CN108803005A - A kind of two dimension MEMS galvanometer control methods - Google Patents

A kind of two dimension MEMS galvanometer control methods Download PDF

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Publication number
CN108803005A
CN108803005A CN201810584679.1A CN201810584679A CN108803005A CN 108803005 A CN108803005 A CN 108803005A CN 201810584679 A CN201810584679 A CN 201810584679A CN 108803005 A CN108803005 A CN 108803005A
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China
Prior art keywords
mems galvanometers
mems
galvanometers
angle
voltage
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CN201810584679.1A
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Chinese (zh)
Inventor
刘定
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Beijing Da Han Zhengyuan Technology Co Ltd
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Beijing Da Han Zhengyuan Technology Co Ltd
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Priority to CN201810584679.1A priority Critical patent/CN108803005A/en
Publication of CN108803005A publication Critical patent/CN108803005A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0858Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10Scanning systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Optical Scanning Systems (AREA)

Abstract

The invention discloses a kind of two dimension MEMS galvanometer control methods.By the present invention in that MEMS galvanometers according to Lissajou figure into horizontal deflection,It is certain relationship to make the output voltage of MEMS galvanometers current angular and MEMS galvanometers,Using the SPI interface of ARM to the resolution ratio of MEMS galvanometers,Maximum deflection angle and rotational frequency are configured,And utilize GPIO output zero degree index pulses and angle index pulse,To the existing driving method to MEMS galvanometers,To the state collection method of MEMS galvanometers,The configurable method and external output method of MEMS galvanometers are improved,The control of efficient stable can be carried out to two-dimentional MEMS galvanometers,Simply the parameter of two-dimentional MEMS galvanometers can be configured,And simulation Lissajou figure carries out continuous scanning,Make the efficiency of two-dimentional MEMS galvanometers,Resolution ratio is improved,And the service life of two-dimentional MEMS galvanometers is made to extend.

Description

A kind of two dimension MEMS galvanometer control methods
Technical field
The present invention relates to laser scanner technique field, specific field is a kind of two dimension MEMS galvanometer control methods.
Background technology
Light scanning lens are a kind of outstanding vector scan equipment, and incident beam can be made suitable with the time in particular manner Sequence reflects, to realize scanning imagery in image planes.It is divided into a peacekeeping two-dimensional scan according to scanning dimension, two-dimentional MEMS shakes Mirror is actually the optical mirror that simple harmonic oscillation can be done along two axis, and one-dimensional galvanometer is more than in control difficulty.In laser In radar, high-resolution scan image, generally use two dimension MEMS galvanometers make laser according to preset angle in order to obtain Degree and frequency are scanned.The control that stability and high efficiency can be carried out to two-dimentional MEMS galvanometers, is before laser radar is achieved One of carry, it is therefore desirable to a kind of control method of the two-dimentional MEMS galvanometers of stability and high efficiency.
Invention content
The purpose of the present invention is to provide a kind of two dimension MEMS galvanometer control methods, to solve to propose in above-mentioned background technology The problem of.
To achieve the above object, the present invention provides the following technical solutions:A kind of two dimension MEMS galvanometer control methods, including it is right The driving method of MEMS galvanometers, the state collection method to MEMS galvanometers, the configurable method to MEMS galvanometers and externally output The main contents of method, the driving method to MEMS galvanometers are:Make MEMS galvanometers according to Lissajou figure into horizontal deflection;
The main contents of the state collection method to MEMS galvanometers are:Make the defeated of MEMS galvanometers current angular and MEMS galvanometers It is certain relationship to go out voltage, and herein under relationship, real-time collected voltage is angle-data;
The main contents of the configurable method to MEMS galvanometers are:Resolution using the SPI interface of ARM to MEMS galvanometers Rate, maximum deflection angle and rotational frequency are configured;
The main contents of the external output method are:Zero degree index pulse and angle index pulse are exported using GPIO.
Preferably, the particular content of the driving method to MEMS galvanometers is:
1)It is the sine wave of integer multiple to generate two frequencies not using DAC, and one represents x-axis, another represents y-axis;
2)Using horizontal direction as x-axis, vertical direction is y-axis, and simulation Lissajou figure carries out continuous scanning.
Preferably, the particular content of the state collection method to MEMS galvanometers is:
1)In initialization, output voltage of the acquisition without the MEMS galvanometers under DAC input states is worth as the reference voltage, is zero degree Voltage value;
2)In normal operation, acquisition crest voltage corresponds to the maximum deflection angle angle value of MEMS galvanometers;
3)Calculate the difference of crest voltage and zero degree voltage, the pressure difference as maximum deflection angle;
4)Above-mentioned voltage value is acquired in real time, calculates the variation of current angular.
Preferably, the particular content of the configurable method to MEMS galvanometers is:
1)The resolution ratio, maximum deflection angle and rotational frequency of MEMS galvanometers are configured using the SPI interface of ARM;
2)The configuration of MEMS galvanometers is read using the SPI interface of ARM;
3)The state of MEMS galvanometers is read using the SPI interface of ARM;
4)The work and stopping of MEMS galvanometers are controlled using the SPI interface of ARM.
Preferably, the particular content of the external output method is:
1)MEMS galvanometers, which are often scanned from negative angle to positive-angle to zero degree position, just exports a pulse, as zero degree mark arteries and veins Punching;
2)The angle interval for often increaseing or decreasing a setting just exports a pulse, as angle index pulse;
3)The zero degree index pulse and the angle index pulse utilize GPIO to export.
Compared with prior art, the beneficial effects of the invention are as follows:By the present invention in that MEMS galvanometers are according to Lissajou figure Into horizontal deflection, it is certain relationship to make MEMS galvanometers current angular and the output voltage of MEMS galvanometers, utilizes the SPI interface pair of ARM Resolution ratio, maximum deflection angle and the rotational frequency of MEMS galvanometers are configured, and export zero degree index pulse using GPIO And angle index pulse, to it is existing to the driving method of MEMS galvanometers, to the state collection method of MEMS galvanometers, shake to MEMS The configurable method of mirror and external output method are improved, and the control of efficient stable can be carried out to two-dimentional MEMS galvanometers, can be with Simply the parameter of two-dimentional MEMS galvanometers is configured, and simulates Lissajou figure and carries out continuous scanning, two-dimentional MEMS is made to shake Efficiency, the resolution ratio of mirror are improved, and the service life of two-dimentional MEMS galvanometers is made to extend.
Description of the drawings
Fig. 1 is the job control flow chart using the inside of the MEMS of control method proposed by the present invention;
Fig. 2 is the external output flow chart using the MEMS of control method proposed by the present invention;
Fig. 3 is the connection diagram using the required modules of control method proposed by the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
- 3 are please referred to Fig.1, the present invention provides a kind of technical solution:A kind of two dimension MEMS galvanometer control methods, including it is right The driving method of MEMS galvanometers, the state collection method to MEMS galvanometers, the configurable method to MEMS galvanometers and externally output The main contents of method, the driving method to MEMS galvanometers are:Make MEMS galvanometers according to Lissajou figure into horizontal deflection;
The main contents of the state collection method to MEMS galvanometers are:Make the defeated of MEMS galvanometers current angular and MEMS galvanometers It is certain relationship to go out voltage, and herein under relationship, real-time collected voltage is angle-data;
The main contents of the configurable method to MEMS galvanometers are:Resolution using the SPI interface of ARM to MEMS galvanometers Rate, maximum deflection angle and rotational frequency are configured;
The main contents of the external output method are:Zero degree index pulse and angle index pulse are exported using GPIO.
Specifically, the particular content of the driving method to MEMS galvanometers is:
1)Two frequencies generated using DAC be the sine wave of integer multiple, one represents x-axis, another represents y-axis, can be with Increase scanning element, improves resolution ratio;
2)Using horizontal direction as x-axis, vertical direction is y-axis, and simulation Lissajou figure carries out continuous scanning.
Specifically, the particular content of the state collection method to MEMS galvanometers is:
1)In initialization, output voltage of the acquisition without the MEMS galvanometers under DAC input states is worth as the reference voltage, is zero degree Voltage value;
2)In normal operation, acquisition crest voltage corresponds to the maximum deflection angle angle value of MEMS galvanometers;
3)The difference for calculating crest voltage and zero degree voltage, as the pressure difference of maximum deflection angle, at this time 0 ° and maximum angle it Between voltage value it is just linear incremental;
4)Above-mentioned voltage value is acquired in real time, calculates the variation of current angular.
Specifically, the particular content of the configurable method to MEMS galvanometers is:
1)The resolution ratio, maximum deflection angle and rotational frequency of MEMS galvanometers are configured using the SPI interface of ARM;
2)The configuration of MEMS galvanometers is read using the SPI interface of ARM;
3)The state of MEMS galvanometers is read using the SPI interface of ARM;
4)The work and stopping of MEMS galvanometers are controlled using the SPI interface of ARM.
Specifically, the particular content of the external output method is:
1)MEMS galvanometers are often scanned from negative angle to positive-angle to zero degree position, a pulse are just exported, as zero degree mark arteries and veins Punching;
2)The angle interval for often increaseing or decreasing a setting just exports a pulse, as angle index pulse;
3)The zero degree index pulse and the angle index pulse utilize GPIO to export, to ensure real-time.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace And modification, the scope of the present invention is defined by the appended.

Claims (5)

1. a kind of two dimension MEMS galvanometer control methods include to the driving method of MEMS galvanometers, to the state acquisition of MEMS galvanometers Method, the configurable method to MEMS galvanometers and external output method, it is characterised in that:The driving method to MEMS galvanometers Main contents be:Make MEMS galvanometers according to Lissajou figure into horizontal deflection;
The main contents of the state collection method to MEMS galvanometers are:Make the defeated of MEMS galvanometers current angular and MEMS galvanometers It is certain relationship to go out voltage, and herein under relationship, real-time collected voltage is angle-data;
The main contents of the configurable method to MEMS galvanometers are:Resolution using the SPI interface of ARM to MEMS galvanometers Rate, maximum deflection angle and rotational frequency are configured;
The main contents of the external output method are:Zero degree index pulse and angle index pulse are exported using GPIO.
2. a kind of two dimension MEMS galvanometer control methods according to claim 1, it is characterised in that:It is described to MEMS galvanometers The particular content of driving method is:
1)It is the sine wave of integer multiple to generate two frequencies not using DAC, and one represents x-axis, another represents y-axis;
2)Using horizontal direction as x-axis, vertical direction is y-axis, and simulation Lissajou figure carries out continuous scanning.
3. a kind of two dimension MEMS galvanometer control methods according to claim 1, it is characterised in that:It is described to MEMS galvanometers The particular content of state collection method is:
1)In initialization, output voltage of the acquisition without the MEMS galvanometers under DAC input states is worth as the reference voltage, is zero degree Voltage value;
2)In normal operation, acquisition crest voltage corresponds to the maximum deflection angle angle value of MEMS galvanometers;
3)Calculate the difference of crest voltage and zero degree voltage, the pressure difference as maximum deflection angle;
4)Above-mentioned voltage value is acquired in real time, calculates the variation of current angular.
4. a kind of two dimension MEMS galvanometer control methods according to claim 1, it is characterised in that:It is described to MEMS galvanometers The particular content of configurable method is:
1)The resolution ratio, maximum deflection angle and rotational frequency of MEMS galvanometers are configured using the SPI interface of ARM;
2)The configuration of MEMS galvanometers is read using the SPI interface of ARM;
3)The state of MEMS galvanometers is read using the SPI interface of ARM;
4)The work and stopping of MEMS galvanometers are controlled using the SPI interface of ARM.
5. a kind of two dimension MEMS galvanometer control methods according to claim 1, it is characterised in that:The external output method Particular content be:
1)MEMS galvanometers, which are often scanned from negative angle to positive-angle to zero degree position, just exports a pulse, as zero degree mark arteries and veins Punching;
2)The angle interval for often increaseing or decreasing a setting just exports a pulse, as angle index pulse;
3)The zero degree index pulse and the angle index pulse utilize GPIO to export.
CN201810584679.1A 2018-06-08 2018-06-08 A kind of two dimension MEMS galvanometer control methods Pending CN108803005A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109444590A (en) * 2018-11-19 2019-03-08 深圳市速腾聚创科技有限公司 MEMS device detection circuit and method
CN111464801A (en) * 2019-01-18 2020-07-28 广景视睿科技(深圳)有限公司 Galvanometer adjusting device, system and method and projector
CN113977073A (en) * 2020-07-27 2022-01-28 大族激光科技产业集团股份有限公司 Laser scanning processing method, laser scanning processing device, computer equipment and storage medium

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CN104932098A (en) * 2015-07-17 2015-09-23 京东方科技集团股份有限公司 Micromirror array, and backlight module and display apparatus applying the same
CN106052592A (en) * 2016-06-28 2016-10-26 西安励德微***科技有限公司 Scanning type structured light projection system and control method thereof
CN107229170A (en) * 2017-06-29 2017-10-03 西安知微传感技术有限公司 The projecting apparatus and projecting method scanned based on Lie groupoid picture

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Publication number Priority date Publication date Assignee Title
CN101261425A (en) * 2007-03-08 2008-09-10 弗劳恩霍夫应用研究促进协会 Projection equipment for scanning projection
CN101458392A (en) * 2007-12-13 2009-06-17 株式会社理光 Optical scanning device and image forming apparatus
CN102591008A (en) * 2012-02-14 2012-07-18 无锡微奥科技有限公司 Accurate open-loop control system and accurate open-loop control method of electric heating type micro-mirror
CN102739163A (en) * 2012-06-15 2012-10-17 中国科学院光电技术研究所 Modulator control and feedback system used in infrared radiation spectrum measurement
CN104932098A (en) * 2015-07-17 2015-09-23 京东方科技集团股份有限公司 Micromirror array, and backlight module and display apparatus applying the same
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CN107229170A (en) * 2017-06-29 2017-10-03 西安知微传感技术有限公司 The projecting apparatus and projecting method scanned based on Lie groupoid picture

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109444590A (en) * 2018-11-19 2019-03-08 深圳市速腾聚创科技有限公司 MEMS device detection circuit and method
CN111464801A (en) * 2019-01-18 2020-07-28 广景视睿科技(深圳)有限公司 Galvanometer adjusting device, system and method and projector
CN111464801B (en) * 2019-01-18 2021-07-16 广景视睿科技(深圳)有限公司 Galvanometer adjusting device, system and method and projector
CN113977073A (en) * 2020-07-27 2022-01-28 大族激光科技产业集团股份有限公司 Laser scanning processing method, laser scanning processing device, computer equipment and storage medium
CN113977073B (en) * 2020-07-27 2023-07-14 大族激光科技产业集团股份有限公司 Laser scanning processing method, device, computer equipment and storage medium

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Application publication date: 20181113