CN108231823A - A kind of niobium oxide gating device and its manufacturing method based on zirconium oxide tunnel layer - Google Patents
A kind of niobium oxide gating device and its manufacturing method based on zirconium oxide tunnel layer Download PDFInfo
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910001928 zirconium oxide Inorganic materials 0.000 title claims abstract description 71
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229910000484 niobium oxide Inorganic materials 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 72
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims description 44
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 44
- 239000010408 film Substances 0.000 claims description 23
- 239000010955 niobium Substances 0.000 claims description 22
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 229910052697 platinum Inorganic materials 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 16
- 238000004062 sedimentation Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 14
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 13
- 229910052726 zirconium Inorganic materials 0.000 claims description 13
- 229910052758 niobium Inorganic materials 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000011161 development Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 9
- 238000003860 storage Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000011533 mixed conductor Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VEMKTZHHVJILDY-UHFFFAOYSA-N resmethrin Chemical compound CC1(C)C(C=C(C)C)C1C(=O)OCC1=COC(CC=2C=CC=CC=2)=C1 VEMKTZHHVJILDY-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The present invention relates to a kind of niobium oxide gating devices and its manufacturing method based on zirconium oxide tunnel layer.The gating device of the present invention includes bottom electrode layer, zirconium oxide tunnel layer, niobium oxide conversion layer and top electrode layer successively from bottom to up；The thickness of the bottom electrode layer is 50~300nm, the thickness of the tunnel layer is 1~5nm, the thickness of the conversion layer is 30~100nm, and the thickness of the top electrode layer is 50~300nm, and the tunnel layer, conversion layer and top electrode layer are formed using the method for magnetron sputtering.The present invention increases one layer of ultra-thin zirconium oxide tunnel layer between niobium oxide conversion layer and bottom electrode layer, zirconium oxide tunnel layer effectively reduces the operation electric current of device and operation voltage, the use power consumption of device can be significantly reduced, increase high-resistance resistors value, promote nonlinearity, therefore, gating device non-linear value produced by the present invention is high, very with development potentiality and application value.
Description
Technical field
The present invention relates to information storage technology, it is more particularly related to a kind of oxygen based on zirconium oxide tunnel layer
Change niobium gating device and its manufacturing method.
Background technology
Conventional multi-crystalline silicon flash memory technology face behind lasting micro to below 20nm technology nodes a series of technology restrictions and
Theoretical limit has been difficult to the memory requirement for meeting ultra high density, therefore the novel memory technology of exploitation has become next-generation high density
The active demand of memory device.Resistance-variable storing device (RRAM) is small with unit size, and device architecture is simple, and service speed is fast, work(
Consume low, micro is good, the advantages that being easily integrated, it has also become the contenders of next-generation non-volatile memory technology have wide
Application prospect.But there are apparent cross-interference issues in integrating process by RRAM, so as to which storage information be caused to misread, cause
Information lacks.Based on this, selector becomes the inevitable choice that RRAM is integrated.Selector includes silicon substrate gate tube, oxide
Potential barrier gate tube, threshold switch gate tube, hybrid ionic-electronic conductor gate tube and field help non-linear gate tube etc..Wherein select
Siphunculus (seletor) can be regarded as a kind of nonlinear resistance, and resistance value gap at low voltages and high voltages is very big, often
Often there is the difference of several orders of magnitude, can be widely applied to the 3D storage integrated architectures including phase change memory, composition 1S1R knots
Structure.1S1R structures refer to one resistance-variable storing device of series connection and a two-way gating tube device to collectively form a storage unit,
It also is able to keep the device size identical with single resistive device while crossfire is inhibited, can realize right-angled intersection battle array
The High Density Integration of row.
However, the selective power of gate tube directly determines the integration density of memory.At present, the non-linear ratio of gate tube
It is relatively low, it is impossible to meet the integrated demand of ultra-large storage, therefore improve the non-linear than as the primary of research of gating device
Target.
Invention content
For it is pointed in background technology the problem of, the purpose of the present invention is to provide a kind of based on zirconium oxide tunnel layer
Niobium oxide gating device and its manufacturing method, gating device of the invention increase between niobium oxide and hearth electrode one layer it is ultra-thin
Zirconium oxide tunnel layer improves the non-linear of gating device.
In order to realize above-mentioned first purpose of the present invention, inventor passes through a large amount of experimental study, has developed one kind
Niobium oxide gating device based on zirconium oxide tunnel layer, the gating device from bottom to up successively include bottom electrode layer, tunnel layer,
Conversion layer and top electrode layer, wherein：The bottom electrode layer is any one of for FTO, ITO, ZTO or TiN material, the tunnel layer
For zirconia film material, the conversion layer is columbium oxide film material, and the top electrode layer is Pt thin-film materials, the oxygen
Change niobium is NbOx。
Further, the niobium oxide described in above-mentioned technical proposal is niobium pentaoxide.
Further, the thickness of bottom electrode layer described in above-mentioned technical proposal be 50~300nm, the thickness of the tunnel layer
For 1~5nm, the thickness of the conversion layer is 30~100nm, and the thickness of the top electrode layer is 50~300nm.
Further, the shape of bottom electrode layer described in above-mentioned technical proposal, tunnel layer, conversion layer and top electrode layer is square
Shape or square, the length of side are 100nm~100 μm.
Further, the shape of bottom electrode layer described in above-mentioned technical proposal, tunnel layer, conversion layer and top electrode layer is just
Rectangular, the length of side is 0.4 μm~4 μm.
Another object of the present invention is to provide the system of the niobium oxide gating device described above based on zirconium oxide tunnel layer
Preparation Method, the method comprises the following steps：
(1) the film carrier substrate surface for carrying hearth electrode is pre-processed；
(2) zirconia film tunnel layer is sequentially depositing on hearth electrode surface using magnetron sputtering technique, columbium oxide film turns
Layer and metal platinum top electrode layer are changed, the niobium oxide gating device of the present invention based on zirconium oxide tunnel layer is made.
Further, the specific preparation of the tunnel layer described in above-mentioned technical proposal step (2), conversion layer and top electrode layer
Technique is as follows：
(a) ceramic zirconium oxide target, ceramic niobium pentaoxide target and metal platinum target are installed respectively on magnetron sputtering apparatus, with
Argon gas is passed through for inert gas in the vacuum chamber of magnetron sputtering apparatus；
(b) tunnel layer is prepared：Magnetron sputtering power supply is opened, the control indoor system pressure of vacuum is 4Torr, temperature is
300K, in power under the conditions of 100~140W, in bottom electrode layer surface deposited oxide zirconium tunnel layer, sedimentation time for 20~
80s after deposition, closes magnetron sputtering power supply；
(c) conversion layer is prepared：Magnetron sputtering power supply is opened, the control indoor system pressure of vacuum is 4Torr, temperature is
300K under the conditions of power is 100~140W, in step (b) the zirconium oxide tunnelling layer surface deposited oxide niobium conversion layer, sinks
The time is accumulated as 600~2000s, after deposition, closes magnetron sputtering power supply；
(d) top electrode layer is prepared：Magnetron sputtering power supply is opened, the control indoor system pressure of vacuum is 4Torr, temperature is
300K, under conditions of power is 80~120W, in step (c) the niobium oxide conversion layer surface deposited metal platinum top electrode
Layer, sedimentation time is 200~1200s, after deposition, closes magnetron sputtering power supply, is cooled to room temperature, obtains institute of the present invention
The niobium oxide gating device based on zirconium oxide tunnel layer stated.
Further, the magnetron sputtering used in above-mentioned technical proposal step (b), step (c) is rf magnetron sputtering, step
Suddenly the magnetron sputtering used in (d) is magnetically controlled DC sputtering.
Further, the thickness of bottom electrode layer described in above-mentioned technical proposal be 50~300nm, the thickness of the tunnel layer
For 1~5nm, the thickness of the conversion layer is 30~100nm, and the thickness of the top electrode layer is 50~300nm.
Further, bottom electrode layer described in above-mentioned technical proposal is any one of FTO, ITO, ZTO or TiN material.
Compared with prior art, the advantages of the present invention are：
(1) it is a kind of traditional High K materials using zirconium oxide in the present invention, the present invention is at niobium oxide conversion layer and bottom
Increase one layer of ultra-thin zirconium oxide tunnel layer between electrode layer, zirconium oxide tunnel layer effectively reduce device operation electric current and
Voltage is operated, the use power consumption of device can be significantly reduced, increases high-resistance resistors value, promotes nonlinearity, therefore present invention system
The niobium oxide gating device obtained has larger non-linear value, simultaneously as shift voltage is lower, device uses low in energy consumption；
(2) for the present invention using niobium oxide as conversion layer material, which not only has the spy that ingredient is simple, performance is stablized
Point, and introduce the material make the present invention have larger non-linear value, high ON state current density, stable electric property, because
This, gating device produced by the present invention has development potentiality and application value very much；
(3) present invention prepares columbium oxide film using magnetron sputtering, it is simple for process, securely and reliably with cmos process compatibles；
(4) gating device unit of the present invention using niobium oxide as conversion layer has good cycle tolerance.
Description of the drawings
Fig. 1 is that the cellular construction of the niobium oxide gating device based on zirconium oxide tunnel layer described in the embodiment of the present invention 1 shows
It is intended to；
Fig. 2 is is based on 0.64 μm in the embodiment of the present invention 1 and comparative example 12Square niobium oxide gating device I-V survey
Test result comparison diagram；
Fig. 3 is is based on 1 μm in the embodiment of the present invention 2 and comparative example 22Square niobium oxide gating device forming
Test result comparison diagram；
Fig. 4 is is based on 1 μm in the embodiment of the present invention 2 and comparative example 22Square niobium oxide gating device I-V test
Comparative result figure.
Specific embodiment
Technical scheme of the present invention is described in detail below by specific embodiment and attached drawing.Following reality
It is only preferred embodiments of the present invention to apply example, is not to the restriction of the invention for doing other forms, any skill for being familiar with this profession
The equivalent embodiment that art personnel are changed to change on an equal basis possibly also with the technology contents of the disclosure above.It is every without departing from this hair
Bright plan content, any simple modification or equivalent variations that technical spirit according to the present invention makes following embodiment, falls
Within the scope of the present invention.
Embodiment 1
A kind of niobium oxide gating device based on zirconium oxide tunnel layer of the present embodiment, the device wrap successively from bottom to up
Include bottom electrode layer 1, tunnel layer 2, conversion layer 3 and top electrode layer 4, wherein, the bottom electrode layer be TiN materials, the tunnel layer
For zirconium oxide (ZrO2) thin-film material, the conversion layer is columbium oxide film material, and the top electrode layer is Pt thin-film materials；Institute
The thickness for stating bottom electrode layer is 200nm, and the thickness of the tunnel layer is 3nm, and the thickness of the conversion layer is 45nm, the top electricity
The thickness of pole layer is 200nm；The bottom electrode layer, tunnel layer, conversion layer and top electrode layer shape be square, square
The length of side is 0.8 μm, and the cellular construction schematic diagram of the gating device is as shown in Figure 1.
The present embodiment niobium oxide gating device described above based on zirconium oxide tunnel layer, be prepared as follows and
Into the method specifically comprises the following steps：
(1) it is 0.64 μm to the area for carrying TiN hearth electrodes2Square film carrier base material carry out surface preparation；
(2) ceramic zirconium oxide target, ceramic niobium pentaoxide target and metal platinum target are installed respectively on magnetron sputtering apparatus, with
Argon gas is passed through for inert working gas in the vacuum chamber of magnetron sputtering apparatus；
(3) tunnel layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 120W, in bottom electrode layer surface deposited oxide zirconium tunnel layer, sedimentation time 80s has been deposited
Bi Hou closes rf magnetron sputtering power supply；
(4) conversion layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 120W, in step (2) the zirconium oxide tunnelling layer surface deposited oxide niobium conversion layer, deposit
Time is 800s, after deposition, closes rf magnetron sputtering power supply；
(5) top electrode layer is prepared：D. C magnetic control sputter power source is opened, the indoor system pressure of control vacuum is 4Torr, temperature
It spends for 300K, under conditions of power is 100W, in step (3) the niobium oxide conversion layer surface deposited metal platinum top electrode
Layer, sedimentation time 900s after deposition, close D. C magnetic control sputter power source, are cooled to room temperature, obtain the present embodiment
Niobium oxide gating device based on zirconium oxide tunnel layer, each layer shape of the gating device is square, and each level product is equal
It is 0.64 μm2。
Comparative example 1
The construction of gating device in the gating device of this comparative example, with embodiment 1 and preparation method all same, difference is only
It is, the gating device of this comparative example is free of tunnel layer, that is, the gating device of this comparative example only includes bottom electricity successively from bottom to up
Pole layer, conversion layer and top electrode layer, other are same as Example 1.
Performance test：
Gating device made from embodiment 1 and comparative example 1 is subjected to I-V tests respectively, test is in Agilent B1500A
It is carried out on Semiconductor Parameter Analyzer test platform.Top electrode and hearth electrode are contacted respectively first with two probes, then
Using the scanning voltage of Agilent B1500A test software settings -1.5V~+1.5V, one cycle of scanning voltage work is divided into four
Part is first scanned from 0V to+1.5V, then from+1.5V scannings to 0V, is then scanned to -1.5V from 0V, is finally scanned from -1.5V
To 0V, that is, a cycle is completed, each section scanning step number is 101, i.e. voltage scans to electric current during+1.5V from 0V and takes 101
Point, test result is as shown in Fig. 2, I-V test result of the bold portion for the gating device of embodiment 1, dotted portion are in Fig. 2
The I-V test results of the gating device of comparative example 1 as shown in Figure 2, introduce ultra-thin ZrO2The gating device of tunnel layer, it is non-linear
Ratio increases, and shift voltage reduces, and significantly improves the gating ratio and shift voltage of device, optimizes the resistance to crosstalk ability of device
And power consumption efficiency.
Embodiment 2
A kind of niobium oxide gating device based on zirconium oxide tunnel layer of the present embodiment, the device wrap successively from bottom to up
Bottom electrode layer, tunnel layer, conversion layer and top electrode layer are included, wherein, the bottom electrode layer is TiN materials, and the tunnel layer is oxygen
Change zirconium (ZrO2) thin-film material, the conversion layer is columbium oxide film material, and the top electrode layer is Pt thin-film materials；The bottom
The thickness of electrode layer is 200nm, and the thickness of the tunnel layer is 3nm, and the thickness of the conversion layer is 45nm, the top electrode layer
Thickness be 200nm；The bottom electrode layer, tunnel layer, conversion layer and top electrode layer shape be square, the square length of side
It is 1 μm.
The present embodiment niobium oxide gating device described above based on zirconium oxide tunnel layer, be prepared as follows and
Into the method specifically comprises the following steps：
(1) it is 1 μm to the area for carrying TiN hearth electrodes2Square film carrier base material carry out surface preparation；
(2) ceramic zirconium oxide target, ceramic niobium pentaoxide target and metal platinum target are installed respectively on magnetron sputtering apparatus, with
Argon gas is passed through for inert working gas in the vacuum chamber of magnetron sputtering apparatus；
(3) tunnel layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 120W, in bottom electrode layer surface deposited oxide zirconium tunnel layer, sedimentation time 80s has been deposited
Bi Hou closes rf magnetron sputtering power supply；
(4) conversion layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 120W, in step (2) the zirconium oxide tunnelling layer surface deposited oxide niobium conversion layer, deposit
Time is 800s, after deposition, closes rf magnetron sputtering power supply；
(5) top electrode layer is prepared：D. C magnetic control sputter power source is opened, the indoor system pressure of control vacuum is 4Torr, temperature
It spends for 300K, under conditions of power is 100W, in step (3) the niobium oxide conversion layer surface deposited metal platinum top electrode
Layer, sedimentation time 900s after deposition, close D. C magnetic control sputter power source, are cooled to room temperature, obtain the present embodiment
Niobium oxide gating device based on zirconium oxide tunnel layer, each layer shape of the gating device is square, and each level product is equal
It is 1 μm2。
Comparative example 2
The construction of gating device in the gating device of this comparative example, with embodiment 2 and preparation method all same, difference is only
It is, the gating device of this comparative example is free of tunnel layer, that is, the gating device of this comparative example only includes bottom electricity successively from bottom to up
Pole layer, conversion layer and top electrode layer, other are same as Example 2.
Performance test：
I-V tests will be carried out in the niobium oxide gating device of zirconium oxide tunnel layer made from the present embodiment, test is to pacify
It is carried out on prompt human relations B1500A Semiconductor Parameter Analyzer test platforms.Top electrode and bottom are contacted respectively first with two probes
Electrode, then using the scanning voltage of Agilent B1500A test software settings -1.5V~+1.5V, scanning voltage works one
Cycle is divided into four parts, is first scanned from 0V to+1.5V, then from+1.5V scannings to 0V, then from 0V scannings to -1.5V, finally
It is scanned from -1.5V to 0V, that is, completes a cycle, each section scanning step number is 101, i.e., when voltage is from 0V scannings to+1.5V
Electric current takes 101 points, forming test results as shown in figure 3, I-V test results as shown in figure 4, wherein：Solid line portion in Fig. 3
It is divided into the forming test results of the gating device of embodiment 2, dotted portion is surveyed for the forming of the gating device of comparative example 2
Test result；I-V test result of the bold portion for the gating device of embodiment 2 in Fig. 4, dotted portion are the gating of comparative example 2
The I-V test results of device.As shown in Figure 4, ultra-thin ZrO is introduced2The non-linear ratio increase of gating device of tunnel layer, transformation electricity
Pressure reduces, and significantly improves the gating ratio and shift voltage of device, optimizes the resistance to crosstalk ability and power consumption efficiency of device.
Embodiment 3
A kind of niobium oxide gating device based on zirconium oxide tunnel layer of the present embodiment, the device wrap successively from bottom to up
Bottom electrode layer, tunnel layer, conversion layer and top electrode layer are included, wherein, the bottom electrode layer is FTO materials, and the tunnel layer is oxygen
Change zirconium (ZrO2) thin-film material, the conversion layer is columbium oxide film material, and the top electrode layer is Pt thin-film materials；The bottom
The thickness of electrode layer is 50nm, and the thickness of the tunnel layer is 1nm, and the thickness of the conversion layer is 30nm, the top electrode layer
Thickness be 50nm；The bottom electrode layer, tunnel layer, conversion layer and top electrode layer shape be square, the square length of side
For 100nm.
The present embodiment niobium oxide gating device described above based on zirconium oxide tunnel layer, be prepared as follows and
Into the method specifically comprises the following steps：
(1) it is (100nm) to the area for carrying FTO hearth electrodes2Square film carrier base material carry out surface preparation；
(2) ceramic zirconium oxide target, ceramic niobium pentaoxide target and metal platinum target are installed respectively on magnetron sputtering apparatus, with
Argon gas is passed through for inert working gas in the vacuum chamber of magnetron sputtering apparatus；
(3) tunnel layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 100W, in bottom electrode layer surface deposited oxide zirconium tunnel layer, sedimentation time 20s has been deposited
Bi Hou closes rf magnetron sputtering power supply；
(4) conversion layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 100W, in step (2) the zirconium oxide tunnelling layer surface deposited oxide niobium conversion layer, deposit
Time is 600s, after deposition, closes rf magnetron sputtering power supply；
(5) top electrode layer is prepared：D. C magnetic control sputter power source is opened, the indoor system pressure of control vacuum is 4Torr, temperature
It spends for 300K, under conditions of power is 80W, in step (3) the niobium oxide conversion layer surface deposited metal platinum top electrode layer,
Sedimentation time is 200s, after deposition, closes D. C magnetic control sputter power source, is cooled to room temperature, obtains the base of the present embodiment
In the niobium oxide gating device of zirconium oxide tunnel layer, each layer shape of the gating device is square, and each level product is
(100nm)2。
Embodiment 4
A kind of niobium oxide gating device based on zirconium oxide tunnel layer of the present embodiment, the device wrap successively from bottom to up
Bottom electrode layer, tunnel layer, conversion layer and top electrode layer are included, wherein, the bottom electrode layer is ITO materials, and the tunnel layer is oxygen
Change zirconium (ZrO2) thin-film material, the conversion layer is columbium oxide film material, and the top electrode layer is Pt thin-film materials；The bottom
The thickness of electrode layer is 300nm, and the thickness of the tunnel layer is 5nm, and the thickness of the conversion layer is 100nm, the top electrode
The thickness of layer is 300nm；The bottom electrode layer, tunnel layer, conversion layer and top electrode layer shape be square, square side
A length of 4 μm.
The present embodiment niobium oxide gating device described above based on zirconium oxide tunnel layer, be prepared as follows and
Into the method specifically comprises the following steps：
(1) it is 16 μm to the area for carrying ITO hearth electrodes2Square film carrier base material carry out surface pretreatment；
(2) ceramic zirconium oxide target, ceramic niobium pentaoxide target and metal platinum target are installed respectively on magnetron sputtering apparatus, with
Argon gas is passed through for inert working gas in the vacuum chamber of magnetron sputtering apparatus；
(3) tunnel layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 140W, in bottom electrode layer surface deposited oxide zirconium tunnel layer, sedimentation time 60s has been deposited
Bi Hou closes rf magnetron sputtering power supply；
(4) conversion layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 140W, in step (2) the zirconium oxide tunnelling layer surface deposited oxide niobium conversion layer, deposit
Time is 2000s, after deposition, closes rf magnetron sputtering power supply；
(5) top electrode layer is prepared：D. C magnetic control sputter power source is opened, the indoor system pressure of control vacuum is 4Torr, temperature
It spends for 300K, under conditions of power is 120W, in step (3) the niobium oxide conversion layer surface deposited metal platinum top electrode
Layer, sedimentation time 1200s after deposition, close D. C magnetic control sputter power source, are cooled to room temperature, obtain the present embodiment
The niobium oxide gating device based on zirconium oxide tunnel layer, each layer shape of the gating device is square, each level product
It is 16 μm2。
Embodiment 5
A kind of niobium oxide gating device based on zirconium oxide tunnel layer of the present embodiment, the device wrap successively from bottom to up
Bottom electrode layer, tunnel layer, conversion layer and top electrode layer are included, wherein, the bottom electrode layer is ZTO materials, and the tunnel layer is oxygen
Change zirconium (ZrO2) thin-film material, the conversion layer is columbium oxide film material, and the top electrode layer is Pt thin-film materials；The bottom
The thickness of electrode layer is 200nm, and the thickness of the tunnel layer is 3nm, and the thickness of the conversion layer is 45nm, the top electrode layer
Thickness be 200nm；The bottom electrode layer, tunnel layer, conversion layer and top electrode layer shape be square, the square length of side
It is 0.4 μm.
The present embodiment niobium oxide gating device described above based on zirconium oxide tunnel layer, be prepared as follows and
Into the method specifically comprises the following steps：
(1) it is 0.16 μm to the area for carrying ZTO hearth electrodes2Square film carrier base material carry out surface preparation；
(2) ceramic zirconium oxide target, ceramic niobium pentaoxide target and metal platinum target are installed respectively on magnetron sputtering apparatus, with
Argon gas is passed through for inert working gas in the vacuum chamber of magnetron sputtering apparatus；
(3) tunnel layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 120W, in bottom electrode layer surface deposited oxide zirconium tunnel layer, sedimentation time 80s has been deposited
Bi Hou closes rf magnetron sputtering power supply；
(4) conversion layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 120W, in step (2) the zirconium oxide tunnelling layer surface deposited oxide niobium conversion layer, deposit
Time is 800s, after deposition, closes rf magnetron sputtering power supply；
(5) top electrode layer is prepared：D. C magnetic control sputter power source is opened, the indoor system pressure of control vacuum is 4Torr, temperature
It spends for 300K, under conditions of power is 100W, in step (3) the niobium oxide conversion layer surface deposited metal platinum top electrode
Layer, sedimentation time 900s after deposition, close D. C magnetic control sputter power source, are cooled to room temperature, obtain the present embodiment
Niobium oxide gating device based on zirconium oxide tunnel layer, each layer shape of the gating device is square, and each level product is equal
It is 0.16 μm2。
Embodiment 6
A kind of niobium oxide gating device based on zirconium oxide tunnel layer of the present embodiment, the device wrap successively from bottom to up
Bottom electrode layer, tunnel layer, conversion layer and top electrode layer are included, wherein, the bottom electrode layer is TiN materials, and the tunnel layer is oxygen
Change zirconium (ZrO2) thin-film material, the conversion layer is columbium oxide film material, and the top electrode layer is Pt thin-film materials；The bottom
The thickness of electrode layer is 200nm, and the thickness of the tunnel layer is 3nm, and the thickness of the conversion layer is 45nm, the top electrode layer
Thickness be 200nm；The bottom electrode layer, tunnel layer, conversion layer and top electrode layer shape be square, the square length of side
It is 100 μm.
The present embodiment niobium oxide gating device described above based on zirconium oxide tunnel layer, be prepared as follows and
Into the method specifically comprises the following steps：
(1) it is (100 μm) to the area for carrying TiN hearth electrodes2Square film carrier base material surface carry out cleaning treatment；
(2) ceramic zirconium oxide target, ceramic niobium pentaoxide target and metal platinum target are installed respectively on magnetron sputtering apparatus, with
Argon gas is passed through for inert working gas in the vacuum chamber of magnetron sputtering apparatus；
(3) tunnel layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 120W, in bottom electrode layer surface deposited oxide zirconium tunnel layer, sedimentation time 80s has been deposited
Bi Hou closes rf magnetron sputtering power supply；
(4) conversion layer is prepared：Rf magnetron sputtering power supply is opened, the indoor system pressure of control vacuum is 4Torr, temperature
For 300K, under the conditions of power is 120W, in step (2) the zirconium oxide tunnelling layer surface deposited oxide niobium conversion layer, deposit
Time is 800s, after deposition, closes rf magnetron sputtering power supply；
(5) top electrode layer is prepared：D. C magnetic control sputter power source is opened, the indoor system pressure of control vacuum is 4Torr, temperature
It spends for 300K, under conditions of power is 100W, in step (3) the niobium oxide conversion layer surface deposited metal platinum top electrode
Layer, sedimentation time 900s after deposition, close D. C magnetic control sputter power source, are cooled to room temperature, obtain the present embodiment
Niobium oxide gating device based on zirconium oxide tunnel layer, each layer of gating device is square, and each level product is (100 μ
m)2。
Gating device made from embodiment 3~6 is subjected to I-V tests respectively, test result shows prepared gate
Part is respectively provided with good resistance to crosstalk ability, and gating is had excellent performance, and therefore, the present invention is by introducing ultra-thin ZrO2Tunnel layer, significantly
The gating ratio and shift voltage of device are improved, optimizes the resistance to crosstalk ability and power consumption efficiency of device.
Claims (10)
1. a kind of niobium oxide gating device based on zirconium oxide tunnel layer, it is characterised in that：The gating device from bottom to up according to
It is secondary including bottom electrode layer, tunnel layer, conversion layer and top electrode layer, wherein：The bottom electrode layer is FTO, ITO, ZTO or TiN material
Material any one of, the tunnel layer be zirconia film material, the conversion layer be columbium oxide film material, the top electrode
Layer is Pt thin-film materials, and the niobium oxide is NbOx。
2. the niobium oxide gating device according to claim 1 based on zirconium oxide tunnel layer, it is characterised in that：The oxygen
Change niobium is niobium pentaoxide.
3. the niobium oxide gating device according to claim 1 or 2 based on zirconium oxide tunnel layer, it is characterised in that：It is described
The thickness of bottom electrode layer is 50~300nm, and the thickness of the tunnel layer is 1~5nm, the thickness of the conversion layer for 30~
100nm, the thickness of the top electrode layer is 50~300nm.
4. the niobium oxide gating device according to claim 1 or 2 based on zirconium oxide tunnel layer, it is characterised in that：It is described
Bottom electrode layer, tunnel layer, conversion layer and top electrode layer shape be rectangular or square, the length of side is 100nm~100 μm.
5. the niobium oxide gating device according to claim 4 based on zirconium oxide tunnel layer, it is characterised in that：The bottom electricity
Pole layer, tunnel layer, conversion layer and top electrode layer shape be square, the length of side is 0.4 μm~4 μm.
6. a kind of method for preparing the niobium oxide gating device described in claim 1 based on zirconium oxide tunnel layer, feature exist
In：The method comprises the following steps：
(1) the film carrier substrate surface for carrying hearth electrode is pre-processed；
(2) zirconia film tunnel layer, columbium oxide film conversion layer are sequentially depositing on hearth electrode surface using magnetron sputtering technique
With metal platinum top electrode layer, the niobium oxide gating device of the present invention based on zirconium oxide tunnel layer is made.
7. the method for the niobium oxide gating device according to claim 6 based on zirconium oxide tunnel layer, it is characterised in that：Step
Suddenly the specific preparation process of the tunnel layer described in (2), conversion layer and top electrode layer is as follows：
(a) ceramic zirconium oxide target, ceramic niobium pentaoxide target and metal platinum target are installed respectively on magnetron sputtering apparatus, with argon gas
It is passed through in the vacuum chamber of magnetron sputtering apparatus for inert gas；
(b) tunnel layer is prepared：Magnetron sputtering power supply is opened, the control indoor system pressure of vacuum is 4Torr, temperature 300K,
Under the conditions of power is 100~140W, in bottom electrode layer surface deposited oxide zirconium tunnel layer, sedimentation time is 20~80s, is deposited
After, close magnetron sputtering power supply；
(c) conversion layer is prepared：Magnetron sputtering power supply is opened, the control indoor system pressure of vacuum is 4Torr, temperature 300K,
Under the conditions of power is 100~140W, in step (b) the zirconium oxide tunnelling layer surface deposited oxide niobium conversion layer, deposition
Between for 600~2000s, after deposition, close magnetron sputtering power supply；
(d) top electrode layer is prepared：Magnetron sputtering power supply is opened, the control indoor system pressure of vacuum is 4Torr, temperature is
300K, under conditions of power is 80~120W, in step (c) the niobium oxide conversion layer surface deposited metal platinum top electrode
Layer, sedimentation time is 200~1200s, after deposition, closes magnetron sputtering power supply, is cooled to room temperature, obtains institute of the present invention
The niobium oxide gating device based on zirconium oxide tunnel layer stated
8. the method for the niobium oxide gating device according to claim 7 based on zirconium oxide tunnel layer, it is characterised in that：Step
Suddenly the magnetron sputtering used in (b), step (c) is rf magnetron sputtering, and the magnetron sputtering used in step (d) is direct magnetic control
Sputtering.
It is 9. special according to the method for niobium oxide gating device of claim 6~8 any one of them based on zirconium oxide tunnel layer
Sign is：The thickness of the bottom electrode layer is 50~300nm, and the thickness of the tunnel layer is 1~5nm, the thickness of the conversion layer
It spends for 30~100nm, the thickness of the top electrode layer is 50~300nm.
10. according to the method for niobium oxide gating device of claim 6~8 any one of them based on zirconium oxide tunnel layer,
It is characterized in that：The bottom electrode layer is any one of FTO, ITO, ZTO or TiN material.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110943102A (en) * | 2019-11-12 | 2020-03-31 | 华中科技大学 | High-density phase change memory three-dimensional integrated circuit structure |
| CN111223986A (en) * | 2020-01-14 | 2020-06-02 | 湖北大学 | Silver intercalation gating device based on hafnium oxide transition layer and manufacturing method thereof |
| CN112289929A (en) * | 2020-10-20 | 2021-01-29 | 湖北大学 | Niobium oxide gate tube |
| CN112885868A (en) * | 2021-02-03 | 2021-06-01 | 湖北大学 | 1S1R device based on niobium oxide gate tube and preparation method thereof |
| CN113555499A (en) * | 2021-06-11 | 2021-10-26 | 河北大学 | Solid electrolyte threshold switch device, preparation method thereof and 1S1R integrated structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399209A (en) * | 2008-09-26 | 2009-04-01 | 中国科学院微电子研究所 | Method for producing non-volatility memory |
| CN102610748A (en) * | 2011-01-25 | 2012-07-25 | 中国科学院微电子研究所 | Nonvolatile memory unit and memory |
| CN103579500A (en) * | 2012-08-10 | 2014-02-12 | 三星电子株式会社 | Resistance switching material element and device employing the same |
| CN105826468A (en) * | 2016-04-29 | 2016-08-03 | 中国科学院微电子研究所 | Self-gating Resistive Random-Access Memory device and preparation method thereof |
| CN208127213U (en) * | 2018-03-16 | 2018-11-20 | 湖北大学 | A kind of niobium oxide gating device based on zirconium oxide tunnel layer |
-
2018
- 2018-03-16 CN CN201810217499.XA patent/CN108231823B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399209A (en) * | 2008-09-26 | 2009-04-01 | 中国科学院微电子研究所 | Method for producing non-volatility memory |
| CN102610748A (en) * | 2011-01-25 | 2012-07-25 | 中国科学院微电子研究所 | Nonvolatile memory unit and memory |
| CN103579500A (en) * | 2012-08-10 | 2014-02-12 | 三星电子株式会社 | Resistance switching material element and device employing the same |
| CN105826468A (en) * | 2016-04-29 | 2016-08-03 | 中国科学院微电子研究所 | Self-gating Resistive Random-Access Memory device and preparation method thereof |
| CN208127213U (en) * | 2018-03-16 | 2018-11-20 | 湖北大学 | A kind of niobium oxide gating device based on zirconium oxide tunnel layer |
Non-Patent Citations (1)
| Title |
|---|
| WANG ZIWEN, ET AL,: "Effect of thermal insulation on the electrical characteristics of NbOx threshold switches", 《 APPLIED PHYSICS LETTERS》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110943102A (en) * | 2019-11-12 | 2020-03-31 | 华中科技大学 | High-density phase change memory three-dimensional integrated circuit structure |
| CN110943102B (en) * | 2019-11-12 | 2023-07-18 | 华中科技大学 | Three-dimensional integrated circuit structure of high-density phase change memory |
| CN111223986A (en) * | 2020-01-14 | 2020-06-02 | 湖北大学 | Silver intercalation gating device based on hafnium oxide transition layer and manufacturing method thereof |
| CN111223986B (en) * | 2020-01-14 | 2023-09-12 | 湖北大学 | Silver intercalation gating device based on hafnium oxide transition layer and manufacturing method thereof |
| CN112289929A (en) * | 2020-10-20 | 2021-01-29 | 湖北大学 | Niobium oxide gate tube |
| CN112289929B (en) * | 2020-10-20 | 2021-08-20 | 湖北大学 | Niobium oxide gate tube |
| CN112885868A (en) * | 2021-02-03 | 2021-06-01 | 湖北大学 | 1S1R device based on niobium oxide gate tube and preparation method thereof |
| CN113555499A (en) * | 2021-06-11 | 2021-10-26 | 河北大学 | Solid electrolyte threshold switch device, preparation method thereof and 1S1R integrated structure |
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