CN108666981A - A kind of IGBT current foldback circuits and method - Google Patents

A kind of IGBT current foldback circuits and method Download PDF

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Publication number
CN108666981A
CN108666981A CN201710193706.8A CN201710193706A CN108666981A CN 108666981 A CN108666981 A CN 108666981A CN 201710193706 A CN201710193706 A CN 201710193706A CN 108666981 A CN108666981 A CN 108666981A
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China
Prior art keywords
igbt
measured
miller
grid
grid voltage
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徐大伟
李新昌
朱弘月
程新红
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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Priority to CN201710193706.8A priority Critical patent/CN108666981A/en
Publication of CN108666981A publication Critical patent/CN108666981A/en
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16566Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
    • G01R19/16571Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing AC or DC current with one threshold, e.g. load current, over-current, surge current or fault current

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

A kind of IGBT current foldback circuits of present invention offer and method, including:Detect the Miller land identification module of the Miller platform of IGBT to be measured;The Miller platform grid voltage of IGBT to be measured is acquired, and obtains the Miller platform grid voltage extraction module of overcurrent protection signal;When overcurrent protection signal works, IGBT grid drive modules that IGBT to be measured is closed.The grid voltage for detecting IGBT to be measured extracts the Miller platform grid voltage of IGBT to be measured when detecting Miller platform; and the Miller platform grid voltage based on IGBT to be measured judge IGBT to be measured collector whether overcurrent; if overcurrent, IGBT to be measured is turned off, realizes overcurrent protection.The present invention avoids using high-voltage great-current device; utilize the Miller platform effect of IGBT; and IGBT Miller platform grid current and IGBT collector current existing for particular kind of relationship; Miller platform grid voltage by detecting IGBT is realized indirectly is detected the collector current of IGBT; and then realize overcurrent protection, testing cost is low, occupancy is small, efficient.

Description

A kind of IGBT current foldback circuits and method
Technical field
The present invention relates to power electronics field and power integrated circuit fields, are protected more particularly to a kind of IGBT overcurrents Protection circuit and method.
Background technology
Power semiconductor, by development in more than 40 years, has had considerable since the seventies in last century comes out Development.It is big that IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is integrated with high voltage Current thyristor manufacturing technology and large scale integrated circuit micrometer-nanometer processing technology, show good comprehensive performance, in big work( Rate field shows powerful vitality.Compared with other power electronic devices, IGBT has high reliability, drives simple, guarantor Shield is easy, switching frequency is high, voltage-type driving, driving power is small, saturation pressure reduction, is resistant to the features such as high-voltage large current, Each tradition such as automotive electronics, consumer electronics, rail traffic, power domain, new energy and emerging field have obtained widely Using.
IGBT is operated under the adverse circumstances of high-voltage large current, usually disabling damage due to a variety of causes.Failure damage Bad type includes mainly:Cause thermal damage is crossed, cause locking-up effect beyond shutdown safety operation area and is damaged and overvoltage causes IGBT punctures.Almost all of damage is all excessive related with collector current Ic, therefore in order to ensure whole system steadily, just Often, intelligent operation, it is particularly significant to the monitoring in real time of IGBT electric currents.Currently used IGBT current detection modes mainly have three Kind:
(1) current sensor detects:IGBT collector currents or bus current are detected using current sensor, if Current anomaly occurs, sends out fault-signal, and carry out relevant treatment.The device used is generally hall device or Rogowski coil.
(2) Vce moves back saturation detection:Due to the saturation conduction characteristic of IGBT, when collector current Ic is flowed through from IGBT, Certain pressure drop Vce can be generated in collector-emitter, Vce is directly proportional to Ic, when Ic is excessive, Vce can be caused drastically to increase Add, Vce most can effectively react IGBT electric currents.
(3) shunt resistance detects:One low resistance shunt resistance is series in IGBT current loops, shunt resistance electricity is read IGBT electric currents are monitored when compacting.
Three of the above detection method is required to use high pressure or high-current device, thus current detecting is of high cost, control Body product is big, efficiency is low, solves the above problems and has become one of those skilled in the art's urgent problem to be solved.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of IGBT current foldback circuits and Method, for solving the problems such as current detecting is of high cost in the prior art, controller volume is big, efficiency is low.
In order to achieve the above objects and other related objects, the present invention provides a kind of IGBT current foldback circuits, the IGBT Current foldback circuit includes at least:
IGBT grid drive modules, Miller land identification module and Miller platform grid voltage extraction module;
The Miller land identification module is connected to the grid of IGBT to be measured, and the Miller for detecting the IGBT to be measured is flat Platform, and export Miller detection of platform signal;
The Miller platform grid voltage extraction module is connected to the grid of the IGBT to be measured, and it is flat to be controlled by the Miller The output signal of platform identification module, while it being connected to the input terminal of the IGBT grid drive module, it is described to be measured for acquiring The Miller platform grid voltage of IGBT, and overcurrent protection signal is generated according to the Miller platform grid voltage of the IGBT to be measured;
The IGBT grid drive module is connected to the output end of the Miller platform grid voltage extraction module, when the mistake When flowing protection signal action, the IGBT to be measured is closed by the IGBT grid drive module, realizes overcurrent protection.
Preferably, the IGBT grid drive module includes that pulse signal generates unit and grid driving unit;
The pulse signal generates the input terminal that unit is connected to the grid driving unit, for providing a pulse signal, The pulse signal is pulse width modulating signal;
The grid driving unit connects the pulse signal and generates unit and the Miller platform grid voltage extraction module Output end and the IGBT to be measured grid, for driving the IGBT to be measured.
Preferably, the Miller land identification module includes bandpass filter, first comparator and logical-arithmetic unit;
The input terminal of the bandpass filter connects the grid of the IGBT to be measured, to the grid voltage of the IGBT to be measured It is filtered;
The input terminal of the first comparator is separately connected the output end and the first reference voltage of the bandpass filter, will The output signal of the bandpass filter is compared with first reference voltage;
The input terminal of the logical-arithmetic unit connects the output end of the first comparator and the IGBT grid drive module, The grid drive signal of the comparison result that the first comparator is exported and the IGBT to be measured carries out logical operation, to control Miller platform grid voltage extraction module is stated, to detect the Miller platform of the IGBT to be measured.
It is highly preferred that the Miller land identification module further include be connected to the input terminal of the first comparator with it is described Buffer between bandpass filter;
The input terminal of the buffer connects the output end of the bandpass filter, output end connects the first comparator Input terminal, for the output signal of the bandpass filter into row buffering.
Preferably, the Miller platform grid voltage extraction module includes amplifier, analog switch pipe, capacitance and the second ratio Compared with device;
The input terminal of the amplifier connects the grid of the IGBT to be measured, the grid electricity for amplifying the IGBT to be measured Pressure;
The analog switch pipe is connected between the output end of the amplifier and the top crown of the capacitance, and control terminal connects The output end for connecing the Miller land identification module, the simulation when the Miller land identification module detects Miller platform Switching tube is opened, and when Miller platform is not detected in the Miller land identification module, the analog switch pipe is closed;
The bottom crown of the capacitance is grounded, the Miller platform grid voltage for preserving the IGBT to be measured;
The input terminal of second comparator is separately connected the top crown of the capacitance and second reference voltage, is used for The Miller platform grid voltage of the IGBT is compared with second reference voltage, is believed with obtaining the overcurrent protection Number.
It is highly preferred that the Miller platform grid voltage extraction module further includes the modulus for being connected to the capacitance top crown Converter, for converting the analog signal on the capacitance to digital signal.
In order to achieve the above objects and other related objects, described the present invention also provides a kind of IGBT over-current protection methods IGBT over-current protection methods include at least:
The grid voltage for detecting IGBT to be measured, when detecting the Miller platform of the IGBT to be measured, extraction is described to be measured The Miller platform grid voltage of IGBT, and the Miller platform grid voltage based on the IGBT to be measured judges the IGBT's to be measured Whether overcurrent turns off the IGBT to be measured to collector if the collector overcurrent of the IGBT to be measured, and then realizes that overcurrent is protected Shield.
Preferably, the Miller platform grid voltage of the IGBT to be measured and the collector current of the IGBT to be measured meet such as Lower relational expression:
Wherein, VGATEFor the Miller platform grid voltage of the IGBT to be measured, VDRVIEIt is driven for the grid of the IGBT to be measured The voltage of dynamic signal, VTHFor the threshold voltage of the IGBT to be measured, gmFor in the equivalent circuit of the IGBT to be measured metal-oxide-semiconductor across It leads, the gain of triode, I in the equivalent circuit that α is the IGBT to be measuredCFor the collector current of the IGBT to be measured.
Preferably, the method for detecting the Miller platform of the IGBT to be measured specifically includes:Detect the grid of the IGBT to be measured Pole tension;It will be compared with the first reference voltage after the grid voltage of the IGBT to be measured is filtered and buffering, and export Comparison result;The grid drive signal of the comparison result and the IGBT to be measured carry out logical operation, and then generate Miller platform The control signal of analog switch pipe in grid voltage extraction module.
Preferably, the method for extracting the Miller platform grid voltage of the IGBT to be measured specifically includes:It is described when detecting When the Miller platform of IGBT to be measured, the grid voltage of the IGBT to be measured is extracted;When the rice that the IGBT to be measured is not detected When strangling platform, the grid voltage of the IGBT to be measured is shielded, and the previous Miller that extraction signal remains the IGBT to be measured is flat Platform grid voltage.
As described above, the IGBT current foldback circuits and method of the present invention, have the advantages that:
The IGBT current foldback circuits and method of the present invention avoids using high-voltage great-current device, flat using the Miller of IGBT Particular kind of relationship existing for the collector current of the Miller platform grid current and IGBT of platform effect and IGBT, passes through detection The Miller platform grid voltage of IGBT is realized and is detected to the collector current of IGBT indirectly, and then realizes overcurrent protection, inspection Survey it is at low cost, occupy it is small, efficient.
Description of the drawings
Fig. 1 is shown as IGBT schematic equivalent circuits.
Fig. 2 is shown as a kind of schematic equivalent circuit of test circuit of IGBT.
Fig. 3 is shown as the relation schematic diagram between the Miller platform grid current of IGBT and collector current.
Fig. 4 is shown as the structural schematic diagram of the IGBT current foldback circuits of the present invention.
Fig. 5 is shown as the waveform diagram of the IGBT current foldback circuits of the present invention.
Fig. 6 is shown as the relation schematic diagram of extraction signal and the collector current of IGBT device.
Component label instructions
1 IGBT current foldback circuits
11 IGBT grid drive modules
111 pulse signals generate unit
112 grid driving units
12 Miller land identification modules
121 bandpass filters
122 buffers
123 first comparators
124 logical-arithmetic units
13 Miller platform grid voltage extraction modules
131 amplifiers
132 analog-digital converters
133 second comparators
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Fig. 6.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in schema then Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its Assembly layout kenel may also be increasingly complex.
As shown in Figure 1, IGBT can the simple equivalent PNP triode structure controlled at a NMOS tube;The NMOS tube Drain electrode connect the grid of the PNP triode, source electrode connects the emitter of the PNP triode, and as the IGBT's Emitter;Grid of the grid of the NMOS tube as the IGBT;The collector of the PNP triode is as the IGBT's Collector.
It is illustrated in figure 2 a kind of test circuit of IGBT, the grid of the NMOS tube connects drive signal, the IGBT's Gate drive signal VDRVIEIt is equivalent by a pulse signal, the grid of the NMOS tube, the NMOS tube are loaded by driver Grid and the driver between be also associated with the equivalent gate resistance R of the IGBTG;The emitter of the PNP triode Ground connection, collector pass through one DC voltage V of inductance L connectionsDC, the one diode D, the diode D of both ends parallel connection of the inductance L Anode connect the collector of the PNP triode, the cathode of the diode D connects the DC voltage VDC, the inductance L It can be replaced with other loads or other can be not limited to this embodiment with the device of IGBT composition power circuits.
The Miller platform grid current I of the IGBTGWith collector current ICThere are following relationships:
ID=gm(VGS-VTH) (2)
Wherein, RGFor IGBT grid grade resistance, VGATEFor the Miller platform grid voltage of IGBT, IDFor the electric leakage of equivalent N MOS Stream, gmFor the mutual conductance of equivalent N MOS, VDRVIEFor additional driving voltage, VTHFor IGBT threshold voltages, α is PNP triode gain.
As shown in figure 3, the Miller platform grid current I of the IGBTGWith collector current ICBetween there are positive correlation passes System.Therefore, the detection of IGBT collector currents can be by realizing the Miller platform grid current detection of IGBT, when described indirectly The Miller platform grid current I of IGBTgWhen more than certain value, you can judge the IGBT collectors overcurrent.In view of voltage is examined Survey more more easily, therefore in the present invention using the Miller platform grid voltage V for detecting the IGBTGATETo replace directly detecting institute State the Miller platform grid current I of IGBTG
Therefore, by formula (1) it is found that the Miller platform grid voltage V of the IGBT to be measuredGATEWith the collection of the IGBT to be measured Electrode current ICMeet following relational expression:
As shown in figure 4, the present invention provides a kind of IGBT current foldback circuits 1, the IGBT current foldback circuits 1 at least wrap It includes:
IGBT grid drive module 11, Miller land identification module 12 and Miller platform grid voltage extraction module 13.
As shown in figure 4, in the present embodiment, IGBT to be measured connect the power electricity to form half-bridge structure with another IGBT device Road.
Specifically, including the first IGBT device Q1 and the second IGBT device Q2.The emitter of the first IGBT device Q1 Ground connection, collector connect the emitter of the second IGBT device Q2, and the collector of the second IGBT device Q2 connects direct current Voltage VDC, the first IGBT device Q1 is for being used as IGBT to be measured.Arbitrarily it can connect to be formed with the first IGBT device Q1 The second IGBT device Q2 in the replaceable present invention of the single or multiple devices of power circuit, is not limited to this embodiment.
As shown in figure 4, the IGBT grid drive module 11 is connected to the Miller platform grid voltage extraction module 13 The grid of output end and the first IGBT device Q1, when the overcurrent of the Miller platform grid voltage extraction module 13 output is protected Protect signal VOCWhen action, the IGBT drive module 11 closes the IGBT to be measured, realizes overcurrent protection.
Specifically, the IGBT test modules 11 include that pulse signal generates unit 111 and grid driving unit 112.
More specifically, the pulse signal generates the input terminal that unit 111 is connected to the grid driving unit 112, it is used for One pulse signal V is providedpulse, the pulse signal VpulseFor pulse width modulating signal (PWM).
More specifically, the grid driving unit 112, which is connected to the pulse signal, generates unit 111 and the Miller platform The grid of the output end of grid voltage extraction module 13 and the first IGBT device Q1, for driving the first IGBT devices Part Q1.
As shown in figure 4, the Miller land identification module 12 is connected to the grid of the first IGBT device Q1, for examining The Miller platform of the first IGBT device Q1 is surveyed, and exports Miller detection of platform signal VSW
Specifically, the Miller land identification module 12 includes bandpass filter 121, buffer 122, first comparator 123 and logical-arithmetic unit 124.
More specifically, the input terminal of the bandpass filter 121 connects the grid of the first IGBT device Q1, for pair The grid voltage of the first IGBT device Q1 is filtered.
More specifically, the input terminal of the buffer 122 connects the output end of the bandpass filter 121, output end connects Connect the input terminal of the first comparator 123, for the output signal of the bandpass filter 121 into row buffering.
More specifically, the input terminal of the first comparator 123 is separately connected the buffer 122 and the first reference voltage Vref1, for by the grid voltage of the first IGBT device Q1 it is filtered and buffer after with the first reference voltage Vref1Than Compared with.In the present embodiment, it is defeated to connect the output end of the buffer 123, reverse phase for the normal phase input end of the first comparator 123 Enter end and connects the first reference voltage Vref1, in actual use can will by increase phase inverter come change input signal with it is defeated The polarity for going out signal is realized identical logic, is not limited to this embodiment.
More specifically, the input terminal of the logical-arithmetic unit 124 connects the output end of the first comparator 123 and described The grid of IGBT test modules 11, the comparison result that the first comparator 123 is exported and the first IGBT device Q1 drive Signal carries out logical operation, to detect the Miller platform of the first IGBT device Q1.
As shown in figure 4, the Miller platform grid voltage extraction module 13 is connected to the Miller land identification module 12 Output end and the grid driving unit 1122 input terminal, the Miller platform grid for acquiring the first IGBT device Q1 Voltage, and with the second reference voltage Vref2It is compared, obtains overcurrent protection signal VOC
Specifically, the Miller platform grid voltage extraction module 13 includes amplifier 131, analog switch pipe NM, capacitance C, analog-digital converter 132 and the second comparator 133.
More specifically, the input terminal of the amplifier 131 connects the grid of the first IGBT device Q1, for amplifying State the grid voltage of the first IGBT device Q1.
More specifically, the analog switch pipe NM is connected to the output end of the amplifier 131 and the upper pole of the capacitance C Between plate, control terminal connects the output end of the Miller land identification module 12, when the Miller land identification module 12 detects The analog switch pipe NM is opened when to Miller platform, when Miller platform when institute is not detected in the Miller land identification module 12 Analog switch pipe NM is stated to close.In the present embodiment, the analog switch pipe NM is N-type metal-oxide-semiconductor, when the Miller land identification When module 12 exports high level, the analog switch pipe NM is opened;When the Miller land identification module 12 exports low level, The analog switch pipe NM is closed.In actual use, the analog switch pipe NM may be p-type metal-oxide-semiconductor, be controlled by changing Identical logical relation can be realized in the polarity of signal processed, is not limited to this embodiment.
More specifically, the bottom crown ground connection of the capacitance C, the Miller platform grid for preserving the first IGBT device Q1 Pole tension.
More specifically, the analog-digital converter 132 is connected to the top crown of the capacitance C, being used for will be on the capacitance C Analog signal is converted into digital signal, that is, digitizes the Miller platform grid voltage of the first IGBT device Q1.
More specifically, the input terminal of second comparator 133 is separately connected the top crown and described second of the capacitance C Reference voltage Vref2, it is used for the Miller platform grid voltage of the first IGBT device Q1 and the second reference voltage Vref2 It is compared, to obtain the overcurrent protection signal VOC
As shown in Fig. 4~Fig. 6, the present invention also provides a kind of IGBT over-current protection methods, the IGBT over-current protection methods It includes at least:
The grid voltage for detecting IGBT to be measured, when detecting the Miller platform of the IGBT to be measured, extraction is described to be measured The Miller platform grid voltage of IGBT, and the Miller platform grid voltage based on the IGBT to be measured judges the IGBT's to be measured Whether overcurrent turns off the IGBT to be measured, and then realize overcurrent protection to collector if the collector overcurrent of the IGBT to be measured.
Specifically, as shown in figure 5, the pulse signal VpulseFor high level when, the grid of the first IGBT device Q1 Voltage VgateIt gradually rises, the grid current I of the IGBTgIn the pulse signal VpulseRising edge mutation increase after start Decline, the collector current I of the first IGBT device Q1CA steady state value is stable at after raising.Know by the Miller platform Other module 12 detects the grid voltage of the first IGBT device Q1;And the grid voltage of the first IGBT device Q1 is passed through Filtering and buffering after with the first reference voltage Vref1It is compared, exports comparison result;The comparison result and described first The grid drive signal of IGBT device Q1 carries out logical operation, and then generates the Miller detection of platform signal V of Miller platformSW, at this time The Miller detection of platform signal VSWFor low level.The analog switch pipe NM is closed, extraction signal VplRemain described first The previous Miller platform grid voltage of IGBT device Q1, in Figure 5, startup stage, the extraction signal VplWith described first The grid voltage V of IGBT device Q1gateIt is consistent.
Specifically, as shown in figure 5, the pulse signal VpulseWhen saltus step is low level, the first IGBT device Q1's Grid voltage VgateIt is gradually reduced, the grid current I of the IGBTgIn the pulse signal VpulseFailing edge mutation decline after It begins to ramp up, the collector current I of the first IGBT device Q1CKeep constant value, the Miller detection of platform signal VSWStill For low level.With the grid voltage V of the first IGBT device Q1gateLower into Miller platform, the first IGBT devices The grid current I of part Q1gInto Miller platform, the first IGBT device Q1 is detected by the Miller land identification module 12 Grid voltage;And by the grid voltage of the first IGBT device Q1 it is filtered and buffering after with first reference voltage Vref1It is compared, exports comparison result;The grid drive signal of the comparison result and the first IGBT device Q1 is patrolled Operation is collected, and then generates the Miller detection of platform signal V of Miller platformSW, the Miller detection of platform signal V at this timeSWFor high electricity It is flat.At this point, the analog switch pipe NM is opened, extraction signal VplFor the Miller platform grid of the first IGBT device Q1 at this time Voltage VGATE, by the Miller platform grid voltage V of the first IGBT device Q1GATEWith the second reference voltage Vref2It carries out Compare, as the Miller platform grid voltage V of the first IGBT device Q1GATEMore than the second reference voltage Vref2When, it is described Overcurrent protection signal VOCIt works, and controls the grid driving unit 1122 and turn off the first IGBT device Q1, institute is realized with this State the collector overcurrent protection of the first IGBT device Q1.
More specifically, as shown in fig. 6, the extraction signal VplWith the collector current I of the first IGBT device Q1CJust Correlation can set the second reference voltage V according to the relationship of the tworef2, different described of visual concrete application environment set Second reference voltage Vref2, do not limit one by one herein.
The IGBT current foldback circuits of the present invention are applicable not only to board-level integration circuit application, and it is integrated to be also applied for chip-scale Circuit application.
The IGBT current foldback circuits and method of the present invention avoids using high-voltage great-current device, flat using the Miller of IGBT Particular kind of relationship existing for the collector current of the Miller platform grid current and IGBT of platform effect and IGBT, passes through detection The Miller platform grid voltage of IGBT is realized and is detected to the collector current of IGBT indirectly, and then realizes overcurrent protection, inspection Survey it is at low cost, occupy it is small, efficient.
In conclusion a kind of IGBT current foldback circuits of present invention offer and method, including:Detect the Miller of IGBT to be measured Platform, and export the Miller land identification module of Miller detection of platform signal;The Miller platform grid voltage of IGBT to be measured is acquired, And the Miller platform grid voltage extraction module of overcurrent protection signal is generated according to the Miller platform grid voltage of IGBT to be measured;With And overcurrent protection signal is when working, IGBT grid drive modules that IGBT to be measured is closed.The grid voltage for detecting IGBT to be measured, when When detecting the Miller platform of the IGBT to be measured, the Miller platform grid voltage of the IGBT to be measured is extracted, and based on described The Miller platform grid voltage of IGBT to be measured judge the IGBT to be measured collector whether overcurrent, if the collection of the IGBT to be measured Electrode overcurrent turns off the IGBT to be measured, and then realizes overcurrent protection.The IGBT current foldback circuits and method of the present invention avoids Using high-voltage great-current device, the Miller platform effect of IGBT and the Miller platform grid current of IGBT and IGBT are utilized Particular kind of relationship existing for collector current, the Miller platform grid voltage by detecting IGBT realize the collector to IGBT indirectly Electric current is detected, and then realizes overcurrent protection, and testing cost is low, occupancy is small, efficient.So effective gram of the present invention It has taken various shortcoming in the prior art and has had high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as At all equivalent modifications or change, should by the present invention claim be covered.

Claims (10)

1. a kind of IGBT current foldback circuits, which is characterized in that the IGBT current foldback circuits include at least:
IGBT grid drive modules, Miller land identification module and Miller platform grid voltage extraction module;
The Miller land identification module is connected to the grid of IGBT to be measured, the Miller platform for detecting the IGBT to be measured, And export Miller detection of platform signal;
The Miller platform grid voltage extraction module is connected to the grid of the IGBT to be measured, is controlled by the Miller platform and knows The output signal of other module, while it being connected to the input terminal of the IGBT grid drive module, for acquiring the IGBT's to be measured Miller platform grid voltage, and overcurrent protection signal is generated according to the Miller platform grid voltage of the IGBT to be measured;
The IGBT grid drive module is connected to the output end of the Miller platform grid voltage extraction module, when the overcurrent is protected When protecting signal action, the IGBT to be measured is closed by the IGBT grid drive module, realizes overcurrent protection.
2. IGBT current foldback circuits according to claim 1, it is characterised in that:The IGBT grid drive module includes arteries and veins Rush signal generation unit and grid driving unit;
The pulse signal generates the input terminal that unit is connected to the grid driving unit, described for providing a pulse signal Pulse signal is pulse width modulating signal;
The grid driving unit connects the pulse signal and generates the defeated of unit and the Miller platform grid voltage extraction module The grid of outlet and the IGBT to be measured, for driving the IGBT to be measured.
3. IGBT current foldback circuits according to claim 1, it is characterised in that:The Miller land identification module includes Bandpass filter, first comparator and logical-arithmetic unit;
The input terminal of the bandpass filter connects the grid of the IGBT to be measured, is carried out to the grid voltage of the IGBT to be measured It is filtered;
The input terminal of the first comparator is separately connected the output end and the first reference voltage of the bandpass filter, will be described The output signal of bandpass filter is compared with first reference voltage;
The input terminal of the logical-arithmetic unit connects the output end of the first comparator and the IGBT grid drive module, by institute The grid drive signal of the comparison result and the IGBT to be measured of stating first comparator output carries out logical operation, to control the rice Platform grid voltage extraction module is strangled, to detect the Miller platform of the IGBT to be measured.
4. IGBT current foldback circuits according to claim 3, it is characterised in that:The Miller land identification module is also wrapped Include the buffer between the input terminal for being connected to the first comparator and the bandpass filter;
The input terminal of the buffer connects the output end of the bandpass filter, output end connects the defeated of the first comparator Enter end, for the output signal of the bandpass filter into row buffering.
5. IGBT current foldback circuits according to claim 1, it is characterised in that:The Miller platform grid voltage extraction Module includes amplifier, analog switch pipe, capacitance and the second comparator;
The input terminal of the amplifier connects the grid of the IGBT to be measured, the grid voltage for amplifying the IGBT to be measured;
The analog switch pipe is connected between the output end of the amplifier and the top crown of the capacitance, and control terminal connects institute The output end for stating Miller land identification module, the analog switch when the Miller land identification module detects Miller platform Pipe is opened, and when Miller platform is not detected in the Miller land identification module, the analog switch pipe is closed;
The bottom crown of the capacitance is grounded, the Miller platform grid voltage for preserving the IGBT to be measured;
The input terminal of second comparator is separately connected the top crown of the capacitance and second reference voltage, is used for institute The Miller platform grid voltage for stating IGBT is compared with second reference voltage, to obtain the overcurrent protection signal.
6. IGBT current foldback circuits according to claim 5, it is characterised in that:The Miller platform grid voltage extraction Module further includes being connected to the analog-digital converter of the capacitance top crown, for converting the analog signal on the capacitance to number Word signal.
7. a kind of IGBT over-current protection methods, which is characterized in that the IGBT over-current protection methods include at least:
The grid voltage for detecting IGBT to be measured extracts the IGBT to be measured when detecting the Miller platform of the IGBT to be measured Miller platform grid voltage, and judge based on the Miller platform grid voltage of the IGBT to be measured the current collection of the IGBT to be measured Whether overcurrent turns off the IGBT to be measured, and then realize overcurrent protection if the collector overcurrent of the IGBT to be measured for pole.
8. IGBT over-current protection methods according to claim 7, it is characterised in that:The Miller platform grid of the IGBT to be measured The collector current of pole tension and the IGBT to be measured meets following relational expression:
Wherein, VGATEFor the Miller platform grid voltage of the IGBT to be measured, VDRVIEBelieve for the gate driving of the IGBT to be measured Number voltage, VTHFor the threshold voltage of the IGBT to be measured, gmFor the mutual conductance of metal-oxide-semiconductor in the equivalent circuit of the IGBT to be measured, α For the gain of triode in the equivalent circuit of the IGBT to be measured, ICFor the collector current of the IGBT to be measured.
9. IGBT over-current protection methods according to claim 7, it is characterised in that:The Miller for detecting the IGBT to be measured is flat The method of platform specifically includes:Detect the grid voltage of the IGBT to be measured;The grid voltage of the IGBT to be measured is filtered It is compared with the first reference voltage with after buffering, and exports comparison result;The grid of the comparison result and the IGBT to be measured Drive signal carries out logical operation, and then generates the control signal of analog switch pipe in Miller platform grid voltage extraction module.
10. IGBT over-current protection methods according to claim 7, it is characterised in that:Extract the Miller of the IGBT to be measured The method of platform grid voltage specifically includes:When detecting the Miller platform of the IGBT to be measured, the grid of the IGBT to be measured Pole tension is extracted;When the Miller platform of the IGBT to be measured is not detected, the grid voltage of the IGBT to be measured is shielded, Extraction signal remains the previous Miller platform grid voltage of the IGBT to be measured.
CN201710193706.8A 2017-03-28 2017-03-28 A kind of IGBT current foldback circuits and method Pending CN108666981A (en)

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