CN108766916A - Ion implanting runs sheet devices and ion implanting runs piece method - Google Patents
Ion implanting runs sheet devices and ion implanting runs piece method Download PDFInfo
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- CN108766916A CN108766916A CN201810398127.1A CN201810398127A CN108766916A CN 108766916 A CN108766916 A CN 108766916A CN 201810398127 A CN201810398127 A CN 201810398127A CN 108766916 A CN108766916 A CN 108766916A
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- 238000000034 method Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 200
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 200
- 239000010703 silicon Substances 0.000 claims abstract description 199
- 238000005192 partition Methods 0.000 claims abstract description 93
- 230000005571 horizontal transmission Effects 0.000 claims abstract description 63
- 230000003139 buffering effect Effects 0.000 claims abstract description 48
- 238000003860 storage Methods 0.000 claims abstract description 38
- 239000007924 injection Substances 0.000 claims abstract description 21
- 238000002347 injection Methods 0.000 claims abstract description 20
- 230000032258 transport Effects 0.000 claims description 104
- 230000005540 biological transmission Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 30
- 230000007246 mechanism Effects 0.000 claims description 25
- 230000007306 turnover Effects 0.000 claims description 23
- 230000000694 effects Effects 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 3
- 230000005389 magnetism Effects 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 abstract description 6
- 150000002500 ions Chemical class 0.000 description 230
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 230000001360 synchronised effect Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Sheet devices are run the invention discloses ion implanting and ion implanting runs piece method.It includes that horizontal disengaging transmits area, vertical transport buffering area, single horizontal transmission area and vertical transport storage area that the ion implanting, which runs sheet devices,.Ion implanting is run piece method and is included the following steps：Silicon chip is placed in the lower section of tray upper spacer, wherein one is discharged to the first position of sub- injection hole face silicon chip；Pallet is transported in a vacuum chamber, in the vacuum chamber at transport pallet to the first ion；First ion is injected into the first position of silicon chip by the first row ion implanting hole of partition board；The relatively described pallet shift position of partition board, so that the second position of second row ion implanting hole face silicon chip；Second ion is injected into the second position of silicon chip by the second row ion implanting hole of partition board；Pallet is removed into the vacuum chamber.Ion implanting of the present invention runs sheet devices, ion implanting easily and fast, Si wafer quality at low cost, making it is good.
Description
Technical field
The present invention relates to silicon solar cell preparing technical fields, and in particular to ion implanting runs sheet devices and ion implanting
Run piece method.
Background technology
Silicon solar cell is produced electricl energy when being exposed to the solar radiation from the sun.The radiation is interacted with silicon atom
Electrons and holes are acted on and are formed, the electrons and holes move to the ion doped regions p and the ion doped regions n in silicon body,
And voltage difference and electric current are generated between doped region.Depending on purposes, solar cell is integrated to improve with lumped elements
Efficiency.Solar radiation guides the lumped elements to one or more parts of active photovoltaic materials to accumulate using by the radiation
And focusing.Although effectively, these solar cells still have many limitations.
As just an example, solar cell relies on the starting material of such as silicon.This silicon is usually using polysilicon
(i.e. the silicon of polycrystal) and/or polycrystalline silicon material are made.These materials are generally difficult to manufacture.Polycrystal silicon cell usually passes through manufacture
Polysilicon films are formed.Although these plates can be effectively formed, they do not have the optimality of high performance solar batteries
Energy.Monocrystalline silicon has the proper property of advanced solar cell.However, this monocrystalline silicon is expensive, also it is difficult to according to efficient
And cost-effective mode is used for solar use.In addition, polycrystalline silicon material and single crystal silicon material are equal in conventional fabrication process
By the material loss for being known as " kerf loss ", wherein for casting or growth crystal ingot and material monolithic is melted into wafer format
Factor, sawing process eliminate starting material up to 40% even up to 60%.This is prepared as the thin of solar cell
The very inefficient method of polysilicon or monocrystalline silicon plate.
In general, thin-film solar cells is that price is less expensive, but theirs is non-by using less silicon materials
Brilliant or polycrystalline structure is less efficient compared with knocking body silicon more expensive made of substrate polycrystalline.
Invention content
Based on this, it is necessary to provide a kind of ion implantings by the present invention easily and fast, Si wafer quality at low cost, making is good
Ion implanting run sheet devices.
The present invention also provides a kind of ion implantings to run piece method.
In order to achieve the object of the present invention, the present invention uses following technical scheme：
A kind of ion implanting race sheet devices comprising：
Level disengaging transmission area, the horizontal transmission area that passes in and out is for the horizontal pallet for transporting loading silicon chip, the pallet
Equipped with several sliding rails disposed in parallel and a partition board, the partition board is slidably connected several sliding rails to be moved along the sliding rail,
Two rows of ion implanting holes are offered on the partition board, the position in two rows of ion implanting holes, which intersects, to be staggered, the partition board
Width be less than the pallet width, the silicon chip be set to the pallet on the partition board lower section；Partition board when initial
First row described in ion implanting hole correspond to the first position of the silicon chip；Vertical transport buffering area, the vertical transport buffering
Area's connection horizontal disengaging transmission area, the vertical transport buffering area for transporting the pallet vertically upward or downwards；
Single horizontal transmission area, the single horizontal transmission area are connected to the vertical transport buffering area, the single level
Transmission area is for successively transporting multiple pallets；The single horizontal transmission area has the first ion implanting station, cuts successively
Position of silicon wafer station and the second ion implanting station are changed, the first ion implanting station is used in the first position of the silicon chip
The first ion is injected, the switching position of silicon wafer station is for moving the partition board so that ion described in the second row of the partition board
Injection hole corresponds to the second position of the silicon chip, and the second ion implanting station is used to inject in the second position of the silicon chip
Second ion, the second position are different from the first position；Relatively described second ion of first ion implanting station
Inject the closer vertical transport buffering area of station；
Vertical transport storage area, the vertical transport storage area are connected to the single horizontal transmission area, for vertically upward
Or the pallet is transported downwards；
Vacuum generator, the vacuum generator are used for the horizontal disengaging transmission area, vertical transport buffering area and hang down
Straight conveying storage area vacuumizes.
Above-mentioned ion implanting runs sheet devices, and by the way of ion input, the ion for controlling single type injects one by one
On silicon chip, the better of ion implanting can be made by adjusting the ion implanting amount of ion implantation device and injecting environment；It adopts
It is injected with the mode of assembly line, reduces cost of manufacture；And after the completion of a kind of ion implanting, the note of second ion is easily cut
Enter position, carry out the injection of second ion so that the whole process time is reduced, and improves preparation efficiency.
In some of embodiments, the dislocation distance in two rows of ion implanting holes is 10 μm -250 μm.
In some of embodiments, it further includes one described on the pallet for overturning that the ion implanting, which runs sheet devices,
The silicon wafer turnover mechanism of silicon chip, the single horizontal transmission area also have silicon wafer turnover station and third ion implanting station, institute
State one side of the third ion implanting station for silicon chip described in third ion implanting to be had to first ion and the second ion
Opposite another side.
In some of embodiments, the silicon wafer turnover mechanism includes that operating substrate and swivel plate, the operating substrate are opened
Set on the substrate cavity for being corresponding with the swivel plate, the swivel plate is equipped with the shaft along the operating substrate rotation, the rotation
Flap offers swivel plate cavity, and the swivel plate has the first face and second face opposite with first face；The pallet
Including upper disk and lower wall, the upper disk activity connects the first face of the swivel plate and the corresponding swivel plate, is vitalized under described
Second face of the dynamic connection swivel plate and the corresponding swivel plate, the upper disk offer disk silicon chip chamber, and the lower wall is opened
Equipped with lower wall silicon chip chamber, the gap between the upper disk and the lower wall is not less than the thickness of the silicon chip, the side of the silicon chip
Edge is located in the edge of the upper disk and the lower wall, and the sliding rail is set to the upper disk with the partition board.
In some of embodiments, the single horizontal transmission area has two groups of horizontal conveying belts, horizontal described in two groups to pass
Send band between have pre-determined distance, it is described operating substrate edge be respectively arranged on two groups described in horizontal transmission take so that described
Horizontal conveying belt drives the silicon wafer turnover mechanism and the silicon chip shift position.
In some of embodiments, multiple mutually isolated substrate cavities are offered in the operating substrate, it is each
The substrate cavity corresponds to a swivel plate, and the multiple swivel plates being located on same line connect a shaft.
In some of embodiments, the first face of the swivel plate corresponds to the opposite sides difference of the swivel plate cavity
One first card slot is offered, the first magnet is equipped in first card slot；Second face of the swivel plate corresponds to the rotation
The opposite sides of plate cavity offers one second card slot respectively, and the second magnet is equipped in second card slot；The upper disk corresponds to
The position of first card slot is equipped with one first card convex, and the position that the lower wall corresponds to second card slot is equipped with one second card
Convex, first card convex is made with second card convex of magnetic material, and first card convex is located in first card slot
And mutually magnetic connection, second card convex is located in second card slot and mutually magnetic connection.
In some of embodiments, the middle part of the upper disk is equipped with the first lug boss, and the middle part of the lower wall is equipped with second
Lug boss, after the upper disk is flexibly connected the swivel plate with the lower wall, first lug boss and second lug boss
In the embedded swivel plate cavity.
In some of embodiments, the silicon wafer turnover station be located at the second ion implanting station with it is described vertical defeated
Between sending storage area, the third ion implanting station be located at the silicon wafer turnover station and the vertical transport storage area it
Between.
In some of embodiments, the third ion implanting station is located at the vertical transport buffering area and described first
Between ion implanting station, the silicon wafer turnover station is located at the third ion implanting station and the first ion implanting work
Between position.
The present invention also provides a kind of ion implantings to run piece method comprising following steps：
A pallet is provided, the pallet is flexibly connected a partition board, two rows of ion implanting holes, Liang Paisuo are opened up on the partition board
The position for stating ion implanting hole intersects and is staggered；
The silicon chip is placed in the lower section of the partition board on tray, wherein silicon chip described in ion implanting hole face described in a row
First position；
The pallet is transported in a vacuum chamber, in the vacuum chamber at transport pallet to the first ion；
First ion is injected into the first position of the silicon chip by the first row ion implanting hole of the partition board；
The relatively described pallet shift position of the partition board, so that of silicon chip described in ion implanting hole face described in second row
Two positions；
Second ion is injected into the second position of the silicon chip by the second row ion implanting hole of the partition board；
The pallet is removed into the vacuum chamber.
It is described that second ion is injected into institute by the second row ion implanting hole of the partition board in some of embodiments
After the step of stating the second position of silicon chip, also there are following steps：The pallet is overturn to overturn the silicon chip, by third from
Son is injected into the silicon chip with first ion another side opposite with the one side of the second ion.
In some of embodiments, the step：The pallet is transported in a vacuum chamber and is passed through with by the first ion
The first row ion implanting hole of the partition board is injected between the first position of the silicon chip, also has following steps：By third
In ion implanting to the silicon chip, then the pallet is overturn to overturn the silicon chip.
The present invention also provides a kind of ion implantings to run piece method comprising following steps：
Ion implanting is provided and runs sheet devices and pallet, the offer ion implanting runs sheet devices and includes：Level disengaging transmission
Area, the horizontal disengaging transmission area transport the pallet for loading silicon chip for level；Vertical transport buffering area, the vertical transport are slow
Area's connection horizontal disengaging transmission area is rushed, the vertical transport buffering area for transporting the pallet vertically upward or downwards；
Single horizontal transmission area, the single horizontal transmission area are connected to the vertical transport buffering area, and the single horizontal transmission area uses
In successively transporting multiple pallets；The single horizontal transmission area has the first ion implanting station, switching silicon chip position successively
Station and the second ion implanting station are set, the first ion implanting station is used to inject first in the first position of the silicon chip
Ion, the switching position of silicon wafer station are used to switch the position of the silicon chip, and the second ion implanting station is used in institute
The second ion is injected in the second position for stating silicon chip, and the second position is different from the first position；First ion implanting
The closer vertical transport buffering area of the relatively described second ion implanting station of station；Vertical transport storage area, it is described vertical
It conveys storage area and is connected to the single horizontal transmission area, for transporting the pallet vertically upward or downwards；Vacuum generator, institute
Vacuum generator is stated for being vacuumized to the horizontal disengaging transmission area, vertical transport buffering area and vertical transport storage area；Institute
Vacuum generator unlatching to be stated to vacuumize, the pallet is flexibly connected a partition board, opens up two rows of ion implanting holes on the partition board, and two
The position for arranging the ion implanting hole intersects and is staggered；
The silicon chip is placed in the lower section of the partition board on tray, wherein silicon chip described in ion implanting hole face described in a row
First position；
Multiple pallets are put to level and pass in and out transmission area, the horizontal disengaging transmission area transports multiple pallets
To the vertical transport buffering area, the vertical transport buffering area transports multiple pallets, multiple pallets vertically downward
Successively enter the single horizontal transmission area；
The single horizontal transmission area successively transports multiple pallets to the first ion implanting station, by first from
Son is injected into the first position of the silicon chip by the first row ion implanting hole of the partition board；
The single horizontal transmission area successively transports multiple pallets to the switching position of silicon wafer station, will described in every
The relatively described pallet shift position of plate, so that the second position of silicon chip described in ion implanting hole face described in second row；
The single horizontal transmission area successively transports multiple pallets to the second ion implanting station, by second from
Son is injected into the second position of the silicon chip by the second row ion implanting hole of the partition board；
The single horizontal transmission area successively transports multiple pallets to the vertical transport storage area, described vertical defeated
It send storage area to transport the pallet upwards, then removes the ion implanting and run sheet devices.
Description of the drawings
Fig. 1 is the structural schematic diagram that ion implanting of the present invention runs the silicon chip that piece method makes；
Fig. 2 is the structural schematic diagram that ion implanting described in one embodiment of the invention runs sheet devices；
Fig. 3 is the structural schematic diagram that ion implanting described in another embodiment of the present invention runs sheet devices；
Fig. 4 is the structural schematic diagram that ion implanting described in another embodiment of the present invention runs sheet devices；
Fig. 5 is the schematic diagram that ion implanting described in one embodiment of the invention runs piece method；
Fig. 6 is the schematic diagram that ion implanting described in another embodiment of the present invention runs piece method；
Fig. 7 is the tray structure diagram that ion implanting described in Fig. 1 runs sheet devices；
Fig. 8 is that the operating substrate for the switching mechanism that ion implanting described in one embodiment of the invention runs sheet devices and swivel plate are matched
The vertical view of conjunction；
Fig. 9 is the vertical view of the operating substrate of switching mechanism described in Fig. 8；
Figure 10 is the side structure schematic diagram of the swivel plate of switching mechanism described in Fig. 8；
Figure 11 is the structural schematic diagram of the pallet of switching mechanism described in Fig. 8；
Figure 12 is that the swivel plate of switching mechanism described in Fig. 8 clamps the side structure schematic diagram of silicon chip with pallet cooperation；
Figure 13 is the overall structure figure that ion implanting described in Fig. 2 runs sheet devices；
Figure 14 is horizontal disengaging transmission area's external structure that ion implanting described in Figure 13 runs sheet devices；
Figure 15 is horizontal disengaging transmission area's internal structure chart that ion implanting described in Figure 13 runs sheet devices；
Figure 16 is the vertical transport buffering area external structure that ion implanting described in Fig. 1 runs sheet devices；
Figure 17 is the vertical transport buffering area internal structure chart that ion implanting described in Fig. 1 runs sheet devices；
Figure 18 is the single horizontal transmission area internal structure chart that ion implanting described in Fig. 1 runs sheet devices；
Figure 19 is the vertical transport storage area external structure that ion implanting described in Fig. 1 runs sheet devices；
Figure 20 is the vertical transport storage area internal structure chart that ion implanting described in Fig. 1 runs sheet devices.
Specific implementation mode
To facilitate the understanding of the present invention, below with reference to relevant drawings to invention is more fully described.In attached drawing
Give presently preferred embodiments of the present invention.But the present invention can realize in many different forms, however it is not limited to this paper institutes
The embodiment of description.Keep the understanding to the disclosure more thorough on the contrary, purpose of providing these embodiments is
Comprehensively.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.
Embodiment
The present invention provides a kind of ion implanting race sheet devices 100, for injecting ion on silicon chip.
Fig. 2 to Fig. 6 and Figure 13 is please referred to, ion implanting is a preferred embodiment of the present invention and runs sheet devices 100, including water
Flat disengaging transmission area 10, vertical transport buffering area 20, single horizontal transmission area 30, vertical transport storage area 40 and vacuum occur
Device, level disengaging transmission area 10 are set to the top in single horizontal transmission area 30, vertical transport buffering area 20 be respectively communicated with it is horizontal into
Go out to transmit area 10 and single horizontal transmission area 30, single horizontal transmission area 30 is connected to vertical transport storage area 40.Level disengaging passes
Send area 10 that there is horizontally disposed first conveyer belt, for the horizontal pallet for transporting multilayer and loading silicon chip, i.e., by multiple loading silicon
The pallet of piece is put into horizontal disengaging transmission area 10, is then delivered to vertical transport buffering area 20 again.Vertical transport buffering area 20 has
There is the second vertical conveyer belt, multiple layer tray setting up and down can be in layers delivered to the single horizontal transmission area of lower section
30.There is horizontal conveying belt, horizontal conveying belt to convey one layer of pallet, inject ions into therein multiple in single horizontal transmission area 30
On silicon chip.Then multiple layer tray is stacked and sends out the device again by 20 priority of vertical transport buffering area.Vacuum generator be it is horizontal into
Go out to transmit area 10, vertical transport buffering area 20, single horizontal transmission area 30 and vertical transport storage area 40 to vacuumize.
Silicon chip 60 is placed on pallet 50, and pallet 50 is pushed into horizontal disengaging transmission area 10, support simultaneously by the cart of a foot wheel
Disk 50 transmits area 10, vertical transport buffering area 20, single horizontal transmission area 30 and vertical transport storage by horizontal disengaging successively
Area 40, the silicon chip 60 on pallet 50 carry out ion implanting in single horizontal transmission area 30, then pass through vertical transport storage area 40
Outside is transferred out, the silicon chip 60 on pallet 50 carries out the injection of two kinds of ions in single horizontal transmission area 30.
Fig. 7 is please referred to, the position of silicon chip is answered for ease of switching ion pair, the position of silicon chip 60 is not active in whole process,
Pallet 50 is equipped with several 501 and one partition boards 502 of sliding rail disposed in parallel, and partition board 502 is slidably connected several sliding rails 501 with along sliding rail
501 move, and two rows of ion implanting holes 520 are offered on partition board 502, and the position in two rows of ion implanting holes 520, which intersects, to be staggered,
The dislocation distance in two rows of ion implanting holes 520 is 10 μm -250 μm, i.e., wherein one is discharged to an ion implanting of sub- injection hole 521
The right side in hole 521 is discharged to one of sub- injection hole 522 ion implanting hole to adjacent with above-mentioned ion implanting hole other one
Distance be 10 μm -250 μm, preferably 20 μm.The width of partition board be less than pallet 50 width, silicon chip 60 be set to pallet 50 on every
The lower section of plate 502；The first row ion implanting hole 521 of partition board 502 corresponds to the surface of silicon chip when initial, and the first ion implanting is complete
Cheng Hou, partition board 502 are moved along sliding rail 501, and the second row ion implanting hole 522 of partition board 502 corresponds to the surface of silicon chip.Silicon chip 60
First position correspond to the first row ion implanting hole 521 of partition board 502, the second position of silicon chip 60 corresponds to the second of partition board 502
It is discharged to sub- injection hole 522, the second position is different from first position；First ion implanting station with respect to the second ion implanting station compared with
Close to vertical transport buffering area, i.e., after first injecting the first ion, reinject the second ion.It can be easily by silicon chip using the pallet
Injection phase be switched to the second position from first position.
Figure 14 and Figure 15 are please referred to, level disengaging transmission is equipped with the parallel first conveyer belt 11 of N items or more in area 10, each
One pallet can be installed in first conveyer belt 11.Level disengaging transmission 10 side of area is equipped with the first electromagnetic clutch 12, the first electricity
Magnet clutch 12 controls first conveyer belt 11 and adjusts spacing, and after the pallet 50 in first conveyer belt 11 is all on board, N items first are defeated
Band 11 is sent to start to convey pallet 50, if there is the pallet 50 of wherein one first conveyer belt 11 is no in place, other several first
Conveyer belt 11 can not convey pallet 50.
Please refer to Figure 16 and Figure 17, area 10 and remote is transmitted in the front and rear sides of vertical transport buffering area 20 close to horizontal disengaging
It is equipped with the second electromagnetic clutch 21 from the horizontal side for passing in and out transmission area 10, in vertical transport buffering area 20 on front-rear side walls point
Not She You the special-shaped synchronous belt vertical transportation agencies 23 of N pallet buffer pipeline 22 and two, special-shaped synchronous belt vertical conveyor
There is synchronous belt 231 on structure 23, multiple taking-ups of pallet 50 by pallet buffer pipeline 22 are equipped at intervals on synchronous belt 231 and are sent
Enter the feeding piece 24 in single horizontal transmission area 30, the second electromagnetic clutch 21 be used to adjust N pallet buffer pipeline 22 away from
From；The front and rear sides of vertical transport buffering area 20 are equipped with retraction interference mechanism, and retraction interference mechanism has interference bar, abnormity same
When step takes the pallet 50 on pallet buffer pipeline 22 with vertical transportation agency 23, retraction interference mechanism control interference bar is retracted；
The bottom of pallet buffer pipeline 22 is equipped with the first water being pushed into the pallet 50 on feeding piece 24 in single horizontal transmission area 30
Flat pusher cylinder 25.
Figure 18 is please referred to, single horizontal transmission area 30 is equipped with two groups of horizontal conveying belts 31, and two groups of horizontal conveying belts 31 are in the same direction
Transmission and between there is pre-determined distance so that single 30 intermediate hollow out of horizontal transmission area, the first ion implanting station 32, second from
Son injection station 34 is respectively positioned between two groups of horizontal conveying belts 31, facilitates injection ion.Single horizontal transmission area 30 is passed along level
Send the direction of transfer of band 31 that there is the first ion implanting station 32, switching position of silicon wafer station 33 and the second ion implanting work successively
Position 34, the first ion implanting station 32 are used to inject the first ion in the first position of silicon chip, and switching position of silicon wafer station 33 is used
In mobile dividing plate 502, so that the second row ion implanting hole 520 of partition board 502 corresponds to the second position of silicon chip 60, the second ion note
Enter station 34 for injecting the second ion in the second position of silicon chip.For example, above-mentioned ion is n ﹢ types ions or p ﹢ type ions, example
Such as, the first ion is n ﹢ type ions, then the second ion is p ﹢ type ions；For another example the first ion is p ﹢ type ions, the second ion
It is n ﹢ type ions.After the completion of the first ion implanting station 32 injects the first ion, 502 sliding position of partition board.Single horizontal
It transmits area 30 and is equipped with partition board hole switching mechanism, which pushes partition board 502 to be moved along sliding rail 501, work as pallet
After 50 reach switching position of silicon wafer station 33, the action of partition board hole switching mechanism.
Since position is limited, Figure 18 merely illustrates the part in single horizontal transmission area 30.
First ion implanting station 32, the second ion implanting station 34 are arranged right below Faraday cup 36, are respectively used to
Collect the first ion and the second ion.
Further, it further includes an induction for being set to switching position of silicon wafer station 33 that above-mentioned ion implanting, which runs sheet devices 100,
Device and the controller for being electrically connected inductor, inductor are used to incude the pallet 50 of switching position of silicon wafer station 33, and controller is used
Partition board 502 is pushed to be moved along sliding rail 501 in the signal control partition board hole switching mechanism sent according to inductor.When inductor incudes
When there is pallet 50 to switching position of silicon wafer station 33, controller is sent a signal to, controller control partition board hole switching mechanism is opened
Initiating is made, and partition board 502 is pushed to move.More delicately the opportunity for overturning silicon chip is controlled using inductor and controller,
Improve the accuracy made.
To enable the ion implanting to run the continuous progress ion implanting of sheet devices 100, such as the another side in silicon chip 60
On be also injected into ion, which runs the silicon wafer turnover machine that sheet devices 100 further include silicon chip 60 on reversible tray 50
Structure 70, accordingly, single horizontal transmission area 30 also have silicon wafer turnover station 35 and third ion implanting station 36, third from
The another side that son injection station 36 is used to have the first ion opposite with the one side of the second ion third Implanted Silicon Wafer 60.
Wherein there are two types of settings for the position of silicon wafer turnover station 35：
Fig. 3 is please referred to, one is silicon wafer turnover station 35, which is set to, is located at 34 station of the second ion implanting and vertical transport storage
Between depositing area 40, third ion implanting station 36 is between silicon wafer turnover station 35 and vertical transport storage area 40, i.e. silicon chip
Station turning 35 is sequentially disposed at the second ion implanting 34 along 31 direction of transfer of horizontal conveying belt with third ion implanting station 36
The front of station has been injected and has overturn silicon chip 60 after the second ion again, injects third ion in the one side of silicon chip.
Fig. 4 is please referred to, another is, third ion implanting station 36 is located at vertical transport buffering area 20 and the first ion
It injects between station 32, silicon wafer turnover station 35 is located between third ion implanting station 36 and the first ion implanting station 32.
I.e. third ion implanting station 36 is sequentially disposed at the second ion along 31 direction of transfer of horizontal conveying belt with silicon wafer turnover station 35
The rear of 34 stations is injected, after first injecting third ion, then silicon chip 60 is inverted, reinjects the first ion and the second ion.
Third ion implanting station 36 is arranged right below Faraday cup, for collecting third ion.
Fig. 8 to Figure 12 is please referred to, silicon wafer turnover mechanism 70 therein includes operating substrate 71 and swivel plate 72, operates substrate
71 edge is respectively arranged on two groups of horizontal conveying belts 31, so that horizontal conveying belt 31 drives silicon wafer turnover mechanism 70 and silicon chip 60
Shift position.Operating substrate 71 offers the substrate cavity 711 corresponding to swivel plate 72, and swivel plate 72 is equipped with along operating substrate 71
The shaft 721 of rotation, swivel plate 72 offer swivel plate cavity 722, and swivel plate 72 has the first face and opposite with the first face
Second face, swivel plate 72 drive rotation, shaft 721 in substrate cavity 711 that can be rotated by drivings such as motors by shaft 721, when
When needing to switch station, motor-driven rotatable shaft 721 rotates 180 degree.Pallet 50 includes upper disk 51 and lower wall 52, and 51 activity of upper disk is even
The first face of swivel plate 72 and corresponding swivel plate 72 is connect, lower wall 52 is flexibly connected the second of swivel plate 72 and corresponding swivel plate 72
Face, upper disk 51 offer disk silicon chip chamber 511, and lower wall 52 offers lower wall silicon chip chamber 521, between upper disk 51 and lower wall 52 between
Gap is not less than the thickness of silicon chip 60, and the edge of silicon chip 60 is located in the edge of disk 51 and lower wall 52, and such ion includes first
Ion, the second ion and third ion pass sequentially through substrate cavity 711, swivel plate cavity 722 and upper disk silicon chip chamber 511 or lower wall
Silicon chip chamber 521 is injected on silicon chip 60.Sliding rail 501 and partition board 502 is arranged in upper disk 51, in the first position of silicon chip 60 and the
Switch between two positions, and lower wall 52 does not have to setting partition board and sliding rail, because in the whole face of third ion implanting to silicon chip 60.
Fig. 8 and Fig. 9 are please referred to, to enable the more pallets 50 of operating substrate support and silicon chip 60, is operated in substrate 71
Multiple mutually isolated substrate cavities 711 are offered, each substrate cavity 711 corresponds to a swivel plate 72, is located on same line
Multiple swivel plates 72 connect a shaft 721, when a shaft 721 rotates, multiple swivel plates 72 can be driven to overturn 180 degree,
Multiple swivel plates 72 drive multiple pallets 50 to overturn 180 degree, and then multiple silicon chips 60 overturn 180 degree.
Figure 10 to Figure 12 is please referred to, pallet 50 and the connection type of swivel plate 72 are, for example,：The first of swivel plate 72 faces
One first card slot 723 should be offered respectively in the opposite sides of swivel plate cavity 721, the first magnet is equipped in the first card slot 723；
The opposite sides that second face of swivel plate 72 corresponds to swivel plate cavity 721 offers one second card slot 724, the second card slot respectively
Inside it is equipped with the second magnet；The position that upper disk 51 corresponds to the first card slot 723 is equipped with one first card convex 512, and lower wall 52 corresponds to the second card
The position of slot 724 is equipped with one second card convex 522, and the first card convex 512 is made with the second card convex 522 of magnetic material, and such the
One card convex 512 is located in the first card slot 723 and mutually magnetic connection, and the second card convex 522 is located in the second card slot 724 and mutual magnetic
Property connection, achieve the effect that flexible connection.
Figure 11 is please referred to, to make the structure of pallet 50 more preferably coordinate with swivel plate 72, more securely clamps silicon chip 60, pallet
The middle part of disk 51 is equipped with the first lug boss 53 on 50, and the middle part of lower wall 52 is equipped with the second lug boss 54, and upper disk 51 is lived with lower wall 52
After dynamic connection swivel plate 72, in 54 embedded rotating plate cavity 722 of the first lug boss 53 and the second lug boss.First lug boss 53 with
The hollow setting of second lug boss 54, to form upper disk silicon chip chamber 511 or lower wall silicon chip chamber 521, the edge of silicon chip 60 is clipped in the
At one lug boss 53 and the second lug boss 54.
When needing to overturn silicon chip, shaft 721 rotates under the driving of motor, and driving pallet 50 to overturn 180 degree can incite somebody to action
Silicon chip 60 overturns 180 degree.
Certainly, above-mentioned silicon wafer turnover mechanism 70 can also have other set-up modes, be not limited to above structure, as long as can
Realize the effect of overturning silicon chip 60.
Please refer to Figure 19 and Figure 20, vertical transport storage area 40 is connected to single horizontal transmission area 30, for vertically upward or
Downward transport pallet 50.40 structure of vertical transport storage area is specifically：On the front side wall and madial wall of vertical transport storage area 40
It is equipped with the vertical material fetching mechanism 41 of special-shaped synchronous belt, the bottom of vertical transport storage area 40 is equipped with defeated by single horizontal transmission area 30
Second horizontal pusher cylinder 42 of the vertical material fetching mechanism of the special-shaped synchronous belt of the horizontal push-in of pallet 50 that send 41, vertical transport storage area
40 top, which is equipped with, pushes the pallet 50 on the vertical material fetching mechanism of special-shaped synchronous belt 41 to the external horizontal pusher cylinder of third (figure
Do not show).
Alternatively, the function of vertical transport storage area 40 with 20 function of vertical transport buffering area on the contrary, the two internal structure is anti-
To setting.
Embodiment one
Fig. 5 is please referred to, the present invention also provides a kind of ion implantings to run piece method, includes the following steps：
A pallet is provided, pallet is flexibly connected a partition board, two rows of ion implanting holes, two rows of ion implanting holes are opened up on partition board
Position intersect and be staggered；
The lower section that silicon chip is placed in tray upper spacer is clipped between upper disk 51 and lower wall 52, wherein one is discharged to sub- injection hole
The first position of face silicon chip；
Pallet is transported in a vacuum chamber, in the vacuum chamber at transport pallet to the first ion；
First ion is injected into the first position of silicon chip by the first row ion implanting hole of partition board；
By partition board opposing tray shift position, so that the second position of second row ion implanting hole face silicon chip；
Second ion is injected into the second position of silicon chip by the second row ion implanting hole of partition board；
Pallet is removed into vacuum chamber.
Embodiment two
Fig. 6 is please referred to, further, the present invention also provides a kind of ion implantings to run piece method, includes the following steps：
A pallet is provided, pallet is flexibly connected a partition board, two rows of ion implanting holes, two rows of ion implanting holes are opened up on partition board
Position intersect and be staggered；
Silicon chip is placed in the lower section of tray upper spacer, wherein one is discharged to the first position of sub- injection hole face silicon chip；
Pallet is transported in a vacuum chamber, in the vacuum chamber at transport pallet to the first ion；
First ion is injected into the first position of silicon chip by the first row ion implanting hole of partition board；
By partition board opposing tray shift position, so that the second position of second row ion implanting hole face silicon chip；
Second ion is injected into the second position of silicon chip by the second row ion implanting hole of partition board；
Reversible tray is to overturn silicon chip, by the first ion of injection of third Implanted Silicon Wafer and the one side phase of the second ion
To another side；
Pallet is removed into vacuum chamber.
Embodiment three
Fig. 6 is please referred to, further, the present invention also provides a kind of ion implantings to run piece method, includes the following steps：
A pallet is provided, pallet is flexibly connected a partition board, two rows of ion implanting holes, two rows of ion implanting holes are opened up on partition board
Position intersect and be staggered；
Silicon chip is placed in the lower section of tray upper spacer, wherein one is discharged to the first position of sub- injection hole face silicon chip；
Pallet is transported in a vacuum chamber, in the vacuum chamber at transport pallet to third ion；
By the second face of third Implanted Silicon Wafer；
Reversible tray is to overturn silicon chip；
First ion is injected into first face opposite with the second face of silicon chip by the first row ion implanting hole of partition board
First position on；
By partition board opposing tray shift position, so that the second position of second row ion implanting hole face silicon chip；
Second ion is injected into first face opposite with the second face of silicon chip by the second row ion implanting hole of partition board
The second position on；
Pallet is removed into vacuum chamber.
Example IV
Further, the present invention also provides a kind of ion implantings to run piece method, includes the following steps：
A pallet is provided, pallet is flexibly connected a partition board, two rows of ion implanting holes, two rows of ion implanting holes are opened up on partition board
Position intersect and be staggered；
Silicon chip is placed in the lower section of tray upper spacer, wherein one is discharged to the first position of sub- injection hole face silicon chip；
Pallet is transported in a vacuum chamber, in the vacuum chamber at transport pallet to the first ion；
First ion is injected into the first position of silicon chip by the first row ion implanting hole of partition board；
By partition board opposing tray shift position, so that the second position of second row ion implanting hole face silicon chip；
Second ion is injected into the second position of silicon chip by the second row ion implanting hole of partition board；
Reversible tray is to overturn silicon chip, by the first ion of injection of third Implanted Silicon Wafer and the one side phase of the second ion
To another side；
Pallet is removed into vacuum chamber.
Embodiment five
The ion implanting that sheet devices are run using above-mentioned ion implanting runs piece method, includes the following steps：
Pallet 50 is flexibly connected a partition board 52, and two rows of ion implanting holes 520, two rows of ion implanting holes are opened up on partition board 52
520 position, which intersects, to be staggered；
The lower section that silicon chip 60 is placed in tray upper spacer 52 is clipped between upper disk 51 and lower wall 52, wherein one is discharged to sub- note
Enter the first position of hole face silicon chip 60；
Multiple pallets 60 are put to the horizontal every layer of first conveyer belt 11 for passing in and out transmission area 10 by cart, level disengaging
Multiple pallets 50 are transported to vertical transport buffering area 20 by transmission area 10, and vertical transport buffering area 20 transports multiple supports vertically downward
Disk 50, then 50 priority of multiple pallets is from vertical transport buffering area 20 into two groups of horizontal conveying belts in single horizontal transmission area 30
Between 31 and edge is located at two groups of horizontal conveying belts 31；
Single horizontal transmission area 30 successively transports 50 to the first ion implanting station 32 of multiple pallets, and the first ion is passed through
The first row ion implanting hole of partition board 52 is injected into the first position of silicon chip 60；
Multiple pallets 50 are successively transported to switching position of silicon wafer station 33, partition board hole switching mechanism in single horizontal transmission area 30
52 opposing tray shift position of partition board is pushed, so that the second position of second row ion implanting hole face silicon chip 60；
Single horizontal transmission area 30 successively transports 50 to the second ion implanting station 34 of multiple pallets, and the second ion is passed through
The second row ion implanting hole of partition board 52 is injected into the second position of silicon chip 60；
Multiple pallets 50 are successively transported to vertical transport storage area 40, vertical transport storage area 40 in single horizontal transmission area 30
Pallet 50 is transported upwards, ion implanting is then removed and runs sheet devices.
When needing to inject third ion, before the first ion implanting or after the second ion implanting completes, injection the
Three ions.
There is the silicon chip 60 that above-described embodiment is prepared the doping of alternate first ion 61 and the second ion 62 to mix on one side
Miscellaneous, another side is adulterated with third ion 63.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
Cannot the limitation to the scope of the claims of the present invention therefore be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (13)
1. a kind of ion implanting runs sheet devices, which is characterized in that including：
Level disengaging transmission area, for the horizontal pallet for transporting loading silicon chip, the pallet is equipped in the horizontal transmission area that passes in and out
Several sliding rails disposed in parallel and a partition board, the partition board are slidably connected several sliding rails to be moved along the sliding rail, described
Two rows of ion implanting holes are offered on partition board, the position in two rows of ion implanting holes, which intersects, to be staggered, the width of the partition board
Degree is less than the width of the pallet, and the silicon chip is set on the lower section of the partition board on the pallet；The of partition board when initial
Ion implanting hole described in one row corresponds to the first position of the silicon chip；Vertical transport buffering area, the vertical transport buffering area connect
The logical horizontal disengaging transmission area, the vertical transport buffering area for transporting the pallet vertically upward or downwards；
Single horizontal transmission area, the single horizontal transmission area are connected to the vertical transport buffering area, the single horizontal transmission
Area is for successively transporting multiple pallets；The single horizontal transmission area has the first ion implanting station, switching silicon successively
Piece position station and the second ion implanting station, the first ion implanting station are used to inject in the first position of the silicon chip
First ion, the switching position of silicon wafer station is for moving the partition board so that ion implanting described in the second row of the partition board
Hole corresponds to the second position of the silicon chip, and the second ion implanting station is used to inject second in the second position of the silicon chip
Ion, the second position are different from the first position；Relatively described second ion implanting of first ion implanting station
The closer vertical transport buffering area of station；
Vertical transport storage area, the vertical transport storage area are connected to the single horizontal transmission area, for vertically upward or to
It is lower to transport the pallet；
Vacuum generator, the vacuum generator are used for the horizontal disengaging transmission area, vertical transport buffering area and vertical defeated
Storage area is sent to vacuumize.
2. ion implanting according to claim 1 runs sheet devices, it is characterised in that：The ion implanting is run sheet devices and is also wrapped
A silicon wafer turnover mechanism for overturning the silicon chip on the pallet is included, the single horizontal transmission area is also turned over silicon chip
Switching stations and third ion implanting station, the third ion implanting station are used to silicon chip described in third ion implanting having institute
State the first ion another side opposite with the one side of the second ion.
3. ion implanting according to claim 2 runs sheet devices, it is characterised in that：The silicon wafer turnover mechanism includes operating
Substrate and swivel plate, the operating substrate offer the substrate cavity corresponding to the swivel plate, and the swivel plate is equipped with along institute
State the shaft of operating substrate rotation, the swivel plate offers swivel plate cavity, the swivel plate have the first face and with it is described
The second opposite face of first face；The pallet includes upper disk and lower wall, and the upper disk activity connects the swivel plate and corresponding institute
The first face of swivel plate is stated, the lower wall is flexibly connected the second face of the swivel plate and the corresponding swivel plate, the upper disk
Disk silicon chip chamber is offered, the lower wall offers lower wall silicon chip chamber, and the gap between the upper disk and the lower wall is not less than
The thickness of the silicon chip, the edge of the silicon chip are located in the edge of the upper disk and the lower wall, the sliding rail with it is described every
Plate is set to the upper disk.
4. ion implanting according to claim 3 runs sheet devices, it is characterised in that：The single horizontal transmission area has two
Horizontal conveying belt is organized, there is pre-determined distance, the edge of the operating substrate to be respectively arranged on two between horizontal conveying belt described in two groups
The group horizontal transmission takes, so that the horizontal conveying belt drives the silicon wafer turnover mechanism and the silicon chip shift position.
5. ion implanting according to claim 3 runs sheet devices, it is characterised in that：It is offered in the operating substrate multiple
The mutually isolated substrate cavity, each substrate cavity correspond to a swivel plate, the multiple institutes being located on same line
It states swivel plate and connects a shaft.
6. ion implanting according to claim 3 runs sheet devices, it is characterised in that：First face of the swivel plate corresponds to
The opposite sides of the swivel plate cavity offers one first card slot respectively, and the first magnet is equipped in first card slot；It is described
The opposite sides that second face of swivel plate corresponds to the swivel plate cavity offers one second card slot, second card slot respectively
Inside it is equipped with the second magnet；The position that the upper disk corresponds to first card slot is equipped with one first card convex, described in the lower wall corresponds to
The position of second card slot is equipped with one second card convex, and first card convex is made with second card convex of magnetic material, described
First card convex is located in first card slot and mutually magnetic connection, and second card convex is located in second card slot and mutual
Magnetism connection.
7. ion implanting according to claim 3 runs sheet devices, it is characterised in that：It is convex that the middle part of the upper disk is equipped with first
The middle part in the portion of rising, the lower wall is equipped with the second lug boss, described after the upper disk is flexibly connected the swivel plate with the lower wall
First lug boss is embedded in second lug boss in the swivel plate cavity.
8. ion implanting according to claim 3 runs sheet devices, it is characterised in that：The silicon wafer turnover station is located at described
Between second ion implanting station and the vertical transport storage area, the third ion implanting station is located at the silicon wafer turnover
Between station and the vertical transport storage area.
9. ion implanting according to claim 3 runs sheet devices, it is characterised in that：The third ion implanting station is located at
Between the vertical transport buffering area and the first ion implanting station, the silicon wafer turnover station is located at the third ion
It injects between station and the first ion implanting station.
10. a kind of ion implanting runs piece method, which is characterized in that include the following steps：
One pallet is provided, the pallet is flexibly connected a partition board, opens up two rows of ion implanting holes on the partition board, it is two rows of it is described from
The position of sub- injection hole, which intersects, to be staggered；
The silicon chip is placed in the lower section of the partition board on tray, wherein of silicon chip described in ion implanting hole face described in a row
One position；
The pallet is transported in a vacuum chamber, in the vacuum chamber at transport pallet to the first ion；
First ion is injected into the first position of the silicon chip by the first row ion implanting hole of the partition board；
The relatively described pallet shift position of the partition board, so that the second of silicon chip described in ion implanting hole face described in second row
It sets；
Second ion is injected into the second position of the silicon chip by the second row ion implanting hole of the partition board；
The pallet is removed into the vacuum chamber.
11. ion implanting according to claim 10 runs piece method, it is characterised in that：It is described second ion is passed through it is described
After the step of second row ion implanting hole of partition board is injected into the second position of the silicon chip, also there are following steps：Overturning
The pallet has the one of first ion and the second ion to overturn the silicon chip, by third ion implanting to the silicon chip
The opposite another side in face.
12. ion implanting according to claim 10 runs piece method, it is characterised in that：The step：The pallet is transported
It send into a vacuum chamber and is injected into the first of the silicon chip by the first row ion implanting hole of the partition board with by the first ion
Between position, also there are following steps：By in third ion implanting to the silicon chip, then the pallet is overturn to overturn the silicon
Piece.
13. a kind of ion implanting runs piece method, which is characterized in that include the following steps：
Ion implanting is provided and runs sheet devices and pallet, the offer ion implanting runs sheet devices and includes：Level disengaging transmission area, institute
It states horizontal disengaging transmission area and transports the pallet for loading silicon chip for level；Vertical transport buffering area, the vertical transport buffering area
It is connected to the horizontal disengaging transmission area, the vertical transport buffering area for transporting the pallet vertically upward or downwards；Individually
Horizontal transmission area, the single horizontal transmission area are connected to the vertical transport buffering area, and the single horizontal transmission area is for first
After transport multiple pallets；The single horizontal transmission area has the first ion implanting station, switching position of silicon wafer work successively
Position and the second ion implanting station, the first ion implanting station be used for the silicon chip first position injection first from
Son, the switching position of silicon wafer station are used to switch the position of the silicon chip, and the second ion implanting station is used for described
The second ion is injected in the second position of silicon chip, and the second position is different from the first position；The first ion implanting work
The relatively described closer vertical transport buffering area of second ion implanting station in position；Vertical transport storage area, it is described vertical defeated
Storage area is sent to be connected to the single horizontal transmission area, for transporting the pallet vertically upward or downwards；Vacuum generator, it is described
Vacuum generator is used to vacuumize the horizontal disengaging transmission area, vertical transport buffering area and vertical transport storage area；It is described
Vacuum generator unlatching vacuumizes, and the pallet is flexibly connected a partition board, and two rows of ion implanting holes are opened up on the partition board, two rows of
The position in the ion implanting hole, which intersects, to be staggered；
The silicon chip is placed in the lower section of the partition board on tray, wherein of silicon chip described in ion implanting hole face described in a row
One position；
Multiple pallets are put to level and pass in and out transmission area, multiple pallets are transported to institute by the horizontal disengaging transmission area
Vertical transport buffering area is stated, the vertical transport buffering area transports multiple pallets vertically downward, and multiple pallets are successively
Into the single horizontal transmission area；
The single horizontal transmission area successively transports multiple pallets to the first ion implanting station, and the first ion is led to
The first row ion implanting hole for crossing the partition board is injected into the first position of the silicon chip；
Multiple pallets successively are transported to the switching position of silicon wafer station, by the partition board phase in the single horizontal transmission area
To the pallet shift position, so that the second position of silicon chip described in ion implanting hole face described in second row；
The single horizontal transmission area successively transports multiple pallets to the second ion implanting station, and the second ion is led to
The second row ion implanting hole for crossing the partition board is injected into the second position of the silicon chip；
Multiple pallets are successively transported to the vertical transport storage area, the vertical transport storage in the single horizontal transmission area
It deposits area to transport the pallet upwards, then removes the ion implanting and run sheet devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810398127.1A CN108766916A (en) | 2018-04-28 | 2018-04-28 | Ion implanting runs sheet devices and ion implanting runs piece method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810398127.1A CN108766916A (en) | 2018-04-28 | 2018-04-28 | Ion implanting runs sheet devices and ion implanting runs piece method |
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| Publication Number | Publication Date |
|---|---|
| CN108766916A true CN108766916A (en) | 2018-11-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810398127.1A Pending CN108766916A (en) | 2018-04-28 | 2018-04-28 | Ion implanting runs sheet devices and ion implanting runs piece method |
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| CN (1) | CN108766916A (en) |
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| CN106981540A (en) * | 2017-03-24 | 2017-07-25 | 东莞帕萨电子装备有限公司 | Ion implanting runs piece method and ion implanting runs piece system |
| CN208157383U (en) * | 2018-04-28 | 2018-11-27 | 东莞帕萨电子装备有限公司 | Ion implanting runs sheet devices |
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|---|---|---|---|---|
| KR20010019338A (en) * | 1999-08-26 | 2001-03-15 | 윤종용 | Holder for working the both side of a wafer |
| JP2013055053A (en) * | 2011-08-31 | 2013-03-21 | Wonik Ips Co Ltd | Substrate processing apparatus and substrate processing system comprising the same |
| WO2015127191A1 (en) * | 2014-02-20 | 2015-08-27 | Intevac, Inc. | System and method for bi-facial processing of substrates |
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Effective date of registration: 20190819 Address after: 215400 No. 18 Jinzhou Road, Chengxiang Town, Taicang City, Suzhou City, Jiangsu Province Applicant after: Suzhou Pasa Electronic Equipment Co., Ltd. Address before: 523411 High-tech Park of Juhui E Valley, Jinfu Second Road, Tangyi Management Zone, Liaobu Town, Dongguan City, Guangdong Province Applicant before: DONGGUAN PLASMA ELECTRONIC EQUIPMENT CO., LTD. |