CN108845709B - Interconnection structure of nano silver wire layer, forming method thereof and touch device - Google Patents
Interconnection structure of nano silver wire layer, forming method thereof and touch device Download PDFInfo
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- CN108845709B CN108845709B CN201810719781.8A CN201810719781A CN108845709B CN 108845709 B CN108845709 B CN 108845709B CN 201810719781 A CN201810719781 A CN 201810719781A CN 108845709 B CN108845709 B CN 108845709B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The invention provides an interconnection structure of a nano silver wire layer, a forming method of the interconnection structure and a touch device. Through set up the contact groove in the nanometer silver line layer to make and walk the line and further fill the contact groove, thereby in the unit size on nanometer silver line layer, can effectively improve and walk the effective area of contact between line and the nanometer silver line layer, thereby reduce and walk the contact resistance between line and the nanometer silver line layer. And, since the trace is embedded in the nano-silver wire layer, it is also possible to increase the adhesion property between the trace and the nano-silver wire layer. When the interconnection structure of the nano silver wire layer is applied to a touch device, the narrow frame design of the touch screen is facilitated.
Description
Technical Field
The invention relates to the technical field of panel display, in particular to an interconnection structure of a nano silver wire layer, a forming method of the interconnection structure and a touch device.
Background
Touch panel technology has become the simplest man-machine interaction input device at present. In view of the advantages of the touch screen, such as simplicity, convenience, fast response speed, space saving, and easy communication, the touch panel technology has a wider application range in China, and is not only generally applied to portable electronic devices, such as smart phones, tablet computers or notebook computers, but also widely applied to advertisement information devices, industrial control, military commands, electronic games, multimedia teaching, real estate pre-sale, and public information query devices, such as business queries in the departments of telecommunication offices, tax offices, banks, and electric power.
Generally, the touch electrode in the touch panel is mostly made of an ITO (indium tin oxide) transparent conductive material. However, ITO (indium tin oxide) has been replaced by thin films made of other materials due to problems such as high resistance, high cost, and poor scratch resistance. Specifically, the nano silver wire material has excellent conductivity, a simple preparation process, and good light transmittance, and thus the nano silver wire material is gradually used to replace an ITO material for preparing a touch electrode of a touch panel.
Among them, in the formed nano silver wire layer prepared by using the nano silver wire material, there are generally a plurality of nano silver wires overlapped with each other. And after the nano silver wire layer is formed to form the touch electrode, forming a wire on the edge of the nano silver wire layer so as to lead out the touch electrode by using the wire. However, since the size of the nano-silver wires in the nano-silver wire layer is small and the total size of the nano-silver wires that can be exposed from the surface of the nano-silver wire layer is limited, a contact area large enough to ensure a large contact area between the wires and the nano-silver wire layer needs to be reserved in the edge area of the nano-silver wire layer in order to ensure a small contact resistance between the wires and the nano-silver wire layer.
Disclosure of Invention
The invention aims to provide an interconnection structure of a nano silver wire layer, which solves the problem that the existing interconnection structure of the nano silver wire layer needs to have a large enough size.
To solve the above technical problem, the present invention provides an interconnection structure of a nano silver wire layer, comprising:
the nano silver wire layer is provided with at least one contact groove; and the number of the first and second groups,
and the wiring is formed on the nano silver wire layer and fills the contact groove, so that the wiring is electrically connected with the nano silver wire exposed on the surface of the nano silver wire layer and is electrically connected with the nano silver wire exposed in the contact groove.
Optionally, the layer of nanosilver lines comprises: the nano silver wire film is provided with a plurality of mutually overlapped nano silver wires; and the protective filler penetrates into the gap of the nano silver wire from the surface of the nano silver wire film.
Optionally, a cross-sectional shape of the contact groove in a direction parallel to the surface of the silver nanowire layer is S-shaped, so that the contact groove extends curvilinearly on the surface of the silver nanowire layer.
Optionally, a first contact groove and a second contact groove are arranged in the nano-silver wire layer, and the opening size of the first contact groove is larger than that of the second contact groove.
Optionally, a cross-sectional shape of the first contact groove in a direction perpendicular to the surface of the silver nanowire layer is an inverted trapezoid.
Optionally, the cross-sectional shape of the second contact groove in the direction perpendicular to the surface of the silver nanowire layer is rectangular.
It is still another object of the present invention to provide a method for forming an interconnect structure of a nano-silver wire layer, comprising:
providing a substrate;
forming a nano silver wire layer on the substrate, wherein at least one contact groove is formed in the nano silver wire layer; and the number of the first and second groups,
forming a trace on the nano-silver wire layer, wherein the trace fills the contact groove, so that the trace is electrically connected with the nano-silver wire exposed on the surface of the nano-silver wire layer and is electrically connected with the nano-silver wire exposed in the contact groove.
Optionally, the forming method of the nano silver wire layer includes:
forming a nano silver wire film on the substrate, wherein the nano silver wire film is provided with a plurality of mutually overlapped nano silver wires; and the number of the first and second groups,
a protective material is coated on the top surface of the thin film of nano-silver wires, and the protective material penetrates into the gaps of the nano-silver wires to form a protective filler.
Another object of the present invention is to provide a touch device, comprising:
the contact structure comprises a nano silver wire electrode layer, a contact area and a contact groove, wherein the edge position of the nano silver wire electrode layer is defined with the contact area, and the nano silver wire electrode layer is provided with at least one contact groove corresponding to the contact area; and the number of the first and second groups,
and the wiring is formed in the contact area of the nano silver wire electrode layer and fills the contact groove, so that the wiring is electrically connected with the nano silver wire exposed on the surface of the nano silver wire electrode layer and is electrically connected with the nano silver wire exposed in the contact groove.
Optionally, an area of the contact region of the silver nanowire electrode layer is less than or equal to 0.3mm2。
In the interconnection structure of the nano silver wire layer provided by the invention, the contact groove is arranged in the nano silver wire layer, and the routing wire further fills the contact groove. In the interconnection structure formed from this, walk the line not only can with the contact of the nanometer silver line on the nanometer silver line layer surface, can also with expose the contact groove in the contact groove the contact of nanometer silver line, and then effectively improved the effective area of contact between line and the nanometer silver line layer in the unit size (promptly, walk the total area of contact of the nanometer silver line in line and the nanometer silver line layer), reduced the contact resistance between line and the nanometer silver line layer. Therefore, the size of the formed interconnection structure can be further reduced while ensuring the contact resistance between the traces and the layer of nano-silver wires. In addition, the wiring is embedded into the nano-silver wire layer, so that the adhesion between the wiring and the nano-silver wire layer can be further improved, and the risk of the wiring falling off from the nano-silver wire layer is reduced.
Therefore, when the interconnection structure is applied to the touch device, the area of a contact area reserved by the touch electrode and used for being connected with the routing lines is correspondingly reduced, and the narrow frame design of the touch device is facilitated.
Drawings
FIG. 1 is a schematic diagram of an interconnection structure of a conventional layer of nano-silver wires;
FIG. 2a is a schematic diagram of an interconnect structure of a layer of nanosilver lines in an embodiment of the present invention;
FIG. 2b is a partial top view of an interconnect structure for a layer of nanosilver lines in an embodiment of the invention;
FIG. 3 is a flow chart of a method for forming an interconnect structure of a layer of nanosilver in an embodiment of the present invention;
fig. 4a to 4b are schematic structural diagrams of an interconnection structure of a nano silver wire layer in a manufacturing process of the interconnection structure according to an embodiment of the present invention.
Wherein the reference numbers are as follows:
10-a substrate;
20-a layer of nanosilver;
30-routing;
100-a substrate;
200-a layer of nanosilver;
210-a first contact trench; 220-a second contact trench;
300-routing.
Detailed Description
As discussed in the background, a large area of contact area is usually required to be configured between the existing silver nanowire layer and the trace, so as to ensure that the contact resistance between the trace and the silver nanowire layer is in a small range. However, with the continuous development of touch panels, the technology of a touch screen with a narrow bezel will become a future trend, and therefore, the area of a contact area that needs to be reserved on a nano-silver line layer needs to be further reduced on the basis of ensuring the contact resistance between a trace and the nano-silver line layer.
Fig. 1 is a schematic view illustrating an interconnection structure of a conventional nano silver wire layer, as shown in fig. 1, a nano silver wire layer 20 is formed on a substrate 10, for example, and may be used to form a nano silver wire electrode, and the nano silver wire layer 20 has a plurality of nano silver wires overlapping each other, so that the total area of the nano silver wires exposed from the surface of the nano silver wire layer 20 per unit size is very limited. Traces 30 are formed on the layer of nanosilver 20 and the traces 30 are typically disposed at the edge regions of the layer of nanosilver 20. That is, the trace 30 is directly formed on the surface of the nano-silver wire layer 20 and electrically connected to the nano-silver wire exposed from the surface of the nano-silver wire layer 20, so as to lead out the nano-silver wire electrode.
However, based on the connection relationship between the nano-silver wire layer 20 and the trace 30 shown in fig. 1, in order to ensure that the trace 30 has a smaller contact resistance with the nano-silver wires in the nano-silver wire layer 20, it is generally necessary to make the contact area between the trace 30 and the nano-silver wire layer 20 have a sufficiently large area, that is, a sufficiently large contact area needs to be reserved on the edge position of the nano-silver wire layer 20 to achieve the electrical connection with the trace 30, for example, at least 0.3mm needs to be reserved on the edge position of the nano-silver wire layer 202The contact area of (a). When the interconnection structure of the nano silver wire layer is applied to the touch screen, the narrow-frame display of the touch screen is not facilitated.
To this end, the present invention provides an interconnection structure of a nano-silver wire layer by providing a contact groove in the nano-silver wire layer, and forming a trace on a surface of the nano-silver wire layer and further filling the contact groove. So, can be in order effectively to improve unit size's nanometer silver line layer, its and walk the effective area of contact between the line, reduce and walk the contact resistance between line and the nanometer silver line layer to be favorable to realizing the reduction of the size of mutual advantage structure (i.e. reserve the area that is used for with the area of contact area who walks the line and be connected on the nanometer silver line layer and reduce greatly).
The present invention provides a nano-silver layer, a method for forming the same, and a touch device. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 2a is a schematic diagram of an interconnect structure of a nano-silver wire layer in an embodiment of the present invention, as shown in fig. 2a, the interconnect structure includes:
a nano-silver wire layer 200, wherein at least one contact groove is arranged in the nano-silver wire layer 200; the layer 200 of nano-silver wires may be formed on a substrate 100, which may be glass or a flexible substrate (e.g., a polyimide film); and, in this embodiment, the nano-silver wire layer 200 has a first contact groove 210 and a second contact groove 220 formed therein;
a trace 300 formed on the nano-silver wire layer 200 and filling the contact groove (in the embodiment, the trace 300 fills the first contact groove 210 and the second contact groove 220), so that the trace 300 is electrically connected to the nano-silver wire exposed on the surface of the nano-silver wire layer 200 and the nano-silver wire exposed in the contact groove.
Since the nano-silver wires in the nano-silver wire layer 200 may be exposed not only from the upper surface of the nano-silver wire layer 200, but also by forming the contact grooves, the nano-silver wires may be further exposed from the contact grooves. Equivalently, the total area of the nano-silver wires exposed from the nano-silver wire layer 200 is greatly increased in a unit size, so that the trace 300 can be in contact with not only the nano-silver wires on the surface of the nano-silver wire layer 200, but also the trace 300 fills the contact groove and can be in direct contact with the nano-silver wires exposed in the contact groove. As a result, the contact area between the trace 300 and the silver nanowires in the silver nanowire layer 200 can be increased within a unit size, and the contact resistance between the trace 300 and the silver nanowire layer 200 can be reduced. It can be seen that the interconnect structure in the present embodiment can achieve further reduction in the size of the interconnect structure (i.e., the area of the contact region that needs to be reserved in the nano-silver wire layer 200 can be reduced) while ensuring the same contact resistance, compared to the conventional interconnect structure. In addition, the wire 300 can be further embedded into the nano-silver wire layer 200, so that the adhesion between the wire 300 and the nano-silver wire layer 200 can be further improved, and the problem that the wire 300 falls off is avoided.
As described above, the nano-silver wire layer 200 includes a plurality of nano-silver wires stacked in an overlapping manner, and further, the nano-silver wire layer 200 further includes a protective filler. Specifically, the nano-silver wire layer 200 includes a nano-silver wire thin film having a plurality of nano-silver wires and a protective filler infiltrated into gaps of the nano-silver wires from a surface of the nano-silver wire thin film to enable the nano-silver wires positioned on an upper surface of the nano-silver wire thin film to be exposed from the protective filler.
Since the adhesion between the nano silver wire film and the substrate 100 is poor, so that the nano silver wire film is easily peeled off from the substrate 100, the protective filler is provided to improve the adhesion performance of the finally formed nano silver wire layer 200 on the substrate 100, thereby reducing the risk of peeling the nano silver wire layer 200 from the substrate 100.
It should be noted that, by forming the protective filler, the adhesion of the formed nano-silver wire layer 200 on the substrate 100 can be effectively improved, but at the same time, the total area of the exposed nano-silver wires in the nano-silver wire layer 200 is smaller. Therefore, in the conventional interconnection structure based on the nano-silver wire layer (i.e., the trace is formed only on the top surface of the nano-silver wire layer as shown in fig. 1), the contact area between the trace and the nano-silver wire in a unit size is smaller, so that the area of the contact area to be reserved needs to be further increased on the nano-silver wire layer. However, the contact area between the trace 300 and the silver nanowire in a unit size can be effectively increased by using the interconnection structure provided in the embodiment.
Fig. 2b is a partial top view of an interconnection structure of a nano-silver wire layer according to an embodiment of the present invention, and as shown in fig. 2a and 2b, a cross-sectional shape of the contact trench of the nano-silver wire layer 200 in a direction parallel to a surface of the nano-silver wire layer is, for example, an S-shape, such that the contact trench extends in a curved line on the surface of the nano-silver wire layer 200. The curved contact grooves can effectively increase the total area of the contact grooves (i.e., the areas of the sidewalls and the bottom wall of the contact grooves are both increased) compared to the straight contact grooves, thereby further increasing the contact area between the trace 300 and the nano-silver wires in the nano-silver wire layer 30.
In this embodiment, the first contact groove 210 and the second contact groove 220 are formed in the nano-silver wire layer 200, and both the first contact groove 210 and the second contact groove 220 extend in a curved line. Further, the first contact groove 210 and the second contact groove 220 may extend parallel to each other.
With continued reference to fig. 2a, in the present embodiment, the cross-sectional shape of the first contact groove 210 in the direction perpendicular to the surface of the silver nanowire layer may be an inverted trapezoid, and the cross-sectional shape of the second contact groove 220 in the direction perpendicular to the surface of the silver nanowire layer may be a rectangle. Also, the opening size of the first contact groove 210 is larger than the opening size of the second contact groove 220.
Since the opening size of the second contact groove 220 is smaller, the number of the second contact grooves 220 can be increased in a unit size, and the number of the second contact grooves 220 can be flexibly adjusted in the unit size, so as to further improve the contact resistance between the trace 300 and the nano-silver wire layer 200. And, by providing the first contact groove 210 with a larger opening size, it is beneficial to ensure that the trace 300 can be fully filled in the first contact groove 210, and the portion of the trace 300 embedded in the silver nanowire layer 200 can also be increased, so that the adhesion performance of the trace 300 on the silver nanowire layer 200 can be further improved. In addition, since the opening size of the first contact groove 210 is large, the side wall of the first contact groove 210 may be adjusted to be an inclined side wall (for example, the cross-sectional shape of the first contact groove 210 in the present embodiment is an inverted trapezoid). Compared with the vertical side wall, the inclined side wall has larger side wall area in the same height range, so that the contact area between the wiring 300 and the inclined side wall is increased, the number of the contacts between the wiring 300 and the nano silver wires exposed from the inclined side wall can be increased, and the contact resistance between the wiring 300 and the nano silver wire layer 200 is further improved.
It should be noted that fig. 2a and 2b are only schematic diagrams schematically illustrating an interconnection structure of a specific nano silver wire layer, and in other embodiments, a corresponding number of contact grooves may be disposed in the nano silver wire layer and the shape of the contact grooves may be adjusted according to requirements, which is not limited herein.
In a preferred embodiment, the contact groove (e.g., the second contact groove 220) extends from the surface of the nano-silver wire layer 200 and stops in the nano-silver wire layer 200, i.e., the contact groove may not penetrate through the nano-silver wire layer 200, so that the trace 300 filled in the contact groove may contact with the nano-silver wires on the side wall and the bottom wall of the contact groove.
The following is a description of a method of forming an interconnect structure of the above-described nano-silver wire layer to further explain the interconnect structure in the present embodiment.
Fig. 3 is a schematic flow chart of a method for forming an interconnection structure of a nano-silver wire layer according to an embodiment of the present invention, and fig. 4a to 4b are schematic structural diagrams of an interconnection structure of a nano-silver wire layer according to an embodiment of the present invention during a manufacturing process thereof. The various steps in forming the interconnect structure are described below with reference to fig. 3, 4a and 4 b.
In step S110, referring to fig. 4a, a substrate 100 is provided. The substrate may be a flexible substrate, and the material of the substrate may include Polyimide (PI), for example.
Step S120, with continued reference to fig. 4a, forming a nano-silver wire layer 200 on the substrate 100, wherein at least one contact groove is disposed in the nano-silver wire layer 200.
It can be considered that a contact area is defined on the nano-silver wire layer 200, the contact area is an area where the nano-silver wire layer 200 is electrically connected with a subsequently formed trace, and the contact groove is formed in the contact area of the nano-silver wire layer 200.
In the present embodiment, a first contact groove 210 and a plurality of second contact grooves 220 are provided in the nano-silver wire layer 200. Wherein the opening size of the first contact groove 210 is larger than the opening size of the second contact groove 220, and the bottom of the second contact groove 220 is stopped in the nano-silver wire layer 200, so that the second contact groove 220 does not penetrate through the nano-silver wire layer 200. And, as described above, the first contact groove 210 and the second contact groove 220 may be formed to be S-shaped in a direction parallel to the substrate surface, i.e., the first contact groove 210 and the second contact groove 220 may be extended curvilinearly.
In this embodiment, the nano-silver wire layer 200 includes: a nano silver wire film and a protective filler. The forming method comprises the following steps: firstly, forming a nano silver wire film on the substrate 100, wherein the nano silver wire film is provided with a plurality of nano silver wires which are mutually overlapped and laminated; next, a protective material is coated on the upper surface of the thin film of the nano silver wire, and the protective material penetrates into the gap of the nano silver wire to form the protective filler. Wherein, a part of the nano silver wires in the nano silver wire film can still be exposed from the protective filler, so as to ensure that the wires subsequently formed on the nano silver wire layer 200 can be electrically connected with the nano silver wires in the nano silver wire layer 200.
Step S130, referring to fig. 4b specifically, a trace 300 is formed on the nano-silver wire layer 200, and the trace 300 fills the contact groove, so that the trace 300 is electrically connected to the nano-silver wire exposed on the surface of the nano-silver wire conductive layer 200 and electrically connected to the nano-silver wire exposed in the contact groove.
That is, the traces 300 are formed in the contact area of the nano-silver wire layer 200. Also, in the present embodiment, the trace 300 fills the first contact groove 210 and the second contact groove 220.
Based on the interconnection structure of the nano silver wire layer, the invention also provides a touch device, and the touch device comprises the interconnection structure.
Specifically, the touch device includes:
the nano silver wire electrode layer is used for forming a touch electrode of the touch device; wherein, a contact area is defined on the edge position of the nano silver wire electrode layer, and at least one contact groove is arranged in the contact area of the nano silver wire electrode layer; and the number of the first and second groups,
the wiring is used for leading out the touch electrode; specifically, the trace is formed in the contact region of the silver nanowire electrode layer and fills the contact groove, so that the trace is electrically connected to the silver nanowire exposed on the surface of the silver nanowire electrode layer and is electrically connected to the silver nanowire exposed in the contact groove.
Similarly, compared to the conventional touch device (i.e., the traces are formed only on the top surface of the silver nanowire electrode layer), the touch device of the present embodiment has a larger contact area per unit size between the silver nanowire electrode layer and the traces. Therefore, under the condition that the contact area of the silver nanowire electrode layer is not changed, the silver nanowire electrode layer and the trace have smaller contact resistance in the embodiment.
And, in the case of ensuring the same contact resistance, the area of the contact region reserved on the silver nanowire electrode layer in the present embodiment may be smaller, for example, the area of the contact region of the silver nanowire electrode layer may be made 0.3mm or less2Even up to 0.25mm2The following. Compared with the traditional touch device, the area reserved in the contact area of the wiring is smaller, so that narrow-frame display of the touch device is more favorably realized.
In summary, in the interconnection structure of the silver nanowire layer provided by the present invention, the contact groove is disposed in the silver nanowire layer, so that the trace can be formed on the surface of the silver nanowire layer and further fills the contact groove, and the trace can contact with the silver nanowire exposed in the contact groove, thereby greatly increasing the effective contact area between the trace and the silver nanowire layer and correspondingly reducing the contact resistance between the trace and the silver nanowire layer.
When the interconnection structure is applied to a touch device, the area of a contact area required to be reserved on the silver nanowire electrode layer can be reduced under the condition that smaller contact resistance exists between the wiring and the silver nanowire electrode layer, so that the touch screen with a narrow frame is facilitated to be realized.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (8)
1. An interconnect structure for a layer of nanosilver, comprising:
the contact structure comprises a nano silver wire layer, at least one contact groove is arranged in the nano silver wire layer, the at least one contact groove comprises a first contact groove and a second contact groove, the cross section of the first contact groove in the direction perpendicular to the surface of the nano silver wire layer is in an inverted trapezoid shape, and the cross section of the second contact groove in the direction perpendicular to the surface of the nano silver wire layer is in a rectangular shape; and the number of the first and second groups,
and the wiring is formed on the nano silver wire layer and fills the contact groove, so that the wiring is electrically connected with the nano silver wire exposed on the surface of the nano silver wire layer and is electrically connected with the nano silver wire exposed in the contact groove.
2. The interconnection structure of the layer of nanosilver wires of claim 1, wherein the layer of nanosilver wires comprises: the nano silver wire film is provided with a plurality of mutually overlapped nano silver wires; and the protective filler penetrates into the gap of the nano silver wire from the surface of the nano silver wire film.
3. The interconnection structure of the silver nanowire layer as claimed in claim 1, wherein the contact groove has an S-shaped cross-section in a direction parallel to the surface of the silver nanowire layer such that the contact groove extends curvilinearly on the surface of the silver nanowire layer.
4. The interconnection structure of the layer of nanosilver wires of claim 1, wherein the opening size of the first contact trench is larger than the opening size of the second contact trench.
5. A method for forming an interconnection structure of a nano-silver wire layer, comprising:
providing a substrate;
forming a nano silver wire layer on the substrate, wherein at least one contact groove is arranged in the nano silver wire layer, the at least one contact groove comprises a first contact groove and a second contact groove, the cross section of the first contact groove in the direction perpendicular to the surface of the nano silver wire layer is in an inverted trapezoid shape, and the cross section of the second contact groove in the direction perpendicular to the surface of the nano silver wire layer is in a rectangular shape; and the number of the first and second groups,
forming a trace on the nano-silver wire layer, wherein the trace fills the contact groove, so that the trace is electrically connected with the nano-silver wire exposed on the surface of the nano-silver wire layer and is electrically connected with the nano-silver wire exposed in the contact groove.
6. The method of forming an interconnect structure of claim 5, wherein the method of forming the layer of nanosilver comprises:
forming a nano silver wire film on the substrate, wherein the nano silver wire film is provided with a plurality of mutually overlapped nano silver wires; and the number of the first and second groups,
a protective material is coated on the top surface of the thin film of nano-silver wires, and the protective material penetrates into the gaps of the nano-silver wires to form a protective filler.
7. A touch device, comprising:
the contact structure comprises a nano silver wire electrode layer, a contact area is defined at the edge position of the nano silver wire electrode layer, at least one contact groove is arranged in the nano silver wire electrode layer corresponding to the contact area, the at least one contact groove comprises a first contact groove and a second contact groove, the cross section of the first contact groove in the direction vertical to the surface of the nano silver wire layer is in an inverted trapezoid shape, and the cross section of the second contact groove in the direction vertical to the surface of the nano silver wire layer is in a rectangular shape; and the number of the first and second groups,
and the wiring is formed in the contact area of the nano silver wire electrode layer and fills the contact groove, so that the wiring is electrically connected with the nano silver wire exposed on the surface of the nano silver wire electrode layer and is electrically connected with the nano silver wire exposed in the contact groove.
8. The touch device according to claim 7, wherein an area of the contact region of the silver nanowire electrode layer is equal to or less than 0.3mm2。
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| CN203941512U (en) * | 2014-03-31 | 2014-11-12 | 介面光电股份有限公司 | The contact panel with alligatoring structure |
| CN203786704U (en) * | 2014-04-22 | 2014-08-20 | 南昌欧菲光科技有限公司 | Polarizer module and touch display module |
| KR102581950B1 (en) * | 2016-08-29 | 2023-09-22 | 삼성디스플레이 주식회사 | Display device and mufacturing method thereof |
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Application publication date: 20181120 Assignee: Bazhou Yungu Electronic Technology Co., Ltd.|Kunshan Institute of technology new flat panel display technology center Co., Ltd.|Kunshan Guoxian photoelectric Co., Ltd Assignor: The valley (Guan) Technology Co. Ltd. Contract record no.: X2019990000155 Denomination of invention: Interconnection structure of silver nanowire layers and forming method thereof, touch device License type: Common License Record date: 20191030 |
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