CN108807668A - Based on the high-performance memory resistor of metal oxide oxygen concentration gradient and its preparation - Google Patents
Based on the high-performance memory resistor of metal oxide oxygen concentration gradient and its preparation Download PDFInfo
- Publication number
- CN108807668A CN108807668A CN201810662587.0A CN201810662587A CN108807668A CN 108807668 A CN108807668 A CN 108807668A CN 201810662587 A CN201810662587 A CN 201810662587A CN 108807668 A CN108807668 A CN 108807668A
- Authority
- CN
- China
- Prior art keywords
- functional layer
- sputtering
- metal oxide
- memristor
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 81
- 239000001301 oxygen Substances 0.000 title claims abstract description 77
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 34
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000002346 layers by function Substances 0.000 claims abstract description 77
- 238000004544 sputter deposition Methods 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 50
- 230000008569 process Effects 0.000 claims description 29
- 238000001259 photo etching Methods 0.000 claims description 25
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 239000010410 layer Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 238000012360 testing method Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 230000012010 growth Effects 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 230000004807 localization Effects 0.000 abstract description 5
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 229910003070 TaOx Inorganic materials 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 238000005457 optimization Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 238000002604 ultrasonography Methods 0.000 description 4
- 229910017107 AlOx Inorganic materials 0.000 description 3
- 229910016553 CuOx Inorganic materials 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- -1 HfOx Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Semiconductor Memories (AREA)
Abstract
The invention discloses a kind of based on the high-performance memory resistor of metal oxide oxygen concentration gradient and its preparation, wherein the device cell of memristor includes top electrode, functional layer and lower electrode from top to bottom, the functional layer is metal oxide, and the oxygen content in the functional layer changes in gradient.The present invention is improved by inside composition to crucial functional layer in the memristor and its preparation method etc., the metal oxide changed in gradient using oxygen content is as functional layer, the break-make of localization conductive filament is in elevated oxygen level area, the stability, consistency and switching speed of memory resistor can be improved in the randomness break-make for inhibiting conductive channel.High/low resistance state can be promoted, while reducing current limliting to reduce power consumption.Functional layer based on oxygen concentration gradient easily forms tapered conductive channel, and the high conductive channel vertex of a cone of oxygen content has the characteristic of easy break-make, it can be achieved that high speed resistive under low pressure operation.
Description
Technical field
The invention belongs to technical field of microelectronic devices, more particularly, to one kind based on metal oxide oxygen concentration ladder
The high-performance memory resistor of degree and its preparation, the memristor can utilize Jie of the oxygen concentration gradients such as TaOx, HfOx, AlOx, CuOx
Material is resistive functional layer, realizes the device function of memristor.
Background technology
Memristor can be divided into continuously adjustable resistance value gradual change according to its different performance characteristics and is mutated with resistance value.The former is in mould
It is proved to the application prospect for having great in terms of paraneuron cynapse, in terms of the latter can apply with data storage；Since its is non-easily
The property lost, low-power consumption and the other high switching characteristic of nanosecond can be used as substituting the next-generation memory of Flash, and in reality
There is very high potential in terms of now calculating storage fusion.
However at this stage, the memristor based on conductive filament theory has speed is fast, resistive window is big, operation voltage is low etc.
Advantage, commercial potential is very big, is the hot spot studied both at home and abroad.But since the break-make of conductive filament is difficult to control, localization is led
Electric pathway break-make has prodigious randomness, so it is discrete to cause ON/OFF voltage and high low resistance to be distributed, can be used for integrated
Crossbar structures increase since the problem of electrical crosstalk (crosstalk) be easy to cause to misread with power consumption caused by leakage current, lead to
It often needs to design complicated peripheral circuit, to improve accuracy of identification, not only to increase cost and circuit area is made to increase；
In order to improve stability, it is possible to increase it limits electric current and obtains lower resistance state to mA ranks, but also increases simultaneously
Power consumption, this makes device, and at integrated aspect, power consumption is larger is difficult to realize be commercialized；Furthermore according to the energy of memristor switching characteristic
Amount requires, i.e. voltage pulse width × voltage magnitude, and when pulsewidth drops to 100ns even 10ns, voltage magnitude is then significantly increased, it is difficult to
The low-power consumption for realizing chip is unfavorable for the fusion that is integrated and calculating storage of high-speed chip circuit.
Invention content
For the disadvantages described above or Improvement requirement of the prior art, the purpose of the present invention is to provide one kind to be aoxidized based on metal
The high-performance memory resistor of object oxygen concentration gradient and its preparation, wherein passing through the inside group to crucial functional layer in the memristor
At and its preparation method etc. be improved, the metal oxide changed in gradient using oxygen content as functional layer, lead by localization
The break-make of electrical filament is in elevated oxygen level area, it is suppressed that the stability, consistent of memory resistor can be improved in the randomness break-make of conductive channel
Property and switching speed.High/low resistance state can be promoted, while reducing current limliting to reduce power consumption.Work(based on oxygen concentration gradient
Ergosphere easily forms tapered conductive channel, and the high conductive channel vertex of a cone of oxygen content has the characteristic of easy break-make, it can be achieved that low pressure operates
Under high speed resistive.The break-make that memristor in the present invention passes through localization conductive filament so that resistance state further increases, and table
Reveal preferable stability, under the high speed test of 100ns and 50ns, shows the voltage less than 1V, and further
The operation voltage less than 3.3V is realized under the pulsewidth of 10ns.
To achieve the above object, according to one aspect of the present invention, it provides a kind of based on metal oxide oxygen concentration ladder
The memristor of degree, which is characterized in that the device cell of the memristor includes top electrode, functional layer and lower electrode, institute from top to bottom
It is metal oxide to state functional layer, and the oxygen content in the functional layer changes in gradient, is powered on along described in the lower electrode direction
Oxygen content in the functional layer of the direction of pole changes in increasing or decreasing.
As present invention further optimization, the metal oxide is the oxidation of the oxide of Ta, the oxide of Hf, Al
The oxide of object or Cu.
As present invention further optimization, the graded of oxygen content is consecutive variations in the functional layer.
It is described to power on extremely inert electrode as present invention further optimization, the inert electrode be preferably Pt, Pd or
Ir；The lower electrode is active electrode, which is preferably at least one of Ta, Hf, Al, Cu, Ti, Ag.
As present invention further optimization, the memristor includes multiple device cells, this multiple device cell corresponds to
Multiple top electrodes, and share the same functional layer and the same lower electrode；Any one of top electrode exists
It projects and is square in plane where lower electrode outer surface；
Preferably, the thickness of the lower electrode is 50nm-200nm, and the thickness of the functional layer is 10nm-100nm；Arbitrarily
The thickness of one top electrode is 50nm-500nm.
It is another aspect of this invention to provide that preparing recalling based on metal oxide oxygen concentration gradient the present invention provides a kind of
Hinder the method for device, which is characterized in that include the following steps：
(1) lower electrode is prepared on substrate；
(2) functional layer is prepared：
It is sputtered on the lower electrode using the method for sputtering and forms metal oxide, by gradually increasing in sputtering process
The content of oxygen obtains the metal oxide of oxygen content distribution gradient in the small sputtering local environment atmosphere that adds deduct, to obtain
Functional layer；
(3) top electrode is prepared in the functional layer, to finally obtain recalling based on metal oxide oxygen concentration gradient
Hinder device.
As present invention further optimization, in the step (2), before the sputtering starts, the lower electrode is also
It first passes through photoetching process and forms the photoresist layer of corresponding litho pattern on the surface of the lower electrode, to make the lower electrode described
The lower electrode section region for not exclusively being covered by the functional layer in sputtering process, and not covered by the functional layer is then for test
It uses；
It is the method stripping photolithography glue-line for first using acetone soak to add ultrasonic cleaning in addition, after the completion of the sputtering, then
It is cleaned successively with absolute ethyl alcohol and deionized water, the functional layer is obtained after being used in combination nitrogen gun to dry.
As present invention further optimization, in the step (3), before the preparation top electrode starts, the work(
Ergosphere also first passes through photoetching process and forms the photoresist layer of corresponding litho pattern on the surface of the functional layer, to make the functional layer
It is not exclusively covered by the top electrode during preparation top electrode；
It is that acetone soak is first used to add the method for ultrasonic cleaning to remove light in addition, after the completion of prepared by the top electrode
Photoresist layer, then cleaned successively with absolute ethyl alcohol and deionized water, the memristor is obtained after being used in combination nitrogen gun to dry；
Preferably, the photoresist layer be used to form where the substrate surface in plane projection be square power on
Pole；The top electrode is preferably several.
As present invention further optimization, in the step (2), the sputtering local environment atmosphere is O2With mixing for Ar
Close gas；Preferably, its air pressure of the sputtering local environment atmosphere maintains to fix；
The content of oxygen in sputtering local environment atmosphere is gradually increased in sputtering process preferably by O2With both Ar stream
What amount was successively increased than 0/40,2/60,3/60,3/45,6/60；
The content of oxygen in sputtering local environment atmosphere is gradually reduced in sputtering process preferably by O2With both Ar stream
What amount was sequentially reduced than 6/60,3/45,3/60,2/60,0/40.
As present invention further optimization, in the step (1), the substrate has SiO for the growth in single-sided polishing2
The Si substrates of insulating layer；
The step (1) is specifically to utilize the method for magnetically controlled DC sputtering to prepare the lower electrode over the substrate；
The step (3) is specifically to prepare the top electrode using the method for magnetically controlled DC sputtering.
Contemplated above technical scheme through the invention, compared with prior art, due to being become in gradient using oxygen content
The metal oxide of change is as functional layer, as (functional layer oxygen contains for functional layer that oxygen content is gradually increased from from lower electrode to top electrode
Amount can be gradual change, that is, consecutive variations), active electrode may be used as storage in the inert electrode that top electrode may be used, lower electrode
Oxygen pond (oxygen reservoir), obtained this oxygen concentration ladder of the memristor based on metal oxide oxygen concentration gradient film
The memristor of degree type can inhibit the random break-make of conductive channel, can Effective Regulation conductive nano access in elevated oxygen level area, can be real
Higher high Low ESR, the low-voltage high speed now stablized operate.Metal oxide in the present invention preferably chooses CMOS technology compatibility
Ta, Hf, Al, Cu etc. oxide as gradient function change resistance layer.The present invention can be used sputtering method and prepare functional layer, in work(
It is thin with the metal oxide for obtaining oxygen gradient type by adjusting the content of oxygen in working gas in the sputtering preparation process of ergosphere
Film, for example, the metal oxidation containing oxygen concentration gradient can be made by the ratio of different argon gas and oxygen in regulation and control sputtering process
Object functional layer；The present invention can be by gradually increasing working gas O in functional layer sputtering process2With O in the mixed gas of Ar2's
Content, the content that oxygen in the functional layer may be implemented are gradually increased from lower electrode to top electrode.
Functional layer in the present invention in memristor is the oxide of Ta, the oxide of Hf, the oxide of Al or the oxidation of Cu
The metal oxides such as object are changed, that is, the oxide of Ta in gradient by powering on the oxygen content under best in the electrode functional layer
X in the oxide CuOx of oxide AlOx, Cu of oxide HfOx, Al of TaOx, Hf changes in gradient, for example, in TaOx
X can the variation in 0~2.5, x in HfOx can the variation in 0~2, x in AlOx can the variation in 0~1.5,
X in CuOx can the variation in 0~2.
Sputtering may be used in the memristor functional layer of oxygen content distribution gradient in preparing metal oxide in the present invention
Technique, and oxygen content is finally obtained in ladder by gradually increasing the content of oxygen in sputtering local environment atmosphere in sputtering process
Spend the metal oxide functional layer of distribution.To sputter local environment atmosphere as O2For the mixed gas of Ar, in sputtering process
In can be by O2Oxygen in sputtering local environment atmosphere is successively increased with both Ar flow-rate ratios 0/40,2/60,3/60,3/45,6/60
Content, can obtain oxygen content be in depth-graded variation functional layer.It is of course also possible to which adjustment sputters institute according to actual needs
The composition variation for locating ambiance, is made functional layer of the oxygen content in mutation graded.
In the aspect of performance of memristor, under less than 100uA lower limit electric currents, the memristor low resistance of gradient type of the present invention
It is increased to 104Ω or more, and realize further increasing for high resistant can prevent to reduce leakage current between resistive element
Electrical crosstalk, it is suppressed that the discreteness of set voltages and reset voltages；The functional layer based on oxygen content concentration gradient is more easy to simultaneously
Multistage resistive is realized under being manipulated in electric field；Under the high-speed pulse test of 100ns and 50ns, such memristor shows low
In the operation voltage of 1V, and further realize under the pulsewidth of 10ns the operation voltage less than 3.3V；The resistive functional layer
Comprehensive performance for the memristor unit of oxygen gradient is significantly better than existing memory resistor.Present invention can apply to high speed, low work(
The chip design of consumption operation, high density data storage, neuromorphic, which are simulated and calculated, all has important directive significance.
As it can be seen that being based on metal oxide oxygen gradient type film memristor in the present invention, can be applied to substitute the next of Flash
For memory technology；Capacity is big needed for data storage, and requires the retention time longer, has non-volatile, and such memristor can
It realizes stable two-value resistive, storage numerical value " 1 " and " 0 " (i.e. logical truth and logical falsehood) can be respectively intended to, and compared to traditional
Flash speed is faster.Also, the memristor can be applied in the design of low voltage logic circuit, and logical calculated requirement is high to be calculated
Speed and low power consumption, such memristor is due to apparent burnt during the effect of oxygen concentration gradient during set and reset
The break-make that your fuel factor makes to obtain conductive filament can be realized under existing fringing field effect, so as to realize high speed operation and operation
Voltage is low, and the raising of resistance state reduces leakage current and makes lower power consumption.
Description of the drawings
Fig. 1 is the structural schematic diagram of metal oxide oxygen concentration gradient memristor unit of the present invention.
(a) is the HRTEM figures of initial film in Fig. 2, is (b) that the EDS lines of corresponding O elements sweep schematic diagram.
Fig. 3 is 100 I/V direct current characteristic scanning figures of memristor under 100uA current limlitings.
Fig. 4 is the high-speed pulse test under 100ns.
Fig. 5 is the high-speed pulse test under 50ns.
Fig. 6 is the high-speed pulse test under 10ns.
Fig. 7 is the multivalue modulation under different current limlitings.
Fig. 8 is the multivalue modulation under difference reset voltage magnitudes under 80ns.
Fig. 9 is 100 I/V direct current characteristic scanning figures of memristor of even oxide film in comparative example 1.
The meaning of each reference numeral is as follows in Fig. 1：1 is top electrode, and 2 be functional layer, and 3 be lower electrode, and 4 is in substrates
SiO2Layer, 5 be the monocrystalline silicon layer in substrate.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
It does not constitute a conflict with each other and can be combined with each other.
The high-performance memory resistor based on metal oxide oxygen concentration gradient can be recalling for three layers of pad structures in the present invention
Device unit is hindered, structural schematic diagram is as shown in Figure 1, include mainly top electrode, functional layer and lower electrode, function stratification from top to bottom
Sandwich structure can be formed between top electrode and lower electrode.
Preparation method in short, can be specifically by sputtering prepare lower electrode, on the bottom electrode by photoetching,
Functional layer is prepared in sputtering, stripping, top electrode is prepared by photoetching, sputtering, stripping on a functional, to form three-layered node
The memristor device of structure；Wherein, it when sputtering prepares functional layer, needs by adjusting Ar and O in sputtering process2Ratio come
Realize oxygen concentration gradient functional layer.Such as, it may include following steps：
(1) lower electrode is prepared；
By the method for magnetron sputtering, there is SiO in single-sided polishing growth2Monocrystalline substrate on growth one layer of metal under electricity
Pole, obtained lower electrode film can cover entire substrate surface, and overall thickness can be 50nm-200nm；
(2) functional layer is prepared；
Photoetching process can be first passed through and first prepare litho pattern on the surface of lower electrode, sputtering technology is recycled to prepare gold
Belong to oxide functional layer；For example, photoresist can be covered to a part for lower electrode edge to expose lower electrode for rear
Continuous test；
(2.1) photoetching：By preparing litho pattern on electrode under photoetching process so that lower electrode exposes one after stripping
Point, wherein the step of photoetching, includes spin coating, front baking, preceding exposure, rear baking, exposes, develops afterwards；
(2.2) it sputters：Adjust Ar and O in sputtering working gas2Ratio (Ar can also be replaced with other inert gases),
Functional layer is sputtered on the figure being lithographically derived；
In sputtering process, the content of oxygen in working gas is gradually increased to realize the content of oxygen in the functional layer under
Electrode to top electrode gradually increases, and overall thickness is positively retained at 10nm-100nm；
(2.3) it removes：Using the film sample prepared by acetone soak step (2.2), assisted therebetween to be cleaned by ultrasonic,
It is cleaned with absolute ethyl alcohol and deionized water, is finally dried with nitrogen gun successively again；
(3) top electrode is prepared；
(3.1) photoetching：The photoetching figure of square is prepared on the obtained functional layer sample of step (2) by photoetching process
Shape, lithography step is the same as (2.1)；
(3.2) it sputters：Top electrode is grown on the litho pattern of square by the method for magnetron sputtering, sputtering pressure can
Think that 0.5Pa, dc power can be 35W, overall thickness 50nm-500nm；
(3.3) it removes：Using the film sample prepared by acetone soak step (3.2), assisted therebetween to be cleaned by ultrasonic,
It is cleaned with absolute ethyl alcohol and deionized water, is finally dried with nitrogen gun successively again；
It can be obtained the memristor unit of three-decker by process above step.In memristor, lower electrode can cover
Entire substrate surface, it is entire one layer that functional layer area, which is less than lower electrode but can equally connect, and top electrode can be single
A square structure.
And step in detail below may be used to the test method of above-mentioned prepared device cell：
(a) initialization operation is carried out first to initial unit, by its lower electrode ground connection, top electrode applies negative voltage,
The purpose is to be initially formed the conductive path of connection upper/lower electrode, so as to the progress of follow-up resistive process；
(b) multiple bidirectional, dc I/V voltage scannings are applied to the unit after initialization in step (a), until the cell list
Reveal stable resistive characteristic and its low-resistance is worth to certain raising；
(c) it carries out the switching characteristic under pulse to the memristor to test, is with obtained low resistance state in step (b) first
The size of benchmark, the pulsewidth and amplitude that adjust pulse obtains the high value of 10 times or so of resistive window；Again with this high value
On the basis of, the size of the pulsewidth and amplitude that adjust pulse makes device resistive return original low resistance；
(d) it under DC I-V scan pattern, adjusts different current limlitings and is worth to different multivalue resistance states；
(e) under certain nanosecond pulse width, reset voltage magnitudes is adjusted, different intermediate resistance states is adjusted, obtains multivalue,
To realize multilevel storage characteristic；
It is specific embodiment below：
Embodiment 1
By taking tantalum base memory resistor as an example, corresponding preparation method may comprise steps of：
(1) lower electrode is prepared；
It selects Ta as lower electrode in experiment, by the method for magnetron sputtering, has SiO in single-sided polishing growth2Monocrystalline
One layer of lower electrode is grown on silicon substrate.
(1.1) substrate cleans：It is first cleaned under ultrasound environments 10 minutes using acetone, uses alcohol in ultrasound environments again later
Lower cleaning 10 minutes, is finally cleaned by ultrasonic 10 minutes with deionized water, ultrasonic power 60W；
(1.2) it sputters：Under the sputtering power of 100W, the Ar atmosphere of 0.5Pa encloses middle sputtering 370s growths 100nm's
Ta hearth electrodes；
(2) functional layer is prepared；
Functional layer uses TaOx materials, sputters the content of oxygen in working gas by control to obtain oxygen concentration gradient
TaOx materials；
(2.1) photoetching：By preparing litho pattern on electrode under photoetching process so that lower electrode exposes one after stripping
Point, wherein the step of photoetching, includes spin coating, front baking, preceding exposure, rear baking, exposes, develops afterwards；
(2.2) it sputters：Adjust Ar and O in sputtering working gas2Ratio, sputter function on the figure being lithographically derived
Layer；
The content of oxygen is gradually increased in sputtering working gas environment to realize the content of oxygen in the functional layer from lower electricity
Best top electrode gradually increases, O in experiment2With the flow proportional of Ar can by such as 0/40,2/60,3/60,3/45,6/60 according to
Secondary increase (Ar and O2Total sputtering pressure can remain certain, flux unit can be sccm), using TaOx targets sputter (TaOx
1.5) x in target can be that overall thickness is maintained at 15nm, that is, the thickness of each work atmosphere sputtering is 3nm, by not
With the diffusion at interface between component to form the concentration gradient of gradual change, as shown in Figure 2；From (b) in Fig. 2 as it can be seen that by the positions a to
Between the positions b, O constituent contents in incremental variations (wherein have unexpected decline in the O constituent contents near the positions b,
This decline is caused by being shaken due to test, and it is still incremental variations that oxygen content is practical in functional layer)；
The process conditions of sputtering are：Sputtering pressure is 0.5pa, power 120W；
(2.3) it removes：Using the film sample prepared by acetone soak step (2.2), assisted therebetween to be cleaned by ultrasonic,
It is cleaned with absolute ethyl alcohol and deionized water, is finally dried with nitrogen gun successively again；
(3) top electrode is prepared；
(3.1) photoetching：The photoetching figure of square is prepared on the obtained functional layer sample of step (2) by photoetching process
Shape, lithography step is the same as (2.1)；
(3.2) it sputters：Experiment uses Pt metal target, and under the sputtering power of 35W, the Ar atmosphere of 0.5Pa encloses middle sputtering
700s grows the top electrode of 100nm；
(3.3) it removes：Using the film sample prepared by acetone soak step (3.2), assisted therebetween to be cleaned by ultrasonic,
It is cleaned with absolute ethyl alcohol and deionized water, is finally dried with nitrogen gun successively again；Obtain final memristor sample.
Above-described embodiment can be used following methods and be tested：
(a) initialization operation is carried out first to initial unit, by its lower electrode ground connection, top electrode applies 0V~-7V's
Negative voltage, limitation electric current is set as 10uA, the purpose is to be initially formed the conductive path of connection upper/lower electrode, so as to follow-up resistive mistake
The progress of journey；
(b) multiple bidirectional, dc I/V voltage scannings, voltage scan range are applied to the unit after initialization in step (a)
For -2~2.2V, limitation electric current is set as 100uA, obtains the low resistance of 10k Ω.Until the unit shows stable resistive spy
Property；
(c) it carries out the switching characteristic under pulse to the memristor to test, is with obtained low resistance state in step (b) first
Benchmark, adjusting pulsewidth are respectively 100ns, 50ns, 10ns, then adjust respectively corresponding reset voltage magnitudes to 0.96V,
0.98V, 3.2V so that unit reset to 100k Ω or so, adjust respectively corresponding set voltage magnitudes to -0.64V, -
0.67V, -2.3V so that unit set to 10k Ω or so；
(d) cut-off current 30uA-200uA is adjusted, scanning voltage range is fixed on -2V-2.2V, measures more under different current limlitings
It is worth resistance state, as shown in Figure 7；
(e) adjusting pulsewidth is 80ns, and set voltages to -0.57V, fixed low-resistance is in 2k Ω or so, adjusting reset voltage amplitudes
Value respectively 0.7,0.8,0.85,0.94V, respectively obtain a variety of resistance states of 5k Ω, 10k Ω, 20k Ω, 50k Ω, such as Fig. 8 institutes
Show.
Show that memristor low resistance under the current limliting of 100uA has been increased to 10 by above-mentioned test result4Ω or more, and
Good stability is shown, leakage current is further suppressed under high-impedance state, and resistance state improves；High-speed pulse test shows to pass through essence
Stable low resistance and certain window can be obtained with the control accurate of amplitude matched to realize conductive filament by really adjusting voltage
Value, the impulse modulation of nanosecond realize the high speed operation of device, obtained under the pulsewidth of 100ns and 50ns less than 1V's
Amplitude under amplitude and 10ns less than 3.3V realizes low operating voltage；Oxygen content can actually be passed through by being successfully authenticated the present invention
Graded regulation and control localization conductive filament break-make in the high region of oxygen content, realize under lower bound stream, obtain it is stable compared with
High resistance state to reduce leakage current, and realizes the low-power consumption memristor characteristic operation under high-speed pulse operation.
Comparative example 1
By taking tantalum base memory resistor as an example, corresponding preparation method may comprise steps of：
(1) lower electrode is prepared；
It selects Ta as lower electrode in experiment, by the method for magnetron sputtering, has SiO in single-sided polishing growth2Monocrystalline
One layer of lower electrode is grown on silicon substrate.
(1.1) substrate cleans：It is first cleaned under ultrasound environments 10 minutes using acetone, uses alcohol in ultrasound environments again later
Lower cleaning 10 minutes, is finally cleaned by ultrasonic 10 minutes with deionized water, ultrasonic power 60W；
(1.2) it sputters：Under the sputtering power of 100W, the Ar atmosphere of 0.5Pa encloses middle sputtering 370s growths 100nm's
Ta hearth electrodes；
(2) functional layer is prepared；
Functional layer uses TaOx materials, sputters the content of oxygen in working gas by control to obtain oxygen concentration gradient
TaOx materials；
(2.1) photoetching：By preparing litho pattern on electrode under photoetching process so that lower electrode exposes one after stripping
Point, wherein the step of photoetching, includes spin coating, front baking, preceding exposure, rear baking, exposes, develops afterwards；
(2.2) it sputters：It is sputtered under pure Ar atmosphere, functional layer is sputtered on the figure being lithographically derived；
The total sputtering pressure of sputtering process can remain certain, and TaOx targets is used to sputter (x in TaOx targets can be 1.5),
Overall thickness is maintained at 15nm；
The process conditions of sputtering are：Sputtering pressure is 0.5pa, power 120W；
(2.3) it removes：Using the film sample prepared by acetone soak step (2.2), assisted therebetween to be cleaned by ultrasonic,
It is cleaned with absolute ethyl alcohol and deionized water, is finally dried with nitrogen gun successively again；
(3) top electrode is prepared；
(3.1) photoetching：The photoetching figure of square is prepared on the obtained functional layer sample of step (2) by photoetching process
Shape, lithography step is the same as (2.1)；
(3.2) it sputters：Experiment uses Pt metal target, and under the sputtering power of 35W, the Ar atmosphere of 0.5Pa encloses middle sputtering
700s grows the top electrode of 100nm；
(3.3) it removes：Using the film sample prepared by acetone soak step (3.2), assisted therebetween to be cleaned by ultrasonic,
It is cleaned with absolute ethyl alcohol and deionized water, is finally dried with nitrogen gun successively again；Obtain final memristor sample.
Above-mentioned comparative example 1 can be used following methods and be tested：
(a) initialization operation is carried out first to initial unit, by its lower electrode ground connection, top electrode applies 0V~-7V's
Negative voltage, limitation electric current is set as 10uA, the purpose is to be initially formed the conductive path of connection upper/lower electrode, so as to follow-up resistive mistake
The progress of journey；
(b) multiple bidirectional, dc I/V voltage scannings, voltage scan range are applied to the unit after initialization in step (a)
For -2~2.2V, limitation electric current is set as 100uA, and test results are shown in figure 9；
In the embodiment of the present invention and comparative example, it is all made of Agilent B1500 and memristor unit is carried out under direct current
I/V is scanned and the high-speed switch characteristic test under pulse.
Other than above-mentioned tantalum base memory resistor, according to actual demand, it can also be prepared based on the preparation method in the present invention
Go out hafnium base, aluminium base and copper-based memory resistor, such as only needs tantalum-based materials (such as functional layer that will occur in above-mentioned preparation method
Used TaOx materials) it is substituted for corresponding hafnium sill, alumina-base material or copper-based material, gas in functional layer sputtering process
The mapping mode of atmosphere can remain unchanged (certainly, since lower electrode and the metal material of functional layer can be different, in embodiment 1
Ta simple substance can both be adjusted flexibly used by lower electrode, can also remain unchanged).
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, all within the spirits and principles of the present invention made by all any modification, equivalent and improvement etc., should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of memristor based on metal oxide oxygen concentration gradient, which is characterized in that the device cell of the memristor is from upper
And lower includes top electrode, functional layer and lower electrode, the functional layer is metal oxide, and the oxygen content in the functional layer is in gradient
Variation changes along the oxygen content in the functional layer of the direction of the top electrode is directed toward by the lower electrode in increasing or decreasing.
2. the memristor as described in claim 1 based on metal oxide oxygen concentration gradient, which is characterized in that the metal oxidation
Object is the oxide of Ta, the oxide of Hf, the oxide of Al or the oxide of Cu.
3. the memristor as described in claim 1 based on metal oxide oxygen concentration gradient, which is characterized in that in the functional layer
The graded of oxygen content is consecutive variations.
4. the memristor as described in claim 1 based on metal oxide oxygen concentration gradient, which is characterized in that described to power on extremely
Inert electrode, the inert electrode are preferably Pt, Pd or Ir；The lower electrode be active electrode, the active electrode be preferably Ta,
At least one of Hf, Al, Cu, Ti, Ag.
5. the memristor as described in claim 1 based on metal oxide oxygen concentration gradient, which is characterized in that the memristor packet
Multiple device cells are included, this multiple device cell corresponds to multiple top electrodes, and shares the same functional layer and same
A lower electrode；Any one of top electrode where lower electrode outer surface in plane projection be square；
Preferably, the thickness of the lower electrode is 50nm-200nm, and the thickness of the functional layer is 10nm-100nm；Any one
The thickness of the top electrode is 50nm-500nm.
6. a kind of method preparing the memristor based on metal oxide oxygen concentration gradient, which is characterized in that include the following steps：
(1) lower electrode is prepared on substrate；
(2) functional layer is prepared：
Sputtered on the lower electrode using the method for sputtering and form metal oxide, by being gradually increased in sputtering process or
The content for reducing oxygen in sputtering local environment atmosphere obtains the metal oxide of oxygen content distribution gradient, to obtain function
Layer；
(3) top electrode is prepared in the functional layer, to finally obtain the memristor based on metal oxide oxygen concentration gradient.
7. preparation method as claimed in claim 6, which is characterized in that in the step (2), before the sputtering starts, institute
It states lower electrode and also first passes through photoetching process and form the photoresist layer of corresponding litho pattern on the surface of the lower electrode, to make under this
The lower electrode portion subregion that electrode is not exclusively covered by the functional layer in the sputtering process, and do not covered by the functional layer
Domain is then used for test；
It is the method stripping photolithography glue-line for first using acetone soak to add ultrasonic cleaning, then successively in addition, after the completion of the sputtering
It is cleaned with absolute ethyl alcohol and deionized water, the functional layer is obtained after being used in combination nitrogen gun to dry.
8. preparation method as claimed in claim 6, which is characterized in that in the step (3), start in the preparation top electrode
Before, the functional layer also first passes through photoetching process and forms the photoresist layer of corresponding litho pattern on the surface of the functional layer, to
The functional layer is set not exclusively to be covered by the top electrode during preparation top electrode；
It is that acetone soak is first used to add the method for ultrasonic cleaning with stripping photoresist in addition, after the completion of prepared by the top electrode
Layer, then cleaned successively with absolute ethyl alcohol and deionized water, the memristor is obtained after being used in combination nitrogen gun to dry；
Preferably, the photoresist layer, which is used to form, is projecting the top electrode being square in plane where the substrate surface；
The top electrode is preferably several.
9. preparation method as claimed in claim 6, which is characterized in that in the step (2), the sputtering local environment atmosphere is
O2With the mixed gas of Ar；Preferably, its air pressure of the sputtering local environment atmosphere maintains to fix；
The content of oxygen in sputtering local environment atmosphere is gradually increased in sputtering process preferably by O2With both Ar flow-rate ratio 0/
40, it 2/60,3/60,3/45,6/60 successively increases；
The content of oxygen in sputtering local environment atmosphere is gradually reduced in sputtering process preferably by O2With both Ar flow-rate ratio 6/
60, it 3/45,3/60,2/60,0/40 is sequentially reduced.
10. preparation method as claimed in claim 6, which is characterized in that in the step (1), the substrate is in single-sided polishing
Growth have SiO2The Si substrates of insulating layer；
The step (1) is specifically to utilize the method for magnetically controlled DC sputtering to prepare the lower electrode over the substrate；
The step (3) is specifically to prepare the top electrode using the method for magnetically controlled DC sputtering.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810662587.0A CN108807668B (en) | 2018-06-25 | 2018-06-25 | High-performance memristor based on metal oxide oxygen concentration gradient and preparation thereof |
| PCT/CN2019/091747 WO2020001328A1 (en) | 2018-06-25 | 2019-06-18 | High performance memristor device based on oxygen concentration gradient of metal oxide, and preparation thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810662587.0A CN108807668B (en) | 2018-06-25 | 2018-06-25 | High-performance memristor based on metal oxide oxygen concentration gradient and preparation thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108807668A true CN108807668A (en) | 2018-11-13 |
| CN108807668B CN108807668B (en) | 2020-07-10 |
Family
ID=64071215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810662587.0A Active CN108807668B (en) | 2018-06-25 | 2018-06-25 | High-performance memristor based on metal oxide oxygen concentration gradient and preparation thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108807668B (en) |
| WO (1) | WO2020001328A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020001328A1 (en) * | 2018-06-25 | 2020-01-02 | 华中科技大学 | High performance memristor device based on oxygen concentration gradient of metal oxide, and preparation thereof |
| CN110911559A (en) * | 2019-11-08 | 2020-03-24 | 华中科技大学 | Analog HfOx/HfOyHomogeneous junction memristor and regulation and control method thereof |
| CN111341909A (en) * | 2020-02-07 | 2020-06-26 | 中国科学院微电子研究所 | Memory device and manufacturing method thereof, memory and electronic equipment |
| CN112289930A (en) * | 2020-10-29 | 2021-01-29 | 华中科技大学 | Cu with volatility and non-volatilityxO memristor and regulation and control method thereof |
| CN112467027A (en) * | 2020-11-04 | 2021-03-09 | 华中科技大学 | Memristor based on interface doping and preparation method thereof |
| CN112909165A (en) * | 2021-01-22 | 2021-06-04 | 江苏集萃脑机融合智能技术研究所有限公司 | Preparation method of gradient metal oxide memristor |
| CN113346016A (en) * | 2021-05-20 | 2021-09-03 | 华中科技大学 | Memristor and preparation method thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112701220B (en) * | 2020-10-23 | 2024-02-06 | 大连理工大学 | HfO with metal Hf buffer layer 2 Base memristor and manufacturing method thereof |
| CN113054103B (en) * | 2021-03-16 | 2024-01-23 | 江苏集萃脑机融合智能技术研究所有限公司 | Method for quickly searching optimal alloy oxide memristive material |
| CN114188478A (en) * | 2021-12-07 | 2022-03-15 | 厦门大学 | Biodegradable memristor array with information storage function and preparation method |
| CN116615091A (en) * | 2023-05-25 | 2023-08-18 | 清华大学 | Tungsten oxide multi-resistance state regulation and control method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621114A (en) * | 2009-07-21 | 2010-01-06 | 中国科学院上海硅酸盐研究所 | Oxide multilayered gradient film and RRAM component structured thereby |
| CN102782847A (en) * | 2010-03-26 | 2012-11-14 | 株式会社东芝 | Resistance change device and memory cell array |
| CN104067391A (en) * | 2012-01-20 | 2014-09-24 | 美光科技公司 | Memory cells and methods of forming memory cells |
| CN105552219A (en) * | 2015-12-10 | 2016-05-04 | 上海交通大学 | RRAM memory cell structure with self-rectification characteristic and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8134865B2 (en) * | 2008-05-06 | 2012-03-13 | Macronix International Co., Ltd. | Operating method of electrical pulse voltage for RRAM application |
| CN101989644A (en) * | 2009-07-31 | 2011-03-23 | 复旦大学 | Method for improving data retention capacity of resistor random memory |
| CN103606625B (en) * | 2013-11-28 | 2016-04-06 | 北京大学 | High consistency low-power consumption resistance-variable storing device and preparation method |
| CN107293642A (en) * | 2017-06-07 | 2017-10-24 | 华中科技大学 | One kind is based on HfO2‑xTwo-value and multivalue memristor, preparation method and applications |
| CN108807668B (en) * | 2018-06-25 | 2020-07-10 | 华中科技大学 | High-performance memristor based on metal oxide oxygen concentration gradient and preparation thereof |
-
2018
- 2018-06-25 CN CN201810662587.0A patent/CN108807668B/en active Active
-
2019
- 2019-06-18 WO PCT/CN2019/091747 patent/WO2020001328A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621114A (en) * | 2009-07-21 | 2010-01-06 | 中国科学院上海硅酸盐研究所 | Oxide multilayered gradient film and RRAM component structured thereby |
| CN102782847A (en) * | 2010-03-26 | 2012-11-14 | 株式会社东芝 | Resistance change device and memory cell array |
| CN104067391A (en) * | 2012-01-20 | 2014-09-24 | 美光科技公司 | Memory cells and methods of forming memory cells |
| CN105552219A (en) * | 2015-12-10 | 2016-05-04 | 上海交通大学 | RRAM memory cell structure with self-rectification characteristic and preparation method thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020001328A1 (en) * | 2018-06-25 | 2020-01-02 | 华中科技大学 | High performance memristor device based on oxygen concentration gradient of metal oxide, and preparation thereof |
| CN110911559A (en) * | 2019-11-08 | 2020-03-24 | 华中科技大学 | Analog HfOx/HfOyHomogeneous junction memristor and regulation and control method thereof |
| CN110911559B (en) * | 2019-11-08 | 2021-10-15 | 华中科技大学 | Analog HfOx/HfOyHomogeneous junction memristor and regulation and control method thereof |
| CN111341909A (en) * | 2020-02-07 | 2020-06-26 | 中国科学院微电子研究所 | Memory device and manufacturing method thereof, memory and electronic equipment |
| CN112289930A (en) * | 2020-10-29 | 2021-01-29 | 华中科技大学 | Cu with volatility and non-volatilityxO memristor and regulation and control method thereof |
| CN112289930B (en) * | 2020-10-29 | 2022-08-05 | 华中科技大学 | CuxO memristor with volatility and non-volatility and regulation and control method thereof |
| CN112467027A (en) * | 2020-11-04 | 2021-03-09 | 华中科技大学 | Memristor based on interface doping and preparation method thereof |
| CN112467027B (en) * | 2020-11-04 | 2023-05-30 | 华中科技大学 | Memristor based on interface doping and preparation method thereof |
| CN112909165A (en) * | 2021-01-22 | 2021-06-04 | 江苏集萃脑机融合智能技术研究所有限公司 | Preparation method of gradient metal oxide memristor |
| CN113346016A (en) * | 2021-05-20 | 2021-09-03 | 华中科技大学 | Memristor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108807668B (en) | 2020-07-10 |
| WO2020001328A1 (en) | 2020-01-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108807668A (en) | Based on the high-performance memory resistor of metal oxide oxygen concentration gradient and its preparation | |
| Gao et al. | Forming-free and self-rectifying resistive switching of the simple Pt/TaO x/n-Si structure for access device-free high-density memory application | |
| KR100962221B1 (en) | Switching device | |
| Wang et al. | Multilevel resistive switching in Ti/CuxO/Pt memory devices | |
| Xu et al. | Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention | |
| Chang et al. | Oxide double‐layer nanocrossbar for ultrahigh‐density bipolar resistive memory | |
| Xu et al. | Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films | |
| EP1507297B1 (en) | Method for obtaining reversible resistance switches in a PCMO thin film deposited on a highly crystallized seed layer | |
| JP2005340786A (en) | Formation method of pcmo thin film having memory resistance property and pcmo device | |
| CN108831992A (en) | A kind of resistance-variable storing device and preparation method thereof of hafnium doping zinc-oxide change resistance layer | |
| JP2008028228A (en) | Variable resistance element and resistance random access memory | |
| CN109638153A (en) | A kind of gating tube material, gating tube device and preparation method thereof | |
| CN110911559B (en) | Analog HfOx/HfOyHomogeneous junction memristor and regulation and control method thereof | |
| RU2468471C1 (en) | Method of obtainment of nonvolatile storage element | |
| CN101452891A (en) | Method for manufacturing resistance variant memory crossover array | |
| CN108231823A (en) | A kind of niobium oxide gating device and its manufacturing method based on zirconium oxide tunnel layer | |
| Lee et al. | Unipolar Resistive Switching Characteristics of a $\hbox {ZrO} _ {2} $ Memory Device With Oxygen Ion Conductor Buffer Layer | |
| Wu et al. | Analyzing electric field effect by applying an ultra-short time pulse condition in hafnium oxide-based RRAM | |
| Zhou et al. | Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement | |
| CN102214674B (en) | RRAM (resistive random access memory) with self-rectifying effect based on SOI (silicon on insulator) materials | |
| CN105552219B (en) | RRAM memory cell structure and preparation method thereof with self-rectifying characteristic | |
| CN110416404A (en) | A kind of ultrafast resistance-variable storing device and its resistance state control method | |
| Marinella et al. | Resistive switching in aluminum nitride | |
| CN208127213U (en) | A kind of niobium oxide gating device based on zirconium oxide tunnel layer | |
| CN113113538B (en) | Anti-crosstalk resistive random access device based on aluminum-doped niobium oxide and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |