CN108847432A - A kind of process for etching for polysilicon diamond wire slice - Google Patents
A kind of process for etching for polysilicon diamond wire slice Download PDFInfo
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- CN108847432A CN108847432A CN201810654704.9A CN201810654704A CN108847432A CN 108847432 A CN108847432 A CN 108847432A CN 201810654704 A CN201810654704 A CN 201810654704A CN 108847432 A CN108847432 A CN 108847432A
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- silicon
- hole
- etching
- polysilicon
- chip surface
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 23
- 238000005530 etching Methods 0.000 title claims abstract description 22
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 18
- 239000010432 diamond Substances 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000010703 silicon Substances 0.000 claims abstract description 61
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 28
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 26
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000003513 alkali Substances 0.000 claims abstract description 12
- 238000001035 drying Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 4
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims abstract description 4
- 238000005554 pickling Methods 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000009941 weaving Methods 0.000 claims abstract description 4
- 238000002310 reflectometry Methods 0.000 claims description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 229910021645 metal ion Inorganic materials 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000006056 electrooxidation reaction Methods 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 229910003638 H2SiF6 Inorganic materials 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000005238 degreasing Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910021426 porous silicon Inorganic materials 0.000 claims description 3
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000005520 cutting process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of process for etching for polysilicon diamond wire slice, the first step, into piece：Polysilicon chip is put into wool-weaving machine；Second step, alkali are thrown：Using silicon, anisotropic reactive in silicon chip surface forms protrusion in KOH, and third step is silver-plated：Ag+Electronics is obtained from the valence band of silicon, Ag particle realizes occupy-place, the 4th step, borehole in silicon face：Under the action of hydrofluoric acid and hydrogen peroxide, it is formed on its surface nanoscale hole hole；5th step, the desilverization：Remove silicon chip surface silver ion；6th step, reaming：Nanoscale hole hole flannelette after making borehole expands, the 7th step, alkali cleaning：Surface is rinsed using the alkali of high concentration, the 8th step, deburring：Using hypochlorous strong oxidizing property rinsed surfaces burr, hillock shape and pyramid structure, it is in addition to this also accompanied by desilverization function；9th step, pickling：Hydrofluoric acid is mainly hydrophobic to silicon chip surface；Tenth step, drying：Using the water of hot bellows drying silicon chip surface, the photoelectric conversion efficiency of cell piece is greatly improved.
Description
Technical field
The present invention relates to polysilicon solar cell field, a kind of specific making herbs into wool work for polysilicon diamond wire slice
Skill.
Background technique
It is the tireless pursuit of photovoltaic practitioner that drop, which originally proposes effect, and at silicon wafer end, diamond wire microtomy has been shown very
Big advantage.Monocrystalline silicon piece relies on the large-scale application of Buddha's warrior attendant line cutting technology, and manufacturing cost is greatly reduced, and polycrystalline market is thus
It is squeezed, is further increased so that this pressure drops in polysilicon chip.However, polysilicon chip when using Buddha's warrior attendant wire cutting, passes through
After conventional process for etching, surface reflectivity is higher and has the open defects such as apparent stria, seriously reduces battery efficiency, hinders
Diamond wire cuts the large-scale promotion of polysilicon chip.Therefore, major obstacle of the diamond wire for polysilicon chip cutting is electricity at present
The matching of pond process for etching, how to solve the problems, such as diamond wire cut polysilicon chip conventional acid making herbs into wool reflectivity it is excessively high become for a long time with
Carry out insoluble technical problem, in view of the foregoing, now researches and develops a kind of process for etching for polysilicon diamond wire slice.
Summary of the invention
Purpose of the invention is to overcome the shortcomings in the prior art, provide it is a kind of for polysilicon diamond wire slice
Process for etching, this problem of very good solution, due to the reduction of surface reflectivity, silicon wafer light absorpting ability is promoted, is improved
Utilization of the silicon wafer to sunlight improves the electric current of battery-end effectively to promote battery overall conversion efficiency, technical process
Stablize, convenient for control.
The present invention to achieve the goals above, adopts the following technical scheme that：A kind of system for polysilicon diamond wire slice
Suede technique,
The first step, into piece：Polysilicon chip is put into wool-weaving machine；
Second step, alkali are thrown：It is acted on using the auxiliary making herbs into wool of silicon anisotropic reactive and texturing assistant agent in KOH, in silicon
Piece surface forms the hillock shape and pyramid structure of protrusion, while degreasing and mechanical damage layer；
Third step, it is silver-plated：Utilize Ag/Ag+System capacity is far below the valence band edge of silicon, Ag+Electricity is obtained from the valence band of silicon
Son, to be reduced, Ag particle realizes occupy-place in silicon face, is uniformly adhered to silicon chip surface, Ag++e-=Ag, Si+6HF=
H2SiF6+2H2；
4th step, borehole：Under the action of hydrofluoric acid and hydrogen peroxide, electrochemistry occurs for metal ion and contacted silicon atom
Silver nano-grain is injected into the hole on crystal silicon surface by corrosion to directional etching silicon wafer, accelerates directional etching, on its surface
It forms nanoscale microstructure and forms sunken luminous effect composition nanoscale hole hole；
5th step, the desilverization：Complex compound, which is formed, using ammonium hydroxide, hydrogen peroxide and silver ion removes silicon chip surface silver ion；
6th step, reaming：Nanoscale hole hole flannelette after making borehole expands, and increases the absorption of light；
7th step, alkali cleaning：The porous silicon and surface spikes, hillock shape and pyramid structure of the covering of reaming rear surface are cleaned,
Surface is rinsed using the alkali of high concentration, utilizes OH-Silicon anisotropic etching is corroded, is washed due to anti-inside acid
Surface spikes, hillock shape and the pyramid structure that should be left；
8th step, deburring：The hydrochloric acid and hydrogen peroxide of high concentration, using hypochlorous strong oxidizing property rinsed surfaces burr,
In addition to this hillock shape and pyramid structure are also accompanied by desilverization function；
9th step, pickling：Foreign ion is mainly removed using hydrochloric acid, hydrofluoric acid is mainly hydrophobic to silicon chip surface；
Tenth step, drying：Utilize the water of hot bellows drying silicon chip surface.
In silicon chip surface after above ten processes, the uniform hole of openings of sizes is finally produced, the depth is uniformly low
Reflectivity nanoscale hole hole flannelette, the opening diameter in the hole is at 400-500 nanometers, 350-400 nanometers of hole depth, reflectivity
18-20。
Described 350-400 nanometers of conditions of hole depth under conditions of time 180-220S is interior, are led at 33 DEG C -35 DEG C of temperature
Cross texturing assistant agent and uniformly plate one layer of metal ion in silicon chip surface, under the action of hydrofluoric acid, hydrogen peroxide metal ion with
Electrochemical corrosion occurs for contacted silicon atom to longitudinal corrosion of silicon, is formed on its surface nanoscale microstructure.
The 400-500 nanometers of conditions of opening diameter in the hole are the conditions of time 120-150S at 8 DEG C -10 DEG C of temperature
Under, by 350-400 nanometers of hole depth of pieces under the action of hydrofluoric acid, nitric acid lateral encroaching, make its nanoscale hole hole opening reach
To technique requirement, the microcosmic flannelette of satisfactory antiradar reflectivity is finally produced, the range of reflectivity is 18-20.
The beneficial effects of the invention are as follows：The present invention uses metal ion catalysis chemical attack, makes size in silicon chip surface
Uniform nanoscale hole hole reduces silicon wafer wool making back reflection rate, and increase sunlight utilizes promotion photoelectric conversion efficiency；Well
Solves this problem, due to the reduction of surface reflectivity, silicon wafer light absorpting ability is promoted, and improves silicon wafer to the benefit of sunlight
With improving the electric current of battery-end effectively to promote battery overall conversion efficiency, stable technical process is full convenient for control
Sufficient mass production, year-on-year cell piece transfer efficiency promote 0.3%, and this method very good solution diamond wire cuts polysilicon chip system
Problem of appearance and the relatively low problem of efficiency after suede；Since raw material are sliced and the promotion of efficiency is greatly saved using diamond wire
Manufacturing cost, therefore, proposition implementation of the invention can reduce silicon wafer cost but also promote battery efficiency, be that polycrystalline battery continues
Progressive only way.
Detailed description of the invention
The present invention will be further explained below with reference to the attached drawings：
Fig. 1 is the process for etching flow chart for polysilicon diamond wire slice；
Fig. 2 is injected into silver nano-grain in the hole on crystal silicon surface, and directional etching is accelerated；
Fig. 3 is reaming effect diagram；
Fig. 4 is the microcosmic suede structure schematic diagram of antiradar reflectivity.
Specific embodiment
Below with reference to embodiment, invention is further described in detail with specific embodiment：
Embodiment 1
The first step, into piece：Polysilicon chip is put into wool-weaving machine；
Second step, alkali are thrown：It is acted on using the auxiliary making herbs into wool of silicon anisotropic reactive and texturing assistant agent in KOH, in silicon
Piece surface forms the hillock shape and pyramid structure of protrusion, while degreasing and mechanical damage layer；
Third step, it is silver-plated：Utilize Ag/Ag+System capacity is far below the valence band edge of silicon, Ag+Electricity is obtained from the valence band of silicon
Son, to be reduced, Ag particle realizes occupy-place in silicon face, is uniformly adhered to silicon chip surface, Ag++e-=Ag, Si+6HF=
H2SiF6+2H2；
4th step, borehole：Under the action of hydrofluoric acid and hydrogen peroxide, electrochemistry occurs for metal ion and contacted silicon atom
Silver nano-grain is injected into the hole on crystal silicon surface by corrosion to directional etching silicon wafer, accelerates directional etching, on its surface
It forms nanoscale microstructure and forms sunken luminous effect composition nanoscale hole hole；
5th step, the desilverization：Complex compound, which is formed, using ammonium hydroxide, hydrogen peroxide and silver ion removes silicon chip surface silver ion；
6th step, reaming：Nanoscale hole hole flannelette after making borehole expands, and increases the absorption of light；
7th step, alkali cleaning：The porous silicon and surface spikes, hillock shape and pyramid structure of the covering of reaming rear surface are cleaned,
Surface is rinsed using the alkali of high concentration, utilizes OH-Silicon anisotropic etching is corroded, is washed due to anti-inside acid
Surface spikes, hillock shape and the pyramid structure that should be left；
8th step, deburring：The hydrochloric acid and hydrogen peroxide of high concentration, using hypochlorous strong oxidizing property rinsed surfaces burr,
In addition to this hillock shape and pyramid structure are also accompanied by desilverization function；
9th step, pickling：Foreign ion is mainly removed using hydrochloric acid, hydrofluoric acid is mainly hydrophobic to silicon chip surface；
Tenth step, drying：Utilize the water of hot bellows drying silicon chip surface.
Embodiment 2
In silicon chip surface after above ten processes, the uniform hole of openings of sizes is finally produced, the depth is uniformly low
Reflectivity nanoscale hole hole flannelette, the opening diameter in the hole is at 400-500 nanometers, 350-400 nanometers of hole depth, reflectivity
18-20。
Embodiment 3
Described 350-400 nanometers of conditions of hole depth under conditions of time 180-220S is interior, are led at 33 DEG C -35 DEG C of temperature
Cross texturing assistant agent and uniformly plate one layer of metal ion in silicon chip surface, under the action of hydrofluoric acid, hydrogen peroxide metal ion with
Electrochemical corrosion occurs for contacted silicon atom to longitudinal corrosion of silicon, is formed on its surface nanoscale microstructure.
Embodiment 4
The 400-500 nanometers of conditions of opening diameter in the hole are the conditions of time 120-150S at 8 DEG C -10 DEG C of temperature
Under, by 350-400 nanometers of hole depth of pieces under the action of hydrofluoric acid, nitric acid lateral encroaching, make its nanoscale hole hole opening reach
To technique requirement, the microcosmic flannelette of satisfactory antiradar reflectivity is finally produced, the range of reflectivity is 18-20.
Claims (4)
1. a kind of process for etching for polysilicon diamond wire slice, it is characterised in that：
The first step, into piece：Polysilicon chip is put into wool-weaving machine；
Second step, alkali are thrown：It is acted on using the auxiliary making herbs into wool of silicon anisotropic reactive and texturing assistant agent in KOH, in silicon wafer table
Face forms the hillock shape and pyramid structure of protrusion, while degreasing and mechanical damage layer；
Third step, it is silver-plated：Utilize Ag/Ag+System capacity is far below the valence band edge of silicon, Ag+Electronics is obtained from the valence band of silicon,
To be reduced, Ag particle realizes occupy-place in silicon face, is uniformly adhered to silicon chip surface, Ag++e-=Ag, Si+6HF=
H2SiF6+2H2；
4th step, borehole：Under the action of hydrofluoric acid and hydrogen peroxide, electrochemical corrosion occurs for metal ion and contacted silicon atom
To directional etching silicon wafer, silver nano-grain is injected into the hole on crystal silicon surface, accelerates directional etching, be formed on its surface
Nanoscale microstructure forms sunken luminous effect and constitutes nanoscale hole hole；
5th step, the desilverization：Complex compound, which is formed, using ammonium hydroxide, hydrogen peroxide and silver ion removes silicon chip surface silver ion；
6th step, reaming：Nanoscale hole hole flannelette after making borehole expands, and increases the absorption of light；
7th step, alkali cleaning：The porous silicon and surface spikes, hillock shape and pyramid structure of the covering of reaming rear surface are cleaned, is utilized
The alkali of high concentration rinses surface, utilizes OH-Silicon anisotropic etching is corroded, washes and is stayed due to being reacted inside acid
Under surface spikes, hillock shape and pyramid structure；
8th step, deburring：The hydrochloric acid and hydrogen peroxide of high concentration utilize hypochlorous strong oxidizing property rinsed surfaces burr, hillock
In addition to this shape and pyramid structure are also accompanied by desilverization function；
9th step, pickling：Foreign ion is mainly removed using hydrochloric acid, hydrofluoric acid is mainly hydrophobic to silicon chip surface；
Tenth step, drying：Utilize the water of hot bellows drying silicon chip surface.
2. a kind of process for etching for polysilicon diamond wire slice according to claim 1, it is characterised in that：In silicon wafer
The uniform hole of openings of sizes, the uniform antiradar reflectivity nano grade pore of the depth are finally produced after above ten processes in surface
Hole flannelette, the opening diameter in the hole is at 400-500 nanometers, 350-400 nanometers of hole depth, reflectivity 18-20.
3. a kind of process for etching for polysilicon diamond wire slice according to claim 1, it is characterised in that：Described
350-400 nanometers of conditions of hole depth under conditions of time 180-220S is interior, are existed by texturing assistant agent at 33 DEG C -35 DEG C of temperature
Silicon chip surface uniformly plates one layer of metal ion, and metal ion and contacted silicon atom are sent out under the action of hydrofluoric acid, hydrogen peroxide
Raw electrochemical corrosion is formed on its surface nanoscale microstructure to longitudinal corrosion of silicon.
4. a kind of process for etching for polysilicon diamond wire slice according to claim 1, it is characterised in that：Described
The 400-500 nanometers of conditions of opening diameter in hole are to pass through hole depth 350- under conditions of 8 DEG C -10 DEG C of temperature, time 120-150S
400 nanometers of piece lateral encroaching under the action of hydrofluoric acid, nitric acid makes its nanoscale hole hole opening reach technique requirement, finally
The microcosmic flannelette of satisfactory antiradar reflectivity is produced, the range of reflectivity is 18-20.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810654704.9A CN108847432A (en) | 2018-06-22 | 2018-06-22 | A kind of process for etching for polysilicon diamond wire slice |
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| CN201810654704.9A CN108847432A (en) | 2018-06-22 | 2018-06-22 | A kind of process for etching for polysilicon diamond wire slice |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109852953A (en) * | 2019-02-28 | 2019-06-07 | 合肥工业大学 | A kind of preparation method of silver/Multi-hole pyramid silicon face enhancing Raman substrate |
| CN110911527A (en) * | 2019-11-28 | 2020-03-24 | 南京纳鑫新材料有限公司 | High-stability black silicon texturing process by polycrystalline wet method |
| CN112436074A (en) * | 2020-11-30 | 2021-03-02 | 中建材浚鑫科技有限公司 | Texturing and cleaning process suitable for double-sided silicon solar cell |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120097209A1 (en) * | 2010-10-25 | 2012-04-26 | The Research Foundation Of State University Of New York | Fabrication of surface textures by ion implantation for antireflection of silicon crystals |
| CN105226113A (en) * | 2015-07-09 | 2016-01-06 | 苏州阿特斯阳光电力科技有限公司 | Suede structure of a kind of crystal silicon solar energy battery and preparation method thereof |
| CN106505113A (en) * | 2016-11-11 | 2017-03-15 | 苏州晶牧光材料科技有限公司 | The matte preparation method of crystal-silicon solar cell |
| CN107268087A (en) * | 2017-06-23 | 2017-10-20 | 南京纳鑫新材料有限公司 | A kind of metal catalytic etching method for the polysilicon chip reflectivity for reducing Buddha's warrior attendant wire cutting |
| WO2017201702A1 (en) * | 2016-05-26 | 2017-11-30 | 南京中云新材料有限公司 | Monocrystalline silicon wafer surface texturing method |
| CN107623054A (en) * | 2017-09-19 | 2018-01-23 | 绿华能源科技（杭州）有限公司 | A kind of process for etching based on silicon wafer cut by diamond wire |
| CN108172662A (en) * | 2017-12-26 | 2018-06-15 | 苏州日弈新电子科技有限公司 | A kind of processing method of the black silion cell silicon chip of the sun |
| CN108179478A (en) * | 2017-12-27 | 2018-06-19 | 无锡尚德太阳能电力有限公司 | The method that metal catalytic chemical corrosion method single side prepares the black silicon matte of polycrystalline |
-
2018
- 2018-06-22 CN CN201810654704.9A patent/CN108847432A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120097209A1 (en) * | 2010-10-25 | 2012-04-26 | The Research Foundation Of State University Of New York | Fabrication of surface textures by ion implantation for antireflection of silicon crystals |
| CN105226113A (en) * | 2015-07-09 | 2016-01-06 | 苏州阿特斯阳光电力科技有限公司 | Suede structure of a kind of crystal silicon solar energy battery and preparation method thereof |
| WO2017201702A1 (en) * | 2016-05-26 | 2017-11-30 | 南京中云新材料有限公司 | Monocrystalline silicon wafer surface texturing method |
| CN106505113A (en) * | 2016-11-11 | 2017-03-15 | 苏州晶牧光材料科技有限公司 | The matte preparation method of crystal-silicon solar cell |
| CN107268087A (en) * | 2017-06-23 | 2017-10-20 | 南京纳鑫新材料有限公司 | A kind of metal catalytic etching method for the polysilicon chip reflectivity for reducing Buddha's warrior attendant wire cutting |
| CN107623054A (en) * | 2017-09-19 | 2018-01-23 | 绿华能源科技（杭州）有限公司 | A kind of process for etching based on silicon wafer cut by diamond wire |
| CN108172662A (en) * | 2017-12-26 | 2018-06-15 | 苏州日弈新电子科技有限公司 | A kind of processing method of the black silion cell silicon chip of the sun |
| CN108179478A (en) * | 2017-12-27 | 2018-06-19 | 无锡尚德太阳能电力有限公司 | The method that metal catalytic chemical corrosion method single side prepares the black silicon matte of polycrystalline |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109852953A (en) * | 2019-02-28 | 2019-06-07 | 合肥工业大学 | A kind of preparation method of silver/Multi-hole pyramid silicon face enhancing Raman substrate |
| CN110911527A (en) * | 2019-11-28 | 2020-03-24 | 南京纳鑫新材料有限公司 | High-stability black silicon texturing process by polycrystalline wet method |
| CN112436074A (en) * | 2020-11-30 | 2021-03-02 | 中建材浚鑫科技有限公司 | Texturing and cleaning process suitable for double-sided silicon solar cell |
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