CN108923748B - A kind of diagnosing failure of photovoltaic array method based on IV curved scanning - Google Patents
A kind of diagnosing failure of photovoltaic array method based on IV curved scanning Download PDFInfo
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Abstract
The invention discloses a kind of diagnosing failure of photovoltaic array methods based on IV curved scanning, based on the photovoltaic DC-to-AC converter with IV characteristic curve scanning function, its diagnosing failure of photovoltaic array method includes four big steps: step A: the parameter tuning of array mathematical model and foundation；Step B: online failure judges in advance；Step C: the fault type recognition based on IV curved scanning；Step D: assessment of failure.Before executing fault diagnosis, need to adjust number of arrays model parameter first, thus establish one it is accurate and can be adaptive array mathematical model.The invention has the benefit that diagnosing failure of photovoltaic array method of the invention, it can accurately judge the failures such as array shadow occlusion, bypass diode short circuit, array open circuit, aging, inverter MPPT tracking exception, and accurate assessment can be made to failure, so that the O&M to power station provides more important information.
Description
Technical field
The invention belongs to photovoltaic power generations and O&M field, more particularly to a kind of photovoltaic array event based on IV curved scanning
Hinder diagnostic method.
Background technique
Photovoltaic array is the important component of photovoltaic generating system, since its long-term work is than relatively rugged environment
In, open circuit, short circuit, hot spot and the inverter mistake of array can be caused under the factors effect such as heat, electricity and external destruction
The failures such as stream, over-voltage, power tube open circuit, seriously affect the generating efficiency of photovoltaic system.In addition, local shades, which block, not only to be reduced
Output power of photovoltaic module can also become one of inducements of failures such as hot spot.Major accident caused by avoid because of failure is promoted
The research to photovoltaic plant on-line fault diagnosis method has been unfolded in system power benefit, domestic and international research institution and enterprise, packet
Include infrared image method, model method of comparison, outlier detection method etc..Nowadays, some inverter producers are in inverter product
Array IV curved scanning function is increased, this gives to further increase fault identification type and improve fault diagnosis precision and provide
Opportunity.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the deficiencies of existing technologies, provide a kind of based on IV curved scanning
Diagnosing failure of photovoltaic array method is established on the basis of with the photovoltaic DC-to-AC converter of IV scanning function, can be accurate
Judge array shadow occlusion, bypass diode short circuit, array open circuit, aging, inverter MPPT (Maximum Power
Point Tracking MPPT maximum power point tracking) failures such as abnormal are tracked, and accurate assessment can be made to failure, from
And more important information is provided to the O&M in power station.
To achieve the goals above, the present invention is to realize by the following technical solutions:
A kind of diagnosing failure of photovoltaic array method based on IV curved scanning, based on IV characteristic curve scanning function
Photovoltaic DC-to-AC converter, the diagnosing failure of photovoltaic array method include the following steps:
Step A: the parameter tuning of array mathematical model and foundation specifically include:
A1) nameplate parameter and array configuration parameter under input module STC, and calculate Array Model Optimal Parameters under STC
θ0；
A2) several groups IV characteristic curve, the varying environment parameter are under varying environment parameter under acquisition unfaulty conditions
Different irradiation level and varying environment temperature；
A3) IV curve pre-processes, including the smothing filtering and linear interpolation processing to curve；
A4) using IV curve short dot and open circuit point coordinate, and the coplanar irradiation level of actual measurement is fitted using least square method
With environment temperature with cell piece is practical receives irradiation level and temperature funtion relationship；
A5 it) is adjusted using parameter of the particle swarm optimization algorithm to the display mathematical model, and establishes Optimal Parameters
Table θ=Table (S, T), and model parameter list of the different irradiation level at a temperature of, S are actual measurement irradiation degree series, and T is to survey
Environment temperature sequence；
A6 photovoltaic array optimized mathematical model Curve=f (S, T, θ)) is established；
Step B: the pre- judgement of online failure specifically includes:
B1) judge whether current environment parameter is stable on the basis of array mathematical model is established, if stablizing, carry out
The failure of next step judges in advance；
B2) the deviation e of computing array power and model poweraAnd the function of current array and power maximum array in power station
Rate deviation esIf one of deviation is greater than predetermined threshold, it is labeled as primary exception, and time that recording exceptional continuously occurs
Number, when abnormal continuous appearance 3 times, then it is assumed that current array is out of order, and side enters fault identification process；
Step C: the fault type recognition based on IV curved scanning specifically includes:
C1) scanning array and each string IV characteristic curve is obtained；
C2) IV curve pre-processes, including the linear interpolation and the disposal of gentle filter to curve；
C3 Characteristic Extraction, including current in the short I) are carried out to pretreated IV curvesc, open circuit point voltage Voc, electricity
It flows and leads maximum value D about the second order of voltagemax, electric current leads minimum value D about the second order of voltagemin, open-circuit voltage point electric current about
The first derivative values K of voltages, first derivative values K of the short circuit current point electric current about voltagesh, power of operating point and open-circuit voltage
With short circuit current product ratio FF；
C4 it) is out of order type, including shadow occlusion according to characteristic parameter logic judgment, bypass diode short circuit, component is old
Change, group string open circuit, array open circuit, inverter MPPT track abnormal failure type, if fault type can not judge, then it is assumed that be function
Rate loss failure extremely；
Step D: assessment of failure；
After obtaining fault type, failure is assessed according to the deviation of characteristic quantity and model curve of output characteristic quantity,
Failure is blocked for local shades, estimates coverage extent；For bypass diode short trouble, bypass diode short circuit is estimated
Number；For degradation failure, degree of aging is estimated；Abnormal phenomenon is tracked for MPPT, its tracing deviation is estimated, for that can not judge
The power of fault type loss phenomenon extremely out, estimates its power loss.
A kind of above-mentioned diagnosing failure of photovoltaic array method based on IV curved scanning, input module in the step A1
Nameplate parameter and array configuration parameter include open-circuit voltage V under STC under STCoc_stc, short circuit current Isc_stc, maximum power point
Voltage VMPP_stc, maximum power point electric current IMPP_stc, short circuit current temperature coefficient α, component series cells number Ncs, by component
Road diode number Nd, array component number Ns；And calculate Array Model Optimal Parameters θ under STC0=(A0,Rs0,Rsh0)T, wherein
A0For the ideal factor of diode model single under STC, it is defaulted as 1, Rs0For array equivalent series resistance, R under STCsh0For under STC
Array equivalent parallel resistance.
A kind of above-mentioned diagnosing failure of photovoltaic array method based on IV curved scanning surveys irradiation level in the step A4
It is shown with the practical functional relation such as formula (1) for receiving irradiation level and temperature of environment temperature and cell piece:
In formula, S is to survey coplanar irradiation level, and T is actual measurement environment temperature；β1、β2、β3、β4And β5For the ginseng to fitting function
Number；ScellFor cell piece irradiation level estimated value, TcellFor cell piece Temperature estimate value, the obtaining step of the two is as follows:
A4.1 obtains the pretreated IV curve of n item, obtains the open circuit point coordinate of every curveWith short circuit current
Point coordinateAnd obtain corresponding coplanar irradiation level S(i)With environment temperature T(i), wherein i represents curve index；
A4.2 is by coordinateWithThe array IV based on single diode model shown in formula (2) is substituted into respectively
In curvilinear equation, wherein Iph、Is、Is0、A0、Rs0、Rsh0、Isc0、IMPP0、Voc0Variable and constant are acquired by formula (3), obtain formula (4) institute
Show equation group, is acquired under current environment parameter by solve system of equation (4)WithIt is final to obtain S for n IV curve
=(S(1),S(2),...,S(n))TWith T=(T(1),T(2),...,T(n))TAnd it is correspondingWith
Wherein, IphFor photogenerated current；IsFor reverse saturation current；Is0For the reverse saturation current under STC；Isc0For under STC
Short circuit current；IMPP0For maximum power point electric current under STC；Voc0For open-circuit voltage under STC；S0For irradiation level under STC；T0For
Temperature under STC；K is Boltzmann constant, 1.38 × 10-23J/K；Q is charge coefficient, 1.60 × 10-19C；EgIt is wide for forbidden band
Degree, value 1.12；
A4.3 carries out Function Fitting to formula (1) using least square method, finally acquires β1、β2、β3、β4And β5, to establish
Play actual measurement irradiation level and environment temperature and the practical functional relation for receiving irradiation level and temperature of cell piece.
A kind of above-mentioned diagnosing failure of photovoltaic array method based on IV curved scanning utilizes population in the step A5
Optimization algorithm adjusts model parameter, and establishes Optimal Parameters table θ=Table (S, T), and its step are as follows:
A5.1 obtains IV characteristic curve after the pretreatment of n item, and obtains the current sequence of every curveAnd contact potential seriesWherein i is curve index, and L is every song
Line number of sampling points；
A5.2 constructs fitness function shown in formula (5), whereinWithIt is acquired by formula (1)；
For parameter to be optimized, and it is as follows to set each parameter interval range:
A5.3 obtains the Optimal Parameters of every IV curve using particle swarm optimization algorithmIts step packet
Include: a) initializing population size, initial position and initial coordinate, b) fitness that each particle is calculated according to formula (5), according to
Fitness updates the optimal solution and globally optimal solution of each particle, and updates the position and speed of each particle, c) if reaching pre-
Determine the number of iterations, then export globally optimal solution, otherwise returns to step b)；
A5.4 establishes model parameter table θ=Table (S, T), wherein S=(S(1),S(2),...,S(n))T, T=(T(1),T(2),...,T(n))T, θ=(θ(1),θ(2),...,θ(n))。
A kind of above-mentioned diagnosing failure of photovoltaic array method based on IV curved scanning establishes photovoltaic battle array in the step A6
Column optimized mathematical model Curve=f (S, T, θ) needs to estimate actual measurement irradiation using model parameter table θ=Table (S, T) first
It spends S and surveys the model parameter under environment temperature TArray IV curvilinear equation is recycled to calculate actual measurement environment
IV characteristic curve under parameter, the specific steps are as follows:
A6.1 finds out adjacent on ST projection plane in table θ=Table (S, T) 4 according to actual measurement environmental parameter (S, T)
Point, and meet point (S, T) inside the quadrangle that 4 points are constituted, if the point on 4 perspective planes ST searched is respectively (Sa,
Ta,)、(Sb,Tb)、(Sc,Tc)、(Sd,Td), corresponding parameter is θa、θb、θc、θd, then using least square method to (Sa,
Ta,Aa), (Sb,Tb,Ab), (Sc,Tc,Ac), (Sd,Td,Ad) 4, space plane fitting is carried out, Optimal Parameters A is obtained about S and T
Plane formula similarly obtains Optimal Parameters RsAbout S and T plane formula and RshAbout S and T plane formula, finally estimate
It surveys irradiation level S and surveys the model parameter under environment temperature T
A6.2, which works as, obtains estimation parameterAfterwards, according to each point on formula (6) computing array IV curve, wherein ScellWith
TcellIt is acquired by formula (1), finally obtains the IV curve Curve under actual measurement irradiation level S and environment temperature T.
A kind of above-mentioned diagnosing failure of photovoltaic array method based on IV curved scanning, online failure is pre- in the step B1
The whether stable judgment method of the current environment parameter for needing to judge before judgement are as follows: obtain current coplanar irradiation level Sb, environment temperature
Spend TbB-1 coplanar irradiation and environment temperature before constitute the irradiation degree series S=(S that size is b1,S3,…,Sb)TAnd
Environment temperature sequence T=(T1,T3,…,Tb)T, calculate separately the standard deviation sigma of irradiation degree seriesSAnd the standard deviation of temperature sequence
σT, work as σS< 50 and σTWhen < 5, it is believed that current environment parameter stability, the failure that next step is unfolded judge in advance.
A kind of above-mentioned diagnosing failure of photovoltaic array method based on IV curved scanning in the step C4, passes through feature
The logic judgment of amount is come to the failure progress fault identification judged in advance, the specific steps are as follows:
C4.1 obtains all kinds of characteristic quantities of actual measurement IV curve, including current in the short I in step C3sc, open circuit point voltage
Voc, electric current leads maximum value D about the second order of voltagemax, electric current leads minimum value D about the second order of voltagemin, open-circuit voltage point electric current
First derivative values K about voltages, first derivative values K of the short circuit current point electric current about voltagesh, power of operating point P and open circuit
Voltage and short circuit current product ratio FF,And it obtains array mathematical model and is exported under currently actual measurement environmental parameter
IV curve characteristic quantity, the open circuit point voltage including model IV curveOpen-circuit voltage point electric current is led about the single order of voltage
Numerical valueFirst derivative values of the short circuit current point electric current about voltageFill factorPmaxFor work
Point power maximum value；
After C4.2 obtains actual measurement IV curvilinear characteristic amount and model output IV curvilinear characteristic amount, failure is judged according to following process
Type: if operating point I=0 andIt is then open-circuit fault, otherwise excludes the failure and continue to judge other types；If Dmax
> 1 or Dmin< -1 is then shadow occlusion failure, otherwise excludes the failure and continue to judge other types；If
It is then shorted diode fault, otherwise excludes the failure and continue to judge other types；IfIt is then old
Change failure, otherwise excludes the failure and continue to judge other types；IfIt is then abnormal for inverter MPPT tracking, otherwise
Type is that power loses extremely.
A kind of above-mentioned diagnosing failure of photovoltaic array method based on IV curved scanning, in step D, according to actual measurement IV curve
The deviation of characteristic quantity and model output IV curvilinear characteristic amount assesses failure, the specific steps are as follows:
D1) if opening assessment of failure function and fault type is shadow occlusion failure, shadow occlusion degree is commented
Estimate, shadow occlusion degree is described by two parameters, respectively equivalent light transmittance γ corresponding to the shadow region, by shadow region
The number N for the substring that domain coverssbs, γ and NsubEvaluation method it is as follows:
γEvaluation method: it sets electric current in actual measurement IV curve and about the second order of voltage leads maximum value DmaxThe corresponding electric current electricity in place
Pressure value is respectivelyWithThen
NsbsEvaluation method: N is acquired by solve system of equation (7)sbsNumerical solution and it is rounded；
D2) if opening assessment of failure function and fault type is bypass diode short trouble, bypass diode is estimated
Short-circuit number Nds, estimate formula are as follows:
D3) if opening assessment of failure function and fault type is degradation failure, degree of aging is assessed, the degree
It is described by two amounts, respectively for embodying the amount H of equivalent series resistance increasesAnd subtract for embodying equivalent parallel resistance
Small amount Hp, calculation method is respectivelyAndThe two is bigger to illustrate that degree of aging is more serious；
D4) if opening assessment of failure function and fault type as inverter MPPT tracking exception, tracing deviation is carried out
Estimation is described by two amounts, respectively tracking offset direction Dir and power loss Δ P, and when operating point, work is being surveyed
Dir is -1 when the left side of IV curve maximum power point, and the right is then 1；Δ P is maximum power point power and power of operating point
Difference；
D5 it) is lost extremely if opening assessment of failure function and fault type for power, calculates power loss Δ P.
The invention has the benefit that
(1) diagnosing failure of photovoltaic array method of the invention establishes the base in the photovoltaic DC-to-AC converter with IV scanning function
On plinth, and diagnosing failure of photovoltaic array process is divided into four big steps, the respectively parameter tuning of mathematical model and foundation, failure
Pre- judgement, fault identification and assessment of failure, the through the invention implementation of technical solution can accurately judge array yin
The failures such as shadow blocks, bypass diode short circuit, array open circuit, aging, inverter MPPT tracking are abnormal, and failure can be made
Accurately assessment, so that the O&M to power station provides more important information.
(2) photovoltaic plant method for diagnosing faults of the invention, since the IV characteristic curve scanning function of inverter is utilized,
It can get the more information about power station state, therefore system fault diagnosis type can be increased, and easily facilitate fault diagnosis side
The implementation of case.
(3) photovoltaic plant method for diagnosing faults of the invention, fault diagnosis flow scheme use 4 big steps, are to establish first
Mathematical model that can be adaptive, the implementation of the step may make the present invention to be applied to different occasions, varying environment condition and not
In photovoltaic plant with component model, and effectively improve fault diagnosis precision；Second step is that failure judges that this method is to ring in advance
The stability of border parameter proposes certain requirement, and pre- judgement is served only for whether detection array breaks down, only fault pre-alarming
It is allowed for access afterwards the fault type recognition of third step, therefore the probability of failure mistaken diagnosis can be reduced；Third step is bent based on IV
Fault identification more fault types can effectively be judged by the extraction of IV curvilinear characteristic amount；It is finally assessment of failure,
The step can provide the information such as fault degree, can provide strong foundation for power station O&M decision.
Detailed description of the invention
Fig. 1 is flow chart of the invention；
Fig. 2 is the flow chart of fault type recognition process of the present invention；
Fig. 3 is the present invention for judging the foundation figure of shadow occlusion.
Specific embodiment
In order to make those skilled in the art better understand the technical solutions in the application, below in conjunction with the application reality
The attached drawing in example is applied, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described implementation
Example is merely a part but not all of the embodiments of the present application.Based on the embodiment in the application, this field is common
The application protection all should belong in technical staff's every other embodiment obtained without making creative work
Range.
As shown in Figure 1, diagnosing failure of photovoltaic array method of the invention, includes four big steps: I: array mathematical model
Parameter tuning and foundation；II: online failure judges in advance；III: the fault type recognition based on IV curved scanning；IV: failure is commented
Estimate.Wherein the parameter tuning of array mathematical model and foundation are the premise of step II, III, IV, i.e., before executing fault diagnosis,
Need to adjust number of arrays model parameter first, thus establish one it is accurate and can be adaptive array mathematical model.
Label 1 to 6 is the parameter tuning and Establishing process of array mathematical model in Fig. 1, and detail is as follows:
1. nameplate parameter and array configuration parameter under input module STC (standard test condition), including electricity of opening a way under STC
Press Voc_stc, short circuit current Isc_stc, maximum power point voltage VMPP_stc, maximum power point electric current IMPP_stc, short circuit current temperature system
Number α, component series cells number Ncs, component bypass diode number Nd, array component number Ns；And calculate array under STC
Model optimization parameter θ0=(A0,Rs0,Rsh0) T, wherein A0For the ideal factor of diode model single under STC, it is defaulted as 1, Rs0For
Array equivalent series resistance under STC, Rsh0For array equivalent parallel resistance under STC.Especially it is noted that the present invention is only applicable in
The all concatenated component of all cell pieces in component, and include Ncs/NdA substring.
2. (different irradiation level and varying environment temperature) several groups IV under varying environment parameter under acquisition unfaulty conditions
Characteristic curve.
3.IV curve pretreatment, including the linear interpolation and the disposal of gentle filter to curve.
4. using IV curve short dot and open circuit point coordinate, and being fitted in conjunction with least square method and surveying spoke shown in formula (1)
Illumination and environment temperature and the practical functional relation for receiving irradiation level and temperature of cell piece:
In formula, S is to survey coplanar irradiation level, and T is actual measurement environment temperature；β1、β2、β3、β4And β5For the ginseng to fitting function
Number；ScellFor cell piece irradiation level estimated value, TcellFor cell piece temperature estimation value, the obtaining step of the two is as follows:
1) the pretreated IV curve of n item is obtained, the open circuit point coordinate of every curve is obtainedWith short circuit current point
CoordinateAnd obtain corresponding coplanar irradiation level S(i)With environment temperature T(i), wherein i represents curve index.
2) by coordinateWithThe array IV substituted into shown in formula (2) based on single diode model respectively is bent
(wherein I in line equationph、Is、Is0、A0、Rs0、Rsh0、Isc0、IMPP0、Voc0Variable and constant are acquired by formula (3)), obtain formula (4) institute
Show equation group, can be acquired under current environment parameter by solve system of equation (4)WithFor n IV curve, finally
S=(S can be obtained(1),S(2),...,S(n))TWith T=(T(1),T(2),...,T(n))TAnd it is correspondingWith
Wherein, IphFor photogenerated current；IsFor reverse saturation current；Is0For the reverse saturation current under STC；Isc0For under STC
Short circuit current；IMPP0For maximum power point electric current under STC；Voc0For open-circuit voltage under STC；S0For irradiation level under STC；T0For
Temperature under STC；K is Boltzmann constant, 1.38 × 10-23J/K；Q is charge coefficient, 1.60 × 10-19C；EgIt is wide for forbidden band
Degree, value 1.12.
Function Fitting is carried out to formula (1) using least square method, finally acquires β1、β2、β3、β4And β5, to set up reality
Survey irradiation level and environment temperature and the practical functional relation for receiving irradiation level and temperature of cell piece.
5. adjusting using particle swarm optimization algorithm to model parameter, and model parameter table θ=Table (S, T) is established,
Its step are as follows:
1) IV characteristic curve after n item pre-processes is obtained, and obtains the current sequence of every curveAnd contact potential seriesWherein i is curve index, and L is every song
Line number of sampling points.
2) fitness function shown in formula (5) is constructed, whereinWithIt is acquired by formula (1)；For to
Optimal Parameters, and it is as follows to set each parameter interval range:
3) Optimal Parameters of every IV curve are obtained using particle swarm optimization algorithmIts step packet
Include: a) initializing population size, initial position and initial coordinate, b) fitness that each particle is calculated according to formula (5), according to
Fitness updates the optimal solution and globally optimal solution of each particle, and updates the position and speed of each particle, c) if reaching pre-
Determine the number of iterations, then export globally optimal solution, otherwise returns to step b).
4) model parameter table θ=Table (S, T) is established, wherein S=(S(1),S(2),...,S(n))T, T=(T(1),T(2),...,T(n))T, θ=(θ(1),θ(2),...,θ(n))
6. establishing photovoltaic array optimized mathematical model Curve=f (S, T, θ), its step are as follows:
1) adjacent on ST projection plane in table θ=Table (S, T) 4 are found out according to actual measurement environmental parameter (S, T)
Point, and meet point (S, T) inside the quadrangle that 4 points are constituted, if the point on 4 perspective planes ST searched is respectively (Sa,
Ta,)、(Sb,Tb)、(Sc,Tc)、(Sd,Td), corresponding parameter is θa、θb、θc、θd, then using least square method to (Sa,
Ta,Aa), (Sb,Tb,Ab), (Sc,Tc,Ac), (Sd,Td,Ad) 4, space plane fitting is carried out, Optimal Parameters A is obtained about S and T
Plane formula similarly can get Optimal Parameters RsAbout S and T plane formula and RshAbout S and T plane formula, can finally estimate
It calculates actual measurement irradiation level S and surveys the model parameter under environment temperature TIt constitutes
2) when obtain estimation parameterAfterwards, can be according to each point on formula (6) computing array IV curve, wherein ScellWith
TcellIt is acquired by formula (1), can finally obtain the IV curve Curve under actual measurement irradiation level S and environment temperature T.To be array
Fault diagnosis provide one it is more accurate and can be adaptive mathematical model.
Label 7 to 14 is online failure anticipation cutout journey in Fig. 1, and detail is as follows:
If 7-8. model has been established, obtain environmental parameter, in array output power and power station other arrays output
Power.
9. judge whether current environment parameter is stable, only environmental parameter is stablized and can just carry out failure and judge in advance, reason
Be when irradiation level or more serious environmental temperature fluctuation that photovoltaic module output is different surely to reach stable state, and inverter with
Track maximum power point also has certain delay, so that array can not be output to maximum power shape under current environment parameter
State, it is therefore desirable to carry out environmental parameter judgement of stability, judgment method is as follows: current coplanar irradiation level S is obtainedb, environment temperature
Spend TbB-1 coplanar irradiation and environment temperature before constitute the irradiation degree series S=(S that size is b1,S3,…,Sb)TAnd
Environment temperature sequence T=(T1,T3,…,Tb)T, calculate separately the standard deviation sigma of irradiation degree seriesSAnd the standard deviation of temperature sequence
σT, work as σS< 50 and σTWhen < 5, it is believed that the failure of current environment parameter stability, deployable next step judges in advance.
If 10-14. stablizes when environmental parameter, the deviation e of computing array power and model poweraAnd current array with
The power deviation e of power maximum array in power stationsIf ea> EaOr es> Es(EaAnd EsThe threshold value respectively set), then it marks
To be primary abnormal, and the number that recording exceptional continuously occurs, if abnormal occur 3 times, fault pre-alarming.
Label 15 to 19 is fault type recognition process in Fig. 1, and detail is as follows:
If the early warning of 15-16. failure, inverter scanning array is utilized, and obtains array actual measurement IV characteristic curve.
17. a pair actual measurement IV characteristic curve pre-processes, including linear interpolation and smothing filtering.
18. obtaining all kinds of characteristic quantities of actual measurement IV curve, including current in the short Isc, open circuit point voltage Voc, electric current about
The second order of voltage leads maximum value Dmax, electric current leads minimum value D about the second order of voltagemin, open-circuit voltage point electric current is about voltage
First derivative values Ks, first derivative values K of the short circuit current point electric current about voltagesh, power of operating point P and open-circuit voltage and short circuit
Amp product ratioAnd it is bent to obtain the IV that array mathematical model exports under currently actual measurement environmental parameter
The characteristic quantity of line, the open circuit point voltage including model IV curveFirst derivative values of the open-circuit voltage point electric current about voltageFirst derivative values of the short circuit current point electric current about voltageFill factorPmaxFor operating point
Power maximum value.
19. under normal circumstances, when array is opened a way, array work is being opened according to characteristic quantity logic judgment fault type
Road electrical voltage point；As shown in figure 3, IV curve will appear step when occurring shadow occlusion in array, and at step point electric current for
The second derivative values of voltage are maximum, and the second order at knee point leads value minimum；When there is bypass diode short-circuit type, array IV curve
Open circuit point voltage can reduce；When there is degradation failure, the increase of array equivalent series resistance and K are normally behaved assIncrease, or
Equivalent parallel resistance reduces and KshReduce；When there is inverter MPPT tracking exception, array operating point can move to left or move to right
It is dynamic, so as to cause power loss.To sum up, can judge fault type according to process as shown in Figure 2: if operating point I=0 andIt is then open-circuit fault, otherwise excludes the failure and continue to judge other types；If Dmax> 1 or Dmin< -1 is then yin
Shadow blocks failure, otherwise excludes the failure and continues to judge other types；IfIt is then shorted diode fault,
Otherwise it excludes the failure and continues to judge other types；IfIt is then degradation failure, otherwise excludes the event
Hinder and continues to judge other types；IfThen abnormal for inverter MPPT tracking, otherwise type is that power damages extremely
It loses.
Label 20 to 25 is assessment of failure process in Fig. 1, and detail is as follows:
21. if commenting opening assessment of failure function and fault type is shadow occlusion failure shadow occlusion degree
Estimate (assuming that only there is a shadow occlusion region, and the cell piece that the region overlay arrives is all complete, and there is no cell pieces by office
The case where portion is blocked), shadow occlusion degree is described by two parameters, respectively equivalent light transmittance corresponding to the shadow region
γ, the number N of the substring covered by shadow regionsbs(substring is a string of batteries in photovoltaic module under a bypass diode
Piece).γ and NsubEvaluation method it is as follows:
γEvaluation method: it sets electric current in actual measurement IV curve and about the second order of voltage leads maximum value DmaxThe corresponding electric current electricity in place
Pressure value is respectivelyWithThen
NsbsEvaluation method: N is acquired by solve system of equation (7)sbsNumerical solution and it is rounded.
22. if estimating bypass diode opening assessment of failure function and fault type is bypass diode short trouble
Short-circuit number Nds, estimate formula are as follows:
23. if being assessed degree of aging, the degree opening assessment of failure function and fault type is degradation failure
It is described by two amounts, respectively for embodying the amount H of equivalent series resistance increasesAnd subtract for embodying equivalent parallel resistance
Small amount Hp, calculation method is respectivelyAndThe two is bigger to illustrate that degree of aging is more serious.
24. if being carried out open assessment of failure function and fault type as inverter MPPT tracking exception to tracing deviation
Estimation is described by two amounts, respectively tracking offset direction Dir and power loss Δ P, and when operating point, work is being surveyed
Dir is -1 when the left side of IV curve maximum power point, and the right is then 1.Δ P is maximum power point power and power of operating point
Difference.
25. if losing extremely open assessment of failure function and fault type for power, calculate power loss Δ P.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.Industry description
Merely illustrate the principles of the invention, without departing from the spirit and scope of the present invention, the present invention also have various change and
It improves, these changes and improvements all fall within the protetion scope of the claimed invention.The claimed scope of the invention is by appended power
Sharp claim and its equivalent thereof.
Claims (8)
1. a kind of diagnosing failure of photovoltaic array method based on IV curved scanning, which is characterized in that based on IV characteristic curve
The photovoltaic DC-to-AC converter of scanning function, the diagnosing failure of photovoltaic array method include the following steps:
Step A: the parameter tuning of array mathematical model and foundation specifically include:
A1) nameplate parameter and array configuration parameter under input module STC, and calculate Array Model Optimal Parameters θ under STC0；
A2) several groups IV characteristic curve, the varying environment parameter are difference under varying environment parameter under acquisition unfaulty conditions
Irradiation level and varying environment temperature；
A3) IV curve pre-processes, including the smothing filtering and linear interpolation processing to curve；
A4) using IV curve short dot and open circuit point coordinate, and the coplanar irradiation level of actual measurement and ring are fitted using least square method
Border temperature with cell piece is practical receives irradiation level and temperature funtion relationship；
A5) using particle swarm optimization algorithm to it is described display mathematical model parameter adjust, and establish Optimal Parameters table θ=
Table (S, T), and model parameter list of the different irradiation level at a temperature of, S are actual measurement irradiation degree series, and T is to survey environment temperature
Degree series；
A6 photovoltaic array optimized mathematical model Curve=f (S, T, θ)) is established；
Step B: the pre- judgement of online failure specifically includes:
B1) judge whether current environment parameter is stable on the basis of array mathematical model is established, if stablizing, carry out next
The failure of step judges in advance；
B2) the deviation e of computing array power and model poweraAnd current array and the power of power maximum array in power station it is inclined
Poor esIf one of deviation is greater than predetermined threshold, it is labeled as primary exception, and the number that recording exceptional continuously occurs, when
Abnormal continuous appearance 3 times, then it is assumed that current array is out of order, and side enters fault identification process；
Step C: the fault type recognition based on IV curved scanning specifically includes:
C1) scanning array and each string IV characteristic curve is obtained；
C2) IV curve pre-processes, including the linear interpolation and the disposal of gentle filter to curve；
C3 Characteristic Extraction, including current in the short I) are carried out to pretreated IV curvesc, open circuit point voltage Voc, electric current pass
Maximum value D is led in the second order of voltagemax, electric current leads minimum value D about the second order of voltagemin, open-circuit voltage point electric current is about voltage
First derivative values Ks, first derivative values K of the short circuit current point electric current about voltagesh, power of operating point and open-circuit voltage with it is short
Road amp product ratio FF；
C4 it) is out of order type, including shadow occlusion according to characteristic parameter logic judgment, bypass diode short circuit, component aging, group
String open circuit, array open circuit, inverter MPPT track abnormal failure type, if fault type can not judge, then it is assumed that be that power is different
Often loss failure；
Step D: assessment of failure；
After obtaining fault type, failure is assessed according to the deviation of characteristic quantity and model curve of output characteristic quantity, for
Local shades block failure, estimate coverage extent；For bypass diode short trouble, bypass diode short circuit number is estimated；
For degradation failure, degree of aging is estimated；Abnormal phenomenon is tracked for MPPT, its tracing deviation is estimated, for that can not judge
The power loss phenomenon extremely for carrying out fault type, estimates its power loss.
2. a kind of diagnosing failure of photovoltaic array method based on IV curved scanning according to claim 1, it is characterised in that:
Nameplate parameter and array configuration parameter include open-circuit voltage V under STC under input module STC in the step A1oc_stc, short circuit
Electric current Isc_stc, maximum power point voltage VMPP_stc, maximum power point electric current IMPP_stc, short circuit current temperature coefficient α, component series connection
Cell piece number Ncs, component bypass diode number Nd, array component number Ns；And calculate Array Model Optimal Parameters θ under STC0
=(A0,Rs0,Rsh0)T, wherein A0For the ideal factor of diode model single under STC, it is defaulted as 1, Rs0It is equivalent for array under STC
Series resistance, Rsh0For array equivalent parallel resistance under STC.
3. a kind of diagnosing failure of photovoltaic array method based on IV curved scanning according to claim 2, it is characterised in that:
Irradiation level and environment temperature and the practical functional relation such as formula (1) for receiving irradiation level and temperature of cell piece are surveyed in the step A4
It is shown:
In formula, S is to survey coplanar irradiation level, and T is actual measurement environment temperature；β1、β2、β3、β4And β5For the parameter to fitting function；
ScellFor cell piece irradiation level estimated value, TcellFor cell piece Temperature estimate value, the obtaining step of the two is as follows:
A4.1 obtains the pretreated IV curve of n item, obtains the open circuit point coordinate of every curveIt is sat with short circuit current point
MarkAnd obtain corresponding coplanar irradiation level S(i)With environment temperature T(i), wherein i represents curve index；
A4.2 is by coordinateWithThe array IV curve based on single diode model shown in formula (2) is substituted into respectively
In equation, wherein Iph、Is、Is0、A0、Rs0、Rsh0、Isc0、IMPP0、Voc0Variable and constant are acquired by formula (3), obtain side shown in formula (4)
Journey group is acquired under current environment parameter by solve system of equation (4)WithIt is final to obtain S=(S for n IV curve(1),S(2),...,S(n))TWith T=(T(1),T(2),...,T(n))TAnd it is correspondingWith
Wherein, IphFor photogenerated current；IsFor reverse saturation current；Is0For the reverse saturation current under STC；Isc0It is short under STC
Road electric current；IMPP0For maximum power point electric current under STC；Voc0For open-circuit voltage under STC；S0For irradiation level under STC；T0For under STC
Temperature；K is Boltzmann constant, 1.38 × 10-23J/K；Q is charge coefficient, 1.60 × 10-19C；EgFor forbidden bandwidth, take
Value 1.12；
A4.3 carries out Function Fitting to formula (1) using least square method, finally acquires β1、β2、β3、β4And β5, to set up reality
Survey irradiation level and environment temperature and the practical functional relation for receiving irradiation level and temperature of cell piece.
4. a kind of diagnosing failure of photovoltaic array method based on IV curved scanning according to claim 3, it is characterised in that:
Model parameter is adjusted using particle swarm optimization algorithm in the step A5, and establish Optimal Parameters table θ=Table (S,
T), its step are as follows:
A5.1 obtains IV characteristic curve after the pretreatment of n item, and obtains the current sequence of every curve
And contact potential seriesWherein i is curve index, and L is every curve number of sampling points；
A5.2 constructs fitness function shown in formula (5), whereinWithIt is acquired by formula (1)；For to
Optimal Parameters, and it is as follows to set each parameter interval range:
A5.3 obtains the Optimal Parameters of every IV curve using particle swarm optimization algorithmIts step includes:
A) population size, initial position and initial coordinate, b are initialized) according to the fitness of each particle of formula (5) calculating, according to suitable
Response updates the optimal solution and globally optimal solution of each particle, and updates the position and speed of each particle, c) if reaching predetermined
The number of iterations, then export globally optimal solution, otherwise returns to step b)；
A5.4 establishes model parameter table θ=Table (S, T), wherein S=(S(1),S(2),...,S(n))T, T=(T(1),T(2),...,
T(n))T, θ=(θ(1),θ(2),...,θ(n))。
5. a kind of diagnosing failure of photovoltaic array method based on IV curved scanning according to claim 3, it is characterised in that:
Photovoltaic array optimized mathematical model Curve=f (S, T, θ) is established in the step A6, need first using model parameter table θ=
Table (S, T) estimates actual measurement irradiation level S and surveys the model parameter under environment temperature TRecycle array
IV curvilinear equation calculates the IV characteristic curve under actual measurement environmental parameter, the specific steps are as follows:
A6.1 finds out 4 points adjacent on ST projection plane in table θ=Table (S, T) according to actual measurement environmental parameter (S, T),
And meet point (S, T) inside the quadrangle that 4 points are constituted, if the point on 4 perspective planes ST searched is respectively (Sa,
Ta,)、(Sb,Tb)、(Sc,Tc)、(Sd,Td), corresponding parameter is θa、θb、θc、θd, then using least square method to (Sa,
Ta,Aa), (Sb,Tb,Ab), (Sc,Tc,Ac), (Sd,Td,Ad) 4, space plane fitting is carried out, Optimal Parameters A is obtained about S and T
Plane formula similarly obtains Optimal Parameters RsAbout S and T plane formula and RshAbout S and T plane formula, finally estimate
It surveys irradiation level S and surveys the model parameter under environment temperature T
A6.2, which works as, obtains estimation parameterAfterwards, according to each point on formula (6) computing array IV curve, wherein ScellAnd TcellIt is logical
It crosses formula (1) to acquire, finally obtains the IV curve Curve under actual measurement irradiation level S and environment temperature T.
6. a kind of diagnosing failure of photovoltaic array method based on IV curved scanning according to claim 1, it is characterised in that:
The whether stable judgment method of the current environment parameter that online failure needs to judge before judging in advance in the step B1 are as follows: acquisition is worked as
Preceding coplanar irradiation level Sb, environment temperature TbB-1 coplanar irradiation and environment temperature before constitute the irradiation degree series that size is b
S=(S1,S3,…,Sb)TAnd environment temperature sequence T=(T1,T3,…,Tb)T, calculate separately the standard deviation sigma of irradiation degree seriesS
And the standard deviation sigma of temperature sequenceT, work as σS< 50 and σTWhen < 5, it is believed that the failure of next step is unfolded in current environment parameter stability
Pre- judgement.
7. a kind of diagnosing failure of photovoltaic array method based on IV curved scanning according to claim 2, it is characterised in that:
In the step C4, fault identification is carried out to the failure judged in advance by the logic judgment of characteristic quantity, specific steps are such as
Under:
C4.1 obtains all kinds of characteristic quantities of actual measurement IV curve, including current in the short I in step C3sc, open circuit point voltage Voc, electricity
It flows and leads maximum value D about the second order of voltagemax, electric current leads minimum value D about the second order of voltagemin, open-circuit voltage point electric current about
The first derivative values K of voltages, first derivative values K of the short circuit current point electric current about voltagesh, power of operating point P and open-circuit voltage
With short circuit current product ratio FF,And obtain the IV that array mathematical model exports under currently actual measurement environmental parameter
The characteristic quantity of curve, the open circuit point voltage including model IV curveFirst derivative values of the open-circuit voltage point electric current about voltageFirst derivative values of the short circuit current point electric current about voltageFill factor PmaxFor power of operating point
Maximum value；
After C4.2 obtains actual measurement IV curvilinear characteristic amount and model output IV curvilinear characteristic amount, failure classes are judged according to following process
Type: if operating point I=0 andIt is then open-circuit fault, otherwise excludes the failure and continue to judge other types；If Dmax> 1
Or Dmin< -1 is then shadow occlusion failure, otherwise excludes the failure and continue to judge other types；IfThen it is
Otherwise shorted diode fault excludes the failure and continues to judge other types；IfOrIt is then aging event
Barrier, otherwise excludes the failure and continues to judge other types；IfIt is then abnormal for inverter MPPT tracking, otherwise mark
Type is that power loses extremely.
8. a kind of diagnosing failure of photovoltaic array method based on IV curved scanning according to claim 1, it is characterised in that:
In step D, failure is assessed according to the deviation of actual measurement IV curvilinear characteristic amount and model output IV curvilinear characteristic amount, it is specific to walk
It is rapid as follows:
D1) if opening assessment of failure function and fault type is shadow occlusion failure, shadow occlusion degree is assessed, yin
Shadow coverage extent is described by two parameters, respectively equivalent light transmittance γ corresponding to the shadow region, is covered by shadow region
The number N of the substring coveredsbs, γ and NsubEvaluation method it is as follows:
γ evaluation method: it sets electric current in actual measurement IV curve and about the second order of voltage leads maximum value DmaxThe corresponding Current Voltage in place
Value is respectivelyWithThen
NsbsEvaluation method: N is acquired by solve system of equation (7)sbsNumerical solution and it is rounded；
D2) if opening assessment of failure function and fault type as bypass diode short trouble, bypass diode short circuit is estimated
Number Nds, estimate formula are as follows:
D3) if opening assessment of failure function and fault type is degradation failure, degree of aging is assessed, the degree is by two
A amount describes, respectively for embodying the amount H of equivalent series resistance increasesAnd for embodying equivalent parallel resistance reduction
Measure Hp, calculation method is respectivelyAndThe two is bigger to illustrate that degree of aging is more serious；
D4) if opening assessment of failure function and fault type as inverter MPPT tracking exception, tracing deviation is estimated,
It is described by two amounts, respectively tracking offset direction Dir and power loss Δ P, when operating point work is bent in actual measurement IV
Dir is -1 when the left side of line maximum power point, and the right is then 1；Δ P is the difference of maximum power point power and power of operating point；
D5 it) is lost extremely if opening assessment of failure function and fault type for power, calculates power loss Δ P.
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| CN111460644A (en) * | 2020-03-27 | 2020-07-28 | 河海大学常州校区 | Photovoltaic array monitoring system with fault diagnosis and power prediction functions |
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