CN108878516A - A kind of two-dimensional material field effect transistor of transverse structure and its preparation method and application - Google Patents
A kind of two-dimensional material field effect transistor of transverse structure and its preparation method and application Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 93
- 230000005669 field effect Effects 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 20
- 150000003346 selenoethers Chemical class 0.000 claims abstract description 7
- 229910052976 metal sulfide Inorganic materials 0.000 claims abstract description 6
- 238000004073 vulcanization Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 33
- 235000016768 molybdenum Nutrition 0.000 claims description 26
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 25
- 229910052750 molybdenum Inorganic materials 0.000 claims description 24
- 239000011733 molybdenum Substances 0.000 claims description 24
- 239000011241 protective layer Substances 0.000 claims description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 16
- 239000010937 tungsten Substances 0.000 claims description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 7
- CFJRPNFOLVDFMJ-UHFFFAOYSA-N titanium disulfide Chemical group S=[Ti]=S CFJRPNFOLVDFMJ-UHFFFAOYSA-N 0.000 claims description 7
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 239000011669 selenium Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- SDDGNMXIOGQCCH-UHFFFAOYSA-N 3-fluoro-n,n-dimethylaniline Chemical compound CN(C)C1=CC=CC(F)=C1 SDDGNMXIOGQCCH-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 5
- 239000004408 titanium dioxide Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 230000001404 mediated effect Effects 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- KVXHGSVIPDOLBC-UHFFFAOYSA-N selanylidenetungsten Chemical class [Se].[W] KVXHGSVIPDOLBC-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
The invention belongs to micro-nano electronic technology fields, disclose a kind of two-dimensional material field effect transistor and its preparation method and application of transverse structure, the two-dimensional material field effect transistor successively includes substrate, dielectric layer, metal electrode and two-dimensional material from bottom to top, and the two-dimensional material is metal sulfide or metal selenide；So that the middle section of metal is formed two-dimensional material by vulcanization or selenizing method, makes to form covalent bond between two-dimensional material and metal electrode, be effectively formed Ohmic contact.The preparation method of the two-dimensional material field effect transistor of the transverse structure have easy to operate, processing step is few, it is high-efficient, be effectively formed Ohmic contact, reduce the contact berrier of two-dimensional material and metal electrode, improve the electric property of device.
Description
Technical field
The invention belongs to micro-nano electronic technology fields, more particularly, to a kind of two-dimensional material field-effect of transverse structure
Transistor and its preparation method and application.
Background technique
Since occurring using graphene as the two-dimensional material of representative, since it is with distinguished electricity, optics, magnetics
And mechanical property, attract people largely widely to pay close attention to and study.As the supplement of graphene, two-dimentional transition metal sulfur family
Compound often has certain band gap and unique mechanical, the physical properties such as optically and electrically, is increasingly becoming emerging two-dimentional material
Material system, the research of two-dimensional material field effect transistor are also increasingly prosperous.However, due to fermi level pinning effect influence with
And two-dimensional material is difficult to the characteristics of heavy doping, often there is Schottky barrier in contact of the two-dimensional material with metal electrode, this is at certain
The electric property of two-dimensional material field effect transistor is affected in kind degree.Therefore, the Schottky gesture of field effect transistor is reduced
Building to obtain Ohmic contact is the target that researchers pursue.
Summary of the invention
In order to solve above-mentioned the shortcomings of the prior art and disadvantage, the primary purpose of the present invention is that providing a kind of transverse direction
The two-dimensional material field effect transistor of structure.The two-dimensional material field effect transistor can make between two-dimensional material and metal electrode
Covalent bond is formed, Ohmic contact is effectively formed, the contact berrier of two-dimensional material and metal electrode is reduced, improves the electricity of device
Learn performance.
Another object of the present invention is to provide the preparation methods of the two-dimensional material field effect transistor of above-mentioned transverse structure.
This method is easy to operate, processing step is few, high-efficient.
A further object of the present invention is to provide the applications of above-mentioned two-dimensional material field effect transistor.
The purpose of the present invention is realized by following technical proposals：
A kind of two-dimensional material field effect transistor of transverse structure, the two-dimensional material field effect transistor from bottom to top according to
Secondary includes substrate, dielectric layer, metal electrode and two-dimensional material, and the two-dimensional material is metal sulfide or metal selenide；It is logical
Over cure method or selenizing method make the middle section of metal form two-dimensional material, make to be formed altogether between two-dimensional material and metal electrode
Valence link is effectively formed Ohmic contact.
Preferably, the substrate be silicon or germanium, the dielectric layer be hafnium oxide or zirconium dioxide, the metal electrode and
Metal is titanium, molybdenum or tungsten, and the metal sulfide is titanium disulfide, molybdenum disulfide or tungsten disulfide, the metal selenide
For two selenizing titaniums, two selenizing molybdenums or two tungsten selenides.
Preferably, the metal electrode with a thickness of 10~100nm.
The preparation method of the two-dimensional material field effect transistor of the transverse structure, comprises the following specific steps that：
S1. chemical vapour deposition technique is used, first plates dielectric layer on substrate；
S2. one layer of metal is plated on dielectric layer；
S3. up-protective layer is plated at the both ends of metal；
S4. above-mentioned sample is put into the tube furnace full of sulfur vapor or selenium steam, makes the middle section of metal by sulphur
Change or selenizing form the two-dimensional material of metal sulfide or metal selenide；
S5. protective layer is removed, metal does not cure or the both ends of selenizing can serve as metal electrode, forms transverse structure
Two-dimensional material field effect transistor.
Preferably, protective layer described in step S3 is silica or aluminium oxide.
Application of the two-dimensional material field effect transistor of the transverse structure in micro-nano electronic technology field.
Compared with prior art, the invention has the advantages that：
1. two-dimensional material field effect transistor of the present invention can make to form covalent bond between two-dimensional material and metal electrode, have
Effect ground forms Ohmic contact, reduces the contact berrier of two-dimensional material and metal electrode, improves the electric property of device.
2. the preparation method of the two-dimensional material field effect transistor of transverse structure of the present invention is easy to operate, processing step is few,
It is high-efficient.
Detailed description of the invention
Fig. 1 is the cross section structure schematic diagram of the two-dimensional material field effect transistor of transverse structure in embodiment 1.
Fig. 2 is the preparation method flow chart of the two-dimensional material field effect transistor of transverse structure in embodiment 1.
Specific embodiment
The contents of the present invention are further illustrated combined with specific embodiments below, but should not be construed as limiting the invention.
Unless otherwise specified, the conventional means that technological means used in embodiment is well known to those skilled in the art.Except non-specifically
Illustrate, reagent that the present invention uses, method and apparatus is the art conventional reagents, method and apparatus.
Embodiment 1
A kind of two-dimensional material field effect transistor of transverse structure, successively there is substrate silicon 1, dielectric layer titanium dioxide from bottom to top
Hafnium 2, metal electrode titanium 3, two-dimensional material titanium disulfide 4, as shown in Figure 1.The middle section of Titanium is formed by vulcanization
Two-dimensional material titanium disulfide makes to form covalent bond between two-dimensional material titanium disulfide and metal electrode titanium, is effectively formed ohm
Contact.
The preparation method of the two-dimensional material field effect transistor of above-mentioned transverse structure, as shown in Fig. 2, including following step
Suddenly：
The first step first plates dielectric layer 2 using chemical vapor deposition method on substrate 1, then layer 2 is being mediated to be used above
Electron beam evaporation method plates one layer of metal 3；Wherein, 1 material therefor of substrate is silicon, and 2 material therefor of dielectric layer is hafnium oxide, gold
Belonging to 3 is titanium, and the thickness of titanium is 10nm.
Second step plates 5 silica of up-protective layer at the both ends of metal 3.
Third step is put sample into the tube furnace full of sulfur vapor, the middle section of 3 titanium of metal is vulcanized, shape
At two-dimensional material titanium disulfide 4.
4th step removes protective layer 5, and the both ends of not sulfureted 3 titanium of metal can serve as metal electrode, ultimately form cross
To the titanium disulfide field effect transistor of structure.
Embodiment 2
A kind of two-dimensional material field effect transistor of transverse structure, successively there is substrate germanium 1, dielectric layer titanium dioxide from bottom to top
Zirconium 2, metal electrode molybdenum 3, two selenizing molybdenum 4 of two-dimensional material, as shown in Figure 1.The middle section of metal molybdenum is formed by selenizing method
Two selenizing molybdenum of two-dimensional material makes to form covalent bond between two selenizing molybdenum of two-dimensional material and metal electrode molybdenum, is effectively formed ohm
Contact.
The preparation method of the two-dimensional material field effect transistor of above-mentioned transverse structure, as shown in Fig. 2, including following step
Suddenly：
The first step, first using one layer of metal 3 of plating above chemical vapor deposition method plating dielectric layer 2 on substrate 1；Wherein,
1 material therefor of substrate is germanium, and 2 material therefor of dielectric layer is zirconium dioxide, and metal 3 is molybdenum, and the thickness of molybdenum is 100nm.
Second step plates 5 aluminium oxide of up-protective layer at the both ends of metal 3.
Third step is put sample into the tube furnace full of selenium steam, and the middle section of 3 molybdenum of metal is carried out selenizing, shape
At 4 two selenizing molybdenum of two-dimensional material.
4th step removes protective layer 5, can not serve as metal electrode by the both ends of 3 molybdenum of the metal of selenizing, ultimately form cross
To two selenizing molybdenum field effect transistors of structure.
Embodiment 3
A kind of two-dimensional material field effect transistor of transverse structure, successively there is substrate germanium 1, dielectric layer titanium dioxide from bottom to top
Zirconium 2, metal electrode molybdenum 3, two tungsten selenide 4 of two-dimensional material, as shown in Figure 1.The middle section of tungsten is formed by selenizing method
Two tungsten selenide of two-dimensional material makes to form covalent bond between two tungsten selenide of two-dimensional material and metal electrode tungsten, is effectively formed ohm
Contact.
The preparation method of the two-dimensional material field effect transistor of above-mentioned transverse structure, as shown in Fig. 2, including following step
Suddenly：
The first step, first using one layer of metal 3 of plating above chemical vapor deposition method plating dielectric layer 2 on substrate 1；Wherein,
1 material therefor of substrate is germanium, and 2 material therefor of dielectric layer is zirconium dioxide, and metal 3 is tungsten, and the thickness of tungsten is 50nm.
Second step plates 5 aluminium oxide of up-protective layer at the both ends of metal 3.
Third step is put sample into the tube furnace full of selenium steam, and the middle section of 3 tungsten of metal is carried out selenizing, shape
At 4 two tungsten selenide of two-dimensional material.
4th step removes protective layer 5, can not serve as metal electrode by the both ends of 3 tungsten of the metal of selenizing, ultimately form cross
To two tungsten selenide field effect transistors of structure.
Embodiment 4
A kind of two-dimensional material field effect transistor of transverse structure, successively there is substrate silicon 1, dielectric layer titanium dioxide from bottom to top
Hafnium 2, metal electrode molybdenum 3, two-dimensional material molybdenum disulfide 4, as shown in Figure 1.The middle section of metal molybdenum is formed by vulcanization
Two-dimensional material molybdenum disulfide makes to form covalent bond between two-dimensional material molybdenum disulfide and metal electrode molybdenum, is effectively formed ohm
Contact.
The preparation method of the two-dimensional material field effect transistor of above-mentioned transverse structure, as shown in Fig. 2, including following step
Suddenly：
The first step first plates dielectric layer 2 using chemical vapor deposition method on substrate 1, then layer 2 is being mediated to be used above
Electron beam evaporation method plates one layer of metal 3；Wherein, 1 material therefor of substrate is silicon, and 2 material therefor of dielectric layer is hafnium oxide, gold
Belonging to 3 is molybdenum, and the thickness of molybdenum is 30nm.
Second step plates 5 silica of up-protective layer at the both ends of 3 molybdenum of metal.
Third step is put sample into the tube furnace full of sulfur vapor, the middle section of 3 molybdenum of metal is vulcanized, shape
At two-dimensional material molybdenum disulfide 4.
4th step removes protective layer 5, and the both ends of not sulfureted 3 molybdenum of metal can serve as metal electrode, ultimately form cross
To the molybdenum disulfide field effect transistor of structure.
Embodiment 5
A kind of two-dimensional material field effect transistor of transverse structure, successively there is substrate germanium 1, dielectric layer titanium dioxide from bottom to top
Zirconium 2, metal electrode tungsten 3, two-dimensional material tungsten disulfide 4, as shown in Figure 1.The middle section of tungsten is formed by vulcanization
Two-dimensional material tungsten disulfide makes to form covalent bond between two-dimensional material tungsten disulfide and metal electrode tungsten, is effectively formed ohm
Contact.
The preparation method of the two-dimensional material field effect transistor of above-mentioned transverse structure, as shown in Fig. 2, including following step
Suddenly：
The first step first plates dielectric layer 2 using chemical vapor deposition method on substrate 1, then layer 2 is being mediated to be used above
Electron beam evaporation method plates one layer of metal 3；Wherein, 1 material therefor of substrate is germanium, and 2 material therefor of dielectric layer is zirconium dioxide, gold
Belonging to 3 is tungsten, and the thickness of tungsten is 80nm.
Second step plates 5 aluminium oxide of up-protective layer at the both ends of 3 molybdenum of metal.
Third step is put sample into the tube furnace full of sulfur vapor, the middle section of 3 tungsten of metal is vulcanized, shape
At two-dimensional material tungsten disulfide 4.
4th step removes protective layer 5, and the both ends of not sulfureted 3 tungsten of metal can serve as metal electrode, ultimately form cross
To the tungsten disulfide field effect transistor of structure.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by change, modification, substitution, combination and simplify,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (6)
1. a kind of two-dimensional material field effect transistor of transverse structure, which is characterized in that the two-dimensional material field effect transistor
It from bottom to top successively include substrate, dielectric layer, metal electrode and two-dimensional material, the two-dimensional material is metal sulfide or metal
Selenides；So that the middle section of metal is formed two-dimensional material by vulcanization or selenizing method, makes two-dimensional material and metal electrode
Between form covalent bond, be effectively formed Ohmic contact.
2. the two-dimensional material field effect transistor of transverse structure according to claim 1, which is characterized in that the substrate is
Silicon or germanium, the dielectric layer are hafnium oxide or zirconium dioxide, and the metal electrode and metal are titanium, molybdenum or tungsten, the gold
Category sulfide is titanium disulfide, molybdenum disulfide or tungsten disulfide, and the metal selenide is two selenizing titaniums, two selenizing molybdenums or two selenium
Change tungsten.
3. the two-dimensional material field effect transistor of transverse structure according to claim 1, which is characterized in that the metal electricity
Pole with a thickness of 10~100nm.
4. the preparation method of the two-dimensional material field effect transistor of transverse structure according to claim 1-3,
It is characterized in that, comprises the following specific steps that：
S1. chemical vapour deposition technique is used, first plates dielectric layer on substrate；
S2. one layer of metal is plated on dielectric layer；
S3. up-protective layer is plated at the both ends of metal；
S4. above-mentioned sample is put into the tube furnace full of sulfur vapor or selenium steam, make the middle section of metal cure or
Person's selenizing forms the two-dimensional material of metal sulfide or metal selenide；
S5. protective layer is removed, metal does not cure or the both ends of selenizing can serve as metal electrode, forms the two of transverse structure
Tie up material field effect transistor.
5. the preparation method of the two-dimensional material field effect transistor of transverse structure according to claim 4, which is characterized in that
Protective layer described in step S3 is silica or aluminium oxide.
6. the two-dimensional material field effect transistor of the described in any item transverse structures of claim 1-3 is in micro-nano electronic technology field
In application.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111245416A (en) * | 2020-01-17 | 2020-06-05 | 北京科技大学 | Two-dimensional horizontal homojunction self-driven logic photoelectric switch and preparation method thereof |
| CN111293091A (en) * | 2020-02-07 | 2020-06-16 | 复旦大学 | Preparation method of biochemical sensing module based on two-dimensional material |
| CN114152857A (en) * | 2021-12-07 | 2022-03-08 | 华东师范大学 | Preparation method of two-dimensional material field effect transistor failure sample |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111245416A (en) * | 2020-01-17 | 2020-06-05 | 北京科技大学 | Two-dimensional horizontal homojunction self-driven logic photoelectric switch and preparation method thereof |
| CN111245416B (en) * | 2020-01-17 | 2022-04-05 | 北京科技大学 | Two-dimensional horizontal homojunction self-driven logic photoelectric switch and preparation method thereof |
| CN111293091A (en) * | 2020-02-07 | 2020-06-16 | 复旦大学 | Preparation method of biochemical sensing module based on two-dimensional material |
| CN111293091B (en) * | 2020-02-07 | 2022-06-21 | 复旦大学 | Preparation method of biochemical sensing module based on two-dimensional material |
| CN114152857A (en) * | 2021-12-07 | 2022-03-08 | 华东师范大学 | Preparation method of two-dimensional material field effect transistor failure sample |
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