CN108807643B - 一种半导体封装结构及其制造方法 - Google Patents
一种半导体封装结构及其制造方法 Download PDFInfo
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- CN108807643B CN108807643B CN201810618255.2A CN201810618255A CN108807643B CN 108807643 B CN108807643 B CN 108807643B CN 201810618255 A CN201810618255 A CN 201810618255A CN 108807643 B CN108807643 B CN 108807643B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 238000009413 insulation Methods 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 17
- 239000011347 resin Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000741 silica gel Substances 0.000 claims abstract description 16
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 16
- 239000011159 matrix material Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 91
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 67
- 229920001971 elastomer Polymers 0.000 claims description 19
- 229920001296 polysiloxane Polymers 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 16
- 239000012790 adhesive layer Substances 0.000 claims description 13
- 229920001973 fluoroelastomer Polymers 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229920006361 Polyflon Polymers 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 9
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 101000705607 Homo sapiens Protein PET100 homolog, mitochondrial Proteins 0.000 claims description 4
- 102100031244 Protein PET100 homolog, mitochondrial Human genes 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 238000013016 damping Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000003292 glue Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810618255.2A CN108807643B (zh) | 2018-06-15 | 2018-06-15 | 一种半导体封装结构及其制造方法 |
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CN201810618255.2A CN108807643B (zh) | 2018-06-15 | 2018-06-15 | 一种半导体封装结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN108807643A CN108807643A (zh) | 2018-11-13 |
CN108807643B true CN108807643B (zh) | 2019-11-01 |
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CN201810618255.2A Active CN108807643B (zh) | 2018-06-15 | 2018-06-15 | 一种半导体封装结构及其制造方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113299846B (zh) * | 2021-04-13 | 2022-09-09 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示面板的制备方法 |
CN117747444B (zh) * | 2024-02-07 | 2024-05-14 | 中国科学院长春光学精密机械与物理研究所 | 一种半导体功率器件的封装方法及封装结构 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2864341Y (zh) * | 2005-07-26 | 2007-01-31 | 鑫谷光电股份有限公司 | 半导体照明光源 |
KR101072143B1 (ko) * | 2009-02-20 | 2011-10-10 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
CN102194807A (zh) * | 2010-03-12 | 2011-09-21 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
TWI446602B (zh) * | 2011-06-13 | 2014-07-21 | Subtron Technology Co Ltd | 封裝載板及封裝結構 |
CN203910794U (zh) * | 2014-06-06 | 2014-10-29 | 四川广义微电子股份有限公司 | 二极管芯片联合封装结构 |
CN106505140B (zh) * | 2016-12-28 | 2018-11-09 | 苏州诺联芯电子科技有限公司 | 一种红外识别光源及制造方法 |
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2018
- 2018-06-15 CN CN201810618255.2A patent/CN108807643B/zh active Active
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Effective date of registration: 20190919 Address after: 226600 169 Li Fa FA Road, Chengdong Town, Haian City, Nantong, Jiangsu. Applicant after: Nantong Ji Zhi Intellectual Property Service Co., Ltd. Address before: 226300 No. 266 Century Avenue, hi tech Zone, Jiangsu, Nantong Applicant before: Nantong Voight Optoelectronics Technology Co., Ltd. |
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TA01 | Transfer of patent application right |
Effective date of registration: 20191008 Address after: 226300 No. 266 Century Avenue, hi tech Zone, Jiangsu, Nantong Applicant after: Nantong Voight Optoelectronics Technology Co., Ltd. Address before: 226600 169 Li Fa FA Road, Chengdong Town, Haian City, Nantong, Jiangsu. Applicant before: Nantong Ji Zhi Intellectual Property Service Co., Ltd. |
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Effective date of registration: 20191227 Address after: Hong Qiao Zhen Chang Shan Qian Cun, Leqing City, Wenzhou City, Zhejiang Province Patentee after: Wang Peipei Address before: 226300 No. 266 Century Avenue, hi tech Zone, Jiangsu, Nantong Patentee before: Nantong Voight Optoelectronics Technology Co., Ltd. |
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Effective date of registration: 20200521 Address after: 226600 No.188, Baichuan Road, Haian high tech Zone, Haian City, Nantong City, Jiangsu Province Patentee after: JIANGSU SHUANGSHUANG HI-TECH Co.,Ltd. Address before: Hong Qiao Zhen Chang Shan Qian Cun, Leqing City, Wenzhou City, Zhejiang Province Patentee before: Wang Peipei |