CN108735880A - A kind of ultraviolet lamp encapsulation structure increasing light emission rate - Google Patents

A kind of ultraviolet lamp encapsulation structure increasing light emission rate Download PDF

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Publication number
CN108735880A
CN108735880A CN201710262477.0A CN201710262477A CN108735880A CN 108735880 A CN108735880 A CN 108735880A CN 201710262477 A CN201710262477 A CN 201710262477A CN 108735880 A CN108735880 A CN 108735880A
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CN
China
Prior art keywords
cover board
ultraviolet lamp
light emission
emission rate
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710262477.0A
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Chinese (zh)
Inventor
丛巍
梁旭东
张国华
周德保
武帅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qingdao Jason Electric Co Ltd
Original Assignee
Qingdao Jason Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qingdao Jason Electric Co Ltd filed Critical Qingdao Jason Electric Co Ltd
Priority to CN201710262477.0A priority Critical patent/CN108735880A/en
Publication of CN108735880A publication Critical patent/CN108735880A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention provides a kind of ultraviolet lamp encapsulation structure increasing light emission rate, including ultraviolet lamp, frame and cover board, and ultraviolet lamp is placed in frame center, frame upper cover cover board, cover board light transmission, and cover board is made of at least two layers number of plies that refraction coefficient continuously decreases from inside to outside.This kind of design method can reduce light by total internal reflection caused by cover board.In addition, cover board light transmission part is concentration structure, concentration structure includes planoconvex spotlight, biconvex lens or concave-convex lens, and narrow upper width under frame endothecium structure, and reflective membrane is coated in frame internal layer.In this way, increasing light emission rate from multi-angle.

Description

A kind of ultraviolet lamp encapsulation structure increasing light emission rate
Technical field
The invention belongs to deep ultraviolet LED encapsulation fields, and in particular to a kind of ultraviolet lamp encapsulation structure increasing light emission rate.
Background technology
UV radiation technology for sterilization is widely used, and broad-spectrum is high, is almost had to all bacteriums, virus Efficient killing effect.Ultraviolet light source extremely lacks, and ultraviolet light source commonly used at present is mainly mercury lamp.And with technology Progress, deep-UV light-emitting diode (LED) progresses into market, has the characteristics that low in energy consumption, long lifespan, free of contamination.Phase For comparing mercury lamp, deep-UV light-emitting diode wavelength can be adjusted by semi-conducting material production technology, and more ring It protects.
In ultraviolet LED in use, the encapsulation of luminescence chip is a step of key, how to improve luminous efficiency is that industry is ground The hot spot studied carefully.The flat single laying of plank covering of generally use is packaged ultraviolet LED in the prior art, as shown in Figure 1, the prior art Usually luminescence chip a is encapsulated into frame b using deep ultraviolet light source made of deep ultraviolet LED, the top setting quartz of frame b Lens c is to adjust light emitting angle.It can be reflected using light when quartz lens c, the refraction coefficient of quartz lens c materials is usual 1.5 or more, and air dielectric refraction coefficient is 1, due to without transition zone, leading to encapsulating material refraction coefficient between them It is single, it causes the lens c angles of total reflection small, light is made greatly cannot to reflect lens c but be reflected back in frame b, generate Prodigious luminous energy waste.
For these reasons, a kind of ultraviolet lamp encapsulation structure that can further increase light emission rate is needed.
Invention content
The present invention provides a kind of ultraviolet lamp encapsulation structure increasing light emission rate, including ultraviolet lamp, frame and cover board, ultraviolet lamp Be placed in frame center, frame upper cover cover board, the cover board light transmission, and cover board by least two layers from inside to outside refraction coefficient gradually drop Low number of plies composition.
Preferably, cover board light transmission part is concentration structure, and the concentration structure includes planoconvex spotlight, biconvex lens or bumps Lens.
Preferably, narrow upper width under frame endothecium structure, and frame internal layer is coated with reflective membrane.
Preferably, the cover board middle position by one or more type combinations in quartz glass, silica gel or resin and At.
Preferably, every layer thickness range of cover board different layers is combined at 100 microns -2 millimeters.
Preferably, it bonds or seals by glue between cover board different layers and press.
Preferably, the cover board is in board-type only covering framework top, or in concave cladding framework upper and side.
Preferably, the cover board, which is sealed with frame by glue, engages.
Preferably, the ultraviolet lamp is deep ultraviolet LED.
The invention has the advantages that and advantageous effect:
The ultraviolet lamp encapsulation structure provided by the invention for increasing light emission rate includes ultraviolet lamp, frame and cover board, and ultraviolet lamp is set In frame center, frame upper cover cover board, cover board light transmission, and cover board is by least two layers layer that refraction coefficient continuously decreases from inside to outside Array at.This kind of design method can reduce light by total internal reflection caused by cover board.In addition, cover board light transmission part is poly- Photo structure, concentration structure include planoconvex spotlight, biconvex lens or concave-convex lens, and narrow upper width under frame endothecium structure, in frame Internal layer is coated with reflective membrane.In this way, increasing light emission rate from multi-angle.
After the detailed description of the application embodiment is read in conjunction with the figure, other features and advantages of the application will become more Add clear.
Description of the drawings
Fig. 1 is ultraviolet LED encapsulating structure schematic diagram in the prior art;
Fig. 2 is the ultraviolet lamp encapsulation structure schematic diagram for the increase light emission rate that present pre-ferred embodiments provide;
Fig. 3 is the ultraviolet lamp encapsulation structure schematic diagram for the increase light emission rate that another embodiment of the present invention provides.
Specific implementation mode
Below in conjunction with drawings and examples, the invention will be further described.
The ultraviolet lamp encapsulation structure provided by the invention for increasing light emission rate, including ultraviolet lamp, frame and cover board, ultraviolet lamp are set In frame center, frame upper cover cover board, cover plate light transmission, and frame material thermal conductivity is good, for example, aluminium nitride.Specifically Ground, cover board are in board-type only covering framework top, or in concave cladding framework upper and side, recessed relative to board-type cover board Type cover board is more advantageous to the seal degree increased between holder and cover board.Meanwhile cover board is sealed by glue with frame and is connect It closes, to further increase air-tightness.In this, the ultraviolet lamp described in the present embodiment is deep ultraviolet LED, in addition, it may further comprise purple Other ultraviolet sources such as outer mercury lamp.
Fig. 2 is the ultraviolet lamp encapsulation structure schematic diagram for the increase light emission rate that present pre-ferred embodiments provide.Such as Fig. 2 institutes Show, cover board 3 is board-type, is placed only in 2 top of frame, and the light that ultraviolet lamp 1 is sent out is reflected outward by cover board 3.In this, cover 3 light transmission part of plate is made of at least two layers number of plies that refraction coefficient continuously decreases from inside to outside.
Specifically, 3 light transmission part of cover board is concentration structure, and concentration structure includes planoconvex spotlight, biconvex lens or concave-convex saturating Mirror, concentration structure is biconvex lens in the present embodiment.3 light transmission part of cover board by quartz glass, silica gel or resin one kind or Multiple types are composed, and in fig. 2, cover board 3 is made of upper layer and lower layer, such as by 32 structure of resin layer 31 and quartz glass layer At wherein the refraction coefficient of resin layer 31 is less than the refraction coefficient of quartz glass layer 32.
In the present embodiment, it can guarantee product quality again simultaneously to reduce fiber-loss, be combined into every layer of cover board different layers Thickness range is between 100 microns -2 millimeters, wherein bonds or seal pressing between cover board different layers by glue.
In addition, frame internal layer is generally square structure, in the present embodiment, narrow upper width under above-mentioned square structure, lateral incision face is in It is trapezoidal, and frame internal layer bottom and side 21 are coated with reflective membrane, specific for example, reflective aluminium film, in this way, increasing in frame The light emission rate of internal layer scattering light.Fig. 2 is referred to, the bottom of ultraviolet lamp 1 is additionally provided with cooling fin 11, and cooling fin 11 is embedded in frame 2 bottoms, while 1 lead of ultraviolet lamp is drawn by frame.
Fig. 3 is the ultraviolet lamp encapsulation structure schematic diagram for the increase light emission rate that another embodiment of the present invention provides.Such as Fig. 3 Shown, the concentration structure of 3 ' light transmission part of cover board is concave-convex lens, including two layers, and the refraction coefficient on upper layer 31 ' is less than lower layer 32 ' Refraction coefficient, in this way, increasing transition zone for outgoing of the light from transparent cover plate to air.
In conclusion the ultraviolet lamp encapsulation structure for the increase light emission rate that preferred embodiment provides through the invention, including purple Outer lamp, frame and cover board, ultraviolet lamp are placed in frame center, frame upper cover cover board, cover board light transmission, and cover board by least two layers from interior The number of plies composition that outside refraction coefficient continuously decreases.This kind of design method can reduce light by complete interior anti-caused by cover board It penetrates.In addition, cover board light transmission part is concentration structure, concentration structure includes planoconvex spotlight, biconvex lens or concave-convex lens, and frame Narrow upper width under endothecium structure is coated with reflective membrane in frame internal layer.In this way, increasing light emission rate from multi-angle.
The above is only the preferred embodiment of the present invention, it is noted that for those skilled in the art For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications should also regard For protection scope of the present invention.

Claims (9)

1. a kind of ultraviolet lamp encapsulation structure increasing light emission rate, including ultraviolet lamp, frame and cover board, ultraviolet lamp are placed in frame Centre, frame upper cover cover board, the cover board light transmission, which is characterized in that cover board by least two layers from inside to outside refraction coefficient gradually drop Low number of plies composition.
2. the ultraviolet lamp encapsulation structure according to claim 1 for increasing light emission rate, which is characterized in that cover board light transmission part is Concentration structure, the concentration structure include planoconvex spotlight, biconvex lens or concave-convex lens.
3. the ultraviolet lamp encapsulation structure according to claim 1 for increasing light emission rate, which is characterized in that under frame endothecium structure Narrow upper width, and frame internal layer is coated with reflective membrane.
4. the ultraviolet lamp encapsulation structure according to claim 1 for increasing light emission rate, which is characterized in that the cover board transmittance section Divide and is formed by one or more type combinations in quartz glass, silica gel or resin.
5. the ultraviolet lamp encapsulation structure according to claim 1 for increasing light emission rate, which is characterized in that be combined into cover board difference Every layer thickness range of layer is at 100 microns -2 millimeters.
6. the ultraviolet lamp encapsulation structure according to claim 1 for increasing light emission rate, which is characterized in that between cover board different layers Pressing is bonded or sealed by glue.
7. the ultraviolet lamp encapsulation structure according to claim 1 for increasing light emission rate, which is characterized in that the cover board is in straight panel Type only covering framework top, or in concave cladding framework upper and side.
8. the ultraviolet lamp encapsulation structure according to claim 7 for increasing light emission rate, which is characterized in that the cover board and frame It is sealed engagement by glue.
9. the ultraviolet lamp encapsulation structure according to claim 1 for increasing light emission rate, which is characterized in that the ultraviolet lamp is deep Ultraviolet LED.
CN201710262477.0A 2017-04-21 2017-04-21 A kind of ultraviolet lamp encapsulation structure increasing light emission rate Pending CN108735880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710262477.0A CN108735880A (en) 2017-04-21 2017-04-21 A kind of ultraviolet lamp encapsulation structure increasing light emission rate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710262477.0A CN108735880A (en) 2017-04-21 2017-04-21 A kind of ultraviolet lamp encapsulation structure increasing light emission rate

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CN108735880A true CN108735880A (en) 2018-11-02

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113384105A (en) * 2021-07-19 2021-09-14 中国科学院长春光学精密机械与物理研究所 Ultraviolet sterilizing mattress

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080030369A (en) * 2006-09-30 2008-04-04 한국 고덴시 주식회사 Ultraviolet led
CN105390592A (en) * 2015-12-16 2016-03-09 江苏稳润光电有限公司 Three-layer packaging method for ultraviolet LED light source
JP2016111085A (en) * 2014-12-03 2016-06-20 株式会社トクヤマ Ultraviolet light-emitting element package
CN206806367U (en) * 2017-04-21 2017-12-26 青岛杰生电气有限公司 A kind of ultraviolet lamp encapsulation structure for increasing light emission rate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080030369A (en) * 2006-09-30 2008-04-04 한국 고덴시 주식회사 Ultraviolet led
JP2016111085A (en) * 2014-12-03 2016-06-20 株式会社トクヤマ Ultraviolet light-emitting element package
CN105390592A (en) * 2015-12-16 2016-03-09 江苏稳润光电有限公司 Three-layer packaging method for ultraviolet LED light source
CN206806367U (en) * 2017-04-21 2017-12-26 青岛杰生电气有限公司 A kind of ultraviolet lamp encapsulation structure for increasing light emission rate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113384105A (en) * 2021-07-19 2021-09-14 中国科学院长春光学精密机械与物理研究所 Ultraviolet sterilizing mattress

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Application publication date: 20181102