CN108735898B - 一种阻变层自选通阻变存储器及其构建方法与应用 - Google Patents
一种阻变层自选通阻变存储器及其构建方法与应用 Download PDFInfo
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- CN108735898B CN108735898B CN201810501815.6A CN201810501815A CN108735898B CN 108735898 B CN108735898 B CN 108735898B CN 201810501815 A CN201810501815 A CN 201810501815A CN 108735898 B CN108735898 B CN 108735898B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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CN109904313A (zh) * | 2019-03-06 | 2019-06-18 | 天津理工大学 | 一种high-k介质材料新型同质阻变存储器及其制备方法 |
CN111564555B (zh) * | 2020-05-20 | 2022-04-12 | 浙江大学 | 一种改善工作稳定性及存储窗口的阻变存储器及制备方法 |
CN113241404B (zh) * | 2021-03-29 | 2023-05-23 | 天津理工大学 | 基于二维氧化钼/硫化钼叠层结构的自选通器件及其制造方法 |
CN113421964B (zh) * | 2021-06-18 | 2022-07-08 | 复旦大学 | 1s1r型存储器集成结构及其制备方法 |
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CN104810048A (zh) * | 2014-01-28 | 2015-07-29 | 华邦电子股份有限公司 | 电阻式存储装置、电阻式存储装置的操作方法 |
CN105870321A (zh) * | 2016-03-28 | 2016-08-17 | 北京大学 | 一种非线性自整流阻变存储器及其制备方法 |
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US8557632B1 (en) * | 2012-04-09 | 2013-10-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
KR101735187B1 (ko) * | 2015-06-30 | 2017-05-15 | 서울대학교산학협력단 | 가변 저항체, 이를 이용한 비휘발성 메모리 소자 및 이들의 제조 방법 |
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CN104810048A (zh) * | 2014-01-28 | 2015-07-29 | 华邦电子股份有限公司 | 电阻式存储装置、电阻式存储装置的操作方法 |
CN105870321A (zh) * | 2016-03-28 | 2016-08-17 | 北京大学 | 一种非线性自整流阻变存储器及其制备方法 |
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