CN103087850B - A kind of monocrystalline silicon piece prerinse liquid and its cleaning method - Google Patents
A kind of monocrystalline silicon piece prerinse liquid and its cleaning method Download PDFInfo
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- CN103087850B CN103087850B CN201110349895.6A CN201110349895A CN103087850B CN 103087850 B CN103087850 B CN 103087850B CN 201110349895 A CN201110349895 A CN 201110349895A CN 103087850 B CN103087850 B CN 103087850B
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Abstract
The present invention relates to a kind of monocrystalline silicon piece prerinse liquid and its cleaning method.It is characterized in that being made up of following composition：Described prerinse liquid is made up of hydrogen peroxide, sodium hydroxide or potassium hydroxide and water.It is characterized in that being made up of following composition：Hydrogen peroxide, sodium hydroxide or potassium hydroxide, water.A kind of cleaning method of monocrystalline silicon piece prerinse liquid described in a kind of utilization claim 1, it is characterised in that：The silicon chip inserted in the gaily decorated basket is put into well mixed monocrystalline silicon piece prerinse liquid, temperature is cleaned 60~600 seconds at 55~80 DEG C with ultrasonic wave, after ultrasonic wave cleaning, after being rinsed 1 minute with deionized water under conditions of 60 DEG C, silicon chip drying is taken out after deionized water rinsing.It is an advantage of the invention that after using hydrogen peroxide process, alkali concn reduction, generation amounts of hydrogen is few, will not be in silicon chip surface production bubble print, and basket will not be floated, obvious boundary will not be produced.Due to reducing the concentration of alkali, Reducing thickness is also effectively reduced, and advantageously reduces the fragment rate of later process cell piece.
Description
Technical field
The present invention relates to a kind of monocrystalline silicon piece prerinse liquid and its cleaning method.
Background technology
Solar cell is directly to produce electric energy using sunshine and material interaction, it is not necessary to consume fuel and water etc.
Material, any gas including carbon dioxide is not discharged in use, be environmentally safe regenerative resource.To improving
Ecological environment, the illeffects of alleviation greenhouse gases are significant.Therefore solar cell is expected to the weight as 21 century
Want new energy.
Cell piece manufacturing process is mainly that prerinse → making herbs into wool → diffusion → etches → gone phosphorosilicate glass → coated with antireflection film
→ printing → sintering → test.
Solar silicon wafers are after the cutting processing of wire cutting machine, and its surface is seriously stain, to reach solar energy
The commercial Application standard of generating, just has to pass through strict matting.Due to cutting belt come severe contamination, its surface it is clear
Wash process and be also necessarily required to more complicated and fine technological process.
Prewashed purpose is exactly the mechanical damage layer for removing silicon chip surface, removes surface and oil contaminant and metal impurities.Cutting
Damage layer can be produced during piece in silicon chip surface, damage layer removal is not enough, residual defect, residual defect can be caused follow-up high
Impurity fails complete removal caused by continuing in warm processing procedure to material depths in extension, cutting process, and these can all increase
The recombination-rate surface of silicon chip, has a strong impact on the efficiency of cell piece.
General at present use goes damage technique to be cleaned, because the common process that first throwing process is used is low concentration alkali
（1% or so）, course of reaction is more violent, and bubble hydrogen is produced in course of reaction, because bubble can not depart from silicon chip surface in time,
Cause whole basket silicon chip levitating, and part silicon chip is not immersed in reaction solution and reaction can not be continued, silicon chip outward appearance exists bright
Aobvious boundary.And bubble hydrogen absorption is in silicon chip surface, hinder solution to continue to react with silicon chip, and difference produced in silicon chip surface,
In the presence of the black hole marking of air bubble-shaped small one by one.Therefore new cleaning fluid and cleaning method is urgently developed to solve to deposit at present
Above mentioned problem.
The content of the invention
Present invention aim to address in the prior art to monocrystalline silicon piece prerinse when existing above mentioned problem there is provided one
Plant monocrystalline silicon piece prerinse liquid and its cleaning method.A kind of monocrystalline silicon piece prerinse liquid of present invention design, it is characterised in that under
Row constituent is constituted：Described prerinse liquid is made up of hydrogen peroxide, sodium hydroxide or potassium hydroxide and water.It is characterized in that by
Following composition is constituted：
Hydrogen peroxide 3%~7%,
Sodium hydroxide or potassium hydroxide 0.1%~1%,
Water 92%~96.9%.
A kind of cleaning method of monocrystalline silicon piece prerinse liquid described in a kind of utilization claim 1, it is characterised in that：Will insertion
Silicon chip in the gaily decorated basket is put into well mixed monocrystalline silicon piece prerinse liquid, and temperature cleans 60 at 55~80 DEG C with ultrasonic wave
~600 seconds, after ultrasonic wave cleaning, after being rinsed 1 minute with deionized water under conditions of 60 DEG C, silicon is taken out after deionized water rinsing
Piece is dried.
It is an advantage of the invention that after using hydrogen peroxide process, alkali concn reduction, generation amounts of hydrogen is few, will not be in silicon chip surface
Bubble print is produced, and basket will not be floated, obvious boundary will not be produced.Due to reducing the concentration of alkali, Reducing thickness is also effective
Reduction, advantageously reduces the fragment rate of later process cell piece.Cleaned using ultrasonic wave, can remove be adsorbed in silicon chip surface >=
0.4um particle, effectively improves the clean level of silicon chip surface.H2O2It is very strong oxidant, aoxidizes silicon chip surface,
At the same time, NaOH then dissolves produced oxide at leisure.Exactly this oxidation-dissolving, reoxidizes redissolution process, goes
Except the organic film of silicon chip surface, the removal of impurities on surface of silicon chip particulate is also based on this principle.
Embodiment
The general thinking of cleaning is the organic contaminations for removing surface first, because organic matter meeting covering part silicon face, makes
Oxide layer and associated contamination particle are difficult to remove；Then oxide layer is dissolved, because oxide layer is " contamination trap ", also can
Introduce epitaxy defect；Particle, metal contamination are finally removed again, while being passivated silicon face.
The formula of cleaning fluid is extremely important to cleaning performance.Requirement to cleaning fluid is：1. it is moderate to silicon corrosion rate；2.
High oxidation gesture；3. can be with metal ion formation complex compound；4. metal contamination can be dissolved；5. do not increase surface micro-roughness；6. pair
The influence of environment is small；7. remove removing natural oxidizing layer.The general generation for having such common recognition, i.e. silica is isotropism
, if so oxidation rate is more than alkali or hydrofluoric acid to the corrosion rate of silica, surface is equably to be corroded；And silicon
By hydrofluoric acid or OH-Corrode as anisotropy, easily cause RMS deterioration.Therefore the introducing of strong oxidizer is conducive to RMS drop
It is low.In addition, atomic state metal contamination such as copper can be oxidized to acid-soluble cation by strong oxidizer, make it easy to remove.
Described prerinse liquid is made up of hydrogen peroxide, sodium hydroxide or potassium hydroxide and water.It is characterized in that by following
Constituent is constituted：
Hydrogen peroxide 3%~7%,
Sodium hydroxide or potassium hydroxide 0.1%~1%,
Water 96.9%~92%.
A kind of cleaning method of monocrystalline silicon piece prerinse liquid described in a kind of utilization claim 1, it is characterised in that：Will insertion
Silicon chip in the gaily decorated basket is put into well mixed monocrystalline silicon piece prerinse liquid, and temperature cleans 60 at 55~80 DEG C with ultrasonic wave
~600 seconds, after ultrasonic wave cleaning, after being rinsed 1 minute with deionized water under conditions of 60 DEG C, silicon is taken out after deionized water rinsing
Piece is dried.
Implement 1:
Take 4.25 kilograms of hydrogen peroxide（Concentration 30%）, 0.24 kilogram of sodium hydroxide adds in 95.51 kilograms of water, is made into
Double centner cleaning fluid, is well mixed, and opens circulation, the bubbling switch of wool-weaving machine, bubbling is closed after 5 minutes.It will insert in the gaily decorated basket
Silicon chip be put into well mixed monocrystalline silicon piece prerinse liquid, temperature is cleaned 60 seconds, ultrasonic wave is clear at 55 DEG C with ultrasonic wave
After washing, after being rinsed 1 minute with deionized water under conditions of 60 DEG C, silicon chip drying is taken out after deionized water rinsing.
Implement 2:
Take 3 kilograms of hydrogen peroxide（Concentration 30%）, 0.2 kilogram of sodium hydroxide adds in 96.8 kilograms of water, is made into double centner
Cleaning fluid, is well mixed, and opens circulation, the bubbling switch of wool-weaving machine, bubbling is closed after 3 minutes.The silicon chip in the gaily decorated basket will be inserted
It is put into well mixed monocrystalline silicon piece prerinse liquid, temperature is cleaned 300 seconds at 65 DEG C with ultrasonic wave, after ultrasonic wave cleaning,
After being rinsed 1 minute with deionized water under conditions of 60 DEG C, silicon chip drying is taken out after deionized water rinsing.
Implement 3:
Take 7 kilograms of hydrogen peroxide（Concentration 30%）, 1 kilogram of sodium hydroxide added in 92 kilograms of water, is made into double centner cleaning
Liquid, is well mixed, and opens circulation, the bubbling switch of wool-weaving machine, bubbling is closed after 4 minutes.The silicon chip inserted in the gaily decorated basket is put into
Into well mixed monocrystalline silicon piece prerinse liquid, temperature is cleaned 600 seconds at 80 DEG C with ultrasonic wave, after ultrasonic wave cleaning, 60
After being rinsed 1 minute with deionized water under conditions of DEG C, silicon chip drying is taken out after deionized water rinsing.
Claims (1)
1. a kind of cleaning method of monocrystalline silicon piece prerinse liquid, it is characterised in that：
Configure cleaning fluid：Take 4.25 kilograms of the hydrogen peroxide of concentration 30%, 0.24 kilogram of sodium hydroxide, the water of 95.51 kilograms of addition
In, double centner cleaning fluid is made into, is well mixed, circulation, the bubbling switch of wool-weaving machine is opened, bubbling is closed after 5 minutes；
Cleaning：The silicon chip inserted in the gaily decorated basket is put into cleaning fluid, temperature cleans 60 seconds, ultrasonic wave with ultrasonic wave at 55 DEG C
After cleaning, after being rinsed 1 minute with deionized water under conditions of 60 DEG C, silicon chip drying is taken out after deionized water rinsing.
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| CN201110349895.6A CN103087850B (en) | 2011-11-08 | 2011-11-08 | A kind of monocrystalline silicon piece prerinse liquid and its cleaning method |
Applications Claiming Priority (1)
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| CN201110349895.6A CN103087850B (en) | 2011-11-08 | 2011-11-08 | A kind of monocrystalline silicon piece prerinse liquid and its cleaning method |
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| CN103087850A CN103087850A (en) | 2013-05-08 |
| CN103087850B true CN103087850B (en) | 2017-10-03 |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103464413A (en) * | 2013-09-10 | 2013-12-25 | 无锡荣能半导体材料有限公司 | Silicon material washing method |
| CN103464415B (en) * | 2013-09-13 | 2016-08-17 | 苏州协鑫光伏科技有限公司 | Solar monocrystalline silicon slice cleaning fluid and cleaning method |
| CN103681239B (en) * | 2013-10-29 | 2016-09-28 | 宁夏银星能源股份有限公司 | A kind of method cleaning monocrystalline silicon sheet surface |
| CN104638058A (en) * | 2013-11-15 | 2015-05-20 | 江苏天宇光伏科技有限公司 | High-square-resistance diffusion process capable of lowering cost and increasing conversion efficiency |
| CN103736689A (en) * | 2013-12-31 | 2014-04-23 | 上海集成电路研发中心有限公司 | Silicon wafer cleaning method |
| CN104479913A (en) * | 2014-10-31 | 2015-04-01 | 内蒙古中环光伏材料有限公司 | Rinsing fluid used for removing organics on surface of monocrystalline silicon piece and cleaning method |
| CN105032834A (en) * | 2015-07-16 | 2015-11-11 | 邢台晶龙电子材料有限公司 | Alkali washing water special for diamond silicon wafer and diamond silicon wafer washing technology |
| CN106833954B (en) * | 2017-01-23 | 2020-08-11 | 常州时创能源股份有限公司 | Additive of monocrystalline silicon piece texturing pre-cleaning liquid and application thereof |
| CN108722982B (en) * | 2018-05-28 | 2020-09-22 | 邢台晶龙电子材料有限公司 | Treatment method of jaw plate of polycrystalline crusher |
| CN113231386A (en) * | 2021-04-20 | 2021-08-10 | 南京纳科半导体有限公司 | Method for removing gallium nitride surface pollutants and gallium nitride substrate |
| CN114311355B (en) * | 2022-03-14 | 2022-05-27 | 广东高景太阳能科技有限公司 | Production method of monocrystalline silicon wafer and monocrystalline silicon wafer |
| CN114653667A (en) * | 2022-03-31 | 2022-06-24 | 乌海市晶易硅材料有限公司 | Cleaning method for removing oxide layer on surface of silicon material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001244228A (en) * | 2000-02-29 | 2001-09-07 | Mitsubishi Materials Silicon Corp | Liquid and method for washing semiconductor substrate |
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| KR101409085B1 (en) * | 2007-03-16 | 2014-06-17 | 미츠비시 가스 가가쿠 가부시키가이샤 | Cleaning composition and process for producing semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001244228A (en) * | 2000-02-29 | 2001-09-07 | Mitsubishi Materials Silicon Corp | Liquid and method for washing semiconductor substrate |
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Address after: 201406 Shanghai city Fengxian District Jianghai Economic Zone Applicant after: Assist prosperous integrated Science and Technology Co., Ltd. Address before: Flag of Fengxian Port Road 201406 Shanghai City No. 738 Applicant before: Shanghai Chaori Solar Energy Science & Technology Co., Ltd. |
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Effective date of registration: 20180117 Address after: 221600 Jiangsu city in Xuzhou Province Economic Development Zone Peixian Road on the north side of Han Co-patentee after: Assist prosperous integrated Science and Technology Co., Ltd. Patentee after: Xuzhou Xinyu Photovoltaic Technology Co., Ltd. Address before: 201406 Shanghai city Fengxian District Jianghai Economic Zone Patentee before: Assist prosperous integrated Science and Technology Co., Ltd. |