CN107190317A - A kind of large scale class single crystal seed and preparation method thereof - Google Patents
A kind of large scale class single crystal seed and preparation method thereof Download PDFInfo
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- CN107190317A CN107190317A CN201710580748.7A CN201710580748A CN107190317A CN 107190317 A CN107190317 A CN 107190317A CN 201710580748 A CN201710580748 A CN 201710580748A CN 107190317 A CN107190317 A CN 107190317A
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- seed
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- single crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
This application discloses a kind of large scale class single crystal seed and preparation method thereof, the large scale class single crystal seed includes multiple compact arranged seed crystal monomers, the predeterminated position above welding of all seed crystal monomers is integrated, and there are splicing seams below the predeterminated position of the seed crystal monomer, the preparation method includes making multiple seed crystals monomer；The seed crystal monomer is arranged closely in crucible bottom；The surface of the seed crystal monomer is carried out using half process of smelting micro- molten；After micro- melt to the predeterminated position of the seed crystal monomer, start directional solidification, solid liquid interface is moved up until all seed crystal monomers are crystallized.Above-mentioned large scale class single crystal seed and preparation method thereof, can prevent influence of the splicing seams to ingot casting, effective to prevent polysilicon forming core during class monocrystalline ingot casting.
Description
Technical field
The invention belongs to ingot casting technology field, more particularly to a kind of large scale class single crystal seed and preparation method thereof.
Background technology
In photovoltaic industry, what is be currently mainly used is the battery that czochralski method monocrystalline silicon and casting polysilicon make
Piece.Compared with pulling single crystal, polycrystalline silicon ingot casting possesses that yield is big and the low advantage of cost, but the conversion efficiency of polysilicon chip is wanted
Less than monocrystalline, then a kind of class monocrystalline fallen between arises at the historic moment.The class monocrystalline production that this use ingot wayses make
Product, using dislocation-free single crystal to be laid on crucible bottom as seed crystal is used for forming core, and to ensure in seed crystal process of deployment
Splicing seams do not fall silicon, that is, reduce the quantity of splicing seams as far as possible.
The most popular method of institute is as follows at present：By the whole rod dice shape of pulling single crystal, then with 36 pieces (according to stove
Platform size and varied number) it is laid on crucible bottom and is used as seed crystal, this laying method can bring substantial amounts of splicing seams, to square
Undamaged make of seed crystal requires high, and the gimmick of putting to employee requires high.Once producing splicing seams, the forming core point of on-monocrystalline is just
Quality of the meeting strong influence to the whole ingot of class monocrystalline.Immediate scheme is at present：Strip is made using the mode cut vertically
Seed crystal of the seed crystal of shape without making square block, but this preparation method can only do bigger seed crystal, reduce the number of splicing seams
Measure and can not thoroughly eliminate splicing seams.
The content of the invention
To solve the above problems, the invention provides a kind of large scale class single crystal seed and preparation method thereof, can prevent
Influence of the splicing seams to ingot casting, it is effective to prevent polysilicon forming core during class monocrystalline ingot casting.
A kind of large scale class single crystal seed that the present invention is provided, including multiple compact arranged seed crystal monomers, all institutes
The predeterminated position above welding for stating seed crystal monomer is integrated, and has splicing seams below the predeterminated position of the seed crystal monomer.
It is preferred that, in above-mentioned large scale class single crystal seed, the scope of the predeterminated position is from the seed crystal monomer
5mm below top to 10mm.
It is preferred that, in above-mentioned large scale class single crystal seed, entirety and crucible that all seed crystal monomers are arranged in
Shape match.
It is preferred that, in above-mentioned large scale class single crystal seed, the quantity of the seed crystal monomer is 25 pieces or 36 pieces.
It is preferred that, in above-mentioned large scale class single crystal seed, the diameter range of the seed crystal monomer is：156.5-
156.8mm。
It is preferred that, in above-mentioned large scale class single crystal seed, the scope of the deflection angle of the seed crystal monomer is：0 ° extremely
90°。
A kind of preparation method for large scale class single crystal seed that the present invention is provided, including：
Make multiple seed crystals monomer；
The seed crystal monomer is arranged closely in crucible bottom；
The surface of the seed crystal monomer is carried out using half process of smelting micro- molten；
After micro- melt to the predeterminated position of the seed crystal monomer, start directional solidification, solid liquid interface is moved up until all
Seed crystal monomer crystallization.
It is preferred that, in the preparation method of above-mentioned large scale class single crystal seed, the scope of the predeterminated position is from described
5mm to 10mm below the top of seed crystal monomer.
Above-mentioned large scale class single crystal seed provided by foregoing description, the present invention and preparation method thereof, due to this
Large scale class single crystal seed includes more than multiple compact arranged seed crystal monomers, the predeterminated position of all seed crystal monomer melting
Being connected into below integral type, and the predeterminated position of the seed crystal monomer has splicing seams, therefore, it is possible to prevent splicing seams to ingot casting
Influence, it is effective to prevent polysilicon forming core during class monocrystalline ingot casting.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
The schematic diagram for the first large scale class single crystal seed that Fig. 1 provides for the embodiment of the present application；
The schematic diagram of the preparation method for the first large scale class single crystal seed that Fig. 2 provides for the embodiment of the present application.
Embodiment
The core concept of the present invention is to provide a kind of large scale class single crystal seed and preparation method thereof, can prevent to splice
The influence to ingot casting is stitched, it is effective to prevent polysilicon forming core during class monocrystalline ingot casting.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
The first large scale class single crystal seed that the embodiment of the present application is provided is as shown in figure 1, Fig. 1 carries for the embodiment of the present application
The schematic diagram of the first the large scale class single crystal seed supplied, the large scale class single crystal seed includes multiple compact arranged seed crystal lists
Body 1 (part that dotted line frame fences up), the predeterminated position above welding of all seed crystal monomers 1 is integrated and described
There are splicing seams 2 below the predeterminated position of seed crystal monomer 1.
It should be noted that above-mentioned splicing seams are seed crystal monomers arrange after inherently inevitably, only exist
Predeterminated position micro- molten mode utilized above is by the Seamlines removing between these seed crystal monomers, the situation without any gap
Under, during class monocrystalline is grown using this seed crystal, just no longer occur leakage silicon phenomenon.
The first large scale class single crystal seed provided by foregoing description, the embodiment of the present application, due to including many
Individual compact arranged seed crystal monomer, the predeterminated position above welding of all seed crystal monomers is integrated, and the seed crystal
There are splicing seams below the predeterminated position of monomer, therefore, it is possible to prevent influence of the splicing seams to ingot casting, polysilicon is effectively prevented
The forming core during class monocrystalline ingot casting.
Second of large scale class single crystal seed that the embodiment of the present application is provided, is in the first above-mentioned large scale class monocrystalline seed
On the basis of crystalline substance, in addition to following technical characteristic：
The scope of the predeterminated position is from 5mm to 10mm below the top of the seed crystal monomer.
In such a case, it is possible to it is micro- molten to the surface progress of seed crystal monomer using half process of smelting, when solid liquid interface is reached
During 5mm to 10mm, directional solidification is begun to, moves up solid liquid interface until all melts crystallization, this allows for seed crystal monomer
A part forms the entirety of a seamless connection above, is prevented effectively from Lou silicon phenomenon, in addition, this is only a preferred range, when
The value of other predeterminated positions can also be so set according to actual conditions, be not intended to limit herein.
The third large scale class single crystal seed that the embodiment of the present application is provided, is in the first above-mentioned large scale class monocrystalline seed
On the basis of crystalline substance, in addition to following technical characteristic：
The entirety and the shape of crucible that all seed crystal monomers are arranged in match.
It should be noted that it is necessary in view of subsequently growing the crucible that brilliant process is utilized when this seed crystal is made
Shape, thus after the two is matched, it is possible to it is more easily long brilliant, improve operating efficiency.
The 4th kind of large scale class single crystal seed that the embodiment of the present application is provided, is in the first above-mentioned large scale class monocrystalline seed
On the basis of crystalline substance, in addition to following technical characteristic：
The quantity of the seed crystal monomer is 25 pieces or 36 pieces.
It should be noted that the scheme correspondence and different types of crucible size of the seed crystal monomer of both quantity, can be with
Determine to be melt into an entirety by the seed crystal monomer of which kind of quantity is micro- according to actual needs.
The 5th kind of large scale class single crystal seed that the embodiment of the present application is provided, is in the first above-mentioned large scale class monocrystalline seed
On the basis of crystalline substance, in addition to following technical characteristic：
The diameter range of the seed crystal monomer is：156.5-156.8mm.
It should be noted that the seed crystal monomer of this diameter range is relatively common, it is easy to operate.
The 6th kind of large scale class single crystal seed that the embodiment of the present application is provided, be it is above-mentioned the first to the 5th kind of large scale
In class single crystal seed it is any on the basis of, in addition to following technical characteristic：
The scope of the deflection angle of the seed crystal monomer is：0 ° to 90 °.
That is, two adjacent seed crystal monomers can select different deflection angles to go cutting when making, herein
It is not intended to limit.
The preparation method for the first large scale class single crystal seed that the embodiment of the present application is provided is as shown in Fig. 2 Fig. 2 is this Shen
Please the schematic diagram of the preparation method of the first large scale class single crystal seed that provides of embodiment, this method comprises the following steps：
S1：Make multiple seed crystals monomer；
Specifically, a major diameter dislocation-free single crystal silicon rod can be selected, go end to end, to cut into setting length dimension, will go
Silicon single crystal rod end to end goes flaw-piece to be changed into square rod, and square rod is cut into square by setting length (about 30MM but do not limit), obtained
Final monocrystalline square, seed crystal monomer is obtained by monocrystalline square progress pickling impurity removal duty.
S2：The seed crystal monomer is arranged closely in crucible bottom；
Specifically, the seed crystal monomer of square block is laid in above crucible bottom, crucible and heater, crucible are housed sideways
Its complementary space do not load other silicon materials.
S3：The surface of the seed crystal monomer is carried out using half process of smelting micro- molten；
S4：After micro- melt to the predeterminated position of the seed crystal monomer, start directional solidification, solid liquid interface is moved up until institute
Some seed crystal monomer crystallizations.
In the step, because initial nucleation crystallization is the process occurred on single crystal seed monomer surface, grow out
Be also big crystal grain class monocrystalline, at the same time, during fusing and crystallization, the seed crystal monomer splicing seams laid also by
Be completely covered as class single crystalline layer, through supercooling, come out of the stove after annealing take off crucible both seed crystal of the monoblock without splicing seams, by gained seed
Crystalline substance carries out cutting trimming, and large scale class single crystal seed is can be used as after pickling, for subsequently carrying out melting down ingot casting, it is seen then that pass through
Fritting directional solidification method, makes single crystal seed be crystallized from after melting, and formation is enough to cover the melt layer of splicing seams, so as to obtain large scale
Class single crystal seed.
The preparation method for second of large scale class single crystal seed that the embodiment of the present application is provided, is in the first above-mentioned big chi
On the basis of the preparation method of very little class single crystal seed, in addition to following technical characteristic：
The scope of the predeterminated position is from 5mm to 10mm below the top of the seed crystal monomer.
In such a case, it is possible to it is micro- molten to the surface progress of seed crystal monomer using half process of smelting, when solid liquid interface is reached
During 5mm to 10mm, directional solidification is begun to, moves up solid liquid interface until all melts crystallization, this allows for seed crystal monomer
A part forms the entirety of a seamless connection above, is prevented effectively from Lou silicon phenomenon, in addition, this is only a preferred range, when
The value of other predeterminated positions can also be so set according to actual conditions, be not intended to limit herein.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (8)
1. a kind of large scale class single crystal seed, it is characterised in that including multiple compact arranged seed crystal monomers, all seeds
The predeterminated position above welding of brilliant monomer is integrated, and has splicing seams below the predeterminated position of the seed crystal monomer.
2. large scale class single crystal seed according to claim 1, it is characterised in that the scope of the predeterminated position is from institute
State 5mm to 10mm below the top of seed crystal monomer.
3. large scale class single crystal seed according to claim 1, it is characterised in that all seed crystal monomers are arranged in
Entirety and the shape of crucible match.
4. large scale class single crystal seed according to claim 1, it is characterised in that the quantity of the seed crystal monomer is 25 pieces
Or 36 pieces.
5. large scale class single crystal seed according to claim 1, it is characterised in that the diameter range of the seed crystal monomer
For：156.5-156.8mm.
6. the large scale class single crystal seed according to claim any one of 1-5, it is characterised in that the seed crystal monomer it is inclined
The scope of gyration is：0 ° to 90 °.
7. a kind of preparation method of large scale class single crystal seed, it is characterised in that including：
Make multiple seed crystals monomer；
The seed crystal monomer is arranged closely in crucible bottom；
The surface of the seed crystal monomer is carried out using half process of smelting micro- molten；
After micro- melt to the predeterminated position of the seed crystal monomer, start directional solidification, solid liquid interface moves up the seed until all
Brilliant monomer crystallization.
8. the preparation method of large scale class single crystal seed according to claim 7, it is characterised in that the predeterminated position
Scope is from 5mm to 10mm below the top of the seed crystal monomer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710580748.7A CN107190317A (en) | 2017-07-17 | 2017-07-17 | A kind of large scale class single crystal seed and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710580748.7A CN107190317A (en) | 2017-07-17 | 2017-07-17 | A kind of large scale class single crystal seed and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108823638A (en) * | 2018-09-10 | 2018-11-16 | 孟静 | The preparation method of large scale silicon ingot used for solar batteries |
| CN108950682A (en) * | 2018-07-11 | 2018-12-07 | 晶科能源有限公司 | Polycrystalline cast ingot method |
| CN109137069A (en) * | 2018-09-10 | 2019-01-04 | 孟静 | The preparation facilities of large scale silicon ingot used for solar batteries |
| CN109161965A (en) * | 2018-09-12 | 2019-01-08 | 晶科能源有限公司 | Cast class method for preparing single crystal |
| CN111364100A (en) * | 2020-04-30 | 2020-07-03 | 江苏协鑫硅材料科技发展有限公司 | Monocrystalline silicon ingot and preparation method thereof, cast monocrystalline silicon piece and preparation method thereof |
| CN111647941A (en) * | 2020-06-01 | 2020-09-11 | 苏州阿特斯阳光电力科技有限公司 | Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot prepared by same |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108950682A (en) * | 2018-07-11 | 2018-12-07 | 晶科能源有限公司 | Polycrystalline cast ingot method |
| CN108823638A (en) * | 2018-09-10 | 2018-11-16 | 孟静 | The preparation method of large scale silicon ingot used for solar batteries |
| CN109137069A (en) * | 2018-09-10 | 2019-01-04 | 孟静 | The preparation facilities of large scale silicon ingot used for solar batteries |
| CN109161965A (en) * | 2018-09-12 | 2019-01-08 | 晶科能源有限公司 | Cast class method for preparing single crystal |
| CN111364100A (en) * | 2020-04-30 | 2020-07-03 | 江苏协鑫硅材料科技发展有限公司 | Monocrystalline silicon ingot and preparation method thereof, cast monocrystalline silicon piece and preparation method thereof |
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| CN111647941B (en) * | 2020-06-01 | 2022-08-12 | 苏州阿特斯阳光电力科技有限公司 | Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot prepared by same |
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Application publication date: 20170922 |