CN108911747A - A kind of Ti doped type bismuth niobate rubidium piezoceramic material of silicon and preparation method thereof - Google Patents
A kind of Ti doped type bismuth niobate rubidium piezoceramic material of silicon and preparation method thereof Download PDFInfo
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Abstract
The invention discloses Ti doped type bismuth niobate rubidium piezoceramic materials of a kind of silicon and preparation method thereof.The Ti doped type bismuth niobate rubidium piezoceramic material of the silicon has following chemical general formula：Bi2.5Rb3.5Nb5‑x(SiTi)5x/8O18, wherein the numerical value of x is selected from any number between 0~0.2.The preparation method of the Ti doped type bismuth niobate rubidium piezoceramic material of the silicon include raw material weigh, ball milling, compacting, pre-burning, secondary ball milling, granulation, dumping, the processing steps such as firing.The Ti doped type bismuth niobate rubidium piezoceramic material of silicon of the invention, through detecting, piezoelectric constant is 43.5~48.6 pC/N, Curie temperature is 642~669 DEG C, mechanical quality factor, radial electromechanical coupling factor and dielectric loss are significantly improved, and have a good application prospect in high-temperature field.Using ceramic component made of this material, it can be assembled into various pyrostats, in terms of high temperature measurement, detection and automatic control with good application prospect.
Description
Technical field
The invention belongs to piezoceramic material fields, and in particular to a kind of Ti doped type bismuth niobate rubidium piezoelectric ceramics material of silicon
Material and preparation method thereof.
Background technique
Piezoelectric ceramics is a kind of electron ceramic material with piezoelectric property, with the typical pressure for not including ferroelectricity ingredient
The main distinction of electric quartz crystal is：The crystal phase for constituting its main component is all to have ferroelectric crystal grain.Since ceramics are brilliant
The polycrystalline aggregate of grain random orientation, therefore wherein the spontaneous polarization vector of each ferroelectricity crystal grain is also disorientation.In order to
Make ceramic energy show macroscopic view piezoelectric property, just must piezoelectric ceramics be burnt into and in end face by overlying electrode after, set
It is polarised under strong dc electric field, so that each spontaneous polarization vector of original disorientation preferentially takes along direction of an electric field
To.Piezoelectric ceramics after polarization process can retain certain macroscopical remanent polarization after electric field cancellation, thus
Ceramics are made to be provided with certain piezoelectric properties.Piezoelectric ceramics is changed as a kind of important functional material in non-destructive testing, ultrasound
The fields such as energy, sensor have a wide range of applications, and the hi tech and new material of a kind of international competition fierceness.
Different according to the crystal structure mainly formed, piezoceramic material can be divided into Ca-Ti ore type（Such as BaTiO3,
NaNbO3-KNbO3, Bi0.5Na0.5TiO3Deng）, bismuth layered-type（Such as Bi4Ti3O12, Bi2WO6, CaBi4Ti4O15Deng）, tungsten bronze type
（Such as SrxBa1–xNb2O6Ba2, NaNb5O15Deng）With burnt green stone-type（Such as Cd2Nb2O2, Cd2Ta2O7Deng）.Wherein, the pressure of bismuth layered-type
Electroceramics material is since its Curie temperature with higher, such as Curie temperature of bismuth-sodium titanate are more than 650 DEG C, therefore bismuth layered-type
Piezoceramic material obtained more and more applications.But the piezoelectric constant of the piezoceramic material of bismuth layered-type is usual
It is lower, if the piezoelectric constant of bismuth-sodium titanate is only 16 pC/N, at relatively high temperatures in use, its piezoelectric property is unable to reach and answers
With requiring.Therefore, how keep bismuth layered-type piezoceramic material relatively high-curie temperature while improve bismuth layered-type
Piezoceramic material piezoelectric constant, can meet under hot environment apply needs, become recent piezoelectric ceramics
The hot spot of Material Field research.
Summary of the invention
In view of the above-mentioned problems existing in the prior art and demand, the object of the present invention is to provide a kind of Ti doped type niobiums of silicon
Sour bismuth rubidium piezoceramic material and preparation method thereof, it is Ti doped by carrying out silicon, promote piezoceramic material in microcosmic point
The growth of crystal grain, promotes lattice to deform, so as to effectively improve the piezoelectric constant of piezoceramic material, while material
Mechanical quality factor, radial electromechanical coupling factor and dielectric loss are significantly improved.
Technical solution：To achieve the goals above, the present invention provides a kind of Ti doped type bismuth niobate rubidium piezoelectric ceramics of silicon
Material, the piezoceramic material have following chemical general formula：Bi2.5Rb3.5Nb5-x(SiTi)5x/8O18, the wherein numerical value choosing of x
From any number between 0~0.2.
Piezoceramic material of the invention is that have (Bi2O2)2+(Am-1BmO3m+1)2-The compound of structure
Bi2.5Rb3.5Nb5O18On the basis of, piezoceramic material is modified by carrying out B substitutions, obtained silicon is Ti doped
Type bismuth niobate rubidium piezoceramic material has the advantages that piezoelectric constant is high, Curie temperature is high.
Further, the numerical value of x is preferably 0.1.
Ti doped with ratio progress silicon, piezoelectric constant and Curie temperature can reach higher numerical value, obtained pressure
The comprehensive performance of electroceramics material is preferable.
Further, the piezoelectric constant of the piezoceramic material be 43.5~48.6 pC/N, Curie temperature be 642~
669℃。
On the other hand, the present invention also provides a kind of preparation method of the Ti doped type bismuth niobate rubidium piezoceramic material of silicon,
Include the following steps：
（1）Analysis on Selecting is pure or the Bi of excellent pure grade2O3、Rb2CO3、Nb2O5、SiO2And TiO2, according to Bi2.5Rb3.5Nb5-x
(SiTi)5x/8O18Chemical general formula calculate needed for each raw material quality, and accurately weigh, it is spare, wherein the numerical value of x be selected from 0~
Any number between 0.2；
（2）Weighed each raw material is placed in planetary ball mill, ball-milling medium is dehydrated alcohol and zirconium dioxide abrading-ball, is pressed
Ball milling is carried out according to 280~320 revs/min of rates, Ball-milling Time is 14~18 hours, after the completion of ball milling, the ball that will obtain
Mill mixture is placed in basin, and drying to constant weight at 80~90 DEG C；
（3）The dried material obtained after drying is suppressed, being pressed into diameter is 25 mm, with a thickness of the crude green body of 5 mm, then will
Crude green body carries out pre-burning, and calcined temperature is 820 DEG C, and burn-in time is 130~150 minutes, obtains pre-burned blank after cooling；
（4）Pre-burned blank is placed in grinding pot to grind, grinding product is rejoined in planetary ball mill, ball milling is situated between
Matter is dehydrated alcohol and zirconium dioxide abrading-ball, carries out secondary ball milling, secondary ball milling time according to 280~320 revs/min of rates
It is 8~10 hours, after the completion of ball milling, obtained ball-milled mixtures is fitted into basin, are dried to perseverance at 80~90 DEG C
Weight；
（5）Adhesive is added in the dried material obtained after to drying, is placed in pelletizer compacting and is granulated, obtaining diameter is 10 mm,
With a thickness of the thin base of 2.5 mm, then thin base is placed at 600 DEG C and keeps the temperature 90 minutes, completes the dumping behaviour of thin base after cooling
Make；
（6）Thin base after dumping is placed in high temperature sintering furnace and is fired, firing temperature is 1120~1180 DEG C, the firing time
It is 120~180 minutes, the Ti doped type bismuth niobate rubidium piezoceramic material of silicon is obtained after being cooled to room temperature.
Preparation method of the invention, cost of material is low, and technique is concise, is suitable for large-scale industrial production, is prepared
The Ti doped type bismuth niobate rubidium piezoceramic material of silicon piezoelectric constant and Curie temperature can reach higher numerical value, obtain
Piezoceramic material comprehensive performance it is preferable.
Further, chemical general formula Bi2.5Rb3.5Nb5-x(SiTi)5x/8O18The numerical value of middle x is preferably 0.1.
Further, the adhesive is preferably polyvinyl alcohol.
Further, the thin base after dumping is placed in be fired in high temperature sintering furnace when, oxygen is continually fed into furnace
Gas.
Further, the piezoelectric constant of the Ti doped type bismuth niobate rubidium piezoceramic material of the silicon being prepared be 43.5~
48.6 pC/N, Curie temperature are 642~669 DEG C.
Compared with prior art, the present invention has the advantages that：
（1）Why the present invention, which chooses, has (Bi2O2)2+(Am-1BmO3m+1)2-The compound Bi of structure2.5Rb3.5Nb5O18As
Basic material, for the Ti doped method of modifying of silicon of the invention, is only existed due to being found by a large number of experiments
Bi2.5Rb3.5Nb5O18On can realize preferable modified effect, in other (Bi2O2)2+(Am-1BmO3m+1)2-The bismuth stratiform of structure
It cannot achieve required effect on type piezoceramic material or even performance degenerated.This reason may be with
Bi2.5Rb3.5Nb5O18The specific crystal formation structure of material and the electron configuration of Rb element have close association, and Related Mechanism need to also be into one
Step research.
（2）The method that the present invention uses B substituting modifications substitutes the A position substitution technique generally taken to piezoelectric ceramics material
Material is modified, and the lattice of material can be promoted to deform in the growth of microcosmic point promotion piezoceramic material crystal grain, and
And polarization effect more better more in the past than the more efficiently A substitutions thought is achieved, the piezoelectric activity of material is sufficiently excited,
And maintain higher Curie temperature.
（3）The present invention is using metalloid element Si and transition metal Ti and replaces Bi2.5Rb3.5Nb5O18In transition metal
Elemental niobium is made using the peripheral electron of the cubic diamond type structure cell of Si and the hexagonal cells of Ti and two elements arrangement feature
Specific structure change has occurred in piezoceramic material lattice after must adulterating, effectively increases the piezoelectric activity of material, simultaneously
The mechanical quality factor of material, radial electromechanical coupling factor and dielectric loss are significantly improved.
（4）The Ti doped preparation method of silicon through the invention is to substitute the higher crystal grain orientation skill of traditional difficulty
Art avoids greatly improving for material preparation expense, has more market application prospect.
Specific embodiment
It is of the invention below by way of combining following specific embodiments to further illustrate.It should be pointed out that real in detail below
It applies mode for explaining only the invention, is not used to be defined the contents of the present invention.
The Ti doped type bismuth niobate rubidium piezoceramic material of silicon provided by the invention has following chemical general formula：
Bi2.5Rb3.5Nb5-x(SiTi)5x/8O18, wherein the numerical value of x is selected from any number between 0~0.2.
Further, the numerical value of x is preferably 0.1.
The titanium doped ratio of silicon determines the piezoelectric constant and Curie temperature of final material, needs the addition to doped chemical
Amount carries out considering and verifying repeatedly.For different doped chemicals, optimal doping ratio has marked difference, and does not have
It is regular to follow.It needs to carry out measurement and verifying repeatedly, finally constantly according to the difference of doped chemical during the test
The technical effect that can be obtained can not also be predicted in advance.
Further, the piezoelectric constant of the piezoceramic material be 43.5~48.6 pC/N, Curie temperature be 642~
669℃。
Although the piezoelectric constant and Curie temperature of piezoelectric ceramics of the invention are not the piezoelectricity pottery for being known bismuth layered-type
Peak in ceramic material, but effective raising, piezoelectric constant and residence have been obtained on the basis of original undoped material
In temperature be also held at one preferably can application range, while the mechanical quality factor of material, radial electromechanical coupling
Several and dielectric loss is significantly improved, and can satisfy the application in high-temperature field.It makes pottery using made of this material
Porcelain element can be assembled into various pyrostats, before having preferable application in terms of high temperature measurement, detection and the automatic control
Scape.
The present invention also provides the preparation methods of the Ti doped type bismuth niobate rubidium piezoceramic material of silicon, including walk as follows
Suddenly：
（1）Analysis on Selecting is pure or the Bi of excellent pure grade2O3、Rb2CO3、Nb2O5、SiO2And TiO2, according to Bi2.5Rb3.5Nb5-x
(SiTi)5x/8O18Chemical general formula calculate needed for each raw material quality, and accurately weigh, it is spare, wherein the numerical value of x be selected from 0~
Any number between 0.2；
（2）Weighed each raw material is placed in planetary ball mill, ball-milling medium is dehydrated alcohol and zirconium dioxide abrading-ball, is pressed
Ball milling is carried out according to 280~320 revs/min of rates, Ball-milling Time is 14~18 hours, after the completion of ball milling, the ball that will obtain
Mill mixture is placed in basin, and drying to constant weight at 80~90 DEG C；
（3）The dried material obtained after drying is suppressed, being pressed into diameter is 25 mm, with a thickness of the crude green body of 5 mm, then will
Crude green body carries out pre-burning, and calcined temperature is 820 DEG C, and burn-in time is 130~150 minutes, obtains pre-burned blank after cooling；
（4）Pre-burned blank is placed in grinding pot to grind, grinding product is rejoined in planetary ball mill, ball milling is situated between
Matter is dehydrated alcohol and zirconium dioxide abrading-ball, carries out secondary ball milling, secondary ball milling time according to 280~320 revs/min of rates
It is 8~10 hours, after the completion of ball milling, obtained ball-milled mixtures is fitted into basin, are dried to perseverance at 80~90 DEG C
Weight；
（5）Adhesive is added in the dried material obtained after to drying, is placed in pelletizer compacting and is granulated, obtaining diameter is 10 mm,
With a thickness of the thin base of 2.5 mm, then thin base is placed at 600 DEG C and keeps the temperature 90 minutes, completes the dumping behaviour of thin base after cooling
Make；
（6）Thin base after dumping is placed in high temperature sintering furnace and is fired, firing temperature is 1120~1180 DEG C, the firing time
It is 120~180 minutes, the Ti doped type bismuth niobate rubidium piezoceramic material of silicon is obtained after being cooled to room temperature.
By using the ball-milling medium in preparation method of the present invention, cooperate corresponding ball milling speed and Ball-milling Time, and
The operation of ball milling twice is taken, each component can be sufficiently milled into refinement, uniform powder, effectively improve piezoceramic material
Physicochemical property.
Pre-burned and fire respectively for different shape and conjugation material take 820 DEG C, 130~150 minutes and
1120~1180 DEG C, 120~180 minutes firing parameters, can make the abundant ablation of the oxygen element in oxide, the structure of material
Further optimized.
Further, chemical general formula Bi2.5Rb3.5Nb5-x(SiTi)5x/8O18The numerical value of middle x is preferably 0.1.
Further, the adhesive is preferably polyvinyl alcohol.
Further, the thin base after dumping is placed in be fired in high temperature sintering furnace when, oxygen is continually fed into furnace
Gas.
Further, the piezoelectric constant of the Ti doped type bismuth niobate rubidium piezoceramic material of the silicon being prepared be 43.5~
48.6 pC/N, Curie temperature are 642~669 DEG C.
Below by embodiment, the present invention is furture elucidated.It should be pointed out that the present invention is not intended to be limited to the reality
Apply example.
Embodiment 1
Preparing chemical formula is Bi2.5Rb3.5Nb4.95(SiTi)0.03125O18The Ti doped type bismuth niobate rubidium piezoceramic material of silicon.
Analysis on Selecting is pure or the Bi of excellent pure grade2O3、Rb2CO3、Nb2O5、SiO2And TiO2, according to Bi2.5Rb3.5Nb4.95
(SiTi)0.03125O18Chemical general formula calculate needed for each raw material quality, and accurately weigh, it is spare；By weighed each raw material
It is placed in planetary ball mill, ball-milling medium is dehydrated alcohol and zirconium dioxide abrading-ball, is carried out according to 300 revs/min of rates
Ball milling, Ball-milling Time are 16 hours, and after the completion of ball milling, obtained ball-milled mixtures are placed in basin, are dried at 85 DEG C
It does to constant weight；The dried material obtained after drying is suppressed, being pressed into diameter is 25 mm, with a thickness of the crude green body of 5 mm, then
Crude green body is subjected to pre-burning, calcined temperature is 820 DEG C, and burn-in time is 140 minutes, obtains pre-burned blank after cooling；It will be pre-
Firing blank is placed in grinding pot and is ground, and grinding product is rejoined in planetary ball mill, and ball-milling medium is anhydrous second
Pure and mild zirconium dioxide abrading-ball carries out secondary ball milling according to 300 revs/min of rates, and the secondary ball milling time is 9 hours, to ball milling
After the completion, obtained ball-milled mixtures are fitted into basin, drying to constant weight at 85 DEG C；The dried object obtained after to drying
Adhesive is added in material, is placed in pelletizer compacting and is granulated, obtaining diameter is that 10 mm then will be thin with a thickness of the thin base of 2.5 mm
Base is placed at 600 DEG C and keeps the temperature 90 minutes, completes the dumping operation of thin base after cooling；Thin base after dumping is placed in high temperature sintering
It is fired in furnace, firing temperature is 1150 DEG C, and the firing time is 150 minutes, and the Ti doped type of silicon is obtained after being cooled to room temperature
Bismuth niobate rubidium piezoceramic material S-1.
Embodiment 2
Preparing chemical formula is Bi2.5Rb3.5Nb4.9 (SiTi)0.0625O18The Ti doped type bismuth niobate rubidium piezoceramic material of silicon.
Analysis on Selecting is pure or the Bi of excellent pure grade2O3、Rb2CO3、Nb2O5、SiO2And TiO2, according to Bi2.5Rb3.5Nb4.9
(SiTi)0.0625O18Chemical general formula calculate needed for each raw material quality, and accurately weigh, it is spare；Weighed each raw material is set
In planetary ball mill, ball-milling medium is dehydrated alcohol and zirconium dioxide abrading-ball, carries out ball according to 300 revs/min of rates
Mill, Ball-milling Time are 16 hours, and after the completion of ball milling, obtained ball-milled mixtures are placed in basin, are dried at 85 DEG C
To constant weight；The dried material obtained after drying is suppressed, being pressed into diameter is 25 mm, with a thickness of the crude green body of 5 mm, then will
Crude green body carries out pre-burning, and calcined temperature is 820 DEG C, and burn-in time is 140 minutes, obtains pre-burned blank after cooling；By pre-burning
Base material is placed in grinding pot and is ground, and grinding product is rejoined in planetary ball mill, and ball-milling medium is dehydrated alcohol
With zirconium dioxide abrading-ball, secondary ball milling is carried out according to 300 revs/min of rates, the secondary ball milling time is 9 hours, complete to ball milling
Obtained ball-milled mixtures are fitted into basin by Cheng Hou, and drying to constant weight at 85 DEG C；The dried material obtained after to drying
Middle addition adhesive is placed in pelletizer compacting and is granulated, and obtaining diameter is 10 mm, with a thickness of the thin base of 2.5 mm, then by thin base
It is placed at 600 DEG C and keeps the temperature 90 minutes, complete the dumping operation of thin base after cooling；Thin base after dumping is placed in high temperature sintering furnace
In be fired, firing temperature be 1150 DEG C, the firing time be 150 minutes, the Ti doped type niobium of silicon is obtained after being cooled to room temperature
Sour bismuth rubidium piezoceramic material S-2.
Embodiment 3
Preparing chemical formula is Bi2.5Rb3.5Nb4.85(SiTi)0.09375O18The Ti doped type bismuth niobate rubidium piezoceramic material of silicon.
Analysis on Selecting is pure or the Bi of excellent pure grade2O3、Rb2CO3、Nb2O5、SiO2And TiO2, according to Bi2.5Rb3.5Nb4.85
(SiTi)0.09375O18Chemical general formula calculate needed for each raw material quality, and accurately weigh, it is spare；By weighed each raw material
It is placed in planetary ball mill, ball-milling medium is dehydrated alcohol and zirconium dioxide abrading-ball, is carried out according to 300 revs/min of rates
Ball milling, Ball-milling Time are 16 hours, and after the completion of ball milling, obtained ball-milled mixtures are placed in basin, are dried at 85 DEG C
It does to constant weight；The dried material obtained after drying is suppressed, being pressed into diameter is 25 mm, with a thickness of the crude green body of 5 mm, then
Crude green body is subjected to pre-burning, calcined temperature is 820 DEG C, and burn-in time is 140 minutes, obtains pre-burned blank after cooling；It will be pre-
Firing blank is placed in grinding pot and is ground, and grinding product is rejoined in planetary ball mill, and ball-milling medium is anhydrous second
Pure and mild zirconium dioxide abrading-ball carries out secondary ball milling according to 300 revs/min of rates, and the secondary ball milling time is 9 hours, to ball milling
After the completion, obtained ball-milled mixtures are fitted into basin, drying to constant weight at 85 DEG C；The dried object obtained after to drying
Adhesive is added in material, is placed in pelletizer compacting and is granulated, obtaining diameter is that 10 mm then will be thin with a thickness of the thin base of 2.5 mm
Base is placed at 600 DEG C and keeps the temperature 90 minutes, completes the dumping operation of thin base after cooling；Thin base after dumping is placed in high temperature sintering
It is fired in furnace, firing temperature is 1150 DEG C, and the firing time is 150 minutes, and the Ti doped type of silicon is obtained after being cooled to room temperature
Bismuth niobate rubidium piezoceramic material S-3.
Performance test
Obtained silicon Ti doped type bismuth niobate rubidium piezoceramic material S-1, S-2, S-3 are carried out after surface polishing on its surface
Coating silver electrode, the DC electric field for then applying 8 kV/mm in 180 DEG C of silicone oil carry out artificial polarization, survey after placing 24 hours
Try its performance indexes.
Table 1
| d33（pC/N） | Tc（℃） | Qm | kp（%） | tanδ（%） | |
| S-1 | 43.9 | 644 | 3230 | 11 | 0.23 |
| S-2 | 48.6 | 669 | 3410 | 13 | 0.20 |
| S-3 | 44.3 | 653 | 3180 | 12 | 0.26 |
| Bi2.5Rb3.5Nb5O18 | 20.7 | 730 | 2480 | 9 | 0.33 |
As can be seen from the above table, bismuth niobate rubidium piezoceramic material is changed by using the Ti doped method of silicon of the invention
After property, the Ti doped type bismuth niobate rubidium piezoceramic material of obtained silicon piezoelectric constant, Curie temperature, mechanical quality factor,
Radial electromechanical coupling factor and dielectric loss are significantly improved, and illustrate doped chemical selected by the present invention, doping
Ratio and doping modification method achieve good technical effect, and the Ti doped type bismuth niobate rubidium piezoceramic material of the silicon is in height
Warm field has a good application prospect.Using ceramic component made of this material, it can be assembled into various pyrostats,
High temperature measurement, detection and automatic control aspect are with good application prospect.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.
Claims (8)
1. a kind of Ti doped type bismuth niobate rubidium piezoceramic material of silicon, which is characterized in that the piezoceramic material has such as
Under chemical general formula：Bi2.5Rb3.5Nb5-x(SiTi)5x/8O18, wherein the numerical value of x is selected from any number between 0~0.2.
2. the Ti doped type bismuth niobate rubidium piezoceramic material of silicon as described in claim 1, which is characterized in that the numerical value of x is excellent
It is selected as 0.1.
3. the Ti doped type bismuth niobate rubidium piezoceramic material of silicon as claimed in claim 1 or 2, which is characterized in that the pressure
The piezoelectric constant of electroceramics material is 43.5~48.6 pC/N, and Curie temperature is 642~669 DEG C.
4. a kind of preparation method of the Ti doped type bismuth niobate rubidium piezoceramic material of silicon, which is characterized in that include the following steps：
（1）Analysis on Selecting is pure or the Bi of excellent pure grade2O3、Rb2CO3、Nb2O5、SiO2And TiO2, according to Bi2.5Rb3.5Nb5-x
(SiTi)5x/8O18Chemical general formula calculate needed for each raw material quality, and accurately weigh, it is spare, wherein the numerical value of x be selected from 0~
Any number between 0.2；
（2）Weighed each raw material is placed in planetary ball mill, ball-milling medium is dehydrated alcohol and zirconium dioxide abrading-ball, is pressed
Ball milling is carried out according to 280~320 revs/min of rates, Ball-milling Time is 14~18 hours, after the completion of ball milling, the ball that will obtain
Mill mixture is placed in basin, and drying to constant weight at 80~90 DEG C；
（3）The dried material obtained after drying is suppressed, being pressed into diameter is 25 mm, with a thickness of the crude green body of 5 mm, then will
Crude green body carries out pre-burning, and calcined temperature is 820 DEG C, and burn-in time is 130~150 minutes, obtains pre-burned blank after cooling；
（4）Pre-burned blank is placed in grinding pot to grind, grinding product is rejoined in planetary ball mill, ball milling is situated between
Matter is dehydrated alcohol and zirconium dioxide abrading-ball, carries out secondary ball milling, secondary ball milling time according to 280~320 revs/min of rates
It is 8~10 hours, after the completion of ball milling, obtained ball-milled mixtures is fitted into basin, are dried to perseverance at 80~90 DEG C
Weight；
（5）Adhesive is added in the dried material obtained after to drying, is placed in pelletizer compacting and is granulated, obtaining diameter is 10 mm,
With a thickness of the thin base of 2.5 mm, then thin base is placed at 600 DEG C and keeps the temperature 90 minutes, completes the dumping behaviour of thin base after cooling
Make；
（6）Thin base after dumping is placed in high temperature sintering furnace and is fired, firing temperature is 1120~1180 DEG C, the firing time
It is 120~180 minutes, the Ti doped type bismuth niobate rubidium piezoceramic material of silicon is obtained after being cooled to room temperature.
5. the preparation method of the Ti doped type bismuth niobate rubidium piezoceramic material of silicon as claimed in claim 4, which is characterized in that
Chemical general formula Bi2.5Rb3.5Nb5-x(SiTi)5x/8O18The numerical value of middle x is preferably 0.1.
6. the preparation method of the Ti doped type bismuth niobate rubidium piezoceramic material of silicon as claimed in claim 4, which is characterized in that
The adhesive is preferably polyvinyl alcohol.
7. the preparation method of the Ti doped type bismuth niobate rubidium piezoceramic material of silicon as claimed in claim 4, which is characterized in that
The thin base after dumping is placed in be fired in high temperature sintering furnace when, oxygen is continually fed into furnace.
8. the preparation method of the Ti doped type bismuth niobate rubidium piezoceramic material of silicon as claimed in claim 4, feature exist
In the piezoelectric constant of the Ti doped type bismuth niobate rubidium piezoceramic material of the silicon being prepared is 43.5~48.6 pC/N, Curie
Temperature is 642~669 DEG C.
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| WO2020133575A1 (en) * | 2018-12-29 | 2020-07-02 | 昆明理工大学 | Zirconia/titanium oxide/cerium oxide doped rare earth tantalum/niobate reta/nbo4 ceramic powder and preparation method therefor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020133575A1 (en) * | 2018-12-29 | 2020-07-02 | 昆明理工大学 | Zirconia/titanium oxide/cerium oxide doped rare earth tantalum/niobate reta/nbo4 ceramic powder and preparation method therefor |
| JP2022519012A (en) * | 2018-12-29 | 2022-03-18 | 昆明理工大学 | Rare earth tantalum / niobate RETa / NbO4 ceramic powder doped with zirconia / titanium oxide / cerium oxide and its manufacturing method |
| JP7220794B2 (en) | 2018-12-29 | 2023-02-10 | 昆明理工大学 | Rare earth tantalum/niobate RETa/NbO4 ceramic powder doped with zirconia/titanium oxide/cerium oxide and method for producing the same |
| US11584692B2 (en) | 2018-12-29 | 2023-02-21 | Kunming University Of Science And Technology | Zirconia/titanium oxide/cerium oxide doped rare earth tantalum/niobate RETa/NbO4 ceramic powder and preparation method thereof |
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