CN108735650A - Cut die bonding film - Google Patents
Cut die bonding film Download PDFInfo
- Publication number
- CN108735650A CN108735650A CN201810343654.2A CN201810343654A CN108735650A CN 108735650 A CN108735650 A CN 108735650A CN 201810343654 A CN201810343654 A CN 201810343654A CN 108735650 A CN108735650 A CN 108735650A
- Authority
- CN
- China
- Prior art keywords
- die bonding
- bonding film
- adhesive layer
- adhesive
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The cutting die bonding film for being suitable for well cutting off adhesive layer by extending process is provided.Have cutting belt (10) and adhesive layer (20).Cutting belt (10) has the stepped construction of base material (11) and adhesive phase (12), and adhesive layer (20) and adhesive phase (12) are closely sealed.Relative in test film (50mm × 10mm) distance 20mm Initial grip between being cut by the lateral area (R1) from outer circumference end until 20mm inwardly of DDAF, the tensile stress generated in strain value 30% in the tension test that -15 DEG C and tensile speed carry out under conditions of 300mm/ minutes, the ratio of the tensile stress generated when in tension test of the test film (50mm × 10mm) cut in the inside region (R2) than aforementioned external region (R1) closer to inside by DDAF under the conditions of same in strain value 30% is 0.9~1.1.
Description
Technical field
The present invention relates to the cutting die bonding films that can be used in the manufacturing process of semiconductor device.
Background technology
In the manufacturing process of semiconductor device, the size for carrying chip engagement in order to obtain is comparable bonding with chip
The semiconductor chip of film, the semiconductor chip for carrying chip engagement adhesive layer are engaged using cutting chip thin sometimes
Film.Die bonding film is cut with size corresponding with the semiconductor crystal wafer as processing object, such as with:Including base material
And the cutting belt of adhesive phase;The strippingly closely sealed die bonding film (adhesive layer) in its adhesive phase side.
One of the method for semiconductor chip with adhesive layer is obtained as cutting die bonding film is used, it is known that warp
Method by the process for cutting off die bonding film for being extended to the cutting belt in cutting die bonding film.It should
In method, first, the laminated semiconductor wafer on the die bonding film of cutting die bonding film.The semiconductor crystal wafer is for example
To be cut off later with together with die bonding film can monolithic turn to multiple semiconductor chips in a manner of processed.It connects
It, in order to generate closely sealed multiple adhering film small pieces on a semiconductor die respectively by the die bonding film in cutting belt
Mode the die bonding film is cut off, make the cutting belt of cutting die bonding film along including semiconductor using expanding unit
Wafer radially and circumferentially including two-dimensional directional stretched.In the extension process, being equivalent to, chip engagement is thin
Cutting off at the position of position in film, the semiconductor die fenestra on die bonding film are cut off, thin in cutting chip engagement
On film and/or cutting belt, semiconductor crystal wafer monolithic turns to multiple semiconductor chips.Then, for after cutting off in cutting belt
Multiple semiconductor chips with adhesive layer carry out extension process again to expand spacing distance.Then, passing through
Such as after cleaning process, from the downside of cutting belt by the acicular member of mechanism for picking with and its closely sealed size and chip phase
When die bonding film jack up each semiconductor chip together, then, semiconductor chip is picked up from cutting belt.As above operation,
It obtains carrying the die bonding film i.e. semiconductor chip of adhesive layer.The semiconductor chip with adhesive layer is viscous by it
Oxidant layer is connect to be fixed on the adherends such as installation base plate by chip engagement.For the cutting chip engagement for example used as above
The relevant technologies of film are recorded in for example following Patent Documents 1 to 3.
Existing technical literature
Patent document
Patent document 1:Japanese Unexamined Patent Publication 2007-2173 bulletins
Patent document 2:Japanese Unexamined Patent Publication 2010-177401 bulletins
Patent document 3:Japanese Unexamined Patent Publication 2012-23161 bulletins
Invention content
Problems to be solved by the invention
Figure 14 indicates existing cutting die bonding film Y with diagrammatic cross-section.Cutting die bonding film Y includes to cut
Cut band 60 and die bonding film 70.Cutting belt 60 is the stepped construction of base material 61 and the adhesive phase 62 for playing bonding force.Core
Chip bonding film 70 is closely sealed by the bonding force and adhesive phase 62 of adhesive phase 62.Such cutting die bonding film Y tools
There is size disc corresponding with the semiconductor crystal wafer of processing object and/or workpiece in the manufacturing process as semiconductor device
Shape can be used for above-mentioned extension process.Such as shown in figure 15, adhesive phase 62 and semiconductor are attached in ring frame 81
Wafer 82 implements above-mentioned extension process in the state of fitting in die bonding film 70.Ring frame 81 is to be attached at cutting chip
The frame structure mechanically abutted in the state of bonding film Y, when the conveying mechanisms conveying workpieces such as the conveying arm that expanding unit has
Part.It is existing cutting die bonding film Y with such ring frame 81 by cutting belt 60 adhesive phase 62 bonding force and
The mode that the film can be fixed on designs.That is, existing cutting die bonding film Y has the adhesive phase in cutting belt 60
The design in ring frame fitting region is ensured in 62 around die bonding film 70.In such design, adhesive
The distance between the outer circumference end 62e of layer 62 and the outer circumference end 70e of die bonding film 70 are 10~30mm or so.
In such existing cutting die bonding film Y, it is bonded the region R1' and laminated semiconductor wafer of ring frame 81
The stepped construction of 82 region R2' is different, and thickness is different.It cuts in die bonding film Y, the difference of stepped construction and thickness
The main reason for elongation degree unevenness when difference can become extension homogenizes.Specifically, being laminated in cutting die bonding film Y
In structure, thickness different region R1' and region R2', the degree being stretched in the above-mentioned extension process cut off is easy
Generate difference.Region R1'(lateral areas in die bonding film Y) do not have die bonding film 70 in its stepped construction
And it is thinner than the region R2' positioned inside, therefore, it is easier to extend than region R2' in extending process.Also, cutting chip connects
It is more uneven to close elongation degrees of the film Y in extension, be more easy to happen cut off it is bad, in extending process cut off precalculated position
Do not generate the phenomenon that cutting off.
Invention that present invention has been made in view of the above circumstances, is suitable for it is intended that providing by extending process pair
The cutting die bonding film that adhesive layer is well cut off.
The solution to the problem
Cutting die bonding film provided by the invention has cutting belt and adhesive layer.Cutting belt have comprising base material and
The stepped construction of adhesive phase.Adhesive layer and the adhesive phase in cutting belt are strippingly closely sealed.Cut die bonding film
In, under conditions of between following 2nd test films distance 20mm, -15 DEG C and tensile speed 300mm/ minutes Initial grip into
The 2nd tensile stress generated in strain value 30% in capable tension test is initially being pressed from both sides relative to following 1st test films
In the tension test that distance 20mm, -15 DEG C and tensile speed carry out under conditions of 300mm/ minutes between tool in strain value 30%
The ratio of the 1st tensile stress generated is 0.9~1.1, preferably 0.95~1.05.The cutting chip engagement of such composition is thin
Film can be used for obtaining the semiconductor chip with adhesive layer in the manufacturing process of semiconductor device.From cutting chip engagement
The length direction for the 1st test film that film is cut can be about cutting die bonding film the so-called directions MD, can also be
The perpendicular directions TD, can also be other directions.The length direction of the 2nd test film cut from cutting die bonding film
It is set as identical as the length direction of the 1st test film.
(the 1st test film)
It is being cut by the lateral area from outer circumference end until 20mm inwardly of cutting die bonding film, have
The test film of the length of the 50mm extended in one direction and the width of 10mm
(the 2nd test film)
It is being cut by the inside region of ratio lateral area closer to the inside of cutting die bonding film, have along described one
The test film of the length for the 50mm that a direction extends and the width of 10mm
In the manufacturing process of semiconductor device, as described above, carrying the semiconductor chip of adhesive layer in order to obtain, have
When implement using cutting die bonding film carry out extension process, the extension process for cutting off, in the extension process,
Need to make to cut off the workpiece such as die bonding film and the semiconductor crystal wafer that power suitably acts in cutting belt.This cutting chip connects
It closes in film, the relative to the lateral area from outer circumference end until 20mm inwardly from the film the above-mentioned 1st
Above-mentioned 1st tensile stress of the test film at -15 DEG C, inside region from same film above-mentioned 2nd test film -
The ratio of above-mentioned 2nd tensile stress at 15 DEG C is 0.9~1.1, more preferably 0.95~1.05.Such composition is suitable for
The low temperature cut off to implement at -15 DEG C of the temperature lower than room temperature and its neighbouring temperature, which extends, realizes to include upper in process
State the homogenization of the elongation degree of the cutting die bonding film of lateral area and inside region.Therefore, has the sheet of this composition
Cutting die bonding film is adapted for carrying out acts on the adhesive layer in cutting belt, cutting on workpiece in low temperature extends process
The homogenization of disconnected power, is suitable for well cutting off them.
This cutting die bonding film that elongation degree when extending like this realizes homogenization can be in its bonding
Mode comprising workpiece fitting region and frame fitting region in oxidant layer is with substantially the same size in the direction in pellicular front
Design cutting belt and/or its adhesive phase and adhesive layer thereon.For example, may be used in the face of cutting die bonding film
Interior direction, adhesive layer outer circumference end be located at the distance within 1000 μm of each outer circumference end of base material away from cutting belt, adhesive phase
The design at place.This such cutting die bonding film is suitable for disposably implementing to be used for shape by processing such as a punch press process
At a cutting belt with base material and the stepped construction of adhesive phase processing and be used to form adhesive layer plus
Work.
In the manufacturing process of above-mentioned existing cutting die bonding film Y, need to be used to form predetermined size and shape
Cutting belt 60 manufacturing procedure (the 1st manufacturing procedure) and be used to form the die bonding film 70 of predetermined size and shape
Manufacturing procedure (the 2nd manufacturing procedure) is used as process independent of each other.In 1st manufacturing procedure, for example, for having defined isolation
The stacking of body, the substrate layer that base material 61 can be formed as and the adhesive phase for being formed as adhesive phase 62 positioned at the meeting between them
The stacking sheet body of structure implements the processing for making processing knife be entered to from substrate layer side until reaching slider.As a result, on slider
The cutting belt 60 of the stepped construction with adhesive phase 62 and base material 61 be formed on slider.In 2nd manufacturing procedure, example
Such as, for the laminates with defined slider and the stepped construction for the adhesive layer that die bonding film 70 can be formed as
Body implements the processing for making processing knife enter to slider from adhesive layer side.Die bonding film is formed on slider as a result,
70.It by the cutting belt 60 formed like this by process independent of each other and 70 position alignment of die bonding film and pastes later
It closes.Figure 16 shows the existing cutting of the slider 83 with covering 70 surface of die bonding film and 62 surface of adhesive phase
Die bonding film Y.
In contrast, cutting belt and/or its adhesive phase are with adhesive layer thereon, the direction in pellicular front has essence
The cutting die bonding film of present invention when upper identical design size is suitable for primary by processing such as a punch press process
Property implement to be used to form the processing of a cutting belt of the stepped construction with base material and adhesive phase and be used to form one it is viscous
Connect the processing of oxidant layer.This such cutting die bonding film is suitable for keeping adhesive layer good as described above by extension process
Ground is cut off, also, is suitable for efficiently manufacturing from considerations such as viewpoint, the viewpoints for inhibiting manufacturing cost for cutting down manufacturing process's number.
This cutting die bonding film preferably has following stepped construction:Including base material, adhesive phase and bonding agent
Layer, and it is continuous in inside region and lateral area.It is such to be formed in above-mentioned good the cutting off property realized in extension process
Aspect is preferred.
The thickness of this cutting die bonding film is preferably identical in inside region and lateral area.It is such to be formed in realization
It is preferred in terms of extending above-mentioned good the cutting off property in process.
Above-mentioned 1st tensile stress and the 2nd tensile stress of this cutting die bonding film from ensure at -15 DEG C and its near
At a temperature of extension when act on adhesive layer cut off power from the perspective of, preferably 5N or more, more preferably 8N or more,
Further preferably 10N or more.In addition, from the adhesive of cutting belt when inhibiting the extension at -15 DEG C and its at neighbouring temperature
From the perspective of stripping between layer and adhesive layer, above-mentioned 1st tensile stress of this cutting die bonding film and the 2nd stretching
Stress is preferably 28N or less, more preferably 25N or less, further preferably 20N or less.
The adhesive layer of this cutting die bonding film is in -15 DEG C, 180 ° of peel angle and tensile speed 300mm/ minutes
Under conditions of disbonded test in SUS planes show preferred 1N/10mm or more, more preferable 1.5N/10mm or more, further
It is preferred that 180 ° of peel adhesions of 2N/10mm or more.In addition, to SUS in the disbonded test of the adhesive layer under the same conditions
Plane shows such as 100N/10mm or less, preferably 50N/10mm 180 ° of peel adhesions below.The structure about bonding force
In pairs in ensure under -15 DEG C of the temperature lower than room temperature and its neighbouring temperature based on this cutting die bonding film
It is suitable for the holding of frame component.
In this cutting die bonding film, between the 1st test film Initial grip distance 20mm, 23 DEG C and stretch speed
The 3rd tensile stress that is generated in strain value 30% in the tension test that carries out under conditions of degree 300mm/ minutes and to the 2nd
In the tension test that test film carries out between Initial grip under conditions of distance 20mm, 23 DEG C and tensile speed 300mm/ minutes
The 4th tensile stress generated in strain value 30% be preferably 1N or more, more preferably 3N or more, further preferably 5N with
On.It is such composition be adapted for carrying out the cutting die bonding film comprising above-mentioned lateral area and inside region at 23 DEG C and its
The homogenization of elongation degree when being extended at neighbouring temperature.After cutting off use extension process, in order to cutting in cutting belt
The multiple semiconductor chips with adhesive layer having no progeny widen spacing distance, carry out extension work again at normal temperatures sometimes
Sequence, the above-mentioned composition about the 3rd and the 4th tensile stress are adapted for carrying out the cutting die bonding film in room temperature extension process
Elongation degree homogenization.In addition, from the adhesive of cutting belt when inhibiting the extension under 23 DEG C and its neighbouring temperature
From the perspective of stripping between layer and adhesive layer, above-mentioned 3rd tensile stress of this cutting die bonding film and the 4th stretching
Stress is preferably 20N or less, more preferably 15N or less, further preferably 10N or less.
4th tensile stress of this cutting die bonding film is preferably 0.95 relative to the ratio of above-mentioned 3rd tensile stress
~1.05.Such composition is adapted for carrying out the cutting die bonding film comprising above-mentioned lateral area and inside region at 23 DEG C
And its homogenization of elongation degree when being extended at neighbouring temperature.
The adhesive layer of this cutting die bonding film is in 23 DEG C, 180 ° of peel angle and tensile speed 300mm/ minutes
Under the conditions of disbonded test in SUS planes show preferred 0.1N/10mm or more, more preferable 0.3N/10mm or more, further
It is preferred that 180 ° of peel adhesions of 0.5N/10mm or more.Such composition is for ensuring the base under 23 DEG C and its neighbouring temperature
It is suitable for the holding of the frame component of this cutting die bonding film.In addition, the adhesive layer is under the same conditions
Such as 20N/10mm or less, preferably 10N/10mm 180 ° of peel adhesions below are shown to SUS planes in disbonded test.This
In the frame when composition of sample is suitable for inhibiting to remove the frames component such as ring frame from the adhesive layer of this cutting die bonding film
Component generates bonding agent residue.
Description of the drawings
Fig. 1 is the diagrammatic cross-section of the cutting die bonding film of an embodiment of the invention.
Fig. 2 indicates an example for the case where cutting die bonding film shown in FIG. 1 carries slider.
Fig. 3 indicates an example of the manufacturing method of cutting die bonding film shown in FIG. 1.
Fig. 4 indicates a part of work in the manufacturing method for semiconductor device using cutting die bonding film shown in FIG. 1
Sequence.
Fig. 5 indicates the subsequent handling of process shown in Fig. 4.
Fig. 6 indicates the subsequent handling of process shown in fig. 5.
Fig. 7 indicates the subsequent handling of process shown in fig. 6.
Fig. 8 shows the subsequent handlings of process shown in Fig. 7.
Fig. 9 indicates the subsequent handling of process shown in Fig. 8.
Figure 10 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1
A part of process.
Figure 11 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1
A part of process.
Figure 12 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1
A part of process.
Figure 13 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1
A part of process.
Figure 14 indicates the diagrammatic cross-section of existing cutting die bonding film.
Figure 15 indicates to cut the occupation mode of die bonding film shown in Figure 14.
Figure 16 indicates to cut a kind of supply form of die bonding film shown in Figure 14.
Reference sign
X cuts die bonding film
R1, R1 ' lateral area
R2, R2 ' inside region
10 cutting belts
11 base materials
11e outer circumference ends
12 adhesive phases
12e outer circumference ends
20,21 adhesive layers
20e outer circumference ends
W, 30A, 30C semiconductor crystal wafer
30B semiconductor crystal wafer dividing bodies
30a slot segmentations
30b modification areas
31 semiconductor chips
Specific implementation mode
Fig. 1 is the diagrammatic cross-section of the cutting die bonding film X of an embodiment of the invention.Cut chip engagement
Film X has the stepped construction comprising cutting belt 10 and adhesive layer 20.Cutting belt 10, which has, includes base material 11 and adhesive phase
12 stepped construction.Adhesive layer 20 and the adhesive phase 12 of cutting belt 10 are strippingly closely sealed.Cutting die bonding film X can
For obtaining for example aftermentioned expansion during semiconductor chip with adhesive layer in the manufacture of semiconductor device
It opens up in process, there is the disc-shape of size corresponding with workpiece such as semiconductor crystal wafers.Cut the diameter of die bonding film X
Such as (8 inch wafers correspond in the range of (12 inch wafers correspond to type), 245~280mm in the range of 345~380mm
Type), (18 inch wafers correspond in the range of (6 inch wafers correspond to type) or 495~530mm in the range of 195~230mm
Type).
Cut die bonding film X between following 1st test films Initial grip distance 20mm, -15 DEG C and stretch
The 1st tensile stress generated in strain value 30% in the tension test that speed carries out under conditions of 300mm/ minutes is preferably 5N
Above, 8N or more, further preferably 10N or more are more preferably.To following 2nd test films in condition as hereinbefore
In strain value in the tension test carried out under (distance 20mm between Initial grip, -15 DEG C, 300mm/ minutes conditions of tensile speed)
The 2nd tensile stress generated when 30% is preferably 5N or more, more preferably 8N or more, further preferably 10N or more.These
1 tensile stress and the 2nd tensile stress are respectively preferably 28N or less, more preferably 25N or less, further preferably 20N or less.
In addition, the 2nd tensile stress (- 15 DEG C) relative to the 1st tensile stress (- 15 DEG C) ratio be 0.9~1.1, preferably 0.95~
1.05.The length direction of the 1st test film cut from cutting die bonding film X can be about cutting die bonding film X
The so-called directions MD, or the perpendicular directions TD can also be other directions.From cutting die bonding film X
The length direction of the 2nd test film cut is set as identical as the length direction of the 1st test film.It, can be in addition, for tensile stress
It is measured using cupping machine (trade name " Autograph AGS-J ", Shimadzu Scisakusho Ltd's system).
(the 1st test film)
Being cut by the lateral area R1 from outer circumference end until 20mm inwardly of cutting die bonding film X,
The test film of the width of length and 10mm with the 50mm extended in one direction
(the 2nd test film)
It is being cut by the inside region R2 than lateral area R1 closer to inside of cutting die bonding film X, have edge
The test film of the length for the 50mm that an aforementioned direction extends and the width of 10mm
In addition, cutting die bonding film X between the 1st test film Initial grip distance 20mm, 23 DEG C and stretch
The 3rd tensile stress that is generated in strain value 30% in the tension test that speed carries out under conditions of 300mm/ minutes and right
What the 2nd test film carried out under identical conditions (between Initial grip distance 20mm, 23 DEG C, 300mm/ minutes conditions of tensile speed)
The 4th tensile stress generated in strain value 30% in tension test is respectively preferably 1N or more, more preferably 3N or more, into one
Step is preferably 5N or more.These the 3rd tensile stresses and the 4th tensile stress be respectively preferably 20N or less, more preferably 15N or less,
Further preferably 10N or less.In addition, the 4th tensile stress (23 DEG C) is preferably relative to the ratio of the 3rd tensile stress (23 DEG C)
0.95~1.05.
The base material 11 of cutting belt 10 is worked as supporter in cutting belt 10 and/or cutting die bonding film X
Component.Base material 11 suitable can use such as plastic basis material (especially plastic film).Composition material as the plastic basis material
Material, such as can enumerate:Polyvinyl chloride, polyolefin, polyester, polyurethane, makrolon, polyether-ether-ketone, gathers Vingon
Acid imide, polyetherimide, polyamide, fully aromatic polyamide, polyphenylene sulfide, aromatic polyamides, fluororesin, cellulose-based tree
Fat and organic siliconresin.As polyolefin, such as can enumerate:Low density polyethylene (LDPE), straight-chain low density polyethylene (LDPE), in
Density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homopolymerization poly- third
Alkene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene-(methyl) acrylic acid
Copolymer, ethylene-(methyl) acrylate copolymer, ethylene-butene copolymer and ethylene-hexene co-polymers.As polyester,
Such as polyethylene terephthalate (PET), polyethylene naphthalate and poly terephthalic acid fourth two can be enumerated
Alcohol ester (PBT).Base material 11 can be formed of one material, and can also be formed by two kinds or more materials.Base material 11 can have single
Layer structure, it is possible to have multilayered structure.From the good heat-shrinkable for ensuring base material 11, cutting belt 10 and/or base material are utilized
11 part is heat-shrinked to maintain from the perspective of extending the chip spacing distance that process is realized by aftermentioned separation, base material
11 preferably comprise ethylene-vinyl acetate copolymer as main component.The principal component of base material 11 refers to being accounted in constituent
The ingredient of maximum mass ratio.Can be non-stretched film or list in addition, when base material 11 is formed by plastic film
Axis oriented film can also be biaxially oriented film.When adhesive phase 12 on base material 11 is ultraviolet hardening as described later,
Base material 11 preferably has ultraviolet light permeability.
In cutting die bonding film X's in use, making cutting belt 10 and/or base material 11 shrink for example, by local heating
In the case of, such as using the part of cutting belt 10 and/or base material 11 be heat-shrinked and maintain through aftermentioned separations extension work
In the case of the chip spacing distance that sequence is realized, base material 11 preferably has heat-shrinkable.In addition, base material 11 is formed by plastic film
In the case of, for cutting belt 10 and/or base material 11, in terms of realizing isotropic heat-shrinkable, base material 11 is preferably
Biaxially oriented film.Cutting belt 10 and/or base material 11 carry out under conditions of 100 DEG C of heating temperature and heating treatment time 60 seconds
Heat treatment experiment in percent thermal shrinkage be preferably 2~30%, more preferably 2~25%, further preferably 3~20%,
Further preferably 5~20%.The percent thermal shrinkage refers to that the percent thermal shrinkage in the so-called directions MD and the heat in the so-called directions TD are received
At least one of shrinkage.
The surface of 12 side of adhesive phase of base material 11 can implement for improving and the object of the adaptation of adhesive phase 12
Reason processing, chemical treatment or primary coat processing.As physical treatment, such as can enumerate:Sided corona treatment, corona treatment,
Sandblasting working process, ozone exposure processing, fire exposure processing, high-voltage electric shock exposure treatment and ionization radial line processing.As
Chemical treatment, such as chromic acid processing can be enumerated.For improving adhesive phase of the processing of adaptation preferably to base material 11
The entire surface of 12 sides is implemented.
The thickness of base material 11 is from ensuring base material 11 as cutting belt 10 and/or the supporter hair of cutting die bonding film X
From the perspective of the intensity for waving effect, preferably 40 μm or more, more preferably 50 μm or more, further preferably 55 μm or more,
Further preferably 60 μm or more.In addition, realizing the flexible sight of appropriateness from cutting belt 10 and/or cutting die bonding film X
Point sets out, and the thickness of base material 11 is preferably 200 μm or less, more preferably 180 μm or less, further preferably 150 μm or less.
The adhesive phase 12 of cutting belt 10 contains adhesive.Adhesive can be that can pass through irradiation with radiation, heating etc.
Intentionally make the adhesive (bonding force reduction type adhesive) that bonding force reduces from external effect, or bonding force is several
Or it can be cut completely according to using not because of the adhesive (the non-reduced type adhesive of bonding force) reduced from external effect
It cuts die bonding film X and carries out method, condition of singualtion of semiconductor chip of singualtion etc. suitable for selection.
As the adhesive in adhesive phase 12, when using bonding force reduction type adhesive, in cutting die bonding film X
Manufacturing process, during use, state and display phase that adhesive phase 12 shows relatively high bonding force can be used separately
To the state of low bonding force.For example, in the adhesive phase 12 of cutting belt 10 in the manufacturing process of cutting die bonding film X
When upper fitting adhesive layer 20, cut die bonding film X be used for defined wafer cutting action when, adhesive can be utilized
The state of the 12 relatively high bonding force of display of layer come inhibit to prevent the floating of the equal adherends autoadhesion oxidant layer of adhesive layer 20 12,
On the other hand stripping is being used for semiconductor of the pickup of cutting belt 10 with adhesive layer from cutting die bonding film X later
In the pickup process of chip, the bonding force of adhesive phase 12 can be made to reduce, can suitably be picked up with viscous from adhesive phase 12
Connect the semiconductor chip of oxidant layer.
As such bonding force reduction type adhesive, such as Radiation curing adhesive can be enumerated (with spoke
The adhesive of ray-curable), thermal expansion type adhesive etc..In the adhesive phase 12 of present embodiment, one kind can be used
Bonding force reduction type adhesive can also use two kinds or more bonding force reduction type adhesives.Furthermore, it is possible to be adhesive phase 12
Whole to be formed by bonding force reduction type adhesive, the part that can also be adhesive phase 12 bonds dosage form by bonding force reduction type
At.For example, when adhesive phase 12 has single layer structure, can be that adhesive phase 12 is whole bonds dosage form by bonding force reduction type
At can also be that predetermined portion in adhesive phase 12 is formed by bonding force reduction type adhesive, other positions are non-by bonding force
Reduction type adhesive is formed.Can form whole layers of stepped construction by gluing in addition, when adhesive phase 12 has stepped construction
Resultant force reduction type adhesive is formed, and can also be that a part of layer in stepped construction is formed by bonding force reduction type adhesive.
As the Radiation curing adhesive in adhesive phase 12, can be used for example by electron ray, ultraviolet light,
Alpha ray, β rays, gamma-rays or X-ray irradiation and the adhesive of cured type, can the use of particularly suitable ground pass through purple
Outside line is irradiated and the adhesive (ultraviolet-curing adhesive) of cured type.
As the Radiation curing adhesive in adhesive phase 12, such as addition type radiation curable can be enumerated
Adhesive contains:The base polymers such as the acrylic polymer as acrylic adhesives;It polymerize with radiation
Monomer component, the oligomer ingredient of the radiation polymerisms of functional groups such as the carbon-to-carbon double bond of property.
Above-mentioned acrylic polymer is preferably comprised to be made from the monomeric unit of acrylate and/or methacrylate
For the most main monomer unit of mass ratio.Hereinafter, with " (methyl) acrylic acid " expression " acrylic acid " and/or " metering system
Acid ".
As (methyl) acrylate for the monomeric unit for being used to form acrylic polymer, such as can enumerate:
(methyl) alkyl acrylate, (methyl) acrylate base ester, (methyl) benzyl acrylate etc. contain alkyl (methyl) propylene
Acid esters.As (methyl) alkyl acrylate, such as can enumerate:The methyl ester of (methyl) acrylic acid, ethyl ester, propyl
Ester, isopropyl esters, butyl ester, isobutyl, sec-butyl ester, tertiary butyl ester, amyl ester, isoamyl base ester, hexyl ester, heptyl ester,
Octyl ester, 2- ethylhexyls, isooctyl acrylate, nonyl ester, decyl ester, isodecyl base ester, hendecane base ester, dodecyl ester are (i.e.
Lauryl Ester), tridecane base ester, tetradecane base ester, cetyl ester, stearyl and eicosane base ester.As (methyl)
Acrylate base ester, such as the cyclopentyl ester and cyclohexyl ester of (methyl) acrylic acid can be enumerated.As (methyl) propylene
Sour aryl ester, such as (methyl) phenyl acrylate and (methyl) benzyl acrylate can be enumerated.For as third
(methyl) acrylate of the principal monomer of alkene acids polymers can be a kind of (methyl) acrylate, or two kinds
(methyl) acrylate above.The bases such as the adhesiveness dependent on (methyl) acrylate are suitably shown making adhesive phase 12
In terms of this characteristic, it is used to form (methyl) acrylate as principal monomer in whole monomer components of acrylic polymer
Ratio be preferably 40 mass % or more, more preferably 60 mass % or more.
Acrylic polymer can also include from can be with (methyl) third to be modified its cohesive force, heat resistance etc.
The monomeric unit of other monomers of olefin(e) acid ester copolymerization.As such monomer component, such as can enumerate:Carboxyl group-containing monomer,
Anhydride monomers, contain glycidyl monomer, monomer containing sulfonic group, phosphorous acid-based monomers, acrylamide and third at hydroxyl monomer
Alkene nitrile etc. is containing monomer etc..As carboxyl group-containing monomer, such as can enumerate:Acrylic acid, methacrylic acid, (methyl) third
Olefin(e) acid carboxyethyl, (methyl) acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid and crotonic acid.As anhydride monomers,
Such as maleic anhydride and itaconic anhydride can be enumerated.As hydroxyl monomer, such as can enumerate:(methyl) acrylic acid 2-
Hydroxyethyl ester, (methyl) acrylic acid 2- hydroxy-propyl esters, (methyl) acrylic acid 4- hydroxybutyls, (methyl) acrylic acid 6- hydroxyls
Hexyl ester, (methyl) acrylic acid 8- hydroxy octyls ester, (methyl) acrylic acid 10- hydroxydecyl methacrylates, (methyl) acrylic acid 12- hydroxyls
Lauryl Ester and (methyl) acrylic acid (4- Hydroxymethyl-cyclo-hexyls) methyl esters.As containing glycidyl monomer, such as can arrange
Enumerate (methyl) glycidyl acrylate and (methyl) acrylic acid methylglycidyl esters.As monomer containing sulfonic group, such as
It can enumerate:Styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide
Propane sulfonic acid, sulfopropyl (methyl) acrylate and (methyl) propane sulfonic acid.As phosphorous acid-based monomers, such as can
To enumerate 2- hydroxylethyl acyl phosphates.As other monomers for acrylic polymer, one can be used
Kind monomer can also use two kinds or more monomers.It suitably shows to depend on (methyl) acrylate making adhesive phase 12
The fundamental characteristics such as adhesiveness in terms of, be used to form other monomer components in whole monomer components of acrylic polymer
Ratio is preferably 60 mass % or less, more preferably 40 mass % or less.
Acrylic polymer can include from can be with conduct to form cross-linked structure in its polymer backbone
The monomeric unit of the multi-functional monomer of the monomer components such as (methyl) acrylate of principal monomer copolymerization.As such more officials
Energy property monomer, such as can enumerate:Hexylene glycol two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylate,
(poly-) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate,
Trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) propylene
Acid esters, epoxy (methyl) acrylate (i.e. poly epihydric alcohol base (methyl) acrylate), polyester (methyl) acrylate and ammonia
Carbamate (methyl) acrylate.As the multi-functional monomer for acrylic polymer, a kind of more officials can be used
Energy property monomer, can also use two kinds or more multi-functional monomers.It is used to form whole monomer components of acrylic polymer
In the ratio of multi-functional monomer so that adhesive phase 12 is suitably shown the adhesiveness dependent on (methyl) acrylate
The aspect of equal fundamental characteristics, preferably 40 mass % or less, more preferably 30 mass % or less.
The starting monomer for being used to form it can polymerize by acrylic polymer to be obtained.As polymerization, such as
It can enumerate:Polymerisation in solution, emulsion polymerization, bulk polymerization and suspension polymerisation.From use cutting belt 10 and/or cutting chip
From the perspective of the high level of cleanliness of the manufacturing method for semiconductor device of bonding film X, preferably cutting belt 10 and/or cutting chip
Low molecular weight substance in the adhesive phase 12 of bonding film X is less, and the number-average molecular weight of acrylic polymer is preferably 10
Ten thousand or more, 200,000~3,000,000 are more preferably.
Adhesive phase 12 and/or its adhesive is used to form in order to improve the base polymers such as acrylic polymer
Number-average molecular weight, such as external crosslinker can be contained.As for being reacted with base polymers such as acrylic polymers and
The external crosslinker for forming cross-linked structure, can enumerate:Polyisocyanate compound, epoxide, polyol compound
(polynary phenol system compound etc.), aziridine cpd and melamine series crosslinking agent.Adhesive phase 12 and/or it is used to form it
Adhesive in the content of external crosslinker relative to 100 mass parts of base polymer be preferably 5 below mass part, more preferable
For 0.1~5 mass parts.
As being used to form the above-mentioned radiation polymerizable monomer ingredient of Radiation curing adhesive, such as can enumerate
Go out:Carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) propylene
Acid esters, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six
(methyl) acrylate and 1,4- butanediols two (methyl) acrylate.As being used to form Radiation curing adhesive
Above-mentioned radiation polyreactive oligomers ingredient, such as carbamate system, polyether system, Polyester, makrolon can be enumerated
The various oligomer such as system, polybutadiene system, the substance of molecular weight 100~30000 or so is suitable.Radiation curable bonds
The monomer component of radiation polymerism in agent, the total content of oligomer ingredient are in the bonding that can make to be formed by adhesive phase 12
Power determines in the range of suitably reducing, relative to the base polymers such as acrylic polymer 100 mass parts, for example, 5~
500 mass parts, preferably 40~150 mass parts.In addition, the Radiation curing adhesive as addition type, such as can make
The substance disclosed in Japanese Unexamined Patent Application 60-196956 bulletins.
As the Radiation curing adhesive in adhesive phase 12, such as can also enumerate:Included in polymer side
In chain, main polymer chain, main polymer chain end have radiation polymerism the functional groups such as carbon-to-carbon double bond base polymer
Inherent type Radiation curing adhesive.Such inherence type Radiation curing adhesive is inhibiting to be formed by adhesive
It is suitable in terms of the undesirable ongoing change for moving caused adhesion characteristic by low molecular weight compositions in layer 12.
As base polymer contained in inherent type Radiation curing adhesive, preferably acrylic polymer is made
For basic framework.As the acrylic polymer of basic framework as formation, above-mentioned acrylic polymer may be used.
As the method for importing radiation polymerism carbon-to-carbon double bond to acrylic polymer, such as following method can be enumerated:
After so that the copolymerization of the starting monomer comprising the monomer with defined functional group (the 1st functional group) is obtained acrylic polymer,
Make that there is energy and react and the defined functional group (the 2nd functional group) being bonded and radiation polymerism between the 1st functional group
The compound of carbon-to-carbon double bond contracts in the state of maintaining the radiation polymerism of carbon-to-carbon double bond with acrylic polymer
Close reaction or addition reaction.
As the combination of the 1st functional group and the 2nd functional group, such as can enumerate:Carboxyl and epoxy group, epoxy group and carboxylic
Base, carboxyl and '-aziridino, '-aziridino and carboxyl, hydroxyl and isocyanate group, isocyanate group and hydroxyl.These combinations
In, from the viewpoint of the easy degree of reactive tracing, the combination of hydroxyl and isocyanate group, the group of isocyanate group and hydroxyl
Conjunction is suitable.In addition, the technical difficulty for making the polymer with isocyanate group with high reactivity is high, from acrylic polymer
From the perspective of the easy degree for closing making or the acquisition of object, above-mentioned 1st functional group of acrylic polymer side be hydroxyl and
The case where above-mentioned 2nd functional group is isocyanate group is preferably.In this case, as there is radiation polymerism simultaneously
The isocyanate compound of carbon-to-carbon double bond and isocyanate group as the 2nd functional group, such as can enumerate:Metering system
Acyl isocyanate, 2- methacryloxyethyls isocyanates and isopropenyl-bis (alpha, alpha-dimethylbenzyl) base isocyanic acid
Ester.In addition, as the acrylic polymer with the 1st functional group, including from the monomeric unit of above-mentioned hydroxyl monomer
Substance be suitable, including from 2- hydroxyethyl vinylethers, 4- hydroxybutyl vinyl ethers, diethylene glycol monovinyl base
The substance of the monomeric unit of the ethers based compound such as ether is also suitable.
Radiation curing adhesive in adhesive phase 12 preferably comprises Photoepolymerizationinitiater initiater.Cause as photopolymerization
Agent, such as can enumerate:α -one alcohol based compound, acetophenone based compound, benzoin ether based compound, ketal system chemical combination
Object, aromatic sulfonyl based compound, photolytic activity oxime compound, benzophenone based compound, thioxanthones based compound, camphor
Quinone, halogenated ketone, acylphosphine oxide and acyl phosphonate.As α -one alcohol based compounds, such as can enumerate:4- (2- hydroxyls
Ethyoxyl) phenyl (2- hydroxyl -2- propyl) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2- methyl -2- hydroxypropiophenonepreparations and
1- hydroxycyclohexylphenylketones.As acetophenone based compound, such as can enumerate:Methoxyacetophenone, 2,2- dimethoxies
Base -1,2- diphenylethane -1- ketone, 2,2- diethoxy acetophenones and 2- methyl-1s-[4- (methyl mercapto)-phenyl] -2- morpholines
For propane -1.As benzoin ether based compound, such as can enumerate:Benzoin ethyl ether, benzoin isopropyl ether and fennel
Fragrant acyloin methyl ether.As ketal based compound, such as benzil dimethyl ketal can be enumerated.As aromatic sulfonyl
Based compound, such as 2- naphthalene sulfonyl chlorides can be enumerated.As photolytic activity oxime compound, such as can enumerate:1- phenyl-
1,2- propanedione -2- (O- ethoxy carbonyls) oxime.As benzophenone based compound, such as can enumerate:Benzophenone, benzene
Formylbenzoate and 3,3'- dimethyl -4- methoxy benzophenones.As thioxanthones based compound, such as can enumerate
Go out:Thioxanthones, 2-chlorothioxanthone, 2- methyl thioxanthones, 2,4- dimethyl thioxanthones, isopropyl thioxanthone, 2,4- dichloro thioxanthenes
Ketone, 2,4- diethyl thioxanthones and 2,4- diisopropylthioxanthones.Light in the Radiation curing adhesive of adhesive phase 12
The content of polymerization initiator is such as 0.05~20 mass relative to 100 mass parts of the base polymers such as acrylic polymer
Part.
Above-mentioned thermal expansion type adhesive in adhesive phase 12 (is sent out to contain the ingredient for foaming, expanding by heating
Infusion, heat-expandable microsphere etc.) adhesive when, as foaming agent, various inorganic system's foaming agents and organic system can be enumerated
Foaming agent as heat-expandable microsphere, such as can enumerate the substance enclosed in shell and be easy gasification expansion by heating
Made of the microballoon that constitutes.As inorganic system's foaming agent, such as can enumerate:Ammonium carbonate, ammonium hydrogen carbonate, sodium bicarbonate, Asia
Ammonium nitrate, sodium borohydride and Azide species.As organic system foaming agent, such as can enumerate:F-11, two
The azo compounds such as chlorine fluoric ether, azobis isobutyronitrile, azodicarbonamide, the Barium azodicarboxylates such as one fluoromethane of chlorine,
Unifor, diphenyl sulfone -3,3'- disulfonyl hydrazides, 4,4'- oxos bis- (benzene sulfonyl hydrazides), allyl bis- (sulfohydrazides) etc.
Semicarbazides based compound, the 5- such as hydrazine based compound, p-toluene sulfonylsemicarbazide, 4,4'- oxos bis- (benzenesulfonylamino ureas)
Three azole compounds and the N such as quinoline base -1,2,3,4- thiatriazoles, N'- dinitrosopentamethylene tetramines, N, N'- dimethyl -
The N- nitroso based compounds such as N, N'- dinitrosoterephthalamine.As be used to form above-mentioned heat-expandable microsphere,
It is easy the substance of gasification expansion by heating, such as iso-butane, propane and pentane can be enumerated.By using coacervation, boundary
Face polymerization etc. will be easy by heating in the enclosed shell forming material of substance of gasification expansion, can make heat-expandable microsphere.
As shell forming material, it can use and show the substance of hot melt property, can be broken by the effect of the thermal expansion of enclosed substance
The substance split.As such substance, such as vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl alcohol can be enumerated
Butyral, polymethyl methacrylate, polyacrylonitrile, Vingon and polysulfones.
As the non-reduced type adhesive of above-mentioned bonding force, such as can enumerate:The pre- irradiation with radiation that first passes through makes viscous
Adhesive, the Pressuresensitive Adhesive etc. of the cured form of Radiation curing adhesive described in resultant force reduction type adhesive.
In the adhesive phase 12 of present embodiment, a kind of non-reduced type adhesive of bonding force can be used, two kinds or more can also be used
The non-reduced type adhesive of bonding force.It is formed by the non-reduced type adhesive of bonding force in addition it is also possible to be that adhesive phase 12 is whole, also
Can be that the part of adhesive phase 12 is formed by the non-reduced type adhesive of bonding force.For example, adhesive phase 12 has single layer knot
When structure, can be that adhesive phase 12 is whole be formed by the non-reduced type adhesive of bonding force, can also be the rule in adhesive phase 12
Determine that position is formed by the non-reduced type adhesive of bonding force, other positions are formed by bonding force reduction type adhesive.In addition, adhesive
Can form whole layers of stepped construction to be formed by the non-reduced type adhesive of bonding force, also may be used when layer 12 has stepped construction
To be that a part of layer in stepped construction is formed by the non-reduced type adhesive of bonding force.
First passing through irradiation with radiation makes adhesive (the irradiation with radiation mistake of the cured form of Radiation curing adhesive in advance
Radiation curing adhesive) even if bonding force is reduced by irradiation with radiation, also show that due to contained polymerization
The adhesiveness of object ingredient can play the bonding force of the minimum needed for cutting belt adhesive phase in cutting action etc..This implementation
In mode, when the Radiation curing adhesive crossed using irradiation with radiation, in the face propagation direction of adhesive phase 12, Ke Yishi
Adhesive phase 12 is whole to be formed by the Radiation curing adhesive that irradiation with radiation is crossed, and can also be one of adhesive phase 12
It point is formed by the Radiation curing adhesive that irradiation with radiation is crossed and other parts is by the non-irradiated radiation curing of radiation
Type adhesive is formed.
Include the cutting core for the Radiation curing adhesive that irradiation with radiation is crossed at least part of adhesive phase 12
Chip bonding film X can for example be manufactured via following process.First, it is formed by radiation on the base material 11 of cutting belt 10
The adhesive phase (radiation-curable adhesive layer) that curing adhesive obtains.Then, to the Radiation curing adhesive
A defined part or overall exposure radiation for layer, forms the radiation curable that at least part is crossed comprising irradiation with radiation
The adhesive phase of adhesive.Then, the adhesive layer of aftermentioned adhesive layer 20 is formed on the adhesive phase.Later,
By for example aftermentioned disposable processing forming method to these adhesive phases and adhesive layer, it is formed simultaneously adhesive phase 12
And adhesive layer 20.Include cutting for the Radiation curing adhesive that irradiation with radiation is crossed at least part of adhesive phase 12
It cuts die bonding film X or can also be manufactured via following process.First, on the base material 11 of cutting belt 10 formed by
The adhesive phase (radiation-curable adhesive layer) that Radiation curing adhesive obtains.Then, in the radiation curable
The adhesive layer of aftermentioned adhesive layer 20 is formed on adhesive phase.Then, to the rule of radiation-curable adhesive layer
A fixed part or overall exposure radiation is formed in the radiation curable bonding that at least part is crossed comprising irradiation with radiation
The adhesive phase of agent.Thereafter, by for example aftermentioned disposable processing forming method to these adhesive phases and adhesive layer,
It is formed simultaneously adhesive phase 12 and adhesive layer 20.
On the other hand, as the Pressuresensitive Adhesive in adhesive phase 12, known and usual adhesive can be used,
It suitable can use acrylic adhesives, the elastomeric adhesive using acrylic polymer as basic polymer.Bonding
When oxidant layer 12 contains acrylic adhesives as Pressuresensitive Adhesive, base polymer as the acrylic adhesives
Acrylic polymer is preferably comprised from the monomeric unit of (methyl) acrylate main list most as mass ratio
Body unit.As such acrylic polymer, such as can enumerate in third described in Radiation curing adhesive
Alkene acids polymers.
It adhesive phase 12 and/or is used to form in its adhesive, on the basis of above-mentioned each ingredient, can also contain and hand over
Join colorants such as accelerating agent, tackifier, anti-aging agent, pigment, dyestuff etc..Colorant can be coloured by irradiation with radiation
Compound.As such compound, such as leuco dye can be enumerated.
The thickness of adhesive phase 12 is preferably 1~50 μm, more preferably 2~30 μm, further preferably 5~25 μm.This
Being formed in when for example adhesive phase 12 includes Radiation curing adhesive for sample obtains the adhesive phase 12 in radiation curing
It is suitable in terms of the balance of the front and back bonding force to adhesive layer 20.
The adhesive layer 20 of cutting die bonding film X has both the bonding for showing Thermocurable as chip engagement
The function of agent and adhesive function for keeping the frames component such as the workpiece such as semiconductor crystal wafer and ring frame.In present embodiment, use
There can be the heat comprising heat-curing resin and as such as Binder Composition in the bonding bonding agent for forming adhesive layer 20
The composition of plastic resin, it is possible to have comprising with the heat of Thermocurable functional group that can be reacted and be bonded with curing agent
The composition of plastic resin.The bonding bonding agent for being used to form adhesive layer 20 has comprising the thermoplastic with Thermocurable functional group
When the composition of property resin, which need not include heat-curing resin (epoxy resin etc.).Such adhesive layer 20
Can with single layer structure, can also be with multilayered structure.
It has both as the effect of chip engagement bonding agent and the adhesive layer 20 of adhesive effect in the bonding to width 4mm
Oxidant layer coupons distance 10mm, frequency 10Hz, 5 DEG C/min of dynamic strain ± 0.5 μm and heating rate between Initial grip
Storage tensile modulus (the 1st storage tensile modulus) at -15 DEG C measured under condition (storage tensile modulus determination condition) is
1000~4000MPa, preferably 1200~3900MPa, more preferably 1500~3800MPa.Also, adhesive layer 20 is to width
Storage tensile modulus at the adhesive layer coupons measured under aforementioned storage tensile modulus determination condition 23 DEG C of degree 4mm
(the 2nd storage tensile modulus) is 10~240MPa, preferably 20~200MPa, more preferably 40~150MPa.It is stored up for stretching
Energy modulus can be based on using measurement of dynamic viscoelasticity device (trade name " Rheogel-E4000 ", UBM corporations) progress
Measurement of Dynamic Viscoelasticity is found out.In the measurement, width 4mm × length will be set as the size of the coupons of measuring object
Distance between the Initial grip of coupons holding clamp is set as 10mm, mode determination is set as stretch mode, will be measured by 20mm
Temperature range is set as -30 DEG C~100 DEG C, and frequency is set as 10Hz, and dynamic strain is set as ± 0.5%, will heat up speed and is set as 5
DEG C/min.
It has both as the effect of chip engagement bonding agent and the adhesive layer 20 of adhesive effect in -15 DEG C, peel angle
Preferred 1N/ is shown to SUS planes in disbonded test under 180 ° and 300mm/ minutes conditions of tensile speed (the 1st condition)
180 ° of peel adhesions of 10mm or more, more preferable 1.5N/10mm or more, further preferred 2N/10mm or more.The aforementioned 1st
Under the conditions of disbonded test in, which shows such as 100N/10mm or less, preferably 50N/10mm to SUS planes
180 ° of peel adhesions below.In addition, adhesive layer 20 is in 23 DEG C, 180 ° of peel angle and tensile speed 300mm/ minutes
In disbonded test under condition (the 2nd condition) to SUS planes show preferred 0.1N/10mm or more, more preferable 0.3N/10mm with
180 ° of peel adhesions of upper, further preferred 0.5N/10mm or more.In disbonded test under the conditions of the aforementioned 2nd, the bonding
Oxidant layer 20 shows such as 20N/10mm or less, preferably 10N/10mm 180 ° of peel adhesions below to SUS planes.For this
180 ° of peel adhesions of sample can use cupping machine (trade name " Autograph AGS-J ", Shimano Inc's system
Make made) it measures.Coupons for the measurement utilize facing rubber band (trade name " BT-315 ", Nitto Denko Corp
System) carry out lining, and the size with width 20mm × length 100mm.Patch of the coupons to the SUS plates as adherend
Conjunction is carried out by making reciprocal 1 crimping operation of the roller of 2kg.In addition, in this measurement, measuring temperature and/or exfoliation temperature are set
For -15 DEG C (the 1st conditions) or 23 DEG C (the 2nd conditions), peel angle is set as 180 °, and tensile speed is set as 300mm/ minutes.
When adhesive layer 20 includes heat-curing resin and thermoplastic resin, as the heat-curing resin, such as can be with
Enumerate epoxy resin, phenolic resin, amino resins, unsaturated polyester resin, polyurethane resin, organic siliconresin and thermosetting
The property changed polyimide resin.When forming adhesive layer 20, can use a kind of heat-curing resin, can also use two kinds with
Upper heat-curing resin.For the ionic impurity corroded with the semiconductor chip that may result in chip coalesced object etc.
The reasons why poor tendency, as heat-curing resin, preferred epoxy contained in adhesive layer 20.In addition, conduct
The curing agent of epoxy resin, preferably phenolic resin.
As epoxy resin, such as can enumerate:Bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenation
Bisphenol A-type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, trihydroxy phenyl
The ring of methane type, four hydroxy phenyl ethane types, hydantoins type, triglycidyl group isocyanurate type and glycidic amine type
Oxygen resin.Phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, trihydroxy benzene methylmethane type epoxy resin and four hydroxyphenyls
Ethane type epoxy resin is imbued with the reactivity with the phenolic resin as curing agent, and excellent heat resistance, it is therefore preferable that conduct
Epoxy resin contained in adhesive layer 20.
For the phenolic resin that can be worked as the curing agent of epoxy resin, such as can enumerate:Phenolic varnish type
Phenolic resin, resol type phenol resin and poly- to the polyoxies styrene such as oxygen styrene.As novolak phenolics, example
It can such as enumerate:Phenol resol resins, phenol aralkyl resin, cresol novolac resin, tert-butyl phenol phenolic aldehyde
Varnish gum and nonyl phenol novolac resin.It, can for the phenolic resin that can be worked as the curing agent of epoxy resin
To use a kind of phenolic resin, two kinds or more phenolic resin can also be used.Phenol resol resins, phenol aralkyl resin
It is reliable with the connection that can improve the bonding agent in the curing agent as the epoxy resin as chip engagement bonding agent
The tendency of property, it is therefore preferable that the curing agent as epoxy resin contained in adhesive layer 20.
In adhesive layer 20, from the viewpoint of so that the curing reaction of epoxy resin and phenolic resin is fully carried out, with this
Hydroxyl in phenolic resin reaches preferably 0.5~2.0 equivalent, more preferably relative to 1 equivalent of epoxy group in epoxy resin ingredient
The amount of 0.8~1.2 equivalent includes phenolic resin.
As thermoplastic resin contained in adhesive layer 20, such as can enumerate:It is natural rubber, butyl rubber, different
Pentadiene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate
The polyamide resins such as copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6- nylon, 6,6- nylon
The saturated polyester resins such as fat, phenoxy resin, acrylic resin, PET, PBT, polyamide-imide resin and fluororesin.?
When forming adhesive layer 20, a kind of thermoplastic resin can be used, two kinds or more thermoplastic resins can also be used.As bonding
Thermoplastic resin contained in oxidant layer 20, for ionic impurity is few and heat resistance is high and it is easy to ensure that based on adhesive layer 20
The reasons why joint reliability, preferably acrylic resin.In addition, from take into account adhesive layer 20 to the room temperature of aftermentioned ring frame and its
For stickiness at neighbouring temperature with from the perspective of residue when preventing from removing, adhesive layer 20 preferably comprises glass transition temperature
Principal component of the polymer that degree is -10~10 DEG C as thermoplastic resin.The principal component of thermoplastic resin refers in thermoplastic resin
The resin component of maximum mass ratio is accounted in fat ingredient.
For the glass transition temperature of polymer, the glass transition temperature found out based on following Fox formulas can be used
(theoretical value).Fox formulas are the homopolymer of the glass transition temperature Tg and each composition monomer in the polymer of polymer
The relational expression of glass transition temperature Tg i.In following Fox formulas, Tg indicates that the glass transition temperature (DEG C) of polymer, Wi indicate
The weight percent of the monomer i of the polymer is constituted, Tgi indicates the glass transition temperature (DEG C) of the homopolymer of monomer i.Homopolymerization
The glass transition temperature of object can use literature value, such as " 7 coating of new peak molecular library is got started with synthetic resin " (Bei Gang associations
Three write, and macromolecule prints and publishes meeting, nineteen ninety-five), in " acrylate goods catalogue (1997 year version) " (Mitsubishi Rayon Co., Ltd)
List the glass transition temperature of various homopolymers.On the other hand, for the glass transition temperature of the homopolymer of monomer,
The method specifically recorded in Japanese Unexamined Patent Publication 2007-51271 bulletins can be utilized to find out.
Fox formulas 1/ (273+Tg)=Σ [Wi/ (273+Tgi)]
The acrylic resin for including as thermoplastic resin in adhesive layer 20, which preferably comprises, derives from (methyl) third
The monomeric unit of the olefin(e) acid ester main monomer unit most as mass ratio.As such (methyl) acrylate, such as
The acrylic with an ingredient in the Radiation curing adhesive as 12 formation of adhesive phase can be used
Same (methyl) acrylate of substance described in object.The acrylic compounds for including as thermoplastic resin in adhesive layer 20
Resin can include from can be with the monomeric unit of other monomers of (methyl) acrylic ester copolymer.As such other lists
Body ingredient, such as can enumerate:Carboxyl group-containing monomer, hydroxyl monomer, contains glycidyl monomer, contains sulfonic acid anhydride monomers
Base monomer, phosphorous acid-based monomers, acrylamide, acrylonitrile etc. contain monomer, various multi-functional monomers, specifically,
The acrylic with an ingredient in the Radiation curing adhesive as 12 formation of adhesive phase can be used
As the same monomer of monomer that can be recorded with other monomers of (methyl) acrylic ester copolymer in object.From keeping adhesive layer 20 real
From the perspective of existing high cohesive force, the acrylic resin contained in adhesive layer 20 is preferably (methyl) acrylate
(especially alkyl carbon number be 4 (methyl) alkyl acrylates below), carboxyl group-containing monomer, nitrogen atom monomer with it is multifunctional
Property monomer (especially poly epihydric alcohol base system polyfunctional monomer) copolymer, more preferably ethyl acrylate, butyl acrylate,
The copolymer of acrylic acid, acrylonitrile and poly epihydric alcohol base (methyl) acrylate.
The content ratio of heat-curing resin in adhesive layer 20 is suitably shown as heat from making adhesive layer 20
From the perspective of the effect of curing type bonding agent, preferably 5~60 mass %, more preferably 10~50 mass %.
When adhesive layer 20 includes the thermoplastic resin with Thermocurable functional group, as the thermoplastic resin, such as
The acrylic resin containing Thermocurable functional group can be used.It is used to form the acrylic acid for containing Thermocurable functional group
The acrylic resin of resinoid preferably comprises the monomeric unit from (methyl) acrylate as mass ratio at most
Main monomer unit.As such (methyl) acrylate, can be used for example and as 12 formation of adhesive phase
Same (methyl) acrylate of substance described in the acrylic polymer of one ingredient of Radiation curing adhesive.
On the other hand, as the Thermocurable functional group for being used to form the acrylic resin containing Thermocurable functional group, such as can
To enumerate glycidyl, carboxyl, hydroxyl and isocyanate group.Wherein it is possible to suitable for using glycidyl and carboxyl.
That is, as the acrylic resin containing Thermocurable functional group, suitable the acrylic compounds tree containing glycidyl can be used
Fat, carboxylic acrylic resin.In addition, the curing agent as the acrylic resin containing Thermocurable functional group, example
It such as can be used as the outside of an ingredient of the Radiation curing adhesive for being sometimes considered as 12 formation of adhesive phase
The substance that crosslinking agent is recorded.Thermocurable functional group in acrylic resin containing Thermocurable functional group is glycidol
When base, as curing agent, above-mentioned various phenolic resin can be used for example suitable for using polynary phenol system compound.
For the adhesive layer 20 before curing for chip engagement, in order to realize a degree of degree of cross linking,
For example, it is preferable to will react and be bonded more with functional group of the molecule chain end of above-mentioned resin etc. contained in adhesive layer 20
Functionality compounds are compounded in as crosslinking agent in advance in adhesive layer formation resin combination.Such be formed in makes bonding
It is suitable that oxidant layer 20, which improves the aspect of adhesion properties at high temperature and seeks the improvement aspect of heat resistance,.As in this way
Crosslinking agent, such as polyisocyanate compound can be enumerated.As polyisocyanate compound, such as can enumerate:
Toluene di-isocyanate(TDI), methyl diphenylene diisocyanate, paraphenylene diisocyanate, 1,5- naphthalene diisocyanates and polyalcohol
With the addition compound product of diisocyanate.For the content of the crosslinking agent in adhesive layer formation resin combination, relative to tool
100 mass parts of resin for having the above-mentioned functional group that can be reacted and be bonded with the crosslinking agent, adhesive layer 20 is formed by from raising
Cohesive force from the perspective of, it is more than preferably 0.05 mass parts, from improve be formed by adhesive layer 20 bonding force sight
Point sets out, and preferably 7 is below mass part.In addition, as the crosslinking agent in adhesive layer 20, it can be other more by epoxy resin etc.
Functionality compounds are applied in combination with polyisocyanate compound.
The content ratio of above such high molecular weight components in adhesive layer 20 is preferably 50~100 mass %, more
Preferably 50~80 mass %.High molecular weight components refer to the ingredient of 10000 or more weight average molecular weight.Such be formed in is sought
Adhesive layer 20 at the room temperature of aftermentioned ring frame and its neighbouring temperature stickiness and prevent stripping when residue it is simultaneous
It is preferred in terms of Gu.In addition, adhesive layer 20 may be embodied in the liquid resin for liquid at 23 DEG C.Adhesive layer 20 includes
When such liquid resin, the liquid resinous content ratio in adhesive layer 20 is preferably 1~10 mass %, is more preferably
1~5 mass %.Such be formed in seeks adhesive layer 20 to the fitting at the room temperature of aftermentioned ring frame and its neighbouring temperature
Property and prevent stripping when residue take into account aspect be preferred.
Adhesive layer 20 can contain filler.By being compounded filler in adhesive layer 20, adhesive layer 20 can be adjusted
The physical property such as elasticity modulus, electric conductivity, the thermal conductance such as storage tensile modulus.As filler, inorganic filler can be enumerated and had
Machine filler, particularly preferred inorganic filler.As inorganic filler, such as can enumerate:Aluminium hydroxide, magnesium hydroxide, calcium carbonate,
Magnesium carbonate, calcium silicates, magnesium silicate, calcium oxide, magnesia, aluminium oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica
The metal simple-substances such as silicon, amorphous silica and aluminium, gold, silver, copper, nickel, alloy, amorphous carbon black, graphite.Filler can be with
With spherical, needle-shaped, laminar etc. variously-shaped.As the filler in adhesive layer 20, a kind of filler can be used, it can also
Use two kinds or more fillers.In terms of adhesive layer 20 is to the stickiness of ring frame in ensuring aftermentioned low temperature extension process, glue
It is preferably 30 mass % or less, more preferably 25 mass % or less to connect the filler content ratio in oxidant layer 20.
The average grain diameter of filler when adhesive layer 20 is containing filler is preferably 0.005~10 μm, is more preferably 0.005
~1 μm.The average grain diameter of the filler, which is 0.005 μm or more is formed in, makes the realization of adhesive layer 20 glue semiconductor crystal wafer etc.
The high wettability of object, cementability aspect are suitable.The average grain diameter of the filler is 10 μm and below is formed in adhesive layer 20
It is suitable in terms of obtaining sufficient filler additive effect and ensuring heat resistance.The average grain diameter of filler uses such as light
The particle size distribution meter (trade name " LA-910 ", Horiba Ltd make) of degree formula is found out.
Adhesive layer 20 can include other ingredients as needed.As other ingredients, such as can enumerate:It is fire-retardant
Agent, silane coupling agent and ion trap agent.As fire retardant, such as antimony trioxide, antimony pentaoxide and bromination can be enumerated
Epoxy resin.As silane coupling agent, such as can enumerate:β-(3,4- epoxycyclohexyls) ethyl trimethoxy silane, γ-
Glycidoxypropyltrime,hoxysilane and γ-glycidoxypropyl diethoxy silane.As ion trap
Agent, such as can enumerate:Hydrotalcite, bismuth hydroxide, the aqua oxidation antimony (such as " IXE- of Toagosei Co., Ltd
300 "), the basic zirconium phosphate (such as " IXE-100 " of Toagosei Co., Ltd) of specific structure, magnesium silicate (such as consonance chemistry
Industrial Co., Ltd " Kyoward 600 ") and alumina silicate (such as Kyowa Chemical Industry Co., Ltd " Kyoward
700").The compound that complex compound can be formed between metal ion can also be used as ion trap agent use.As suchization
Object is closed, such as can be enumerated:Three azole compounds, four azole compounds and bipyridyl based compound.Wherein, from metal
From the perspective of the stability of the complex compound formed between ion, preferably three azole compounds.As such triazole system chemical combination
Object, such as can enumerate:L, 2,3 triazole, 1- { bis- (2- ethylhexyls) amino methyls of N, N- } benzotriazole, carboxyl
Benzotriazole, 2- (2- hydroxy-5-methyl bases phenyl) benzotriazole, 2- (2- hydroxyl -3,5- di-tert-butyl-phenyls) -5- chlorobenzenes and three
Azoles, 2- (2- hydroxyl -3- tertiary butyl -5- aminomethyl phenyls) -5- chlorobenzotriazoles, 2- (2- hydroxyl -3,5- di-tert-pentyl-phenyls) benzene
And triazole, 2- (2- hydroxyl -5- t-octyls phenyl) benzotriazole, 6- (2 benzotriazole base) -4- t-octyl -6'- tertiary butyls -
4'- methyl -2,2' methylene bis phenol, 1- (2,3- dihydroxypropyls) benzotriazole, 1- (1,2- dicarboxyls diethyl) benzo three
Azoles, 1- (2- ethylhexylaminos methyl) benzotriazole, bis- tertiary pentyl -6- of 2,4- { (H- benzotriazole -1- bases) methyl } phenol,
2- (2- hydroxyl -5- tert-butyl-phenyls) -2H- benzotriazole, octyl -3- [3- tertiary butyl-4-hydroxies -5- (the chloro- 2H- benzos of 5- three
Azoles -2- bases) phenyl] propionic ester, 2- ethylhexyls -3- [3- tertiary butyl-4-hydroxies -5- (the chloro- 2H- benzotriazole -2- bases of 5-) benzene
Base] propionic ester, 2- (2H- benzotriazole -2- bases) -6- (1- methyl-1s-phenylethyl) -4- (1,1,3,3- tetramethyl butyls) benzene
Phenol, 2- (2H- benzotriazole -2- bases) -4-TBP, 2- (2- hydroxy-5-methyl bases phenyl) benzotriazole, 2- (2- hydroxyls -
5- t-octyls phenyl)-benzotriazole, 2- (3- tertiary butyl -2- hydroxy-5-methyl bases phenyl) -5- chlorobenzotriazoles, 2- (2- hydroxyls -
3,5- di-tert-pentyl-phenyls) benzotriazole, 2- (2- hydroxyl -3,5- di-tert-butyl-phenyls) chloro- benzotriazole of -5-, 2- [2- hydroxyls
Base -3,5- two (1,1- dimethyl benzyls) phenyl] -2H- benzotriazole, 2,2' methylene bis [6- (2H- benzotriazole -2-
Base) -4- (1,1,3,3- tetramethyl butyls) phenol], 2- [bis- (bis (alpha, alpha-dimethylbenzyl) base) phenyl of 2- hydroxyls -3,5-] -2H- benzos
Triazole and methyl -3- [3- (2H- benzotriazole -2- bases) -5- tert-butyl-hydroxy phenyls] propionic ester.In addition, hydroquinone
Hydroxy-containing compounds, which can also be used as ion trap agent, as defined in compound, hydroxy-anthraquione compound, polyphenol compound etc. makes
With.As such hydroxy-containing compounds, specific examples thereof include:1,2- benzenediols, alizarin, 1,5- dihydroxy anthraquinones, tannic acid,
Gallic acid, gallicin, pyrogallol etc..As above such other ingredients, a kind of ingredient can be used, also may be used
To use two kinds or more ingredients.
Range of the thickness of adhesive layer 20 at such as 1~200 μm.The upper limit of the thickness is preferably 100 μm, is more preferably
80μm.The lower limit of the thickness is preferably 3 μm, more preferably 5 μm.
In present embodiment, cutting die bonding film X have comprising base material 11, adhesive phase 12 and adhesive layer 20 and
In inside region R2 and the continuous stepped constructions of lateral area R1.The thickness of such cutting die bonding film X is preferably outside
Side region R1 and inside region R2 are identical.In addition, in present embodiment, the direction D in the face of cutting die bonding film X glues
The outer circumference end 20e for connecing oxidant layer 20 is located at the outer circumference end 12e of outer circumference end 11e and adhesive phase 12 away from the base material 11 in cutting belt 10
At distance within 1000 μm, within preferably 500 μm.That is, the complete cycle of the outer circumference end 20e of adhesive layer 20 direction in pellicular front
D is located between 1000 μm of 1000 μm of inside to the outside of the outer circumference end 11e of base material 11, preferably 500 μm of 500 μm of inside to outside it
Between, also, between 1000 μm of 1000 μm of the inside of the outer circumference end 12e of adhesive phase 12 to outside, preferably 500 μm of inside is extremely
Between 500 μm of outside.The direction D in face has essence with adhesive layer 20 thereon for cutting belt 10 and/or its adhesive phase 12
In this composition of upper identical size, adhesive layer 20 includes the region in the region and frame fitting of workpiece fitting.
Cutting die bonding film X can carry slider S as shown in Figure 2.Specifically, can be each cutting chip
The form of sheets of the bonding film X with slider S can also be that slider S is strip, is configured with multiple cuttings on it
Die bonding film X and slider S wind and are formed as the form of volume.Slider S is thin for the engagement of coating cutting chip
The surface of the adhesive layer 20 of film X and the element protected are removed the film when using cutting die bonding film X.
As slider S, such as can enumerate:Polyethylene terephthalate (PET) film, polyethylene film, polypropylene are thin
Film, the plastic film that surface coating has been carried out with removers such as fluorine system remover, long-chain aliphatic acrylate series stripping agents, stationery
Deng.The thickness of slider S is such as 5~200 μm.
It for example can be such as manufacture of getting off with above such cutting die bonding film X constituted.
Sheet body for be processed to form the cutting belt 10 to cut die bonding film X can as shown in (a) of Fig. 3
To be processed to form as the adhesive phase of adhesive phase 12 by being arranged on being processed to form the base material 11' for base material 11
12' makes.The base material 11' of resin can be by rolling film method, the casting method in organic solvent, blowing in enclosed system
The film-forming methods such as swollen extrusion molding, T moulds extrusion molding, coetrusion, dry lamination method make.For after film film and/or
Base material 11' implements defined surface treatment as needed.In the formation of adhesive phase 12', such as preparing adhesive phase shape
At binder solution after, first, which is coated on base material 11' or on defined slider, formed
Adhesive film.As the coating method of binder solution, such as can enumerate:Roll coating, silk screen coating and intaglio plate apply
It covers.Then, cross-linking reaction is brought it about as needed by heating for the adhesive film, in addition, carrying out as needed
Desolventizing.Heating temperature is such as 80~150 DEG C, and heating time is such as 0.5~5 minute.Adhesive phase 12' is formed in isolation
When on body, the adhesive phase 12' with the slider is fitted in into base material 11', later removes slider.As above operation, energy
It is enough to make the adhesive tape 10' as sheet body that be processed to form as cutting belt 10.
On the other hand, as shown in (b) of Fig. 3, the adhesive film 20' that be processed to form as adhesive layer 20 is made.
In the making of adhesive film 20', after the adhesive composite for preparing adhesive layer formation, first, by the bonding agent
Composition is coated on slider S, forms adhesive composite layer.As the coating method of adhesive composite layer, such as can
To enumerate roll coating, silk screen coating and rotogravure application.Then, for the adhesive composite layer, by heating, as needed
Cross-linking reaction is brought it about, in addition, carrying out desolventizing as needed.Heating temperature is such as 70~160 DEG C, for heating time
Such as 1~5 minute.As above operation, can make the adhesive film 20' with slider S.
In the manufacture of cutting die bonding film X, then, as shown in (c) of Fig. 3, by the adhesive of above-mentioned adhesive tape 10'
The layer sides 12' crimp and are bonded with adhesive film 20'.Making as a result, has comprising slider S, adhesive film 20', bonding
The stacking sheet body of the stepped construction of oxidant layer 12' and base material 11'.In this process, binding temperature is such as 30~50 DEG C, is preferably
35~45 DEG C.Laminate pressure (line pressure) is such as 0.1~20kgf/cm, preferably 1~10kgf/cm.Adhesive phase 12 is as above
When the described radiation-curable adhesive layer, ultraviolet light is irradiated to adhesive phase 12' after the fitting of adhesive film 20'
When israds, irradiation with radiation is carried out to adhesive phase 12' from the sides such as base material 11' of adhesive tape 10', exposure is for example
50~500mJ/cm2, preferably 100~300mJ/cm2.Its irradiation area is adhesive that for example will be closely sealed with adhesive layer 20
Layer 12 is whole.In addition, in the present invention, adhesive phase 12' and/or adhesive phase 12 are designed as ultraviolet hardening israds
When the adhesive phase of curing type, adhesive film 20' and/or adhesive layer 20 also have not because of the irradiation of ultraviolet light israds
And cured composition.
Then, as shown in (d) of Fig. 3, to above-mentioned stacking sheet body implementation make processing knife from the sides base material 11' enter to arrival every
Processing (schematically showing off-position with thick line in (d) of Fig. 3) until in vitro S.For example, making stacking sheet body along a side
Moved to F with fixed speed, at the same make to configure in the way of it can surround the axle center orthogonal with direction F and be rotated and
The surface companion with processing knife of the rotating roller (illustration omitted) of the band processing knife of processing knife of the roller surface with punch press process
It is connected to 11 ' the side of base material of stacking sheet body with having regulation extruding force.As a result, disposably processing formed cutting belt 10 (base material 11,
Adhesive phase 12) and adhesive layer 20, cutting die bonding film X is formed on partition board S.Then, as shown in (e) of Fig. 3, from
Material laminated section on partition board S around removal cutting die bonding film X.
As above operation can manufacture cutting die bonding film X.
In the manufacturing process of semiconductor device, as described above, carrying the semiconductor chip of adhesive layer in order to obtain, have
When implement use cutting die bonding film carry out extension process, the extension process for cutting off, in extending process, need
Make to cut off the workpiece such as die bonding film and the semiconductor crystal wafer that power suitably acts in cutting belt.In cutting chip engagement
In film X, the relative to the lateral area R1 from outer circumference end until 20mm inwardly from the film the above-mentioned 1st
Above-mentioned 1st tensile stress of the test film at -15 DEG C, inside region R2 from same film above-mentioned 2nd test film
The ratio of above-mentioned 2nd tensile stress at -15 DEG C is 0.9~1.1, preferably 0.95~1.05.Such composition is suitable for
Make comprising upper in the low temperature extension process cut off implemented under for -15 DEG C of the temperature lower than room temperature and its neighbouring temperature
The cutting die bonding film X for stating lateral area R1 and inside region R2 realizes the homogenization of its elongation degree.Therefore, has this
The cutting die bonding film X of composition be adapted for carrying out in low temperature extension process act on adhesive layer 20 in cutting belt 10,
The homogenization for cutting off power of workpiece is suitable for well cutting off them.
The cutting die bonding film X that elongation degree when extending like this realizes homogenization can be in its bonding agent
Mode of the layer 20 comprising workpiece fitting region and frame fitting region is set with substantially the same size in the direction in pellicular front
Count cutting belt 10 and/or its adhesive phase 12 and adhesive layer 20 thereon.As shown in the embodiment, it may be used and cutting
Direction in the face of die bonding film X, the outer circumference end of adhesive layer 20 are located at each periphery of the adhesive phase 12 away from cutting belt 10
The design at distance within 1000 μm of end.Such cutting die bonding film X is suitable for adding by punch press process etc.
Work is disposably implemented to be used to form the processing of a cutting belt 10 of the stepped construction with base material 11 and adhesive phase 12 and be used
In the processing for forming an adhesive layer 20.Such cutting die bonding film X is suitable for as described above in extending process
Adhesive layer 20 is cut off well, also, from cutting down the viewpoint of manufacturing process number, inhibit the viewpoint grade of manufacturing cost,
It is suitable for efficiently manufacturing.
Die bonding film X is cut as described above with comprising base material 11, adhesive phase 12 and adhesive layer 20 and inside
Side region R2 and the continuous stepped constructions of lateral area R1.In addition, the thickness of cutting die bonding film X preferably exists as described above
Inside region R2 and lateral area R1 are identical.These are excellent in terms of being formed in above-mentioned good the cutting off property realized in extension process
Choosing.
It is preferred as described above to cut above-mentioned 1st tensile stresses and 2nd tensile stress of the die bonding film X at -15 DEG C
For 5N or more, more preferably 8N or more, further preferably 10N or more.Such be formed in ensures at -15 DEG C and its nearby
At a temperature of cutting die bonding film X extension when to act on cutting off in terms of power for adhesive layer 20 be preferred.In addition, cutting
Cut above-mentioned 1st tensile stresses and 2nd tensile stress of the die bonding film X at -15 DEG C as described above be preferably 28N or less,
More preferably 25N or less, further preferably 20N or less.It is such to be formed in inhibition at -15 DEG C and its at neighbouring temperature
It is preferred in terms of stripping when cutting the extension of die bonding film X between the adhesive phase 12 and adhesive layer 20 of cutting belt 10
's.
The adhesive layer 20 of die bonding film X is cut as described above in -15 DEG C, 180 ° of peel angle and tensile speed
Preferred 1N/10mm or more, more preferable 1.5N/10mm are shown to SUS planes in disbonded test under conditions of 300mm/ minutes
Above, 180 ° of peel adhesions of further preferred 2N/10mm or more.In addition, the stripping of adhesive layer 20 under the same conditions
Such as 100N/10mm or less, preferably 50N/10mm 180 ° of peel adhesions below are shown to SUS planes in separating test.It closes
Ensuring to connect based on cutting chip under for -15 DEG C of the temperature lower than room temperature and its neighbouring temperature in this composition of bonding force
It is suitable in terms of closing the holding of the frame component of film X.
Cut die bonding film X between the 1st test film Initial grip distance 20mm, 23 DEG C and tensile speed
It the 3rd tensile stress that is generated in strain value 30% in the tension test carried out under conditions of 300mm/ minutes and is tried to the 2nd
Test the stretching that piece carries out under identical conditions (between Initial grip distance 20mm, 23 DEG C, 300mm/ minutes conditions of tensile speed)
The 4th tensile stress generated in strain value 30% in experiment is preferably 1N or more, more preferably 3N or more as described above, into one
Step is preferably 5N or more.Such composition is adapted for carrying out the cutting chip comprising above-mentioned lateral area R1 and inside region R2 and connects
Close the homogenization of elongation degree when film X extends under 23 DEG C and its neighbouring temperature.In addition, these the 3rd tensile stresses and
4th tensile stress is preferably 20N or less, more preferably 15N or less, further preferably 10N or less as described above.Such structure
At the adhesive phase 12 of the cutting belt 10 in the extension for inhibiting the cutting die bonding film X under 23 DEG C and its neighbouring temperature
It is suitable in terms of stripping between adhesive layer 20.
The 4th tensile stress for cutting die bonding film X is preferred as described above relative to the ratio of above-mentioned 3rd tensile stress
It is 0.95~1.05.Such composition is adapted for carrying out the engagement of the cutting chip comprising above-mentioned lateral area R1 and inside region R2
The homogenization of elongation degree when film X extends under 23 DEG C and its neighbouring temperature.
The adhesive layer 20 of die bonding film X is cut as described above in 23 DEG C, 180 ° of peel angle and tensile speed
Preferred 0.1N/10mm or more, more preferable 0.3N/ are shown to SUS planes in disbonded test under conditions of 300mm/ minutes
180 ° of peel adhesions of 10mm or more, further preferred 0.5N/10mm or more.It is such be formed in ensure it is at 23 DEG C and its attached
It is suitable in terms of the holding of frame component based on cutting die bonding film X at close temperature.In addition, the adhesive layer 20 is such as
In the disbonded test under the same conditions to SUS planes show such as 20N/10mm or less, preferably 10N/10mm with
Under 180 ° of peel adhesions.Such composition is suitable for inhibiting in the adhesive layer 20 from cutting die bonding film X by ring
The frame component generates bonding agent residue when the frames component such as shape frame is removed.
Fig. 4~Fig. 9 indicates the manufacturing method for semiconductor device of an embodiment of the invention.
In this manufacturing method for semiconductor device, first, as shown in (a) of Fig. 4 and (b) of Fig. 4, on semiconductor crystal wafer W
Form slot segmentation 30a (slot segmentation formation process).Semiconductor crystal wafer W has the 1st face Wa and the 2nd face Wb.Semiconductor crystal wafer W's
The 1st face sides Wa has been mounted with various semiconductor elements (illustration omitted) and has formd the semiconductor on the 1st face Wa
Wire structures necessary to element etc. (illustration omitted).In this process, in the wafer processing adhesive tape T1 quilts with adhesive surface T1a
It fits in after the 2nd face sides Wb of semiconductor crystal wafer W, the state of semiconductor crystal wafer W is maintained on wafer processing adhesive tape T1
Under the slot segmentation 30a of prescribed depth is formed using the rotating knifes such as cutter device in the 1st face sides Wa of semiconductor crystal wafer W.Slot segmentation
30a is that the gap for making semiconductor crystal wafer W be separated into semiconductor core blade unit (is schematically shown point in Fig. 4~Fig. 6 with thick line
Cut slot 30a).
Then, as shown in (c) of Fig. 4, have the wafer processing adhesive tape T2 of adhesive surface T2a to semiconductor crystal wafer W
The 1st face sides Wa fitting and wafer processing adhesive tape T1 from the stripping of semiconductor crystal wafer W.
Then, as shown in (d) of Fig. 4, pass through in the state of maintaining semiconductor crystal wafer W on wafer processing adhesive tape T2
Semiconductor crystal wafer W is thinned to defined thickness (wafer thinning process) by the grinding from the 2nd face Wb.Grinding can be with
It is carried out using the abrasive machining device for having grinding grinding stone.By the wafer thinning process, energy is formed in the present embodiment
Monolithic turns to the semiconductor crystal wafer 30A of multiple semiconductor chips 31.Semiconductor crystal wafer 30A specifically has in the wafer
The 2nd face sides Wb will be singulated the position (interconnecting piece) of the position connection for multiple semiconductor chips 31.Semiconductor crystal wafer 30A
In interconnecting piece thickness, i.e. between the front end of the 2nd face sides Wb of the 2nd face Wb and slot segmentation 30a of semiconductor crystal wafer 30A at a distance from
It is such as 1~30 μm, preferably 3~20 μm.
Then, as shown in (a) of Fig. 5, the adhesive layer 20 to cutting die bonding film X is bonded by wafer processing glue
The semiconductor crystal wafer 30A kept with T2.Later, as shown in (b) of Fig. 5, from semiconductor crystal wafer 30A by wafer processing adhesive tape T2
Stripping.When adhesive phase 12 in cutting die bonding film X is radiation-curable adhesive layer, cutting chip can be replaced
Above-mentioned irradiation with radiation in the manufacturing process of bonding film X, semiconductor crystal wafer 30A to after the fitting of adhesive layer 20 from
Ultraviolet light israds is irradiated in 11 side of base material to adhesive phase 12.Exposure is such as 50~500mJ/cm2, preferably 100~
300mJ/cm2.To carry out reducing the region of the irradiation of measure in cutting die bonding film X as the bonding force of adhesive phase 12
(irradiation area L shown in FIG. 1) be such as adhesive phase 12 in 20 fit area of adhesive layer in addition to its peripheral part
Region.
Then, after attaching ring frame 41 on the adhesive layer 20 in cutting die bonding film X, such as (a) institute of Fig. 6
Show, the cutting die bonding film X with semiconductor crystal wafer 30A is fixed on to the holding tool 42 of expanding unit.
Then, the 1st extension process (cooling extension process) under conditions of relative low temperature is carried out as shown in (b) of Fig. 6, it will
Semiconductor crystal wafer 30A monolithics turn to multiple semiconductor chips 31, and the adhesive layer 20 for cutting die bonding film X is cut off
For the adhesive layer 21 of small pieces, the semiconductor chip 31 with adhesive layer is obtained.In this process, expanding unit is made to have
The jack-up component 43 of hollow cylindrical downside in the figure of cutting die bonding film X is connected to cutting belt 10 and rises, and presses
According to along the two-dimensional directional radially and circumferentially including semiconductor crystal wafer 30A to being fitted with the cutting of semiconductor crystal wafer 30A
The mode that the cutting belt 10 of die bonding film X is stretched is extended.The extension so that in cutting belt 10 generate 15~
32MPa, tensile stress preferably in the range of 20~32MPa condition carry out.Cooling down the temperature condition extended in process is
Such as 0 DEG C hereinafter, preferably -20~-5 DEG C, more preferably -15~-5 DEG C, further preferably -15 DEG C.Cooling extension process
In expansion rate (jack up component 43 rise speed) be preferably 0.1~100mm/ seconds.In addition, the expansion in cooling extension process
Exhibition amount is preferably 3~16mm.
In this process, relatively thin and crackly position is cut off in semiconductor crystal wafer 30A, is occurred to semiconductor core
The singualtion of piece 31.At the same time, in this process, the closely sealed adhesive layer with the adhesive phase 12 of the cutting belt 10 extended
20 deform in the closely sealed each region of each semiconductor chip 31 and are suppressed, on the other hand, point between semiconductor chip 31
It cuts at the opposite position of slot, does not generate such deformation inhibiting effect, in such a state, the stretching generated in cutting belt 10
Stress plays a role.As a result, the opposite position of slot segmentation in adhesive layer 20 between semiconductor chip 31 is cut off.This
After process, as shown in (c) of Fig. 6, so that jack-up component 43 is declined and release the extended mode of cutting belt 10.
Then, the 2nd extension process under conditions of relatively-high temperature is carried out as shown in (a) of Fig. 7, is made with adhesive layer
Distance (spacing distance) between semiconductor chip 31 is widened.In this process, the hollow cylindrical that again has expanding unit
The component 43 that jacks up of shape rises and extends the cutting belt 10 for cutting die bonding film X.2nd extension process in temperature condition be
Such as 10 DEG C or more, preferably 15~30 DEG C.For expansion rate (jacking up the speed that component 43 rises) in 2nd extension process
Such as 0.1~10mm/ seconds, preferably 0.3~1mm/ seconds.In addition, the propagation in the 2nd extension process is such as 3~16mm.At this
In process, the spacing distance of the semiconductor chip 31 with adhesive layer is made to widen to can be suitable by aftermentioned pickup process
Degree of the ground from semiconductor chip 31 of the pickup of cutting belt 10 with adhesive layer.After this process, as shown in (b) of Fig. 7
So that jack-up component 43 is declined, releases the extended mode of cutting belt 10.Inhibiting to release carrying in cutting belt 10 after extended mode
In terms of the spacing distance of the semiconductor chip 31 of adhesive layer narrows, preferably in cutting belt 10 before releasing extended mode
The exterior portion of 31 holding area of semiconductor chip is heated, makes its contraction.
Then, as needed through cleaning solutions such as utilization water to the cutting with the semiconductor chip 31 with adhesive layer
After the cleaning process cleaned with 10 31 side of semiconductor chip, as shown in figure 8, the pickup of Self cleavage band 10 carries bonding agent
The semiconductor chip 31 (pickup process) of layer.For example, for the semiconductor chip 31 with adhesive layer as pickup object,
Downside makes the acicular member 44 of mechanism for picking rise after cutting belt 10 is jacked up in the figure of cutting belt 10, utilizes
Suction jig 45 is adsorbed holding.In pickup process, the jack-up speed of acicular member 44 is such as 1~100mm/ seconds, needle
The jack-up amount of shape component 44 is such as 50~3000 μm.
Then, as shown in (a) of Fig. 9, by the semiconductor chip 31 with adhesive layer picked up by adhesive layer
21 are temporarily fixed to defined adherend 51.As adherend 51, it can be mentioned, for example:Lead frame, TAB (tape automated bondings;
Tape Automated Bonding) film, circuit board, the semiconductor chip in addition made.Adhesive layer 21 is solid temporarily
Shear bond power of the timing at 25 DEG C is preferably 0.2MPa or more, more preferably 0.2~10MPa relative to adherend 51.It is viscous
The composition that the shear bond power for connecing oxidant layer 21 is 0.2MPa or more in aftermentioned wire bonding sequence for inhibiting due to super
Acoustic vibration, heating and generated in adhesive layer 21 and the bonding plane of semiconductor chip 31 or adherend 51 shear-deformable and suitable
It is suitable that ground, which carries out wire bonding,.In addition, shear bond power of the adhesive layer 21 when temporary fixed at 175 DEG C relative to
Adherend 51 is preferably 0.01MPa or more, more preferably 0.01~5MPa.
Then, as shown in (b) of Fig. 9, electrode pad (illustration omitted) and the adherend 51 of semiconductor chip 31 are had
Some portion of terminal (illustration omitted) are electrically connected (wire bonding sequence) by bonding wire 52.The electrode of semiconductor chip 31
Pole plate, the portion of terminal of adherend 51 and the connection of bonding wire 52 can be realized by the ultrasonic bonding with heating, with
Carry out the mode of 21 heat cure of adhesive layer.As bonding wire 52, such as gold thread, aluminum steel or copper wire can be used.
Lead heating temperature in wire bonding is such as 80~250 DEG C, preferably 80~220 DEG C.In addition, its heating time is the several seconds
~several minutes.
Then, as shown in (c) of Fig. 9, by for protecting semiconductor chip 31 on adherend 51, bonding wire 52
Semiconductor chip 31 is sealed (sealing process) by sealing resin 53.In this process, the heat cure of adhesive layer 21 is carried out.At this
In process, such as sealing resin 53 formed by using the transfer molding technology that mold carries out.Structure as sealing resin 53
At material, such as epoxy system resin can be used.In this process, the heating temperature for being used to form sealing resin 53 is for example
165~185 DEG C, heating time is such as 60 seconds~several minutes.When sealing resin 53 is not abundant in this process (sealing process)
When being cured, the rear curing process for making sealing resin 53 be fully cured is carried out after this process.Even if in sealing work
In sequence in the case of the incomplete heat cure of adhesive layer 21, can also together it be glued with sealing resin 53 in rear curing process
Connect the complete heat cure of oxidant layer 21.In rear curing process, heating temperature is such as 165~185 DEG C, and heating time is for example
0.5~8 hour.
As above operation, can manufacture semiconductor device.
In present embodiment, as described above, the semiconductor chip 31 with adhesive layer is temporarily fixed to adherend 51
Later, wire bonding sequence is carried out in the state that adhesive layer 21 is not up to complete heat cure.Instead of such composition,
It, can also be after the semiconductor chip 31 with adhesive layer be temporarily fixed to adherend 51, in bonding agent in the present invention
Wire bonding sequence is carried out again after 21 heat cure of layer.
In the manufacturing method of the semiconductor device of the present invention, wafer thinning process shown in Fig. 10 can be carried out to replace
With reference to the above-mentioned wafer thinning process of (d) of Fig. 4.After the above process with reference to (c) of Fig. 4, in wafer shown in Fig. 10
In thinning process, in the state of maintaining semiconductor crystal wafer W on wafer processing adhesive tape T2, pass through the mill from the 2nd face Wb
It cuts processing and the wafer is thinned to specific thickness, formed comprising multiple semiconductor chips 31 and be held in wafer processing adhesive tape
The semiconductor crystal wafer dividing body 30B of T2.In this process, may be used by wafer be ground to slot segmentation 30a its own in the 2nd face
Method (the 1st method) until the exposing of the sides Wb, can also be with the following method:Wafer is ground from the 2nd face sides Wb to will be to
Up to slot segmentation 30a, then the extruding force effect of wafer is made to generate between slot segmentation 30a and the 2nd face Wb using grindstone and be split
Line, to form semiconductor crystal wafer dividing body 30B (the 2nd method).According to used method suitable for determining (a) with reference to Fig. 4
With the slot segmentation 30a as formed above of (b) of Fig. 4, depth from the 1st face Wa.In Fig. 10, it is schematically shown with thick line
Via slot segmentation 30a made of the 1st method or via slot segmentation 30a and coupled crackle made of the 2nd method.?
In the present invention, the semiconductor crystal wafer dividing body 30B that operation as above makes can be fitted in into cutting instead of semiconductor crystal wafer 30A
Die bonding film X, and carry out the above-mentioned each process with reference to Fig. 5~Fig. 9.
Semiconductor crystal wafer dividing body 30B is being fitted in cutting die bonding film by (b) expression of (a) and Figure 11 of Figure 11
The 1st extension process (cooling extension process) carried out after X.In this process, the hollow cylindrical that makes expanding unit have
Jack-up component 43 be connected to cutting belt 10 in the figure of cutting die bonding film X and rise in downside, with along including partly leading
The two-dimensional directional radially and circumferentially of body wafer dividing body 30B is to being fitted with the cutting core of semiconductor crystal wafer dividing body 30B
The mode that the cutting belt 10 of chip bonding film X is stretched is extended.The extension with generate such as 5 in cutting belt 10~
28MPa, tensile stress preferably in the range of 8~25MPa condition carry out.Temperature condition in this process is such as 0 DEG C
Hereinafter, preferably -20~-5 DEG C, more preferably -15~-5 DEG C, further preferably -15 DEG C.Expansion rate in this process
(jacking up the speed that component 43 rises) is, for example, 1~400mm/ seconds.In addition, the propagation in this process is, for example, 50~200mm.
Cooling extension process in this way, the adhesive layer 20 of cutting die bonding film X are cut off adhesive layer 21 for small pieces,
To obtain the semiconductor chip 31 with adhesive layer.It is viscous with the cutting belt 10 that is extended specifically, in this process
The closely sealed adhesive layer 20 of the mixture layer 12 each region closely sealed in each semiconductor chip 31 of semiconductor crystal wafer dividing body 30B
In, deformation is suppressed, and on the other hand, is not generated at the opposite positions the slot segmentation 30a between semiconductor chip 31 this
Inhibiting effect is deformed, the tensile stress generated in cutting belt 10 in this state plays a role.As a result, in adhesive layer 20
In be cut off at the opposite position slot segmentation 30a between semiconductor chip 31.
In the manufacturing method for semiconductor device of the present invention, semiconductor crystal wafer 30A or semiconductor crystal wafer can also be replaced to divide
Body 30B fits in the above-mentioned composition of cutting die bonding film X, and the semiconductor crystal wafer 30C for operating making as follows is made to fit in
Cut die bonding film X.
As shown in (a) of Figure 12 and (b) of Figure 12, modification area 30b is formed first in semiconductor crystal wafer W.Semiconductor
Wafer W has the 1st face Wa and the 2nd face Wb.The 1st face sides Wa in semiconductor crystal wafer W have been mounted with that various semiconductor elements (save
Sketch map shows), and wire structures etc. (illustration omitted) necessary to the semiconductor element has been formd on the 1st face Wa.This
In process, after the wafer processing adhesive tape T3 with adhesive surface T3a to be fitted in the 1st face sides Wa of semiconductor crystal wafer W, in crystalline substance
The circle processing state that semiconductor crystal wafer W is maintained on adhesive tape T3, half-and-half leads from the side opposite with wafer processing adhesive tape T3
Body wafer W is located at the laser of inside wafer along its pre-segmentation line irradiation focal point, is melted using caused by Multiphoton Absorbtion
Modification area 30b is formed in semiconductor crystal wafer W.Modification area 30b is for making semiconductor crystal wafer W be separated into semiconductor chip
The crisp atenuator region of unit.On pre-segmentation line form modification area 30b's in semiconductor crystal wafer about by laser irradiation
Method is documented in such as Japanese Unexamined Patent Publication 2002-192370 bulletins, the laser irradiation condition example in the embodiment
It such as can be in the range of the following conditions suitable for adjustment.
< laser irradiation conditions >
(A) laser
(B) optically focused lens
100 times of multiplying power or less
NA 0.55
To 100% or less the transmissivity of optical maser wavelength
(C) it is placed with movement speed 280mm/ seconds or less of the mounting table of semiconductor substrate
Then, as shown in (c) of Figure 12, to maintain the state of semiconductor crystal wafer W on wafer processing adhesive tape T3, lead to
Semiconductor crystal wafer W is thinned to defined thickness by the grinding crossed from the 2nd face Wb, and formation energy monolithic turns to multiple as a result,
The semiconductor crystal wafer 30C (wafer thinning process) of semiconductor chip 31.In the present invention, it can be incited somebody to action instead of semiconductor crystal wafer 30A
As above the semiconductor crystal wafer 30C that operation makes fits in cutting die bonding film X, and carries out with reference to the above-mentioned each of Fig. 5~Fig. 9
Process.
(a) of Figure 13 and (b) of Figure 13 is indicated after semiconductor crystal wafer 30C to be fitted in cutting die bonding film X
The 1st extension process (cooling extension process) carried out.In this process, make the top for the hollow cylindrical that expanding unit has
It plays the downside in the figure of cutting die bonding film X of component 43 to be connected to cutting belt 10 and rise, with along including semiconductor die
The two-dimensional directional radially and circumferentially of circle 30C is to being fitted with the cutting of the cutting die bonding film X of semiconductor crystal wafer 30C
It is extended with the mode that 10 are stretched.The extension is so as to generate such as 5~28MPa, preferably 8~25MPa in cutting belt 10
In the range of the condition of tensile stress carry out.Temperature condition in this process is such as 0 DEG C hereinafter, preferably -20~-5
DEG C, more preferably -15~-5 DEG C, further preferably -15 DEG C.Expansion rate in this process (jacks up the speed that component 43 rises
Degree) it is, for example, 1~400mm/ seconds.In addition, the propagation in this process is, for example, 50~200mm.Cooling extension in this way
Process, the adhesive layer 20 of cutting die bonding film X is cut off adhesive layer 21 for small pieces, to obtain carrying bonding agent
The semiconductor chip 31 of layer.Specifically, in this process, in semiconductor crystal wafer 30C at fragile modification area 30b shape
At crackle, monolithic turns to semiconductor chip 31.At the same time, in this process, the adhesive phase with the cutting belt 10 extended
In the closely sealed each region of each semiconductor chip 31 of semiconductor crystal wafer 30C, deformation is pressed down 12 closely sealed adhesive layers 20
On the other hand system does not generate this deformation inhibiting effect, in the state at the position opposite with the crackle forming position of wafer
The tensile stress generated in lower cutting belt 10 plays a role.As a result, in adhesive layer 20 between semiconductor chip 31
Crackle forming position is cut off at opposite position.
In addition, in the present invention, cutting die bonding film X can be used in obtaining as described above half with adhesive layer
Conductor chip can be also used for obtaining carry adhesive layer half when being laminated multiple semiconductor chips and carrying out the installation of 3 dimensions
Conductor chip.Both can be with adhesive layer 21 together sandwiched spacer between the semiconductor chip 31 of this 3 dimension installation, it can also
Not sandwiched spacer.
Embodiment
(embodiment 1)
The making > of < cutting belts
In the reaction vessel for having condenser pipe, nitrogen ingress pipe, thermometer and agitating device, in nitrogen gas at 60 DEG C
Under atmosphere to comprising 100 molar part of dodecylacrylate, acrylic acid 2- hydroxyethyls ester (2HEA) 20 molar part, relative to this
100 mass parts of a little monomer components are 0.2 mass parts as the benzoyl peroxide of polymerization initiator and as polymer solvent
The mixture of toluene carries out stirring (polymerisation) in 10 hours.It is obtained as a result, containing acrylic polymer P1Polymer it is molten
Liquid.Acrylic polymer P in the polymer solution1Weight average molecular weight (Mw) be 450,000.Then, at room temperature in air
To comprising containing acrylic polymer P under atmosphere1Polymer solution, 2- methacryloxyethyl isocyanates
(MOI) mixture of the dibutyl tin laurate and as addition reaction catalyst carries out stirring (addition reaction) in 48 hours.
In the reaction solution, the compounding amount of MOI is 20 molar parts, acrylic acid relative to 100 molar part of above-mentioned dodecylacrylate
Type of Collective object P1In the MOI compounding amounts relative to being 1 from the unit of 2HEA and/or the molar ratio of the total amount of its hydroxyl.
In addition, in the reaction solution, the compounding amount of dibutyl tin laurate is relative to acrylic polymer P1100 mass parts
For 0.03 mass parts.By the addition reaction, obtain being included in acrylic polymer of the side chain with methacrylate
P2Polymer solution.Then, it adds in the polymer solution relative to acrylic polymer P2100 mass parts are 1 mass
The polyisocyanate compound (trade name " Coronate L ", TOSOH Co., Ltd's system) of part and the photopolymerization of 2 mass parts cause
Agent (trade name " Irgacure 127 ", BASF AG's system) is mixed, also, is with the viscosity of the mixture at room temperature
The mode of 500mPas is diluted mixture addition toluene, obtains binder solution.Later, with having implemented
In the silicone release process face of the PET sliders (38 μm of thickness) in the face of machine silicon demoulding processing, it is coated with and is bonded using applicator
Agent solution, forms film, and 2 minutes heat dryings are carried out at 130 DEG C to the film, 10 μ of formation thickness on PET sliders
The adhesive phase of m.For the thickness of adhesive phase, use amesdial (trade name " C-7HS ", the rugged making of Co., Ltd.'s tail are made)
It is measured.Then, using laminating machine, it is bonded ethylene-vinyl acetate copolymerization at room temperature in the exposed surface of the adhesive phase
The base material (trade name " RB-0104 ", 130 μm of thickness, Kurashiki Boseki K.K.'s system) of object (EVA) system.As above operation makes real
Apply the cutting belt of example 1.
The making > of < adhesive layers
By acrylic resin A1(ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate
Copolymer, weight average molecular weight be 1,200,000, glass transition temperature be 0 DEG C, epoxide number 0.4eq/kg) 100 mass parts, phenolic aldehyde
Resin (trade name " 8210DL ", Gunsaka Chem. Industry Co., Ltd.'s system) 25 mass parts and epoxy resin (trade name " KI-
3000 ", Mitsubishi chemical Co., Ltd's system) 25 mass parts are added in methyl ethyl ketone and are mixed, be with viscosity at room temperature
The mode of 700mPas adjusts concentration, obtains adhesive composite.Then, with the face for implementing silicone release processing
PET sliders (38 μm of thickness) silicone release process face on, use applicator coating adhesive composition, formed apply
Film carries out at 130 DEG C the film 2 minutes heat dryings.As above operation makes the thickness of embodiment 1 on PET sliders
The adhesive layer of 7 μm of degree.For the thickness of adhesive layer, amesdial (trade name " C-7HS ", the rugged making of Co., Ltd.'s tail are used
It is made) it is measured.
< cuts the making > of die bonding film
After above-mentioned cutting belt removes PET sliders, it will be exposed in cutting belt at room temperature using laminating machine
Adhesive phase and with slider above-mentioned adhesive layer fitting, obtain stacking sheet body.Then, to the stacking sheet body, into enforcement
Processing knife enters to the punch press process until reaching slider from the EVA substrate sides of cutting belt.It is formed on slider as a result, straight
The cutting die bonding film of the disc-shape of diameter 370mm.
(embodiment 2)
The thickness of adhesive layer is changed to 10 μm by 7 μm, it is in addition to this, same as the adhesive layer of embodiment 1 to operate,
The adhesive layer of embodiment 2 is made on PET sliders.Also, the adhesive layer for replacing embodiment 1 uses being somebody's turn to do for embodiment 2
Adhesive layer, in addition to this, same as the cutting die bonding film of embodiment 1 to operate, the cutting chip for making embodiment 2 connects
Close film.
(embodiment 3)
The thickness of adhesive layer is changed to 20 μm by 7 μm, it is in addition to this, same as the adhesive layer of embodiment 1 to operate,
The adhesive layer of embodiment 3 is made on PET sliders.Also, the adhesive layer for replacing embodiment 1 uses being somebody's turn to do for embodiment 3
Adhesive layer, in addition to this, same as the cutting die bonding film of embodiment 1 to operate, the cutting chip for making embodiment 3 connects
Close film.
(Comparative Examples 1 and 2)
In the making of adhesive layer, the thickness of adhesive layer is changed to 20 μm (comparative examples 1) or 7 μm of (ratios by 10 μm
Compared with example 2), also, after carrying out punch press process to cutting belt and adhesive layer (die bonding film) respectively in different sizes
The two is bonded, in addition to this, same as the cutting die bonding film of embodiment 1 to operate, each cutting of comparison example 1,2
Die bonding film.In Comparative Examples 1 and 2, cutting belt is respectively with the state punch press process with slider at diameter 370mm, core
Chip bonding film is with the state punch press process with slider at diameter 330mm.While thin with the center of cutting belt and chip engagement
The consistent mode in the center of film carries out position alignment side and is bonded.
(comparative example 3)
In the making of adhesive layer, the thickness of adhesive layer is changed to 5 μm (comparative examples 3) by 10 μm, with different rulers
It is very little that the two is bonded by cutting belt and adhesive layer (die bonding film) progress punch press process later respectively, also, to cutting
Adhesive phase in band irradiates ultraviolet light from substrate side, in addition to this, same as the cutting die bonding film of embodiment 1 to grasp
Make, the cutting die bonding film of comparison example 3.Cutting belt with the state punch press process with slider at diameter 370mm,
Die bonding film is with the state punch press process with slider at diameter 330mm.While being engaged with the center of cutting belt and chip
The consistent mode in the center of film carries out position alignment side and is bonded.In addition, when ultraviolet light irradiates, using high-pressure sodium lamp,
Irradiation accumulated light is set as 350mJ/cm2.As above operation makes with the stepped construction comprising cutting belt and adhesive layer
The cutting die bonding film of comparative example 3.
(tensile stress at -15 DEG C)
For by each cutting die bonding film of Examples 1 to 3 and comparative example 1~3 from outer circumference end until inwardly
The 1st test film that lateral area until the 20mm of side is cut uses cupping machine (trade name " Autograph AGS-J ", strain
Shimadzu Seisakusho Ltd. of formula commercial firm system) tension test is carried out, measure the tensile stress generated in strain value 30%.Each 1st test film
The width of length and 10mm with the 50mm extended along the directions MD in the lateral area of cutting die bonding film.For every
The cutting die bonding film of a Examples 1 to 3 and comparative example 1~3 prepares 5 the 1st test films respectively.In this tension test
In, distance is 20mm between Initial grip, temperature condition is -15 DEG C, tensile speed is 300mm/ minutes.Same cutting will be derived from
1st test film of the average value of the measured value of 5 the 1st test films of die bonding film as the cutting die bonding film
Tensile stress (the 1st tensile stress) at -15 DEG C.The value of the 1st obtained tensile stress is shown in table 1.
For the above-mentioned lateral area that is located at of each cutting die bonding film by Examples 1 to 3 and comparative example 1~3
The 2nd test film that the inside region of inside is cut uses cupping machine (trade name " Autograph AGS-J ", Co., Ltd.
Shimadzu Seisakusho Ltd.'s system) tension test is carried out, measure the tensile stress generated in strain value 30%.Each 2nd test film has
Cut the length of the 50mm extended along the directions MD in the inside region of die bonding film and the width of 10mm.For each implementation
The cutting die bonding film of example 1~3 and comparative example 1~3 prepares 5 the 2nd test films respectively.In this tension test, initially
Distance is 20mm between fixture, temperature condition is -15 DEG C, tensile speed is 300mm/ minutes.It will be connect from same cutting chip
Close film 5 the 2nd test films measured value average value as the cutting die bonding film the 2nd test film at -15 DEG C
Under tensile stress (the 2nd tensile stress).The value of the 2nd obtained tensile stress is shown in table 1.2nd tensile stress is relative to the 1st
The ratio of tensile stress is also depicted in table 1.
(tensile stress at 23 DEG C)
For by each cutting die bonding film of Examples 1 to 3 and comparative example 1~3 from outer circumference end until inwardly
The 1st test film that lateral area until the 20mm of side is cut uses cupping machine (trade name " Autograph AGS-J ", strain
Shimadzu Seisakusho Ltd. of formula commercial firm system) tension test is carried out, measure the tensile stress generated in strain value 30%.Each 1st test film
The width of length and 10mm with the 50mm extended along the directions MD in the lateral area of cutting die bonding film.For every
The cutting die bonding film of a Examples 1 to 3 and comparative example 1~3 prepares 5 the 1st test films respectively.In this tension test
In, distance is 20mm between Initial grip, temperature condition is 23 DEG C, tensile speed is 300mm/ minutes.Same cutting will be derived from
The average value of the measured value of 5 the 1st test films of die bonding film exists as the 1st test film of the cutting die bonding film
Tensile stress (the 3rd tensile stress) at 23 DEG C.The value of the 3rd obtained tensile stress is shown in table 1.
For the above-mentioned lateral area that is located at of each cutting die bonding film by Examples 1 to 3 and comparative example 1~3
The 2nd test film that the inside region of inside is cut uses cupping machine (trade name " Autograph AGS-J ", Co., Ltd.
Shimadzu Seisakusho Ltd.'s system) tension test is carried out, measure the tensile stress generated in strain value 30%.Each 2nd test film has
Cut the length of the 50mm extended along the directions MD in the inside region of die bonding film and the width of 10mm.For each implementation
The cutting die bonding film of example 1~3 and comparative example 1~3 prepares 5 the 2nd test films respectively.In this tension test, initially
Distance is 20mm between fixture, temperature condition is 23 DEG C, tensile speed is 300mm/ minutes.Same cutting chip will be derived to engage
The average value of the measured value of 5 the 2nd test films of film as the cutting die bonding film the 2nd test film at 23 DEG C
Tensile stress (the 4th tensile stress).The value of the 4th obtained tensile stress is shown in table 1.4th tensile stress is stretched relative to the 3rd
The ratio of stress is also depicted in table 1.
The bonding force > of < adhesive layers
For the adhesive layer of each cutting die bonding film of Examples 1 to 3 and comparative example 1~3, following work study
Its 180 at -15 DEG C ° peel adhesion.First, it removes from cutting belt by adhesive layer, is fitted in the adhesive layer
It is bonded facing rubber band (trade name " BT-315 ", Nitto Denko Corp's system) on the face of cutting belt side, is cut by the backing film
It materialses piece (width 10mm × length 100mm).Then, coupons are fitted in into the SUS plates as adherend, by making 2kg
Reciprocal 1 crimping operation of roller so that coupons is crimped with adherend.Later, it places 30 minutes at room temperature, then, uses drawing
Stretch testing machine (trade name " Autograph AGS-J ", Shimadzu Scisakusho Ltd's system) measure adhesive layer coupons for
180 ° of peel adhesions of SUS plates.In this measurement, measuring temperature and/or exfoliation temperature are -15 DEG C, draw angle is 180 °,
Tensile speed is 300mm/ minutes.By the stripping not including the peeling force that 10mm/ minutes initial in tension test show
The average value of power is as 180 ° of peel adhesions (N/10mm).In addition, each cutting for Examples 1 to 3 and comparative example 1~3
Measuring temperature is changed to 23 DEG C by the adhesive layer of die bonding film by -15 DEG C, in addition to this, with 180 ° of strippings at -15 DEG C
Same operation is measured from bonding force, measures 180 ° of peel adhesions at 23 DEG C.Their measurement result is shown in table 1.
(evaluation of cutting off property)
Using Examples 1 to 3 and each cutting die bonding film of comparative example 1~3, bonding process below, use are carried out
In the 1st extension process (cooling extension process) cut off and for the 2nd extension process (room temperature extension process) of separation.
It, will be by wafer processing adhesive tape (trade name " UB-3083D ", Nitto Denko Corp's system) in bonding process
The semiconductor crystal wafer dividing body of holding fits in the adhesive layer of cutting die bonding film, later, divides from semiconductor crystal wafer
Body removes wafer processing adhesive tape.In fitting, using laminating machine, fitting speed is set as 10mm/ seconds, sets temperature condition
It is set as 0.15MPa for 60 DEG C, by pressure condition.In addition, semiconductor crystal wafer dividing body is operated as follows to be formed and be prepared.First,
It is held in wafer processing adhesive tape (trade name " V12S-R2-P ", Nitto Denko Corp for being in together with ring frame
System) state bare silicon wafer (12 inches of diameter, 780 μm of thickness, Tokyo Chemical Co., Ltd system), from one surface side using cut
The slot segmentation that device (trade name " DFD6260 ", DISCO Corporation systems) forms singualtion by its rotating knife is (wide
25 μm of degree, 50 μm of depth, a subregion are the clathrate of 6mm × 12mm).Then, it is used in the fitting wafer processing of slot segmentation forming face
After adhesive tape (trade name " UB-3083D ", Nitto Denko Corp's system), by above-mentioned wafer processing adhesive tape (trade name " V12S-
R2-P ") it is removed from wafer.Then, using back side grinding attachment (trade name " DGP8760 ", DISCO Corporation systems),
By the grinding from the another side of wafer (face for not forming slot segmentation) side, which is thinned to 20 μm of thickness, then, is led to
It crosses the dry type polishing carried out using same device and mirror finishing is implemented to the grinding surface.As above operation forms semiconductor crystal wafer
Dividing body (to be held in the state of wafer processing adhesive tape).Include multiple semiconductor chips in the semiconductor crystal wafer dividing body
(6mm×12mm)。
Cooling extension process uses mold separating device (trade name " Die Separator DDS2300 ", DISCO
Corporation systems), expanding element is cooled down by it to carry out.Specifically, first with semiconductor crystal wafer dividing body
The frame of adhesive layer in above-mentioned cutting die bonding film, which is pasted, uses region (around workpiece stickup region), at room temperature
Attach the SUS ring frames (DISCO Corporation systems) of 12 inches of diameter.Then, which is set
It is placed in device, utilizes cutting die bonding film of the cooling expanding element extension with semiconductor crystal wafer dividing body of the device
Cutting belt.In the cooling extends process, temperature is -15 DEG C, and expansion rate is 100mm/ seconds, propagation 7mm.
Room temperature extends process and uses mold separating device (trade name " Die Separator DDS2300 ", DISCO
Corporation systems), it is carried out using its room temperature expanding element.Specifically, using the room temperature expanding element of the device, expand
Exhibition have passed through the cutting belt of the cutting die bonding film with semiconductor crystal wafer dividing body of above-mentioned cooling extension process.At this
Room temperature extends in process, and temperature is 23 DEG C, and expansion rate is 1mm/ seconds, propagation 10mm.Then, to have passed through room temperature extension
Cutting die bonding film implement heat shrink processing.Its treatment temperature is 200 DEG C, and processing time is 20 seconds.
It studies and experienced using more than the progress of each cutting die bonding film of Examples 1 to 3 and comparative example 1~3
The sum of semiconductor chip with the adhesive layer cut off in the stage of process is relative to institute in semiconductor crystal wafer dividing body
The ratio of the sum of the semiconductor chip contained.Also, for the cutting off property of adhesive layer, the situation for being 80% or more by the ratio
The case where being evaluated as good (zero), which is less than 80% is evaluated as bad (×).It should be evaluation result is shown in table 1.
[evaluation]
In the cutting die bonding film of Examples 1 to 3, the 2nd tensile stress exists relative to the ratio of the 1st tensile stress
In the range of 0.9~1.1.It is opposite with using the 2nd tensile stress using the cutting die bonding film of such Examples 1 to 3
It is compared in the cutting die bonding film of comparative example 1~3 of the ratio not in the range of 0.9~1.1 of the 1st tensile stress, energy
To the singualtion (cutting off) of the semiconductor chip with adhesive layer in enough extension processes carried out better at -15 DEG C.
Table 1
Claims (13)
1. a kind of cutting die bonding film, has:
Cutting belt has the stepped construction comprising base material and adhesive phase;With
Described adhesive layer in adhesive layer, with the cutting belt is strippingly closely sealed,
Under conditions of between following 2nd test films distance 20mm, -15 DEG C and tensile speed 300mm/ minutes Initial grip
The 2nd tensile stress generated in strain value 30% in the tension test of progress relative to following 1st test films initial
In strain value 30% in the tension test that distance 20mm, -15 DEG C and tensile speed carry out under conditions of 300mm/ minutes between fixture
When the ratio of the 1st tensile stress that generates be 0.9~1.1,
1st test film:It is cut by the lateral area from outer circumference end until 20mm inwardly of cutting die bonding film
, the test film of the width of length and 10mm with the 50mm extended in one direction
2nd test film:The inside region of lateral area closer to inside described in ratio by cutting die bonding film is cut, tool
There is the test film of the length of the 50mm extended along one direction and the width of 10mm.
2. cutting die bonding film according to claim 1, wherein the 1st tensile stress and the 2nd stretching are answered
Power is 5~28N.
3. cutting die bonding film according to claim 1, wherein the adhesive layer is in -15 DEG C, peel angle
180 ° and tensile speed show SUS planes in the disbonded test under conditions of 300mm/ minutes 180 ° of 1N/10mm or more
Peel adhesion.
4. cutting die bonding film according to claim 2, wherein the adhesive layer is in -15 DEG C, peel angle
180 ° and tensile speed show SUS planes in the disbonded test under conditions of 300mm/ minutes 180 ° of 1N/10mm or more
Peel adhesion.
5. cutting die bonding film according to claim 1, wherein between the 1st test film distance Initial grip
The 3rd generated in strain value 30% in the tension test that 20mm, 23 DEG C and tensile speed carry out under conditions of 300mm/ minutes
Tensile stress and to the 2nd test film between Initial grip distance 20mm, 23 DEG C and 300mm/ minutes conditions of tensile speed
The 4th tensile stress generated in strain value 30% in the tension test of lower progress is 1~20N.
6. cutting die bonding film according to claim 5, wherein the 4th tensile stress is drawn relative to the described 3rd
The ratio for stretching stress is 0.95~1.05.
7. cutting die bonding film according to claim 2, wherein between the 1st test film distance Initial grip
The 3rd generated in strain value 30% in the tension test that 20mm, 23 DEG C and tensile speed carry out under conditions of 300mm/ minutes
Tensile stress and to the 2nd test film between Initial grip distance 20mm, 23 DEG C and 300mm/ minutes conditions of tensile speed
The 4th tensile stress generated in strain value 30% in the tension test of lower progress is 1~20N.
8. cutting die bonding film according to claim 7, wherein the 4th tensile stress is drawn relative to the described 3rd
The ratio for stretching stress is 0.95~1.05.
9. cutting die bonding film according to claim 1, wherein the adhesive layer is in 23 DEG C, peel angle
180 ° and tensile speed show 0.1N/10mm's or more in the disbonded test under conditions of 300mm/ minutes to SUS planes
180 ° of peel adhesions.
10. cutting die bonding film according to claim 1, thickness is in the inside region and the lateral area
It is identical.
11. according to cutting die bonding film according to any one of claims 1 to 10, has and include the base material, institute
State adhesive phase and the adhesive layer and in the inside region and the continuous stepped construction of the lateral area.
12. according to cutting die bonding film according to any one of claims 1 to 10, wherein outside the adhesive layer
The directions in pellicular front Zhou Duan are located at the distance within 1000 μm of the outer circumference end away from described adhesive layer.
13. cutting die bonding film according to claim 11, wherein the outer circumference end of the adhesive layer is in pellicular front
Interior direction is located at the distance within 1000 μm of the outer circumference end away from described adhesive layer.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-081120 | 2017-04-17 | ||
JP2017081120 | 2017-04-17 | ||
JP2018009339A JP6959874B2 (en) | 2017-04-17 | 2018-01-24 | Dicing die bond film |
JP2018-009339 | 2018-01-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108735650A true CN108735650A (en) | 2018-11-02 |
CN108735650B CN108735650B (en) | 2023-08-04 |
Family
ID=63938951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810343654.2A Active CN108735650B (en) | 2017-04-17 | 2018-04-17 | Dicing die bonding film |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR20180116755A (en) |
CN (1) | CN108735650B (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009044566A1 (en) * | 2007-10-04 | 2009-04-09 | The Furukawa Electric Co., Ltd. | Film for semiconductor wafer processing |
CN102029655A (en) * | 2009-09-28 | 2011-04-27 | 日东电工株式会社 | Film for semiconductor apparatus |
WO2012042869A1 (en) * | 2010-09-30 | 2012-04-05 | 三井化学株式会社 | Expandable film, dicing film, and method for producing semiconductor device |
CN103305144A (en) * | 2012-03-08 | 2013-09-18 | 日东电工株式会社 | Dicing/die bonding film |
CN104946153A (en) * | 2014-03-31 | 2015-09-30 | 日东电工株式会社 | Thermosetting chip bonding film, cutting/chip bonding film and semiconductor making method |
CN104946152A (en) * | 2014-03-31 | 2015-09-30 | 日东电工株式会社 | Cutting film, cutting/chip bonding film and semiconductor making method |
-
2018
- 2018-04-12 KR KR1020180042601A patent/KR20180116755A/en not_active Application Discontinuation
- 2018-04-17 CN CN201810343654.2A patent/CN108735650B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009044566A1 (en) * | 2007-10-04 | 2009-04-09 | The Furukawa Electric Co., Ltd. | Film for semiconductor wafer processing |
CN102029655A (en) * | 2009-09-28 | 2011-04-27 | 日东电工株式会社 | Film for semiconductor apparatus |
WO2012042869A1 (en) * | 2010-09-30 | 2012-04-05 | 三井化学株式会社 | Expandable film, dicing film, and method for producing semiconductor device |
CN103305144A (en) * | 2012-03-08 | 2013-09-18 | 日东电工株式会社 | Dicing/die bonding film |
CN104946153A (en) * | 2014-03-31 | 2015-09-30 | 日东电工株式会社 | Thermosetting chip bonding film, cutting/chip bonding film and semiconductor making method |
CN104946152A (en) * | 2014-03-31 | 2015-09-30 | 日东电工株式会社 | Cutting film, cutting/chip bonding film and semiconductor making method |
Also Published As
Publication number | Publication date |
---|---|
CN108735650B (en) | 2023-08-04 |
KR20180116755A (en) | 2018-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI769242B (en) | Sliced Die Stick Film | |
CN108728003A (en) | Cut die bonding film | |
TWI789409B (en) | Die-bonding film, die-cutting die-bonding film, and semiconductor device manufacturing method | |
CN109216211A (en) | Cutting belt, cutting die bonding film and manufacturing method for semiconductor device | |
CN108727999A (en) | Cut die bonding film | |
TWI814821B (en) | Chip-cut die-bonding film and semiconductor device manufacturing method | |
CN110028917A (en) | Adhering film and adhering film with cutting belt | |
CN109207078A (en) | Cutting belt and cutting die bonding film | |
CN110527443A (en) | Cut die bonding film | |
TW202035605A (en) | Adhesive film, adhesive film with dicing tape and method for manufacturing semiconductor device | |
TWI766005B (en) | Sliced Die Stick Film | |
JP7075326B2 (en) | Dicing die bond film | |
CN108735651A (en) | Cut die bonding film | |
CN108735649A (en) | Cut die bonding film | |
TWI817969B (en) | Cut crystal adhesive film | |
TW202100690A (en) | Dicing and die attach film including a dicing tape and an adhesive layer | |
CN108728000A (en) | Cut die bonding film | |
CN108735650A (en) | Cut die bonding film | |
TW202028392A (en) | Dicing die attachment film capable of securing a sufficient cuff width for cutting points between chips while realizing excellent cutting in an expansion process | |
CN111826097B (en) | Dicing die bonding film | |
JP2019111775A (en) | Dicing tape integral type adhesive sheet | |
JP7176919B2 (en) | Dicing die bond film | |
TW202039612A (en) | Wafer dicing and wafer bonding membrane having a laminated structure including a wafer dicing tape 10 and a wafer bonding membrane 20 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |