CN102130236A - Packaging method of LED (light-emitting diode) chip and packaging device - Google Patents
Packaging method of LED (light-emitting diode) chip and packaging device Download PDFInfo
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- CN102130236A CN102130236A CN2010106200484A CN201010620048A CN102130236A CN 102130236 A CN102130236 A CN 102130236A CN 2010106200484 A CN2010106200484 A CN 2010106200484A CN 201010620048 A CN201010620048 A CN 201010620048A CN 102130236 A CN102130236 A CN 102130236A
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Abstract
The invention relates to a packaging method of an LED (light-emitting diode) chip and a packaging device, wherein the method comprises the following steps: the LED chip is fixed on a substrate; the top of the LED chip is injected with transparent packaging materials with a set amount, and a first transparent layer of the LED chip is formed by curing; at least two types of packaging materials containing fluorescent powder which can be excited by the LED chip to generate set spectrums are injected onto the outer surface of the first transparent layer; and by curing, each packaging material of the fluorescent powder forms a fluorescent powder layer for packaging the LED chip respectively. By the technical scheme, in the invention, the problem of low light-emitting quality of the LED device in the prior art can be solved.
Description
Technical field
The present invention relates to the luminescent device technical field, relate in particular to a kind of method for packing and packaging of led chip.
Background technology
Along with the continuous growth of the LED light-emitting diode market demand and new appearance in succession of using, the encapsulation technology of LED is had higher requirement, being encapsulated in of LED improve the LED performance and reduce cost on play very big effect.Such as white light LED part, the white light LED part illumination has become a big hot topic industry of our times economy, the method that produces white light LED part has multiple, what wherein generally adopt is that blue-light LED chip excites yellow fluorescent powder, perhaps the blue led chip excites yellow fluorescent powder to mix the one encapsulating material that the back forms with red fluorescence powder, perhaps the ultraviolet leds chip excites indigo plant, green, the method of red three primary colors fluorescent powder, and the fluorescent material paint-on technique that is adopted mainly is that phosphor powder is mixed according to a certain ratio with colloid (as silica gel or epoxy resin etc.), make the powder slurry, stir, with fine needle head class instrument it directly is coated on the surface of led chip then.
Because at lighting field, to the quality of LED device bright dipping (as, colour temperature, color rendering index) very high requirement is arranged, therefore, there are many defectives in the current method for packing that generally adopts: lack ruddiness in the curve of spectrum that excites yellow fluorescent powder to obtain as blue-light LED chip, cause color rendering index lower; Excite yellow fluorescent powder to mix the integrated powder body material that the back forms with red fluorescence powder as the blue led chip, perhaps the ultraviolet leds chip excites the method for indigo plant, green, red three primary colors fluorescent powder, density difference because of different colours fluorescent material, in the process of the integrated powder body material of preparation, very easily cause the powder skewness, cause non-uniform light, the problem that color rendering index is lower; Owing to phosphor powder layer is heated too closely easily with the chip distance the photochromic conversion efficiency of fluorescent material is reduced in addition.
Summary of the invention
The invention provides a kind of method for packing and packaging of led chip, solve the low-quality problem of LED device bright dipping in the prior art.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of method for packing of led chip comprises:
Led chip is fixed on the substrate;
The transparent encapsulating material of setting dosage is injected at top at described led chip, and through solidifying to form first hyaline layer of the described led chip of encapsulation;
At least two kinds of setting dosage are contained the outer surface that the encapsulating material that can be excited by described led chip and produce the fluorescent material of setting spectrum is injected into described first hyaline layer successively, through solidifying, described every kind of each self-forming of fluorescent material encapsulating material encapsulates the phosphor powder layer of described led chip.
When described led chip was blue-light LED chip, the fluorescent material encapsulating material that injects at the described first hyaline layer outer surface was: can be excited the fluorescent material encapsulating material that produces gold-tinted and can be excited the fluorescent material encapsulating material that produces ruddiness by described blue-light LED chip by described blue-light LED chip; When described led chip is the ultraviolet leds chip, the fluorescent material encapsulating material that injects at the described first hyaline layer outer surface is: can be excited the fluorescent material encapsulating material that produces ruddiness by described ultraviolet leds chip, can be excited by described ultraviolet leds chip and produce the fluorescent material encapsulating material of green glow and can be excited by described ultraviolet leds chip and produce the fluorescent material encapsulating material of blue light.
The peak of described first hyaline layer exceeds described led chip and is no more than 1mm.
The refractive index of a plurality of encapsulated layers that form on described led chip surface is successively decreased from inside to outside successively.
Before injecting the fluorescent material encapsulating material, also be included on the described substrate and grow around the projection of each phosphor powder layer forming area.
The method of growth projection comprises on substrate: any in deposit, oxidation, sputter, Reflow Soldering, plating or the silk screen printing, the material of described projection comprises metal, silicide, oxide, tin cream or silica gel, and the flat shape of described projection comprises any in circle, the square or polygon.
A kind of LED packaging, comprise the led chip that when applying electric current, is used to produce light, as the substrate of described led chip substrate, also comprise: encapsulate first hyaline layer of described led chip and at the described first hyaline layer outer surface two or more phosphor powder layers of moulding successively.
Described led chip is a blue-light LED chip, and described phosphor powder layer comprises and can be excited by described blue-light LED chip and produce the phosphor powder layer of gold-tinted and can be excited by described blue-light LED chip and produce the phosphor powder layer of ruddiness; Described led chip is the ultraviolet leds chip, described phosphor powder layer comprise can be excited by described ultraviolet leds chip and produce ruddiness phosphor powder layer, can be excited by described ultraviolet leds chip and produce the phosphor powder layer of green glow and can be excited by described ultraviolet leds chip and produce the phosphor powder layer of blue light.
Described encapsulating material is silica gel, epoxy resin or silicone grease.
Also comprise: grow on the described substrate, around the projection of each phosphor powder layer forming area.
The invention provides a kind of method for packing and LED packaging of led chip, this method is before forming phosphor powder layer on the led chip, at first form first hyaline layer, compared to existing technology with phosphor powder with after colloid mixes according to a certain ratio, directly be coated on the surface of led chip, this method has solved the problem that phosphor powder layer reduces the photochromic conversion efficiency of fluorescent material with chip apart from too closely being heated easily; This method also separately is injected into the outer surface of first hyaline layer successively by the fluorescent material encapsulating material that will set spectrum, and the two-layer or two-layer above phosphor powder layer of curing molding, efficiently solve that the encapsulation of monochromatic fluorescent material causes the lower problem of its color rendering in the prior art, also solved simultaneously in the prior art and to have applied together after fluorescent material with different colours is mixed into integrated powder body material, the fluorescent material skewness, cause LED device non-uniform light, the problem that color rendering index is lower.
Description of drawings
Fig. 1 is the schematic diagram of embodiment of the invention LED packaging;
Fig. 2 is the flow chart of embodiment of the invention LED method for packing;
Fig. 3 a is the vertical view of the LED packaging of two circular protrusions of the embodiment of the invention;
Fig. 3 b is the vertical view of the LED packaging of two circular protrusions of another embodiment of the present invention;
Fig. 3 c is the vertical view figure of the LED packaging of two circular protrusions of another embodiment of the present invention;
Fig. 4 is the vertical view of the LED packaging of two square projectioies of another embodiment of the present invention;
Fig. 5 is the schematic diagram of embodiment of the invention led array encapsulation.
Embodiment
In conjunction with the accompanying drawings the present invention is described in further detail below by embodiment.
Embodiment one:
Fig. 1 is the schematic diagram of embodiment of the invention LED packaging, please refer to Fig. 1, can know in the LED packaging of the embodiment of the invention to comprise: wafer 1, protruding 12a, protruding 12b, the first hyaline layer 13a, yellow fluorescence bisque 13b, red fluorescence bisque 13c, blue chip 14, soldered ball 15 and conductive layer 16.Blue chip 14 refers to produce the led chip of blue light when applying electric current, wafer 11 is as the substrate of blue chip 14, and the substrate that is used as substrate is not limited to wafer, can also be with pcb board, BT plate, glass plate, ceramic wafer or plastic plate as substrate; The first hyaline layer 13a selects for use the relatively large silica gel of refractive index of setting dosage to form as encapsulation material solidifies; Yellow fluorescence bisque 13b is by the yellow fluorescent powder of pre-configured setting dosage and silica gel is mixing cured forms; Red fluorescence bisque 13c is by pre-configured red fluorescence powder and silica gel is mixing cured forms, in the present embodiment, yellow fluorescent powder refers to that the light wave peak scope that its back that is excited is sent out is 570nm-600nm, and the light wave peak scope of sending out after red fluorescence powder refers to be excited is 620nm-760nm; Above-mentioned two-layer phosphor powder layer corresponding to present embodiment, present embodiment on wafer 11, the grow protruding 12a and the 12b of two concentric annulars, projection 12b is around the forming area of yellow fluorescence bisque 13b, be used to define the forming area of yellow fluorescence bisque 13b, projection 12a is around the forming area of red fluorescence bisque 13c, be used to define the forming area of red fluorescence bisque 13c, blue chip 14 is positioned at by protruding 12a, in the zone that 12b defines, preferably be positioned at the first hyaline layer 13a, the center of the forming area of yellow fluorescence bisque 13b and red fluorescence bisque 13c; Conductive layer 16 is produced on the wafer 11 in advance, and soldered ball 15 is used for blue chip 14 upside-down mountings at conductive layer 16.
Introduce the making flow process of LED packaging in the embodiment of the invention below in detail, see also Fig. 2, Fig. 2 is the flow chart of embodiment of the invention LED method for packing:
S11, make the insulating barrier (not shown) on wafer 11, precipitation conductive layer 16 on insulating barrier forms salient point soldered ball 15 on conductive layer 16 and blue chip 14.Wherein, substrate is not limited to wafer, can also be with pcb board, BT plate, glass plate, ceramic wafer or plastic plate as substrate, the material of conductive layer 16 selects self focusing to have aluminium, silver, copper, platinum, nickel or its alloy material of high reflectance, and the material of soldered ball 15 can be homogenous material, multilayer material, alloy or non-all-metal materials such as gold, copper, tin.
S12, adopt the method for deposit on wafer 11, the grow protruding 12a and the 12b of two concentric annulars, will be used to define the forming area of phosphor powder layer as the retention device of phosphor powder layer in the encapsulation process next.Wherein, the flat shape of projection 12a and 12b can be circular, square, polygon equidimension such as width, highly, diameter etc. can control by deposition process, manufacture method has technologies such as vapor deposition process, oxidation technology, sputter, Reflow Soldering, plating, silk screen printing, and manufacturing materials can be metal, silicide, oxide, tin cream, silica gel etc.
S13, blue chip 14 is connected on the conductive layer 16 by soldered ball 15 flip chip bondings, the protruding 12a that blue chip 14 is formed among the S12 and 12b institute around, and be arranged in the lens forming area that this two projection is defined, preferably be positioned at the center of the lens forming area that this two projection defined.
S14, the viscosity of selecting doses for use is lower and silica gel that refractive index (n1, scope is 1.4＜n1＜2) is bigger as encapsulating material, be injected into the top of blue chip 14 by needle tubing.This layer injection be a spot of silica gel.
S15, according to the silica gel character and the actual needs that adopt, adopt modes such as ultraviolet irradiation, heating or high-temperature baking to solidify this encapsulating material to a certain degree, make it form the first hyaline layer 13a of this blue chip 14 of encapsulation.Usually curing temperature is at 110 ℃-150 ℃, the formed first hyaline layer 13a is very thin one deck, the distance that its peak exceeds this blue chip 14 preferably is no more than 1mm, the formed first hyaline layer 13a of this step effectively separates fluorescent material with chip, reducing the influence of chip heating to fluorescent material, simultaneously, is that the bigger silica gel of refractive index is as encapsulating material because it adopted, can form refractive index gradient with the phosphor powder layer of the low-refraction of follow-up formation, thereby improve light extraction efficiency.
S16, pre-configured mixed the outer surface that the yellow fluorescent powder encapsulating material that forms drips to the first hyaline layer 13a that forms among the step S15 by a certain percentage by yellow fluorescent powder and silica gel by needle tubing.The refractive index n 2 of the silica gel that this step is used, scope is 1.4＜n2＜2.0, satisfies n2＜n1.
S17, yellow fluorescent powder encapsulating material are centered on by protruding 12b, according to the silica gel character and the actual needs that adopt, adopt modes such as ultraviolet irradiation, heating or high-temperature baking to solidify this yellow fluorescent powder encapsulating material, make it form yellow fluorescence bisque 13b to a certain degree.The height of yellow fluorescence bisque 13b can pass through the size and dimension of previously prepared protruding 12b, and the volume of the yellow fluorescent powder encapsulating material that is injected is regulated.
S18, pre-configured mixed the outer surface that the red fluorescence powder encapsulating material that forms drips to the yellow fluorescence bisque 13b that forms among the step S16 by a certain percentage by red fluorescence powder and silica gel by needle tubing, refractive index (the n3 of this layer silica gel, scope is 1.4＜n3＜2.0), satisfy n3＜n2＜n1).
S19, red fluorescence powder encapsulating material are centered on by protruding 12a, according to the silica gel character and the actual needs that adopt, adopt modes such as ultraviolet irradiation, heating or high-temperature baking to solidify this red fluorescence powder encapsulating material, make it form red fluorescence bisque 13c to a certain degree.The height of red fluorescence bisque 13c can pass through the size and dimension of previously prepared protruding 12a, and the volume of the red fluorescence powder encapsulating material that is injected is regulated.
In the present embodiment, can be excited by led chip and produce the fluorescent material of setting spectrum and comprise and to be excited by led chip and produce the fluorescent material of setting light wave peak scope etc., packed in the present embodiment is blue-light LED chip, can select the yellow fluorescent powder of the light wave peak scope 570nm-600nm that the back that is excited sends out and the light wave peak scope that the back that is excited is sent out for use is the red fluorescence powder of 620nm-760nm, yellow fluorescence bisque 13b finishes the most important one deck of photochromic conversion, so yellow fluorescent powder concentration is big slightly, red fluorescence bisque 13c compensates the ruddiness in the spectrum, so red fluorescence powder concentration is less, be unlikely to obviously to reduce light extraction efficiency.In the present embodiment, preferably the outer surface at the first hyaline layer 13a injects yellow fluorescent powder encapsulating material formation yellow fluorescence bisque 13b earlier, on yellow fluorescence bisque 13b, inject the red fluorescence powder encapsulating material again, form red fluorescence bisque 13c, also can inject the red fluorescence powder encapsulating material earlier at the outer surface of the first hyaline layer 13a, form red fluorescence bisque 13c earlier, the outer surface at red fluorescence bisque 13c injects the yellow fluorescent powder encapsulating material again, forms yellow fluorescence bisque 13b.The manufacture method of the first hyaline layer 13a can be in the present embodiment, the dosage of control transparent encapsulation material makes its automatic moulding be encapsulated into this blue chip just, and the distance that peak exceeds this blue-light LED chip preferably is no more than 1mm, the projection of also can growing separately on wafer is used to define the forming area of this first hyaline layer 13a.The encapsulating material that present embodiment is selected for use is not limited to silica gel, can also be epoxy resin or silicone grease, and the fluorescent material encapsulating material also is not limited to the mixture of fluorescent material and silica gel, can also be the mixture of fluorescent material and epoxy resin or fluorescent material and silicone grease.Silica gel preferably, good because of the degree of adhesion height of silica gel, good airproof performance, thermal conductivity than epoxy resin height, thermal diffusivity, can absorb the inner tension force of encapsulation, last lens may be molded to dome-type, the light emission rate and the light type that have improved lens are optimized, and the durability of silica gel and transparency height, can be for led chip provide essential durability and transparency, silica gel can also adapt to the Reflow Soldering high-temperature technology, has reduced the cost of lens moulding.Present embodiment also can add light trigger and even the mixing to quicken the curing of encapsulating material at the encapsulating material that injects.In the present embodiment, making, the installation of chip and the sealing moulding process of lens of projection are all carried out on wafer, and need not by extra mould, and this method also can adapt to the LED wafer-level packaging.
Certainly, light conversion requirement according to LED, the encapsulation blue-light LED chip can be selected other two kinds, the color more than three kinds or three kinds for use, correspondingly form phosphor powder layers two-layer, more than three layers or three layers, accordingly, the projection that is used to define the phosphor powder layer forming area can be one, two or more.Packed in the practical application can be blue-light LED chip, it also can be the ultraviolet leds chip, when packed be the ultraviolet leds chip, can select for use excited by this ultraviolet leds chip and produce ruddiness the fluorescent material encapsulating material, can be excited by this ultraviolet leds chip and produce the fluorescent material encapsulating material of green glow and can be excited by this ultraviolet leds chip and the fluorescent material encapsulating material that produces blue light is made three layers of phosphor powder layer, these three layers of phosphor powder layers order from inside to outside preferably: blue phosphor layer, green phosphor layer, red fluorescence bisque; Perhaps, can select for use and be excited by this ultraviolet leds chip and produce the fluorescent material encapsulating material of ruddiness, can be excited by this ultraviolet leds chip and produce the fluorescent material encapsulating material of green glow, can be excited by this ultraviolet leds chip and produce the fluorescent material encapsulating material of blue light and can be excited by this ultraviolet leds chip and the fluorescent material encapsulating material that produces gold-tinted is made four layers of phosphor powder layer, these four layers of phosphor powder layers order from inside to outside is preferably: blue phosphor layer, green phosphor layer, the yellow fluorescence bisque, the red fluorescence bisque, encapsulation ultraviolet leds chip can be selected other two kinds for use, color more than three kinds or three kinds, correspondingly form two-layer, phosphor powder layer more than three layers or three layers, accordingly, the projection that is used to define the phosphor powder layer forming area can be one, two or more.
In the present embodiment with on wafer 11 growth two circular protrusions 12a, 12b is an example, please refer to Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 3 a is the vertical view of the LED packaging of two circular protrusions of the embodiment of the invention, Fig. 3 b is the vertical view of the LED packaging of two circular protrusions of another embodiment of the present invention, Fig. 3 c is the vertical view figure of the LED packaging of two circular protrusions of another embodiment of the present invention, by Fig. 3 a, Fig. 3 b, Fig. 3 c as can be known, in the present embodiment, the wiring of conductive layer 16 has following several mode: shown in Fig. 3 a is conductive layer 16 and protruding 12a, less space is arranged between the 12b, this space can be ignored with respect to the size of protruding 12a and 12b, shown in Fig. 3 b is that conductive layer 16 is overlying on protruding 12a, on the 12b, shown in Fig. 3 c is that conductive layer 16 places protruding 12a, under the 12b, Fig. 3 b and Fig. 3 c are conductive layer 16 and protruding 12a, 12b is overlapped.Three kinds of different position relations can be selected for use according to the manufacturing materials of projection, for example: the manufacturing materials of projection is a conducting metal, then select for use the mode shown in Fig. 3 a more convenient, if select the mode of Fig. 3 b, Fig. 3 c, may do insulation in the overlapping region of conductive layer 16 and protruding 12a, 12b and handle, such as deposition insulating layer; If the manufacturing materials of projection is insulating material such as silica gel, oxide, above-mentioned three kinds of modes can adopt.
The flat shape of projection 12a, 12b is not limited to circle, it can be circular, square, polygon etc., Fig. 4 is the vertical view of the LED packaging of two square projectioies of another embodiment of the present invention, in Fig. 4, a kind of mode of conductive layer 16 wirings only is shown, promptly conductive layer 16 is overlying on protruding 12a, the 12b, but do not limit to this a kind of mode, for square projection, the wire laying mode of conductive layer 16 has above-mentioned multiple wire laying mode as circular protrusions.
Please refer to Fig. 5, Fig. 5 is the schematic diagram of embodiment of the invention led array encapsulation, led array is made of a plurality of led chips 14 usually, select wafer 11 for use as the substrate of led array substrate, the a plurality of protruding (not shown) corresponding with each led chip 14 in the led array is set on wafer 11, these led chips are installed on the wafer, and finish and be electrically connected, form led array, again each led chip is carried out above-mentioned encapsulation, a plurality of encapsulated layers 13 of each led chip of formation encapsulation (in the present embodiment, 13a, 13b, 13c does not illustrate respectively), so just finished the whole encapsulation process of wafer scale led array.Present embodiment can also all be integrated in function control chips such as current/voltage control module and antistatic module among the wafer or assemble thereon, can realize the chip-scale light source of system integration difference in functionality like this.The encapsulation of LED monocrystalline or polycrystalline is to finish on wafer entirely, need not single chips individual packages, and simple in structure, with existing semiconductor technology compatibility mutually, realize automation and large-scale production easily, high yield, encapsulating products cheaply can be provided.
Above content be in conjunction with concrete execution mode to further describing that the present invention did, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (10)
1. the method for packing of a led chip is characterized in that, comprising:
Led chip is fixed on the substrate;
The transparent encapsulating material of setting dosage is injected at top at described led chip, and through solidifying to form first hyaline layer of the described led chip of encapsulation;
At least two kinds of setting dosage are contained the outer surface that the encapsulating material that can be excited by described led chip and produce the fluorescent material of setting spectrum is injected into described first hyaline layer successively, through solidifying, described every kind of each self-forming of fluorescent material encapsulating material encapsulates the phosphor powder layer of described led chip.
2. the method for claim 1, it is characterized in that, when described led chip was blue-light LED chip, the fluorescent material encapsulating material that injects at the described first hyaline layer outer surface was: can be excited the fluorescent material encapsulating material that produces gold-tinted and can be excited the fluorescent material encapsulating material that produces ruddiness by described blue-light LED chip by described blue-light LED chip; When described led chip was the ultraviolet leds chip, the fluorescent material encapsulating material that injects at the described first hyaline layer outer surface was: can be excited the fluorescent material encapsulating material that produces ruddiness, can be excited the fluorescent material encapsulating material that produces green glow and can be excited the fluorescent material encapsulating material that produces blue light by described ultraviolet leds chip by described ultraviolet leds chip by described ultraviolet leds chip.
3. the method for claim 1 is characterized in that, the peak of described first hyaline layer exceeds described led chip and is no more than 1mm.
4. the method for claim 1 is characterized in that, the refractive index of a plurality of encapsulated layers that form on described led chip surface is successively decreased from inside to outside successively.
5. as each described method in the claim 1 to 4, it is characterized in that, before injecting the fluorescent material encapsulating material, also be included on the described substrate and grow around the projection of each phosphor powder layer forming area.
6. method as claimed in claim 5, it is characterized in that, the method of growth projection comprises on substrate: any in deposit, oxidation, sputter, Reflow Soldering, plating or the silk screen printing, the material of described projection comprises metal, silicide, oxide, tin cream or silica gel, and the flat shape of described projection comprises any in circle, the square or polygon.
7. LED packaging, comprise the led chip that when applying electric current, is used to produce light, the substrate that is used as described led chip substrate, it is characterized in that, also comprise: encapsulate first hyaline layer of described led chip and at the described first hyaline layer outer surface two or more phosphor powder layers of moulding successively.
8. LED packaging as claimed in claim 7, it is characterized in that, described led chip is a blue-light LED chip, and described phosphor powder layer comprises and can be excited by described blue-light LED chip and produce the phosphor powder layer of gold-tinted and can be excited by described blue-light LED chip and produce the phosphor powder layer of ruddiness; Described led chip is the ultraviolet leds chip, described phosphor powder layer comprise can be excited by described ultraviolet leds chip and produce ruddiness phosphor powder layer, can be excited by described ultraviolet leds chip and produce the phosphor powder layer of green glow and can be excited by described ultraviolet leds chip and produce the phosphor powder layer of blue light.
9. LED packaging as claimed in claim 7 is characterized in that, described encapsulating material is silica gel, epoxy resin or silicone grease.
10. as each described LED packaging in the claim 7 to 9, it is characterized in that, also comprise: grow on the described substrate, around the projection of each phosphor powder layer forming area.
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