CN108845705B - Conductive laminated structure, manufacturing method thereof and display device - Google Patents
Conductive laminated structure, manufacturing method thereof and display device Download PDFInfo
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- CN108845705B CN108845705B CN201810703765.XA CN201810703765A CN108845705B CN 108845705 B CN108845705 B CN 108845705B CN 201810703765 A CN201810703765 A CN 201810703765A CN 108845705 B CN108845705 B CN 108845705B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The invention provides a conductive laminated structure, a manufacturing method thereof and a display device. The method can improve the conductivity of the nano silver wire film on the premise of ensuring the low haze of the nano silver wire film, so that the prepared conductive laminated structure has better touch performance and better application prospect.
Description
Technical Field
The invention relates to the technical field of touch control, in particular to a conductive laminated structure, a manufacturing method of the conductive laminated structure and a display device.
Background
The diameter of the nano silver wire (SNW) is nanometer (1 × 10)-9m) magnitude metallic silver material, because the nanometer silver line has advantages such as good conductivity, chemical properties, antibacterial property and less line width, and the preparation cost is low, has realized the application in a plurality of fields at present. Particularly in the field of touch control, as the prepared nano silver wire film has very high conductivity and transparency and excellent bending performance, the nano silver wire has gradually become a hot material for replacing ITO in recent years and is very likely to become a main material in the field of flexible touch screens in the future.
The nano silver wire film is actually formed by splicing and randomly distributing a plurality of nano silver wires and realizes electric conduction by overlapping the nano silver wires together through intermolecular acting force, and the electric conductivity is a key parameter when the nano silver wire film is applied to a conductive laminated structure. The conductivity is directly related to the lapping condition of the nano silver wires, the lapping probability is usually improved by increasing the concentration of the nano silver wires in the prior art, but the haze problem is caused by the excessively high concentration of the nano silver wires, so that the transparency of the manufactured nano silver wire film and the manufactured conductive laminated structure is reduced. Therefore, the existing technology has limitations on the conductivity and haze of the produced nano silver wire thin film, which restricts the conductivity, touch performance and application prospect of the conductive laminated structure manufactured by adopting the nano silver wire thin film, so that a structure and a method capable of effectively improving the problems are needed.
Disclosure of Invention
The invention aims to provide a conductive laminated structure, a manufacturing method thereof and a display device, and aims to solve the problem that the performance and the application prospect of the conductive laminated structure are limited because the existing nano silver wire film cannot meet the requirements of low haze and high conductivity at the same time.
The invention provides a conductive laminated structure, which comprises:
a substrate;
an induced alignment structure formed on the substrate;
the nano silver wire thin film is formed on the base material and covers the induced alignment structure;
wherein the nano silver wire thin film comprises a plurality of nano silver wires which are crossly lapped in a preset direction and guided by the induced alignment structure.
Preferably, the alignment inducing structure includes grooves including at least a plurality of first grooves extending in a first direction and a plurality of second grooves extending in a second direction, the first grooves and the second grooves crossing each other.
Preferably, the width of the trench is in the range of 1 to 100 times the width of the silver nanowire.
Preferably, the induced alignment structure comprises a plurality of dot structures arranged in an array, and the material of the dot structures has a better affinity for silver than the substrate.
Preferably, the minimum distance between adjacent dot structures in the dot structures arranged in an array is smaller than or equal to the mean value of the lengths of the silver nanowires in the silver nanowire film or the median of the lengths of the silver nanowires.
Preferably, the plurality of silver nanowires are adhered to one or more dot structures, and the dot structures are used as anchoring points, and the plurality of silver nanowires are mutually overlapped on the anchoring points.
And, the invention also provides a method for manufacturing the conductive laminated structure correspondingly, which comprises the following steps:
providing a base material;
forming an induced alignment structure on the substrate;
and forming a nano silver wire film on the substrate, wherein the nano silver wires in the nano silver wire film are guided by the induced alignment structure to be in cross lap joint in a preset direction.
Preferably, the induced alignment structure includes grooves including at least a plurality of first grooves extending in a first direction and a plurality of second grooves extending in a second direction, the first grooves and the second grooves being intersected with each other, and the groove forming method includes:
rubbing the base material along the first direction by using a brush or a roller to form the first groove on the base material;
rubbing the substrate along the second direction by using a brush or a roller to form the second groove on the substrate.
Preferably, the induced alignment structure includes a plurality of dot structures arranged in an array, and the dot structures are formed by an etching process or a screen printing process.
In addition, the invention also correspondingly provides a display device, which comprises the conductive laminated structure, so that the display device has better conductive performance and touch performance.
The invention provides a conductive laminated structure, a manufacturing method thereof and a display device. By adopting the conductive laminated structure and the manufacturing method thereof provided by the invention, the nano silver wires in the manufactured nano silver wire film can be overlapped at a higher probability in a preset direction, so that the conductivity of the nano silver wire film is improved on the premise of ensuring the low haze of the nano silver wire film, and the prepared conductive laminated structure has better conductivity, touch performance and application prospect.
Drawings
FIG. 1 is a flow chart illustrating a method for fabricating a conductive stack structure according to one embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a trench according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a trench-guided nanosilver wire according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a dot structure arranged in an array according to a second embodiment of the present invention;
fig. 5 is a schematic structural diagram of a silver nanowire guided by a midpoint structure according to a second embodiment of the present invention.
Detailed Description
As described in the background art, the current silver nanowire film is difficult to satisfy the requirements of low haze and high conductivity at the same time, so that the touch performance of the conductive laminated structure is limited when the film is applied to the conductive laminated structure. This is because the conductivity of the thin film of silver nanowires is related to the condition of the bonding of the silver nanowires therein. The denser the bonding condition of the nano silver wires, the higher the conductivity is.
However, the formation of the silver nanowires in the silver nanowire film has a certain randomness, that is, the silver nanowires are overlapped along all directions in the silver nanowire film, and the forming direction of the silver nanowires cannot be effectively controlled by the existing process. At present, to improve the lapping condition of the nano silver wires, an effective means is to improve the lapping probability of the nano silver wires by increasing the concentration of the nano silver wire solution in the preparation process. However, the silver nanowire thin film formed by this method may not only increase the particle size of the silver nanowire, but also obstruct the penetration of light due to the stacking of the silver nanowires in all directions, and the haze of the silver nanowire thin film may increase, that is, the transparency of the silver nanowire thin film may decrease. Therefore, the nano silver wire film prepared by the existing method has contradiction between conductivity and haze, and is difficult to meet the requirements of high conductivity and low haze at the same time, so that the performance of the nano silver wire film prepared by the method is limited.
In order to solve the problems in the prior art, a conductive stacked structure, a method for manufacturing the same, and a display device according to the present invention are described in further detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Example one
Since the structure of the conductive stacked structure proposed by the present invention is closely related to the manufacturing method thereof, for convenience of explanation and understanding, the structure and the manufacturing method of the conductive stacked structure are combined and explained in the present embodiment. Fig. 1 is a schematic flow chart of a method for manufacturing a conductive stacked structure according to an embodiment of the present invention, fig. 2 is a schematic structural view of a trench according to an embodiment of the present invention, fig. 3 is a schematic structural view of a trench-guided nano silver wire according to an embodiment of the present invention, and a detailed description is provided for a conductive stacked structure and a method for manufacturing the same according to the present invention with reference to fig. 1 to 3.
First, referring to fig. 1 and fig. 2, step S1 is performed to provide a substrate 100;
specifically, the substrate 100 may be, for example, a glass substrate or a PET plastic (poly-p-phenylene terephthalate plastic), so that the silver nanowire film prepared on the substrate 100 may be used as a transparent conductive film. In addition, the substrate 100 is not limited to the above materials, and the material of the substrate 100 can be changed according to the needs by those skilled in the art, so that the present embodiment is not limited to the above materials.
Next, referring to fig. 1 and 2, step S2 is performed to form an induced alignment structure on the substrate 100;
specifically, the induced alignment structure is formed on the substrate 100 to guide the formation direction of the silver nanowires subsequently formed on the substrate 100, thereby increasing the probability of overlapping the silver nanowire thin film in a predetermined direction.
For this reason, the present embodiment provides an induced alignment structure as a groove. The grooves can play a role in guiding the forming direction of the nano silver wires, because the grooves have larger specific surface area relative to the flat substrate surface, and larger intermolecular acting force can be provided for the nano silver wires, therefore, nano silver crystals can be more easily adsorbed and fixed in the grooves, so that the forming process of the nano silver wires is started in the grooves, and the grooves are in a one-dimensional structure like the nano silver wires, so that the nano silver wires can be more easily guided to be formed towards the length extending direction of the grooves.
Preferably, referring to fig. 2, when the alignment inducing structure is a groove, the groove includes at least a plurality of first grooves 101 extending along a first direction and a plurality of second grooves 102 extending along a second direction, and the first grooves 101 and the second grooves 102 cross each other.
Specifically, the present embodiment intends to form cross-lapped nano-silver wires to improve the lapping condition of the formed nano-silver wire film. For this reason, in the present embodiment, the nano silver wires are respectively lapped and formed in two different directions by the groove structure, and cross lapping is implemented. Referring to fig. 2, the grooves include a plurality of first grooves 101 extending in a first direction and second grooves 102 extending in a second direction, and the first direction and the second direction may be perpendicular to each other for better overlapping effect. The angle between the groove and the substrate (or the edge of the substrate) is not particularly limited, and thus it is within the scope of the present embodiment that the overall direction of the groove is changed relative to the substrate. Since the first direction intersects the second direction, the first trench 101 and the second trench 102 formed correspondingly have an intersection portion.
In addition, in this embodiment, the trenches are not limited to include only the first trench 101 and the second trench 102, and may include, for example, a third trench extending along a third direction, a fourth trench extending along a fourth direction, and the like, which also can have an effect of increasing the overlapping probability of the nano silver wires. However, more forming steps are required to form more grooves, and the haze of the formed silver nanowire film may be affected, so that a person skilled in the art can determine an appropriate groove arrangement according to needs.
Preferably, the method for forming the trench includes:
rubbing the substrate along a first direction by using a brush or a roller to form the first groove 101 on the substrate;
rubbing the substrate along a second direction using a brush or a roller to form the second grooves 102 on the substrate.
Specifically, the trench used in the present embodiment may be formed by, for example, a photolithography and etching process, but the photolithography and etching process may complicate the process steps and increase the cost. However, since the formation process of the nano silver wire is largely a random overlapping process, the trench is not actually required to have high pattern alignment accuracy in, for example, a photolithography process. In this regard, in the present embodiment, another method for forming the groove is provided, in which the groove is formed by rubbing the brush or the roller on the substrate along a predetermined direction. It should be noted that the brush and the roller need to be specially processed to match the brush bristles on the brush with the size of the groove to be formed, or the pattern on the roller matches with the size of the groove to be formed. Furthermore, the surface of the substrate is directly contacted and rubbed by a brush or a roller, so that grooves in a specific direction are formed on the surface of the substrate. In addition, the grooves include a first groove 101 extending in a first direction and a second groove 102 extending in a second direction, so that the first groove 101 and the second groove 102 may be respectively formed by rubbing a brush or a roller on the substrate in the first direction and the second direction, respectively.
Preferably, the width of the groove is in the range of 1 to 100 times the width of the nano silver wire.
Specifically, the width of the silver nanowires may vary, for example, in the range of 10nm to 100nm, depending on the manufacturing process of the silver nanowires. It is feasible to use a 100nm wide trench to induce a 10nm wide silver nanowire, but for example a 100nm wide silver nanowire, it may not be ideal in effect if a trench of around 100nm wide is still used. Therefore, the width of the groove can be selected to be matched according to the width of the nano silver wire. Furthermore, the width of the groove is 1 to 100 times of the width of the silver nanowire, so as to obtain a better alignment induction effect.
In addition, the trenches shown in fig. 2 are only an exemplary structure, and in this embodiment, the spacing between the first trenches 101 and the spacing between the second trenches 102 are not further limited, that is, the spacing between the first trenches 101 may be different, and the spacing between the second trenches 102 may also be different. It is understood that the number of trenches in the same area is also affected by the distance between trenches, and the smaller the distance, the larger the number of trenches in the same area, so that the smaller the distance between trenches can be selected appropriately.
Finally, step S3 is executed to form a silver nanowire film on the substrate, and the silver nanowires in the silver nanowire film are guided by the induced alignment structure to cross-lap in a predetermined direction.
Specifically, the nano silver wires formed in the present embodiment are guided by the grooves, and the nano silver wires are preferentially formed in the grooves and respectively extend along the length direction of the grooves, and then the formed nano silver wires have a greater overlapping probability in the length direction of the grooves, and finally, the overlapping condition of the entire nano silver wire film is improved by forming the nano silver wires which are overlapped in a crossing manner in the predetermined direction.
Preferably, referring to fig. 3, the silver nanowire thin film includes at least a plurality of first silver nanowires 111 and a plurality of second silver nanowires 112; wherein the content of the first and second substances,
a plurality of first silver nanowires 111 are guided by the first grooves and formed along the first direction, and the plurality of first silver nanowires 111 are overlapped with each other;
a plurality of second silver nanowires 112 are guided by the second grooves and formed along the second direction, and the plurality of second silver nanowires 112 are overlapped with each other; and the number of the first and second groups,
the plurality of first silver nanowires 111 and the plurality of second silver nanowires 112 are overlapped with each other.
Specifically, since the trenches in this embodiment include a plurality of first trenches 101 extending along a first direction and a plurality of second trenches 102 extending along a second direction, the first trenches 101 guide a plurality of first silver nanowires 111 to overlap each other along the first direction, and the second trenches 102 guide a plurality of second silver nanowires 112 to overlap each other along the second direction. In addition, since the first trench 101 and the second trench 102 intersect with each other, the plurality of first silver nanowires 111 and the plurality of second silver nanowires 112 formed intersect with each other to form an intersection lap.
It should be noted that fig. 3 only schematically shows the first and second silver nanowires 111 and 112, and although the silver nanowires in this embodiment may be guided by the first and second grooves 101 and 102 to form the first and second silver nanowires 111 and 112 overlapping each other in the first and second directions, respectively, the overlapping of the silver nanowires still has a certain randomness above the substrate. Therefore, silver nanowires formed along other directions and overlapping each other inevitably occur except in the first and second directions. However, among the silver nanowires formed in all directions, only the probability of overlapping the silver nanowires formed in the first direction and the second direction is significantly increased under the guidance of the grooves, thereby ensuring that the haze of the silver nanowire film is not significantly increased. Furthermore, the lapping probability of the nano silver wires formed along the first direction and the second direction is greatly improved and is far higher than that of the nano silver wires in other directions, so that the lapping probability of the nano silver wires is still greatly improved on the whole, the conductivity of the nano silver wire film is greatly improved, and the conductivity and the touch performance of the manufactured conductive laminated structure are greatly improved.
Example two
The difference between the method of the first embodiment and the conductive stacked structure is that the induced alignment structure adopted in the first embodiment is a plurality of dot structures arranged in an array. Fig. 4 is a schematic structural diagram of a dot structure arranged in an array form in the second embodiment of the present invention, fig. 5 is a schematic structural diagram of a silver nanowire guided by a dot structure in the second embodiment of the present invention, and the following describes in detail a structure of a conductive stacked structure proposed in the second embodiment and a manufacturing method thereof with reference to fig. 4 and 5.
Preferably, the induced alignment structure includes a plurality of dot structures 201 arranged in an array, and the material of the dot structures has a better affinity for silver than the substrate.
Specifically, the dot structures 201 arranged in an array may be regarded as a dot matrix as a whole, such as a square dot matrix shown in fig. 4 (if adjacent and nearest dot structures 201 are connected by a line, the smallest repeating unit in the dot matrix is a square, and is referred to as a square dot matrix), and the dot structures 201 may be formed on the substrate 200 by using, for example, a photolithography and etching process or a screen printing process. Also, the dot structure 201 may be further selected from materials having affinity for silver, for example. Thus, during the formation of the nano silver wire, silver may be preferentially adhered to the dot structures 201, and further, with the dot structures 201 as the end points of the nano silver wire, the nano silver wire may be overlapped and formed between the adjacent dot structures 201. Therefore, the lapping probability of the nano silver wires is improved.
Preferably, the minimum distance between adjacent dot structures 201 in the plurality of dot structures 201 is smaller than the mean value of the lengths of the nano silver wires in the nano silver wire film or the median of the lengths of the nano silver wires. Specifically, in order to improve the induced alignment effect of the lattice on the silver nanowires, the minimum spacing between adjacent dot structures 201 is matched with the length of the formed silver nanowires in this embodiment. In the prior art, the approximate range of the length of the formed nano silver wire can be determined by controlling the process conditions, and the verification test can be carried out after the nano silver wire is formed. Therefore, the lengths of a plurality of groups of nano silver wires can be obtained through multiple preparations, and the minimum distance between the adjacent dot structures 201 of the lattice is equal to the average value of the lengths of the nano silver wires or the median of the lengths of the nano silver wires. This has the significance that a better guiding effect can be achieved by avoiding too large or too small a minimum spacing between adjacent dot structures 201 in the lattice. This is because, when the minimum pitch of the adjacent dot structures 201 is too large, if the length of most of the nano silver wires is smaller than the minimum pitch, most of the nano silver wires cannot be formed between the dot structures 201 even if the dot structures 201 are employed, and thus the guiding effect cannot be achieved; when the minimum pitch of the adjacent dot structures 201 is too small, with reference to a square lattice as shown in fig. 4, the nano silver wires may be formed not only in the direction of the minimum pitch but also in other directions (for example, along the diagonal direction of the square), so that the probability of overlapping the dot structures in a predetermined direction may be indirectly reduced.
Preferably, when the silver nanowire film is formed, silver nanowires are adhered to one or more dot structures 201, and the dot structures 201 serve as anchor points, and the silver nanowires are overlapped with each other at the anchor points.
Specifically, since the dot structure 201 is made of a material having affinity for silver material, the nano silver wires are preferentially adhered to the dot structure 201 and the dot structure 201 is used as an anchor point during the formation of the nano silver wire thin film, and a considerable number of the nano silver wires are overlapped with each other through the anchor point.
Preferably, the silver nanowire thin film comprises at least a plurality of first silver nanowires 211 and a plurality of second silver nanowires 212; wherein the content of the first and second substances,
two ends of the first silver nanowire 211 are respectively adhered to two adjacent point structures in a first direction, and a plurality of first silver nanowires 211 are mutually overlapped along the first direction;
two ends of the second silver nanowires 212 are respectively adhered to two adjacent point structures in a second direction, and a plurality of second silver nanowires 212 are mutually overlapped along the second direction; and the number of the first and second groups,
the first direction and the second direction are crossed, and the plurality of first silver nanowires 211 and the plurality of second silver nanowires 212 are crossed and overlapped with each other.
Referring specifically to fig. 4 and 5, the directions such as up, down, left, right, and the like described below are all relative to the directions in fig. 4 and 5, and for any one dot structure 201 in the square lattice shown in fig. 4, the distance between the dot structure 201 above and below the dot structure is the smallest in the first direction (vertical direction in the figure); for any one of the dot structures 201, the interval in the second direction (horizontal direction in the drawing), i.e., the dot structure 201 to the left and right thereof is smallest. Therefore, the adjacent dot structures 201 have the minimum pitch in the first direction and the second direction. Further, referring to the structure of the nano silver lines guided by the adjacent dot structures 201 shown in fig. 5, since the minimum pitch matches the length of the nano silver lines, there is a greater probability that a plurality of first nano silver lines 211 overlapping each other are formed in the first direction and a plurality of second nano silver lines 212 overlapping each other are formed in the second direction under the guidance of the adjacent dot structures 201. And, since the first direction and the second direction intersect, the plurality of first nano silver lines 211 and the plurality of second nano silver lines 212 formed intersect each other accordingly to form a lap joint.
It should be noted that, although it is desirable to guide the alignment of the silver nanowires in a specific direction by the dot structures 201, the lengths of the silver nanowires are not exactly the same but vary within a certain range, and thus, the silver nanowires have randomness. It is inevitable that silver nanowires lap-formed in other directions guided by the dot structures 201, for example, for the dot structures in the square lattice shown in fig. 5, the silver nanowires may lap-formed on the diagonal lines of the square formed by the dot structures, instead of the first and second directions. However, overall, the guiding effect of the dot structure 201 for the nano-silver wires in the first and second directions is still much better than in the other directions. Thus, it can be ensured that the formed nano silver wire has a greater probability of being lapped in the first direction and the second direction.
In addition, instead of the square lattice shown in fig. 4, a lattice of other arrangement such as a triangular lattice or a regular hexagonal lattice may be used. However, slightly different from the above, for example, for a triangular lattice or a regular hexagonal lattice, for any one dot structure, the nearest (smallest-spaced) dot structure adjacent thereto must have 3 and be located in three directions, respectively. Therefore, when a triangular lattice or a regular hexagonal lattice is adopted, the lapping probability of the nano silver wires in the corresponding three directions can be improved. In any case, whatever the lattice is selected, the nano silver wires are guided to form at least in two directions and are in cross lapping, so that the conductivity of the nano silver wire film is further improved. Therefore, the skilled person can select a suitable array arrangement according to the actual requirement.
In addition, the invention also correspondingly provides a display device, which comprises the conductive laminated structure, so that the display device also has better conductive performance, touch performance, market value and application prospect.
In summary, in the conductive stacked structure, the manufacturing method thereof, and the display device provided by the present invention, the induced alignment structure is prepared on the substrate to guide the formation of the nano-silver wires by using the induced alignment structure, so that the nano-silver wires are cross-lapped in a predetermined direction to form the nano-silver wire thin film.
Furthermore, the invention provides a method for preparing a conductive laminated structure, which adopts a groove or an array-type point structure as an induced alignment structure, so that the nano silver wires in the nano silver wire film are overlapped at a higher probability in a preset direction, and the conductivity of the nano silver wire film is improved on the premise of ensuring the low haze of the nano silver wire film, so that the prepared conductive laminated structure has better conductivity, touch performance and better application prospect.
It will be apparent to those skilled in the art that various changes and modifications may be made in the invention without departing from the spirit and scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (6)
1. A conductive laminate structure, comprising:
a substrate;
the induced alignment structure is formed on the substrate and comprises a plurality of point structures arranged in an array manner, and the affinity of the point structures to silver is superior to that of the substrate;
the nano silver wire thin film is formed on the base material and covers the induced alignment structure;
wherein the nano silver wire thin film comprises a plurality of nano silver wires which are crossly lapped in a preset direction and guided by the induced alignment structure.
2. The conductive stack according to claim 1, wherein a minimum pitch between adjacent ones of the dot structures in the array arrangement is less than or equal to an average of the lengths of the silver nanowires in the silver nanowire film or a median of the lengths of the silver nanowires.
3. The conductive stack according to claim 2, wherein the plurality of silver nanowires are attached to one or more dot structures and have the dot structures as anchor points, and wherein the plurality of silver nanowires are overlapped with each other at the anchor points.
4. A method of manufacturing a conductive laminated structure, comprising:
providing a base material;
forming an induced alignment structure on the substrate, wherein the induced alignment structure comprises a plurality of dot structures arranged in an array manner, and the material of the dot structures has affinity to silver which is superior to that of the substrate;
and forming a nano silver wire film on the substrate, wherein the nano silver wires in the nano silver wire film are guided by the induced alignment structure to be in cross lap joint in a preset direction.
5. The method for manufacturing a conductive laminated structure according to claim 4, wherein the dot structure is formed by an etching process or a screen printing process.
6. A display device characterized by comprising the conductive laminated structure described in any one of claims 1 to 5.
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