CN108767650A - A kind of function and service electro-optical Q-switch - Google Patents
A kind of function and service electro-optical Q-switch Download PDFInfo
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- CN108767650A CN108767650A CN201810616911.5A CN201810616911A CN108767650A CN 108767650 A CN108767650 A CN 108767650A CN 201810616911 A CN201810616911 A CN 201810616911A CN 108767650 A CN108767650 A CN 108767650A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The present invention discloses a kind of function and service electro-optical Q-switch, belongs to application of the crystalline material in field of photoelectric technology.The present invention is by one piece of KDP crystalloid or LiNbO3Crystal is according to a kind of function and service electro-optical Q-switch device made of certain design cut type.The natural birefringence effect and electrooptic effect of electro-optic crystal is utilized in it, can play the role of quarter wave plate and traditional electro-optical Q-switch simultaneously, it is electric-optically Q-switched can independently to carry out adding pressure type.The advantage of the invention is that:It no longer needs to use quarter wave plate or analyzer when voltage addition Q-switch, adjustment is simple and convenient, is conducive to the compactedness and stability that improve laser, and reduce cost.
Description
Technical field
The present invention relates to laser device field, more particularly to a kind of function and service electro-optical Q-switch.
Background technology
Q-regulating technique is one of current acquisition narrow pulse width, the most common mode of high-peak power laser, it refers to passing through
Some way makes the Q values of chamber so that chamber is in low reactance-resistance ratio state, i.e. cavity loss when pumping just starts by certain change of program
It is larger, laser generation can not be formed, the upper level inversion population in laser medium constantly accumulates at this time, when running up to maximum value
When, so that the Q values of chamber is increased to maximum suddenly, i.e. loss is kept to minimum, and laser generation at this time is set up rapidly, and in a short time
Level inversion population is consumed rapidly, is converted into laser energy output.Mainly there is electric-optically Q-switched, acousto-optic Q modulation, passive at present
Q, machinery is adjusted to adjust the technologies such as Q.
In all Q-regulating techniques, it is electric-optically Q-switched be used as a kind of actively Q-switched technology, switching rate is higher, be easily obtained compared with
Narrow pulse width, and high-precise synchronization easy to implement between laser and other linkage instruments, therefore obtain extensive
Using.The electric-optically Q-switched electrooptic effect using electro-optic crystal changes laser and passes through electricity by applying step-like voltage on crystal
Polarization state after luminescent crystal coordinates polarizer, realizes the low reactance-resistance ratio and high q-factor state of laser cavity.
It is electric-optically Q-switched that usually there are two types of working methods:Adding pressure type and move back pressure type.Adding pressure type refers to, electric when applying on crystal
When pressure, Q-switch is in the open state, i.e., chamber is in high q-factor state, and after removing voltage, chamber becomes low reactance-resistance ratio state, and it is anti-to move back pressure type
It.For traditional electro-optical Q-switch, usually matched along optical axis direction thang-kng or using two pieces of crystal two-fold to compensate nature
Penetrate, thus without apply voltage when, laser will not be changed by electro-optical Q-switch rear polarizer state.Realize adding pressure type electric light
It adjusts Q, intracavitary to must be inserted into analyzer or quarter wave plate, on the one hand increase insertion loss in this way, is unfavorable for the compact of laser
Property and stability;On the other hand, wave plate is larger by temperature and stress influence, to increase resetting difficulty, and cost also compared with
It is high.It is longer to apply high-voltage time although polarizer need not additionally be used by moving back pressure type tune Q, on crystal, not only to electric-optically Q-switched
Driving source proposes higher requirement, and the working life that will shorten Q-switch.
Invention content
It is electric-optically Q-switched purpose of the present invention is to obtain-kind can either carry out adding pressure type, and without additionally using optical polarization member
The electro-optical Q-switch of part.
Function and service electro-optical Q-switch provided by the invention, technical solution are as follows:
Electro-optic crystal is cut using special angle, and cut type isθ is laser propagation direction and the optical axis of crystal
Angle, value meets relational expression:Wherein,L is the length of optical direction
Degree, noAnd neFor the natural birefringence rate of electro-optic crystal, λ is optical maser wavelength.Nearly z-axis direction is optical direction, and both ends mirror polish is simultaneously
It is coated with laser anti-reflection film, laser is perpendicular to surface feeding sputtering.Electro-optic crystal can be LiNbO3Crystal or KDP crystalloids, for
LiNbO3Crystal applies electric field along nearly x-axis direction;For KDP crystalloids, apply electric field along optical direction.Electro-optic crystal cut type
Or
The advantage of the invention is that:The advantages of combining existing adding pressure type and moving back pressure type electric-optically Q-switched technology, avoids it
The shortcomings that.It is electric-optically Q-switched can either to carry out adding pressure type, and without using polarizers such as quarter wave plate or analyzers, such one
Aspect remains the advantages that electric-optically Q-switched technology of adding pressure type exchanges low Q driving sources requirement, electro-optical Q-switch long working life, another party
Face in turn avoids caused by wave plate is big by temperature and stress influence that resetting difficulty is big, laser system is not easy to stablize etc. and asks
Topic is conducive to the compactedness and stability that improve laser, and reduces cost.
Description of the drawings
Fig. 1 is the structural schematic diagram of the present invention-kind of function and service electro-optical Q-switch.X, y, z axis represents electro-optic crystal in figure
Each crystallographic axis.
Specific implementation mode
Embodiment:
Using LiNbO3Crystal prepares function and service electro-optical Q-switch, design Q-switch size be 9mm × 9mm ×
18.8mm is applied to the laser that optical maser wavelength is 1064nm.By formulaK=2 is taken,
Relevant parameter is substituted into, it is 1.7 ° to acquire θ values, by LiNbO3Crystal is according to (xztw) -1.2 °/1.2 ° cut type cuttings, along length side
To both ends mirror polish and plate the anti-reflection film of 1064nm, the two nearly faces x are coated with Ti/Au electrodes, apply electric field along nearly x-axis direction.
In application, by polariscopic laser perpendicular to crystal end-face incidence, polariscopic direction and the LiNbO of shaking3It is brilliant
The x-axis or y-axis of body are parallel.It will be seen from figure 1 that the angle of laser propagation direction and the optical axis of crystal is θ, i.e., 1.7 °, in xoy
The projection in face and the angle of x-axis are 45 °.
When being not added with voltage, laser by after crystal by natural birefringence generate phase difference be 5 pi/2s, eigen polarization direction
It is 45 ° with the angle in direction is polarized, after laser is reflected by total reflective mirror, the phase difference of 5 pi/2s is generated again by electro-optic crystal, because
This total phase difference is 5 π, and the relatively former polarization direction of laser polarization direction is rotated by 90 ° at this time, can not be by polariscope, at Q-switch
In off state, cavity loss is maximum, and Q values are minimum.
When applying 1/4 wave voltage on crystal, laser is 3 π by the phase difference variable generated after crystal, is led to twice back and forth
It is 6 π to cross the total phase difference generated after crystal, and laser polarization direction is identical with former polarization direction at this time, can pass through polariscope, Q
Switch in the open state, cavity loss minimum, Q value highests.
This electro-optical Q-switch is applied in Nd:In YAG laser, the electric-optically Q-switched purpose of independent progress adding pressure type is realized.
1/4 wave voltage is 2200V, and when repetition rate is 10Hz, it is 200mJ, pulse width 7ns that pulse, which exports energy,.
Claims (2)
1. a kind of function and service electro-optical Q-switch, it is characterised in that:Electro-optic crystal is cut along special angle, and cut type isθ meets relational expression:Wherein,L is optical direction
Length, noAnd neFor the natural birefringence rate of electro-optic crystal, λ is optical maser wavelength;Nearly z-axis direction is optical direction, both ends mirror polish
And it is coated with laser anti-reflection film, laser is perpendicular to surface feeding sputtering;Electro-optic crystal can be LiNbO3Crystal or KDP crystalloids, for
LiNbO3Crystal, along nearly x-axis direction added electric field;For KDP crystalloids, along optical direction added electric field.
2. function and service electro-optical Q-switch according to claim 1, it is characterised in that:Electro-optic crystal cut type may be
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112382920A (en) * | 2020-11-28 | 2021-02-19 | 河南工程学院 | Low-voltage laminated lithium niobate electro-optical Q switch |
CN112421372A (en) * | 2020-12-30 | 2021-02-26 | 河南工程学院 | Transverse modulation KDP type electro-optical Q switch |
CN113488841A (en) * | 2021-07-12 | 2021-10-08 | 河南工程学院 | Low-voltage independent pressurization type electro-optical Q switch |
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CN101499605A (en) * | 2009-02-19 | 2009-08-05 | 福州高意通讯有限公司 | A crystal device |
CN103259182A (en) * | 2013-04-26 | 2013-08-21 | 山东大学 | General electro-optical Q-switching switch and Q-switching laser for broadband passing through optical rotation crystal for single or odd times |
US20130240740A1 (en) * | 2012-03-13 | 2013-09-19 | Canon Kabushiki Kaisha | Sensor device |
US20140192829A1 (en) * | 2010-11-09 | 2014-07-10 | Mark K. Henesian | Multi-crystal frequency tripler for third harmonic conversion |
CN205724360U (en) * | 2016-06-06 | 2016-11-23 | 中国工程物理研究院应用电子学研究所 | A kind of Q-switched pulse laser being switched fast polarization state |
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Patent Citations (6)
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US20030006679A1 (en) * | 2001-07-06 | 2003-01-09 | Hirofumi Kawashima | Width-extensional Mode piezoelectric crystal resonator |
CN101499605A (en) * | 2009-02-19 | 2009-08-05 | 福州高意通讯有限公司 | A crystal device |
US20140192829A1 (en) * | 2010-11-09 | 2014-07-10 | Mark K. Henesian | Multi-crystal frequency tripler for third harmonic conversion |
US20130240740A1 (en) * | 2012-03-13 | 2013-09-19 | Canon Kabushiki Kaisha | Sensor device |
CN103259182A (en) * | 2013-04-26 | 2013-08-21 | 山东大学 | General electro-optical Q-switching switch and Q-switching laser for broadband passing through optical rotation crystal for single or odd times |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN112382920A (en) * | 2020-11-28 | 2021-02-19 | 河南工程学院 | Low-voltage laminated lithium niobate electro-optical Q switch |
CN112421372A (en) * | 2020-12-30 | 2021-02-26 | 河南工程学院 | Transverse modulation KDP type electro-optical Q switch |
CN112421372B (en) * | 2020-12-30 | 2022-03-18 | 河南工程学院 | Transverse modulation KDP type electro-optical Q switch |
CN113488841A (en) * | 2021-07-12 | 2021-10-08 | 河南工程学院 | Low-voltage independent pressurization type electro-optical Q switch |
CN113488841B (en) * | 2021-07-12 | 2022-12-09 | 河南工程学院 | Low-voltage independent pressurization type electro-optical Q switch |
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