CN108808447A - A kind of organic laser thin-film device and preparation method thereof based on high efficiency energy transfer - Google Patents
A kind of organic laser thin-film device and preparation method thereof based on high efficiency energy transfer Download PDFInfo
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- CN108808447A CN108808447A CN201810602041.6A CN201810602041A CN108808447A CN 108808447 A CN108808447 A CN 108808447A CN 201810602041 A CN201810602041 A CN 201810602041A CN 108808447 A CN108808447 A CN 108808447A
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- energy transfer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
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Abstract
The invention discloses a kind of organic laser thin-film devices and preparation method thereof based on high efficiency energy transfer, belong to laser technology field.The present invention under the premise of keeping its spontaneous amplification radiation, forms effective energy transfer, realizes the organic laser thin-film device of more Low threshold by building the Subjective and Objective gain system of a singlet-singlet by adjusting the ratio of Subjective and Objective polymer.Thin-film device after adulterating simultaneously has smooth film layer.Method used in the present invention is of low cost, prepare it is simple and fast, can be applied to realize high-performance organic laser apparatus.
Description
Technical field
The invention belongs to laser technology fields, and in particular to a kind of organic laser thin-film device based on high efficiency energy transfer
And preparation method thereof.
Background technology
Since finding the conductivity in conjugated polymer, high-performance optical electronic device of the research based on organic matter is ground
Work is studied carefully more to be paid close attention to by everybody, therefore various organic optoelectronic devices increasingly move towards to be commercialized.Currently, being used for light to realize
The best polymer system of electricity application, usually follows two lines.The first is photochemistry and electricity of the exploitation with special properties
New polymers molecule；Second is to mix two or more known compounds, is had and arbitrary homogenous material to obtain
Different property new composite.
In various luminescence systems, due to the electrical and optical properties of homogenous material adjustability and may relate to biology
The optoelectronic applications of polymer, thus the blending of polymer play the role of it is particularly significant.But the if master of blend polymer
The raw micron-scale phase separation of mian part distribution, it will part changes fluorescence resonance energy transfer (FRET) efficiency, and may be in membrane wave
Internal increase light loss channel is led, so as to influence ASE performances.For example, poly- (9,9- dioctyl fluorenes-diazosulfide)
(F8BT) object gain is improved, on sample thin film though doping can reduce threshold value with poly- (9,9- dioctyl fluorene) (PFO)
The phenomenon that inevitably producing phase separation.This will influence and inhibit the generation and transmission of charge carrier, subsequently result in compared with
The thermal stability and optical stability of difference.
Invention content
Goal of the invention：In order to overcome the deficiencies in the prior art, the present invention to provide a kind of based on high efficiency energy transfer
Organic laser thin-film device and preparation method thereof, by building the Subjective and Objective laser gain system of singlet-singlet, effectively
The ratio for adjusting Subjective and Objective light emitting polymer, realizes the optimization of output performance of laser.This method make it is quick, simple for process, at
This is cheap.
Technical solution：To achieve the above object, the technical solution adopted by the present invention is：
A kind of organic laser thin-film device based on high efficiency energy transfer, the device are made of following functional layer：Substrate
(1), gain media (2).And gain media is prepared on substrate by way of spin coating, blade coating or vapor deposition；Wherein gain is situated between
Matter (2) is the host-guest system system of singlet-singlet, and main body is fluorenyl derivative blue light gain media, and object is trapezoidal
Block copolymer gain media.
The doping mass ratio of the host-guest system system of the singlet-singlet, Subjective and Objective is 10%~90%.
More specifically, the gain media (2) can select poly- [9,9- dioctyl fluorene -2,7- diyl] (PFO), gather
[(9,9- di-n-octyl fluorenyl -2,7- diyls)-alt- (benzo [2,1,3] thiadiazoles -4,8- diyls)] (F8BT), organic red light
Gain media poly- [2- methoxyl groups -5- (2- ethyl hexyl oxies) -1,4- phenylacetylenes] (MEH-PPV) or trapezoidal indenofluorene-benzo thiophene
One kind in aromatic oxadiozole polymer fa derivative (nLF-BT) or in which several mixtures.
The trapezoidal indenofluorene-diazosulfide polymer derivant (nLF-BT) has the general formula knot being shown below
Structure, and as the object of doping system.
Wherein, R is one kind in C1-C30 alkyl, alkoxy, alkane phenyl, alkoxyl phenyl；N is integer, and 3≤n≤
100。
In the above-mentioned technical solutions, as preferred gain media in 80~200nm.
Advantageous effect：A kind of organic laser thin-film device and its preparation side based on high efficiency energy transfer provided by the invention
Method has the advantage that compared with prior art：The present invention is utilized by the energy transfer system of structure singlet-singlet
Itself stimulated radiation of bulk gain medium, which releases energy, is transferred to object realization laser output, to reduce spontaneous radiation threshold value
Or the threshold value of laser.This method can obtain the film morphology of high quality simultaneously, can effectively overcome phase separation, improve laser and increase
Beneficial performance and output performance of laser.The method and process of the present invention is easy, it is quick, of low cost to prepare, and can be applied to realize high property
It can organic laser apparatus.
Description of the drawings
Fig. 1 is the structure chart of the made thin-film device of test；
Fig. 2 is the chemical constitution example of part Subjective and Objective gain material；
Fig. 3 is the absorption transmitting test chart of PFO and 2LF-BT；
The film morphology test result of Fig. 4 different levels of doping；
Fig. 5 be in quartz substrate different levels of doping spontaneous radiation light amplification with the variation diagram of pump energy；
The arrogant radiant light of Fig. 6 devices sends out relational graph of the big and radiation lifetime with different levels of doping.
Specific implementation mode
The present invention passes through by the Subjective and Objective gain system of one singlet-singlet of structure and adjusts Subjective and Objective polymer
Ratio form effective energy transfer under the premise of keeping its spontaneous amplification radiation, realize the organic laser of more Low threshold
Thin-film device.Thin-film device after adulterating simultaneously has smooth film layer.Method used in the present invention is of low cost, system
It is standby simple and fast, it can be applied to realize high-performance organic laser apparatus.
Embodiment
According to following embodiments, the present invention can be better understood from.However, as it will be easily appreciated by one skilled in the art that real
It applies specific material proportion, process conditions and its result described in example and is merely to illustrate the present invention, without that should will not limit
The present invention described in detail in claims processed.
The present invention provides a kind of organic laser thin-film device shifted based on high efficiency energy, as seen from Figure 1 mainly by
Substrate (1) and gain media (2) composition, the structure of thin-film device are as shown in Figure 1.
Wherein gain media (2) is the host-guest system system of singlet-singlet, and the doping mass ratio of Subjective and Objective is
10%~90%.
Specifically, the organic light emission small molecule is fluorenyl, spiro-bisfluorene base, anthryl or pyrenyl small molecule；The list
Dispersion multi-arm structure light-emitting macromolecular is fluorenyl monodisperse multi-arm structure light-emitting macromolecular；Conjugate light-emitting macromolecule is fluorenyl, spiral shell
Double fluorene base, anthryl or pyrenyl conjugate light-emitting macromolecule.
More specifically, the gain media (2) can select poly- [9,9- dioctyl fluorene -2,7- diyl] (PFO), gather
[(9,9- di-n-octyl fluorenyl -2,7- diyls)-alt- (benzo [2,1,3] thiadiazoles -4,8- diyls)] (F8BT), organic red light
Gain media poly- [2- methoxyl groups -5- (2- ethyl hexyl oxies) -1,4- phenylacetylenes] (MEH-PPV) or trapezoidal indenofluorene-benzo thiophene
One kind in aromatic oxadiozole polymer fa derivative (nLF-BT) or in which several mixtures.
Thin-film device preparation is as follows：
The first step：Substrate cleans, and substrate (1), substrate is selected to use acetone, ethyl alcohol, ultra-pure water to be cleaned by ultrasonic successively 1 time, wash
It is put into after complete in baking oven dry.
Second step：Solution is prepared, by selecting solution of the chloroform solvent to gain media (2) compound concentration for 15mg/mL,
Clean magneton is added in the solution prepared and is placed on thermal station stirring, heating temperature is 60 DEG C, stir speed (S.S.) 1000rpm, when stirring
Between 2h or more.
Third walks：Prepared by device, select the substrate needed, the solution configured is uniformly spin-coated on substrate using sol evenning machine
On, spin coating rotating speed is 2000rpm, spin-coating time 60s, spin coating acceleration are 4000rpm/s, and the film thickness of preparation is 80-
150nm.It is the solvent that removal film surface is extra after spin coating is complete, the device made is placed in thermal station and is annealed 10 points for 50 DEG C
Clock.
Embodiment 1
It selects transparent quartz plate for substrate, selects the gain media of the host-guest system system of singlet-singlet, it is main
Body selects PFO, object choice lasing gain medium 2LF-BT, and general structure is as shown in Figure 2.The ratio of PFO gain medias is：
0%, 10%, 30%, 50%, 70%, 90%, 100%, sample preparation is as shown in specific implementation mode.Fig. 3 carries out difference to it
The absorption spectrum of the absorption transmitting test of doping ratio, the emission spectrum PL of PFO and our material 2LF-BT have bigger
Overlapping realizes effectiveThe energy transmission of (Foster FRET).
Embodiment 2
It selects transparent quartz plate for substrate, selects the gain media of the host-guest system system of singlet-singlet, it is main
Body selects PFO, object choice lasing gain medium 2LF-BT.The ratio of PFO gain medias is：0%, 10%, 30%, 50%,
70%, 90%, 100%, sample preparation is as shown in specific implementation mode.Fig. 4 is the film morphology test of different levels of doping, ladder
The doping system of shape indeno fluorenyl and PFO have very excellent filming performance.
Embodiment 3
It selects transparent quartz plate for substrate, selects the gain media of the host-guest system system of singlet-singlet, it is main
Body selects PFO, object choice lasing gain medium 2LF-BT.The ratio of PFO gain medias is：0%, 10%, 30%, 50%,
70%, 90%, 100%, sample preparation is as shown in specific implementation mode.Fig. 5 shows the spontaneous amplification test of doping system
(ASE) test, with the increase of PFO doping ratios, ASE threshold values are from 65 original μ J/cm2Under (PFO of 0% concentration) is quick
Drop to 4.8 μ J/cm2(PFO of 30% concentration), it can be seen that threshold is amplified in the spontaneous radiation of the organic laser thin-film device after doping
Value is lower than the spontaneous radiation of pure lasing gain medium amplification threshold value.
Embodiment 4
It selects transparent quartz plate for substrate, selects the gain media of the host-guest system system of singlet-singlet, it is main
Body selects PFO, object choice lasing gain medium 2LF-BT.The ratio of PFO gain medias is：0%, 10%, 30%, 50%,
70%, 90%, 100%, sample preparation is as shown in specific implementation mode.
The spontaneous radiation amplification threshold value of the organic laser thin-film device of Fig. 6 displayings and radiation lifetime are with lasing gain medium ratio
The different trend charts of example.It can be seen that there is minimum spontaneous radiation to amplify threshold value when PFO doping ratios are 30%.
The above is only a preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (8)
1. a kind of organic laser thin-film device based on high efficiency energy transfer, which is characterized in that by substrate（1）And it is uniformly heavy thereon
Gain media made of product（2）It constitutes, wherein the gain media（2）For the host-guest system body of singlet-singlet
System, main body are fluorenyl derivative blue light gain media, and object is trapezoidal block copolymer gain media.
2. a kind of organic thin film laser part based on high efficiency energy transfer according to claim 1, which is characterized in that institute
The doping mass ratio of the host-guest system system for the singlet-singlet stated, Subjective and Objective is：Main body：Object=10% ~ 90%.
3. a kind of organic thin film laser part based on high efficiency energy transfer according to claim 1, which is characterized in that institute
The gain media stated（2）For in PFO, F8BT, MEH-PPV or nLF-BT one kind or in which several mixtures.
4. a kind of organic thin film laser part based on high efficiency energy transfer according to claim 1 or 3, feature exist
In the gain media（2）Main body be PFO.
5. a kind of organic thin film laser part based on high efficiency energy transfer according to claim 1 or 3, feature exist
In the gain media（2）Object be nLF-BT, general formula structure is as follows：
Wherein, R C1-C30One kind in alkyl, alkoxy, alkane phenyl, alkoxyl phenyl；N is integer, and 3≤n≤100.
6. a kind of organic laser thin-film device based on high efficiency energy transfer according to claim 1, which is characterized in that institute
The gain media stated（2）Thickness be 80 ~ 200 nm.
7. a kind of organic laser thin-film device based on high efficiency energy transfer according to claim 1, which is characterized in that institute
The gain media stated（2）Depositional mode be spin coating, coining, spray printing, vacuum evaporation or inkjet printing in one kind.
8. a kind of preparation of organic laser thin-film device based on high efficiency energy transfer according to any one of claims 1 to 7
Method, which is characterized in that be as follows：
The first step：Substrate cleans, and substrate uses acetone, ethyl alcohol, ultra-pure water to be cleaned by ultrasonic successively, then the drying in baking oven；
Second step：Solution is prepared, using chloroform as gain media that solvent compound concentration is 15 mg/mL（2）Solution, thermal station stirring,
Heating temperature is 60 DEG C, and stir speed (S.S.) is 1000 rpm, 2 h or more of mixing time；
Third walks：Prepared by device, by gain media（2）On substrate, spin coating rotating speed is 2000 rpm, spin coating to the uniform spin coating of solution
Time is 60 s, spin coating acceleration is 4000 rpm/s, is the solvent that removal film surface is extra after spin coating is complete, will make
Device place thermal station in 50 DEG C anneal 10 minutes.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110077110A (en) * | 2019-05-14 | 2019-08-02 | 青岛科技大学 | A kind of method of inkjet printing production graphene enhancement type flexibility dyestuff Random Laser |
| US20210203122A1 (en) * | 2019-12-29 | 2021-07-01 | Hong Kong Baptist University | Tunable laser materials comprising solid-state blended polymers |
| CN113410745A (en) * | 2021-06-17 | 2021-09-17 | 南京邮电大学 | Wavelength-tunable organic thin film laser device, preparation method and application thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110077110A (en) * | 2019-05-14 | 2019-08-02 | 青岛科技大学 | A kind of method of inkjet printing production graphene enhancement type flexibility dyestuff Random Laser |
| US20210203122A1 (en) * | 2019-12-29 | 2021-07-01 | Hong Kong Baptist University | Tunable laser materials comprising solid-state blended polymers |
| WO2021135862A1 (en) * | 2019-12-29 | 2021-07-08 | Hong Kong Baptist University | Tunable laser materials comprising solid-state blended polymers |
| US11837842B2 (en) * | 2019-12-29 | 2023-12-05 | Hong Kong Baptist University | Tunable laser materials comprising solid-state blended polymers |
| CN113410745A (en) * | 2021-06-17 | 2021-09-17 | 南京邮电大学 | Wavelength-tunable organic thin film laser device, preparation method and application thereof |
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