CN108735879A - A kind of SMD encapsulating structures containing quantum dot - Google Patents
A kind of SMD encapsulating structures containing quantum dot Download PDFInfo
- Publication number
- CN108735879A CN108735879A CN201810840796.XA CN201810840796A CN108735879A CN 108735879 A CN108735879 A CN 108735879A CN 201810840796 A CN201810840796 A CN 201810840796A CN 108735879 A CN108735879 A CN 108735879A
- Authority
- CN
- China
- Prior art keywords
- smd
- quantum dot
- holders
- water oxygen
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 53
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 44
- 239000001301 oxygen Substances 0.000 claims abstract description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 22
- 239000011241 protective layer Substances 0.000 claims abstract description 21
- 239000003292 glue Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000741 silica gel Substances 0.000 claims description 12
- 229910002027 silica gel Inorganic materials 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000006071 cream Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920002799 BoPET Polymers 0.000 claims description 2
- 238000005253 cladding Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 3
- 238000002955 isolation Methods 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- -1 PCT Chemical compound 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of SMD encapsulating structures containing quantum dot; including SMD holders; the flip LED chips being fixed in the SMD holders; quantum dot protective layer that is in the flip LED chips upper surface and carrying out water oxygen barrier protection to quanta point material is set, and is filled in the white glue that will be coated in the cavity of the SMD holders and around the quantum dot protective layer and LED chip.Quanta point material and flip LED chips are combined post package in SMD holders by the SMD encapsulating structures of the present invention, refill white glue；It is not only the environment that quanta point material provides isolation water oxygen, and improves the light extraction homogeneity of integral device, solves the problems, such as that quanta point material stability and power are too low in traditional technology, to considerably reduce cost.
Description
Technical field
The invention belongs to technical field of LED illumination.More particularly, to a kind of SMD encapsulating structures containing quantum dot.
Background technology
As technology development is more and more rapider, electronic product update iteration speed is getting faster, liquid of the people to high quality
Brilliant display demand is also more and more urgent, so, it would be highly desirable to a kind of new technical method meets people's demand, existing fluorescent powder LED
Backlight is more difficult for promoting colour gamut due to being limited by material property.Quantum dot is as a kind of novel semi-conductor nano material
(being usually made of IIIB-VB or IIB-VIB elements) has good excitation spectrum width, monochromaticjty, glow peak Wavelength tunable, conversion effect
Rate is high, and advantage is had more compared with current fluorescent powder scheme, however, existing quanta point material water oxygen stability is poor, under conventional encapsulation
Fail fast, short life, is unable to normal use in product.For example, the formal dress quantum dot LED encapsulation used on the market at present is not only
Stability and reliability are poor, and power is too low after quantum dot encapsulation；Suitability is low after quantum dot encapsulation.
Invention content
In order to solve the above technical problems, it is an object of the present invention to provide a kind of, the SMD encapsulation containing quantum dot is tied
Structure.
In order to achieve the above objectives, the present invention uses following technical scheme：
A kind of SMD encapsulating structures containing quantum dot, including SMD holders, the flip LED being fixed in the SMD holders
Quantum point protection in the flip LED chips upper surface and that water oxygen barrier protection is carried out to quanta point material is arranged in chip
Layer, and be filled in the cavity of the SMD holders and will be coated around the quantum dot protective layer and LED chip
White glue.
Preferably, the quantum dot film in the flip LED chips upper surface, Yi Jishe is arranged in the quantum dot protective layer
It sets the first water oxygen in the quantum dot film upper surface and obstructs film layer.
Preferably, the quantum dot protective layer includes the first water oxygen barrier being arranged in the flip LED chips upper surface
Film layer is located at the second water oxygen above first water oxygen barrier film layer and obstructs film layer, and setting is hindered in first water oxygen
Quantum dot film between membrane layer and the second water oxygen barrier film layer.
Preferably, the SMD holders are the internal holders with multiple boss for being used to support the flip LED chips.
Preferably, between the flip LED chips and the SMD cradle bottom surfaces be equipped with for connect flip LED chips and
The welding layer of SMD holders；The material of the welding layer is tin cream or eutectic material.
Preferably, the copper stent of the SMD holders, silver-colored holder, nickel holder, PCT holders, PPA holders or EMC holders.
Preferably, the flip LED chips and the quantum dot protective layer are by bonding the viscous of silica gel or other translucency
Gum deposit connects.
Preferably, the quantum film be film layer that quanta point material and silica gel are mixed to form or quanta point material, it is glimmering
The film layer that light powder and silica gel are formed.
Preferably, the thickness of the quantum dot film layer is 10-300 microns, the thickness of the first water oxygen barrier film layer
It it is 50-300 microns, the thickness of the second water oxygen barrier film layer is 50-300 microns.
Preferably, the first water oxygen barrier film layer or the second water oxygen barrier film layer are PET film layer or other materials film layer.
Due to containing SiO in the white glue of the present invention2Or TiO2Equal ingredients, therefore the white glue after solidification has high compactness
Feature can stop that water oxygen penetrates, to realize protection well to the quanta point material of quantum dot protective layer.
Beneficial effects of the present invention are as follows：
Quanta point material protective layer and flip LED chips are combined post package in SMD branch by the SMD encapsulating structures of the present invention
In frame, white glue is refilled；It is not only the environment that quanta point material provides isolation water oxygen, and improves the light extraction of integral device
Homogeneity solves the problems, such as that quanta point material stability and power are too low in traditional technology, to considerably reduce cost.
Description of the drawings
Specific embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.
Fig. 1 shows the schematic diagram of SMD encapsulating structures in second of embodiment of the invention；Wherein, figure (a) and (b) point
SMD encapsulating structures vertical view and front view are not shown.
Fig. 2 shows the schematic diagrames of SMD encapsulating structures in the third embodiment of the invention；Wherein, figure (a) and (b) point
SMD encapsulating structures vertical view and front view are not shown.
Wherein, the 1, first water oxygen obstructs film layer, 2, quantum dot film, 3, flip LED chips, 4, welding layer, 5, white glue, 6,
SMD holders, the 7, second water oxygen obstruct film layer, and 8, boss.
Specific implementation mode
In order to illustrate more clearly of the present invention, the present invention is done further with reference to preferred embodiments and drawings
It is bright.It will be appreciated by those skilled in the art that specifically described content is illustrative and be not restrictive below, it should not be with this
It limits the scope of the invention.
In the first embodiment of the present invention, a kind of SMD encapsulating structures containing quantum dot, including SMD holders 6,
Quantum in 3 upper surface of flip LED chips and containing quanta point material is arranged in the flip LED chips 3 being fixed in SMD holders 6
Point protection layer, and be filled in the cavity of SMD holders 6 and quantum dot protective layer and 3 surrounding of flip LED chips are wrapped
The white glue 5 covered.
In embodiments of the present invention, in order to improve the light emission rate of SMD encapsulating structures, and flip LED chips 3 are limited
Displacement；Preferably, SMD holders 6 are internally provided with multiple boss 8 for being used to support flip LED chips 3.The present invention is to boss 8
Shape and quantity do not do any restriction, as long as the technical problem of the present invention can be solved.
In embodiments of the present invention, it is equipped between flip LED chips 3 and the bottom surface of SMD holders 6 for connecting upside-down mounting
The welding layer 4 of LED chip 3 and SMD holders 6.The material of welding layer is tin cream or eutectic material.
In embodiments of the present invention, the material of SMD holders 6 can be, but not limited to one kind or several in following material
Kind：Copper, silver, nickel, PCT, PPA, EMC.
Flip LED chips 3 are with quantum dot protective layer by bonding silica gel or other bonding glue connections with translucency.Amount
Son point film 2 is the film of the film layer that quanta point material is mixed to form with silica gel or quanta point material, fluorescent powder and silica gel formation
Layer.
In second of embodiment of the present invention, as shown in Fig. 1 (a) and Fig. 1 (b), a kind of amount of concrete structure is provided
Sub- point protection layer；Quantum dot protective layer includes that the first water oxygen being arranged in 3 upper surface of flip LED chips obstructs film layer 1, is located at the
The second water oxygen that one water oxygen obstructs 1 top of film layer obstructs film layer 7, and setting obstructs film layer 1 and the second water oxygen in the first water oxygen
Obstruct the quantum dot film 2 between film layer 7.The thickness of quantum dot film is 10-300 microns, and first water oxygen obstructs film layer
Thickness be 50-300 micron, the thickness of second water oxygen barrier film layer is 50-300 microns.Other knots of SMD encapsulating structures
Structure part is same as above.
In the third embodiment of the present invention, as shown in Fig. 2 (a) and Fig. 2 (b), a kind of amount of concrete structure is provided
Sub- point protection layer；Quantum dot protective layer includes the quantum dot film 2 being arranged in 3 upper surface of flip LED chips, and setting is being measured
First water oxygen of son point 2 upper surface of film obstructs film layer 1.
Quantum dot protective layer and flip LED chips 3 are combined post package in SMD holders 6 by the SMD encapsulating structures of the present invention
It is interior, refill white glue 5；It is not only the environment that quantum dot provides isolation water oxygen, and the light extraction for improving integral device is uniform
Property, solve the problems, such as that quanta point material stability and power are too low in traditional technology, to considerably reduce cost.
In the 4th kind of embodiment of the present invention, a kind of preparation method of the SMD encapsulating structures containing quantum dot is provided,
Include the following steps：
1) LED chip of upside-down mounting is fixed on by tin cream in SMD holders, and is the electrode and SMD branch of flip LED chips
The electrode conduction of frame；
2) quanta point material of specific wavelength and silica gel are uniformly mixed in suitable ratio, obtain quantum dot film material；
Quantum dot film material is coated in the first water oxygen barrier film layer so that it is thin that the first water oxygen obstructs formation quantum dot in film layer
Film；The second water oxygen barrier film layer is being covered on the quantum dot film, is then obtaining quantum dot protective layer through overbaking；It is using
Quantum dot protective layer can be cut into required size in the process；
3) upper surface of flip LED chips is connect with quantum dot protective layer by silica gel, and baking makes it in an oven
The silica gel of junction cures；
4) remaining space fills white glue and white glue is made to be coated on quantum dot protective layer and LED chip in SMD holders
Around but do not include the upper surface of quantum dot protective layer, then dry enclosed package the SMD encapsulating structures containing quantum dot.
The first water oxygen of SMD encapsulating structures barrier film layer, the second water oxygen barrier film layer and the white glue of the present invention all has very well
Seal, preferably obstructed the water oxygen etc. in air, to carry out good enclosed package to internal quanta point material,
Improve the reliability of device.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention may be used also on the basis of the above description for those of ordinary skill in the art
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is every to belong to this hair
Row of the obvious changes or variations that bright technical solution is extended out still in protection scope of the present invention.
Claims (10)
1. a kind of SMD encapsulating structures containing quantum dot, which is characterized in that including SMD holders, be fixed in the SMD holders
Flip LED chips, be arranged it is in the flip LED chips upper surface and to quanta point material carry out water oxygen barrier protection amount
Sub- point protection layer, and be filled in the cavity of the SMD holders and by around the quantum dot protective layer and LED chip into
The white glue of row cladding.
2. SMD encapsulating structures according to claim 1, which is characterized in that the quantum dot protective layer includes being arranged in institute
The quantum dot film of flip LED chips upper surface is stated, and the first water oxygen barrier in the quantum dot film upper surface is set
Film layer.
3. SMD encapsulating structures according to claim 2, which is characterized in that the quantum dot protective layer includes being arranged in institute
State the first water oxygen barrier film layer of flip LED chips upper surface, the second water oxygen being located above first water oxygen barrier film layer
Film layer is obstructed, and is arranged and obstructs the quantum dot film between film layer and the second water oxygen barrier film layer in first water oxygen.
4. SMD encapsulating structures according to claim 1, which is characterized in that the SMD holders, which are inside, has multiple be used for
Support the holder of the boss of the flip LED chips.
5. SMD encapsulating structures according to claim 1, which is characterized in that the flip LED chips and the SMD holders
The welding layer for connecting flip LED chips and SMD holders is equipped between bottom surface；The material of the welding layer is tin cream or eutectic
Material.
6. SMD encapsulating structures according to claim 4, which is characterized in that the copper stent of the SMD holders, silver-colored holder, nickel
Holder, PCT holders, PPA holders or EMC holders.
7. SMD encapsulating structures according to claim 1, which is characterized in that the flip LED chips are protected with the quantum dot
The bonding glue connection that sheath passes through bonding silica gel or other translucency.
8. SMD encapsulating structures according to claim 2 or 3, which is characterized in that the quantum dot film is quanta point material
The film layer that film layer or quanta point material, fluorescent powder and the silica gel being mixed to form with silica gel are formed.
9. SMD encapsulating structures according to claim 3, which is characterized in that the thickness of the quantum dot film is 10-300
The thickness of micron, the first water oxygen barrier film layer is 50-300 microns, and the thickness of the second water oxygen barrier film layer is 50-
300 microns.
10. SMD encapsulating structures according to claim 9, which is characterized in that the first water oxygen barrier layer or the second water oxygen
It is PET film layer or other materials film layer to obstruct film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810840796.XA CN108735879A (en) | 2018-07-26 | 2018-07-26 | A kind of SMD encapsulating structures containing quantum dot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810840796.XA CN108735879A (en) | 2018-07-26 | 2018-07-26 | A kind of SMD encapsulating structures containing quantum dot |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108735879A true CN108735879A (en) | 2018-11-02 |
Family
ID=63941911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810840796.XA Pending CN108735879A (en) | 2018-07-26 | 2018-07-26 | A kind of SMD encapsulating structures containing quantum dot |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108735879A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111192947A (en) * | 2018-11-14 | 2020-05-22 | 易美芯光（北京）科技有限公司 | Quantum dot LED packaging device and manufacturing method |
| WO2020181569A1 (en) * | 2019-03-08 | 2020-09-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel manufacturing method, display panel, and electronic device |
| WO2022257129A1 (en) * | 2021-06-11 | 2022-12-15 | 江苏新云汉光电科技有限公司 | Package structure for reducing quantum dot decay, and method therefor |
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