CN103166102A - Laser with low-voltage driven electro-optical crystal - Google Patents
Laser with low-voltage driven electro-optical crystal Download PDFInfo
- Publication number
- CN103166102A CN103166102A CN2013101200871A CN201310120087A CN103166102A CN 103166102 A CN103166102 A CN 103166102A CN 2013101200871 A CN2013101200871 A CN 2013101200871A CN 201310120087 A CN201310120087 A CN 201310120087A CN 103166102 A CN103166102 A CN 103166102A
- Authority
- CN
- China
- Prior art keywords
- laser
- electrooptic crystal
- crystal
- electro
- optical crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Lasers (AREA)
Abstract
The invention discloses a laser with a low-voltage driven electro-optical crystal. The laser is characterized by sequentially comprising a first cavity mirror, a gain medium, a polarizing film, an electro-optical crystal, a wave plate, a second cavity mirror and a driving power supply for the electro-optical crystal, which have the same optical axis, wherein the polarizing film forms a certain angle with the optical axis; and the two ends of the electro-optical crystal are connected with the adjustable driving power supply. The laser has the advantages that driving voltage to be applied to the electro-optical crystal is low, so that the manufacture difficulty and cost of the driving power supply for the electro-optical crystal are greatly lowered, and the stability and reliability of the laser are improved; and the polarization coupling output rate of the laser can be controlled by changing the driving voltage of the electro-optical crystal.
Description
Technical field
The invention belongs to laser technology field, be specifically related to a kind of laser of low voltage drive electrooptic crystal, can also control by the driving voltage that changes electrooptic crystal the polarization coupled output rating of laser simultaneously.
Background technology
Electro-optic Q switch is the electro optic effect of utilizing some crystal, realizes the adjusting of Q value in laserresonator.Electro-optic Q switch has that switching time is short, and efficient is high, transfers Q constantly can accurately control, and the Laser output pulse duration is narrow, and the peak power advantages of higher is a kind of Q-regulating technique of present extensive use.
Traditional electro-optical Q-switching laser generally uses polarizer, electrooptic crystal to be combined into Q switching.According to electric-optically Q-switched physical principle, generally need to add half-wave voltage or quarter-wave voltage to electrooptic crystal.As shown in figure one, typical longitudinal pressing is used the electro-optical Q-switching laser of crystal, and gain media (1-2) produces spontaneous radiation after the pumping optical pumping, and after selecting through polarizer (1-3), in the x-direction linearly polarized light will obtain positive feedback formation laser generation.If apply λ/4 voltages on crystal (1-4), due to longitudinal electro-optic effect, by after crystal (1-4), two components produce the phase difference of pi/2s, synthesize circularly polarized light after the crystal outgoing when in the x-direction linearly polarized light; (1-5) reflects through completely reflecting mirror, again by crystal (1-4), can produce the phase difference of pi/2 again, round trip produces the π phase difference altogether, and the linearly polarized light that obtains vibrating in the y-direction after synthesizing is mutually vertical with original polarization direction, so can't pass through polarizer (1-3), Q value in the chamber is very low at this moment, and namely Q switching is in closed condition, and laser generation can't form.When moment removes the voltage of crystal (1-4), laser is in high Q state of value immediately, the inverted population of chamber inner accumulated is set up rapidly vibration between saturating anti-mirror (1-1) and completely reflecting mirror (1-5), and obtains the giant pulse Laser output by saturating anti-mirror (1-1).As shown in Figure 1, the crystal λ of use/4 voltage representative values are to 3600 volts, and when using as Q switching the change in voltage General Requirements of driving power within 30 nanoseconds.The high voltage drive power supply of this high-speed switch realizes that cost and difficulty are all larger, particularly when switching frequency is also higher, as reaches tens even during the hundreds of KHz, and the complexity of its circuit is very high.High-voltage pulse easily produces electromagnetic radiation simultaneously, electronic devices and components is on every side formed disturb, and is unfavorable for the application of laser.And the reliability and stability of high pressure components and parts are well below similar low-voltage components and parts, and this is also a key factor that has a strong impact on laser application.Adopt the laterally electrooptic crystal of pressurization, generally can be by increasing the aspect ratio of electrooptic crystal, namely the ratio of the interelectrode distance of crystal and crystal length, obtain lower voltage, and is the most frequently used as LiNO
3Crystal.But the shortcoming that the method that adopts the increase aspect ratio to reduce half-wave voltage also has some to be difficult to overcome: at first, more large-sized crystal more is difficult to growth, and cost is higher; Secondly, single reduce interelectrode distance, although can obtain lower half-wave voltage, also limited clear aperature simultaneously.LiNO
3Crystal is commonly used is of a size of 9 * 9 * 25mm, and its λ/4 voltages have also reached 3200V.In addition, LiNO
3The damage threshold of crystal is also lower, only 300MW/cm
2The left and right is difficult to use in high power laser.And the electrooptic crystal of other types, its half-wave voltage is far above same size, LiNO
3Crystal.
In addition, laser shown in figure one coupling output rating is decided by the transmitance of saturating anti-mirror (1-1), its coupling output rating can only be generally fixed value, change the coupling output rating and just must change the saturating anti-mirror of different transmitances, can't accomplish to adjust the coupling output rating under the prerequisite of not changing the laser resonant cavity element.
Summary of the invention
The object of the invention is to overcome the above-mentioned shortcoming that is difficult to overcome, a kind of laser of low voltage drive electrooptic crystal is provided, characteristics are to utilize the change of polarization state in the chamber directly to carry out the modulation of Q value, do not need to reduce driving voltage by the size that changes crystal, and for general electrooptic crystal, comprise longitudinal pressing and laterally pressurize all being suitable for.And, under the prerequisite of not changing element in resonant cavity, can also change by the driving voltage that changes electrooptic crystal the coupling output rating of laser.
Technical solution of the present invention is as follows:
A kind of low voltage drive electrooptic crystal laser, characteristics are that its formation comprises the driving power of the first chamber mirror, gain media, polarizer, electrooptic crystal, wave plate, the second chamber mirror and the electrooptic crystal of same optical axis successively, described the first chamber mirror, gain media, polarizer, electrooptic crystal, wave plate, the second chamber mirror form laserresonator, described polarizer and optical axis are angled, and the two ends of described electrooptic crystal are connected with described adjustable driving power.
Described the first chamber mirror and the second chamber mirror are the combination of completely reflecting mirror, Porro prism or completely reflecting mirror and Porro prism.
Endovenous laser successively through polarizer, execute alive electrooptic crystal and wave plate after, again by wave plate and electrooptic crystal, the electrooptic crystal that utilizes pressurization changes the polarization state of laser by the second chamber mirror reflection, then exports by the polarization coupled that polarizer forms laser
In described laser, when not giving the electrooptic crystal making alive, in the chamber, photon forms linearly polarized light after by polarizer, pass through successively electrooptic crystal and wave plate, then pass through wave plate, electrooptic crystal, 90 ° of change of polarized direction by the second chamber mirror reflection, when again arriving polarizer, be reflected to outside resonant cavity, can't vibrate in the chamber forms positive feedback, thereby can't set up laser generation in the chamber.When the polarization state that is reflected back the laser of polarizer by the second chamber mirror was no longer the line polarisation of vertical former polarization direction, laser will partly pass through polarizer, formed vibration, and the part oscillation energy is by the polarizer output that is coupled simultaneously.So, only need to add a lower voltage (can lower than 1000V) to electrooptic crystal, form electro optic effect, the polarization state of laser is changed, it is no longer the line polarisation of vertical former polarization direction, just can form vibration and output, and need to not provide according to general method half-wave voltage or quarter-wave voltage.Due to electro optic effect, different voltage can access different polarization states, so can also regulate the coupling output rating according to the height of electrooptic crystal driving voltage.
Concrete advantage of the present invention is:
1. the driving voltage of required electrooptic crystal is low, thereby has reduced manufacture difficulty and the cost of electrooptic crystal driving power, has improved simultaneously stability and the useful life of driving power.
2. the present invention does not need to make especially electrooptic crystal, increases the size of crystal or recently reduces in length and breadth driving voltage, is applicable to all types of electrooptic crystals, has reduced internal loss, cost of manufacture and the difficulty of laser.
3. the present invention can regulate the coupling output rating of laser by the output voltage of controlling the electrooptic crystal drive circuit on the basis of not changing element in the chamber.
Description of drawings
Fig. 1 is the existing typical electro-optical Q-switching laser schematic diagram of vertically using crystal
Fig. 2 is the light path schematic diagram of the laser of low voltage drive electrooptic crystal of the present invention
Fig. 3 is the resolution chart that the coupling output rating of laser of the present invention changes with the electrooptic crystal driving voltage
Embodiment
The present invention will be further described below in conjunction with drawings and Examples, but should not limit protection scope of the present invention with this.
As shown in Figure 2, low voltage drive electrooptic crystal laser of the present invention, its formation comprises the driving power 2-7 of the first chamber mirror 2-1, gain media 2-2, polarizer 2-3, electrooptic crystal 2-4, wave plate 2-5, the second chamber mirror 2-6 and the electrooptic crystal of same optical axis successively, described the first chamber mirror 2-1, gain media 2-2, polarizer 2-3, electrooptic crystal 2-4, wave plate 2-5, the second chamber mirror 2-6 form laserresonator, described polarizer 2-3 and optical axis are angled, and the two ends of described electrooptic crystal 2-4 are connected with described adjustable driving power 2-7.
Laser is through polarizer 2-3, after electrooptic crystal 2-4 and wave plate 2-5, again pass through wave plate 2-5 and electrooptic crystal 2-4 by the second chamber mirror 2-6 reflection, come the polarization state of control chamber inner laser by electrooptic crystal 2-4, utilize the electrooptic crystal 2-4 under low-voltage to form depolarization, then by polarizer 2-3 coupling output.
As shown in Figure 2, when not giving the electrooptic crystal making alive, form the linearly polarized light that vibrates with plane of incidence parallel direction after laser process polarizer 2-3, through electrooptic crystal 2-4 and wave plate 2-5, again by the second chamber mirror 2-6 reflection, again by wave plate 2-5 and electrooptic crystal 2-4.Make by the laser after the second chamber mirror 2-6 reflection by rotating wave plate 2-5 and arrive the front direction of vibration of polarizer 2-3 with original mutually vertical through the direction of vibration after polarizer, this moment, laser was reflected away fully by polarizer 2-3, can't form vibration in resonant cavity, laser is output not.
In this laser, the vibration of laser is all to realize by the polarization state that changes laser with output.According to the character of electrooptic crystal, add certain voltage to electrooptic crystal, the index ellipsoid of electrooptic crystal changes, and the polarization state of the laser by electrooptic crystal changes thereupon.According to mentioned above, laser forms vibration just needs polarizer 2-3 to reflect fully, needs a part to pass through, and forms vibration.Adding certain voltage for this moment electrooptic crystal 2-4, changed by the polarization state before the laser arrival polarizer 2-3 after the second chamber mirror 2-6 reflection, is no longer linearly polarized light, so part is by polarizer 2-3, form vibration, part forms output by polarizer 2-3 reflection.Need not to be limited in half-wave voltage or quarter-wave voltage in general application for this moment the driving voltage of electrooptic crystal, only need to be able to set up the required threshold voltage of laser generation and get final product.
This laser is to utilize polarization coupled output, comes the polarization state of control chamber inner laser by electrooptic crystal 2-4.When the output voltage of electrooptic crystal drive circuit 2-7 changed, the polarization state by laser after electrooptic crystal changed, and the reflectivity of polarizer 2-3 changes thereupon, thereby has changed the polarization coupled output rating of laser.
Fig. 3 is the curve chart of the electrooptic crystal driving voltage that records and coupling output rating in experiment, and the electrooptic crystal that uses in experiment is, can obviously find out, change the output voltage of electrooptic crystal drive circuit, the coupling output rating of laser changes thereupon.During high coupling output rating, needed driving voltage than ordinary circumstance bend down many, when the output rating that for example is coupled was 70%, driving voltage was 1284V.It will be understood by those of skill in the art that the electrooptic crystal that can also use other materials, select simultaneously higher coupling output rating, the needed driving voltage of electrooptic crystal is also just lower.
Claims (2)
1. the laser of a low voltage drive electrooptic crystal, be characterised in that its formation comprises the first chamber mirror (2-1) of same optical axis successively, gain media (2-2), polarizer (2-3), electrooptic crystal (2-4), wave plate (2-5), the driving power (2-7) of the second chamber mirror (2-6) and electrooptic crystal, described the first chamber mirror (2-1), gain media (2-2), polarizer (2-3), electrooptic crystal (2-4), wave plate (2-5), the second chamber mirror (2-6) forms laserresonator, described polarizer (2-3) is angled with optical axis, the two ends of described electrooptic crystal (2-4) are connected with described adjustable driving power.
2. the laser of low voltage drive electrooptic crystal as claimed in claim 1, is characterized in that, described the first chamber mirror (2-1) and the second chamber mirror (2-6) are the combination of completely reflecting mirror, Porro prism or completely reflecting mirror and Porro prism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101200871A CN103166102A (en) | 2013-04-09 | 2013-04-09 | Laser with low-voltage driven electro-optical crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101200871A CN103166102A (en) | 2013-04-09 | 2013-04-09 | Laser with low-voltage driven electro-optical crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103166102A true CN103166102A (en) | 2013-06-19 |
Family
ID=48588953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101200871A Pending CN103166102A (en) | 2013-04-09 | 2013-04-09 | Laser with low-voltage driven electro-optical crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103166102A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108092127A (en) * | 2016-11-17 | 2018-05-29 | 中国航空工业集团公司北京航空制造工程研究所 | One kind moves back the electric-optically Q-switched structure of pressure type and Q-regulating method |
| CN109361147A (en) * | 2018-11-09 | 2019-02-19 | 山东大学 | A kind of methods and applications of lateral electro-optic Q switch and its reduction driving voltage based on trigonal system |
| CN110011177A (en) * | 2019-03-21 | 2019-07-12 | 北京遥测技术研究所 | A kind of electric light Radial Birefringent Q-switch |
| CN111142276A (en) * | 2019-05-10 | 2020-05-12 | 杭州奥创光子技术有限公司 | Double-mechanical shutter laser pulse train selection and power regulation device and working process thereof |
| CN113288418A (en) * | 2021-05-22 | 2021-08-24 | 中国科学院理化技术研究所 | Laser scalpel with tunable wavelength |
| CN113314934A (en) * | 2021-05-22 | 2021-08-27 | 中国科学院理化技术研究所 | Laser device with continuously adjustable output coupling ratio |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3757249A (en) * | 1972-02-15 | 1973-09-04 | Atomic Energy Commission | Q switched mode locked laser oscillator |
| US4959838A (en) * | 1989-05-31 | 1990-09-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method and circuit for shaping laser output pulses |
| CN102263365A (en) * | 2011-06-14 | 2011-11-30 | 常州第二电子仪器有限公司 | Semi-conductor pumping all-solid state high-power solid laser device |
-
2013
- 2013-04-09 CN CN2013101200871A patent/CN103166102A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3757249A (en) * | 1972-02-15 | 1973-09-04 | Atomic Energy Commission | Q switched mode locked laser oscillator |
| US4959838A (en) * | 1989-05-31 | 1990-09-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method and circuit for shaping laser output pulses |
| CN102263365A (en) * | 2011-06-14 | 2011-11-30 | 常州第二电子仪器有限公司 | Semi-conductor pumping all-solid state high-power solid laser device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108092127A (en) * | 2016-11-17 | 2018-05-29 | 中国航空工业集团公司北京航空制造工程研究所 | One kind moves back the electric-optically Q-switched structure of pressure type and Q-regulating method |
| CN108092127B (en) * | 2016-11-17 | 2020-09-08 | 中国航空制造技术研究院 | Voltage-reducing type electro-optical Q-switching structure and Q-switching method |
| CN109361147A (en) * | 2018-11-09 | 2019-02-19 | 山东大学 | A kind of methods and applications of lateral electro-optic Q switch and its reduction driving voltage based on trigonal system |
| CN110011177A (en) * | 2019-03-21 | 2019-07-12 | 北京遥测技术研究所 | A kind of electric light Radial Birefringent Q-switch |
| CN110011177B (en) * | 2019-03-21 | 2020-06-09 | 北京遥测技术研究所 | Electro-optical radial birefringence Q-switch |
| CN111142276A (en) * | 2019-05-10 | 2020-05-12 | 杭州奥创光子技术有限公司 | Double-mechanical shutter laser pulse train selection and power regulation device and working process thereof |
| CN113288418A (en) * | 2021-05-22 | 2021-08-24 | 中国科学院理化技术研究所 | Laser scalpel with tunable wavelength |
| CN113314934A (en) * | 2021-05-22 | 2021-08-27 | 中国科学院理化技术研究所 | Laser device with continuously adjustable output coupling ratio |
| CN113314934B (en) * | 2021-05-22 | 2022-06-24 | 中国科学院理化技术研究所 | Laser device with continuously adjustable output coupling ratio |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103166102A (en) | Laser with low-voltage driven electro-optical crystal | |
| CN201853942U (en) | Electro-optic Q-switched solid-state laser with variable pulse width | |
| CN105244744B (en) | A kind of light comb system that the control of bandwidth carrier envelope offset frequency is realized using electro-optic crystal | |
| CN103779776B (en) | Seed injection single-frequency pulse laser based on tunable cavity length of electro-optical crystal | |
| CN100451730C (en) | Beam splitting device and beam splitting method for linear polarization laser double pulses with adjustable pulse intervals | |
| CN100364186C (en) | External cavity electrically controlled laser wavelength code input method and biwavelength laser module thereof | |
| CN108767650B (en) | Function composite electro-optical Q switch | |
| CN109462138A (en) | A kind of Gao Zhongying short pulse infrared laser | |
| US6859467B2 (en) | Electro-optic modulator material | |
| CN101834400B (en) | Folding cavity-dumping electro-optic Q-switch laser resonant cavity | |
| CN104659645A (en) | RTP electrooptical modulating Q airflow hydrogen fluoride laser | |
| CN102299469A (en) | Laser for realizing subnanosecond Q-modulated output by controlling pump light characteristic | |
| US7068688B2 (en) | Electro-optic Q-switch | |
| CN101304150A (en) | Structure of micro-slice type electro-optical Q-switching laser | |
| CN102723661B (en) | Electro-optic Q-switching and acousto-optic Q-switching pulse laser capable of quickly converting Q-switching modes | |
| CN102723660B (en) | Electro-optic Q-switched pulse laser device with repeat frequency being variable in wide range | |
| CN107706733B (en) | Method for generating subnanosecond pulse laser | |
| CN110086071A (en) | A kind of controllable output method of dual-wavelength laser and laser | |
| CN105720476A (en) | High peak narrow pulse laser based on sudden rise of laser gain | |
| CN110932070B (en) | Dual-wavelength alternating Q-switching narrow pulse laser and output method | |
| CN110932081B (en) | Electro-optically Q-switched dual-wavelength laser alternate coaxial output method and laser | |
| CN110932069B (en) | Ultrahigh repetition frequency narrow pulse single-wavelength alternate Q-switched laser output method and laser | |
| CN116191192A (en) | Laser with switchable Q-switching mode | |
| CN201726032U (en) | High-repeating-frequency subnanosecond pulse width electro-optical Q-switching laser | |
| CN102157897A (en) | Pulse width-adjustable solid laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130619 |