CN102859722A - Inline substrate-treating apparatus - Google Patents
Inline substrate-treating apparatus Download PDFInfo
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- CN102859722A CN102859722A CN201180021270.5A CN201180021270A CN102859722A CN 102859722 A CN102859722 A CN 102859722A CN 201180021270 A CN201180021270 A CN 201180021270A CN 102859722 A CN102859722 A CN 102859722A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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Abstract
Disclosed is an inline substrate-treating apparatus. The inline substrate-treating apparatus according to the present invention comprises a first chamber (100) in which a substrate (10) is pre-heated; a second chamber (200) in which the substrate (10) pre-heated in the first chamber (100) is transferred, heated and plasma-treated; and a third chamber (300) in which the substrate (10) plasma-treated in the second chamber (200) is transferred, cooled and plasma-treated, wherein the first chamber (100), the second chamber (200) and the third chamber (300) are sequentially connected and arranged in a line.
Description
Technical field
The present invention relates to a kind of in-line arrangement substrate board treatment, more particularly, can improve the in-line arrangement substrate board treatment of plasma-treating technology productivity ratio.
Background technology
Existing fossil energy resource as oil or coal is progressively exhausted, and along with the raising to the environmental concern degree, as the alternative energy source that can address these problems, the correlation technique with unrestricted/non-harmful solar cell gets most of the attention.
The light that absorbs can be converted to the solar cell of electric energy, roughly be divided into large capacity version (monocrystalline (single crystalline), polycrystalline (poly crystalline)) solar cell, film-type (amorphous (amorphous), polycrystalline (poly crystalline)) solar cell, CdTe or CIS(CuInSe
2) etc. compound film solar cell, III-V family solar cell, DSSC and organic solar batteries etc.
On the other hand, now widely used most of solar cell, use silicon as the material of light absorbing zone, in this case, in order to improve the opto-electronic conversion effect of solar cell, proposed silicon is carried out that hydrogen plasma is processed and the method for the dangling bonds (dangling bond) of silicon atom being carried out Passivation Treatment.
In order to process silicon with hydrogen plasma, silicon need to be heated to more than the set point of temperature.For this reason, in the past utilization is arranged on the chamber outside or the inner heater that carry out plasma process and heats silicon, yet, the time that consumes in order to save as far as possible heating silicon recently, utilize cluster (cluster) mode to heat silicon.
Trunking mode is, has a plurality of chambers, and plasma-treating technology is divided into a plurality of techniques, then carries out the method for each technique at each chamber.
Summary of the invention
Technical problem
The plasma device that is used for trunking mode in the past is described.Fig. 1 is the schematic diagram that illustrates for the plasma device of in the past trunking mode.
With reference to Fig. 1, trunking mode realizes as follows, with a plurality of chambers 42 of circular configuration, utilizes afterwards the base plate transfer section 40 that is positioned at central authorities, with the substrate load or unload in each chamber 42.
Yet, according to this trunking mode in the past, need a lot of expenses when not only constructing the said equipment, and the base plate transfer section 40 that is positioned at central authorities consumes the unnecessary time when transferring substrate, so productivity ratio descends to some extent.
In order to address these problems, proposed in a chamber, simultaneously a plurality of silicon to be carried out the batch-type plasma treatment mode that hydrogen plasma is processed.Yet, according to this batch-type plasma treatment mode, process although can carry out hydrogen plasma to a plurality of silicon simultaneously, have advantages of and boost productivity,, can't carry out relatively uniformly hydrogen plasma processing to a plurality of silicon.
The method of dealing with problems
The present invention proposes for all problems that solves aforesaid conventional art, and its purpose is, a kind of array (Inline) formula substrate board treatment that can improve plasma-treating technology productivity ratio is provided.
In addition, the object of the invention is to, a kind of in-line arrangement substrate board treatment that can carry out to a plurality of substrates uniform plasma treatment is provided.
In addition, the object of the invention is to, provide a kind of and can make the minimized in-line arrangement substrate board treatment because the electromagnetic field that the interaction between a plurality of plasma electrodes causes is cancelled out each other.
In addition, the object of the invention is to, provide a kind of hydrogen of silicon layer that can effectively prevent to the in-line arrangement substrate board treatment of outdiffusion.
The effect of invention
According to the present invention, because chamber is configured to row successively, so in the situation that utilize trunking mode, can make and transfer the required time minimization of substrate.Therefore, can improve productivity ratio to the plasma-treating technology of substrate.
In addition, according to the present invention, the chamber arranged perpendicular of carrying out same process becomes row, thereby can carry out uniform plasma treatment to a plurality of substrates.
In addition, according to the present invention, plasma electrode consists of with the form of bending, thereby the electromagnetic field that the interaction between a plurality of plasma electrodes is caused is cancelled out each other and minimized.
In addition, according to the present invention, can prevent effectively that the hydrogen of silicon layer is to outdiffusion.
Realize the optimum way of invention
In order to reach described purpose, the in-line arrangement substrate board treatment that the present invention relates to is characterized in that, comprising: the first chamber, pre-hot substrate; The second chamber from the described substrate of described the first chamber reception through preheating, carries out plasma treatment when heating; And the 3rd chamber, receive described substrate through plasma treatment from described the second chamber, carry out plasma treatment when cooling off; Described the first chamber, described the second chamber and described the 3rd chamber are in turn connected into row.
Description of drawings
Fig. 1 is the schematic diagram that illustrates for the plasma device of in the past trunking mode.
Fig. 2 is the pie graph that the in-line arrangement substrate board treatment that one embodiment of the invention relate to is shown.
Fig. 3 is the pie graph that the second chamber that disposes the first plasma electrode that one embodiment of the invention relate to is shown.
Fig. 4 is the state diagram that is schematically shown in the radiofrequency signal that flows on the first plasma electrode that one embodiment of the invention relate to.
Fig. 5 is the pie graph that the in-line arrangement substrate board treatment that another embodiment of the present invention relates to is shown.
Fig. 6 is the pie graph that the second chamber unit that disposes the first plasma electrode that another embodiment of the present invention relates to is shown.
Fig. 7 is the state diagram that is schematically shown in the radiofrequency signal that flows on the first plasma electrode that another embodiment of the present invention relates to.
Fig. 8 is the pie graph that the in-line arrangement substrate board treatment that another embodiment of the present invention relates to is shown.
Embodiment
Detailed description of the present invention described later, can implement specific embodiments of the invention with reference to conduct is the accompanying drawing shown in the example.In order to make those of ordinary skill in the art implement the present invention, describe these embodiment in detail.Although various embodiment of the present invention differs from one another, and should be understood to mutually not repel.For example, in concrete shape, concrete structure and the characteristic of an embodiment of this record, in the situation that do not exceed thought of the present invention and protection range, can realize with other embodiment.In addition, should be understood to, in the situation that do not exceed thought of the present invention and protection range, the position of the indivedual inscapes among disclosed each embodiment or configuration can be changed.Therefore; detailed description described later also is not intended to restriction the present invention; say rightly, protection scope of the present invention should be as the criterion with the record of claims, and the whole technological thoughts in the equal scope of advocating with its claim all belong in the scope of the present invention.In the accompanying drawings, similarly Reference numeral represents same or similar function, and length, area, thickness and shape also might be exaggerated expression for the ease of understanding.
Below, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that the general technical staff of the technical field of the invention can easily implement the present invention.
At first, with in-line arrangement substrate board treatment of the present invention substrate is carried out plasma treatment, can be interpreted as, not only comprise semiconductor subassembly is carried out plasma treatment with such as silicon substrate, glass substrate etc. of substrate of often saying in the fields such as substrate, base plate for liquid crystal display device, used for solar batteries substrate, also comprise formed regulation film or pattern on the described substrate are carried out plasma treatment.Therefore, utilize in-line arrangement substrate board treatment treatment substrate of the present invention, can be interpreted as comprising formed silicon layer on the substrate is carried out plasma treatment.
Fig. 2 is the pie graph that the in-line arrangement substrate board treatment that one embodiment of the invention relate to is shown.
With reference to Fig. 2, the in-line arrangement substrate board treatment 1 that one embodiment of the invention relate to consists essentially of three chambers 100,200,300.More particularly, comprising: the first chamber 100 is used for pre-hot substrate 10; The second chamber 200 is to carrying out plasma treatment at the first chamber 100 through the substrate 10 of preheating; The 3rd chamber 300 is to cooling off through the substrate of plasma treatment at the second chamber 200.Below, formation and the function of each chamber are described respectively.
At first, the first chamber 100 is described.
With further reference to Fig. 2, it is airtight that the first chamber 100 constitutes the inner space substance, thereby can be provided for the space of pre-hot substrate 10.The shape of the first chamber 100 is not particularly limited, and is preferably cuboid.The material of the first chamber 100 can be stainless steel, aluminium or quartz etc., but is not limited thereto.
With further reference to Fig. 2 as can be known, in described three chambers, the first chamber 100 is positioned at the left side.At this, the reason on the left of the first chamber 100 is positioned at is relevant with the moving direction of substrate 10.In other words, the first chamber 100 through the substrate 10 of preheating to the right direction move, and move to the second chamber 200 that is positioned at the first chamber 100 right sides, therefore the first chamber 100 is shown is positioned at the left side.Certainly, substrate 10 to the right direction to move be for convenience of explanation and Set arbitrarily that whether the direct of travel of substrate 10 is right side or left side, unimportant in the present invention.In just illustrating below, the direct of travel of supposing substrate 10 is right direction.
With further reference to Fig. 2, the first chamber 100 can comprise primary heater 110.Thereby primary heater 110 can be carried out the function that a plurality of substrates 10 is heated pre-hot substrate 10.For example, when utilizing plasma that substrate is carried out the hydrogen passivation technology, primary heater 110 can arrive approximately 500 ℃ to 700 ℃ temperature with the preheating temperature of substrate 10.
At this moment, primary heater 110 can be made of a plurality of the first unit heaters 112.At this, the first unit heater 112 is the long heater air flow pressure switch rod of length normally, is inserted with heater in quartz ampoule inside, thereby and receives external power source generation heat by the terminal that is arranged on two ends.Along with substrate 10 is carried out preheating by a plurality of the first unit heaters 112, can carry out even heat treatment to the whole area of substrate 10.Preferred a plurality of the first unit heaters 112 configure across prescribed distance abreast with the long side direction of substrate 10, but are not limited thereto, and also can configure across prescribed distance abreast with the short side direction of substrate 10.In addition, the quantity that is configured in the first unit heater 112 of the first chamber 100 is not particularly limited, and can according to purpose of the present invention, carry out various changes.
Figure 2 illustrates, substrate 10 is loaded into separately the first chamber 100 and the situation of carrying out preheating, yet preferable substrate 10 is loaded into the first chamber 100 under the state on the substrate carrier (not shown) and carries out preheating to be placed on.Identical therewith, in the second chamber 200 and the 3rd chamber 300, substrate 10 is placed on the described substrate carrier and processes.About described substrate carrier, when being described below, the second chamber 200 and the 3rd chamber 300 omit.
Secondly, the first chamber 100 can comprise the first handover section, and this first handover section is for the substrate 10 that adds carried base board 10 to the first chamber 100 or unload through preheating from the first chamber 100.At this moment, described the first handover section can comprise a plurality of the first driven roller unit 120, and this first driven roller unit 120 has specific length, and along the right direction setting as substrate 10 moving directions.In the time of a plurality of the first driven roller unit 120 supporting substrates 10 with straight column mode moving substrate 10.More particularly, a plurality of the first driven roller unit 120 contact with the lower surface of substrate 10 and to the rotation of the moving direction of substrate 10, thereby substrate 10 is loaded into the first chamber 100 inside, after substrate 10 is loaded, supporting substrates 10 in the process of substrate 10 being carried out plasma treatment, after the plasma treatment of substrate 10 finished, contact with the lower surface of substrate 10 and rotate to the moving direction of substrate 10, thereby unload carried base board 10 from the first chamber 100.
In order to carry out smoothly these functions, as shown in Figure 2, preferred a plurality of the first driven roller unit 120 in the first chamber 100 inside with the equal height setting.And preferred a plurality of the first driven roller unit 120 link each other.On the other hand, according to setting position, a plurality of the first driven roller unit 120 can form with the width that differs from one another, yet, preferably form with same diameter.
Secondly, with further reference to Fig. 2, at the left surface of the first chamber 100, more particularly, load on interlocking vacuum chamber (load-lock chamber) 400 faces that contact with described later first, can form the first loading section 130 with Rack and height.The first loading section 130 be can be used as the passage that adds carried base board 10 by opening.Substrate 10 is being carried out in the process of pre-heating technique, for airtight the first chamber 100, needing sealing the first loading section 130, therefore, can door (not shown) be set in the first loading section 130, this mode that moves with above-below direction opens and closes the first chamber 100.
Secondly, with further reference to Fig. 2, at the right flank of the first chamber 100, more particularly, on the face of the first chamber 100 relative with the face that disposes the first loading section 130 and that contact with the second chamber 200, can form the first unloading section 140 with Rack and height.The first unloading section 140 can be carried out as the effect of unloading the passage of carried base board 10 by opening.Be similar to the first loading section 130, in heat-treating the process of technique, for airtight the first chamber 100, need sealing the first unloading section 140, therefore, can another door (not shown) be set in the first unloading section 140, this mode that moves with above-below direction opens and closes the first chamber 100.
On the other hand, the first chamber 100 can comprise that the first chamber unit 102(is with reference to Fig. 5), this first chamber unit 102 consists essentially of the first upper chamber 104(of separate configurations up and down with reference to Fig. 5) and the first lower chamber 106(with reference to Fig. 5).
Secondly, the second chamber 200 is described.
With further reference to Fig. 2, it is airtight that the second chamber 200 constitutes the inner space substance, and the space of substrate 10 being carried out plasma treatment is provided.Be similar to the first chamber 100, preferred the second chamber 200 be shaped as cuboid.On the other hand, the material of the second chamber 200 can be stainless steel, aluminium or quartz etc., but is not limited thereto.
With further reference to Fig. 2 as can be known, the second chamber 200 is between the first chamber 100 and the 3rd chamber 300.As mentioned above, this moving direction with substrate 10 is relevant.
With further reference to Fig. 2, the second chamber 200 can comprise secondary heater 210.For substrate 10 is carried out plasma treatment, substrate 10 need to be heated and remain on more than the set point of temperature, and in this sense, secondary heater 210 can be carried out the function that substrate 10 is heated.For example, when utilizing plasma that substrate is carried out the hydrogen passivation technology, secondary heater 210 can be maintained at about the temperature of substrate 10 400 ℃ to 1000 ℃ temperature.
At this moment, as shown in Figure 2, secondary heater 210 can be made of a plurality of the second unit heaters 212.The second unit heater 212 has the 26S Proteasome Structure and Function roughly the same with the first unit heater 112, has simultaneously identical configuration, therefore omit the detailed description to the second unit heater 212.
Secondly, with further reference to Fig. 2, the second chamber 200 can comprise a plurality of the first plasma electrodes 250.The first plasma electrode 250 generates plasma with inductively coupled plasma (Inductively CoupledPlasma) production method.That is, the radio-frequency power supply that can receive supply high frequency voltage to be generating an electromagnetic field, thereby generates and keep plasma.
Fig. 3 is the pie graph that the second chamber that disposes the first plasma electrode that one embodiment of the invention relate to is shown.
With reference to Fig. 3, the first plasma electrode 250 can comprise the first upper electrode section 254, kink 252 and the first lower electrode section 256, and has the shape that is bent across substrate 10.More particularly, the first plasma electrode 250 can comprise the first upper electrode section 254 and the first lower electrode section 256 that is positioned at the bottom of substrate 10 on the top that is positioned at substrate 10 take kink 252 as benchmark.At this, kink 252 can have at least one inflection point, as shown in Figure 3, preferably has two inflection points.Thus, the first plasma electrode 250 can have
Word or anti-
Word shape.At this moment, substrate 10 can be configured in
Word or anti-
Between the word shape.
With further reference to Fig. 3 as can be known, be connected with radio-frequency antenna 260 at the end of the first upper electrode section 254, and be connected with ground wire 270 on the end of the first lower electrode section 256.At this, radio-frequency antenna 260 can impose on signal the first plasma electrode 250, and ground wire 270 can make the radiofrequency signal that is applied in flow by the first plasma electrode 250.
Fig. 4 is schematically shown in the state diagram that radiofrequency signal is passed through on the first plasma electrode that one embodiment of the invention relate to.
With reference to Fig. 4, the first upper electrode section 254 of the first plasma electrode 250 of being positioned at substrate 10 tops is applied radiofrequency signal, and radiofrequency signal flows out from the first lower electrode section 256 of the first plasma electrode 250 of being positioned at substrate 10 bottoms.That is, the radiofrequency signal from radio-frequency antenna 260 applies is applied on the top of substrate 10, moves along the first plasma electrode 250 afterwards, afterwards in substrate 10 bottoms, flows out by ground wire 270, and plasma produces and is maintained by this process.
Consist of based on this, the sense from radio-frequency antenna 260 that flows in the first upper electrode section 254 and the first lower electrode section 256 is opposite, therefore, and the phenomenon that does not have a certain specific region plasma density reduces because radiofrequency signal is weak.That is, although the regional electromagnetic field that approaches at the position of placement substrate 10 and ground wire 270 may die down, yet should the zone also belong to zone near radio-frequency antenna 260, so the intensity of electromagnetic field is compensated.And in the zone near kink 252, the electromagnetic field that the electromagnetic field that the first upper electrode section 254 produces and the first lower electrode section 256 produce compensates mutually, and its result can obtain uniform plasma density at whole substrate 10.
Secondly, with further reference to Fig. 2, the second chamber 200 can comprise the second handover section, and this second handover section is for the substrate 10 that adds carried base board 10 to the second chamber 200 or unload through plasma treatment from the second chamber 200.Be similar to described the first handover section, described the second handover section can comprise a plurality of the second driven roller unit 220, and this second driven roller unit 220 has specific length, and along the moving direction setting of substrate 10.
Except adding carried base board 10 to the second chamber 200 and unloading through the substrate 10 of plasma treatment from the second chamber 200, a plurality of the second driven roller unit 220 have the 26S Proteasome Structure and Function roughly the same with a plurality of first driven roller unit 120 of the first chamber 100, has simultaneously identical configuration, therefore omit the detailed description to the second driven roller unit 220.
Secondly, with further reference to Fig. 2, at the left surface of the second chamber 200, more particularly, on face that the first chamber 100 contacts, can form the second loading section 230 with Rack and height.And, at the right flank of the second chamber 200, more particularly, on the face of the second chamber 200 relative with the face that disposes the second loading section 230 and that contact with the 3rd chamber 300, can form the second unloading section 240 with Rack and height.These the second loading sections 230 and the second unloading section 240 have the 26S Proteasome Structure and Function identical with the first unloading section 140 with described the first loading section 130, therefore detailed.
On the other hand, the second chamber 200 can comprise the second chamber unit 202, and this second chamber unit 202 consists essentially of the second upper chamber 204(of separate configurations up and down with reference to Fig. 5) and the second lower chamber 206(with reference to Fig. 5).To this aftermentioned.
Secondly, the 3rd chamber 300 is described.
With further reference to Fig. 2, it is airtight that the 3rd chamber 300 constitutes the inner space substance, can be provided for the space of cooling base 10.The type of cooling can be utilized water-cooling pattern or air cooling way, according to circumstances also can utilize the nature type of cooling.Be similar to the second chamber 200, preferred the 3rd chamber 300 be shaped as cuboid, the material of the 3rd chamber 300 can be stainless steel, aluminium or quartzy etc., but is not limited thereto.
With further reference to Fig. 2 as can be known, the 3rd chamber 300 is positioned at the right side of the second chamber 200.As mentioned above, this moving direction with substrate 10 is relevant.
Secondly, with further reference to Fig. 2, the 3rd chamber 300 can comprise a plurality of the second plasma electrodes 350, and this second plasma electrode 350 can generate and keep plasma.The second plasma electrode 350 can comprise the second lower electrode section (not shown) that is positioned at the second upper electrode section (not shown) on substrate 10 tops take kink (not shown) as benchmark and is positioned at substrate 10 bottoms.The second plasma electrode 350 has the 26S Proteasome Structure and Function roughly the same with the first plasma electrode 250, has simultaneously identical configuration, therefore detailed.
Secondly, with further reference to Fig. 2, the 3rd chamber 300 can comprise the 3rd handover section, and the 3rd handover section is for the substrate 10 that adds carried base board 10 to the 3rd chamber 300 or unload through cooling from the 3rd chamber 300.The described the 3rd transfers category is similar to described the first handover section, can comprise that 320, the three driven roller unit 320, a plurality of the 3rd driven roller unit have specific length, and along the moving direction setting of substrate 10.Except adding carried base board 10 to the 3rd chamber 300 and unloading through the substrate 10 of cooling from the 3rd chamber 300, a plurality of the 3rd driven roller unit 320 have the 26S Proteasome Structure and Function roughly the same with a plurality of the first driven roller unit 120, has simultaneously identical configuration, therefore omit the detailed description to the 3rd driven roller unit 320.
Secondly, with further reference to Fig. 2, at the left surface of the 3rd chamber 300, more particularly, on the face of the 3rd chamber 300 that contacts with the second chamber 200, can be formed with the 3rd loading section 330 with Rack and height.And, right flank at the 3rd chamber 300, more particularly, on the face of the 3rd chamber 300 relative with the face that disposes the 3rd loading section 330 and that contact with the second loading interlocking vacuum chamber 500 described later, can form the 3rd unloading section 340 with Rack and height.The 3rd loading section 330 and the 3rd unloading section 340 have the 26S Proteasome Structure and Function identical with the first unloading section 140 with described the first loading section 130, therefore detailed.
The first chamber 100, the second chamber 200, the 3rd chamber 300 as the basic constituent element of in-line arrangement substrate board treatment 1 more than have been described.Below, other inscape of in-line arrangement substrate board treatment 1 is described.
With further reference to Fig. 2, the in-line arrangement substrate board treatment 1 that one embodiment of the invention relate to can comprise that first loads interlocking vacuum chamber 400.First loads interlocking vacuum chamber 400 has the function that interim preservation is loaded into the substrate 10 of the first chamber 100.In addition, first loads interlocking vacuum chamber 400 can carry out following function, under atmospheric pressure, adds carried base board 10 under the state of closing gate valve 410, thereby prevents that the first chamber 100 is exposed to antivacuum state.
Figure 2 illustrates, load in the interlocking vacuum chamber 400 first and load the situation of preserving a substrate 10, but according to circumstances, in the first loading interlocking vacuum chamber 400, can load and preserve a plurality of substrates 10.
With further reference to Fig. 2, first loads interlocking vacuum chamber 400 can comprise the 4th handover section, and the 4th handover section is used for loading interlocking vacuum chamber 400 from first and unloads carried base board 10.The described the 4th transfers category is similar to described the first handover section, can comprise a plurality of 4 wheel driven action rollers unit 420, and this 4 wheel driven action roller unit 420 has specific length, and along the transfer direction setting of substrate 10.A plurality of 4 wheel driven action rollers unit 420 has the 26S Proteasome Structure and Function roughly the same with a plurality of the first driven roller unit 120, therefore detailed.
Secondly, with further reference to Fig. 2, the in-line arrangement substrate board treatment 1 that one embodiment of the invention relate to can comprise that second loads interlocking vacuum chamber 500.Second loads interlocking vacuum chamber 500 has interim preservation through the function of the substrate 10 of cooling.In addition, second loads interlocking vacuum chamber 500 can carry out following function, under atmospheric pressure and unload carried base board 10 under the state of closing gate valve 510, thereby prevents that the 3rd chamber 300 is exposed to antivacuum state.
With further reference to Fig. 2, second loads interlocking vacuum chamber 500 can comprise the 5th handover section, and the 5th handover section is used for loading interlocking vacuum chamber 500 to second and adds carried base board 10.The described the 5th transfers category is similar to described the first handover section, can comprise that 520, the five driven roller unit 520, a plurality of the 5th driven roller unit have specific length, and along the transfer direction setting of substrate 10.A plurality of the 5th driven roller unit 520 have the 26S Proteasome Structure and Function roughly the same with a plurality of the first driven roller unit 120, therefore detailed.
With further reference to Fig. 2 as can be known, become a row configuration with the first order that loads interlocking vacuum chamber 400, the first chamber 100, the second chamber 200, the 3rd chamber 300, the second loading interlocking vacuum chamber 500 successively.Consider above-mentioned each chamber 100,200,300,400,500 function, substrate 10 can load interlocking vacuum chamber 400, the first chamber 100, the second chamber 200, the 3rd chamber 300, second with first and load the ordinal shift of interlocking vacuum chamber 500 and processed.As carrying out the inscape of transferring these substrates 10, each chamber 100,200,300,400, described the first handover section of 500, described the second handover section, described the 3rd handover section, described the 4th handover section, described the 5th handover section of being configured in arranged.
Secondly, with further reference to Fig. 2, the in-line arrangement substrate board treatment 1 that one embodiment of the invention relate to can comprise: the first robotic arm 600, this first robotic arm 600 are used for loading interlocking vacuum chamber 400 to first and add carried base board 10; With the second robotic arm 700, this second robotic arm 700 is used for loading interlocking vacuum chamber 500 from second and unloads carried base board 10.
The first robotic arm 600 is configured in first and loads the outside that interlocks vacuum chamber 400, and adds carried base board 10 to the first loading interlocking vacuum chamber 400.For example, the first robotic arm 600 can be carried out following function, loads the left side of interlocking vacuum chamber 400 and preserves the substrate box (not shown) of a plurality of substrates 10 and take out substrate 10 from being configured in first, and load to first and to interlock vacuum chamber 400 and add carried base board 10.
Be similar to the first robotic arm 600, the second robotic arms 700 and be configured in the second right side that loads interlocking vacuum chamber 500, and load interlocking vacuum chamber 500 from second and unload carried base board 10 and transmit to the outside.The arm 610,710 that figure 2 illustrates the first robotic arm 600 and the second robotic arm 700 is respectively one, but is not limited thereto, and the first robotic arm 600 and the second robotic arm 700 can adopt respectively the arm 610,710 of varying number.The first and second robotic arms 600,700 26S Proteasome Structure and Function belong to known technology, therefore omit more detailed description.
In the in-line arrangement substrate board treatment 1 that the present embodiment that consists of as mentioned above relates to, can carry out various plasma-treating technologies, for example, utilize plasma that silicon layer is carried out hydrogen passivation technology etc.The in-line arrangement substrate board treatment 1 that the present embodiment relates in the situation that utilize clustered pattern, shortens as much as possible described the first to the 5th handover section and is used for transferring substrate 10 handover substrates 10 required times, thereby can shorten the time of whole plasma process.Its result can improve the productivity ratio of plasma process.
Fig. 5 is the pie graph that the in-line arrangement substrate board treatment that another embodiment of the present invention relates to is shown.
With reference to Fig. 5, the in-line arrangement substrate board treatment 2 that relates to according to another embodiment of the present invention, each chamber 100,200,300 comprises chamber unit, this chamber unit has upper chamber and the lower chamber of configuration independent of one another.
More particularly, the first chamber 100 comprises the first chamber unit 102, and this first chamber unit 102 comprises the first upper chamber 104 and first lower chamber 106 of independently of one another and up and down configuration; The second chamber 200 comprises the second chamber unit 202, and this second chamber unit 202 comprises the second upper chamber 204 and second lower chamber 206 of independently of one another and up and down configuration; The 3rd chamber 300 comprises that the 3rd chamber unit 302, the three chamber unit 302 comprise the 3rd upper chamber 304 and the 3rd lower chamber 306 of independently of one another and up and down configuration.
At this moment, as shown in Figure 5, the first chamber unit 102, the second chamber unit 202, the 3rd chamber unit 302 can connect and be configured to row.Specifically, the 3rd upper chamber 304 connections of the first upper chamber 104 of the first chamber unit 102, the second upper chamber 204 of the second chamber unit 202 and the 3rd chamber unit 302 are configured to row, and the 3rd lower chamber 306 connections of the second lower chamber 206 of the first lower chamber 106 of the first chamber unit 102, the second chamber unit 202 and the 3rd chamber unit 302 are configured to row.
When each chamber 100,200,300 consists of with multilayer form, once can process more substrates 10, thereby have advantages of the productivity ratio that can further improve plasma process.
On the other hand, when each chamber 100,200,300 comprises: include configuration independent of one another upper chamber 104,204,304 and lower chamber 106,206,306 chamber unit 102,202,302 the time, first and second plasma electrode 280,380 that is configured in the second chamber 200 and the 3rd chamber 300 can have the structure different from the first plasma electrode 250 shown in Figure 3.
First and second load interlocking vacuum chambers 400,500 also can constitute up and down independently upper chamber and lower chamber, with the first to the 3rd chamber 100,200,300 corresponding.
Fig. 6 is the pie graph that the second chamber unit that disposes the first plasma electrode that another embodiment of the present invention relates to is shown.
With reference to Fig. 6 as can be known, the Fig. 3 that is configured in the second chamber 200 that is formed by a space from the first plasma electrode 250 is different, and the first plasma electrode 280 of Fig. 6 all is configured in the second upper chamber 204 and the second lower chamber 206.For this reason, the first plasma electrode 280 of Fig. 6 is similar to the first plasma electrode 250 of Fig. 3, can comprise kink 282, the first upper electrode section 284, the first lower electrode section 286, wherein, the first upper electrode section 284 is configured in the second upper chamber 204, and the first lower electrode section 286 is configured in the second lower chamber 206.For this reason, the kink 282 of the first plasma electrode 280 of preferred Fig. 6 is longer than the kink 252 of the first plasma electrode 250 of Fig. 3.
With further reference to Fig. 6 as can be known, be connected with radio-frequency antenna 260 at the end of the first upper electrode section 284, and be connected with ground wire 270 at the end of the first lower electrode section 286.This structure is similar to structure shown in Figure 3, yet, in Fig. 3, radio-frequency antenna 260 and ground wire 270 are configured in the side of the second chamber 200 that forms a space, and in Fig. 6, radio-frequency antenna 260 and ground wire 270 are configured in respectively the side of the second upper chamber 204 independent of each other and the second lower chamber, there are differences on the structure.
Fig. 7 is schematically shown in the state diagram that radiofrequency signal is passed through on the first plasma electrode that another embodiment of the present invention relates to.
With reference to Fig. 7, the first upper electrode section 284 that is configured in the second upper chamber 204 is applied radiofrequency signal, and radiofrequency signal flows out from the second lower electrode section 286 that is configured in the second lower chamber 206.Based on flowing of this radiofrequency signal, in the second upper chamber 204, can and keep plasma by 284 generations of the first upper electrode section, in the second lower chamber 206, can produce and keep plasma by the first lower electrode section 286.
On the other hand, the second plasma electrode 380 that is configured in the 3rd chamber 300 of Fig. 6 has the structure identical with the first plasma electrode 280 essence, therefore omit the detailed description to the second plasma electrode 380.
In addition, in the structure of the in-line arrangement substrate board treatment 2 of Fig. 5, except each chamber 100,200,300 comprises the upper chamber 104,204 that includes independently of one another and up and down configuration, 304 and lower chamber 106,206,306 chamber unit 102,202,302, also have outside the first and second plasma electrodes 280,380 the structure, has substrate board treatment 1 same structure with Fig. 2, therefore omit the detailed description to other inscape.
Fig. 8 is the pie graph that the in-line arrangement substrate board treatment that another embodiment of the present invention relates to is shown.
With reference to Fig. 8, in the in-line arrangement substrate board treatment 3 that another embodiment of the present invention relates to, each chamber 100,200,300 can comprise that arranged perpendicular becomes a plurality of chamber unit of row.More particularly, the first chamber 100 can comprise that arranged perpendicular becomes a plurality of first chamber unit 102 of row, the second chamber 200 comprises that arranged perpendicular becomes a plurality of the second chamber unit 202, the three chambers 300 of row to comprise that arranged perpendicular becomes a plurality of the 3rd chamber unit of row.When so consisting of, once can carry out plasma treatment to more substrates 10, thereby can boost productivity to greatest extent.
Figure 8 illustrates the situation that the first chamber 100, the second chamber 200, the 3rd chamber 300 comprise respectively two the first chamber unit 102, the second chamber unit 202, the 3rd chamber unit 302, but be not limited thereto, each chamber can comprise the chamber unit of varying number.
First and second load interlocking vacuum chambers 400,500 also can consist of accordingly with the first to the 3rd chamber 100,200,300 formation.
The in-line arrangement substrate board treatment 3 of Fig. 8 becomes the upper chamber and a plurality of chamber unit of lower chamber of row except comprising arranged perpendicular, and is identical with the formation of the substrate board treatment 2 of Fig. 5, therefore omit the detailed description to other inscape.
Below, 1 pair of silicon layer of in-line arrangement substrate board treatment that explanation utilizes one embodiment of the invention to relate to reference to Fig. 2 carries out the technique of plasma treatment.
At first, silicon layer is transplanted on first by the first robotic arm 600 and loads interlocking vacuum chamber 400.The silicon layer of being transferred can be kept at first temporarily and load interlocking vacuum chamber 400, loads 400 unloadings of interlocking vacuum chamber by a plurality of 4 wheel driven action rollers unit 420 from first afterwards and is loaded into the first chamber 100.
Secondly, can carry out preheating to the silicon layer that is loaded into the first chamber 100.More particularly, be loaded into the silicon layer of the first chamber 100, can carry out preheating by primary heater 110, thereby rise to the second temperature from the first temperature.At this, the first temperature can be 300 ℃ to 600 ℃ temperature, and the second temperature can be 400 ℃ to 1000 ℃ temperature.
Through the silicon layer of preheating, can after 100 unloadings of the first chamber, be loaded into the second chamber 200 by a plurality of the first driven roller unit 120.
Secondly, the temperature that is loaded into the silicon layer of the second chamber 200 can remain on the second temperature, carries out plasma treatment by plasma electrode 250 simultaneously.At this moment, for the temperature with silicon layer remains on the second temperature, drive secondary heater 210, and for silicon layer being carried out plasma treatment, drive the first plasma electrode 250.Thus, silicon layer can carry out the hydrogen Passivation Treatment at the second chamber 200.That is, hydrogen can be diffused into silicon layer, and the hydrogen that is diffused and the dangling bonds in the silicon layer (dangling bond) combination, thereby make silicon layer become stable.On the other hand, the plasma the second chamber 200 produces is preferably the plasma that contains hydrogen or ammonia.
Through the silicon layer of plasma treatment, can after 200 unloadings of the second chamber, be loaded into the 3rd chamber 300 by a plurality of the second driven roller unit 220.
Secondly, the silicon layer that is loaded into the 3rd chamber 300 can be cooled to the 3rd temperature from the second temperature.At this moment, can drive the second plasma electrode 350 that has in the 3rd chamber 300.That is, during the 3rd chamber 300 cooling silicon layers, also can continue to carry out plasma treatment by 350 pairs of silicon layers of the second plasma electrode.In the plasma treatment that the 3rd chamber 300 carries out, be not to last till that the silicon layer temperature reaches till the normal temperature, but the silicon layer temperature is interrupted when reaching the 3rd temperature.At this, the 3rd temperature can be 300 ℃ to 700 ℃ temperature.During the cooling silicon layer, the second plasma electrode 350 continues to drive, thereby can effectively prevent from being blended into the hydrogen of silicon layer to the phenomenon of outdiffusion (out diffusion) at the second chamber 200 by the hydrogen plasma processing.
Silicon layer after the cooling processing can by a plurality of the 3rd driven roller unit 320 after 300 unloadings of the 3rd chamber, be loaded into second and load interlocking vacuum chamber 500.Be loaded into second and load the silicon layer that interlocks vacuum chamber 500, preserved temporarily, move to the outside by the second robotic arm 700 afterwards.
In above detailed description, the present invention according to as the specific item such as concrete inscape and limited embodiment and accompanying drawing be illustrated, yet these are to provide in order to help to understand the present invention more comprehensively, described embodiment is not intended to limit the present invention, and the general technical staff of the technical field of the invention can carry out various modifications and distortion according to these descriptions.Therefore, thought of the present invention can not be defined as the embodiment that is defined in above-mentioned explanation, and all the elements of the protection range of claims described later and or equivalence distortion impartial with the protection range of these claims all are contained in the thought range of the present invention.
Claims (21)
1. an in-line arrangement substrate board treatment is characterized in that, comprising:
The first chamber carries out preheating to substrate;
The second chamber from the described substrate of described the first chamber reception through preheating, carries out plasma treatment in heating; And
The 3rd chamber from the described substrate of described the second chamber reception through plasma treatment, carries out plasma treatment in cooling;
Described the first chamber, described the second chamber and described the 3rd chamber connect successively and are configured to row.
2. in-line arrangement substrate board treatment according to claim 1 is characterized in that,
In described the first chamber, be provided with:
Primary heater is used for the described substrate of preheating; And
The first handover section loads described substrate with the state that supports described substrate to described the first chamber, perhaps will unload from described the first chamber at the described substrate that described the first chamber is finished preheating;
In described the second chamber, be provided with:
The first plasma electrode is for generation of plasma;
Secondary heater is used for heating described substrate; And
The second handover section loads described substrate with the state that supports described substrate to described the second chamber, perhaps will unload from described the second chamber at the described substrate that described the second chamber is finished plasma treatment;
In described the 3rd chamber, be provided with:
The second plasma electrode is for generation of plasma; And
The 3rd handover section loads described substrate with the state that supports described substrate to described the 3rd chamber, perhaps will unload from described the 3rd chamber at the described substrate of described the 3rd chamber through cooling.
3. in-line arrangement substrate board treatment according to claim 2 is characterized in that,
Described the first handover section comprises a plurality of the first driven roller unit, and this first driven roller unit is along the moving direction setting of described substrate, and loads described substrate and unload described substrate from described the first chamber to described the first chamber;
Described the second handover section comprises a plurality of the second driven roller unit, and this second driven roller unit is along the moving direction setting of described substrate, and loads described substrate and unload described substrate from described the second chamber to described the second chamber;
Described the 3rd handover section comprises a plurality of the 3rd driven roller unit, and the 3rd driven roller unit is along the moving direction setting of described substrate, and loads described substrate and unload described substrate from described the 3rd chamber to described the 3rd chamber.
4. in-line arrangement substrate board treatment according to claim 3 is characterized in that,
Described a plurality of the first driven roller unit links each other, and described a plurality of the second driven roller unit link each other, and described a plurality of the 3rd driven roller unit link each other.
5. in-line arrangement substrate board treatment according to claim 2 is characterized in that,
Described primary heater comprises a plurality of the first unit heaters, and described secondary heater comprises a plurality of the second unit heaters.
6. in-line arrangement substrate board treatment according to claim 5 is characterized in that,
Described a plurality of the first unit heater and described a plurality of the second unit heater are configured to, and be parallel with the long side direction of described substrate and across prescribed distance.
7. in-line arrangement substrate board treatment according to claim 2 is characterized in that,
In described the second chamber configuration a plurality of described the first plasma electrodes are arranged,
In described the 3rd chamber configuration a plurality of described the second plasma electrodes are arranged,
Described the first plasma electrode comprises: the kink with at least one inflection point; Be positioned at the first upper electrode section on the top of described substrate; Be positioned at the first lower electrode section of the bottom of described substrate;
Described the second plasma electrode comprises: the kink with at least one inflection point; Be positioned at the second upper electrode section on the top of described substrate; Be positioned at the second lower electrode section of the bottom of described substrate.
8. in-line arrangement substrate board treatment according to claim 7 is characterized in that,
The end of described the first upper electrode section and the second upper electrode section is connected with radio-frequency antenna, and this radio-frequency antenna applies the radiofrequency signal for generation of electromagnetic field, with the generation plasma,
The end of described the first lower electrode section and the second lower electrode section is connected with ground wire.
9. in-line arrangement substrate board treatment according to claim 7 is characterized in that,
Described the first plasma electrode and described the second plasma electrically have
Word or anti-
A kind of shape in the word.
10. in-line arrangement substrate board treatment according to claim 2 is characterized in that, also comprises:
First loads the interlocking vacuum chamber, the interim described substrate that is loaded into described the first chamber of preserving;
Second loads the interlocking vacuum chamber, the interim preservation from the described substrate of described the 3rd chamber unloading;
Described first loads interlocking vacuum chamber, described the first chamber, described the second chamber, described the 3rd chamber and described the second loading interlocking vacuum chamber is configured to row successively.
11. in-line arrangement substrate board treatment according to claim 10 is characterized in that,
Described first loads the interlocking vacuum chamber comprises the 4th handover section, and the 4th handover section loads the interlocking vacuum chamber with the state that supports described substrate from described first and unloads described substrate,
Described second loads the interlocking vacuum chamber comprises the 5th handover section, and the 5th handover section loads the interlocking vacuum chamber with the state that supports described substrate to described second and loads described substrate.
12. in-line arrangement substrate board treatment according to claim 11 is characterized in that,
Described the 4th handover section comprises a plurality of 4 wheel driven action rollers unit, and this 4 wheel driven action roller unit is along the moving direction setting of described substrate, and loads the interlocking vacuum chamber from described first and unload described substrate,
Described the 5th handover section comprises a plurality of the 5th driven roller unit, and the 5th driven roller unit is along the moving direction setting of described substrate, and loads the interlocking vacuum chamber to described second and load described substrate.
13. in-line arrangement substrate board treatment according to claim 2 is characterized in that,
Described the first chamber comprises the first chamber unit, and this first chamber unit comprises independently of one another up and down the first upper chamber and first lower chamber of configuration;
Described the second chamber comprises the second chamber unit, and this second chamber unit comprises independently of one another up and down the second upper chamber and second lower chamber of configuration;
Described the 3rd chamber comprises the 3rd chamber unit, and the 3rd chamber unit comprises independently of one another up and down the 3rd upper chamber and the 3rd lower chamber of configuration.
14. in-line arrangement substrate board treatment according to claim 13 is characterized in that,
Be in turn connected into row with described the first chamber unit, described the second chamber unit and described the 3rd chamber unit successively.
15. in-line arrangement substrate board treatment according to claim 13 is characterized in that,
Be provided with the first upper portion heater of described primary heater in described the first upper chamber, be provided with the first lower heater of described primary heater in described the first lower chamber, be provided with the second upper portion heater of described secondary heater in described the second upper chamber, be provided with the second lower heater of described secondary heater in described the second lower chamber;
Described the first upper portion heater comprises a plurality of first top unit's heaters,
Described the first lower heater comprises a plurality of first bottom unit's heaters,
Described the second upper portion heater comprises a plurality of second top unit's heaters,
Described the second lower heater comprises a plurality of second bottom unit's heaters.
16. in-line arrangement substrate board treatment according to claim 13 is characterized in that,
In described the second chamber unit, dispose a plurality of described the first plasma electrodes, in described the 3rd chamber unit, dispose a plurality of described the second plasma electrodes,
Described the first plasma electrode comprises: the kink with at least one inflection point; Be configured in the first upper electrode section of described the second upper chamber; With the first lower electrode section that is configured in described the second lower chamber;
Described the first upper electrode section is at the inner plasma that produces of described the second upper chamber, and described the first lower electrode section produces plasma in described the second lower chamber,
Described the second plasma electrode comprises: the kink with at least one inflection point; Be configured in the second upper electrode section of described the 3rd upper chamber; With the second lower electrode section that is configured in described the 3rd lower chamber;
Described the second upper electrode section is at the inner plasma that produces of described the 3rd upper chamber, and described the second lower electrode section produces plasma in described the 3rd lower chamber.
17. in-line arrangement substrate board treatment according to claim 16 is characterized in that,
The end of described the first upper electrode section and the second upper electrode section is connected with radio-frequency antenna respectively, and this radio-frequency antenna applies the radiofrequency signal for generation of electromagnetic field, with the generation plasma,
The end of described the first lower electrode section and the second lower electrode section is connected with ground wire respectively.
18. in-line arrangement substrate board treatment according to claim 16 is characterized in that,
Described the first plasma electrode and described the second plasma electrically have
Word or anti-
A kind of shape in the word.
19. in-line arrangement substrate board treatment according to claim 13 is characterized in that,
Described the first chamber comprises that arranged perpendicular becomes a plurality of described first chamber unit of row, described the second chamber comprises that arranged perpendicular becomes a plurality of described second chamber unit of row, and described the 3rd chamber comprises that arranged perpendicular becomes a plurality of described the 3rd chamber unit of row.
20. in-line arrangement substrate board treatment according to claim 19 is characterized in that,
Described a plurality of the second chamber unit comprises respectively described a plurality of the first plasma electrode, and described a plurality of the 3rd chamber unit comprise respectively described a plurality of the second plasma electrode.
21. in-line arrangement substrate board treatment according to claim 2 is characterized in that,
At described the first chamber, the temperature of described substrate rises to the second temperature from the first temperature,
At described the second chamber, the temperature of described substrate remains on the second temperature,
At described the second chamber, when the temperature of described substrate remain on described the second temperature during, described the first plasma electrode is driven,
At described the 3rd chamber, the temperature of described substrate is cooled to described the 3rd temperature from described the second temperature,
At described the 3rd chamber, when the temperature of described substrate be cooled to described the 3rd temperature during, described the second plasma electrode is driven.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0038603 | 2010-04-26 | ||
| KR1020100038603A KR101129038B1 (en) | 2010-04-26 | 2010-04-26 | In line type substrate processing apparatus |
| PCT/KR2011/003002 WO2011136525A2 (en) | 2010-04-26 | 2011-04-25 | Inline substrate-treating apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102859722A true CN102859722A (en) | 2013-01-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180021270.5A Pending CN102859722A (en) | 2010-04-26 | 2011-04-25 | Inline substrate-treating apparatus |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2013530514A (en) |
| KR (1) | KR101129038B1 (en) |
| CN (1) | CN102859722A (en) |
| TW (1) | TW201203374A (en) |
| WO (1) | WO2011136525A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107210200A (en) * | 2015-03-25 | 2017-09-26 | 住友化学株式会社 | Lining processor and Method of processing a substrate |
| CN111850518A (en) * | 2020-07-21 | 2020-10-30 | 上海理想万里晖薄膜设备有限公司 | Tray preheating cavity and corresponding PECVD equipment |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101371709B1 (en) * | 2012-09-24 | 2014-03-07 | 주식회사 선익시스템 | Preprocessing system for substrate |
| CN104704624B (en) | 2012-10-09 | 2017-06-09 | 应用材料公司 | Has the series connection processing substrate instrument of index |
| KR101446132B1 (en) * | 2012-12-24 | 2014-10-06 | 엘아이지에이디피 주식회사 | Apparatus for processing substrate |
| KR101392491B1 (en) * | 2012-12-24 | 2014-05-27 | 엘아이지에이디피 주식회사 | Apparatus for processing substrate |
| KR20150144585A (en) | 2014-06-17 | 2015-12-28 | 엘지전자 주식회사 | Post-processing apparatus of solar cell |
| KR101713196B1 (en) * | 2015-06-30 | 2017-03-09 | 주식회사 테라세미콘 | In-line type heat treatment apparatus |
| JP6529914B2 (en) * | 2016-01-05 | 2019-06-12 | 住重アテックス株式会社 | HYDROGEN PLASMA PROCESSING APPARATUS AND HYDROGEN PLASMA PROCESSING METHOD |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3211356B2 (en) * | 1992-04-22 | 2001-09-25 | 株式会社島津製作所 | In-line type plasma CVD equipment |
| KR100691875B1 (en) * | 2005-03-25 | 2007-03-09 | 최진문 | Cleaning apparatus for dielectrics by atmospheric pressure plasma |
| KR100979189B1 (en) * | 2007-12-20 | 2010-08-31 | 다이나믹솔라디자인 주식회사 | Consecutive substrate processing system |
-
2010
- 2010-04-26 KR KR1020100038603A patent/KR101129038B1/en active IP Right Grant
-
2011
- 2011-04-25 WO PCT/KR2011/003002 patent/WO2011136525A2/en active Application Filing
- 2011-04-25 TW TW100114278A patent/TW201203374A/en unknown
- 2011-04-25 CN CN201180021270.5A patent/CN102859722A/en active Pending
- 2011-04-25 JP JP2013507876A patent/JP2013530514A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107210200A (en) * | 2015-03-25 | 2017-09-26 | 住友化学株式会社 | Lining processor and Method of processing a substrate |
| CN111850518A (en) * | 2020-07-21 | 2020-10-30 | 上海理想万里晖薄膜设备有限公司 | Tray preheating cavity and corresponding PECVD equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011136525A2 (en) | 2011-11-03 |
| TW201203374A (en) | 2012-01-16 |
| JP2013530514A (en) | 2013-07-25 |
| KR101129038B1 (en) | 2012-03-27 |
| WO2011136525A3 (en) | 2012-01-26 |
| KR20110119098A (en) | 2011-11-02 |
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