registration: 20230417 Address after: Floor 2, Unit 2, Building 6, Yard 18, Yanxin South Road, Fangshan District, Beijing 102502 Patentee after: Beijing Heertai New Material Technology Co.,Ltd. Address before: 100190 Institute of Chemistry, Chinese Academy of Sciences, North 1st Street, Zhongguancun, Haidian District, Beijing Patentee before: INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES |